CN112289900B - Ultraviolet light-emitting diode epitaxial wafer and preparation method thereof - Google Patents

Ultraviolet light-emitting diode epitaxial wafer and preparation method thereof Download PDF

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CN112289900B
CN112289900B CN202010970745.6A CN202010970745A CN112289900B CN 112289900 B CN112289900 B CN 112289900B CN 202010970745 A CN202010970745 A CN 202010970745A CN 112289900 B CN112289900 B CN 112289900B
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algan
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buffer layer
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CN112289900A (en
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刘旺平
梅劲
张武斌
刘春杨
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HC Semitek Suzhou Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer

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Abstract

The disclosure provides an ultraviolet light-emitting diode epitaxial wafer and a preparation method thereof, and belongs to the technical field of light-emitting diodes. The buffer layer between the substrate and the n-type AlGaN layer is provided to include AlGaN sub-layers and SiN sub-layers which are alternately stacked. The SiN sub-layer can inhibit defects existing in the growth of the AlGaN sub-layer from further extending upwards into the n-type AlGaN layer and the GaN/AlGaN multi-quantum well layer. The AlGaN sub-layers and the SiN sub-layers are alternately laminated, stress accumulated on the AlGaN sub-layers and the SiN sub-layers at the bottom layers can be released, and stress and defects in the AlGaN sub-layers and the SiN sub-layers closest to the n-type AlGaN layer and the GaN/AlGaN multi-quantum well layer are relatively less. The quality of the n-type AlGaN layer and the GaN/AlGaN multi-quantum well layer which grow on the buffer layer is further improved, and the luminous efficiency of the finally obtained light-emitting diode is improved.

Description

Ultraviolet light-emitting diode epitaxial wafer and preparation method thereof
Technical Field
The disclosure relates to the technical field of light emitting diodes, in particular to an ultraviolet light emitting diode epitaxial wafer and a preparation method thereof.
Background
The ultraviolet light emitting diode is a light emitting product for photocuring, is commonly used for curing food sealing materials, medical glue and the like, and the ultraviolet light emitting diode epitaxial wafer is used for preparing an ultraviolet light emitting diode basic structure. The ultraviolet light emitting diode epitaxial wafer generally comprises a substrate, and an n-type AlGaN layer, a GaN/AlGaN multi-quantum well layer and a p-type AlGaN layer which are grown on the substrate.
The lattice mismatch between the AlGaN material and the substrate in the ultraviolet light emitting diode epitaxial wafer is high, and even if an AlGaN buffer layer is added between the substrate and the n-type AlGaN layer, the obtained n-type AlGaN layer and the GaN/AlGaN multi-quantum well layer have many defects, so that the quality of the finally obtained ultraviolet light emitting diode is still not good enough, and the light emitting efficiency of the ultraviolet light emitting diode is not high enough.
Disclosure of Invention
The embodiment of the disclosure provides an ultraviolet light emitting diode epitaxial wafer and a preparation method thereof, which can improve the crystal quality of an ultraviolet light emitting diode so as to finally improve the light emitting efficiency of the ultraviolet light emitting diode. The technical scheme is as follows:
the disclosed embodiment provides an ultraviolet light emitting diode epitaxial wafer, which comprises a substrate, and a buffer layer, an n-type AlGaN layer, a GaN/AlGaN multi-quantum well layer and a p-type AlGaN layer which are sequentially laminated on the substrate,
the buffer layer includes AlGaN sub-layers and SiN sub-layers which are alternately stacked.
Optionally, the substrate is a sapphire substrate, and the surface of the substrate is laminated with the AlGaN sublayer in the buffer layer.
Optionally, the thickness of the SiN sub-layer is 1-2 nm, and the thickness of the AlGaN sub-layer is 5-10 nm.
Optionally, the thickness of the buffer layer is 30-300 nm.
The embodiment of the disclosure provides a preparation method of an ultraviolet light emitting diode epitaxial wafer, which comprises the following steps:
providing a substrate;
growing a buffer layer on the substrate, wherein the buffer layer comprises AlGaN sub-layers and SiN sub-layers which are alternately grown;
growing an n-type AlGaN layer on the buffer layer;
growing a GaN/AlGaN multi-quantum well layer on the n-type AlGaN layer;
and growing a p-type AlGaN layer on the GaN/AlGaN multi-quantum well layer.
