CN110993504A - Ga based on SiC substrate2O3Preparation method of film and Ga based on SiC substrate2O3Film(s) - Google Patents
Ga based on SiC substrate2O3Preparation method of film and Ga based on SiC substrate2O3Film(s) Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 84
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims abstract description 64
- 239000010408 film Substances 0.000 claims abstract description 43
- 239000010409 thin film Substances 0.000 claims abstract description 31
- 239000000463 material Substances 0.000 claims abstract description 25
- 238000004549 pulsed laser deposition Methods 0.000 claims abstract description 24
- 238000002360 preparation method Methods 0.000 claims abstract description 23
- 238000005137 deposition process Methods 0.000 claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- 238000000137 annealing Methods 0.000 claims description 35
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 18
- 239000001301 oxygen Substances 0.000 claims description 18
- 229910052760 oxygen Inorganic materials 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 14
- 238000004544 sputter deposition Methods 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000002019 doping agent Substances 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 5
- 238000000151 deposition Methods 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 67
- 229910010271 silicon carbide Inorganic materials 0.000 description 67
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 7
- 229910001195 gallium oxide Inorganic materials 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 239000013077 target material Substances 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 229910003465 moissanite Inorganic materials 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- -1 however Chemical compound 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
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Abstract
The invention discloses Ga based on a SiC substrate2O3A method of making a film comprising: selecting a SiC substrate layer; preparing Ga on the surface of the SiC substrate layer by using a pulsed laser deposition process2O3A buffer layer; using a pulsed laser deposition process on the Ga2O3Preparation of Ga on the surface of buffer layer2O3A thin film layer. The invention provides a method based on SiC and Ga2O3Firstly, forming Ga on the surface of a SiC substrate layer by a pulse laser deposition process2O3Buffer layer to reduce dislocation defect due to lattice mismatch, and then depositing on Ga by pulsed laser deposition process2O3Buffer layerSurface formation of Ga2O3Thin film layer to improve subsequent Ga growth2O3The crystallinity of the thin film layer finally realizes the preparation of high-crystalline Ga on the SiC substrate layer2O3The structure of the film material.
Description
Technical Field
The invention belongs to the technical field of microelectronics, and particularly relates to Ga based on a SiC substrate2O3Preparation method of film and Ga based on SiC substrate2O3A film.
Background
In recent years, Ga as a third generation semiconductor2O3The material has a large forbidden band width, a high breakdown electric field strength and a small on-resistance, so that the material is widely concerned by people and is the best material for developing power devices. Ga can be prepared by a method of high temperature or the like at present2O3And Ga having excellent optical properties and electrical properties which can be homoepitaxially grown thereon2O3The thin film can be used as a power electronic device, an ultraviolet photoelectric detector and an ultraviolet sensor with high performance, and has wide application prospect, however, the application of the power electronic device at high temperature is limited due to the lower thermal conductivity of the thin film.
SiC has excellent performance as the third-generation semiconductor material and has higher thermal conductivity, SiC and Ga2O3Not only can exert their respective advantages, but also can solve the problem of low thermal conductivity of gallium oxide, however, SiC and Ga2O3The existence of many defects due to large lattice mismatch limits its wide application.
Thus, SiC and Ga are solved2O3Growing gallium oxide film with high crystallization quality on the silicon carbide substrate due to defect problem caused by lattice mismatch, for future SiC and Ga2O3The combination of materials has great significance in the application of power electronic devices in high-temperature environments.
Disclosure of Invention
In order to solve the above problems in the prior art, the present invention provides a Ga based on a SiC substrate2O3Preparation method of film and Ga based on SiC substrate2O3A film. The invention is to solveThe technical problem is realized by the following technical scheme:
ga based on SiC substrate2O3A method of making a film comprising:
selecting a SiC substrate layer;
preparing Ga on the surface of the SiC substrate layer by using a pulsed laser deposition process2O3A buffer layer;
using a pulsed laser deposition process on the Ga2O3Preparation of Ga on the surface of buffer layer2O3A thin film layer.
In one embodiment of the invention, the thickness of the SiC substrate layer is 300-700 μm.
