CN117855355A - Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode - Google Patents
Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode Download PDFInfo
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Abstract
The invention discloses a light-emitting diode epitaxial wafer, a preparation method thereof and a light-emitting diode, and relates to the technical field of semiconductors. The light-emitting diode epitaxial wafer comprises a Si substrate, and a composite buffer layer, an undoped AlGaN layer, an N-type AlGaN layer, a multiple quantum well layer, an electron blocking layer, a P-type AlGaN layer and a P-type contact layer which are sequentially laminated on the Si substrate, wherein the composite buffer layer comprises a first sub-layer, a second sub-layer and a third sub-layer, the first sub-layer comprises a YAlN layer and a ScAlN layer which are sequentially laminated, and the second sub-layer comprises a Si doped Ga which is sequentially laminated 2 O 3 Layer sum (AlGa) 2 O 3 A third sub-layer comprising Si sequentially laminated 3 N 4 A layer and a Mg doped BGaN layer. The composite buffer layer of the invention can reduce the leakage channel caused by the Si substrate and improveThe quality of the epitaxially grown crystal is improved, thereby improving the luminous efficiency.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a light-emitting diode epitaxial wafer, a preparation method thereof and a light-emitting diode.
Background
The ultraviolet band LED has the advantages of small volume, low energy consumption, long service life, environmental protection and no toxicity, and is widely applied to the aspects of water purification, biological agent detection, sterilization, medicine and the like, thereby having wide market prospect. The light-emitting wavelength of the AlGaN material can be as short as 200nm, so the AlGaN material becomes an important material for manufacturing ultraviolet and deep ultraviolet light-emitting diodes.
The high leakage current and low breakdown voltage of the Si-substrate AlGaN-based device is still the largest short plate. At present, the performance of a device is improved mainly by increasing the thickness of a buffer layer on a Si substrate, however, the method is difficult to control, and has low yield and high cost. Moreover, the Si substrate, which is not completely insulated, provides electrons to the buffer layer, and electrons of the substrate enter the buffer layer to increase the leakage current of the buffer layer, thereby causing high leakage current of the buffer layer on the Si substrate, and further causing breakdown to easily occur, resulting in device damage.
Disclosure of Invention
The invention aims to solve the technical problem of providing the light-emitting diode epitaxial wafer, which can reduce the leakage channel caused by the Si substrate and improve the quality of epitaxially grown crystals, thereby improving the luminous efficiency.
The invention also aims to solve the technical problem of providing the preparation method of the light-emitting diode epitaxial wafer, which has simple process and high light-emitting efficiency.
In order to achieve the technical effects, the invention provides a light-emitting diode epitaxial wafer, which comprises a Si substrate, and a composite buffer layer, an undoped AlGaN layer, an N-type AlGaN layer, a multiple quantum well layer, an electron blocking layer, a P-type AlGaN layer and a P-type contact layer which are sequentially laminated on the Si substrate, wherein the composite buffer layer comprises a first sub-layer, a second sub-layer and a third sub-layer, and the first sub-layer comprises a YAlN layer and a ScAlN layer which are sequentially laminatedA second sub-layer comprising Si-doped Ga sequentially laminated 2 O 3 Layer sum (AlGa) 2 O 3 A third sub-layer comprising Si sequentially laminated 3 N 4 A layer and a Mg doped BGaN layer.
As an improvement of the technical scheme, the thickness of the first sub-layer is 10 nm-40 nm, and the thickness ratio of the YAlN layer to the ScAlN layer is 1 (0.8-1.5);
the thickness of the second sub-layer is 10 nm-50 nm, and the Si is doped with Ga 2 O 3 Layer and the (AlGa) 2 O 3 The thickness ratio of the layers is 1 (0.8-1.5);
the thickness of the third sub-layer is 10 nm-60 nm, and the Si 3 N 4 The thickness ratio of the layer to the Mg-doped BGaN layer is 1 (0.8-1.5).
As an improvement of the technical scheme, the Al component of the first sub-layer accounts for 0.3-0.4, and the Al component gradually decreases along the epitaxial direction.
As an improvement of the technical scheme, the Si is doped with Ga 2 O 3 The Si doping concentration of the layer was 5X 10 15 cm -3 ~7×10 17 cm -3 The method comprises the steps of carrying out a first treatment on the surface of the Said (AlGa) 2 O 3 The Al component of the layer accounts for 0.3-0.6, and the Al component gradually rises along the epitaxial direction.
