CN110896024B - Silicon carbide epitaxial gallium oxide film method and silicon carbide epitaxial gallium oxide film structure - Google Patents
Silicon carbide epitaxial gallium oxide film method and silicon carbide epitaxial gallium oxide film structure Download PDFInfo
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Abstract
The invention discloses a method for epitaxial gallium oxide film of silicon carbide, which comprises the following steps: selecting a silicon carbide substrate layer; preparation of (Al on the surface of the silicon carbide substrate layer x Ga 1‑x ) 2 O 3 A buffer layer; after the (Al) x Ga 1‑x ) 2 O 3 Preparation of Ga on the buffer layer surface 2 O 3 A thin film layer. The preparation method of the silicon carbide epitaxial gallium oxide film provided by the invention comprises the steps of firstly forming (Al) on the surface of a silicon carbide substrate layer x Ga 1‑x ) 2 O 3 Buffer layer, thereby reducing dislocation defects due to lattice mismatch, and then is formed between (Al x Ga 1‑x ) 2 O 3 Forming Ga on the surface of a buffer layer 2 O 3 Thin film layer to enhance subsequent growth of Ga 2 O 3 Crystallinity of the thin film layer, ultimately achieving the preparation of highly crystalline Ga on silicon carbide substrate layers 2 O 3 The structure of the film material.
Description
Technical Field
The invention belongs to the technical field of microelectronics, and particularly relates to a silicon carbide epitaxial gallium oxide film method and a silicon carbide epitaxial gallium oxide film structure.
Background
In recent years, ga as a third generation semiconductor 2 O 3 The material has larger forbidden bandwidth, higher breakdown electric field strength and smaller on-resistance, is widely focused by people, and is the optimal material choice for developing the power device. Ga can be prepared by a high temperature method at present 2 O 3 And on which homoepitaxy of Ga with excellent optical and electrical properties can be carried out 2 O 3 The film can be used as a power electronic device, an ultraviolet photoelectric detector and an ultraviolet sensor with high performance, and has wide application prospect, however, the application of the power electronic device at high temperature is limited due to the low heat conductivity.
SiC as a third generation semiconductor material also has excellent properties and has a high heatConductivity, siC and Ga 2 O 3 Not only can exert the respective advantages, but also can solve the problem of low thermal conductivity of gallium oxide, however, siC and Ga 2 O 3 The existence of many defects due to the large lattice mismatch limits its wide range of applications.
Thus, solving SiC and Ga 2 O 3 Defect problem caused by lattice mismatch, growing gallium oxide film with high crystallization quality on silicon carbide substrate, and growing silicon carbide film with high crystallization quality on silicon carbide substrate 2 O 3 The combination of materials has great significance in the application of the power electronic device in the high-temperature environment.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a silicon carbide epitaxial gallium oxide film method and a silicon carbide epitaxial gallium oxide film structure. The technical problems to be solved by the invention are realized by the following technical scheme:
a method for preparing a silicon carbide epitaxial gallium oxide film, comprising the following steps:
selecting a silicon carbide substrate layer;
preparation of (Al on the surface of the silicon carbide substrate layer x Ga 1-x ) 2 O 3 A buffer layer;
after the (Al) x Ga 1-x ) 2 O 3 Preparation of Ga on the buffer layer surface 2 O 3 A thin film layer.
In one embodiment of the present invention, the (Al x Ga 1-x ) 2 O 3 The value range of x in the buffer layer is 0.18-0.46.
In one embodiment of the present invention, a silicon carbide substrate layer is formed on the surface of the silicon carbide substrate layer (Al x Ga 1-x ) 2 O 3 A buffer layer, comprising:
sputtering Ga on the surface of the silicon carbide substrate layer by utilizing a magnetron sputtering process 2 O 3 Target material and Al 2 O 3 Target generation (Al) x Ga 1-x ) 2 O 3 ；
For the silicon carbide substrate layer and the silicon carbide substrateOn the surface of the layer (Al x Ga 1-x ) 2 O 3 Annealing to form the (Al) x Ga 1-x ) 2 O 3 And a buffer layer.
In one embodiment of the invention, the sputtering gas of the magnetron sputtering process comprises oxygen and argon.
