CN105118853A - MgO substrate-based gallium oxide thin film and growing method thereof - Google Patents
MgO substrate-based gallium oxide thin film and growing method thereof Download PDFInfo
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- CN105118853A CN105118853A CN201510398366.3A CN201510398366A CN105118853A CN 105118853 A CN105118853 A CN 105118853A CN 201510398366 A CN201510398366 A CN 201510398366A CN 105118853 A CN105118853 A CN 105118853A
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 title claims abstract description 63
- 229910001195 gallium oxide Inorganic materials 0.000 title claims abstract description 63
- 239000000758 substrate Substances 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 title claims abstract description 21
- 239000010409 thin film Substances 0.000 title abstract description 11
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims abstract description 28
- 238000000137 annealing Methods 0.000 claims abstract description 15
- 238000004549 pulsed laser deposition Methods 0.000 claims description 50
- 238000000576 coating method Methods 0.000 claims description 26
- 239000011248 coating agent Substances 0.000 claims description 23
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 22
- 239000001301 oxygen Substances 0.000 claims description 22
- 229910052760 oxygen Inorganic materials 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 12
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims 2
- 230000002000 scavenging effect Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000013078 crystal Substances 0.000 abstract description 4
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- 230000003746 surface roughness Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 28
- 238000005516 engineering process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N ferric oxide Chemical compound O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 238000001657 homoepitaxy Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02483—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
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- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
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- Chemical & Material Sciences (AREA)
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- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
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Abstract
The invention discloses an MgO substrate-based gallium oxide thin film and the growing method thereof, and mainly solves the problem of poor surface appearance and small crystal grain size of conventional gallium oxide thin films. The gallium oxide thin film comprises an MgO substrate(1) and a gallium oxide epitaxial layer (3), and is characterized in that a 5-10nm gallium oxide buffer layer (2) is arranged between the MgO substrate(1) and the gallium oxide epitaxial layer (3), and the crystallization quality of the gallium oxide buffer layer is improved through thermal annealing. The surface roughness of a Ga2O3 is reduced, the surface appearance of the Ga2O3 is improved, and the crystal grain size of the Ga2O3 is increased. The MgO substrate-based gallium oxide thin film can be used to manufacture a semiconductor power device.
Description
Technical field
The invention belongs to microelectronics technology, relate to the growing method of semi-conducting material, specifically a kind of Ga2O3 film manufacturing method, can be used for making semiconductor power device.
Background technology
, the characteristic such as breakdown electric field high, thermal conductivity high, saturated electrons speed large and heterojunction boundary two-dimensional electron gas high large with its energy gap with SiC and the GaN third generation semiconductor that is representative, makes it be subject to extensive concern in recent years.Although third generation semiconductor materials and devices achieves great progress, and enters practical stage, due to SiC and GaN material exist many defects make its on a large scale in application be still very restricted.For this reason, on SiC and GaN material growth, device manufacture and the basis of applying, people are also in the deficiency that continuous searching itself has homo-substrate, excellent, the low-cost semi-conducting material of material property can make up above-mentioned bi-material, and simultaneously wider, the disruptive field intensity of energy gap is suitable for more greatly manufacturing power device.
Ga2O3 semi-conducting material especially causes the interest of people, and Ga2O3 semi-conducting material energy gap is large, and disruptive field intensity is high, conducting resistance is little, can carry out homoepitaxy, be that the optimal material of power device development is selected.Ga2O3 belongs to monoclinic crystal, and energy gap is about 4.8eV-4.9eV.Obtained at present the Ga2O3 single crystalline substrate of 2 inches and 4 inches by float-zone method and EFG technique, can obtain that defect dislocation is few, lattice structure is relatively complete by the method for isoepitaxial growth Ga2O3 film in Ga2O3 single crystalline substrate, carrier concentration has been 10
17cm
-3~ 10
19cm
-3continually varying high-quality thin film, has excellent optical property and stable physicochemical property, can be used for making high performance power electronic device, Ultraviolet sensor, day blind detector etc., be with a wide range of applications.