Optionally, the growing a buffer layer on the substrate includes:
introducing a Ga source, an Al source and an N source into the reaction cavity, and growing the AlGaN sublayer until the surface of the AlGaN sublayer is flat;
introducing a Si source and an N source into the reaction cavity, and growing the SiN sub layer until a natural pit is formed on the surface of the SiN sub layer;
repeating the steps to obtain the buffer layer on the substrate.
Optionally, the growing a buffer layer on the substrate includes:
the growth temperature of the buffer layer is 1100-1200 ℃.
Optionally, the substrate is a sapphire substrate, and the method for preparing the ultraviolet light emitting diode epitaxial wafer further includes:
before growing the buffer layer on the substrate, carrying out surface cleaning on the substrate;
and (3) placing the substrate with the cleaned surface in a nitrogen environment at 600-1000 ℃ for treatment until part of oxygen atoms on the surface of the sapphire substrate are replaced by nitrogen atoms.
Optionally, the substrate with the cleaned surface is placed in a nitrogen environment at 600-1000 ℃ for processing for 1-1.5 h.
Optionally, the substrate is processed in a nitrogen atmosphere with a pressure of 0to 1 torr.
The beneficial effects brought by the technical scheme provided by the embodiment of the disclosure include:
the buffer layer between the substrate and the n-type AlGaN layer is provided to include AlGaN sub-layers and SiN sub-layers which are alternately stacked. The AlGaN sublayer can stably grow on the substrate, and the SiN sublayer can inhibit defects existing in the growth of the AlGaN sublayer from further extending upwards into the n-type AlGaN layer and the GaN/AlGaN multi-quantum well layer, so that the defects existing in the n-type AlGaN layer and the GaN/AlGaN multi-quantum well layer are reduced, and the quality of the n-type AlGaN layer and the quality of the GaN/AlGaN multi-quantum well layer are improved. And the AlGaN sub-layers and the SiN sub-layers are alternately laminated, so that the stress accumulated by the AlGaN sub-layers and the SiN sub-layers at the bottom layers can be released to a certain extent, and the stress and the defects in the AlGaN sub-layers and the SiN sub-layers closest to the n-type AlGaN layer and the GaN/AlGaN multi-quantum well layer are relatively less. The AlGaN sublayer and the SiN sublayer close to the n-type AlGaN layer and the GaN/AlGaN multi-quantum well layer have good quality, and can be used as a good growth foundation of the n-type AlGaN layer and the GaN/AlGaN multi-quantum well layer, so that the quality of the n-type AlGaN layer and the GaN/AlGaN multi-quantum well layer grown on the buffer layer is further improved, and the luminous efficiency of the finally obtained light-emitting diode is improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present disclosure, and it is obvious for those skilled in the art to obtain other drawings based on the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an ultraviolet light emitting diode epitaxial wafer according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of another ultraviolet light emitting diode epitaxial wafer provided by the embodiment of the disclosure;
fig. 3 is a flowchart of an ultraviolet light emitting diode epitaxial wafer and a method for manufacturing the same according to an embodiment of the present disclosure;
fig. 4 is a flowchart of another ultraviolet light emitting diode epitaxial wafer and a manufacturing method thereof according to an embodiment of the present disclosure.
Detailed Description
To make the objects, technical solutions and advantages of the present disclosure more apparent, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.
Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The use of "first," "second," "third," and similar terms in the description and claims of the present disclosure are not intended to indicate any order, quantity, or importance, but rather are used to distinguish one element from another. Also, the use of the terms "a" or "an" and the like do not denote a limitation of quantity, but rather denote the presence of at least one. The word "comprise" or "comprises", and the like, means that the element or item listed before "comprises" or "comprising" covers the element or item listed after "comprising" or "comprises" and its equivalents, and does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", "top", "bottom", and the like are used merely to indicate relative positional relationships, which may also change accordingly when the absolute position of the object being described changes.