In one embodiment of the invention, ga is sputtered on the surface of the silicon carbide substrate layer using a magnetron sputtering process 2 O 3 Target material and Al 2 O 3 Target generation (Al) x Ga 1-x ) 2 O 3 Comprising:
at a vacuum degree of 4X 10 -4 ～6×10 -4 Sputtering Ga on the surface of the silicon carbide substrate layer by utilizing a magnetron sputtering process under the condition of Pa 2 O 3 Target material and Al 2 O 3 Target generation (Al) x Ga 1-x ) 2 O 3 Wherein the Ga is sputtered 2 O 3 Sputtering power of the target material is 60W, and sputtering the Al 2 O 3 The sputtering power of the target is 70W-100W.
In one embodiment of the present invention, the silicon carbide substrate layer and the surface of the silicon carbide substrate layer (Al x Ga 1-x ) 2 O 3 Annealing to form the (Al) x Ga 1-x ) 2 O 3 A buffer layer, comprising:
sequentially subjecting the silicon carbide substrate layer and the surface of the silicon carbide substrate layer to a process comprising the steps of (Al x Ga 1-x ) 2 O 3 Annealing to form the (Al) x Ga 1-x ) 2 O 3 And a buffer layer.
In one embodiment of the present invention, the composition is formed after the (Al x Ga 1-x ) 2 O 3 Ga generation on buffer layer surface 2 O 3 A film layer comprising:
using a magnetron sputtering process at the (Al x Ga 1-x ) 2 O 3 Sputtering Ga on the surface of a buffer layer 2 O 3 Target materialInto Ga 2 O 3 A thin film layer.
In one embodiment of the present invention, the (Al x Ga 1-x ) 2 O 3 Sputtering Ga on the surface of a buffer layer 2 O 3 Target material generation Ga 2 O 3 A film layer comprising:
at a vacuum degree of 4.8X10 -4 ～7×10 -4 Under the condition of Pa, the sputtering process was performed under the conditions of Pa (Al x Ga 1-x ) 2 O 3 Sputtering Ga on the surface of a buffer layer 2 O 3 Target material generation Ga 2 O 3 And the film layer, wherein the base distance of the sputtering target is 5cm, and the working current is 2A.
In one embodiment of the present invention, the silicon carbide substrate layer has a thickness of 300 to 700 μm, the (Al x Ga 1-x ) 2 O 3 The thickness of the buffer layer is 100+ -5 nm, the Ga 2 O 3 The thickness of the thin film layer was 300.+ -.5 nm.
An embodiment of the present invention further provides a silicon carbide epitaxial gallium oxide film structure, which is prepared by using the method for preparing a silicon carbide epitaxial gallium oxide film according to any one of the above embodiments, wherein the silicon carbide epitaxial gallium oxide film structure includes:
a silicon carbide substrate layer;
(Al x Ga 1-x ) 2 O 3 the buffer layer is positioned on the surface of the silicon carbide substrate layer;
Ga 2 O 3 a thin film layer located on the (Al x Ga 1-x ) 2 O 3 Above the surface of the buffer layer.
The invention has the beneficial effects that:
the preparation method of the silicon carbide epitaxial gallium oxide film provided by the invention comprises the steps of firstly forming (Al) on the surface of a silicon carbide substrate layer x Ga 1-x ) 2 O 3 Buffer layer, thereby reducing dislocation defects due to lattice mismatch, and then is formed between (Al x Ga 1-x ) 2 O 3 Buffer layer tableFace formation Ga 2 O 3 Thin film layer to enhance subsequent growth of Ga 2 O 3 Crystallinity of the thin film layer, ultimately achieving the preparation of highly crystalline Ga on silicon carbide substrate layers 2 O 3 The structure of the film material.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Drawings
Fig. 1 is a schematic structural diagram of an apparatus for preparing a silicon carbide epitaxial gallium oxide film according to an embodiment of the present invention;
FIG. 2 is a schematic flow chart of a method for preparing an epitaxial gallium oxide film of silicon carbide according to an embodiment of the invention;
FIGS. 3 a-3 c are schematic diagrams of a method for preparing an epitaxial gallium oxide film of silicon carbide according to an embodiment of the present invention;
FIG. 4 shows a view of a metal alloy (Al) x Ga 1-x ) 2 O 3 Schematic annealing environment of the buffer layer;
fig. 5 is a schematic diagram of a silicon carbide epitaxial gallium oxide film structure according to an embodiment of the invention.