As an improvement of the technical scheme, the Mg doping concentration of the Mg-doped BGaN layer is 5 multiplied by 10 17 cm -3 ~7×10 18 cm -3 The proportion of the component B is 0.01-0.1.
Correspondingly, the invention also discloses a preparation method of the light-emitting diode epitaxial wafer, which is used for preparing the light-emitting diode epitaxial wafer and comprises the following steps of:
providing a Si substrate, sequentially growing a composite buffer layer, an undoped AlGaN layer, an N-type AlGaN layer, a multiple quantum well layer, an electron blocking layer, a P-type AlGaN layer and a P-type contact layer on the Si substrate, wherein the composite buffer layer comprises a first sub-layer, a second sub-layer and a third sub-layer, the first sub-layer comprises a YAlN layer and a ScAlN layer which are sequentially laminated, and the second sub-layer comprises Si doped Ga which is sequentially laminated 2 O 3 Layer sum (AlGa) 2 O 3 A third sub-layer comprising Si sequentially laminated 3 N 4 A layer and a Mg doped BGaN layer.
As an improvement of the technical scheme, the growth temperature of the first sub-layer is 700-1100 ℃, and the growth pressure is 100 Torr-300 Torr.
As an improvement of the technical scheme, the growth temperature of the second sub-layer is 600-800 ℃ and the growth pressure is 10 -5 mbar~10 -2 mbar。
As an improvement of the technical scheme, the growth temperature of the third sub-layer is 800-1100 ℃, and the growth pressure is 50-300 Torr.
Correspondingly, the invention also discloses a light-emitting diode, which comprises the light-emitting diode epitaxial wafer.
The embodiment of the invention has the following beneficial effects:
the composite buffer layer comprises a first sub-layer, a second sub-layer and a third sub-layer, wherein the YAlN layer and the ScAlN layer in the first sub-layer increase the blocking polarization height and barrier height, and meanwhile, the lattice mismatch between the Si substrate and the epitaxial layer can be gradually relieved, the generation of defects is reduced, and the electric leakage channel of electrons is effectively reduced; si-doped Ga in the second sub-layer 2 O 3 Layer assurance (AlGa) 2 O 3 Dislocation (AlGa) can be reduced while the layer crystal quality is improved 2 O 3 The layer has a higher forbidden bandwidth, and can effectively reduce the mobility of electrons, thereby reducing the generation of a leakage channel; si in the third sub-layer 3 N 4 The layer further blocks dislocation extension, improves crystal quality of the epitaxial layer, and holes generated in the Mg-doped BGaN layer can neutralize part of leakage electrons and reduce migration speed of the electrons, so that photoelectric performance is improved.
Drawings
Fig. 1 is a schematic structural diagram of a light emitting diode epitaxial wafer according to an embodiment of the present invention;
fig. 2 is a flowchart of a method for manufacturing an led epitaxial wafer according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to specific embodiments.
As shown in fig. 1, the embodiment of the invention provides a light emitting diode epitaxial wafer, which comprises a Si substrate 1, and a composite buffer layer 2, an undoped AlGaN layer 3, an N-type AlGaN layer 4, a multiple quantum well layer 5, an electron blocking layer 6, a P-type AlGaN layer 7 and a P-type contact layer 8 sequentially stacked on the Si substrate 1, wherein the composite buffer layer 2 comprises a first sub-layer, a second sub-layer and a third sub-layer, the first sub-layer comprises a YAlN layer and a ScAlN layer sequentially stacked, and the second sub-layer comprises a Si doped Ga sequentially stacked 2 O 3 Layer sum (AlGa) 2 O 3 A third sub-layer comprising Si sequentially laminated 3 N 4 A layer and a Mg doped BGaN layer. The YAlN layer and the ScAlN layer in the first sub-layer increase the blocking polarization height and barrier height, and meanwhile, the lattice mismatch between the Si substrate and the epitaxial layer can be gradually relieved, the generation of defects is reduced, and the electric leakage channel of electrons is effectively reduced; si-doped Ga in the second sub-layer 2 O 3 Layer assurance (AlGa) 2 O 3 Dislocation (AlGa) can be reduced while the layer crystal quality is improved 2 O 3 The layer has a higher forbidden bandwidth, and can effectively reduce the mobility of electrons, thereby reducing the generation of a leakage channel; si in the third sub-layer 3 N 4 The layer further blocks dislocation extension, improves crystal quality of the epitaxial layer, and holes generated in the Mg-doped BGaN layer can neutralize part of leakage electrons and reduce migration speed of the electrons, so that photoelectric performance is improved.