Fig. 1 is a schematic structural diagram of a light emitting diode epitaxial wafer according to an embodiment of the present disclosure, and as shown in fig. 1, the embodiment of the present disclosure provides an ultraviolet light emitting diode epitaxial wafer, which includes a substrate 1, and a buffer layer 2, an n-type AlGaN layer 3, a GaN/AlGaN multi-quantum well layer 4, and a p-type AlGaN layer 5 sequentially stacked on the substrate 1. The buffer layer 2 includes AlGaN sub-layers 21 and SiN sub-layers 22 alternately stacked.
The buffer layer 2 between the substrate 1 and the n-type AlGaN layer 3 is provided to include AlGaN sub-layers 21 and SiN sub-layers 22 alternately stacked. The AlGaN sublayer 21 can stably grow on the substrate 1, and the SiN sublayer 22 can suppress defects existing when the AlGaN sublayer 21 grows from extending further upward into the n-type AlGaN layer 3 and the GaN/AlGaN multi-quantum well layer 4, thereby reducing defects existing in the n-type AlGaN layer 3 and the GaN/AlGaN multi-quantum well layer 4 and improving the quality of the n-type AlGaN layer 3 and the GaN/AlGaN multi-quantum well layer 4. And the AlGaN sublayer 21 and the SiN sublayer 22 are alternately laminated, the stress accumulated in the underlying AlGaN sublayer 21 and the SiN sublayer 22 can also be released to a certain extent, so that the stress and defects in the AlGaN sublayer 21 and the SiN sublayer 22 closest to the n-type AlGaN layer 3 and the GaN/AlGaN multiple quantum well layer 4 are relatively less. The quality of the AlGaN sublayer 21 and the SiN sublayer 22 close to the n-type AlGaN layer 3 and the GaN/AlGaN multi-quantum well layer 4 is good, and thus the quality of the n-type AlGaN layer 3 and the GaN/AlGaN multi-quantum well layer 4 grown on the buffer layer 2 can be further improved, and the light emitting efficiency of the finally obtained light emitting diode can be improved.
Referring to fig. 1, the substrate 1 may be a sapphire substrate 1, and the AlGaN sublayer 21 in the buffer layer 2 is directly stacked on the surface of the substrate 1.
When the substrate 1 is a sapphire substrate 1, a good connection with most epitaxial materials can be achieved with respect to other substrates 1 such as silicon substrates 1. Because the lattice mismatch between the AlGaN sublayer 21 and the sapphire substrate 1 is smaller than that between the SiN sublayer 22 and the sapphire substrate 1, the AlGaN sublayer 21 in the buffer layer 2 is directly laminated on the surface of the substrate 1, so that lattice defects caused by lattice mismatch during growth of the buffer layer 2 can be reduced, the quality of the buffer layer 2 is improved, and the crystal quality of the n-type AlGaN layer 3 and the GaN/AlGaN multiple quantum well layer 4 grown on the buffer layer 2 is improved.
Illustratively, the buffer layer 2 has a thickness of 30 to 300 nm.
When the thickness of the buffer layer 2 is within the above range, the growth quality of the buffer layer 2 itself can be ensured to be good, and the preparation cost of the ultraviolet light emitting diode epitaxial wafer can not be excessively increased.
Optionally, the thickness of the SiN sub-layer 22 is 1-2 nm, and the thickness of the AlGaN sub-layer 21 is 5-10 nm.
The thickness of the AlGaN sublayer 21 is 5-10 nm, so that stress can be effectively released, and the AlGaN sublayer 21 with better quality is formed. The thickness of the SiN sub-layer 22 is 1-2 nm, so that defect extension can be effectively prevented, and excessive lattice defects cannot be accumulated when the SiN sub-layer 22 grows. And when the thickness of the SiN sublayer 22 is 1-2 nm, there may be areas on the surface of the SiN sublayer 22 where no complete film is formed, and thus pits are left, the AlGaN sublayer 21 with the thickness of 5-10 nm can fill up the pits, and is tightly bonded with the SiN sublayer 22, and the distribution of the stress in the AlGaN sublayer 21 is relatively uniform.