In order to better utilize the advantage of material, people have carried out large quantifier elimination to the growth of Ga2O3 film.The growing method adopted mainly contains: pulsed laser deposition PLD, sol-gel process, chemical vapour deposition technique CVD, metal organic chemical vapor deposition MOCVD and magnetron sputtering method etc.
Pulsed laser deposition PLD is that the scope of application that development in recent years is got up is the widest, most promising masking technique.In simple terms, pulsed laser deposition PLD is exactly that pulsed laser beam focuses on solid target surface, and the superpower power of laser makes target material rapid plasma, and then sputter is on object.It has the following advantages: 1. because laser photon energy is very high, can the coating of a lot of difficulty of Slag coating: as high-temperature superconducting thin film, ceramic oxide film, multiple layer metal film etc.; PLD can be used for synthesis of nano pipe, nanometer powder etc.2.PLD can by controlling laser energy and umber of pulse, accurate control thickness.3. easily obtain the multi-component film expecting stoichiometric proportion.4. deposition rate is high, and the test period is short, and underlayer temperature requires low.5. technological parameter regulates arbitrarily.6. be convenient to clean, multiple thin-film material can be prepared.
But, current employing PLD deposits Ga2O3 film and all adopts single growth method, namely in growth course, identical technological parameter is adopted, comprise oxygen pressure, laser energy, underlayer temperature etc. to grow, Ga2O3 film surface appearance that heteroepitaxy obtains is poor, crystallite dimension is little to make to adopt PLD technology to carry out on MgO substrate.
Summary of the invention
The object of the invention is to the deficiency for above-mentioned existing pulsed laser deposition PLD, a kind of gallium oxide film based on MgO substrate and growing method thereof are proposed, with by the adjustment of technological parameter and optimization, reduce roughness of film, improve Ga2O3 film surface appearance, obtain high-quality Ga2O3 semiconductor material with wide forbidden band.
Technical scheme of the present invention is achieved in that
1. based on the gallium oxide film of MgO substrate, comprise MgO substrate and gallium oxide epitaxial loayer, it is characterized in that: the gallium oxide resilient coating being provided with 5-10nm between MgO substrate and gallium oxide epitaxial loayer.
2., based on the growing method of the gallium oxide film of MgO substrate, comprise the steps:
(1) MgO substrate is cleaned, and dry up with nitrogen;
(2) utilize PLD equipment at the gallium oxide resilient coating of MgO Grown 5 ~ 10nm, its technological parameter is:
Underlayer temperature 550 DEG C ~ 600 DEG C,
Partial pressure of oxygen 0.008mbar ~ 0.015mbar,
Laser energy 430mJ ~ 470mJ,
Laser frequency 2Hz ~ 3Hz;
(3) in oxygen atmosphere, thermal annealing is carried out to gallium oxide resilient coating;
(4) technological parameter changing PLD grows gallium oxide epitaxial loayer on gallium oxide resilient coating.Its technological parameter is:
Underlayer temperature 650 DEG C ~ 700 DEG C,
Partial pressure of oxygen 0.045mbar ~ 0.055mbar,
Laser energy 320mJ ~ 350mJ,
Laser frequency 2Hz ~ 3Hz;
The present invention owing to being provided with Ga2O3 resilient coating between MgO substrate and Ga2O3 epitaxial loayer, the coverage rate of reactant atom on substrate when improve Ga2O3 film initial growth, add seed crystal Enhancing Nucleation Density, simultaneously owing to heat-treating Ga2O3 resilient coating, improve the crystalline quality of resilient coating; In addition owing to being carried out the growth of Ga2O3 epitaxial loayer by the epitaxially grown technological parameter of adjustment, not only increase Ga2O3 crystallite dimension, reduce roughness of film, and improve the surface topography of whole Ga2O3 film.
Accompanying drawing explanation
Fig. 1 is cross-sectional view of the present invention;
Fig. 2 is process flow diagram of the present invention.