In one embodiment, the thickness of the first sub-layer is 10nm to 40nm, and exemplary is 10nm, 15nm, 20nm, 25nm, 30nm or 40nm, but is not limited thereto. The thickness ratio of the YAlN layer to the ScAlN layer is 1 (0.8-1.5), and exemplary is 1:0.8, 1:0.9, 1:1, 1:1.2, 1:1.3, or 1:1.5, but is not limited thereto.
In one embodiment, the thickness of the second sub-layer is 10nm to 50nm, and exemplary is 10nm, 20nm, 25nm, 30nm, 40nm or 50nm, but not limited thereto. The Si is doped with Ga 2 O 3 Layer and the (AlGa) 2 O 3 The thickness ratio of the layers is 1 (0.8-1.5), and exemplary is 1:0.8, 1:0.9, 1:1, 1:1.2, 1:1.3 or 1:1.5, but is not limited thereto. Ga 2 O 3 The arrangement of layers reduces (AlGa) 2 O 3 Lattice mismatch between thin film and Si substrate is improved (AlGa) 2 O 3 The crystallization quality of the film avoids the generation of polycrystal, and if the thickness is too small, the crystallization grain is large and is unfavorable for Ga 2 O 3 Growth of the layer, thereby affecting subsequent growth (AlGa) 2 O 3 The quality of the layer.
In one embodiment, the thickness of the third sub-layer is 10nm to 60nm, and is exemplified by 10nm, 20nm, 30nm, 40nm, 50nm, or 60nm, but not limited thereto. The Si is 3 N 4 The thickness ratio of the layer to the Mg doped BGaN layer is 1 (0.8-1.5), and exemplary is 1:0.8, 1:0.9, 1:1, 1:1.2, 1:1.3, or 1:1.5, but is not limited thereto.
In one embodiment, the first sub-layer has an Al composition ratio of 0.3 to 0.4, and if the Al composition ratio is less than 0.3, it is unfavorable to increase the blocking polarization height and barrier height; if the Al component is more than 0.4, the lattice quality of the subsequent growth is lowered. Preferably, the Al composition ratio is gradually reduced in the epitaxial direction, increasing the polarization height and barrier height of the barrier while improving the lattice quality of the subsequent growth.
In one embodiment, the Si is doped with Ga 2 O 3 The Si doping concentration of the layer was 5X 10 15 cm -3 ~7×10 17 cm -3 Si doping can reduce the generation of threading dislocation and change the extension direction thereof, thereby reducing dislocation if Si doping concentration is less than 5×10 15 cm -3 The blocking effect on the dislocation is not strong; if the Si doping concentration is more than 7×10 17 cm -3 This can lead to a reduction in crystal quality, for example 5X 10 15 cm -3 、8×10 15 cm -3 、1×10 16 cm -3 、5×10 16 cm -3 、1×10 17 cm -3 、5×10 17 cm -3 Or 7X 10 17 cm -3 But is not limited thereto.
In one embodiment, the (AlGa) 2 O 3 The Al component of the layer accounts for 0.3-0.6, and the Al component is Ga 2 O 3 To increase the formation of Al component (AlGa) 2 O 3 The material can increase the forbidden bandwidth and effectively prevent the migration of electrons, so that the generation of a leakage channel is reduced, and if the Al component accounts for less than 0.3, the blocking effect on electrons is not obvious; if the Al component is more than 0.6, it may cause degradation of crystal quality, and exemplary is 0.3, 0.35, 0.4, 0.45, 0.5 or 0.6, but is not limited thereto. Preferably, the Al component proportion gradually rises along the epitaxial direction, and the forbidden bandwidth is regulated and controlled by the Al component proportion, so that better lattice matching is realized, meanwhile, the mobility of electrons is further reduced, and the generation of a leakage channel is reduced.