Fig. 2 is a schematic structural diagram of another ultraviolet light emitting diode epitaxial wafer according to an embodiment of the present disclosure, and as can be seen from fig. 2, in another implementation manner provided by an embodiment of the present disclosure, the ultraviolet light emitting diode epitaxial wafer may include a substrate 1, and a buffer layer 2, an undoped AlGaN layer 6, an n-type AlGaN layer 3, a GaN/AlGaN multi-quantum well layer 4, an electron blocking layer 6, a p-type AlGaN layer 5, and a p-type contact layer 7, which are sequentially stacked on the substrate 1.
Note that the structure of the buffer layer 2 shown in fig. 2 is the same as the structure of the buffer layer 2 shown in fig. 1, and details thereof are not repeated here.
Alternatively, the thickness of the undoped AlGaN layer 6 may be 0.1 to 3.0 micrometers.
The thickness of the undoped AlGaN layer 6 is proper, the cost is reasonable, and the quality of the ultraviolet light-emitting diode can be effectively improved.
Alternatively, the thickness of the n-type AlGaN layer 3 can be between 1.5 and 3.5 micrometers.
The n-type AlGaN layer 3 can provide carriers reasonably, and the quality of the n-type AlGaN layer 3 itself is also good.
Illustratively, the n-type element doped in the n-type AlGaN layer 3 may be a Si element.
Illustratively, the GaN/AlGaN multi quantum well layer 4 may be a multi quantum well structure. The GaN/AlGaN multi-quantum well layer 4 includes alternately stacked GaN layers 41 and AlxGa1-xN layer 42 of which 0<x<0.3. The luminous efficiency is better.
GaN layer 41 and AlxGa1-xThe number of N layers 42 may be the same and may range from 4 to 12. The obtained GaN/AlGaN multi-quantum well layer 4 has better quality and more reasonable cost.
Alternatively, the thickness of the GaN layer 41 may be around 3nm, AlxGa1-xThe thickness of N layer 42 may be between 8nm and 20 nm. Carriers can be efficiently trapped and light can be emitted.
Illustratively, the electron blocking layer 6 may be P-type AlyGa1-yN layer (0.2)<y<0.5), P type AlyGa1-yThe thickness of the N layer may be between 15nm and 60 nm. The effect of blocking electrons is better.
Illustratively, the P-type AlGaN layer 5 may be a P-type doped AlGaN layer. Is convenient for preparation and acquisition.
Optionally, the thickness of the p-type AlGaN layer 5 is 50-300 nm. The obtained p-type AlGaN layer 5 has good quality as a whole.
Illustratively, the p-type contact layer 7 may be a p-type GaN contact layer, and the thickness of the p-type contact layer 7 may be 10-100 nm. The quality of the p-type contact layer 7 obtained is good.
It should be noted that fig. 2 is only one implementation of the ultraviolet light emitting diode provided in the embodiment of the present disclosure, and in other implementations provided in the present disclosure, the ultraviolet light emitting diode may also be another form of ultraviolet light emitting diode including a reflective layer, which is not limited by the present disclosure.
Fig. 3 is a flowchart of a method for manufacturing an ultraviolet light emitting diode epitaxial wafer according to an embodiment of the present disclosure, and as shown in fig. 3, the method for manufacturing an ultraviolet light emitting diode epitaxial wafer includes:
s101: a substrate is provided.
S102: and growing a buffer layer on the substrate, wherein the buffer layer comprises AlGaN sub-layers and SiN sub-layers which are alternately grown.
S103: and growing an n-type AlGaN layer on the buffer layer.
S104: and growing a GaN/AlGaN multi-quantum well layer on the n-type AlGaN layer.
S105: and growing a p-type AlGaN layer on the GaN/AlGaN multi-quantum well layer.
