CN112750691A - Nitrogen polar surface GaN material and homoepitaxial growth method - Google Patents
Nitrogen polar surface GaN material and homoepitaxial growth method Download PDFInfo
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 title claims abstract description 166
- 229910052757 nitrogen Inorganic materials 0.000 title claims abstract description 80
- 239000000463 material Substances 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims abstract description 28
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 87
- 230000007704 transition Effects 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 30
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000013078 crystal Substances 0.000 claims abstract description 15
- 238000001451 molecular beam epitaxy Methods 0.000 claims abstract description 15
- 230000008569 process Effects 0.000 claims abstract description 15
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 9
- 229910052733 gallium Inorganic materials 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052706 scandium Inorganic materials 0.000 claims description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000000969 carrier Substances 0.000 abstract description 3
- 238000004886 process control Methods 0.000 abstract description 2
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 8
- 238000001534 heteroepitaxy Methods 0.000 description 8
- 229910001873 dinitrogen Inorganic materials 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000001657 homoepitaxy Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- OCKGFTQIICXDQW-ZEQRLZLVSA-N 5-[(1r)-1-hydroxy-2-[4-[(2r)-2-hydroxy-2-(4-methyl-1-oxo-3h-2-benzofuran-5-yl)ethyl]piperazin-1-yl]ethyl]-4-methyl-3h-2-benzofuran-1-one Chemical compound C1=C2C(=O)OCC2=C(C)C([C@@H](O)CN2CCN(CC2)C[C@H](O)C2=CC=C3C(=O)OCC3=C2C)=C1 OCKGFTQIICXDQW-ZEQRLZLVSA-N 0.000 description 1
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- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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Abstract
The invention discloses a nitrogen polar surface GaN material and a manufacturing method thereof, and mainly solves the problems that the existing nitrogen polar surface GaN material is high in dislocation density, poor in surface appearance, high in concentration of unintended doped background carriers and high in difficulty in growth process control. The material structure of the GaN-based solar cell comprises a substrate (1), a transition layer (2) and a GaN epitaxial layer (3) from bottom to top, wherein the transition layer adopts InAlN or ScAlN or YAlN, and the substrate adopts gallium nitride single crystal with a nitrogen polar surface of a non-oblique tangent plane. The manufacturing steps are as follows: growing a transition layer with the thickness of 1nm-10nm on a substrate by using a molecular beam epitaxy method; and growing a GaN epitaxial layer on the transition layer by using a molecular beam epitaxy method. The material has the advantages of high crystallization quality, smooth surface appearance, low background carrier concentration, simple growth process and high process repeatability and consistency, and can be used for manufacturing high-electron-mobility transistors and high-speed microwave rectifier diodes.
Description
Technical Field
The invention belongs to the field of semiconductor material growth, and particularly relates to a nitrogen polar surface GaN semiconductor material which can be used for manufacturing a high-electron-mobility transistor and a high-speed microwave rectifier diode.
Background
The III-nitride semiconductor material has unique advantages in the application of the fields of high frequency, high power, high efficiency, high temperature resistance, high pressure resistance, radiation resistance and the like, and is suitable for preparing solid-state microwave power devices and microwave millimeter wave monolithic integrated circuits. Through intensive research in recent thirty years, the performance and reliability of the GaN-based high electron mobility transistor are improved, and the GaN-based high electron mobility transistor is applied to 5G communication base stations and radar detection. At present, the research and application of nitride semiconductor materials and devices are mainly based on gallium polar surface nitride materials, because the epitaxial growth technology of the gallium polar surface materials is mature, the high-quality growth is easy to realize, and a standard gallium polar surface material device process flow is established. In order to further improve the working frequency and the output power of the GaN-based high electron mobility transistor, a nitrogen polar surface nitride material is adopted as one of the main technical approaches.