In one embodiment, the ratio of the component B of the Mg-doped BGaN layer is 0.01-0.1, and the atoms B can fill vacancies in crystal lattices so as to release compressive stress and block dislocation line generation, and if the ratio of the component B is less than 0.01, the blocking effect on dislocation is small; if the B component is greater than 0.1, the growth of the subsequent epitaxial material is not favored, and exemplary is 0.01, 0.02, 0.05, 0.06, 0.08, or 0.1, but is not limited thereto. Mg doping concentration of Mg doped BGaN layer 5×10 17 cm -3 ~7×10 18 cm -3 Holes generated by Mg doping can reduce electron migration caused by Si substrate, reduce leakage channel, enhance antistatic ability, effectively reduce resistivity of epitaxial layer, reduce working voltage of LED, if Mg doping concentration is less than 5×10 17 cm -3 Sufficient holes cannot be provided to reduce electron migration from the Si substrate; if the doping concentration of Mg is more than 7 multiplied by 10 18 cm -3 Can cause the degradation of crystal quality, affecting the quality of subsequent epitaxial structures, for example 5 x 10 17 cm -3 、8×10 17 cm -3 、1×10 18 cm -3 、5×10 18 cm -3 Or 7X 10 18 cm -3 But is not limited thereto.
In addition to the above-described composite buffer layer structure, other layered structures of the present invention are characterized as follows:
the thickness of the undoped AlGaN layer 3 is 1-5 μm.
The thickness of the N-type AlGaN layer 4 is 1-5 mu m, and the doping concentration of Si is 1 multiplied by 10 19 cm -3 ~5×10 20 cm -3 。
The multiple quantum well layer 5 comprises an AlGaN quantum well layer and an AlGaN quantum barrier layer which are periodically stacked, and the stacking period is 6-12. The thickness of the AlGaN quantum well layer is 2 nm-5 nm, and the Al component accounts for 0.2-0.6; the AlGaN quantum barrier layer has a thickness of 5 nm-15 nm and an Al component ratio of 0.4-0.8.
The electron blocking layer 6 is an AlGaN electron blocking layer, the thickness is 10 nm-50 nm, and the Al component accounts for 0.4-0.8.
The thickness of the P-type AlGaN layer 7 is 100 nm-200 nm, and the doping concentration of Mg is 1 multiplied by 10 19 cm -3 ~5×10 20 cm -3 。
The P-type contact layer 8 is an AlGaN P-type contact layer, the thickness is 10 nm-50 nm, and the doping concentration of Mg is 5 multiplied by 10 19 cm -3 ~5×10 20 cm -3 。
Correspondingly, as shown in fig. 2, the invention also provides a preparation method of the light-emitting diode epitaxial wafer, which comprises the following steps:
s1, providing a Si substrate;
s2, sequentially growing a composite buffer layer, an undoped AlGaN layer, an N-type AlGaN layer, a multiple quantum well layer, an electron blocking layer, a P-type AlGaN layer and a P-type contact layer on the Si substrate; the epitaxial structure may be grown by MOCVD, MBE, PLD or VPE, but is not limited thereto. Specifically, S2 includes the following steps:
s21, growing a composite buffer layer; specifically, S21 includes the following steps:
s211, growing a first sub-layer;
MOCVD growth is adopted, the temperature of the reaction chamber is controlled to be 700-1100 ℃, the pressure is 100-300 Torr, and a YAlN layer is grown; and (3) controlling the temperature of the reaction chamber to be 700-1100 ℃ and the pressure to be 100-300 Torr, and growing the ScAlN layer.
S212, growing a second sub-layer;
PLD growth is adopted, the temperature of the reaction chamber is controlled to be 600-650 ℃, and the pressure is controlled to be 10 -5 mbar~10 -2 mbar, the laser pulse frequency is 2 Hz-3 Hz, and the laser energy density is 1.5J/cm 2 ~2.5J/cm 2 The target material is Ga 2 O 3 Growth of Ga by laser irradiation 2 O 3 A layer, then changing the target material into Si, irradiating with laser, and then changing the target material into Ga 2 O 3 Laser irradiation is repeated for 2-10 cycles to grow Si doped Ga 2 O 3 A layer; PLD growth is adopted, the temperature of the reaction chamber is controlled to be 610-800 ℃ and the pressure is controlled to be 10 -5 mbar~10 - 2 mbar, the laser pulse frequency is 2 Hz-3 Hz, and the laser energy density is 1.5J/cm 2 ~2.5J/cm 2 The target material is Ga with the Al content of 12 atomic percent 2 O 3 Growth (AlGa) 2 O 3 A layer.