Embodiment
With reference to Fig. 1, the present invention includes MgO substrate 1, resilient coating 2 and epitaxial loayer 3.Wherein the high preferred orientation of MgO substrate 1 is (100), and epitaxial loayer 3 adopts thickness to be the Ga2O3 material of 100 ~ 150nm, and resilient coating 2 adopts thickness to be the Ga2O3 material of 5 ~ 10nm, and between MgO substrate 1 and epitaxial loayer 3.
With reference to Fig. 2, manufacture method of the present invention provides following three kinds of embodiments:
Embodiment 1, makes the gallium oxide film that buffer layer thickness is 5nm.
Step 1, cleaning MgO substrate.
(1a) acetone and washes of absolute alcohol MgO substrate 5min is used respectively;
(1b) MgO substrate is placed in the sulfuric acid of 160 DEG C and the mixed liquor of phosphoric acid soaks 15min, the ratio of sulfuric acid and phosphoric acid is 3:1;
(1c) the MgO substrate after soaking by rinsed with deionized water, and dry up with dry nitrogen.
Step 2, growth thickness is the gallium oxide resilient coating of 5nm.
(2a) the MgO substrate after cleaning is put into pulsed laser deposition PLD chamber, the vacuum degree of pulsed laser deposition PLD chamber is extracted into 10
-6mbar, the distance between substrate and gallium oxide target is adjusted to 50mm, and the rotating speed of target keeps 30rpm;
(2b) by MgO silicon to 550 DEG C, in adjustment pulsed laser deposition PLD chamber, partial pressure of oxygen is 0.008mbar, and arranging laser energy is 430mJ, and laser frequency is 2Hz, and pulse number is 800 growth Ga2O3 resilient coatings;
(2c) after buffer growth terminates, in pulsed laser deposition PLD chamber, be filled with the oxygen of 200mbar, then allow the gallium oxide buffer layer thin film of growth naturally cool.
Step 3, carries out thermal annealing to gallium oxide resilient coating in oxygen atmosphere, and annealing temperature is 700 DEG C, annealing time 70min.
Step 4, growth thickness is the gallium oxide epitaxial loayer of 100nm.
(4a) the gallium oxide resilient coating after thermal annealing is put into pulsed laser deposition PLD chamber, the vacuum degree of chamber is extracted into 10
-6mbar, the distance between adjustment substrate and target is 50mm, and the rotating speed of target keeps 30rpm;
(4b) the epitaxially grown technological parameter of pulsed laser deposition PLD is set: underlayer temperature 650 DEG C, partial pressure of oxygen 0.045mbar, laser energy 320mJ, laser frequency 3Hz, pulse number 8000 epitaxial growth gallium oxide films of laser;
(4c) be filled with the oxygen of 200mbar in the backward chamber that outer layer growth terminates, then allow gallium oxide epitaxial loayer film naturally cool, complete the gallium oxide film making that gallium oxide buffer layer thickness is 5nm.
Embodiment 2, makes the gallium oxide film that buffer layer thickness is 8nm.
Step one, cleaning MgO substrate.
This step is identical with the step 1 of embodiment 1.
Step 2, growth thickness is the gallium oxide resilient coating of 8nm.
2.1) the MgO substrate after cleaning is put into pulsed laser deposition PLD chamber, the vacuum degree of pulsed laser deposition PLD chamber is extracted into 10
-6mbar, the distance between substrate and gallium oxide target is adjusted to 50mm, and the rotating speed of target keeps 30rpm;
2.2) by MgO silicon to 570 DEG C, in adjustment pulsed laser deposition PLD chamber, partial pressure of oxygen is 0.01mbar, and arranging laser energy is 450mJ, and laser frequency is 3Hz, and pulse number is 1200 growth Ga2O3 resilient coatings;
2.3) after buffer growth terminates, in pulsed laser deposition PLD chamber, be filled with the oxygen of 200mbar, then allow the gallium oxide buffer layer thin film of growth naturally cool.
