CN117080328B - Ultraviolet LED epitaxial wafer, preparation method thereof and LED chip - Google Patents
Ultraviolet LED epitaxial wafer, preparation method thereof and LED chip Download PDFInfo
- Publication number
- CN117080328B CN117080328B CN202311317237.8A CN202311317237A CN117080328B CN 117080328 B CN117080328 B CN 117080328B CN 202311317237 A CN202311317237 A CN 202311317237A CN 117080328 B CN117080328 B CN 117080328B
- Authority
- CN
- China
- Prior art keywords
- component
- layer
- quantum well
- epitaxial wafer
- quantum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002360 preparation method Methods 0.000 title abstract description 12
- 230000004888 barrier function Effects 0.000 claims abstract description 62
- 238000000034 method Methods 0.000 claims abstract description 62
- 230000008569 process Effects 0.000 claims abstract description 45
- 230000008859 change Effects 0.000 claims abstract description 44
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 18
- 230000007423 decrease Effects 0.000 claims abstract description 15
- 230000000087 stabilizing effect Effects 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims description 57
- 239000000758 substrate Substances 0.000 claims description 35
- 230000000903 blocking effect Effects 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 5
- 230000001276 controlling effect Effects 0.000 abstract description 20
- 230000010287 polarization Effects 0.000 abstract description 14
- 230000000694 effects Effects 0.000 abstract description 6
- 230000005684 electric field Effects 0.000 abstract description 3
- 230000001105 regulatory effect Effects 0.000 abstract description 3
- 230000002441 reversible effect Effects 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 32
- 239000002019 doping agent Substances 0.000 description 13
- 239000011777 magnesium Substances 0.000 description 12
- 239000013078 crystal Substances 0.000 description 7
- 230000003247 decreasing effect Effects 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000004094 surface-active agent Substances 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000005701 quantum confined stark effect Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 230000005428 wave function Effects 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Abstract
The invention provides an ultraviolet LED epitaxial wafer, a preparation method thereof and an LED chip, wherein a quantum well layer and a quantum barrier layer which are periodically and alternately grown are arranged, the quantum well layer and the quantum barrier layer are all AlGaN layers, and the Al component is controlled to change in three stages in the process of growing the quantum well layer; a first stage of controlling the Al component to gradually decrease from the initial component to a first component; controlling the Al component to have at least one change period, wherein one change period is gradually increased from the first component to the second component, and gradually reduced to the first component after stabilizing for a preset time; and in the third stage, the Al component is controlled to be gradually increased from the first component to the initial component, and specifically, the novel quantum well structure is introduced, so that the effect of limiting electron overflow can be improved, the polarization field of the well barrier can be regulated and controlled, the reverse polarization electric field in the original quantum well can be compensated to a certain extent, and finally, the aim of improving the internal quantum efficiency is achieved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to an ultraviolet LED epitaxial wafer, a preparation method thereof and an LED chip.
Background
Ultraviolet LEDs (UV LEDs) are mainly used in biomedical, anti-counterfeit, purification (water, air, etc.), computer data storage, military, etc.
The development of ultraviolet LEDs has faced a number of unique technical difficulties compared to GaN-based blue LEDs, such as: epitaxial growth of high Al composition AlGaN material is difficult, and in general, the higher the Al composition is, the lower the crystal quality is, and the dislocation density is generally 10 9 ~10 10 /cm 2 Or even higher; alGaN materials are much more difficult to dope than GaN, either n-doped or p-dopedDoping, with an increase in Al composition, the conductivity of the epitaxial layer rapidly decreases, especially the doping of p-AlGaN is particularly troublesome, the activation efficiency of Mg dopant is low, resulting in insufficient holes, sharp decrease in conductivity and luminous efficiency, and the like.
Due to the above-mentioned situation, the internal quantum efficiency of the existing uv LED epitaxial wafer is not high, and in the prior art, in order to improve the internal quantum efficiency of the uv LED epitaxial wafer, a method is generally adopted to reduce the Al component of the electron blocking layer and improve the doping concentration of Mg, thereby improving the hole concentration, but in this way, the electron overflow phenomenon is aggravated, and the aging performance is also worsened.
Disclosure of Invention
Based on the above, the invention aims to provide an ultraviolet LED epitaxial wafer, a preparation method thereof and an LED chip, and aims to introduce a novel quantum well structure into the ultraviolet LED epitaxial wafer so as to improve internal quantum efficiency.
According to the ultraviolet LED epitaxial wafer, the ultraviolet LED epitaxial wafer comprises an active layer, wherein the active layer comprises a quantum well layer and a quantum barrier layer which are periodically and alternately grown, the quantum well layer and the quantum barrier layer are all AlGaN layers, and in the process of growing the quantum well layer, al components are controlled to change in three stages;
a first stage of controlling the Al component to gradually decrease from the initial component to a first component;
controlling the Al component to have at least one change period, wherein one change period is gradually increased from the first component to the second component, and gradually reduced to the first component after stabilizing for a first preset time;
and a third stage of controlling the Al component to be gradually increased from the first component to the initial component.
Further, the ultraviolet LED epitaxial wafer further comprises a substrate, an AlN layer, an N-type semiconductor layer, an EBL electron blocking layer and a P-type semiconductor layer;
and sequentially depositing the AlN layer, the N-type semiconductor layer, the active layer, the EBL electron blocking layer and the P-type semiconductor layer on the substrate along the epitaxial growth direction.
