CN107689406A - A kind of deep ultraviolet LED epitaxial structure using composite electron barrier layer - Google Patents
A kind of deep ultraviolet LED epitaxial structure using composite electron barrier layer Download PDFInfo
- Publication number
- CN107689406A CN107689406A CN201610624642.8A CN201610624642A CN107689406A CN 107689406 A CN107689406 A CN 107689406A CN 201610624642 A CN201610624642 A CN 201610624642A CN 107689406 A CN107689406 A CN 107689406A
- Authority
- CN
- China
- Prior art keywords
- layer
- layers
- ultraviolet led
- deep ultraviolet
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000004888 barrier function Effects 0.000 title claims abstract description 74
- 239000002131 composite material Substances 0.000 title claims abstract description 31
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 229910017083 AlN Inorganic materials 0.000 claims description 40
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 37
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 229910016920 AlzGa1−z Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 3
- 230000005693 optoelectronics Effects 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001194 electroluminescence spectrum Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
A kind of deep ultraviolet LED epitaxial structure using composite electron barrier layer, belong to semiconductor optoelectronic subdomains.Structure of the present invention includes substrate layer, nucleating layer, AlN layers, N-type AlGaN layer, AlxGa1‑xN/AlyGa1‑yN multiple quantum well active layers, composite electron barrier layer, p-type AlGaN layer and p-type GaN layer.It is structurally characterized in that the composite electron barrier layer is divided into two layers, and it is AlN barrier layers that it, which contacts side with multiple quantum well active layer, and it is high Al contents Al that it, which contacts side with p-type AlGaN layer,zGa1‑zN barrier layers, y<z<1.Compared with the existing technology, the present invention can be effectively increased the electron-blocking capability of electronic barrier layer, and not damage the efficiency that hole is injected into active area, and deep ultraviolet LED luminous efficiency may finally be greatly improved.
Description
Technical field
The invention belongs to semiconductor optoelectronic subdomains, especially with the deep ultraviolet LED epitaxy junctions on composite electron barrier layer
Structure.
Background technology
The deep ultraviolet LED of high Al contents AlGaN epitaxial films based on high quality can be widely used in disinfection, water
With the field such as Food processing, biochemistry detection, information storage, radar detection and secure communication, market potential and application prospect are very
It is huge.
However, deep ultraviolet LED luminous efficiency is generally relatively low at present, how improving luminous efficiency, be current deep ultraviolet LED
The emphasis of extension.It has been generally acknowledged that following cause influence deep ultraviolet LED luminous efficiency：1. extend higher crystal matter outside being difficult to
The AlGaN material of amount causes internal quantum efficiency relatively low；2. the doping difficulty of high aluminium component material is larger；3. because pGaN extinctions are led
Cause deep ultraviolet LED light ejection efficiency relatively low；4. leakage current causes electron injection efficiency relatively low.
Wherein electronics, which is leaked to deep ultraviolet LED p layers region, can not only cause injection efficiency to reduce, and can also cause long wavelength
Parasitic glow peak.Then, the design of electronic barrier layer just becomes particularly important.
The content of the invention
For above-mentioned the deficiencies in the prior art, it is an object of the invention to provide one kind to use composite electron barrier layer
Deep ultraviolet LED epitaxial structure.It can be effectively increased the electron-blocking capability of electronic barrier layer, and do not damage hole and be injected into
The efficiency of source region, deep ultraviolet LED luminous efficiency may finally be greatly improved.
In order to reach foregoing invention purpose, technical scheme is realized as follows：
A kind of deep ultraviolet LED epitaxial structure using composite electron barrier layer, it includes substrate layer, nucleating layer, AlN layers, N-type
AlGaN layer, AlxGa1-xN/AlyGa1-yN multiple quantum well active layers, composite electron barrier layer, p-type AlGaN layer and p-type GaN layer.Its
It is structurally characterized in that, the composite electron barrier layer is divided into two layers, and it is AlN barrier layers that it, which contacts side with multiple quantum well active layer,
It is high Al contents Al that it, which contacts side with p-type AlGaN layer,zGa1-zN barrier layers, y<z<1.
