CN112687525B - Epitaxial method for improving quality of ultrathin gallium nitride field effect transistor - Google Patents
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Abstract
The invention discloses an epitaxial method for improving the quality of an ultrathin gallium nitride field effect transistor crystal, and belongs to the technical field of semiconductor epitaxial materials. The method utilizes the material growth technologies such as metal organic chemical vapor deposition and the like, improves the quality of an aluminum nitride/gallium nitride interface through the early-stage organic gallium source infiltration pretreatment, inhibits the generation of interface dislocation, and realizes the rapid annihilation of the gallium nitride threading dislocation by carrying out high-temperature annealing recrystallization at the later stage, thereby greatly reducing the dislocation density at the initial growth stage of the gallium nitride composite buffer layer and further realizing the preparation of the high-crystal quality gallium nitride field effect tube material with the total epitaxial thickness of 200-500 nm. The invention can greatly reduce the thickness of the gallium nitride buffer layer on the premise of ensuring the crystal quality, is favorable for improving the power and frequency characteristics of a device and obviously reduces the epitaxial cost; meanwhile, the growth method is compatible with the conventional gallium nitride epitaxial process, has good controllability and higher practical value.
Description
Technical Field
The invention relates to an epitaxial method for improving the quality of an ultrathin gallium nitride field effect transistor crystal, and belongs to the technical field of semiconductor epitaxial materials.
Background
The gallium nitride high mobility field effect transistor is a novel semiconductor electronic device which generates high-concentration two-dimensional electron gas at a heterojunction interface channel based on the specific polarization effect of nitride and controls a channel switch by changing grid voltage, has the characteristics of high frequency, high power and high temperature resistance, is more suitable for developing high-temperature, high-voltage and high-power microwave devices, and has very important significance in the application of high-end technical fields such as military, mobile communication, radar and the like.
Since the preparation of gallium nitride bulk single crystal materials is very difficult, gallium nitride single crystal thin films are generally obtained by heteroepitaxy. The silicon carbide substrate and the gallium nitride have small lattice mismatch and thermal mismatch and high electric conduction and thermal conductivity, so that the silicon carbide-based gallium nitride high-mobility field effect transistor has higher power characteristic, reliability and lower radio frequency loss, and therefore, the silicon carbide substrate is adopted by over 95 percent of commercial gallium nitride microwave devices at present. However, there is some lattice mismatch and thermal mismatch between the silicon carbide substrate and the gallium nitride single crystal thin film, and a high density (10) is generated in the epitaxial layer8～1010cm-2) Not only the crystal quality and surface appearance of the epitaxial material are deteriorated, but also the power performance of the device is affectedEnergy, yield and reliability. Therefore, the problems to be solved are to be solved by reducing the dislocation density and improving the crystal quality of the epitaxial material.
The defects which are most widely distributed in the gallium nitride epitaxial layer and have the greatest influence on the performance of materials and devices are threading dislocations perpendicular to the surface of the substrate, mainly originate from the merging process of high-temperature gallium nitride nucleation islands grown on the nucleation layer, and the dislocations are generally turned and annihilated along with the increase of the epitaxial thickness, so that in order to obtain high-quality gallium nitride high-mobility field effect tube epitaxial materials, the thickness of the epitaxial layer of a conventional gallium nitride high-mobility field effect tube is generally more than 1.5 mu m, the cost consumption is increased, and meanwhile, doping compensation is needed to obtain high-resistance performance. Aiming at the requirement of increasing the output power of the gallium nitride power tube continuously, the material of the gallium nitride high mobility field effect tube needs to meet the performance requirements of higher working voltage and higher output power density. However, due to the thick epitaxial layer of the conventional gan fet, the doping saturation effect and the heat dissipation problem further limit the further development of the sic-based gan microwave power device technology. In addition, the thickness of the gallium nitride buffer layer in the gallium nitride high-mobility field effect transistor accounts for more than 95%, the gallium nitride buffer layer belongs to a main epitaxial cost consumption layer, the thickness is reduced by 80% -90%, the epitaxial cost can be effectively reduced by more than 50%, the epitaxial time consumption is reduced by 30%, the epitaxial productivity is effectively improved, and the requirement of future gallium nitride market expansion is better met. Therefore, the development of the novel ultrathin high-mobility gallium nitride field effect transistor adopts an unintentional doping epitaxy technology to greatly reduce the thickness of the gallium nitride buffer layer and further improve the crystal quality, and the novel high-mobility gallium nitride field effect transistor has very important significance for improving the performance of a microwave power device and reducing the cost.
