CN117525235A - Active layer, preparation method thereof, epitaxial wafer and light-emitting diode - Google Patents
Active layer, preparation method thereof, epitaxial wafer and light-emitting diode Download PDFInfo
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- CN117525235A CN117525235A CN202311109389.9A CN202311109389A CN117525235A CN 117525235 A CN117525235 A CN 117525235A CN 202311109389 A CN202311109389 A CN 202311109389A CN 117525235 A CN117525235 A CN 117525235A
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- 238000002360 preparation method Methods 0.000 title abstract description 10
- 230000004888 barrier function Effects 0.000 claims abstract description 51
- 239000004065 semiconductor Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 11
- 230000003247 decreasing effect Effects 0.000 claims description 8
- 230000000903 blocking effect Effects 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 230000007423 decrease Effects 0.000 abstract description 6
- 238000002347 injection Methods 0.000 abstract description 6
- 239000007924 injection Substances 0.000 abstract description 6
- 239000000203 mixture Substances 0.000 description 14
- 230000008859 change Effects 0.000 description 9
- 230000000737 periodic effect Effects 0.000 description 9
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- 230000032683 aging Effects 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000001126 phototherapy Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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Abstract
The invention provides an active layer and a preparation method thereof, an epitaxial wafer and a light-emitting diode, wherein the active layer comprises the following components: comprises a quantum barrier layer and a quantum well layer which are periodically stacked, wherein the quantum well layer is In x Al y Ga （1‑x‑y） An N layer, the quantum barrier layer is In m Ga n Al （1‑m‑n） N; the number of the periods of the active layer increases from 0 to a first preset value, the number of the periods of the active layer increases from 0 to a second preset value, the thickness of the quantum barrier layer decreases as the number of the periods of the active layer increases, and the thickness of the quantum barrier layer decreases as the number of the periods of the active layer increases. The invention solves the problem of low luminous efficiency of the epitaxial wafer in the prior art caused by low hole injection efficiency.
Description
Technical Field
The present invention relates to the field of semiconductor technologies, and in particular, to an active layer, a method for manufacturing the active layer, an epitaxial wafer, and a light emitting diode.
Background
Ultraviolet LEDs (UV LEDs) are mainly used in biomedical, anti-counterfeit, purification (water, air, etc.), computer data storage, military, etc. With the development of technology, new application can be continuously appeared to replace the original technology and products, and ultraviolet LEDs have wide market application prospects, for example, ultraviolet LED phototherapy instruments are popular medical instruments in the future, but the technology is still in a growing period.
The development of ultraviolet LEDs has faced a number of unique technical difficulties compared to GaN-based blue LEDs, such as: epitaxial growth of high Al composition AlGaN material is difficult, and in general, the higher the Al composition is, the lower the crystal quality is, and the dislocation density is generally 10 9 ~10 10 /cm 2 Or even higher; the doping of AlGaN materials is much more difficult than GaN, both n-type and p-type doping, and as the Al composition increases, the conductivity of the epitaxial layer decreases rapidly, especially the doping of p-type AlGaN is particularly troublesome, the activation efficiency of the dopant Mg is low, resulting in insufficient holes, sharp decreases in conductivity and luminous efficiency, and so on.
Disclosure of Invention
Based on the above, the invention aims to provide an active layer, a preparation method thereof, an epitaxial wafer and a light-emitting diode, and aims to solve the problem that the epitaxial wafer in the prior art is low in light-emitting efficiency due to low hole injection efficiency.
The embodiment of the invention is realized as follows:
in one aspect, the present invention provides an active layer comprising a quantum barrier layer and a quantum well layer arranged In a periodic stack, wherein the quantum well layer is In x Al y Ga （1-x-y） An N layer, the quantum barrier layer is In m Ga n Al （1-m-n） N；
The number of the y is increased from 0 to a first preset value along with the number of the periods of the active layer, the number of the n is increased from 0 to a second preset value along with the number of the periods of the active layer, and the thickness of the quantum barrier layer is decreased along with the increase of the number of the periods of the active layer.