The buffer layer between the substrate and the n-type AlGaN layer is provided to include AlGaN sub-layers and SiN sub-layers which are alternately stacked. The AlGaN sublayer can stably grow on the substrate, and the SiN sublayer can inhibit defects existing in the growth of the AlGaN sublayer from further extending upwards into the n-type AlGaN layer and the GaN/AlGaN multi-quantum well layer, so that the defects existing in the n-type AlGaN layer and the GaN/AlGaN multi-quantum well layer are reduced, and the quality of the n-type AlGaN layer and the quality of the GaN/AlGaN multi-quantum well layer are improved. And the AlGaN sub-layers and the SiN sub-layers are alternately laminated, so that the stress accumulated by the AlGaN sub-layers and the SiN sub-layers at the bottom layers can be released to a certain extent, and the stress and the defects in the AlGaN sub-layers and the SiN sub-layers closest to the n-type AlGaN layer and the GaN/AlGaN multi-quantum well layer are relatively less. The AlGaN sublayer and the SiN sublayer close to the n-type AlGaN layer and the GaN/AlGaN multi-quantum well layer have good quality, and can be used as a good growth foundation of the n-type AlGaN layer and the GaN/AlGaN multi-quantum well layer, so that the quality of the n-type AlGaN layer and the GaN/AlGaN multi-quantum well layer grown on the buffer layer is further improved, and the luminous efficiency of the finally obtained light-emitting diode is improved.
The structure of the ultraviolet light emitting diode epitaxial wafer after step S105 is performed can be seen in fig. 1.
Fig. 4 is a flowchart of another method for manufacturing an ultraviolet light emitting diode epitaxial wafer according to an embodiment of the present disclosure, and as shown in fig. 4, the method for manufacturing an ultraviolet light emitting diode epitaxial wafer includes:
s201: a substrate is provided.
Alternatively, the substrate may be a sapphire substrate.
S202: cleaning the surface of the substrate; and (3) placing the substrate with the cleaned surface in a nitrogen environment at 600-1000 ℃ for treatment until part of oxygen atoms on the surface of the sapphire substrate are replaced by nitrogen atoms.
Optionally, surface cleaning the substrate comprises:
and carrying out high-temperature heat treatment on the substrate for 10-15 minutes in a hydrogen atmosphere at the temperature of 1000-1200 ℃ in the reaction chamber. Most of the impurities present on the surface of the substrate can be removed.
Optionally, the pressure in the reaction chamber may be 150to 500Torr when performing surface cleaning on the substrate. Stable removal of impurities from the surface of the substrate can be ensured.
In step S202, the high temperature may promote the substrate surface to contact with the pure nitrogen gas, the substrate surface may be layered with a layer of nitrogen atoms, and a portion of the oxygen atoms on the substrate surface may be replaced by nitrogen atoms. The surface of the sapphire substrate with oxygen atoms replaced is closer to the lattice constant of the AlN material, and the lattice mismatch between the AlN material and the AlGaN sub-layer is smaller than that of Al2O3Lattice mismatch between the material and the AlGaN sublayer. The lattice mismatch between the surface of the sapphire substrate and the AlGaN sublayer is reduced, the defects of the AlGaN sublayer growing on the surface of the substrate are fewer, and the quality of the buffer layer is improved, so that the quality of the n-type AlGaN layer based on the buffer layer can be improved, and the quality of the finally obtained ultraviolet light-emitting diode epitaxial wafer is improved.
Illustratively, the substrate is processed for 1h to 1.5h in a nitrogen environment at a temperature of 600 ℃ to 1000 ℃.
The substrate is processed in a nitrogen environment at the temperature of 600-1000 ℃ for a long time, so that a large part of oxygen atoms can be replaced by nitrogen atoms, and the growth quality of the buffer layer is ensured.
Optionally, the substrate is processed in a nitrogen atmosphere with a pressure of 0to 1 torr.
When the pressure is 0-1 torr, the pressure in the reaction cavity is very low, and the sapphire substrate Al is in the low-pressure high-temperature environment2O3The bond energy of adjacent O-O bonds between the adjacent O-O bonds is relatively weaker, and partial O-O bonds are likely to be broken, so that oxygen atoms are replaced by nitrogen atoms, the nitrogen atoms on the surface of the sapphire substrate are further increased, the lattice mismatch between the sapphire substrate and the AlGaN sub-layer is further reduced, the AlGaN sub-layer grown on the surface of the substrate has fewer defects, the quality of the buffer layer is improved, the quality of the n-type AlGaN layer based on the buffer layer can be improved, and the quality of the finally obtained ultraviolet light-emitting diode epitaxial wafer is improved.