In one embodiment of the invention, Ga is prepared on the surface of the SiC substrate layer by a pulsed laser deposition process2O3A buffer layer, comprising:
sputtering Ga on the surface of the SiC substrate layer by utilizing a pulse laser deposition process in an oxygen and argon environment2O3Formation of Ga2O3A layer of material;
subjecting the Ga to an annealing process2O3Annealing the material layer to form the Ga2O3A buffer layer.
In one embodiment of the present invention, the process conditions of the pulsed laser deposition process include: vacuum degree of 6X 10-4～7×10-4Pa, the laser energy is 250-340 mJ, the laser frequency is 2-5 Hz, the target base distance is 5cm, and the pulse duration is 1 hour.
In one embodiment of the present invention, the Ga is annealed using an annealing process2O3Annealing the material layer to form the Ga2O3A buffer layer, comprising:
sequentially subjecting the Ga to oxygen, vacuum and nitrogen environments2O3Annealing the material layer to form the Ga2O3The buffer layer, and the process conditions of the annealing treatment include: the annealing temperature is 600 +/-5 ℃, the annealing time in oxygen is 2 hours, the annealing time in vacuum is 1 hour, and the annealing time in nitrogen is 2 hours.
In one embodiment of the present invention, the Ga is2O3The thickness of the buffer layer is 100 +/-5 nm.
In one embodiment of the invention, the Ga is deposited by a pulsed laser deposition process2O3Preparation of Ga on the surface of buffer layer2O3A film layer, comprising:
in an oxygen environment, using a pulsed laser deposition process to deposit Ga2O3Sputtering Ga on the surface of the buffer layer2O3Formation of Ga2O3A thin film layer.
In one embodiment of the present invention, the process conditions of the pulsed laser deposition process include: vacuum degree of 6X 10-4～7×10-4Pa, the laser energy is 250-340 mJ, the laser frequency is 2-5 Hz, the target base distance is 5cm, and the pulse duration is 1 hour.
In one embodiment of the present invention, the Ga is2O3The thickness of the thin film layer is 220 +/-5 nm.
An embodiment of the present invention also provides a Ga based on a SiC substrate2O3Film of Ga based on SiC substrate2O3Films using Ga based on SiC substrate as described in any of the above embodiments2O3A preparation method of the film, wherein the Ga based on the SiC substrate2O3The film includes:
a SiC substrate layer;
Ga2O3the buffer layer is positioned on the surface of the SiC substrate layer;
Ga2O3a thin film layer on the Ga2O3On the surface of the buffer layer.
The invention has the beneficial effects that:
the invention provides a method based on SiC and Ga2O3Firstly, forming Ga on the surface of a SiC substrate layer by a pulse laser deposition process2O3Buffer layer to reduce dislocation defect due to lattice mismatch, and then depositing by pulsed laserDeposition process on Ga2O3Ga is formed on the surface of the buffer layer2O3Thin film layer to improve subsequent Ga growth2O3The crystallinity of the thin film layer finally realizes the preparation of high-crystalline Ga on the SiC substrate layer2O3The structure of the film material.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Drawings
FIG. 1 is a schematic structural diagram of an apparatus for preparing a GaN epitaxial silicon carbide film according to an embodiment of the invention;
FIG. 2 shows Ga based on SiC substrate according to an embodiment of the present invention2O3A flow diagram of a method for preparing a thin film;
FIGS. 3a to 3c show Ga based on a SiC substrate according to an embodiment of the present invention2O3Schematic illustration of a process for the preparation of the film;
FIG. 4 shows Ga according to an embodiment of the present invention2O3Buffer layer annealing environment schematic diagram;
FIG. 5 shows Ga based on SiC substrate according to an embodiment of the present invention2O3Schematic representation of the film.