In the nitrogen polar surface GaN heterojunction material, the barrier layer naturally forms a back barrier below the channel layer, so that the two-dimensional electron gas confinement property can be improved, and the limitation of the proportional reduction rule of the device gate length and the barrier layer thickness is avoided. The GaN channel in the nitrogen polar surface GaN heterojunction material is positioned on the top of the epitaxial material, so that low ohmic contact resistance is easy to realize. At present, the nitrogen polar surface GaN material is usually obtained on other substrate materials such as SiC and the like by adopting the metal organic chemical vapor deposition technology for heteroepitaxy. The GaN material structure with the nitrogen polar surface grown by the conventional method is shown in FIG. 1. The GaN substrate comprises a substrate, an AlN nucleating layer, a GaN buffer layer and a GaN material with a nitrogen polar surface from bottom to top. This material has the following disadvantages:
firstly, high-density dislocation defects exist in the GaN material of the heteroepitaxy nitrogen polar surface, which can cause the reliability degradation of devices, the surface appearance of the material is rough, and the number of pit-shaped defects is large;
secondly, the GaN material on the heteroepitaxy nitrogen polar surface is easy to have polarity inversion, and the difficulty of polarity control is high;
thirdly, the background carrier concentration of the nitrogen polar surface GaN material of the hetero-epitaxy is high, a body leakage channel can be formed, and the breakdown voltage of the device is reduced;
fourthly, heteroepitaxy nitrogen polar surface GaN material is adopted by the metal organic chemical vapor deposition technology, and a beveled substrate is needed, so that the material epitaxy cost is increased;
fifthly, the metal organic chemical vapor deposition technology heteroepitaxy nitrogen polar surface GaN material needs nitrogen-rich growth conditions, and the conditions hinder the migration capability and diffusion length of metal atoms on the growth surface of the film.
Sixthly, the metal organic chemical vapor deposition technology is used for hetero-epitaxial nitrogen polar surface GaN material, and Fe doping is adopted to compensate background current carriers in the material, so that the control difficulty and parasitic pollution of the growth process are increased.
Seventhly, when the GaN material with the nitrogen polar surface is subjected to heteroepitaxy, the growth temperature and the airflow need to be changed and switched when the AlN nucleating layer and the GaN buffer layer grow, and the growth process needs short pause and interval, so that the background doping impurity concentration in the GaN material with the nitrogen polar surface can be increased.
Disclosure of Invention
The invention aims to provide a nitrogen polar surface GaN material and a homoepitaxial growth method aiming at the defects of the prior art, so as to improve the crystal quality and the surface appearance of the nitrogen polar surface GaN material and reduce the background carrier concentration and the difficulty in growth process control.
The technical scheme of the invention is realized as follows:
1. a nitrogen polar surface GaN material comprises a substrate and a GaN epitaxial layer, and is characterized in that: a transition layer is arranged between the substrate and the GaN epitaxial layer, the transition layer adopts InAlN, ScAlN or YAlN, and the thickness of the transition layer is 1nm-10 nm;
the substrate adopts a nitrogen polar surface gallium nitride single crystal with a non-oblique tangent plane.
2. A preparation method of a nitrogen polar surface GaN material is characterized by comprising the following steps:
1) molecular beam epitaxy method is used on the substrate, the temperature is 670-720 ℃, the nitrogen flow is 2.3sccm, and the equilibrium vapor pressure of the metal beam is 1.0 multiplied by 10-8Torr～2.6×10-7Growing a transition layer with the thickness of 1nm to 10nm under the process condition that the power of a nitrogen radio frequency source is 375W;
2) molecular beam epitaxy is adopted, the temperature is set to be 670-720 ℃, the nitrogen flow is 2.3sccm, and the equilibrium vapor pressure of gallium beam current is 6.0 multiplied by 10-7Torr～8.0×10-7And (5) carrying out Torr and a nitrogen radio frequency source with the power of 375W, and growing a GaN epitaxial layer on the transition layer to finish the preparation of the material.
Compared with the prior art, the invention has the following advantages:
1. the invention can realize the in-plane lattice matching of the nitrogen polar surface gallium nitride substrate, the transition layer and the nitrogen polar surface GaN epitaxial layer by adopting the InAlN, ScAlN or YAlN transition layer, thereby reducing the dislocation density and the surface pit defect density.
2. The invention adopts InAlN or ScAlN or YAlN transition layer, so that the unintentional doping impurities at the homoepitaxy interface can be effectively adsorbed and captured, the impurities on the surface of the nitrogen polar face gallium nitride substrate are prevented from diffusing into the nitrogen polar face GaN material, and the background carrier concentration of the nitrogen polar face GaN material is reduced. In addition, the GaN material on the nitrogen polar surface does not need to adopt Fe doping to compensate background carriers in the growth process, and has the advantages of simple growth process, low control difficulty, high process repeatability and high consistency.