S213, growing a third sub-layer;
MOCVD growth is adopted, the temperature of a reaction chamber is controlled to be 800-1000 ℃, the pressure is 100-300 Torr, and NH is introduced 3 As N source, siH is introduced 4 Growing Si as Si source 3 N 4 A layer; controlling the temperature of the reaction chamber to be 800-1100 ℃ and the pressure to be 50-300 Torr, and introducing NH 3 As N source, TEB as B source, TMGa as Ga source, CP 2 Mg is used as a Mg source, and a Mg doped BGaN layer is grown.
S22, growing an undoped AlGaN layer;
MOCVD growth is adopted, the temperature of a reaction chamber is controlled to be 1000-1300 ℃, the pressure is 50-500 Torr, and NH is introduced 3 As an N source, TMGa was introduced as a Ga source, and TMAl was introduced as an Al source.
S23, growing an N-type AlGaN layer;
MOCVD growth is adopted, the temperature of a reaction chamber is controlled to be 1000-1300 ℃, the pressure is 50-500 Torr, and NH is introduced 3 As N source, TMGa as Ga source, TMAL as Al source, siH 4 As an N-type dopant source.
S24, growing a multi-quantum well layer;
MOCVD growth is adopted, the temperature of the reaction chamber is controlled to be 850-950 ℃, the pressure is 50-300 Torr, and NH is introduced 3 As N source, TMGa as Ga source, TMAL as Al source, alGaN is grownA sub-well layer; controlling the temperature of the reaction chamber to be 950-1050 ℃, controlling the pressure to be 50-300 Torr, and introducing NH 3 As an N source, TMGa is introduced as a Ga source, TMAL is introduced as an Al source, and an AlGaN quantum barrier layer is grown; and repeatedly stacking the periodically grown AlGaN quantum well layer and the AlGaN quantum barrier layer.
S25, growing an electron blocking layer;
MOCVD growth is adopted, the temperature of the reaction chamber is controlled to be 1000-1100 ℃, the pressure is 100-300 Torr, and NH is introduced 3 As N source, TMGa as Ga source, TMAL as Al source, CP 2 Mg is used as a P-type dopant source.
S26, growing a P-type AlGaN layer;
MOCVD growth is adopted, the temperature of a reaction chamber is controlled to be 1000-1100 ℃, the pressure is 100-600 Torr, and NH is introduced 3 As N source, TMGa as Ga source, TMAL as Al source, CP 2 Mg is used as a P-type dopant source.
S27, growing a P-type contact layer;
MOCVD growth is adopted, the temperature of a reaction chamber is controlled to be 1000-1100 ℃, the pressure is 100-600 Torr, and NH is introduced 3 As N source, TMGa as Ga source, TMAL as Al source, CP 2 Mg is used as a P-type dopant source.
The invention is further illustrated by the following specific examples.
Example 1
The embodiment provides a light-emitting diode epitaxial wafer, which comprises a Si substrate, and a composite buffer layer, an undoped AlGaN layer, an N-type AlGaN layer, a multiple quantum well layer, an electron blocking layer, a P-type AlGaN layer and a P-type contact layer which are sequentially laminated on the Si substrate.
The composite buffer layer comprises a first sub-layer, a second sub-layer and a third sub-layer, wherein the first sub-layer comprises a YAlN layer and a ScAlN layer which are sequentially laminated, the thickness of the YAlN layer is 4nm, and the Al component ratio is 0.3; the thickness of the ScAlN layer was 6nm and the Al component ratio was 0.3. The second sub-layer comprises Si doped Ga which are laminated in sequence 2 O 3 Layer sum (AlGa) 2 O 3 Layer, si-doped Ga 2 O 3 The thickness of the layer was 4nm and the Si doping concentration was 5X 10 16 cm -3 ；(AlGa) 2 O 3 The thickness of the layer was 6nm and the Al component ratio was 0.5. The third sub-layer comprises Si sequentially laminated 3 N 4 Layer and Mg-doped BGaN layer, si 3 N 4 The thickness of the layer was 4nm; the thickness of the Mg-doped BGaN layer is 6nm, the B component ratio is 0.05, and the Mg doping concentration is 1 multiplied by 10 18 cm -3 。
The undoped AlGaN layer has a thickness of 2 μm.