In addition, according to the active layer proposed above, at least the following additional technical features may be provided:
further, the first preset value is 0.35, and the second preset value is 0.4.
Further, the In x Al y Ga （1-x-y） Y and In N m Ga n Al （1-m-n） N in N is increased by 0.05-0.1 each cycle.
Further, in a single period, the thickness of the quantum well layer is 2nm, and the thickness of the quantum barrier layer is 6 nm-30 nm.
Further, the growth period of the active layer is 5-30.
In another aspect, the present invention provides a method for preparing an active layer, for preparing the active layer, where the method includes:
introducing a source and a growth atmosphere required by growth;
periodically growing the quantum barrier layer and the quantum well layer to obtain the active layer, wherein the quantum well layer is In x Al y Ga （1-x-y） An N layer, the quantum barrier layer is In m Ga n Al （1-m-n） N；
The number of the y is increased from 0 to a first preset value along with the number of the periods of the active layer, the number of the n is increased from 0 to a second preset value along with the number of the periods of the active layer, and the thickness of the quantum barrier layer is decreased along with the increase of the number of the periods of the active layer.
Further, in the preparation method of the active layer, the growth temperature of the active layer is 1050-1100 ℃.
Further, in the preparation method of the active layer, the growth pressure of the active layer is 50-200 mbar.
In still another aspect, the present invention provides an epitaxial wafer, including the active layer, where the epitaxial wafer further includes a substrate, an AlN layer, an N-type semiconductor layer, an electron blocking layer, and a P-type semiconductor layer;
the AlN layer, the N-type semiconductor layer, the active layer, the electron blocking layer and the P-type semiconductor layer are sequentially laminated on the substrate.
In still another aspect, the present invention further provides a light emitting diode, including the epitaxial wafer described above.
Embodiment of the invention In x Al y Ga （1-x-y） N layer and In m Ga n Al （1-m-n） The y and N in the N are increased along with the periodic change of the active layer, namely, a structure that growth is carried out in a mode of gradual change of Al/Ga components and gradual change of thickness is adopted, so that the purpose of reducing the movement rate of electrons by the depth of a conditional quantum well layer is achieved, the Ga components of the quantum barrier layer are increased along with the periodic increase of the active layer, the thickness of the quantum barrier layer is decreased along with the periodic increase of the active layer, and the movement rate of electrons is reduced and the injection efficiency of holes is improved through the components and the thickness of the quantum barrier layer. Thereby improving the composite efficiency, further improving the luminous efficiency and solving the problem of low luminous efficiency of the epitaxial wafer in the prior art.
Drawings
Fig. 1 is a schematic structural diagram of an epitaxial wafer according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of an active layer in an epitaxial wafer according to an embodiment of the present invention;
FIG. 3 is a flow chart of an active layer manufacturing method according to an embodiment of the invention;
the invention will be further described in the following detailed description in conjunction with the above-described figures.
Detailed Description
In order that the invention may be readily understood, a more complete description of the invention will be rendered by reference to the appended drawings. Several embodiments of the invention are presented in the figures. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "mounted" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like are used herein for illustrative purposes only.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
Aiming at the problem of low luminous efficiency caused by low hole injection efficiency, the embodiment of the invention provides an active layer, a preparation method thereof, an epitaxial wafer and a light-emitting diode, wherein:
referring to fig. 1 to 2, a schematic structure of an epitaxial wafer according to an embodiment of the present invention is shown, and the epitaxial wafer includes:
a substrate 1, an AlN layer 2, an N-type semiconductor layer 3, an active layer 4, an electron blocking layer 5, and a P-type semiconductor layer 6, which are sequentially stacked on the substrate 1.