Disclosure of Invention
Aiming at the ultra-thin gallium nitride field effect transistor with the total thickness of the epitaxial layer being 200-500 nm, the invention provides the epitaxial method for improving the crystal quality of the ultra-thin gallium nitride field effect transistor, and the generation of interface dislocation is reduced, meanwhile, the rapid annihilation of threading dislocation is realized, and the crystal quality of the ultra-thin gallium nitride field effect transistor is obviously improved.
The invention adopts the following technical scheme for solving the technical problems:
an epitaxial method for improving the quality of an ultrathin gallium nitride field effect transistor comprises the following steps:
the method comprises the following steps: selecting a silicon carbide single crystal substrate, and placing the silicon carbide single crystal substrate on a reaction chamber base in metal organic chemical vapor deposition material growth equipment;
step two: setting the pressure of a reaction chamber to be 100-200 mbar, and introducing H2The temperature of the system is raised to 1000-1100 ℃ under H2Baking the substrate for 5-15 minutes in the atmosphere to remove the sticky dirt on the surface of the substrate;
step three: maintenance of H2The flow is not changed, the pressure in the reaction chamber is reduced to 50-150 mbar, the temperature is continuously increased to 1100-1200 ℃, and NH is introduced3And an aluminum source, and growing an aluminum nitride nucleating layer with the thickness of 20-60 nm;
step four: retention of H2Constant flow at NH3Reducing the temperature to 1000-1100 ℃ in the atmosphere, increasing the pressure to 150-350 mbar, and closing NH after the airflow is stable3Introducing a gallium source to perform surface infiltration treatment for 0.3-2 minutes;
step five: after the completion of the impregnation, NH was opened3Growing a gallium nitride buffer layer with the thickness of 20-80 nm, and closing a gallium source;
step six: maintaining the pressure of the reaction chamber H2Flow rate and NH3The flow is unchanged, the temperature is increased by 50-100 ℃, and high-temperature annealing treatment is carried out for 1-3 minutes;
step seven: after the annealing is finished, the pressure and H of the reaction chamber are maintained2Flow rate and NH3The flow is unchanged, and the temperature is reduced to 1000-1100 ℃; opening a gallium source, growing a gallium nitride channel layer, and closing the gallium source after the total thickness of gallium nitride reaches 150-400 nm;
step eight: growing an aluminum nitride insertion layer with a thickness of 0.5-2 nm and an aluminum gallium nitride Al with a thickness of 5-30 nmxGa1- xThe N barrier layer and the gallium nitride cap layer with the thickness of 1-5 nm;
step nine: after the epitaxial growth is completed, the growth source is turned off and NH is added3And (5) cooling in the atmosphere.
The gallium nitride epitaxial layer comprises the gallium nitride buffer layer in the fifth step and the gallium nitride channel layer in the seventh step, and the total thickness is 150-400 nm.
Fifthly, performing metal source pretreatment and high-temperature annealing recrystallization on the gallium nitride buffer layer before and after growth.