3. The invention adopts molecular beam epitaxy technology to grow the GaN epitaxial layer of the nitrogen polar surface, is easy to enhance the migration capability and diffusion length of metal atoms on the growth surface of the film under the gallium-rich condition, and improves the surface appearance of the GaN material of the nitrogen polar surface.
4. The substrate in the invention adopts the conventional non-oblique tangent plane substrate, thereby reducing the material epitaxy cost.
5. The invention adopts homoepitaxy to grow the GaN material with the nitrogen polar surface, thereby avoiding the dislocation defect generated by lattice mismatch in heteroepitaxy.
6. In the invention, because the growth temperature of the transition layer is consistent with that of the GaN epitaxial layer, the transient pause and interval in the growth process are avoided, thereby reducing the adsorption of the unintended doped impurities.
Drawings
FIG. 1 is a schematic structural diagram of a conventional growing nitrogen polar plane GaN material;
FIG. 2 is a schematic structural diagram of a nitrogen polar plane GaN material of the invention;
FIG. 3 is a schematic flow chart of the present invention for fabricating a GaN material with a nitrogen polar surface.
Detailed Description
Embodiments of the present invention are described in further detail below with reference to the accompanying drawings.
Referring to fig. 2, the nitrogen polar surface GaN material of the present invention includes, from bottom to top, a substrate 1, a transition layer 2, and a GaN epitaxial layer 3. Wherein the transition layer adopts InAlN, ScAlN or YAlN, and the thickness is 1nm-10 nm. The substrate adopts a nitrogen polar surface gallium nitride single crystal; the thickness of the GaN epitaxial layer of the nitrogen polar surface is determined according to actual requirements.
Referring to fig. 3, the nitrogen polar plane GaN material of the present invention is prepared in the following three examples.
Example 1A gallium nitride single crystal having a nitrogen polar plane as a substrate and a transition layer of In 10nm In thickness was prepared0.17Al0.83And N, the epitaxial layer is a GaN material with a GaN nitrogen polar surface.
Step one, a gallium nitride single crystal with a nitrogen polar surface of a non-oblique section is selected as a substrate, as shown in fig. 3 (a).
Step two, extending In0.17Al0.83N transition layer, as shown in fig. 3 (b).
Epitaxial growth of In with a thickness of 10nm on a GaN single crystal substrate with a nitrogen polar surface by using molecular beam epitaxy0.17Al0.83And an N transition layer.
Epitaxial In0.17Al0.83The process conditions adopted by the N transition layer are as follows: the temperature is 670 ℃, the nitrogen flow is 2.3sccm, and the equilibrium vapor pressure of the indium beam is 1.5 multiplied by 10-7Torr, the equilibrium vapor pressure of aluminum beam is 2.3X 10-7Torr, nitrogen gas RF source power was 375W.
And step three, extending a nitrogen polar surface GaN epitaxial layer, as shown in figure 3 (c).
Using molecular beam epitaxy technique In0.17Al0.83And depositing a GaN epitaxial layer on the N transition layer.
The process conditions adopted by the epitaxial nitrogen polar surface GaN epitaxial layer are as follows: the temperature is 670 ℃, the nitrogen flow is 2.3sccm, and the equilibrium vapor pressure of the gallium beam is 6.0 multiplied by 10-7And Torr, and the power of a nitrogen gas radio frequency source is 375W, thus completing the preparation of the nitrogen polar surface GaN material.
Example 2A gallium nitride single crystal of nitrogen polar plane was produced with a substrate having a non-oblique facet and a transition layer of Sc 5nm thick0.18Al0.82And N, the epitaxial layer is a GaN material with a GaN nitrogen polar surface.
The temperature was set to 690 ℃, the nitrogen flow was 2.3sccm, and the equilibrium vapor pressure of scandium beam was 1.3X 10-8Torr, the equilibrium vapor pressure of aluminum beam is 2.0X 10-7Torr, the process condition of nitrogen gas radio frequency source power of 375W, and the molecular beam epitaxy technique is used for depositing Sc with the thickness of 5nm on a gallium nitride single crystal substrate with a nitrogen polar surface0.18Al0.82And an N transition layer.