In above-mentioned deep ultraviolet LED epitaxial structure, AlN barrier layers are that thickness is 1-20nm in the composite electron barrier layer
Undoped AlN layers, or Mg doping concentrations are 5E17 cm-3 ~5E19cm-3P-type AlN layers.
In above-mentioned deep ultraviolet LED epitaxial structure, high Al contents Al in the composite electron barrier layerzGa1-zN barrier layers
It is the p-type AlGaN barrier layers that thickness is 5-50nm, Mg doping concentrations are 1E18 cm-3 ~1E20cm-3。
In above-mentioned deep ultraviolet LED epitaxial structure, the substrate layer is using Sapphire Substrate, silicon carbide substrates, aluminium nitride
One kind in substrate or silicon substrate.
In above-mentioned deep ultraviolet LED epitaxial structure, the nucleating layer uses AlN of the thickness for 5-50nm, and the AlN layers are adopted
The undoped AlN for being 1-5 μm with thickness.
In above-mentioned deep ultraviolet LED epitaxial structure, the N-type AlGaN layer is the N-type for mixing Si that thickness is 0.5-5 μm
AlGaN, Al components therein are 0-1, and Si doping concentration is 1E18 cm-3 ~2E19cm-3。
In above-mentioned deep ultraviolet LED epitaxial structure, the AlxGa1-xN/AlyGa1-yN multiple quantum well active layers are alternately to give birth to
Long thickness is 2-6nm AlxGa1-xN potential well layers (0<x<1) Al with thickness for 5-15nmyGa1-yN barrier layers (0<y<1,x<
Y), MQW periodicity 1-10.
In above-mentioned deep ultraviolet LED epitaxial structure, the p-type AlGaN layer uses p-type AlGaN of the thickness for 10-200nm
Layer, wherein Al components are 0-1, and Mg doping concentrations are 1E18 cm-3 ~1E20cm-3。
In above-mentioned deep ultraviolet LED epitaxial structure, the p-type GaN layer is the p-type GaN contact layers that thickness is 10-200nm,
Mg doping concentrations are 5E18 cm-3 ~5E20cm-3。
The present invention compared with the existing technology has the following advantages that as a result of said structure：Stopped using composite electron
The deep ultraviolet LED epitaxial structure of layer, can effectively reduce the probability that electronics is leaked to p layers region, can be good at suppressing long wave
Long parasitic glow peak, improve electron injection efficiency.The epitaxial structure that the present invention uses may finally significantly improve deep ultraviolet LED
The luminescent properties of device.
The present invention will be further described with reference to the accompanying drawings and detailed description.
Brief description of the drawings
Fig. 1 is deep ultraviolet LED epitaxial structure schematic diagram of the present invention；
Fig. 2 is the structural representation on composite electron barrier layer in the present invention；
Fig. 3 is to compare figure using the electroluminescence spectrum on composite electron barrier layer of the present invention and conventional electrical barrier layer in embodiment.
Embodiment
Referring to Fig. 1 and Fig. 2, the present invention uses the deep ultraviolet LED epitaxial structure on composite electron barrier layer, and it includes substrate layer
1st, nucleating layer 2, AlN layers 3, N-type AlGaN layer 4, AlxGa1-xN/AlyGa1-yN multiple quantum well active layers 5, composite electron barrier layer 6,
P-type AlGaN layer 7 and p-type GaN layer 8.Composite electron barrier layer 6 is divided for two layers, and it contacts side with multiple quantum well active layer 5 and is
AlN barrier layers 601, it is high Al contents Al that it, which contacts side with p-type AlGaN layer 7,zGa1-zN barrier layers 602, y<z<1.Compound electric
AlN barrier layers 601 are the undoped AlN layers that thickness is 1-20nm in sub- barrier layer 6, or Mg doping concentrations are 5E17 cm-3
~5E19cm-3P-type AlN layers.High Al contents Al in composite electron barrier layer 6zGa1-zN barrier layers 602 are that thickness is 5-50nm