Can ensure that the nitrogen atoms stably and quickly replace partial oxygen atoms on the surface of the sapphire substrate.
S203: and growing a buffer layer on the substrate, wherein the buffer layer comprises AlGaN sub-layers and SiN sub-layers which are alternately grown.
Optionally, step S203, includes: introducing a Ga source, an Al source and an N source into the reaction cavity, and growing the AlGaN sublayer until the surface of the AlGaN sublayer is flat; introducing a Si source and an N source into the reaction cavity, and growing the SiN sub layer until a natural pit is formed on the surface of the SiN sub layer; repeating the above steps to obtain the buffer layer on the substrate.
When the SiN sub layer grows, the growth thickness and the growth time of the SiN sub layer can be controlled, the SiN sub layer can be incompletely formed, and when the AlGaN sub layer grows again, the AlGaN sub layer is controlled to grow until the surface is completely flat, so that pits existing on the SiN sub layer are filled. The obtained AlGaN sublayer and the SiN sublayer are combined more tightly, and the stress distribution of the AlGaN sublayer grown by the method is more uniform than that of a traditional ultraviolet light-emitting diode epitaxial wafer, so that the growth quality of a subsequent epitaxial layer can be improved, and the improvement of the light-emitting efficiency of the ultraviolet light-emitting diode is facilitated.
Step S203 may include: the growth temperature of the buffer layer is 1100-1200 ℃.
The growth temperature of the buffer layer is 1100-1200 ℃, the crystal quality of the obtained buffer layer can be effectively improved, and the defects extending from the buffer layer to the n-type AlGaN layer are reduced. Compared with the traditional mode, the buffer layer generally grows at the temperature lower than 900 ℃, and the quality of the ultraviolet light-emitting diode epitaxial wafer can be effectively improved by adopting a mode of increasing the surface roughness of the AlGaN material through low-temperature growth.
Illustratively, the growth pressure of the buffer layer can be 50-150 Torr. The growth rate of the buffer layer can be reduced by a low pressure environment, so that the buffer layer can slowly and stably grow, the uniform growth of the buffer layer is ensured, and the quality of the buffer layer is improved.
S204: and growing an undoped AlGaN layer on the buffer layer.
Optionally, the growth temperature of the undoped AlGaN layer is 1000-1200 ℃, and the pressure is 50-200 torr. The obtained undoped AlGaN layer has better quality, and the crystal quality of the finally obtained ultraviolet light-emitting diode can be improved.
Optionally, the undoped AlGaN layer is grown to a thickness of between 0.1 and 3.0 microns. The crystal quality of the finally obtained ultraviolet light emitting diode can be improved.
S205: and growing an n-type AlGaN layer on the undoped AlGaN layer.
Optionally, the n-type layer is a Si-doped n-type AlGaN layer. Easy preparation and acquisition.
Optionally, the growth temperature of the n-type AlGaN layer is 1000-1200 ℃, and the pressure is 50-200 torr. The obtained n-type AlGaN layer has better quality, and the crystal quality of the finally obtained ultraviolet light-emitting diode can be improved.
Illustratively, the n-type AlGaN layer is grown to a thickness of between 1 and 4.0 microns. The crystal quality of the finally obtained ultraviolet light emitting diode can be improved.
Illustratively, in the n-type AlGaN layer, the doping concentration of Si is 1018cm-3-1020cm-3In the meantime.
S206: and growing a GaN/AlGaN multi-quantum well layer on the n-type AlGaN layer.
Alternatively, the GaN/AlGaN multi quantum well layer may include a multi quantum well structure. The GaN/AlGaN multi-quantum well layer includes a plurality of alternately stacked GaN layers and AlxGa1-xN layer (0)<x<0.3)。
Illustratively, the growth temperature of the GaN layer ranges between 850 ℃ and 950 ℃, and the pressure ranges between 100Torr and 300 Torr; al (Al)xGa1-xThe growth temperature of the N layer is 900-1000 DEG CThe pressure is between 50Torr and 200 Torr. The GaN/AlGaN multi-quantum well layer with better quality can be obtained.