The thickness of the N-type AlGaN layer is 2 μm, and the doping concentration of Si is 2.5X10 19 cm -3 。
The multi-quantum well layer is composed of AlGaN quantum well layers and AlGaN quantum barrier layers which are alternately stacked, and the cycle number is 9. The thickness of the AlGaN quantum well layer is 3.5nm, and the in component ratio is 0.45; the AlGaN quantum barrier layer had a thickness of 11nm and an Al component ratio of 0.55.
The electron blocking layer is AlGaN electron blocking layer with thickness of 30nm and Al component ratio of 0.65.
The thickness of the P-type AlGaN layer is 150nm, and the doping concentration of Mg is 5 multiplied by 10 19 cm -3 。
The P-type contact layer is AlGaN P-type contact layer with thickness of 20nm and Mg doping concentration of 1×10 20 cm -3 。
The preparation method of the LED epitaxial wafer comprises the following steps:
s1, providing a Si substrate;
and S2, sequentially growing a composite buffer layer, an undoped AlGaN layer, an N-type AlGaN layer, a multiple quantum well layer, an electron blocking layer, a P-type AlGaN layer and a P-type contact layer on the Si substrate. Specifically, S2 includes the following steps:
s21, growing a composite buffer layer; specifically, S21 includes the following steps:
s211, growing a first sub-layer;
MOCVD is adopted for growth, the temperature of the reaction chamber is controlled to be 1000 ℃, the pressure is controlled to be 200Torr, and a YAlN layer is grown; the temperature of the reaction chamber was controlled to 1000℃and the pressure was controlled to 200Torr, whereby a ScAlN layer was grown.
S212, growing a second sub-layer;
PLD growth is adopted, the temperature of the reaction chamber is controlled to be 600 ℃, and the pressure is controlled to be 10 percent -3 mbar, laserThe pulse frequency is 2.5Hz, and the laser energy density is 2J/cm 2 The target material is Ga 2 O 3 Growth of Ga by laser irradiation 2 O 3 A layer, then changing the target material into Si, irradiating with laser, and then changing the target material into Ga 2 O 3 Laser irradiation was repeated for 8 cycles to grow Si-doped Ga 2 O 3 A layer; PLD growth is adopted, the temperature of the reaction chamber is controlled to be 700 ℃, and the pressure is controlled to be 10 percent -3 mbar, laser pulse frequency of 2.5Hz, laser energy density of 2J/cm 2 The target material is Ga with the Al content of 12 atomic percent 2 O 3 Growth (AlGa) 2 O 3 A layer.
S213, growing a third sub-layer;
MOCVD growth is adopted, the temperature of the reaction chamber is controlled to be 900 ℃, the pressure is controlled to be 150Torr, and NH is introduced 3 As N source, siH is introduced 4 Growing Si as Si source 3 N 4 A layer; controlling the temperature of the reaction chamber to 900 ℃, the pressure to 100Torr, and introducing NH 3 As N source, TEB as B source, TMGa as Ga source, CP 2 Mg is used as a Mg source, and a Mg doped BGaN layer is grown.
S22, growing an undoped AlGaN layer;
MOCVD growth is adopted, the temperature of a reaction chamber is controlled to be 1200 ℃, the pressure is controlled to be 100Torr, and NH is introduced 3 As an N source, TMGa was introduced as a Ga source, and TMAl was introduced as an Al source.
S23, growing an N-type AlGaN layer;
MOCVD growth is adopted, the temperature of a reaction chamber is controlled to be 1200 ℃, the pressure is controlled to be 100Torr, and NH is introduced 3 As N source, TMGa as Ga source, TMAL as Al source, siH 4 As an N-type dopant source.
S24, growing a multi-quantum well layer;
MOCVD growth is adopted, the temperature of the reaction chamber is controlled to be 900 ℃, the pressure is controlled to be 200Torr, and NH is introduced 3 As an N source, TMGa is introduced as a Ga source, TMAL is introduced as an Al source, and an AlGaN quantum well layer is grown; controlling the temperature of the reaction chamber to 1000 ℃, the pressure to 200Torr, and introducing NH 3 As an N source, TMGa is introduced as a Ga source, TMAL is introduced as an Al source, and an AlGaN quantum barrier layer is grown; repeating layersAnd stacking the AlGaN quantum well layer and the AlGaN quantum barrier layer which are grown periodically.