P-type AlGaN barrier layers, Mg doping concentrations are 1E18 cm-3 ~1E20cm-3.Substrate layer 1 is served as a contrast using Sapphire Substrate, carborundum
One kind in bottom, aluminium nitride substrate or silicon substrate.Nucleating layer 2 uses AlN of the thickness for 5-50nm, and the AlN layers 3 are using thick
Spend the undoped AlN for 1-5 μm.N-type AlGaN layer 4 is that thickness is 0.5-5 μm of the N-type AlGaN for mixing Si, Al components therein
For 0-1, Si doping concentration is 1E18 cm-3 ~2E19cm-3。AlxGa1-xN/AlyGa1-yN multiple quantum well active layers 5 are alternatings
The thickness of growth is 2-6nm AlxGa1-xN potential well layers (0<x<1) Al with thickness for 5-15nmyGa1-yN barrier layers (0<y<1,x
<Y), MQW periodicity 1-10.P-type AlGaN layer 7 uses p-type AlGaN layer of the thickness for 10-200nm, and wherein Al components are
0-1, Mg doping concentration are 1E18 cm-3 ~1E20cm-3.P-type GaN layer 8 be thickness be 10-200nm p-type GaN contact layers, Mg
Doping concentration is 5E18 cm-3 ~5E20cm-3。
The present invention uses the preparation method of the deep ultraviolet LED epitaxial structure on composite electron barrier layer, successively including following step
Suddenly：
1）Growing AIN nucleating layer 2：It is 600-1200 DEG C to control growth temperature, chamber pressure 50-200mbar, V/III ratio
For 100-5000, growth thickness is 5-50nm nucleating layer 2.
2）Growing AIN layer 3：It is 900-1400 DEG C to control growth temperature, chamber pressure 20-200mbar, V/III ratio
For 50-5000, growth thickness is 1-5 μm of AlN layers 3.
3）Grow N-type AlGaN contact layers 4：It is 900-1200 DEG C to control growth temperature, chamber pressure 50-
200mbar, growth thickness are 0.5-5 μm of N-type AlGaN contact layers 4, and Al components are 0-1, and Si doping concentrations are 1E18 cm-3
~2E19cm-3。
4）Grow AlxGa1-xN/AlyGa1-yN multiple quantum well active layers 5：It is 900-1200 DEG C to control growth temperature, reative cell
Pressure is 50-200mbar, and alternating growth thickness is 2-6nm AlxGa1-xN potential well layers (0<x<1) and thickness is 5-15nm's
AlyGa1-yN barrier layers (0<y<1,x<Y), MQW periodicity 1-10.
5）Growing mixed electronic barrier layer 6：It is 900-1400 DEG C to control growth temperature first, chamber pressure 20-
200mbar, V/III ratio is 50-5000, the undoped AlN barrier layers 601 or doping Mg doping concentrations that growth thickness is 1-20nm
For 5E17 cm-3 ~5E19cm-3P-type AlN barrier layers 601；Then it is 800-1200 DEG C to control growth temperature, chamber pressure
For 50-200mbar, Mg doping concentrations are 1E18 cm-3 ~1E20cm-3, growth thickness is 5-50nm high Al contents AlzGa1-zN
Barrier layer 602, y<z<1.
6）Growing P-type AlGaN layer 7：It is 800-1200 DEG C, chamber pressure 50-200mbar to control growth temperature, raw
Long thickness is 10-200nm p-type AlGaN layer 7, and Al components are 0-1, and Mg doping concentrations are 1E18 cm-3 ~1E20cm-3。
7）Growth P-type GaN layer 8：It is 800-1100 DEG C, chamber pressure 100-1000mbar to control growth temperature, raw
Long thickness is 10-200nm p-type GaN layer 8, and Mg doping concentrations are 5E18 cm-3 ~5E20cm-3。
Embodiment one：
Grow nucleating layer 2, AlN layers 3, N-type AlGaN layer 4, Al successively first on substrate layer 10.4Ga1-0.4N/Al0.5Ga0.5N is more
Mqw active layer 5, composite electron barrier layer 6, p-type AlGaN layer 7 and p-type GaN layer 8.Wherein growing mixed electronic barrier layer 6
It is divided into two steps：It is 900 DEG C to control growth temperature first, and chamber pressure 50mbar, V/III than being 50, growth thickness
For 1nm undoped AlN barrier layers 601；Then it is 800 DEG C to control growth temperature, and chamber pressure 50mbar, Mg doping is dense
Spend for 1E18 cm-3, growth thickness is 5nm high Al contents Al0.7Ga0.3N electronic barrier layers 602.