Further, the second component is smaller than the initial component.
Further, in the process of gradually increasing the first component to the second component, the Al component is controlled to gradually increase from the first component to the third component, and after the second preset time is stabilized, the Al component is gradually increased to the second component.
Further, in any one of the variation cycles of the second stage, the rate of the Al composition increasing process is greater than the rate of the Al composition decreasing process.
Further, in any one of the variation cycles of the second stage, the thickness of the quantum well layer grown in the process of stepwise increasing from the first component to the second component is smaller than the thickness grown in the process of gradually decreasing from the second component to the first component.
Further, the initial components are 48% -52%, the first components are 28% -32%, the second components are 43% -47%, and the third components are 33% -37%.
Further, the thickness of the quantum well layer is 1 nm-3 nm, and the thickness of the quantum barrier layer is 10 nm-14 nm.
According to the preparation method of the ultraviolet LED epitaxial wafer, which is provided by the embodiment of the invention, the preparation method is used for preparing the ultraviolet LED epitaxial wafer and comprises the following steps:
the method comprises the steps of growing an active layer, wherein the active layer comprises a quantum well layer and a quantum barrier layer which are periodically and alternately grown, the quantum well layer and the quantum barrier layer are all AlGaN layers, and in the process of growing the quantum well layer, al components are controlled to change in three stages;
a first stage of controlling the Al component to gradually decrease from the initial component to a first component;
controlling the Al component to have at least one change period, wherein one change period is gradually increased from the first component to the second component, and gradually reduced to the first component after stabilizing for a first preset time;
and a third stage of controlling the Al component to be gradually increased from the first component to the initial component.
According to the embodiment of the invention, the LED chip comprises the ultraviolet LED epitaxial wafer.
The beneficial effects of the invention are as follows:
the method comprises the steps of setting a quantum well layer and a quantum barrier layer which are periodically and alternately grown, wherein the quantum well layer and the quantum barrier layer are all AlGaN layers, and controlling Al components to change in three stages in the process of growing the quantum well layer; a first stage of controlling the Al component to gradually decrease from the initial component to a first component; controlling the Al component to have at least one change period, wherein one change period is gradually increased from the first component to the second component, and gradually reduced to the first component after stabilizing for a preset time; and in the third stage, the Al component is controlled to be gradually increased from the first component to the initial component, specifically, due to the fact that a novel quantum well structure is introduced, the effect of limiting electron overflow can be improved, meanwhile, the polarization field of a well barrier can be regulated and controlled, the reverse polarization electric field in the original quantum well can be compensated to a certain extent, the QCSE effect caused by spontaneous polarization and piezoelectric polarization of the material is reduced, the wave function overlapping rate of electrons and holes in the quantum well is improved, and therefore the purpose of improving internal quantum efficiency is achieved.
Drawings
Fig. 1 is a schematic structural diagram of an ultraviolet LED epitaxial wafer according to an embodiment of the present invention;
fig. 2 is a flowchart of a method for preparing an ultraviolet LED epitaxial wafer according to an embodiment of the present invention;
fig. 3 is a schematic energy band diagram of an active layer according to an embodiment of the present invention.
Detailed Description
In order that the invention may be readily understood, a more complete description of the invention will be rendered by reference to the appended drawings. Several embodiments of the invention are presented in the figures. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "mounted" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like are used herein for illustrative purposes only.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
Referring to fig. 1, a schematic structural diagram of an ultraviolet LED epitaxial wafer according to an embodiment of the present invention is provided, where the ultraviolet LED epitaxial wafer includes a substrate 1, and an AlN layer 2, an N-type semiconductor layer 3, an active layer 4, an EBL electron blocking layer 5, and a P-type semiconductor layer 6 sequentially disposed on the substrate 1.
In the present embodiment, the substrate 1 may be a sapphire substrate, a SiC substrate, a Si-based substrate, a GaN substrate, or the like, specifically, the thickness of the AlN layer 2 is 1 μm to 2 μm, and the thickness of the AlN layer 2 is 1 μm, 1.2 μm, 1.5 μm, 1.8 μm, or 2 μm, or the like, by way of example, but is not limited thereto; the N-type semiconductor layer 3 is N-type doped Al x Ga 1-x N layer, the dopant of the N-type semiconductor layer 3 may be Si, and the doping concentration of the N-type semiconductor layer 3 may be 5E18atoms/cm as an electron supply layer 3 ~1E20 atoms/cm 3 The Al component is 40% -60%, the thickness of the N-type semiconductor layer 3 is 1 μm to 3 μm, and the thickness of the N-type semiconductor layer 3 is 1 μm, 1.5 μm, 2 μm, 2.5 μm, or 3 μm, etc., by way of example, but not limited thereto; the active layer 4 comprises a quantum well layer and a quantum barrier layer which are periodically and alternately grown, wherein the quantum well layer and the quantum barrier layer are all AlGaN layers, the growth period of the quantum well layer and the quantum barrier layer in the active layer 4 is 3-5, the thickness of the quantum well layer is 1-3 nm, and the thickness of the quantum well layer is 1nm, 1.5 nm, 2nm, 2.5 nm or 3nm and the like by way of example,but is not limited thereto; the thickness of the quantum barrier layer is 10nm to 14nm, and exemplary, but not limited to, the thickness of the quantum barrier layer is 10nm, 11 nm, 12nm, 13nm or 14 nm; the thickness of the EBL electron blocking layer 5 is 20nm to 30nm, and in the EBL electron blocking layer 5, the Al composition is 60% to 70%, and exemplary, the thickness of the EBL electron blocking layer 5 is 20nm, 22 nm, 25nm, 28nm or 30nm, etc., but not limited thereto; the P-type semiconductor layer 6 is P-type doped Al z Ga 1-z The doping agent of the N layer and the P type semiconductor layer 6 can be Mg, the Al component is 20% -40%, and the doping concentration of the Mg can be 5E18atoms/cm 3 ~5E19 atoms/cm 3 The thickness of the P-type semiconductor layer 6 is 150nm to 250nm, and exemplary thicknesses of the P-type semiconductor layer 6 are 150nm, 180 nm, 200nm, 220nm, 250nm, or the like, but are not limited thereto.