Wherein the active layer 4 comprises a quantum well layer 41 and a quantum barrier layer 42 which are periodically stacked, and the quantum well layer 41 is In x Al y Ga （1-x-y） N layer, quantum barrier layer 42 is In m Ga n Al （1-m-n） N；
Specifically, y of the quantum well layer 41 increases from 0 to a first preset value along with the cycle number of the active layer, n increases from 0 to a second preset value along with the cycle number of the active layer, and the thickness of the quantum barrier layer 42 decreases along with the cycle number of the active layer.
It will be appreciated that In x Al y Ga （1-x-y） N layer and In m Ga n Al （1-m-n） The y and N in N are increased along with the periodic change of the active layer, namely, the structure of growing in a mode of Al/Ga component gradual change and thickness gradual change is adopted, thereby achieving the purpose of reducing the movement rate of electrons by the depth of the conditional quantum well layer 41, and the thickness of the quantum barrier layer 42 is along with the periodic number of the active layer 4Increasing and decreasing, the composition and thickness of the quantum barrier layer 42 decreases the rate of movement of electrons and increases the efficiency of hole injection. Thereby improving the composite efficiency, further improving the luminous efficiency and solving the problem of low luminous efficiency of the epitaxial wafer in the prior art.
Specifically, the first preset value is 0.35, the second preset value is 0.4, and the contents of the proper Al component and Ga component can affect the light emitting wavelength and the light emitting brightness of the epitaxial wafer finally. Wherein In x Al y Ga （1-x-y） Y and In N m Ga n Al （1-m-n） N in N is gradually increased by 0.05-0.1 every cycle, the thickness of the quantum well layer 41 is 2nm, the thickness of the quantum barrier layer 42 is 6-30 nm, and the proper growth thickness can influence the light-emitting brightness and aging performance of the epitaxial wafer.
Illustratively, the substrate 1 may include sapphire, siC, si-based, gaN, and the type of the substrate 1 is not limited, and alternatively, the substrate 1 is a Si-based substrate, which has advantages of good thermal conductivity, low cost, mature process, and easy peeling.
Alternatively, the AlN layer 2 has a thickness of 1 μm to 4 μm, and the main function of the layer is to release lattice mismatch and thermal mismatch of the sapphire substrate and AlGaN material.
The N-type semiconductor layer 3 is N-type doped Al x Ga 1-x N layer, the dopant is silane, the doping concentration is 5E18cm -3 -1E20cm -3 The Al component is generally 40% -60%.
Optionally, after the active layer 4 is finished, an EBL electron blocking layer 5 is grown, wherein the material of the EBL electron blocking layer is AlyGa1-yN, and the Al component is higher than the Al components of the quantum well and the quantum barrier in the active layer 4, and is generally controlled to be 60% -70%, and the electron overflow is mainly blocked.
Optionally, the P-type semiconductor layer 6 is P-type doped Al u Ga 1-u N layer, or compound P type semiconductor layer 6, wherein P type Al z Ga 1-z The N component is higher than the Al component of the quantum well, and the P type doping concentration is generally 5E19 cm -3 ~5E20 cm -3 。
Illustratively, the growth process of each layer may be as follows:
and growing a high-temperature AlN layer 2 on the Si substrate, and preparing the high-temperature AlN layer in the MOCVD reaction cavity. Placing the substrate 1 in an MOCVD reaction cavity, and introducing TMAL and NH into the reaction cavity 3 AlN thin film is prepared by chemical vapor deposition. The growth temperature in this example was 1250 deg. and the growth thickness was about 1.5 μm;
when the AlN layer 2 is processed in a normal growth manner, cracks may occur. Thus in this embodiment, the layer employs NH under low pressure, high temperature conditions 3 Pulsed-on preparation, i.e. continuous-on MO source (TMAL source and TMGa source), but NH 3 Intermittently introducing gas into the reaction chamber in a pulse mode, so that an AlN layer with better crystal quality can be obtained;
the preparation environment is that in the MOCVD high temperature reaction chamber, the pressure is 50mbar, the temperature is 1250 ℃, ammonia gas is intermittently introduced into the reaction chamber after 30s is opened and 10s is closed. The AlN layer has a thickness of 1.5um;
further, an N-type semiconductor layer 3 is grown after the AlN layer 2. The dopant of the N-type semiconductor can be Si, and the doping concentration of the electron supply layer can be 5E18cm -3 -1E20 cm -3 。
The N-type semiconductor layer 3 in this example was grown under 1100 degrees, and the thickness of the growth was designed to be 2 μm, the Al composition was 50%, and the doping concentration was 1E19cm -3 ；
A P-type semiconductor layer 6 is grown after the active layer 4. The dopant of the P-type semiconductor 6 may be Mg, and the P-type semiconductor layer 6 of the embodiment is P-type AL z Ga 1-z N, the Al component of the layer is 30%, the thickness is 200nm, and the doping concentration of Mg is 5E19 cm -3 。
Referring to fig. 3, on the other hand, the method for preparing an active layer according to the embodiment of the present invention is used for preparing the active layer, and the method for preparing an epitaxial wafer includes steps S10 to S12.