Optionally, the well thickness of the GaN layer is around 3nm and the barrier thickness is between 8nm and 20 nm. The obtained GaN/AlGaN multi-quantum well layer has good quality and reasonable cost.
S207: and growing an electron barrier layer on the GaN/AlGaN multi-quantum well layer.
Alternatively, the electron blocking layer may be p-type AlyGa1-yN layer (0.2)<y<0.5)。
Alternatively, p-type AlyGa1-yThe growth temperature of the N layer is 900-1050 ℃, and the pressure is 50-200 torr. The obtained p-type doped AlGaN layer has better quality, and the crystal quality of the finally obtained ultraviolet light-emitting diode can be improved.
Illustratively, the p-type doped AlGaN layer is grown to a thickness of between 15 and 60 nanometers. The crystal quality of the finally obtained ultraviolet light emitting diode can be improved.
S208: and growing a p-type AlGaN layer on the electron blocking layer.
Optionally, the growth temperature of the p-type AlGaN layer is 850-1050 ℃, and the pressure is 50-200 torr. The obtained p-type AlGaN layer has better quality, and the crystal quality of the finally obtained ultraviolet light-emitting diode can be improved.
Illustratively, the p-type AlGaN layer is grown to a thickness of between 100 and 300 nanometers. The crystal quality of the finally obtained ultraviolet light emitting diode can be improved.
S209: and growing a p-type contact layer on the p-type AlGaN layer.
Alternatively, the p-type contact layer may be made of p-type GaN material.
Optionally, the growth temperature of the p-type contact layer is 850-1050 ℃, and the pressure is 100-600 torr. The quality of the obtained p-type contact layer is better.
Illustratively, the p-type contact layer is grown to a thickness of between 10 and 300 nanometers. The crystal quality of the finally obtained ultraviolet light emitting diode can be improved.
S210: and annealing the light emitting diode epitaxial wafer.
Alternatively, the temperature of the annealing treatment may be 650 ℃ to 850 ℃ and the time may be 5 to 15 minutes. The thermal stress in the epitaxial wafer can be released, and the crystal quality of the obtained ultraviolet light-emitting diode is ensured.
The structure of the ultraviolet light emitting diode epitaxial wafer after step S210 is performed can be seen in fig. 2.
It should be noted that, in the embodiments of the present disclosure, a VeecoK465iorC4 orrbmcvd (metalorganic chemical vapor deposition) apparatus is used to implement the growth method of the LED. By using high-purity H2(Hydrogen) or high purity N2(Nitrogen) or high purity H2And high purity N2The mixed gas of (2) is used as a carrier gas, high-purity NH3As an N source, trimethyl gallium (TMGa) and triethyl gallium (TEGa) as gallium sources, trimethyl indium (TMIn) as indium sources, silane (SiH4) as an N-type dopant, trimethyl aluminum (TMAl) as an aluminum source, and magnesium dicylocene (CP)2Mg) as a P-type dopant.
Although the present disclosure has been described with reference to specific embodiments, it will be understood by those skilled in the art that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the disclosure.

Claims (8)

1. A preparation method of an ultraviolet light emitting diode epitaxial wafer is characterized by comprising the following steps:
providing a substrate;
growing a buffer layer on the substrate, wherein the buffer layer comprises AlGaN sub-layers and SiN sub-layers which are alternately grown;
growing an n-type AlGaN layer on the buffer layer;
growing a GaN/AlGaN multi-quantum well layer on the n-type AlGaN layer;
growing a p-type AlGaN layer on the GaN/AlGaN multi-quantum well layer;
the growing a buffer layer on the substrate includes:
introducing a Ga source, an Al source and an N source into the reaction cavity, and growing the AlGaN sublayer until the surface of the AlGaN sublayer is flat;
introducing a Si source and an N source into the reaction cavity, and growing the SiN sub layer until a natural pit is formed on the surface of the SiN sub layer;
repeating the steps to obtain the buffer layer on the substrate.
2. The method of claim 1, wherein growing a buffer layer on the substrate comprises:
the growth temperature of the buffer layer is 1100-1200 ℃.