In the process of growing the quantum well layer, the Al component is controlled to change in three stages;
a first stage of controlling the Al component to gradually decrease from the initial component to a first component;
in the second stage, controlling the Al component to have at least one change period, wherein one change period is gradually reduced to the first component after the first component is gradually increased to the second component from the first component, and after the first component is stabilized for a first preset time, it can be understood that when three change periods exist in the Al component in the second stage, the Al component is gradually reduced to the first component after the first component is gradually increased to the second component, the first component is gradually increased to the second component after the first component is stabilized for a preset time, the first component is gradually reduced to the first component after the first component is finally gradually increased to the second component, and the first component is gradually reduced to the first component after the first component is stabilized for a preset time, so that the control of three change periods is completed, namely the distribution condition of the Al component of the whole quantum well layer is in a zigzag shape;
it should be noted that, because the active layer 4 is a periodically and alternately grown quantum well layer and quantum barrier layer, and both the quantum well layer and the quantum barrier layer are AlGaN layers, the Al component in the quantum well layer affects the light emitting wavelength of the epitaxial wafer, the Al component of the quantum well layer is lower than the Al component of the quantum barrier layer, the energy band of the quantum barrier layer is higher than that of the quantum well layer, the influence of the Al component on the light emitting wavelength of the epitaxial wafer can be effectively reduced, therefore, the second component is smaller than the initial component, in the process of gradually increasing the Al component from the first component to the second component, the Al component is controlled to gradually increase from the first component to the third component, after stabilizing the second preset time, and meanwhile, in any one change period of the second stage, the rate of the Al component in the process of increasing the Al component is larger than the rate of the Al component in the process of decreasing the Al component, and further, in any change period of the second stage, the thickness of the quantum well layer in the process of gradually increasing from the first component to the second component is smaller than the thickness of the second component in the process of gradually increasing from the first component to the second component, and the electron polarization can be greatly limited by the electron polarization and the electron polarization between the quantum well layer and the electron polarization can be greatly improved;
in the third stage, the Al component is controlled to be gradually increased from the first component to the initial component.
In the present embodiment, the initial components are 48% -52%, and exemplary, but not limited to, 48%, 49%, 50%, 51% or 52% and the like; the first component is 28% -32%, and exemplary, the first component is 28%, 29%, 30%, 31% or 32%, etc., but not limited thereto; the second component is 43% -47%, and exemplary, but not limited to, 43%, 44%, 45%, 46% or 47%; the third component is 33% -37%, and exemplary, but not limited to, 33%, 34%, 35%, 36% or 37% and the like.
Correspondingly, referring to fig. 2, the embodiment of the invention also provides a preparation method of the ultraviolet LED epitaxial wafer, which is used for preparing the ultraviolet LED epitaxial wafer, and specifically comprises the following steps:
s100: providing a substrate;
preferably, the selected substrate may be a silicon substrate, a sapphire substrate, a silicon carbide substrate or a GaN substrate, and in this embodiment, the substrate is a Si-based substrate, which has advantages of good thermal conductivity, low cost, mature process, easy peeling, and the like.
S200: sequentially depositing an AlN layer, an N-type semiconductor layer, an active layer, an EBL electron blocking layer and a P-type semiconductor layer on a substrate along the epitaxial growth direction;
specifically, S200 includes:
s201: growing an AlN layer on a Si-based substrate;
wherein, depositing AlN layer by MOCVD (Metal-organic Chemical Vapor Deposition, metal organic chemical vapor deposition) method, specifically, placing Si-based substrate into MOCVD reaction chamber, introducing TMAL and NH into the reaction chamber 3 The AlN layer is prepared by a chemical vapor deposition method, in the process of preparing the AlN layer, the temperature in an MOCVD reaction cavity is controlled to be 1200-1300 ℃, the pressure is 50-100 mbar, ammonia gas is intermittently introduced into the reaction cavity after 30s and 10s are opened, and the thickness of the grown AlN layer is 1-2 mu m.
The purpose of growing the AlN layer at high temperature is mainly to release lattice mismatch and thermal mismatch of the substrate and AlGaN material. When an AlN layer is prepared by a common growth method, cracks appear. Thus, in the present embodiment, the AlN layer employs NH in a low-pressure high-temperature environment 3 Pulsed-on preparation, i.e. continuous-on MO source (TMAL source and TMGa source), but NH 3 The AlN layer with better crystal quality can be obtained by intermittently introducing the AlN into the reaction chamber in a pulse mode.