And step S10, introducing sources and a growth atmosphere required by growth.
Wherein, trimethylgallium or gallium source is adopted, high-purity ammonia gas is adopted as nitrogen source, and high-purity H 2 As a carrier gas, trimethylaluminum was used as an aluminum source.
Step S11, periodically growing the quantum barrier layer and the quantum well layer to obtain the active materialA quantum well layer of In x Al y Ga （1-x-y） An N layer, the quantum barrier layer is In m Ga n Al （1-m-n） N。
Specifically, the growth temperature of the active layer is 1050-1100 ℃, and the growth pressure of the active layer is 50-200 mbar. The number of the periods of the y along with the active layer is increased from 0 to a first preset value, the number of the n along with the active layer is increased from 0 to a second preset value, and the thickness of the quantum barrier layer is decreased along with the increase of the number of the active layer.
Specifically, to further illustrate the implementation manner of the active layer In the embodiment of the present invention In more detail, taking one specific embodiment as an example, the first quantum barrier layer is formed of InAlN with a thickness of 20nm, the second quantum barrier layer is formed of InAlGaN with an In content of 5%, a Ga content of 5%, a thickness of 18nm, and the third quantum barrier layer is formed of InAlGaN with an In content of 10%, a Ga content of 16nm; according to one cycle of the secondary rule, the Al component of the last quantum barrier layer is 55%, ga is 40%, in is 5%, and the thickness of the last quantum barrier layer is 6nm.
The first quantum well layer is made of InGaN with the thickness of 2nm, the second quantum well layer is made of InAlGaN with the In content of 5%, the Al content of 5% and the thickness of 2nm, and the third quantum well layer is made of InAlGaN with the In content of 10% and the thickness of 2nm; according to one cycle of the sub-law, the Al component of the last quantum well layer is 35%, the Ga component is 60%, the In component is 5%, and the thickness of the last quantum well layer is 2nm.
On the other hand, the light emitting diode provided by the embodiment of the invention comprises the epitaxial wafer.
In order that the invention may be readily understood, a more particular description of the invention will be rendered by reference to specific embodiments that are illustrated in the appended drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
In addition, the active layer in the prior art, the comparative examples under the variation of different components and the aging performance under the embodiment of the present invention were tested respectively to obtain test data as shown in table one, wherein,
the first embodiment is a structure in which the components of the quantum well layer and the quantum barrier layer and the thickness of the quantum barrier layer are gradually changed;
the first comparison example is an existing active layer structure, a quantum barrier and quantum well structure with constant composition and thickness, the thickness of the quantum well is 2nm, and the thickness of the quantum barrier layer is 12m;
the second comparative example is a structure in which the composition of the quantum well layer is graded, the thickness of the quantum well is 2nm, the thickness of the quantum barrier layer is 12m, and the A1 composition of the well is graded from 95% to 55%;
the third comparative example is a structure in which the composition of the quantum barrier layer is graded, the thickness of the quantum well is 2nm, the thickness of the quantum barrier layer is 12m, and the A1 composition of the barrier is graded from 95% to 55%;
the fourth comparative example is a structure in which the composition of the quantum well layer and the quantum barrier layer is graded, the well is 2nm, the barrier (20 nm is graded to 6 nm), the A1 composition of the well is graded from 0 to 35%, and the A1 composition of the barrier is graded from 0 to 35%.