The invention has the following beneficial effects:
on the basis of ensuring the quality of the material crystal, the invention reduces the thickness of the epitaxial layer of the gallium nitride high-mobility field effect transistor by 80-90%, can effectively reduce the epitaxial cost by more than 50%, simultaneously reduces the epitaxial time consumption by 30%, effectively improves the epitaxial efficiency, and better meets the market expansion requirements of the gallium nitride material and the device in the future. In addition, the novel ultrathin gallium nitride high-mobility field effect transistor adopts an unintentional doping epitaxy technology, so that the thickness of the gallium nitride buffer layer is greatly reduced, the crystal quality is further improved, and the ultrathin gallium nitride high-mobility field effect transistor has important significance for improving the performance of a microwave power device and reducing the cost.
Drawings
Fig. 1 is a schematic view of an ultra-thin gan fet structure, wherein: 1. a silicon carbide substrate; 2. an aluminum nitride nucleation layer; 3a, a gallium nitride composite buffer layer; 3b, a gallium nitride channel layer; 4. an aluminum nitride insertion layer; 5. an aluminum gallium nitride barrier layer; 6. a gallium nitride cap layer.
FIG. 2 is a transmission electron microscope test result diagram of the epitaxial structure of the ultrathin GaN field effect tube.
Fig. 3 (a) is a diagram of an actual effect of annihilation of interfacial dislocations, and fig. 3 (b) is a diagram of an actual effect of transition of interfacial dislocations.
FIG. 4 is a graph of the results of the surface swing curve high resolution mode test of GaN field effect transistor epitaxial materials: (a) a gallium nitride composite buffer layer is present, and (b) the gallium nitride composite buffer layer is absent.
Detailed Description
The technical solution of the present invention is described in detail below, but the scope of the present invention is not limited to the embodiments.
Aiming at the initial growth of gallium nitride generated in a large number of dislocations, the invention introduces the gallium nitride composite buffer layer, improves the quality of an interface between aluminum nitride and gallium nitride through the infiltration pretreatment of an organic gallium source in the early stage, inhibits the generation of interface dislocation, and carries out high-temperature annealing recrystallization treatment on the gallium nitride composite buffer layer to realize the rapid annihilation of gallium nitride threading dislocation, thereby greatly reducing the dislocation density of the gallium nitride epitaxial material in the initial growth stage and further realizing the preparation of the high-crystal quality gallium nitride field effect tube epitaxial material with the total epitaxial thickness of 200-500 nm.
As shown in fig. 1, the ultra-thin gan fet sequentially comprises, in order from bottom to top, the following epitaxial growth steps: a silicon carbide substrate 1, an aluminum nitride nucleation layer 2, a gallium nitride composite buffer layer 3a, a gallium nitride channel layer 3b, an aluminum nitride insertion layer 4, an aluminum gallium nitride barrier layer 5 and a gallium nitride cap layer 6.
An epitaxial method for improving the quality of an ultrathin gallium nitride field effect transistor comprises the following steps:
the method comprises the following steps: selecting a silicon carbide single crystal substrate, and placing the silicon carbide single crystal substrate on a base in equipment for growing Metal Organic Chemical Vapor Deposition (MOCVD) and other materials;
step two: setting the pressure of a reaction chamber to be 100-200 mbar, and introducing H2The temperature of the system is raised to 1000-1100 ℃ under H2Baking the substrate for 5-15 minutes in the atmosphere to remove surface contamination;
step three: maintenance of H2The flow is not changed, the pressure in the reaction chamber is reduced to 50-150 mbar, the temperature is continuously raised to 1100-1200 ℃, and NH is introduced3And an aluminum source, and growing an aluminum nitride nucleating layer with the thickness of 20-60 nm;
step four: retention of H2Flow constant at NH3Reducing the temperature to 1000-1100 ℃ in the atmosphere, increasing the pressure to 150-350 mbar, and closing NH after the airflow is stable3And introducing a gallium source for surface infiltration treatment for 0.3-2 minutes.
Step five: after the infiltration is complete, the NH is opened3Growing a gallium nitride buffer layer with the thickness of 20-80 nm, and closing the gallium source.