S202: growing an N-type semiconductor layer on the AlN layer;
specifically, an N-type semiconductor layer is grown in MOCVD equipment, wherein the N-type semiconductor layer is N-type doped Al x Ga 1-x The N layer, the dopant of the N-type semiconductor layer may be Si, and the doping concentration of the N-type semiconductor layer may be 5E18atoms/cm as the electron supply layer 3 ~1E20 atoms/cm 3 The Al component is 40% -60%, the thickness of the N-type semiconductor layer is controlled to be 1-3 mu m, specifically, the temperature in the MOCVD reaction cavity is controlled to be 1000-1200 ℃, and the pressure is controlled to be 50-150 mbar.
S203: growing an active layer on the N-type semiconductor layer;
specifically, an active layer is grown in MOCVD equipment, the active layer comprises a quantum well layer and a quantum barrier layer which are periodically and alternately grown, wherein the quantum well layer and the quantum barrier layer are all AlGaN layers, the growth period of the quantum well layer and the quantum barrier layer in the active layer is 3-5, the thickness of the quantum well layer is 1-3 nm, the thickness of the quantum barrier layer is 10-14 nm, and the temperature in an MOCVD reaction cavity is controlled to be 1000-1200 ℃ and the pressure is 50-150 mbar.
In the present embodiment, during the process of growing the quantum well layer, the Al composition is controlled to undergo three-stage changes;
a first stage of controlling the Al component to gradually decrease from the initial component to a first component;
the second stage, controlling Al component to have at least one change period, wherein one change period is gradually reduced to the first component after the first component is gradually increased to the second component from the first component, and stabilizing for a first preset time, and it can be understood that when the Al component in the second stage has three change periods, the Al component gradually reduced to the first component after the first preset time is stabilized, the Al component gradually reduced to the first component after the first component is gradually increased to the second component, the Al component gradually reduced to the first component after the first preset time is stabilized, and finally the Al component gradually reduced to the first component after the first preset time is stabilized, so that the control of three change periods is completed, namely the Al component distribution condition of the whole quantum well layer is zigzag;
it should be noted that, because the active layer is a periodically alternately grown quantum well layer and quantum barrier layer, and both the quantum well layer and the quantum barrier layer are AlGaN layers, the Al component in the quantum well layer affects the light emitting wavelength of the epitaxial wafer, the Al component of the quantum well layer is lower than the Al component of the quantum barrier layer, the energy band of the quantum barrier layer is higher than that of the quantum well layer, the influence of the Al component on the light emitting wavelength of the epitaxial wafer can be effectively reduced, therefore, the second component is smaller than the initial component, in the process of gradually increasing the Al component from the first component to the second component, the Al component is controlled to gradually increase from the first component to the third component, after stabilizing the second preset time, and meanwhile, in any one change period of the second stage, the rate of the Al component in the process of increasing the Al component is larger than the rate of the Al component in the process of decreasing the Al component, and further, in any change period of the second stage, the thickness of growing from the first component to the second component in the process of growing from the quantum well layer is smaller than that the second component in the process of gradually decreasing the thickness from the first component to the second component, and the electron field can be greatly restricted by the electron field between the quantum well layer and the electron gap, and the electron gap can be greatly restricted;
in the third stage, the Al component is controlled to be gradually increased from the first component to the initial component.
It can be understood that the actual growth process may be that a quantum barrier layer is grown first, the Al component of the quantum barrier layer is 48% -52%, that is, the initial component, after the growth of the quantum barrier layer is finished, a quantum well layer starts to grow, wherein the Al component is controlled to gradually increase from 48% -52% to 28% -32% in the time of 4 s-6 s, that is, the first component, then gradually increase from 1 s-3 s to 33% -37%, that is, the third component, and keep 7 s-9 s, then increase to 43% -47%, that is, the second component, and keep 1 s-3 s, then decrease again to 28% -32%, that is, if the period of change of the Al component is two periods, then gradually decrease to the second component, after the period of change is finished, that is, the second phase is finished, the Al component is controlled to gradually increase from 28% -32%, that is, the first component gradually increases from 1s to 33% -37%, and keeps the time of the first component, that is, and then the quantum well layer is grown from 1% -3 s to 3%, that is, the period of time of the first component is, and the first component is kept to 3 s-3 s, and the quantum well layer is grown after the period of time of the first component is up to 48% -3 s, that is kept. Referring to fig. 3, an energy band diagram of an active layer according to an embodiment of the present invention is shown, wherein three variation periods are set for the Al composition during the second phase of the growth process of the quantum well layer.
In addition, the doping concentration of the quantum barrier layer is 5E18atoms/cm 3 The main purpose is to reduce series resistance and working voltage, at the same time, the quantum well layer is introduced with TMIN during the growth process, which can be used as a surfactant to increase migration of Al, and at the same time, the quantum barrier layer can also play a role in improving crystal quality, the flow rate of TMIN is 50 sccm-100 sccm, and TMIN can be used as a surfactant,the crystal quality is improved, the well barrier interface is clearer, and the defects are fewer.
S204: growing an EBL electron blocking layer on the active layer;
specifically, an EBL electron blocking layer grows in MOCVD equipment, the thickness of the deposited EBL electron blocking layer is controlled to be 20-30 nm, the Al component is controlled to be 60-70%, wherein the temperature in the MOCVD equipment is controlled to be 1000-1200 ℃, and the pressure is controlled to be 50-150 mbar.