Referring to Fig. 3, deep ultraviolet LED luminescent properties are characterized using electroluminescent.As a result find, what the present invention used answers
Close electron barrier layer structure and compare conventional electrical barrier layer structure, emission wavelength all in 280nm or so, luminous intensity numerical value from
9000 increase to 12500, and parasitic impurity peaks of the peak position in 320nm substantially weaken, and illustrate the composite electron using the present invention
It barrier layer structure, can significantly improve deep ultraviolet LED luminescent properties.
Embodiment two：
Grow nucleating layer 2, AlN layers 3, N-type AlGaN layer 4, Al successively first on substrate layer 10.4Ga1-0.4N/Al0.5Ga0.5N is more
Mqw active layer 5, composite electron barrier layer 6, p-type AlGaN layer 7 and p-type GaN layer 8.Wherein growing mixed electronic barrier layer 6
It is divided into two steps：It is 1400 DEG C to control growth temperature first, and chamber pressure 200mbar, V/III than being 500, and growth is thick
Spend the AlN barrier layers 601 for 20nm；Then it is 1200 DEG C to control growth temperature, and chamber pressure 200mbar, Mg doping is dense
Spend for 1E20cm-3, growth thickness is 50nm high Al contents Al0.7Ga0.3N electronic barrier layers 602.
Embodiment three：
Grow nucleating layer 2, AlN layers 3, N-type AlGaN layer 4, Al successively first on substrate layer 10.4Ga1-0.4N/Al0.5Ga0.5N is more
Mqw active layer 5, composite electron barrier layer 6, p-type AlGaN layer 7 and p-type GaN layer 8.Wherein growing mixed electronic barrier layer 6
It is divided into two steps：It is 1400 DEG C to control growth temperature first, and chamber pressure 200mbar, V/III than being 500, and growth is thick
It is 5E17cm to spend for 1nm doping Mg doping concentrations-3AlN barrier layers 601；Then it is 1200 DEG C to control growth temperature, reaction
Chamber pressure is 200mbar, and Mg doping concentrations are 1E19cm-3, growth thickness is 50nm high Al contents Al0.6Ga0.4N electronic blockings
Layer 602.
Example IV：
Grow nucleating layer 2, AlN layers 3, N-type AlGaN layer 4, Al successively first on substrate layer 10.4Ga1-0.4N/Al0.5Ga0.5N is more
Mqw active layer 5, composite electron barrier layer 6, p-type AlGaN layer 7 and p-type GaN layer 8.Wherein growing mixed electronic barrier layer 6
It is divided into two steps：It is 1300 DEG C to control growth temperature first, and chamber pressure 100mbar, V/III than being 500, and growth is thick
It is 5E19cm to spend for 20nm doping Mg doping concentrations-3AlN barrier layers 601；Then it is 1200 DEG C to control growth temperature, reaction
Chamber pressure is 200mbar, and Mg doping concentrations are 1E20cm-3, growth thickness is 50nm high Al contents Al0.9Ga0.1N electronics hinders
Barrier 602.
Embodiment five：
Grow nucleating layer 2, AlN layers 3, N-type AlGaN layer 4, Al successively first on substrate layer 10.4Ga1-0.4N/Al0.5Ga0.5N is more
Mqw active layer 5, composite electron barrier layer 6, p-type AlGaN layer 7 and p-type GaN layer 8.Wherein growing mixed electronic barrier layer 6
It is divided into two steps：It is 1200 DEG C to control growth temperature first, and chamber pressure 50mbar, V/III than being 1000, and growth is thick
It is 5E18cm to spend for 5nm doping Mg doping concentrations-3AlN barrier layers 601；Then it is 1100 DEG C to control growth temperature, reaction
Chamber pressure is 100mbar, and Mg doping concentrations are 1E19cm-3, growth thickness is 25nm high Al contents Al0.8Ga0.2N electronics hinders
Barrier 602.