Reference numerals illustrate:
a silicon carbide substrate layer-1; (Al) x Ga 1-x ) 2 O 3 Buffer layer-2; ga 2 O 3 Film layer-3; a radio frequency power supply-4; target container-5; a target baffle-6; an air inlet-7; an air extraction pipeline-8; a substrate baffle-9; a tray-10; a substrate heating plate-11; a rotary machine-12; sputtering chamber-13.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but embodiments of the present invention are not limited thereto.
Example 1
Before describing the method for preparing the silicon carbide epitaxial gallium oxide film provided by the embodiment, the embodiment firstly provides a device for preparing the silicon carbide epitaxial gallium oxide film, please refer to fig. 1, fig. 1 is a schematic structural diagram of the device for preparing the silicon carbide epitaxial gallium oxide film provided by the embodiment of the invention, and the device comprises a radio frequency power supply 4, two target containers 5, two target baffles 6, an air inlet 7, an air suction pipeline 8, a substrate baffle 9, a tray 10, a substrate heating disc 11, a rotating machine 12 and a sputtering chamber 13. A radio frequency power supply 4 is connected to the target container 5 through the sputtering chamber 13 for supplying power to the sputtering target. The target container 5 is used for placing sputtering targets, and two target baffles 6 are respectively arranged above the two target containers 5. The gas inlet 7 can be provided with a plurality of gas pipes, into which different gases are respectively introduced, and in this embodiment, the gas inlet 7 can simultaneously introduce sputtering gases, oxygen and argon. The evacuation line 8 is connected to a vacuum system for evacuating the sputtering chamber 13. The lower end of the rotating machine 12 is sequentially connected with the substrate heating plate 11 and the tray 10, so that the substrate heating plate 11 and the tray 10 can rotate simultaneously, and uniformity of film deposition on the surface of the substrate in the sputtering process is ensured.
The method for preparing the silicon carbide epitaxial gallium oxide film provided by the embodiment of the invention can be prepared based on the equipment, and can also be prepared based on other equipment, and the embodiment is not particularly limited.
In order to better describe the method for preparing the silicon carbide epitaxial gallium oxide film provided by the embodiment, the method for preparing the silicon carbide epitaxial gallium oxide film is described on the basis of the equipment for preparing the silicon carbide epitaxial gallium oxide film, please refer to fig. 2, fig. 2 is a schematic flow chart of the method for preparing the silicon carbide epitaxial gallium oxide film provided by the embodiment of the invention, and the method for preparing the silicon carbide epitaxial gallium oxide film specifically comprises the following steps:
s1, referring to FIG. 3a, selecting a silicon carbide substrate layer 1;
specifically, the production technology of the silicon carbide substrate layer is mature, and the quality of the prepared device is good; in addition, the silicon carbide has higher heat conductivity and good stability, and can be applied to the high-temperature growth process; finally, silicon carbide has excellent physicochemical properties, and the combination with gallium oxide enables high-power electronic devices with high performance. Therefore, the substrate layer of this embodiment is made of silicon carbide.
Further, the thickness of the silicon carbide substrate layer is 300 to 700 μm, and preferably, the thickness of the silicon carbide substrate layer is 500 μm.
S2, please refer to FIG. 3b, a layer of silicon carbide is prepared on the surface of the substrate layer 1 (Al x Ga 1-x ) 2 O 3 A buffer layer 2;
s21, sputtering Ga on the surface of the silicon carbide substrate layer by utilizing a magnetron sputtering process 2 O 3 Target material and Al 2 O 3 Target generation (Al) x Ga 1-x ) 2 O 3 The magnetron sputtering technology utilizes the interaction of a magnetic field and an electric field to enable electrons to spirally run near the surface of a target, so that the probability that the electrons strike argon to generate ions is increased, and the generated ions strike the target surface under the action of the electric field to sputter the target. Since the radius of Al atoms is smaller than that of Ga atoms, al is doped to Ga 2 O 3 Is formed (Al) x Ga 1-x ) 2 O 3 The lattice constant is reduced, and when x is proper, (Al) x Ga 1-x ) 2 O 3 With SiC and (Al x Ga 1-x ) 2 O 3 With Ga 2 O 3 The lattice constant mismatch between them is smaller, so that the defect density caused by dislocation can be reduced.