S205: growing a P-type semiconductor layer on the EBL electron blocking layer;
specifically, growing a P-type semiconductor layer in MOCVD equipment, and controlling the thickness of the deposited P-type semiconductor layer to be 150-250 nm, wherein the P-type semiconductor layer is P-type doped Al z Ga 1-z The doping agent of the N layer and the P type semiconductor layer can be Mg, the Al component is 20% -40%, and the doping concentration of the Mg can be 5E18atoms/cm 3 ~5E19 atoms/cm 3 The temperature in the MOCVD equipment is controlled to be 1000-1100 ℃ and the air pressure is controlled to be 50-200 mbar.
When the embodiment is realized, trimethylgallium is used as a gallium source, high-purity ammonia gas is used as a nitrogen source, and high-purity H 2 As carrier gas, trimethylaluminum is used as aluminum source, silane is used as N-type dopant, and magnesium is used as P-type dopant.
The invention is further illustrated by the following examples:
example 1
The embodiment provides an ultraviolet LED epitaxial wafer, which comprises a substrate, an AlN layer, an N-type semiconductor layer, an active layer, an EBL electron blocking layer and a P-type semiconductor layer, wherein the AlN layer, the N-type semiconductor layer, the active layer, the EBL electron blocking layer and the P-type semiconductor layer are sequentially arranged on the substrate.
In the present embodiment, the substrate is a Si-based substrate, specifically, the AlN layer has a thickness of 1.5 μm and the N-type semiconductor layer is N-type doped Al x Ga 1-x An N layer, the dopant of the N-type semiconductor layer may be Si, and the doping concentration of the N-type semiconductor layer may be 1E19 atoms/cm as the electron supply layer 3 The Al component is 50%, the thickness of the N-type semiconductor layer is 2 μm, the active layer comprises a quantum well layer and a quantum barrier layer which are periodically and alternately grown, wherein the quantum well layer and the quantum barrier layer are all AlGaN layers,the growth period of the quantum well layer and the quantum barrier layer in the active layer is 3, the thickness of the quantum well layer is 2nm, the thickness of the quantum barrier layer is 12nm, the thickness of the EBL electron blocking layer is 25nm, in the EBL electron blocking layer, the Al component is 65%, and the P-type semiconductor layer is P-type doped Al z Ga 1-z The dopant of the N layer and the P type semiconductor layer can be Mg, the Al component is 30 percent, and the doping concentration of the Mg can be 5E19 atoms/cm 3 The thickness of the P-type semiconductor layer was 200nm.
The preparation method of the ultraviolet LED epitaxial wafer in the embodiment comprises the following steps:
(1) Providing a substrate;
preferably, the selected substrate may be a silicon substrate, a sapphire substrate, a silicon carbide substrate or a GaN substrate, and in this embodiment, the substrate is a Si-based substrate, which has advantages of good thermal conductivity, low cost, mature process, easy peeling, and the like.
(2) Growing an AlN layer on the substrate;
wherein, depositing AlN layer by MOCVD (Metal-organic Chemical Vapor Deposition, metal organic chemical vapor deposition) method, specifically, placing Si-based substrate into MOCVD reaction chamber, introducing TMAL and NH into the reaction chamber 3 The AlN layer is prepared by a chemical vapor deposition method, in the process of preparing the AlN layer, the temperature in the MOCVD reaction cavity is controlled to be 1250 ℃, the pressure is 50mbar, ammonia gas is intermittently introduced into the reaction cavity for 30 seconds and 10 seconds, and the thickness of the grown AlN layer is 1.5 mu m.
The purpose of growing the AlN layer at high temperature is mainly to release lattice mismatch and thermal mismatch of the substrate and AlGaN material. When an AlN layer is prepared by a common growth method, cracks appear. Thus, in the present embodiment, the AlN layer employs NH in a low-pressure high-temperature environment 3 Pulsed-on preparation, i.e. continuous-on MO source (TMAL source and TMGa source), but NH 3 The AlN layer with better crystal quality can be obtained by intermittently introducing the AlN into the reaction chamber in a pulse mode.
(3) Growing an N-type semiconductor layer on the AlN layer;
specifically, an N-type semiconductor layer is grown in an MOCVD apparatus, in which the N-type semiconductor layer is formedThe conductor layer is N-doped Al x Ga 1-x An N layer, the dopant of the N-type semiconductor layer may be Si, and the doping concentration of the N-type semiconductor layer may be 1E19 atoms/cm as the electron supply layer 3 The Al component was 50%, the thickness of the N-type semiconductor layer was controlled to 2. Mu.m, specifically, the temperature in the MOCVD reaction chamber was controlled to 1100℃and the pressure was controlled to 100mbar.
(4) Growing an active layer on the N-type semiconductor layer;
specifically, an active layer is grown in MOCVD equipment, the active layer comprises a quantum well layer and a quantum barrier layer which are periodically and alternately grown, wherein the quantum well layer and the quantum barrier layer are all AlGaN layers, the growth period of the quantum well layer and the quantum barrier layer in the active layer is 3, the thickness of the quantum well layer is 2nm, the thickness of the quantum barrier layer is 12nm, the temperature in an MOCVD reaction cavity is controlled to be 1080 ℃, and the pressure is 50mbar.