S25, growing an electron blocking layer;
MOCVD is adopted for growth, the temperature of the reaction chamber is controlled to be 1050 ℃, the pressure is controlled to be 200Torr, and NH is introduced 3 As N source, TMGa as Ga source, TMAL as Al source, CP 2 Mg is used as a P-type dopant source.
S26, growing a P-type AlGaN layer;
MOCVD is adopted for growth, the temperature of the reaction chamber is controlled to be 1050 ℃, the pressure is controlled to be 200Torr, and NH is introduced 3 As N source, TMGa as Ga source, TMAL as Al source, CP 2 Mg is used as a P-type dopant source.
S27, growing a P-type contact layer;
MOCVD is adopted for growth, the temperature of the reaction chamber is controlled to be 1050 ℃, the pressure is controlled to be 200Torr, and NH is introduced 3 As N source, TMGa as Ga source, TMAL as Al source, CP 2 Mg is used as a P-type dopant source.
Example 2
The present embodiment provides a light emitting diode epitaxial wafer, which is different from embodiment 1 in that the thickness of YAlN layer in the first sub-layer is 20nm; the thickness of the ScAlN layer was 20nm. Si-doped Ga in the second sub-layer 2 O 3 The thickness of the layer was 25nm; (AlGa) 2 O 3 The thickness of the layer was 25nm. Si in the third sub-layer 3 N 4 The thickness of the layer was 30nm; the thickness of the Mg-doped BGaN layer is 30nm. The remainder was the same as in example 1.
Example 3
The present embodiment provides a light emitting diode epitaxial wafer, which is different from embodiment 2 in that the Al composition ratio in the first sub-layer gradually decreases from 0.4 to 0.3 along the epitaxial direction. The remainder was the same as in example 2.
Example 4
The present embodiment provides a light emitting diode epitaxial wafer, which is different from embodiment 3 in that (AlGa) in the second sub-layer 2 O 3 The Al composition ratio of the layer gradually increases from 0.3 to 0.6 in the epitaxial direction. The remainder was the same as in example 3.
Comparative example 1
This comparative example provides a light emitting diode epitaxial wafer, which differs from example 1 in that the composite buffer layer does not include the first sub-layer; accordingly, the preparation step of the first sub-layer is also not included in the preparation method. The remainder was the same as in example 1.
Comparative example 2
This comparative example provides a light emitting diode epitaxial wafer, which differs from example 1 in that the composite buffer layer does not include the second sub-layer; accordingly, the second sub-layer preparation step is also not included in the preparation method. The remainder was the same as in example 1.
Comparative example 3
This comparative example provides a light emitting diode epitaxial wafer, which differs from example 1 in that the composite buffer layer does not include a third sub-layer; accordingly, the preparation step of the third sub-layer is also not included in the preparation method. The remainder was the same as in example 1.
Performance test:
the light emitting diode epitaxial wafers prepared in examples 1 to 4 and comparative examples 1 to 3 were fabricated into 10mil×24mil chips and subjected to performance test with the same LED spot tester at 120mA/60mA of current, and the results are shown in table 1.
TABLE 1 results of LED Performance test
As can be seen from the table, the adoption of the composite buffer layer structure can effectively improve the luminous brightness of the LED and reduce the working voltage.
While the foregoing is directed to the preferred embodiments of the present invention, it will be appreciated by those skilled in the art that changes and modifications may be made without departing from the principles of the invention, such changes and modifications are also intended to be within the scope of the invention.
Claims (10)
1. A light-emitting diode epitaxial wafer is characterized by comprising a Si substrate and a plurality of silicon wafers sequentially laminated on the Si substrateThe composite buffer layer comprises a first sub-layer, a second sub-layer and a third sub-layer, wherein the first sub-layer comprises a YAlN layer and a ScAlN layer which are sequentially laminated, and the second sub-layer comprises a Si doped Ga which is sequentially laminated 2 O 3 Layer sum (AlGa) 2 O 3 A third sub-layer comprising Si sequentially laminated 3 N 4 A layer and a Mg doped BGaN layer.