Step six: maintaining the pressure of the reaction chamber H2Flow rate and NH3The flow is unchanged, the temperature is increased by 50-100 ℃, and high-temperature annealing treatment is carried out for 1-3 minutes.
Step seven: after the annealing is finished, maintaining the pressure of the reaction chamberForce, H2Flow rate and NH3The flow is unchanged, and the temperature is reduced to 1000-1100 ℃. And opening the gallium source, growing the gallium nitride channel layer until the total thickness of the gallium nitride reaches 150-400 nm, and closing the gallium source.
Step eight: growing an aluminum nitride insertion layer with a thickness of 0.5-2 nm and aluminum gallium nitride Al with a thickness of 10-30 nmxGa1-xAn N barrier layer (wherein x is more than or equal to 0 and less than 0.5) and a gallium nitride cap layer with the thickness of 1-5 nm;
step nine: after the epitaxial growth is completed, the growth source is turned off at NH3And cooling in the atmosphere, and finally taking out the gallium nitride epitaxial wafer.
In the invention, the epitaxial material structure of the gallium nitride field effect tube comprises an aluminum nitride nucleating layer, a gallium nitride composite buffer layer, a gallium nitride channel layer, an aluminum nitride insertion layer, an aluminum gallium nitride barrier layer and a gallium nitride cap layer, and the total thickness of the epitaxial layer does not exceed 500nm by adopting an unintentional doping growth mode. In order to reduce the dislocation density and improve the crystal quality, a gallium nitride composite buffer layer is introduced between a gallium nitride channel layer and an aluminum nitride nucleation layer, the interface of aluminum nitride and gallium nitride is processed, the generation of dislocation is inhibited, the dislocation extension mode is regulated and controlled, the dislocation density of a gallium nitride material is reduced, and the crystal quality is improved.
In the invention, the aluminum nitride nucleation layer in the third step is required to have a thickness of 20-100 nm, aluminum nitride is deposited on the heterogeneous substrate in an island growth mode, and the aluminum nitride nucleation islands are combined transversely to form a film at a high temperature and generally need to be accumulated in a certain thickness. In order to ensure the interface quality of the aluminum nitride nucleation layer and the gallium nitride buffer layer, the aluminum nitride needs to be completely formed into a film and presents better surface quality, so that the thickness of the aluminum nitride nucleation layer is not less than 20 nm. In addition, if the thickness of the aluminum nitride nucleation layer is too thick, the surface undulation is increased, which can lead to the initial three-dimensional growth of gallium nitride, and this way of lateral combination of gallium nitride can introduce a large amount of dislocations, which can lead to lateral leakage at the interface and affect the application performance of the device. Therefore, the thickness of the aluminum nitride nucleation layer is 20-60 nm.
In the invention, the surface of the aluminum nitride nucleation layer in the fourth step adopts a gallium source infiltration treatment process to prevent the gallium source from being NH3Consumption of the reaction in the gas phase in advance, the need to shut off NH3. Due to lattice mismatch and thermal mismatch between the aluminum nitride and the substrate, the aluminum nitride nucleation layer has high density of surface defects and has high defect density in H2Further etching deterioration under the atmosphere seriously affects the deposition and growth of the subsequent gallium nitride buffer layer. The invention first reduces surface etching by lowering the temperature of the reaction chamber, at H2And introducing a gallium source to deposit on the surface of the aluminum nitride nucleation layer in the atmosphere, and promoting the combination of surface defect pits, so that the surface quality of the aluminum nitride nucleation layer is improved, and the purpose of regulating and controlling the interface is realized. In order to achieve the filling effect and further inhibit the extension of dislocation of the aluminum nitride nucleation layer and the generation of interface dislocation, the gallium source pretreatment time is set to be 0.3-2 minutes.
In the invention, the thickness of the gallium nitride buffer layer in the fifth step is 20-80 nm, and the gallium nitride buffer layer has the function of realizing rapid annihilation after interface dislocation extension. In order to ensure the device performance of the gan field effect transistor, the interface dislocation should be prevented from extending to the gan channel layer, and thus the gan buffer layer should have a certain thickness. In addition, if the dislocation extension distance is too long, the thickness of the gallium nitride buffer layer is increased, and the increase of the thickness ratio can cause the layer with poor crystal quality to influence the comprehensive crystal quality of the gallium nitride field effect transistor, so the thickness of the gallium nitride buffer layer is not suitable to be too thick. Therefore, the thickness of the GaN buffer layer specified in the patent is 20-80 nm.
In the invention, the gallium nitride buffer layer in the sixth step needs to be subjected to high-temperature annealing treatment, namely, the gallium nitride buffer layer is recrystallized at high temperature, so that dislocation extension caused by lattice mismatch and thermal mismatch is further regulated and controlled, and dislocation steering is realized. In order to ensure the annealing effect, the annealing temperature is increased by 50-100 ℃ compared with the growth temperature of the gallium nitride buffer layer, and the annealing time is 1-3 minutes.
In the invention, the gallium nitride epitaxial layer comprises the gallium nitride buffer layer in the step 5 and the gallium nitride channel layer in the step 7, and the total thickness of the gallium nitride is 150-400 nm. The gallium nitride buffer layer mainly plays a role in dislocation regulation, and the gallium nitride channel layer mainly plays a role in providing carriers to ensure electrical performance.
Besides the common silicon carbide single crystal substrate, the method is also suitable for silicon, sapphire (including patterned substrates), gallium nitride and other epitaxial structures of various gallium nitride devices which are suitable for growing gallium nitride substrates, and is also suitable for preparing thick-layer gallium nitride and other nitride materials with high crystal quality. In addition to the metalorganic chemical vapor deposition (MOCVD) method, the method is also applicable to Molecular Beam Epitaxy (MBE) and other nitride epitaxial growth methods.
The embodiment is as follows:
the epitaxial method for reducing the interface thermal resistance of the gallium nitride field effect transistor in an MOCVD (metal organic chemical vapor deposition) system comprises the following steps:
the method comprises the following steps: a4-inch silicon carbide single crystal substrate was selected and placed on a susceptor in an MOCVD apparatus.
Step two: setting the pressure in the reaction chamber at 150mbar, H2The flow rate is 100 slm, the temperature of the system is raised to 1080 ℃ and kept for 5 minutes, and the surface of the substrate is cleaned at high temperature.
Step three: maintaining the pressure in the reaction chamber and H2The flow is not changed, the temperature is continuously increased to 1150 ℃, and NH with the flow of 10slm is introduced3And trimethylaluminum at a flow rate of 100 sccm, which was turned off after growing an aluminum nitride nucleation layer having a thickness of 60 nm.
Step four: maintenance of H2Flow rate and NH3The flow is not changed, the temperature is reduced to 1050 ℃, the pressure is increased to 200 mbar, and NH is closed after the airflow is stable3Introducing a trimethyl gallium source to carry out surface infiltration treatment, closing trimethyl gallium after the time reaches 1 minute, and simultaneously opening NH3。
Step five: maintenance of H2Flow rate, reaction chamber temperature and pressure are unchanged, NH is added3The flow rate is increased to 30slm, and NH is carried out after the airflow is stabilized3Introducing a trimethyl gallium source in the atmosphere, growing a gallium nitride buffer layer with the thickness of 60nm, and closing trimethyl gallium.
Step six: maintaining the pressure of the reaction chamber H2Flow rate and NH3The flow is not changed, the temperature of the reaction chamber is increased to 1100 ℃, high-temperature annealing treatment is carried out, and the temperature is reduced after the time reaches 2 minutesThe temperature is increased to 1070 ℃.
Step seven: maintaining the pressure of the reaction chamber H2Flow rate and NH3And (3) opening the trimethyl gallium source with constant flow, growing a gallium nitride channel layer with the thickness of 200 nm, and closing trimethyl gallium.