The above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations.Although with reference to the foregoing embodiments
The present invention is described in detail, one of ordinary skill in the art still can be to the skill described in foregoing embodiments
Art scheme is modified, or carries out equivalent substitution to which part technical characteristic；It is all belong to shown according to the technical program
And the modification or replacement being clear to, the essence of appropriate technical solution is departed from various embodiments of the present invention technical scheme, belong to
In protection scope of the present invention.
Claims (9)
1. a kind of deep ultraviolet LED epitaxial structure using composite electron barrier layer, it includes substrate layer（1）, nucleating layer（2）、AlN
Layer（3）, N-type AlGaN layer（4）、AlxGa1-xN/AlyGa1-yN multiple quantum well active layers（5）, composite electron barrier layer（6）, p-type
AlGaN layer（7）With p-type GaN layer（8）, it is characterised in that the composite electron barrier layer（6）It is divided into two layers, itself and MQW
Active layer（5）Contact side is AlN barrier layers（601）, itself and p-type AlGaN layer（7）Contact side is high Al contents AlzGa1-zN
Barrier layer（602）, y<z<1.
2. deep ultraviolet LED epitaxial structure as claimed in claim 1, it is characterised in that the composite electron barrier layer（6）In
AlN barrier layers（601）It is the undoped AlN layers that thickness is 1-20nm, or Mg doping concentrations are 5E17 cm-3 ~5E19cm-3P-type AlN layers.
3. deep ultraviolet LED epitaxial structure as claimed in claim 1 or 2, it is characterised in that the composite electron barrier layer（6）
Middle high Al contents AlzGa1-zN barrier layers（602）It is the p-type AlGaN barrier layers that thickness is 5-50nm, Mg doping concentrations are 1E18
cm-3 ~1E20cm-3。
4. deep ultraviolet LED epitaxial structure as claimed in claim 3, it is characterised in that the substrate layer（1）Served as a contrast using sapphire
One kind in bottom, silicon carbide substrates, aluminium nitride substrate or silicon substrate.
5. deep ultraviolet LED epitaxial structure as claimed in claim 4, it is characterised in that the nucleating layer（2）Thickness is used as 5-
50nm AlN, the AlN layers（3）Thickness is used as 1-5 μm of undoped AlN.
6. deep ultraviolet LED epitaxial structure as claimed in claim 5, it is characterised in that the N-type AlGaN layer（4）It is that thickness is
0.5-5 μm of the N-type AlGaN for mixing Si, Al components therein are 0-1, and Si doping concentration is 1E18 cm-3 ~2E19cm-3。
7. deep ultraviolet LED epitaxial structure as claimed in claim 6, it is characterised in that the lxGa1-xN/AlyGa1-yN Multiple-quantums
Trap active layer（5）It is that the thickness of alternating growth is 2-6nm AlxGa1-xN potential well layers (0<x<1) and thickness is 5-15nm's
AlyGa1-yN barrier layers (0<y<1,x<Y), MQW periodicity 1-10.
8. deep ultraviolet LED epitaxial structure as claimed in claim 7, it is characterised in that the p-type AlGaN layer（7）Using thickness
For 10-200nm p-type AlGaN layer, wherein Al components are 0-1, and Mg doping concentrations are 1E18 cm-3 ~1E20cm-3。
9. deep ultraviolet LED epitaxial structure as claimed in claim 8, it is characterised in that the p-type GaN layer（8）It is that thickness is
10-200nm p-type GaN contact layers, Mg doping concentrations are 5E18 cm-3 ~5E20cm-3。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610624642.8A CN107689406A (en) | 2016-08-03 | 2016-08-03 | A kind of deep ultraviolet LED epitaxial structure using composite electron barrier layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610624642.8A CN107689406A (en) | 2016-08-03 | 2016-08-03 | A kind of deep ultraviolet LED epitaxial structure using composite electron barrier layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107689406A true CN107689406A (en) | 2018-02-13 |