Setting the temperature at 690 deg.C, nitrogen flow at 2.3sccm, and balance vapor pressure of gallium beam at 7.0 × 10-7Torr, nitrogen gas radio frequency sourceProcess conditions with power of 375W, using molecular beam epitaxy technique, in Sc0.18Al0.82And depositing a nitrogen polar surface GaN epitaxial layer on the N transition layer to finish the manufacture of the nitrogen polar surface GaN material.
Example 3A gallium nitride single crystal of nitrogen polar plane was prepared with a substrate having a non-chamfered surface and a transition layer having a thickness of 1nm of Y0.11Al0.89And N, the epitaxial layer is a GaN material with a GaN nitrogen polar surface.
Step A, using gallium nitride single crystal with nitrogen polar surface of non-oblique section as substrate, as shown in FIG. 3 (a).
Step B, growing Y0.11Al0.89N transition layer, as shown in fig. 3 (b).
Molecular beam epitaxy is adopted, and the temperature is 720 ℃, the nitrogen flow is 2.3sccm, and the yttrium beam equilibrium vapor pressure is 1.0 multiplied by 10-8Torr, the equilibrium vapor pressure of aluminum beam is 2.6X 10-7Torr, under the process condition that the nitrogen gas radio frequency source power is 375W, Y with the thickness of 1nm is grown on a nitrogen polar surface gallium nitride single crystal substrate with a non-inclined tangent plane0.11Al0.89And an N transition layer.
And step C, growing a nitrogen polar surface GaN epitaxial layer, as shown in figure 3 (C).
Molecular beam epitaxy technology is used, the temperature is 720 ℃, the nitrogen flow is 2.3sccm, and the equilibrium vapor pressure of gallium beam is 8.0 multiplied by 10-7Torr, nitrogen gas radio frequency source power is 375W, at Y0.11Al0.89And growing a nitrogen polar surface GaN epitaxial layer on the N transition layer to finish the manufacture of the nitrogen polar surface GaN material.
The thickness of the GaN epitaxial layer in the above three examples is determined according to actual requirements.
The foregoing description is only three specific examples of the present invention and is not intended to limit the invention, and it will be apparent to those skilled in the art that various modifications and variations in form and detail can be made without departing from the principle and structure of the invention after understanding the content and principle of the invention, but the modifications and variations will fall within the scope of the appended claims.
Claims (4)
1. A nitrogen polar plane GaN material comprising a substrate (1) and a GaN epitaxial layer (3), characterized in that:
a transition layer (2) is arranged between the GaN epitaxial layer (3) and the substrate (1), the transition layer adopts InAlN, ScAlN or YAlN, and the thickness of the transition layer is 1nm-10 nm;
the substrate (1) adopts a nitrogen polar surface gallium nitride single crystal with a non-oblique tangent plane.
2. The material of claim 1, wherein: the thickness of the GaN epitaxial layer is determined according to the use requirement.
3. A homoepitaxial growth method of a nitrogen polar surface GaN material is characterized by comprising the following steps:
1) selecting a nitrogen polar surface gallium nitride single crystal of a non-oblique tangent plane as a substrate;
2) molecular beam epitaxy method is used on the substrate, the temperature is 670-720 ℃, the nitrogen flow is 2.3sccm, and the equilibrium vapor pressure of the metal beam is 1.0 multiplied by 10-8Torr～2.6×10-7Growing a transition layer with the thickness of 1nm to 10nm under the process condition that the power of a nitrogen radio frequency source is 375W;
3) molecular beam epitaxy is adopted, the temperature is set to be 670-720 ℃, the nitrogen flow is 2.3sccm, and the equilibrium vapor pressure of gallium beam current is 6.0 multiplied by 10-7Torr～8.0×10-7And (5) carrying out Torr and a nitrogen radio frequency source with the power of 375W, and growing a GaN epitaxial layer on the transition layer to finish the preparation of the material.
4. The method of claim 3, wherein: the metal beam current equilibrium vapor pressure comprises indium beam current equilibrium vapor pressure, scandium beam current equilibrium vapor pressure, yttrium beam current equilibrium vapor pressure and aluminum beam current equilibrium vapor pressure.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117855355A (en) * | 2024-03-04 | 2024-04-09 | 江西兆驰半导体有限公司 | Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode |
| CN117855355B (en) * | 2024-03-04 | 2024-05-14 | 江西兆驰半导体有限公司 | Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode |
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