3. The manufacturing method according to claim 1 or 2, wherein the substrate is a sapphire substrate, and the manufacturing method of the ultraviolet light emitting diode epitaxial wafer further comprises the following steps:
before growing the buffer layer on the substrate, carrying out surface cleaning on the substrate;
and (3) placing the substrate with the cleaned surface in a nitrogen environment at 600-1000 ℃ for treatment until part of oxygen atoms on the surface of the sapphire substrate are replaced by nitrogen atoms.
4. The method according to claim 3, wherein the surface-cleaned substrate is treated in a nitrogen atmosphere at 600to 1000 ℃ for 1to 1.5 hours.
5. The method of claim 3, wherein the substrate is processed in a nitrogen atmosphere at a pressure of 0to 1 torr.
6. The method according to claim 1, wherein the substrate is a sapphire substrate, and a surface of the substrate is laminated with the AlGaN sublayer in the buffer layer.
7. The method according to claim 1, wherein the SiN sub-layer has a thickness of 1to 2nm, and the AlGaN sub-layer has a thickness of 5 to 10 nm.
8. The method according to claim 1, wherein the buffer layer has a thickness of 30 to 300 nm.
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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1993837A (en) * 2004-07-29 2007-07-04 昭和电工株式会社 Positive electrode for semiconductor light-emitting device
CN105742428A (en) * 2016-02-03 2016-07-06 华灿光电(苏州）有限公司 Light-emitting diode epitaxial wafer and preparation method thereof
CN106601883A (en) * 2016-11-26 2017-04-26 华灿光电（浙江）有限公司 Epitaxial wafer of light emitting diode (LED) and preparation method of epitaxial wafer
CN106653971A (en) * 2016-11-26 2017-05-10 华灿光电（浙江）有限公司 Epitaxial wafer for GaN-based light-emitting diode, and growth method for epitaxial wafer
CN106784211A (en) * 2016-12-07 2017-05-31 华灿光电（浙江）有限公司 The epitaxial wafer and its manufacture method of a kind of GaN base light emitting
CN106784216A (en) * 2016-11-26 2017-05-31 华灿光电（浙江）有限公司 The epitaxial wafer and its growing method of a kind of GaN base light emitting
CN107978661A (en) * 2017-11-08 2018-05-01 吉林大学 A kind of nitrogen polarity blue violet light LED chip and preparation method with polarization induction p-type doped layer
CN109713097A (en) * 2018-12-28 2019-05-03 映瑞光电科技(上海)有限公司 A kind of LED epitaxial structure and preparation method thereof, LED chip

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102694053B (en) * 2011-03-22 2015-08-05 中国科学院微电子研究所 Semiconductor device and manufacture method thereof
US20190288089A9 (en) * 2015-12-28 2019-09-19 Texas Instruments Incorporated Methods for transistor epitaxial stack fabrication

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1993837A (en) * 2004-07-29 2007-07-04 昭和电工株式会社 Positive electrode for semiconductor light-emitting device
CN105742428A (en) * 2016-02-03 2016-07-06 华灿光电(苏州）有限公司 Light-emitting diode epitaxial wafer and preparation method thereof
CN106601883A (en) * 2016-11-26 2017-04-26 华灿光电（浙江）有限公司 Epitaxial wafer of light emitting diode (LED) and preparation method of epitaxial wafer
CN106653971A (en) * 2016-11-26 2017-05-10 华灿光电（浙江）有限公司 Epitaxial wafer for GaN-based light-emitting diode, and growth method for epitaxial wafer
CN106784216A (en) * 2016-11-26 2017-05-31 华灿光电（浙江）有限公司 The epitaxial wafer and its growing method of a kind of GaN base light emitting
CN106784211A (en) * 2016-12-07 2017-05-31 华灿光电（浙江）有限公司 The epitaxial wafer and its manufacture method of a kind of GaN base light emitting
CN107978661A (en) * 2017-11-08 2018-05-01 吉林大学 A kind of nitrogen polarity blue violet light LED chip and preparation method with polarization induction p-type doped layer
CN109713097A (en) * 2018-12-28 2019-05-03 映瑞光电科技(上海)有限公司 A kind of LED epitaxial structure and preparation method thereof, LED chip

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