Step 3, to gallium oxide resilient coating thermal annealing 60min at the temperature of 800 DEG C in oxygen atmosphere.
Step 4, growth thickness is the gallium oxide epitaxial loayer of 150nm.
4.1) the gallium oxide resilient coating after thermal annealing is put into pulsed laser deposition PLD chamber, the vacuum degree of chamber is extracted into 10
-6mbar, the distance between adjustment substrate and target is 50mm, and the rotating speed of target keeps 30rpm;
4.2) adopt pulsed laser deposition PLD method at gallium oxide resilient coating Epitaxial growth gallium oxide film, its epitaxially grown technological parameter is:
Underlayer temperature 675 DEG C,
Partial pressure of oxygen 0.05mbar,
Laser energy 340mJ,
Laser frequency 3Hz,
The pulse number of laser 12000 times;
4.3) be filled with the oxygen of 200mbar in the backward chamber that outer layer growth terminates, then allow gallium oxide epitaxial loayer film naturally cool, complete the gallium oxide film making that gallium oxide buffer layer thickness is 8nm.
Embodiment 3, makes the gallium oxide film that buffer layer thickness is 10nm.
Steps A, cleaning MgO substrate.
The realization of this step is identical with the step 1 in embodiment 1.
Step B, growth thickness is the gallium oxide resilient coating of 10nm.
(B1) the MgO substrate after cleaning is put into pulsed laser deposition PLD chamber, the vacuum degree of pulsed laser deposition PLD chamber is extracted into 10
-6mbar, the distance between substrate and gallium oxide target is adjusted to 50mm, and the rotating speed of target keeps 30rpm;
(B2) by silicon to 600 DEG C, in adjustment pulsed laser deposition PLD chamber, partial pressure of oxygen is 0.015mbar, and arranging laser energy is 470mJ, and laser frequency is 2Hz, and pulse number is 1500 growth Ga2O3 resilient coatings;
(B3) after buffer growth terminates, in pulsed laser deposition PLD chamber, be filled with the oxygen of 200mbar, then allow the gallium oxide buffer layer thin film of growth naturally cool.
Step C, arranging annealing temperature is 900 DEG C, gallium oxide resilient coating is carried out to the thermal annealing of 50min in oxygen atmosphere.
Step D, growth thickness is the gallium oxide epitaxial loayer of 125nm.
(D1) the gallium oxide resilient coating after thermal annealing is put into pulsed laser deposition PLD chamber, the vacuum degree of chamber is extracted into 10
-6mbar, the distance between adjustment substrate and target is 50mm, and the rotating speed of target keeps 30rpm;
(D2) arrange the technological parameter of pulsed laser deposition PLD, at gallium oxide resilient coating Epitaxial growth gallium oxide film, epitaxially grown technological parameter is: underlayer temperature 700 DEG C, partial pressure of oxygen 0.055mbar, laser energy 350mJ, laser frequency 2Hz, the pulse number of laser 10000 times;
(D3) be filled with the oxygen of 200mbar in the backward chamber that outer layer growth terminates, then allow gallium oxide epitaxial loayer film naturally cool, complete the gallium oxide film making that gallium oxide buffer layer thickness is 10nm.
More than describing is only three instantiations of the present invention; do not form any limitation of the invention; obviously for the professional person of this area; after having understood content of the present invention and principle; all may when not deviating from the principle of the invention, structure; carry out the various parameters revision in form and details and change, but these based on inventive concept correction and change still within claims of the present invention.
Claims (6)
1. based on the gallium oxide film of MgO substrate, comprise MgO substrate (1) and gallium oxide epitaxial loayer (3), it is characterized in that: the gallium oxide resilient coating (2) being provided with 5-10nm between MgO substrate (1) and gallium oxide epitaxial loayer (3).
2. the gallium oxide film based on MgO substrate according to claim 1, is characterized in that: epitaxial loayer (3) adopts Ga2O3 material, and thickness is 100 ~ 150nm.
3. the gallium oxide film based on MgO substrate according to claim 1, is characterized in that: the high preferred orientation of MgO substrate (1) is (100).
4., based on the growing method of the gallium oxide film of MgO substrate, comprise the steps:
(1) MgO substrate is cleaned, and dry up with nitrogen;
(2) utilize pulsed laser deposition PLD equipment at the gallium oxide resilient coating of MgO Grown 5 ~ 10nm, its technological parameter is:
Underlayer temperature 550 DEG C ~ 600 DEG C,
Partial pressure of oxygen 0.008mbar ~ 0.015mbar,
Laser energy 430mJ ~ 470mJ,
Laser frequency 2Hz ~ 3Hz;
(3) in oxygen atmosphere, thermal annealing is carried out to gallium oxide resilient coating;
(4) technological parameter of change pulsed laser deposition PLD gallium oxide resilient coating after annealing grows gallium oxide epitaxial loayer, its technological parameter is:
Underlayer temperature 650 DEG C ~ 700 DEG C,
Partial pressure of oxygen 0.045mbar ~ 0.055mbar,
Laser energy 320mJ ~ 350mJ,
Laser frequency 2Hz ~ 3Hz.
5. the growing method of the gallium oxide film based on MgO substrate according to claim 4, is characterized in that: in oxygen atmosphere, the process conditions of thermal annealing are: annealing temperature 700 DEG C ~ 900 DEG C, annealing time 50 ~ 70min.
6. the growing method of the gallium oxide film based on MgO substrate according to claim 4, it is characterized in that: to the cleaning of MgO substrate, be carry out in the mixed solution of sulfuric acid and phosphoric acid, in mixed solution, the ratio of sulfuric acid and phosphoric acid is 3:1, scavenging period 15min.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106876483A (en) * | 2017-01-23 | 2017-06-20 | 西安电子科技大学 | High-breakdown-voltage Schottky diode and preparation method |
| CN109136859A (en) * | 2018-10-22 | 2019-01-04 | 哈尔滨工业大学 | A method of preparing high transparency gallium oxide film |
| CN113471064A (en) * | 2021-06-30 | 2021-10-01 | 中国科学技术大学 | Method for preparing III-group oxide film based on oblique-angle substrate and epitaxial wafer thereof |
| CN113517173A (en) * | 2021-06-07 | 2021-10-19 | 西安电子科技大学 | Homoepitaxy beta-Ga2O3Film and preparation method thereof |
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| CN101967680A (en) * | 2010-11-04 | 2011-02-09 | 山东大学 | Method for preparing monoclinic gallium oxide single-crystal film on magnesium oxide substrate |
| WO2013035464A1 (en) * | 2011-09-08 | 2013-03-14 | 株式会社タムラ製作所 | Crystal laminate structure and method for producing same |
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|---|---|---|---|---|
| CN101967680A (en) * | 2010-11-04 | 2011-02-09 | 山东大学 | Method for preparing monoclinic gallium oxide single-crystal film on magnesium oxide substrate |
| WO2013035464A1 (en) * | 2011-09-08 | 2013-03-14 | 株式会社タムラ製作所 | Crystal laminate structure and method for producing same |
Non-Patent Citations (2)
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| CN106876483B (en) * | 2017-01-23 | 2019-10-11 | 西安电子科技大学 | High-breakdown-voltage Schottky diode and production method |
| CN109136859A (en) * | 2018-10-22 | 2019-01-04 | 哈尔滨工业大学 | A method of preparing high transparency gallium oxide film |
| CN113517173A (en) * | 2021-06-07 | 2021-10-19 | 西安电子科技大学 | Homoepitaxy beta-Ga2O3Film and preparation method thereof |
| CN113517173B (en) * | 2021-06-07 | 2024-03-19 | 西安电子科技大学 | Homoepitaxial beta-Ga 2 O 3 Film and method for producing the same |
| CN113471064A (en) * | 2021-06-30 | 2021-10-01 | 中国科学技术大学 | Method for preparing III-group oxide film based on oblique-angle substrate and epitaxial wafer thereof |
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