Family
ID=61150829
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610624642.8A Pending CN107689406A (en) | 2016-08-03 | 2016-08-03 | A kind of deep ultraviolet LED epitaxial structure using composite electron barrier layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107689406A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108807625A (en) * | 2018-04-24 | 2018-11-13 | 河源市众拓光电科技有限公司 | A kind of AlN buffer layer structures and preparation method thereof |
| CN109360873A (en) * | 2018-09-20 | 2019-02-19 | 华灿光电(苏州）有限公司 | A kind of GaN base light emitting epitaxial wafer and preparation method thereof |
| CN109360876A (en) * | 2018-08-31 | 2019-02-19 | 华灿光电（浙江）有限公司 | A kind of epitaxial wafer of light emitting diode and preparation method thereof |
| CN109755364A (en) * | 2019-01-14 | 2019-05-14 | 江西兆驰半导体有限公司 | A kind of novel iii-nitride light emitting devices |
| CN111029442A (en) * | 2018-10-09 | 2020-04-17 | 中国科学院苏州纳米技术与纳米仿生研究所 | III-nitride ultraviolet light emitting diode and manufacturing method thereof |
| CN111326631A (en) * | 2018-12-17 | 2020-06-23 | 财团法人工业技术研究院 | Ultraviolet C light emitting diode |
| CN112133800A (en) * | 2020-08-27 | 2020-12-25 | 西安电子科技大学 | High-efficiency light-emitting diode with p-type ScAlN layer formed based on high-temperature diffusion and preparation method |
| CN112331748A (en) * | 2020-11-27 | 2021-02-05 | 安徽中医药大学 | Epitaxial structure of light emitting diode and preparation method thereof |
| CN112397618A (en) * | 2020-11-27 | 2021-02-23 | 安徽中医药大学 | Epitaxial structure of light emitting diode and preparation method thereof |
| WO2023087543A1 (en) * | 2021-11-19 | 2023-05-25 | 华南理工大学 | Epitaxial structure of n-polar gan/algan heterojunction and preparation method therefor |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100219395A1 (en) * | 2009-02-27 | 2010-09-02 | Hideki Hirayama | Optical Semiconductor Device and Method of Manufacturing the Same |
| CN102709429A (en) * | 2012-05-23 | 2012-10-03 | 中国科学院半导体研究所 | Ultraviolet light-emitting diode chip with reflection ohmic contact electrode |
| CN103682025A (en) * | 2013-10-17 | 2014-03-26 | 武汉光电工业技术研究院有限公司 | Deep UV (Ultraviolet) diode epitaxial wafer, and deep UV diode chip and preparation method thereof |
| CN104966768A (en) * | 2015-05-28 | 2015-10-07 | 东南大学 | UV-LED with quantum dot structure |
| CN206148464U (en) * | 2016-08-03 | 2017-05-03 | 南通同方半导体有限公司 | Adopt dark purple outer LED epitaxial structure on composite electron barrier layer |
-
2016
- 2016-08-03 CN CN201610624642.8A patent/CN107689406A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100219395A1 (en) * | 2009-02-27 | 2010-09-02 | Hideki Hirayama | Optical Semiconductor Device and Method of Manufacturing the Same |
| CN102709429A (en) * | 2012-05-23 | 2012-10-03 | 中国科学院半导体研究所 | Ultraviolet light-emitting diode chip with reflection ohmic contact electrode |
| CN103682025A (en) * | 2013-10-17 | 2014-03-26 | 武汉光电工业技术研究院有限公司 | Deep UV (Ultraviolet) diode epitaxial wafer, and deep UV diode chip and preparation method thereof |
| CN104966768A (en) * | 2015-05-28 | 2015-10-07 | 东南大学 | UV-LED with quantum dot structure |
| CN206148464U (en) * | 2016-08-03 | 2017-05-03 | 南通同方半导体有限公司 | Adopt dark purple outer LED epitaxial structure on composite electron barrier layer |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108807625A (en) * | 2018-04-24 | 2018-11-13 | 河源市众拓光电科技有限公司 | A kind of AlN buffer layer structures and preparation method thereof |
| CN109360876A (en) * | 2018-08-31 | 2019-02-19 | 华灿光电（浙江）有限公司 | A kind of epitaxial wafer of light emitting diode and preparation method thereof |
| CN109360873A (en) * | 2018-09-20 | 2019-02-19 | 华灿光电(苏州）有限公司 | A kind of GaN base light emitting epitaxial wafer and preparation method thereof |
| CN111029442A (en) * | 2018-10-09 | 2020-04-17 | 中国科学院苏州纳米技术与纳米仿生研究所 | III-nitride ultraviolet light emitting diode and manufacturing method thereof |