In the present embodiment, during the process of growing the quantum well layer, the Al composition is controlled to undergo three-stage changes;
a first stage of controlling the Al component to gradually decrease from the initial component to a first component;
the second stage, controlling Al component to have at least one change period, wherein one change period is gradually reduced to the first component after the first component is gradually increased to the second component from the first component, and stabilizing for a first preset time, and it can be understood that when the Al component in the second stage has three change periods, the Al component gradually reduced to the first component after the first preset time is stabilized, the Al component gradually reduced to the first component after the first component is gradually increased to the second component, the Al component gradually reduced to the first component after the first preset time is stabilized, and finally the Al component gradually reduced to the first component after the first preset time is stabilized, so that the control of three change periods is completed, namely the Al component distribution condition of the whole quantum well layer is zigzag;
it should be noted that, because the active layer is a periodically alternately grown quantum well layer and quantum barrier layer, and both the quantum well layer and the quantum barrier layer are AlGaN layers, the Al component in the quantum well layer affects the light emitting wavelength of the epitaxial wafer, the Al component of the quantum well layer is lower than the Al component of the quantum barrier layer, the energy band of the quantum barrier layer is higher than that of the quantum well layer, the influence of the Al component on the light emitting wavelength of the epitaxial wafer can be effectively reduced, therefore, the second component is smaller than the initial component, in the process of gradually increasing the Al component from the first component to the second component, the Al component is controlled to gradually increase from the first component to the third component, after stabilizing the second preset time, and meanwhile, in any one change period of the second stage, the rate of the Al component in the process of increasing the Al component is larger than the rate of the Al component in the process of decreasing the Al component, and further, in any change period of the second stage, the thickness of growing from the first component to the second component in the process of growing from the quantum well layer is smaller than that the second component in the process of gradually decreasing the thickness from the first component to the second component, and the electron field can be greatly restricted by the electron field between the quantum well layer and the electron gap, and the electron gap can be greatly restricted;
in the third stage, the Al component is controlled to be gradually increased from the first component to the initial component.
In this embodiment, three change periods are set in the second stage, and the actual growth process may be that a quantum barrier layer is grown first, the Al composition of the quantum barrier layer is 50%, after the growth of the quantum barrier layer is finished, a quantum well layer starts to grow, wherein the Al composition is controlled to be gradually changed from 50% to 30% in 5s, then gradually changed to 35% in 2s, and then kept for 8s, then increased to 45% and kept for 2s, then reduced to 30% again, and then repeated twice, the process that the Al composition is gradually increased to 45% from 30% in stages, after the preset time is stabilized, then gradually reduced to 30% is repeated, and when the change period is finished, i.e. the second stage is finished, the Al composition is controlled to be gradually changed from 30% to 35% in 1 s-3 s, and kept for 10s, then increased to 50%, and the growth of the quantum well layer and the quantum barrier layer in one period in the active layer is completed in the above process, which can be understood that the growth of the quantum well layer and the quantum barrier layer in the other two periods in the active layer is also completed.
In addition, the doping concentration of the quantum barrier layer is 5E18atoms/cm 3 The main purpose is in order to reduce series resistance, reduce operating voltage, simultaneously, the quantum well layer lets in TMIN in the growth process, can regard as the surfactant, increase the migration of Al, also can play the effect of improving crystal quality simultaneously, and the flow of TMIN lets in the quantum barrier layer in the growth process is 50 sccm ~100sccm, lets in TMIN can regard as the surfactant, improves crystal quality, makes the well barrier interface clearer, the defect is less.
(5) Growing an EBL electron blocking layer on the active layer;
specifically, an EBL electron blocking layer was grown in an MOCVD apparatus, the thickness of the deposited EBL electron blocking layer was controlled to 25nm, and the Al composition was controlled to 65%, wherein the temperature in the MOCVD apparatus was controlled to 1100℃and the pressure was controlled to 100mbar.
(6) Growing a P-type semiconductor layer on the EBL electron blocking layer;
specifically, growing a P-type semiconductor layer in MOCVD equipment, wherein the thickness of the deposited P-type semiconductor layer is controlled to be 200nm, and the P-type semiconductor layer is P-type doped Al z Ga 1-z The dopant of the N layer and the P type semiconductor layer can be Mg, the Al component is 30 percent, and the doping concentration of the Mg can be 5E19 atoms/cm 3 The temperature in the MOCVD apparatus was controlled at 1000℃and the gas pressure at 100mbar.
When the embodiment is realized, trimethylgallium is used as a gallium source, high-purity ammonia gas is used as a nitrogen source, and high-purity H 2 As carrier gas, trimethylaluminum is used as aluminum source, silane is used as N-type dopant, and magnesium is used as P-type dopant.
Example 2
This example also provides an ultraviolet LED epitaxial wafer and a method for producing the same, which are different from example 1 in that the initial composition of Al composition of the quantum well layer in example 2 is 48%, the first composition is 28%, the second composition is 43%, and the third composition is 33%.
Example 3
This example also provides an ultraviolet LED epitaxial wafer and a method for producing the same, which are different from example 1 in that the initial composition of the Al composition of the quantum well layer in example 3 is 52%, the first composition is 32%, the second composition is 47%, and the third composition is 37%.
The LED chips prepared from the ultraviolet LED epitaxial wafers of examples 1 to 3 were tested under the same conditions (test current 100 mA), and specific results are as follows:
as can be seen from the table, the LED chip prepared by the ultraviolet LED epitaxial wafer obtained by the method in the embodiment of the invention has the advantage that the forward luminous brightness is effectively improved compared with the LED chip prepared by the traditional method in the comparative example under the same test condition, and meanwhile, the yield of the LED chip prepared by the method in the embodiment of the invention is better than that of the traditional method.