Step eight: maintaining the pressure of the reaction chamber H2At constant flow rate, NH3The flow rate is reduced to 10slm, the temperature of the reaction chamber is reduced to 1030 ℃, and an aluminum nitride insertion layer with the thickness of 1nm and aluminum gallium nitride Al with the thickness of 25nm are grown in sequence0.25Ga0.75An N barrier layer and a gallium nitride cap layer with the thickness of 2 nm;
step nine: after the epitaxial growth is completed, the growth source is turned off at NH3And cooling in the atmosphere, and finally taking out the gallium nitride epitaxial wafer.
In the embodiment provided by the invention, the cross-sectional quality of the gallium nitride field effect transistor adopting the gallium nitride composite buffer layer is shown in fig. 2, the total thickness of the gallium nitride composite buffer layer and the gallium nitride channel layer is 265nm, and obvious dislocation is not found through transmission electron microscope test. Further amplifying the test times, there is still a lower density of dislocations at the aluminum nitride and gallium nitride interface, which are generally annihilated within 60nm of the upward extension as in (a) of fig. 3, or diverted as in (b) of fig. 3, thereby significantly reducing the potential for dislocations to penetrate to the gallium nitride channel layer. The introduction of the gallium nitride composite buffer layer can reduce the generation of interface dislocation and promote the rapid annihilation of the dislocation, so that the ultrathin gallium nitride field effect transistor adopting the technology has extremely high crystal quality and reaches the quality level of the conventional gallium nitride field effect transistor with the thickness of 2 mu m.
In order to further analyze the effect of the gallium nitride composite buffer layer on improving the crystal quality, the X-ray high-resolution diffraction rocking curves of the ultrathin gallium nitride field effect tube epitaxial material with or without the gallium nitride composite buffer layer were respectively tested, and the test results are shown in fig. 4. Compared with the gallium nitride effect tube epitaxial material without the gallium nitride composite buffer layer shown in (b) of fig. 4, the gallium nitride effect tube epitaxial material with the gallium nitride composite buffer layer shown in (a) of fig. 4 has obvious diffraction oscillation peak type and higher intensity, further illustrates that the material has a clearer interface of aluminum nitride and gallium nitride, the full widths at half maximum of the (002) and (102) plane X-ray rocking curves of the material corresponding to the gallium nitride layer are respectively 100 and 240 arcsec, and the full widths at half maximum of the (002) and (102) plane X-ray rocking curves of the gallium nitride effect tube without the gallium nitride composite buffer layer are respectively 300 and 500 arcsec. Therefore, the pretreatment of the gallium nitride composite buffer layer at the early stage can effectively improve the interface of aluminum nitride and gallium nitride, and the interface can be clearly inhibited from generating interface dislocation, so that the crystal quality of the gallium nitride field effect transistor is greatly improved.
Compared with the conventional 2-micron gallium nitride field effect transistor, the thickness of the epitaxial layer of gallium nitride is 80%, and under the condition that the total thickness of the gallium nitride field effect transistor is reduced to 350nm, the introduction of the gallium nitride composite buffer layer can inhibit the generation of interface dislocation and promote the rapid annihilation of threading dislocation in a mode of regulating and controlling the quality of each epitaxial layer interface, so that the dislocation density of gallium nitride is greatly reduced. The epitaxial method of the gallium nitride field effect transistor provided by the invention can effectively improve the crystal quality.
The above embodiments are only for illustrating the technical solutions of the present invention and not for limiting the same, and many practical manufacturing solutions can be adopted in the manufacturing method, and all equivalent changes and decorations made according to the claims of the present invention are within the scope of the present invention.
Claims (3)
1. An epitaxial method for improving the quality of an ultrathin gallium nitride field effect transistor is characterized by comprising the following steps:
the method comprises the following steps: selecting a silicon carbide single crystal substrate, and placing the silicon carbide single crystal substrate on a reaction chamber base in metal organic chemical vapor deposition material growth equipment;
step two: setting the pressure of a reaction chamber to be 100-200 mbar, and introducing H2The temperature of the system is raised to 1000-1100 ℃ under H2Baking the substrate for 5-15 minutes in the atmosphere to remove the sticky dirt on the surface of the substrate;
step three: maintenance of H2The flow is not changed, the pressure in the reaction chamber is reduced to 50-150 mbar, the temperature is continuously raised to 1100-1200 ℃, and NH is introduced3And an aluminum source, and growing an aluminum nitride nucleation layer with the thickness of 20-60 nm;
step four: retention of H2The flow rate is not changed, and the flow rate is not changed,at NH3Reducing the temperature to 1000-1100 ℃ in the atmosphere, increasing the pressure to 150-350 mbar, and closing NH after the airflow is stable3Introducing a gallium source to perform surface infiltration treatment for 0.3-2 minutes;
step five: after the infiltration is complete, the NH is opened3Growing a gallium nitride buffer layer with the thickness of 20-80 nm, and closing a gallium source;
step six: maintaining the pressure of the reaction chamber H2Flow rate and NH3The flow is unchanged, the temperature is increased by 50-100 ℃, and high-temperature annealing treatment is carried out for 1-3 minutes;
step seven: after the annealing is finished, the pressure and H of the reaction chamber are maintained2Flow rate and NH3The flow is unchanged, and the temperature is reduced to 1000-1100 ℃; opening a gallium source, growing a gallium nitride channel layer, and closing the gallium source after the total thickness of gallium nitride reaches 150-400 nm;
step eight: growing an aluminum nitride insertion layer with a thickness of 0.5-2 nm and an aluminum gallium nitride Al with a thickness of 5-30 nmxGa1-xAn N barrier layer and a gallium nitride cap layer with the thickness of 1-5 nm;
step nine: after the epitaxial growth is completed, the growth source is turned off at NH3And (5) reducing the temperature in the atmosphere.
2. The epitaxial method of claim 1 wherein the gan epitaxial layer comprises the gan buffer layer in step five and the gan channel layer in step seven, and has a total thickness of 150-400 nm.
3. The epitaxial method for improving the quality of ultra-thin GaN field effect transistor crystals as claimed in claim 1, wherein the GaN buffer layer of step V is subjected to metal source pretreatment and high temperature annealing recrystallization before and after growth.
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| CN102719887A (en) * | 2012-06-13 | 2012-10-10 | 中国电子科技集团公司第五十五研究所 | Method for growing high-quality gallium nitride epitaxial film on basis of gallium nitride substrate |
| CN105006427A (en) * | 2015-08-04 | 2015-10-28 | 中国电子科技集团公司第十三研究所 | Method for growing high-quality gallium nitride epitaxial structure by using low-temperature transition layer |
| CN111681953A (en) * | 2020-05-20 | 2020-09-18 | 中国电子科技集团公司第五十五研究所 | Growth method for improving interface quality of gallium nitride heteroepitaxy |
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| JP2010215501A (en) * | 2010-04-30 | 2010-09-30 | Sumitomo Electric Ind Ltd | Method for growing gallium nitride crystal, gallium nitride crystal substrate, method for producing epitaxial wafer, and epitaxial wafer |
| CN102719887A (en) * | 2012-06-13 | 2012-10-10 | 中国电子科技集团公司第五十五研究所 | Method for growing high-quality gallium nitride epitaxial film on basis of gallium nitride substrate |
| CN105006427A (en) * | 2015-08-04 | 2015-10-28 | 中国电子科技集团公司第十三研究所 | Method for growing high-quality gallium nitride epitaxial structure by using low-temperature transition layer |
| CN111681953A (en) * | 2020-05-20 | 2020-09-18 | 中国电子科技集团公司第五十五研究所 | Growth method for improving interface quality of gallium nitride heteroepitaxy |
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