Specifically, firstly, oxygen and argon are used as sputtering gases and are simultaneously introduced into a sputtering cavity; then sputtering Ga on the surface of the silicon carbide substrate layer simultaneously by utilizing a magnetron sputtering process 2 O 3 Target material and Al 2 O 3 A target material formed on the surface of the silicon carbide substrate layer (Al x Ga 1-x ) 2 O 3 。
Preferably, (Al x Ga 1-x ) 2 O 3 The value range of x in the range is 0.18-0.46. When the value of x is in the range of 0.18 to 0.46, it is ensured that (Al x Ga 1-x ) 2 O 3 With SiC and (Al x Ga 1-x ) 2 O 3 With Ga 2 O 3 The lattice constant mismatch between them is smaller, so that the defect density caused by dislocation can be reduced. If the value of X is too small, the lattice constant cannot be reduced, but if the value of X is too large, the lattice constant cannot be reducedThe alloy compound has limited saturation, so phase transition occurs, and the effect of reducing lattice constant and dislocation cannot be achieved.
Further, the mass percentage purity of the oxygen and the argon is 99.999%, and the flow rate of the oxygen can be 2cm 3 A/sec; the flow rate of argon gas can be 20cm 3 Per second, at the same time Ga 2 O 3 Target material and Al 2 O 3 The mass ratio purity of the target material is more than 99.99 percent.
In addition, this example produced (Al x Ga 1-x ) 2 O 3 The conditions of the magnetron sputtering process provided in the buffer layer include: substrate temperature (i.e. substrate layer heating temperature), vacuum degree, ga 2 O 3 Sputtering power of target, al 2 O 3 Sputtering power of the target, sputtering target base distance and sputtering time. Wherein, the sputtering target material base distance refers to the distance between the sputtering target material and the silicon carbide substrate layer. The substrate temperature was room temperature. This example shows the preparation of (Al x Ga 1-x ) 2 O 3 The magnetron sputtering process conditions in the buffer layer are preferably as follows: the substrate temperature was 25 ℃; vacuum degree of 4.8X10 -4 ～7×10 -4 Pa, preferably 5.0X10 -4 Pa；Ga 2 O 3 The sputtering power of the target is 60W; al (Al) 2 O 3 The sputtering power of the target is 70W-100W; the base distance of the sputtering target material is 5cm; the sputtering time period was 1 hour. In the present embodiment, since a crystal having a suitable lattice constant (Al x Ga 1-x ) 2 O 3 Can have similar lattice constant with the SiC substrate, the range of x determines the change of the lattice constant, the experimental growth condition determines the value range of x, and a large number of experiments prove that the proper lattice constant (Al x Ga 1-x ) 2 O 3 That is, the value of x can be set to be in the range of 0.18 to 0.46 only under the above conditions.
The embodiment is realized by setting different Al 2 O 3 The sputtering power of the target material can obtain (Al with different Al components x Ga 1-x ) 2 O 3 A material. When Al is 2 O 3 When the sputtering power of the target is adjusted to 70W-100W, the resultant (Al x Ga 1-x ) 2 O 3 The value of x in the material ranges from 0.18 to 0.46. For example, when Al 2 O 3 When the sputtering power of the target is 75W, x=0.21; when Al is 2 O 3 When the sputtering power of the target is 80W, x=0.27; when Al is 2 O 3 When the target sputtering power is 90W, x=0.31.
Preferably, (Al x Ga 1-x ) 2 O 3 The thickness of the buffer layer was 100.+ -.5 nm. (Al) x Ga 1-x ) 2 O 3 If the thickness of the buffer layer is too small, ga is adversely affected by the larger crystal grains 2 O 3 Growth of the thin film layer, while if too thick, it affects SiC/Ga 2 O 3 Performance of heterojunction devices.
S22, the surface of the silicon carbide substrate layer (Al x Ga 1-x ) 2 O 3 Annealing to form (Al) x Ga 1-x ) 2 O 3 And a buffer layer.
Specifically, referring to fig. 4, the silicon carbide substrate layer and the surface of the silicon carbide substrate layer are sequentially subjected to a process of treating (Al x Ga 1-x ) 2 O 3 Annealing treatment is performed to make (Al x Ga 1-x ) 2 O 3 Becomes (Al) x Ga 1-x ) 2 O 3 Buffer layer, prepared (Al x Ga 1-x ) 2 O 3 The buffer layer has the structural characteristics of amorphous and nanocrystalline. First annealing under oxygen is mainly to reduce (Al x Ga 1-x ) 2 O 3 The concentration of oxygen vacancies in the buffer layer, then annealed in vacuum is primarily to increase (Al x Ga 1-x ) 2 O 3 The crystallization quality of the buffer layer is finally improved by annealing in nitrogen mainly to improve (Al x Ga 1-x ) 2 O 3 The conductive properties of the buffer layer.
Further, the annealing treatment temperature in this embodiment is 600±5 ℃, preferably 600 ℃, the annealing time in oxygen is 2 hours, the annealing time in vacuum is 1 hour, the annealing time in nitrogen is 2 hours, and when the annealing time is shorter, the film cannot fully react, which is unfavorable for recrystallization; longer times can cause greater stress within the film, resulting in film breakage, and therefore require suitable annealing times.
S3, please see 3c, in (Al x Ga 1-x ) 2 O 3 Ga generation on buffer layer 2 surface 2 O 3 A film layer 3;
specifically, the sputtering process is performed using a magnetron sputtering process in (Al x Ga 1-x ) 2 O 3 Sputtering Ga on the surface of a buffer layer 2 O 3 Target material generation Ga 2 O 3 A thin film layer.
Further, argon is firstly introduced into the sputtering chamber as sputtering gas, wherein the mass percent purity of the argon is 99.999%, and the flow rate of the argon can be 20cm, for example 3 A/sec; then using magnetron sputtering process to produce the metal oxide film on the surface of the (Al x Ga 1-x ) 2 O 3 Sputtering Ga on the surface of a buffer layer 2 O 3 Target material generation Ga 2 O 3 A thin film layer.
Preferably, ga 2 O 3 The mass ratio purity of the target material is more than 99.99 percent.
In addition, this example prepares Ga 2 O 3 The conditions of the magnetron sputtering process provided in the thin film layer include: vacuum degree, sputtering target base distance and working current. This example shows the preparation of Ga 2 O 3 The magnetron sputtering process conditions during the film layer are as follows: vacuum degree of 4.8X10 -4 ～7×10 -4 Pa, preferably 5.0X10 -4 Pa, the base distance of the sputtering target is 5cm, the working current is 2A, and if the vacuum degree is low, more impurity gas in the chamber can pollute the prepared Ga 2 O 3 When the vacuum degree is high, the time required for the film layer is increased, which is unfavorable for the experiment.
Preferably, ga 2 O 3 The thickness of the thin film layer was 300.+ -.5 nm. Ga 2 O 3 Too thick a film thickness will result in SiC/Ga 2 O 3 The performance of the heterojunction device is affected.
The method for preparing the silicon carbide epitaxial gallium oxide film provided by the embodiment of the invention is to prepare a silicon carbide substrate layer with a material (Al) x Ga 1-x ) 2 O 3 After annealing treatment in oxygen, vacuum and nitrogen environment, the buffer layer can reduce defects caused by lattice mismatch between the buffer layer and the silicon carbide substrate layer, thereby being more beneficial to subsequent preparation of high-crystallization-quality Ga at proper temperature 2 O 3 A thin film layer.