The embodiment of the invention also provides an LED chip, which comprises the ultraviolet LED epitaxial wafer.
In summary, according to the ultraviolet LED epitaxial wafer, the preparation method and the LED chip provided by the embodiment of the invention, the quantum well layers and the quantum barrier layers which are periodically and alternately grown are arranged, wherein the quantum well layers and the quantum barrier layers are all AlGaN layers, and the Al component is controlled to change in three stages in the process of growing the quantum well layers; a first stage of controlling the Al component to gradually decrease from the initial component to a first component; controlling the Al component to have at least one change period, wherein one change period is gradually increased from the first component to the second component, and gradually reduced to the first component after stabilizing for a preset time; and in the third stage, the Al component is controlled to be gradually increased from the first component to the initial component, specifically, due to the fact that a novel quantum well structure is introduced, the effect of limiting electron overflow can be improved, meanwhile, the polarization field of a well barrier can be regulated and controlled, the reverse polarization electric field in the original quantum well can be compensated to a certain extent, the QCSE effect caused by spontaneous polarization and piezoelectric polarization of the material is reduced, the wave function overlapping rate of electrons and holes in the quantum well is improved, and therefore the purpose of improving internal quantum efficiency is achieved.
The foregoing examples illustrate only a few embodiments of the invention and are described in detail herein without thereby limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (9)
1. The ultraviolet LED epitaxial wafer is characterized by comprising an active layer, wherein the active layer comprises a quantum well layer and a quantum barrier layer which are periodically and alternately grown, the quantum well layer and the quantum barrier layer are all AlGaN layers, and the Al component is controlled to change in three stages in the process of growing the quantum well layer;
a first stage of controlling the Al component to gradually decrease from the initial component to a first component;
controlling the Al component to have at least one change period, wherein one change period is gradually increased from the first component to the second component, and gradually reduced to the first component after stabilizing for a first preset time, and the second component is smaller than the initial component;
and a third stage of controlling the Al component to be gradually increased from the first component to the initial component.
2. The ultraviolet LED epitaxial wafer of claim 1, further comprising a substrate, an AlN layer, an N-type semiconductor layer, an EBL electron blocking layer, and a P-type semiconductor layer;
and sequentially depositing the AlN layer, the N-type semiconductor layer, the active layer, the EBL electron blocking layer and the P-type semiconductor layer on the substrate along the epitaxial growth direction.
3. The ultraviolet LED epitaxial wafer of claim 1 or 2, wherein in the process of stepwise increasing the first component to the second component, the Al component is controlled to gradually increase from the first component to the third component, and after stabilizing for a second preset time, the Al component is gradually increased to the second component.
4. A uv LED epitaxial wafer according to claim 3, wherein the rate of the Al composition increase process is greater than the rate of the Al composition decrease process during any one of the variation cycles of the second stage.
5. The uv LED epitaxial wafer of claim 4, wherein the quantum well layer grows to a thickness less than the thickness grown from the first composition to the second composition in steps during any one of the second phase variation cycles.
6. The ultraviolet LED epitaxial wafer of claim 3, wherein the initial composition is 48% -52%, the first composition is 28% -32%, the second composition is 43% -47%, and the third composition is 33% -37%.
7. The ultraviolet LED epitaxial wafer of claim 1, wherein the quantum well layer has a thickness of 1nm to 3nm and the quantum barrier layer has a thickness of 10nm to 14nm.
8. A method for preparing an ultraviolet LED epitaxial wafer, which is used for preparing the ultraviolet LED epitaxial wafer according to any one of claims 1 to 7, the method comprising:
the method comprises the steps of growing an active layer, wherein the active layer comprises a quantum well layer and a quantum barrier layer which are periodically and alternately grown, the quantum well layer and the quantum barrier layer are all AlGaN layers, and in the process of growing the quantum well layer, al components are controlled to change in three stages;
a first stage of controlling the Al component to gradually decrease from the initial component to a first component;
controlling the Al component to have at least one change period, wherein one change period is gradually increased from the first component to the second component, and gradually reduced to the first component after stabilizing for a first preset time;
and a third stage of controlling the Al component to be gradually increased from the first component to the initial component.