Description of reference numerals:
a SiC substrate layer-1; ga2O3A buffer layer-2; ga2O3Film layer-3; a rotatable target holder-4; target material-5; laser plume-6; a substrate-7; the substrate holder-8 can be heated and rotated; quartz window-9; laser beam-10; an air inlet-11; an air extraction opening-12; vacuum chamber-13.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
Example one
Before describing the method for fabricating a semiconductor structure based on a silicon carbide substrate provided in this embodiment, this embodiment first provides an apparatus for fabricating a gallium oxide epitaxial film of silicon carbide, and referring to fig. 1, fig. 1 is a diagram of an apparatus for fabricating a gallium oxide epitaxial film of silicon carbide according to an embodiment of the present inventionThe preparation equipment comprises a rotatable target holder 4, a target 5, a laser plume 6, a substrate 7, a heatable and rotatable substrate holder 8, a quartz window 9, a laser beam 10, an air inlet 11, an air extraction opening 12 and a vacuum chamber 13. The heatable rotary target holder 4 penetrates through the sputtering chamber to be connected with an external power supply, and the rotatable target holder 4 can be rotated in the experimental process; the target material 5 is used for placing Ga2O3When laser is incident to the surface of the target, the surface of the target can generate plasma to form laser plume 6; the substrate 7 is a silicon carbide substrate in this embodiment; the heatable rotary substrate holder 8 is connected to an external power supply and is used for enabling the substrate 7 to continuously rotate in the test engineering, ensuring the uniformity of the deposited film and heating the substrate 7; the quartz window 9 is mainly used for the laser beam 10 to enter; the gas inlet 11 can be used for introducing one gas or a plurality of mixed gases; the pumping port 12 is connected to an external molecular pump and a mechanical pump for evacuating the vacuum chamber 13 before the experiment.
Ga based on SiC substrate provided by the embodiment of the invention2O3The method for preparing the thin film may be based on the above apparatus, or may be based on other apparatuses, which is not specifically limited in this embodiment.
For better Ga of SiC-based substrate provided for this embodiment2O3The present example describes the preparation method of a film, and the present example is based on the preparation of Ga on a SiC substrate in the apparatus for preparing a silicon carbide epitaxial gallium oxide film2O3Referring to fig. 2, fig. 2 is a schematic view of a method for preparing a thin film, wherein Ga based on a SiC substrate according to an embodiment of the present invention is shown in fig. 22O3Schematic flow diagram of a method for producing a thin film, the Ga being based on a SiC substrate2O3The preparation method of the film specifically comprises the following steps:
s1, please refer to fig. 3a, selecting a SiC substrate layer 1;
specifically, the production technology of the SiC substrate layer is mature, and the quality of the prepared device is good; in addition, the silicon carbide has high thermal conductivity and good stability, and can be applied to the high-temperature growth process; finally, silicon carbide has excellent physicochemical properties, and the combination with gallium oxide enables high-power electronic devices with high performance. Therefore, the substrate layer of the present embodiment is made of silicon carbide.
Further, the thickness of the SiC substrate layer is 300-700 mu m, and preferably the thickness of the SiC substrate layer is 500 mu m.
S2, please refer to FIG. 3b, Ga is prepared on the surface of the SiC substrate layer 1 by using the pulse laser deposition process2O3 A buffer layer 2;
s21, sputtering Ga on the surface of the SiC substrate layer by utilizing a pulse laser deposition process in an oxygen and argon environment2O3Formation of Ga2O3A material layer, wherein the pulsed laser process is carried out on Ga under certain pulsed laser deposition conditions2O3The target is ablated so that the target surface atoms have sufficient capacity to be sputtered. The laser has higher energy during the deposition of the pulse laser, can give more energy to atoms to migrate on the substrate, and has higher film forming speed; ga2O3The buffer layer not only plays the role of the buffer layer, but also does not introduce other impurity elements.
Specifically, oxygen and argon are simultaneously introduced into a sputtering chamber as sputtering gases, and then a pulsed laser deposition process is utilized to sputter Ga on the surface of the SiC substrate layer2O3Target material to form Ga on the surface of the SiC substrate layer2O3A layer of material.
Further, the purity of oxygen and argon in percentage by mass is 99.999%, and the flow rate of oxygen can be 2cm3A/second; the flow rate of argon may be 0.5cm3Second while Ga2O3The mass ratio purity of the target material is more than 99.99 percent.
In addition, this example was carried out to prepare Ga2O3The conditions of the pulsed laser deposition process provided for the buffer layer include: substrate temperature, background vacuum degree, laser energy, pulse frequency, pulse duration and target base distance. Wherein, the sputtering target base distance refers to the distance between the sputtering target and the SiC substrate layer. This example is in the preparation of Ga2O3The process conditions for pulsed laser deposition of the buffer layer are preferably: the substrate temperature is room temperature, preferably 25 ℃; vacuum degree of 6X 10-4～7×10-4Pa, preferably 7X 10-4Pa; the laser energy is 250-340 mJ, the laser frequency is 2-5 Hz, the target base distance is 5cm, and the pulse duration is 1 hour. Because of Ga grown under other experimental conditions2O3The material layer is not compact and is not uniformly distributed, and the subsequent annealing is not favorable for forming Ga2O3A buffer layer. This example first prepares a layer of amorphous Ga of better quality2O3Material layer of Ga2O3The material layer can not play the role of a buffer layer, so dislocation can not be reduced, and Ga with better crystallization quality is formed after subsequent annealing treatment2O3The buffer layer can play a role of buffering.
S22, annealing process is used for Ga2O3Annealing the material layer to form Ga2O3A buffer layer.
Specifically, referring to FIG. 4, Ga is treated sequentially in an oxygen, vacuum and nitrogen environment2O3Annealing the material layer to cause Ga2O3The material layer is changed into Ga2O3Buffer layer, prepared Ga2O3The buffer layer has the structural characteristics of amorphous and nanocrystalline. First annealing under oxygen mainly to reduce Ga2O3Concentration of oxygen vacancies in the buffer layer and subsequent annealing in vacuum primarily to increase Ga2O3The crystallization quality of the buffer layer is finally annealed in nitrogen mainly to improve Ga2O3And the conductive performance of the buffer layer.
Further, the temperature of the annealing treatment in the embodiment is 600 ± 5 ℃, preferably 600 ℃, the annealing time in oxygen is 2 hours, the annealing time in vacuum is 1 hour, the annealing time in nitrogen is 2 hours, and when the annealing time is short, the film cannot fully react and is not beneficial to recrystallization; when the time is longer, the internal stress of the film is larger, so that the film is broken, and therefore, the proper annealing time is required. This embodiment alsoAnnealing treatment is carried out at 600 +/-5 ℃ so as to lead the SiC substrate and Ga to be mixed2O3Atoms at the contact of the buffer layer are diffused to cause the SiC substrate to contact Ga2O3The lattice constant between the buffer layers is reduced, thereby reducing the defect density caused by dislocation.
Preferably, Ga2O3The thickness of the buffer layer is 100 +/-5 nm. Ga2O3If the thickness of the buffer layer is too small, Ga tends to be adversely affected due to large crystal grains2O3Growth of thin film layers, and if too thick, SiC/Ga is affected2O3Performance of heterojunction devices.
S3, please refer to 3c, in Ga2O3Preparation of Ga on the surface of buffer layer 22O3A thin film layer 3;
specifically, in an oxygen environment, a pulsed laser deposition process is utilized to deposit Ga2O3Sputtering Ga on the surface of the buffer layer2O3Formation of Ga2O3A thin film layer.
Further, oxygen gas is first introduced into the sputtering chamber as a sputtering gas, wherein the oxygen gas has a purity of 99.999% by mass and the argon gas flow may be, for example, 0.5cm3A/second; then using pulsed laser deposition process to deposit Ga2O3Sputtering Ga on the surface of the buffer layer2O3Target material generation of Ga2O3A thin film layer.
Preferably, Ga2O3The mass specific purity of the target material is more than 99.99 percent.
In addition, this example was carried out to prepare Ga2O3The conditions of the pulsed laser deposition process provided for the thin film layer include: substrate temperature, background vacuum degree, laser energy, pulse frequency, pulse duration and target base distance. This example is in the preparation of Ga2O3The pulsed laser deposition process at the buffer layer is preferably: the substrate temperature is room temperature, preferably 25 ℃; vacuum degree of 6X 10-4～7×10-4Pa, preferably 7X 10-4Pa; the laser energy is 250-340 mJ, the laser frequency is 2-5 Hz, the target base distance is 5cm, and the pulse duration isFor 1 hour. If the vacuum degree is lower, more impurity gas in the chamber can pollute the prepared Ga2O3And when the vacuum degree is higher, the required time is increased, which is not beneficial to the experiment.
Preferably, Ga2O3The thickness of the thin film layer is 220 +/-5 nm. Ga2O3Too thick a film thickness will result in SiC/Ga2O3The performance of the heterojunction device is affected.
The method for preparing the gallium oxide film by silicon carbide epitaxy is to prepare Ga on a SiC substrate layer2O3The buffer layer can reduce Ga after annealing treatment is carried out on the buffer layer in the oxygen, vacuum and nitrogen environments in sequence2O3Defects caused by lattice mismatch between the buffer layer and the SiC substrate layer are more favorable for preparing Ga with high crystallization quality at proper temperature2O3A thin film layer.
Example two
Referring to fig. 5, fig. 5 shows Ga based on a SiC substrate according to an embodiment of the present invention2O3Schematic representation of the film. The embodiment of the invention provides Ga based on a SiC substrate2O3Film of Ga based on a SiC substrate2O3The film includes: SiC substrate layer 1, Ga2O3Buffer layer 2 and Ga2O3A thin film layer 3 of Ga2O3 A buffer layer 2 on the surface of the SiC substrate layer 1, Ga2O3The thin film layer 3 is located at Ga2O3On the surface of the buffer layer 2.
The semiconductor structure of the present embodiment is Ga based on a SiC substrate provided by the above-described embodiments2O3The preparation method of the film is similar to the realization principle and the technical effect, and the detailed description is omitted here
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples described in this specification can be combined and combined by those skilled in the art.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (10)
1. Ga based on SiC substrate2O3A method for producing a film, comprising:
selecting a SiC substrate layer;
preparing Ga on the surface of the SiC substrate layer by using a pulsed laser deposition process2O3A buffer layer;
using a pulsed laser deposition process on the Ga2O3Preparation of Ga on the surface of buffer layer2O3A thin film layer.
2. SiC substrate based Ga according to claim 12O3The preparation method of the film is characterized in that the thickness of the SiC substrate layer is 300-700 mu m.
3. SiC substrate based Ga according to claim 12O3The preparation method of the film is characterized in that the Ga is prepared on the surface of the SiC substrate layer by utilizing a pulse laser deposition process2O3A buffer layer, comprising:
sputtering Ga on the surface of the SiC substrate layer by utilizing a pulse laser deposition process in an oxygen and argon environment2O3Formation of Ga2O3A layer of material;
subjecting the Ga to an annealing process2O3Annealing the material layer to form the Ga2O3A buffer layer.
4. Ga based on a SiC substrate according to claim 32O3The preparation method of the film is characterized in that the process conditions of the pulse laser deposition process comprise: vacuum degree of 6X 10-4～7×10-4Pa, the laser energy is 250-340 mJ, the laser frequency is 2-5 Hz, the target base distance is 5cm, and the pulse duration is 1 hour.
5. Ga based on a SiC substrate according to claim 32O3A method for producing a thin film, characterized by annealing the Ga2O3Annealing the material layer to form the Ga2O3A buffer layer, comprising:
sequentially subjecting the Ga to oxygen, vacuum and nitrogen environments2O3Annealing the material layer to form the Ga2O3The buffer layer, and the process conditions of the annealing treatment include: the annealing temperature is 600 +/-5 ℃, the annealing time in oxygen is 2 hours, the annealing time in vacuum is 1 hour, and the annealing time in nitrogen is 2 hours.
6. SiC substrate based Ga according to claim 12O3A method for producing a thin film, characterized in that Ga is2O3The thickness of the buffer layer is 100 +/-5 nm.
7. SiC-based and Ga according to claim 12O3Characterized in that the Ga is deposited by a pulsed laser deposition process2O3Preparation of Ga on the surface of buffer layer2O3A film layer, comprising:
in an oxygen environment, using a pulsed laser deposition process to deposit Ga2O3Sputtering Ga on the surface of the buffer layer2O3Formation of Ga2O3A thin film layer.
8. SiC-based and Ga according to claim 72O3The method for preparing a semiconductor structure is characterized in that the process conditions of the pulsed laser deposition process comprise: vacuum degree of 6X 10-4～7×10-4Pa, the laser energy is 250-340 mJ, the laser frequency is 2-5 Hz, the target base distance is 5cm, and the pulse duration is 1 hour.
9. SiC-based and Ga according to claim 72O3Is characterized in that the Ga is used as a dopant2O3The thickness of the thin film layer is 220 +/-5 nm.
10. Ga based on SiC substrate2O3Film characterized by Ga based on a SiC substrate2O3Thin film Ga based on SiC substrate according to any one of claims 1 to 92O3A preparation method of the film, wherein the Ga based on the SiC substrate2O3The film includes:
a SiC substrate layer;
Ga2O3the buffer layer is positioned on the surface of the SiC substrate layer;
Ga2O3a thin film layer on the Ga2O3On the surface of the buffer layer.
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