Example two
Referring to fig. 5, fig. 5 is a schematic diagram of a silicon carbide epitaxial gallium oxide film structure according to an embodiment of the invention. The embodiment of the invention provides a silicon carbide epitaxial gallium oxide film structure, which comprises the following components: silicon carbide substrate layer 1, (Al) x Ga 1-x ) 2 O 3 Buffer layer 2 and Ga 2 O 3 Film layer 3, wherein (Al x Ga 1-x ) 2 O 3 The buffer layer 2 is arranged on the surface of the silicon carbide substrate layer 1, ga 2 O 3 The thin film layer 3 is located at (Al x Ga 1-x ) 2 O 3 Above the surface of the buffer layer 2.
The silicon carbide epitaxial gallium oxide film structure of the embodiment is prepared by using the silicon carbide epitaxial gallium oxide film method provided by the embodiment, and the implementation principle and the technical effect are similar, and are not repeated here
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Further, one skilled in the art can engage and combine the different embodiments or examples described in this specification.
The foregoing is a further detailed description of the invention in connection with the preferred embodiments, and it is not intended that the invention be limited to the specific embodiments described. It will be apparent to those skilled in the art that several simple deductions or substitutions may be made without departing from the spirit of the invention, and these should be considered to be within the scope of the invention.
Claims (5)
1. A method for preparing a silicon carbide epitaxial gallium oxide film, which is characterized by comprising the following steps:
selecting a silicon carbide substrate layer;
at a vacuum degree of 4X 10 -4 ～6×10 -4 Sputtering Ga on the surface of the silicon carbide substrate layer by utilizing a magnetron sputtering process under the condition of Pa 2 O 3 Target material and Al 2 O 3 Target generation (Al) x Ga 1-x ) 2 O 3 Wherein the Ga is sputtered 2 O 3 Sputtering power of the target material is 60W, and sputtering the Al 2 O 3 The sputtering power of the target is 70W-100W;
sequentially subjecting the silicon carbide substrate layer and the surface of the silicon carbide substrate layer to a process comprising the steps of (Al x Ga 1-x ) 2 O 3 Annealing placeIs processed to produce the (Al) x Ga 1-x ) 2 O 3 A buffer layer;
after the (Al) x Ga 1-x ) 2 O 3 Preparation of Ga on the buffer layer surface 2 O 3 A thin film layer;
said (Al) x Ga 1-x ) 2 O 3 The value range of x in the buffer layer is 0.18-0.31;
the silicon carbide substrate layer has a thickness of 300 to 700 μm, and the (Al x Ga 1-x ) 2 O 3 The thickness of the buffer layer is 100+ -5 nm, the Ga 2 O 3 The thickness of the thin film layer was 300.+ -.5 nm.
2. The method of claim 1, wherein the sputtering gas of the magnetron sputtering process comprises oxygen and argon.
3. The method of claim 1, wherein the silicon carbide epitaxial gallium oxide film is formed on the substrate (Al x Ga 1-x ) 2 O 3 Ga generation on buffer layer surface 2 O 3 A film layer comprising:
using a magnetron sputtering process at the (Al x Ga 1-x ) 2 O 3 Sputtering Ga on the surface of a buffer layer 2 O 3 Target material generation Ga 2 O 3 A thin film layer.
4. A method of epitaxial gallium oxide thin film of silicon carbide according to claim 3, wherein the (Al x Ga 1-x ) 2 O 3 Sputtering Ga on the surface of a buffer layer 2 O 3 Target material generation Ga 2 O 3 A film layer comprising:
at a vacuum degree of 4.8X10 -4 ～7×10 -4 Under the condition of Pa, the sputtering process was performed under the conditions of Pa (Al x Ga 1-x ) 2 O 3 Sputtering Ga on the surface of a buffer layer 2 O 3 Target material generation Ga 2 O 3 And the film layer, wherein the base distance of the sputtering target is 5cm, and the working current is 2A.
5. A silicon carbide epitaxial gallium oxide film structure, characterized in that the silicon carbide epitaxial gallium oxide film structure is prepared by the method of any one of claims 1 to 4, wherein the silicon carbide epitaxial gallium oxide film structure comprises:
a silicon carbide substrate layer;
(Al x Ga 1-x ) 2 O 3 the buffer layer is positioned on the surface of the silicon carbide substrate layer;
Ga 2 O 3 a thin film layer located on the (Al x Ga 1-x ) 2 O 3 Above the surface of the buffer layer.
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