| CN111029442B (en) * | 2018-10-09 | 2022-03-08 | 中国科学院苏州纳米技术与纳米仿生研究所 | III-nitride ultraviolet light emitting diode and manufacturing method thereof |
| US10957814B2 (en) | 2018-12-17 | 2021-03-23 | Industrial Technology Research Institute | Ultraviolet C light-emitting diode having electron blocking layers |
| CN111326631A (en) * | 2018-12-17 | 2020-06-23 | 财团法人工业技术研究院 | Ultraviolet C light emitting diode |
| CN109755364A (en) * | 2019-01-14 | 2019-05-14 | 江西兆驰半导体有限公司 | A kind of novel iii-nitride light emitting devices |
| CN112133800B (en) * | 2020-08-27 | 2021-12-21 | 西安电子科技大学 | High-efficiency light-emitting diode with p-type ScAlN layer formed based on high-temperature diffusion and preparation method |
| CN112133800A (en) * | 2020-08-27 | 2020-12-25 | 西安电子科技大学 | High-efficiency light-emitting diode with p-type ScAlN layer formed based on high-temperature diffusion and preparation method |
| CN112397618A (en) * | 2020-11-27 | 2021-02-23 | 安徽中医药大学 | Epitaxial structure of light emitting diode and preparation method thereof |
| CN112331748A (en) * | 2020-11-27 | 2021-02-05 | 安徽中医药大学 | Epitaxial structure of light emitting diode and preparation method thereof |
| WO2023087543A1 (en) * | 2021-11-19 | 2023-05-25 | 华南理工大学 | Epitaxial structure of n-polar gan/algan heterojunction and preparation method therefor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107689406A (en) | A kind of deep ultraviolet LED epitaxial structure using composite electron barrier layer | |
| CN106410005B (en) | gallium nitride based L ED epitaxial wafer and growth method thereof | |
| CN101359710B (en) | Manufacturing method of green light LED | |
| CN102820395B (en) | LED structure comprising quantum barriers with gradient potential barrier heights and method for manufacturing LED structure | |
| CN106611808B (en) | Growth method of light-emitting diode epitaxial wafer | |
| CN105990479A (en) | GaN-based light emitting diode epitaxial structure and manufacturing method thereof | |
| KR100649496B1 (en) | Nitride semiconductor light emitting device and method of manufacturing the same | |
| CN111599903B (en) | Ultraviolet LED with polarization-doped composite polar surface electron barrier layer | |
| JP2008205514A (en) | Iii-v nitride semiconductor device | |
| CN106025025A (en) | Epitaxial growth method capable of improving deep-ultraviolet LED luminous performance | |
| KR20140123410A (en) | Uv light emitting device | |
| CN105206726A (en) | LED structure and growth method thereof | |
| CN110112273A (en) | A kind of deep ultraviolet LED epitaxial structure and preparation method thereof and deep ultraviolet LED | |
| CN108831974B (en) | Light emitting diode epitaxial wafer and manufacturing method thereof | |
| CN100580966C (en) | Green light-emitting diode | |
| CN206148464U (en) | Adopt dark purple outer LED epitaxial structure on composite electron barrier layer | |
| CN106159048A (en) | Light emitting diode epitaxial wafer and growth method thereof | |
| CN109962132A (en) | LED epitaxial slice and its manufacturing method | |
| CN108091741A (en) | A kind of growing method of LED epitaxial slice | |
| CN107134514A (en) | The epitaxial wafer and its manufacture method of a kind of light emitting diode | |
| CN112382710A (en) | Deep ultraviolet LED with step-type electronic barrier layer structure and preparation method | |
| CN106876530B (en) | Epitaxial wafer of gallium nitride-based light-emitting diode and manufacturing method thereof | |
| CN115548193A (en) | Deep ultraviolet light-emitting diode and epitaxial growth method thereof | |
| KR20100052926A (en) | Light emitting diode and method for fabricating the same | |
| CN113809211A (en) | Deep ultraviolet LED with tunneling structure and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20180213 |