List one
The uniform preparation temperature of the epitaxial wafer for performance test is 1060 ℃, ammonia gas is 6L, and the pressure is 50mbar.
As is apparent from the combination of the first example and the first to fourth examples, the structure In which growth is performed by means of gradual Al/Ga composition change and gradual thickness change, specifically, in x Al y Ga （1-x-y） N layer and In m Ga n Al （1-m-n） The y and N in N are increased along with the periodic change of the active layer, so that the purpose of reducing the movement rate of electrons by the depth of the conditional quantum well layer is achieved, the Ga component of the quantum barrier layer is increased along with the periodic increase of the active layer, the thickness of the quantum barrier layer is decreased along with the periodic increase of the active layer, and the Ga component of the quantum barrier layer is reduced by the component and the thickness of the quantum barrier layerThe movement rate of electrons is low, and the injection efficiency of holes is improved. Thereby improving the composite efficiency, further improving the luminous efficiency, solving the problem of low luminous efficiency of the epitaxial wafer in the prior art, and improving the aging performance.
The foregoing examples illustrate only a few embodiments of the invention and are described in detail herein without thereby limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (10)
1. An active layer comprising a quantum barrier layer and a quantum well layer which are periodically stacked, wherein the quantum well layer is In x Al y Ga （1-x-y） An N layer, the quantum barrier layer is In m Ga n Al （1-m-n） N；
The number of the y is increased from 0 to a first preset value along with the number of the periods of the active layer, the number of the n is increased from 0 to a second preset value along with the number of the periods of the active layer, and the thickness of the quantum barrier layer is decreased along with the increase of the number of the periods of the active layer.
2. The active layer of claim 1, wherein the first preset value is 0.35 and the second preset value is 0.4.
3. The active layer of claim 1, wherein the In x Al y Ga （1-x-y） Y and In N m Ga n Al （1-m-n） N in N is increased by 0.05-0.1 each cycle.
4. The active layer of claim 1, wherein the quantum well layer has a thickness of 1-3 nm and the quantum barrier layer has a thickness of 6-30 nm in a single period.
5. The active layer according to any one of claims 1 to 4, wherein a growth period of the active layer is 5 to 30.
6. A method of producing an active layer, characterized by being used for producing the active layer according to any one of claims 1 to 5, the method comprising:
introducing a source and a growth atmosphere required by growth;
periodically growing the quantum barrier layer and the quantum well layer to obtain the active layer, wherein the quantum well layer is In x Al y Ga （1-x-y） An N layer, the quantum barrier layer is In m Ga n Al （1-m-n） N；
The number of the y is increased from 0 to a first preset value along with the number of the periods of the active layer, the number of the n is increased from 0 to a second preset value along with the number of the periods of the active layer, and the thickness of the quantum barrier layer is decreased along with the increase of the number of the periods of the active layer.
7. The method of claim 6, wherein the active layer has a growth temperature of 1050-1100 ℃.
8. The method for manufacturing an active layer according to claim 6, wherein the growth pressure of the active layer is 50-200 mbar.
9. An epitaxial wafer, characterized by comprising the active layer of any one of claims 1 to 5, further comprising a substrate, an AlN layer, an N-type semiconductor layer, an electron blocking layer, and a P-type semiconductor layer;
the AlN layer, the N-type semiconductor layer, the active layer, the electron blocking layer and the P-type semiconductor layer are sequentially laminated on the substrate.
10. A light emitting diode comprising the epitaxial wafer according to claim 9.
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