2. The light-emitting diode epitaxial wafer of claim 1, wherein the thickness of the first sub-layer is 10 nm-40 nm, and the thickness ratio of the YAlN layer to the ScAlN layer is 1 (0.8-1.5);
the thickness of the second sub-layer is 10 nm-50 nm, and the Si is doped with Ga 2 O 3 Layer and the (AlGa) 2 O 3 The thickness ratio of the layers is 1 (0.8-1.5);
the thickness of the third sub-layer is 10 nm-60 nm, and the Si 3 N 4 The thickness ratio of the layer to the Mg-doped BGaN layer is 1 (0.8-1.5).
3. The light-emitting diode epitaxial wafer of claim 1, wherein the first sub-layer has an Al composition ratio of 0.3 to 0.4, and the Al composition ratio gradually decreases in the epitaxial direction.
4. The light-emitting diode epitaxial wafer of claim 1, wherein the Si-doped Ga 2 O 3 The Si doping concentration of the layer was 5X 10 15 cm -3 ~7×10 17 cm -3 The method comprises the steps of carrying out a first treatment on the surface of the Said (AlGa) 2 O 3 The Al component of the layer accounts for 0.3-0.6, and the Al component gradually rises along the epitaxial direction.
5. The light-emitting diode epitaxial wafer of claim 1, wherein the Mg doped BGaN layer has a Mg doping concentration of 5 x 10 17 cm -3 ~7×10 18 cm -3 The proportion of the component B is 0.01-0.1.
6. A method for preparing a light-emitting diode epitaxial wafer, which is used for preparing the light-emitting diode epitaxial wafer according to any one of claims 1 to 5, and is characterized by comprising the following steps:
providing a Si substrate, sequentially growing a composite buffer layer, an undoped AlGaN layer, an N-type AlGaN layer, a multiple quantum well layer, an electron blocking layer, a P-type AlGaN layer and a P-type contact layer on the Si substrate, wherein the composite buffer layer comprises a first sub-layer, a second sub-layer and a third sub-layer, the first sub-layer comprises a YAlN layer and a ScAlN layer which are sequentially laminated, and the second sub-layer comprises Si doped Ga which is sequentially laminated 2 O 3 Layer sum (AlGa) 2 O 3 A third sub-layer comprising Si sequentially laminated 3 N 4 A layer and a Mg doped BGaN layer.
7. The method of manufacturing a light-emitting diode epitaxial wafer according to claim 6, wherein the growth temperature of the first sub-layer is 700 ℃ to 1100 ℃ and the growth pressure is 100torr to 300torr.
8. The method for preparing a light-emitting diode epitaxial wafer according to claim 6, wherein the growth temperature of the second sub-layer is 600-800 ℃ and the growth pressure is 10% -5 mbar~10 -2 mbar。
9. The method of manufacturing a light-emitting diode epitaxial wafer according to claim 6, wherein the growth temperature of the third sub-layer is 800 ℃ to 1100 ℃ and the growth pressure is 50torr to 300torr.
10. A light emitting diode, characterized in that the light emitting diode comprises the light emitting diode epitaxial wafer according to any one of claims 1 to 5.
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| CN112750691A (en) * | 2021-01-18 | 2021-05-04 | 西安电子科技大学 | Nitrogen polar surface GaN material and homoepitaxial growth method |
| TW202247461A (en) * | 2021-02-12 | 2022-12-01 | 美商雷森公司 | Rare-earth iii-nitride n-polar hemt |
| CN117293240A (en) * | 2023-09-26 | 2023-12-26 | 江西兆驰半导体有限公司 | Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode |
| CN117613167A (en) * | 2024-01-24 | 2024-02-27 | 江西兆驰半导体有限公司 | Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode |
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| CN112750691A (en) * | 2021-01-18 | 2021-05-04 | 西安电子科技大学 | Nitrogen polar surface GaN material and homoepitaxial growth method |
| TW202247461A (en) * | 2021-02-12 | 2022-12-01 | 美商雷森公司 | Rare-earth iii-nitride n-polar hemt |
| CN117293240A (en) * | 2023-09-26 | 2023-12-26 | 江西兆驰半导体有限公司 | Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode |
| CN117613167A (en) * | 2024-01-24 | 2024-02-27 | 江西兆驰半导体有限公司 | Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode |
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