9. An LED chip comprising the ultraviolet LED epitaxial wafer of any one of claims 1 to 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311317237.8A CN117080328B (en) | 2023-10-12 | 2023-10-12 | Ultraviolet LED epitaxial wafer, preparation method thereof and LED chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311317237.8A CN117080328B (en) | 2023-10-12 | 2023-10-12 | Ultraviolet LED epitaxial wafer, preparation method thereof and LED chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN117080328A CN117080328A (en) | 2023-11-17 |
| CN117080328B true CN117080328B (en) | 2024-01-09 |
Family
ID=88702740
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311317237.8A Active CN117080328B (en) | 2023-10-12 | 2023-10-12 | Ultraviolet LED epitaxial wafer, preparation method thereof and LED chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117080328B (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001274375A (en) * | 2000-03-28 | 2001-10-05 | Nec Corp | Heterojunction field effect transistor |
| CN110970533A (en) * | 2019-12-30 | 2020-04-07 | 广东德力光电有限公司 | Purple light epitaxial structure of LED flip chip and preparation method thereof |
| CN114038972A (en) * | 2022-01-10 | 2022-02-11 | 江西兆驰半导体有限公司 | LED epitaxial wafer, epitaxial growth method and LED chip |
| CN114725257A (en) * | 2022-04-08 | 2022-07-08 | 江西兆驰半导体有限公司 | GaN-based light emitting diode epitaxial wafer, preparation method thereof and light emitting diode |
| CN115799416A (en) * | 2023-02-15 | 2023-03-14 | 江西兆驰半导体有限公司 | Deep ultraviolet light emitting diode epitaxial wafer and preparation method thereof |
| CN116314502A (en) * | 2023-05-19 | 2023-06-23 | 江西兆驰半导体有限公司 | High-luminous-efficiency light-emitting diode epitaxial wafer, preparation method thereof and LED chip |
| CN116364821A (en) * | 2023-03-14 | 2023-06-30 | 江西兆驰半导体有限公司 | Ultraviolet LED epitaxial wafer, epitaxial growth method and ultraviolet LED |
| CN116387433A (en) * | 2023-05-09 | 2023-07-04 | 苏州紫灿科技有限公司 | Deep ultraviolet light-emitting diode and epitaxial growth method thereof |
| CN116525735A (en) * | 2023-07-04 | 2023-08-01 | 江西兆驰半导体有限公司 | Light-emitting diode epitaxial wafer and preparation method thereof |
-
2023
- 2023-10-12 CN CN202311317237.8A patent/CN117080328B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001274375A (en) * | 2000-03-28 | 2001-10-05 | Nec Corp | Heterojunction field effect transistor |
| CN110970533A (en) * | 2019-12-30 | 2020-04-07 | 广东德力光电有限公司 | Purple light epitaxial structure of LED flip chip and preparation method thereof |
| CN114038972A (en) * | 2022-01-10 | 2022-02-11 | 江西兆驰半导体有限公司 | LED epitaxial wafer, epitaxial growth method and LED chip |
| CN114725257A (en) * | 2022-04-08 | 2022-07-08 | 江西兆驰半导体有限公司 | GaN-based light emitting diode epitaxial wafer, preparation method thereof and light emitting diode |
| CN115799416A (en) * | 2023-02-15 | 2023-03-14 | 江西兆驰半导体有限公司 | Deep ultraviolet light emitting diode epitaxial wafer and preparation method thereof |
| CN116364821A (en) * | 2023-03-14 | 2023-06-30 | 江西兆驰半导体有限公司 | Ultraviolet LED epitaxial wafer, epitaxial growth method and ultraviolet LED |
| CN116387433A (en) * | 2023-05-09 | 2023-07-04 | 苏州紫灿科技有限公司 | Deep ultraviolet light-emitting diode and epitaxial growth method thereof |
| CN116314502A (en) * | 2023-05-19 | 2023-06-23 | 江西兆驰半导体有限公司 | High-luminous-efficiency light-emitting diode epitaxial wafer, preparation method thereof and LED chip |
| CN116525735A (en) * | 2023-07-04 | 2023-08-01 | 江西兆驰半导体有限公司 | Light-emitting diode epitaxial wafer and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN117080328A (en) | 2023-11-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5684455B2 (en) | Method of manufacturing a III-nitride device or III-nitride semiconductor using a p-type semipolar III nitride semiconductor doped with a p-type dopant during growth, a semipolar III nitride semiconductor, and a p-type III Method for manufacturing a nitride semiconductor | |
| JP2009526405A5 (en) | ||
| CN108987256B (en) | Growth method of p-type AlGaN semiconductor material | |
| CN114975704B (en) | LED epitaxial wafer and preparation method thereof | |
| CN109103303B (en) | Preparation method of light-emitting diode epitaxial wafer and light-emitting diode epitaxial wafer | |
| CN110148652B (en) | Preparation method of epitaxial wafer of light emitting diode and epitaxial wafer | |
| CN114927601B (en) | Light emitting diode and preparation method thereof | |
| CN115911202A (en) | Light emitting diode epitaxial wafer, preparation method thereof and light emitting diode | |
| CN112687773B (en) | Epitaxial wafer of ultraviolet light-emitting diode and preparation method thereof | |
| KR101008856B1 (en) | Production method of group ? nitride semiconductor element | |
| CN116364821A (en) | Ultraviolet LED epitaxial wafer, epitaxial growth method and ultraviolet LED | |
| CN116646431A (en) | Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode | |
| CN117080328B (en) | Ultraviolet LED epitaxial wafer, preparation method thereof and LED chip | |
| JP2005210091A (en) | Group iii nitride semiconductor element and light emitting element | |
| JP3987360B2 (en) | Epitaxial substrate, epitaxial substrate for electronic device, and electronic device | |
| TW200527721A (en) | Group III nitride semiconductor device and light-emitting device using the same | |
| CN100576586C (en) | Make the method for III group-III nitride semiconductor element | |
| CN116705942B (en) | Light emitting diode and preparation method thereof | |
| CN117525235A (en) | Active layer, preparation method thereof, epitaxial wafer and light-emitting diode | |
| CN112331563B (en) | Preparation method of gallium nitride-based high-electron-mobility transistor epitaxial wafer | |
| CN114335275B (en) | Ultraviolet light-emitting diode epitaxial wafer, and preparation method and application thereof | |
| CN117637943A (en) | Ultraviolet LED epitaxial wafer, preparation method thereof and LED chip | |
| JPH0529653A (en) | Semiconductor device | |
| JP2000294880A (en) | Group-iii nitride semiconductor thin film and its fabrication | |
| CN116682897A (en) | Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |