CN107731974B - GaN-based light emitting diode epitaxial wafer and growth method thereof - Google Patents
GaN-based light emitting diode epitaxial wafer and growth method thereof Download PDFInfo
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- 230000012010 growth Effects 0.000 title claims abstract description 52
- 238000000034 method Methods 0.000 title claims abstract description 33
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 claims abstract description 17
- 230000004888 barrier function Effects 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims 1
- 230000008033 biological extinction Effects 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 229910002601 GaN Inorganic materials 0.000 description 50
- 230000000694 effects Effects 0.000 description 12
- 239000013078 crystal Substances 0.000 description 10
- 230000007547 defect Effects 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000034655 secondary growth Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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Abstract
The invention discloses a GaN-based light emitting diode epitaxial wafer and a growth method thereof, and belongs to the technical field of semiconductors. The P-type layer in the GaN-based light emitting diode epitaxial layer is grown by triethyl gallium TEGa with the flow rate of 50sccm-1000sccm in the environment that the growth temperature is 900 ℃ -1000 ℃ and the growth pressure is 700torr-760torr, the P-type layer comprises a first sublayer and a second sublayer which are sequentially stacked on a multi-quantum well layer, the first sublayer and the second sublayer are GaN sublayers doped with Mg, the doping concentration of Mg in the first sublayer is not lower than 5 multiplied by 1019cm‑3The doping concentration of Mg in the second sublayer is not less than 5 × 1020cm‑3And the thickness of the P type layer is 2nm-10 nm. The P-type layer in the invention consists of two sublayers with higher Mg doping concentration, and is in a high-temperature and high-pressure environmentUnder, help Mg to provide more holes, only need thinner P type layer can replace traditional P type layer and P type contact layer, greatly reduced the thickness of P type layer for the extinction quantity of P type layer reduces, promotes the luminous efficacy of the positive light yield and the device of chip.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of GaN base light emitting epitaxial wafer and its growth side
Method.
Background technique
LED (Light Emitting Diode, light emitting diode) is a kind of semiconductor electronic component that can be luminous.As
A kind of efficient, environmentally friendly, green New Solid lighting source, is widely applied rapidly, such as traffic lights, automobile
Inside and outside lamp, landscape light in city, cell phone back light source etc., improving chip light emitting efficiency is the target that LED is constantly pursued.
The epitaxial wafer of the LED of existing GaN base mainly includes buffer layer, N-type layer, multiple quantum well layer, the P of growth on substrate
Type layer and p-type contact layer.Wherein, multiple quantum well layer includes InGaN quantum well layer and GaN quantum barrier layer；P-type layer can be subdivided into low
Warm P-type layer, high temperature P-type layer and electronic barrier layer.Since the growth pressure of P-type layer is not above 200torr, this low-pressure growth
The crystal quality for the P-type layer that mode is grown is poor, defect concentration caused by the lattice mismatch between substrate and epitaxial wafer, Yi Jiduo
Defect concentration caused by lattice mismatch between InGaN quantum well layer in quantum well layer and GaN quantum barrier layer, can be in P-type layer
In be further magnified, to increase the leak channel between N-type layer and P-type layer, NP layers of current expansion ability dies down, breakdown
Point increases, and the antistatic effect of LED is poor, therefore, in order to guarantee the antistatic effect of LED, it will usually grow into P-type layer
Thicker thickness, such as not less than 80nm.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
Since P-type layer has the characteristic of extinction, the P-type layer not less than 80nm thickness can absorb more light, so that hair
The front amount of light of luminous diode chip is reduced, and the luminous efficiency in turn resulting in light emitting diode reduces.
Summary of the invention
In order to solve the problems, such as that the blocked up luminous efficiency that can reduce device of P-type layer thickness in the prior art, the present invention are implemented
Example provides a kind of GaN base light emitting epitaxial wafer and its growing method.The technical solution is as follows:
On the one hand, the embodiment of the invention provides a kind of GaN base light emitting epitaxial wafer, the GaN base light-emitting diodes
Pipe epitaxial wafer includes substrate and stacks gradually buffer layer, N-type layer, multiple quantum well layer and P-type layer over the substrate,
The P-type layer in the environment of growth temperature is 900 DEG C -1000 DEG C, growth pressure is 700torr-760torr,
By being grown by the triethyl-gallium TEGa that flow is 50sccm-1000sccm, the P-type layer includes being cascading in institute
The first sublayer and the second sublayer on multiple quantum well layer are stated, first sublayer and second sublayer are to adulterate the GaN of Mg
The doping concentration of sublayer, the Mg in first sublayer is not less than 5 × 1019cm-3, the doping of the Mg in second sublayer is dense
Degree is not less than 5 × 1020cm-3, the P-type layer with a thickness of 2nm-10nm.
Further, the N-type layer includes that the N-type GaN layer being cascading on the buffer layer and N-type electric current expand
Open up layer.
Further, in the N-type GaN layer doped with Si, the doping concentration of Si is 5 × 10 in the N-type GaN layer18cm-3。
Further, in the N-type current extending doped with Si, the doping concentration of Si in the N-type current extending
It is 2 × 1017cm-3。
Further, the GaN base light emitting epitaxial wafer further includes P-type electron barrier layer, the p-type electronic blocking
Layer is arranged on the multiple quantum well layer, and the P-type layer is arranged in the P-type electron barrier layer, the p-type electronic blocking
Layer is the p-type Al for mixing MgxGa1-xN layers, wherein 0 ﹤ x ﹤ 1.
On the other hand, the present invention provides a kind of growing method of GaN base light emitting epitaxial wafer, the growing methods
It include: successively grown buffer layer, N-type layer and multiple quantum well layer on substrate, the growing method further include:
In the environment of growth temperature is 900 DEG C -1000 DEG C, growth pressure is 700torr-760torr, use flow for
The triethyl-gallium TEGa growth thickness of 50sccm-1000sccm is the P-type layer of 2nm-10nm, and the P-type layer includes successively growing
The first sublayer and the second sublayer on the multiple quantum well layer, first sublayer and second sublayer are by doping Mg's
GaN is formed, and the doping concentration of the Mg in first sublayer is not less than 5 × 1019cm-3, the doping of the Mg in second sublayer
Concentration is not less than 5 × 1020cm-3。
Further, the flow of the triethyl-gallium TEGa is 600sccm.
Further, the growth pressure of the P-type layer is 760torr
Further, the growing method further include:
Before growing the P-type layer, the growing P-type electronic barrier layer on the multiple quantum well layer, the P-type layer is located at
In the P-type electron barrier layer, the P-type electron barrier layer is to mix the p-type Al of MgxGa1-xN layers, wherein 0 ﹤ x ﹤ 1.
Further, the growing method further include:
After P-type layer growth, growth temperature is adjusted to 600 DEG C~900 DEG C, under pure nitrogen gas atmosphere at annealing
Reason 10~20 minutes, and be cooled to room temperature, terminate the growth of the LED epitaxial slice.
Technical solution provided in an embodiment of the present invention has the benefit that
By the growing P-type layer under ultra-high voltage environment, can make P-type layer grows finer and close, and P-type layer uses
Triethyl-gallium TEGa provides the source Ga, can substantially reduce the content of C in triethyl-gallium TEGa under high temperature environment, be laid with crystal
More uniform, crystal quality is more preferable, and the defect concentration as caused by lattice mismatch is greatly decreased, and NP layers of current expansion ability becomes
Good, the antistatic effect of epitaxial wafer increases, meanwhile, the sublayer that P-type layer mixes Mg by two forms, and the Mg in two sublayers mixes
Miscellaneous concentration is held at a higher level, in the environment of high temperature and pressure, facilitates Mg and provides hole, to promote p-type
The concentration in hole in layer guarantees biggish capacitor between NP layers, and then guarantees the antistatic effect of epitaxial wafer, to only need relatively thin
P-type layer, that is, alternative traditional P-type layer and p-type contact layer, the thickness of P-type layer is greatly reduced, so that the extinction amount of P-type layer
It reduces, further improves the front amount of light of light-emitting diode chip for backlight unit and the luminous efficiency of light emitting diode.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram of GaN base light emitting epitaxial wafer provided in an embodiment of the present invention；
Fig. 2 is a kind of method flow of the growing method of GaN base light emitting epitaxial wafer provided in an embodiment of the present invention
Figure.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
Embodiment one
The embodiment of the invention provides a kind of GaN base light emitting epitaxial wafer, Fig. 1 is provided in an embodiment of the present invention one
The structural schematic diagram of kind of GaN base light emitting epitaxial wafer, as shown in Figure 1, the GaN base light emitting include substrate 1 and
Buffer layer 2, N-type layer 3, multiple quantum well layer 4 and the P-type layer 6 being sequentially laminated on substrate 1.Wherein, P-type layer 6 is in growth temperature
900 DEG C -1000 DEG C, growth pressure be 700torr-760torr in the environment of, by flow be 50sccm-1000sccm three second
Base gallium TEGa is grown, and P-type layer 6 includes be cascading the first sublayer 61 and the second sublayer on multiple quantum well layer 4
62, the first sublayer 61 and the second sublayer 62 are to adulterate the GaN sublayer of Mg, and the doping concentration of the Mg in the first sublayer 61 is not less than
5×1019cm-3, the doping concentration of the Mg in the second sublayer 62 is not less than 5 × 1020cm-3, P-type layer 6 with a thickness of 2nm-10nm.
By the growing P-type layer under ultra-high voltage environment, can make P-type layer grows finer and close, and P-type layer uses
Triethyl-gallium TEGa provides the source Ga, can substantially reduce the content of C in triethyl-gallium TEGa under high temperature environment, be laid with crystal
More uniform, crystal quality is more preferable, and the defect concentration as caused by lattice mismatch is greatly decreased, and NP layers of current expansion ability becomes
Good, the antistatic effect of epitaxial wafer increases, meanwhile, the sublayer that P-type layer mixes Mg by two forms, and the Mg in two sublayers mixes
Miscellaneous concentration is held at a higher level, in the environment of high temperature and pressure, facilitates Mg and provides hole, to promote p-type
The concentration in hole in layer guarantees biggish capacitor between NP layers, and then guarantees the antistatic effect of epitaxial wafer, to only need relatively thin
P-type layer, that is, alternative traditional P-type layer and p-type contact layer, the thickness of P-type layer is greatly reduced, so that the extinction amount of P-type layer
It reduces, further improves the front amount of light of light-emitting diode chip for backlight unit and the luminous efficiency of light emitting diode.
For example, the stain ratio on epitaxial wafer surface is 25% or so when growth pressure is 200Torr, work as growth pressure
When for 400Torr, the stain ratio on epitaxial wafer surface is 15%, when growth pressure is 700Torr, the stain on epitaxial wafer surface
Ratio is within 3%.Stain by observing epitaxial wafer surface is gradually reduced to vanish from sight Deng external morphologies situation, concludes
P-type layer grows finer and close.
Further, N-type layer 3 includes N-type GaN layer 31 and the N-type current extending being cascading on the buffer layer 2
32。
Preferably, in N-type GaN layer 31 doped with Si, the doping concentration of Si is 5 × 10 in N-type GaN layer 3118cm-3。
Preferably, in N-type current extending 32 doped with Si, in N-type current extending 32 doping concentration of Si be 2 ×
1017cm-3。
When realization, N-type layer 3 includes being not limited to Si doping, can also use other doping, and the thickness range of N-type layer 3 is
30nm-80nm。
Further, GaN base light emitting epitaxial wafer further includes P-type electron barrier layer 5, p-type electricity in the present embodiment
Sub- barrier layer 5 is arranged on multiple quantum well layer 4, and P-type layer 6 is arranged in P-type electron barrier layer 5, and P-type electron barrier layer 5 is
Mix the p-type Al of MgxGa1-xN layers, wherein 0 ﹤ x ﹤ 1.
In another embodiment of the invention, P-type electron barrier layer 5 can also be multilayered structure, as an example, p-type
Electronic barrier layer can be the superlattice structure of GaN and ALGaN composition.
Specifically, substrate 1 can be Sapphire Substrate, or Si substrate and SiC substrate.Buffer layer 2 can be multiple
Layer is closed, buffer layer 2 may include the low temperature buffer layer 21 and high temperature buffer layer 22 being cascading on substrate 1.Low temperature is slow
Rushing layer 21 is the GaN layer for adulterating Si element, with a thickness of 15nm-30nm, preferred thickness 20nm.High temperature buffer layer 22 is non-impurity-doped
GaN layer, with a thickness of 0.8 μm -3 μm, preferred thickness is 1.2 μm.Multiple quantum well layer 4 is the superlattice structure of multicycle, volume
Each period of sub- well layer 4 includes quantum well layer and the quantum barrier layer that grows on quantum well layer, the period of multiple quantum well layer 4
Number can be 10-15, preferably 12, and as an example, in the present embodiment, the periodicity of multiple quantum well layer 4 is 12, each
Period may include the In with a thickness of 3nm0.18Ga0.82N quantum well layer and GaN quantum barrier layer with a thickness of 10.5nm.
Embodiment two
The embodiment of the invention provides a kind of growing method of GaN base light emitting epitaxial wafer, Fig. 2 is implementation of the present invention
The method flow diagram of the growing method for a kind of GaN base light emitting epitaxial wafer that example provides, as shown in Fig. 2, the growing method
Include:
Step 201: being epitaxially grown on the substrate cache layer, N-type layer and multiple quantum well layer.
Wherein, substrate is the material for being suitble to gallium nitride and other semiconductor epitaxial Material growths, for example, gallium nitride single crystal,
Sapphire, monocrystalline silicon, single-crystal silicon carbide etc..
Specifically, buffer layer can be one or more layers (i.e. compound buffer layer).When buffer layer is compound buffer layer, delay
Rushing layer may include the low temperature buffer layer and high temperature buffer layer being cascading on substrate.As an example, low temperature is slow
The component for rushing layer can be for GaN, doped with Si in low temperature buffer layer, with a thickness of 15nm-30nm, preferred thickness 20nm, high temperature
The component of buffer layer can be the GaN that high temperature undopes, and with a thickness of 0.8 μm -3 μm, preferred thickness is 1.2 μm.
When realization, the growth temperature range of N-type layer can be 1000 DEG C -1200 DEG C, and preferably 1100 DEG C, N-type layer can be with
Including N-type GaN layer and N-type current extending, doped with impurity element, such as Si in N-type GaN layer and N-type current extending,
Wherein, the doping concentration in N-type GaN layer can be 5 × 1018cm-3, doping concentration in N-type current extending can for 2 ×
1017cm-3.As an example, the thickness of N-type layer can be between 30nm~80nm.
When realization, multiple quantum well layer is superlattice structure, each of which period may include InGaN quantum well layer and be grown in
GaN quantum barrier layer on InGaN quantum well layer, periodicity can be 10~15, preferably 12, as an example, at this
In embodiment, the period of multiple quantum well layer can be 12, and each period may include the In with a thickness of 3nm0.18Ga0.82N Quantum Well
Layer and with a thickness of 10.5nm GaN quantum barrier layer.
It should be noted that this method can also include: to carry out substrate in hydrogen atmosphere before grown buffer layer
Annealing, to clean substrate surface, annealing temperature is 1040~1180 DEG C, then carries out nitrogen treatment.
Step 202: successively growing P-type electronic barrier layer and P-type layer on multiple quantum well layer.
Wherein, the growing P-type electronic barrier layer on multiple quantum well layer, P-type electron barrier layer can be one or more layers knot
Structure.P-type electron barrier layer can be p-type AlxGa1-xN layers, wherein 0 ﹤ x ﹤ 1, as an example, and in the present embodiment, p-type
Electronic barrier layer can be p-type Al0.16Ga0.84N layers, P-type electron barrier layer is also doped with impurity element, such as Mg, doping concentration
It can be 5 × 1017cm-3。
Further, in the environment of growth temperature is 900 DEG C -1000 DEG C, growth pressure is 700torr-760torr,
Use the P-type layer that flow is 2nm-10nm for the triethyl-gallium TEGa growth thickness of 50sccm-1000sccm, P-type layer include according to
First sublayer and second sublayer of the secondary growth in P-type electron barrier layer, the first sublayer and the second sublayer are by the GaN for adulterating Mg
It forms, the doping concentration of the Mg in the first sublayer is not less than 5 × 1019cm-3, the doping concentration of the Mg in the second sublayer is not less than 5
×1020cm-3。
By the growing P-type layer under ultra-high voltage environment, can make P-type layer grows finer and close, and P-type layer uses
Triethyl-gallium TEGa provides the source Ga, can substantially reduce the content of C in triethyl-gallium TEGa under high temperature environment, be laid with crystal
More uniform, crystal quality is more preferable, and the defect concentration as caused by lattice mismatch is greatly decreased, and NP layers of current expansion ability becomes
Good, the antistatic effect of epitaxial wafer increases, meanwhile, the sublayer that P-type layer mixes Mg by two forms, and the Mg in two sublayers mixes
Miscellaneous concentration is held at a higher level, in the environment of high temperature and pressure, facilitates Mg and provides hole, to promote p-type
The concentration in hole in layer guarantees biggish capacitor between NP layers, and then guarantees the antistatic effect of epitaxial wafer, to only need relatively thin
P-type layer, that is, alternative traditional P-type layer and p-type contact layer, the thickness of P-type layer is greatly reduced, so that the extinction amount of P-type layer
It reduces, further improves the front amount of light of light-emitting diode chip for backlight unit and the luminous efficiency of light emitting diode.
Preferably, the flow of triethyl-gallium TEGa is 600sccm.
Preferably, the growth pressure of P-type layer is 700torr~760torr.
It is highly preferred that the growth pressure of P-type layer is 760torr.
Step 203: after P-type layer growth, growth temperature being adjusted to 600 DEG C~900 DEG C, is moved back under pure nitrogen gas atmosphere
Fire processing 10~20 minutes, and be cooled to room temperature, terminate the growth of GaN base light emitting epitaxial wafer.
When realization, aforementioned growth process can use MOCVD (Metal-Organic Chemical Vapor
Deposition, metallorganic chemical vapor deposition) method carries out in the reaction chamber of MOCVD.In growing P-type layer,
The pressure of the source MO (i.e. high-purity metal organic compound) bottled equipment can be set as 800torr.
It should be noted that after growing P-type electronic barrier layer, growing P in another embodiment provided by the invention
Before type layer can also growing low temperature P-type layer, low temperature P-type layer be mix the InGaN layer of Mg, and the doping concentration of Mg not less than 5 ×
1019cm-3, low temperature P-type layer with a thickness of 40nm, growth temperature is 760 DEG C, growth pressure 200torr.
The embodiment of the present invention can make P-type layer grow more to cause by the growing P-type layer under ultra-high voltage environment
It is close, and P-type layer provides the source Ga using triethyl-gallium TEGa, can substantially reduce C in triethyl-gallium TEGa under high temperature environment
Content is laid with crystal more uniform, and crystal quality is more preferable, and the defect concentration as caused by lattice mismatch is greatly decreased, NP layers
Current expansion ability improves, and the antistatic effect of epitaxial wafer increases, meanwhile, the sublayer that P-type layer mixes Mg by two forms, and two
The doping concentration of Mg in sublayer is held at a higher level, in the environment of high temperature and pressure, facilitates Mg and provides sky
Cave guarantees biggish capacitor between NP layers, and then guarantee the antistatic energy of epitaxial wafer to promote the concentration in hole in P-type layer
Power greatly reduces the thickness of P-type layer, makes to only need the i.e. alternative traditional P-type layer of relatively thin P-type layer and p-type contact layer
The extinction amount for obtaining P-type layer is reduced, and further improves the front amount of light of light-emitting diode chip for backlight unit and shining for light emitting diode
Efficiency.
Embodiment three
The embodiment of the invention provides a kind of growing methods of GaN base light emitting epitaxial wafer, in the present embodiment, N
Type layer includes high temperature N-type GaN layer and high temperature N-type GaN current extending, and the growth temperature of high temperature N-type GaN layer is 1100 DEG C, Si
Doping concentration be 5 × 1018cm-3, the growth temperature of high temperature N-type GaN current extending is 1100 DEG C, the doping concentration of Si is 2
×1017cm-3, multiple quantum well layer is the In by 12 3nm0.18Ga0.82The GaN quantum barrier layer of N quantum well layer and 12 10.5nm
The multi layer quantum well being combined into, P-type electron barrier layer are p-type Al0.16Ga0.84N layers, wherein the doping concentration of Mg is 5 × 1017cm-3, P-type layer is to mix the GaN layer of Mg, and the concentration of first segment Mg doping is 5 × 1019cm-3, second segment Mg doping concentration be 5 ×
1020cm-3, the flow of growth pressure 600torr, TEGa are 600sccm, and the pressure of the bottled equipment in the source MO is 800torr.
After the growth for terminating epitaxial wafer, continues to clean epitaxial wafer, deposit, the semiconducter process such as photoetching
LED chip of the single chip having a size of 10 × 27mil is made, the result obtained after testing the LED chip are as follows: test electricity
Stream is 120mA, operating voltage 3.09V, brightness 204mw, 4KV antistatic effect are 92%, the extension with conventional LED chips
(it for the pressure of the bottled equipment in the source 90sccm, MO is 800torr that i.e. P-type layer uses the flow of 300torr, TMGa to piece, other growths
The epitaxial wafer grown under conditions of condition is all the same) it compares, wherein the test result of conventional LED chips are as follows: testing electric current is
60mA, operating voltage 3.09V, brightness 200mw, 4KV antistatic effect are 88%, and LED chip shines in the present embodiment
Efficiency improves 2%, and antistatic effect is increased to the 92% of 4KV by the 88% of 4KV.
Example IV
The embodiment of the invention provides a kind of growing method of GaN base light emitting epitaxial wafer, cache layer therein, N
Type layer, multiple quantum well layer, P-type electron barrier layer are with embodiment three, and difference with embodiment two is only that P-type layer
Growth pressure becomes 760torr, and the flow of TEGa is adjusted to 500sccm.
Equally, after the growth for terminating epitaxial wafer, continue to clean epitaxial wafer, deposit, the semiconductors such as photoetching add
LED chip of the single chip having a size of 10 × 27mil is made in work technique, carries out and identical item in embodiment three to the LED chip
The test of part, obtained result are as follows: test electric current be 120mA, operating voltage 3.08V, the antistatic energy of brightness 207mw, 4KV
Power is 94%, and compared with the epitaxial wafer of conventional LED chips, the luminous efficiency of LED chip improves 3.5% in the present embodiment, is resisted
Electrostatic capacity is increased to the 94% of 4KV by the 88% of 4KV.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of GaN base light emitting epitaxial wafer, the GaN base light emitting epitaxial wafer includes substrate and successively layer
Folded buffer layer, N-type layer, multiple quantum well layer and P-type layer over the substrate, which is characterized in that
The P-type layer is in the environment of growth temperature is 900 DEG C -1000 DEG C, growth pressure is 700torr-760torr, by flowing
Amount is that the triethyl-gallium TEGa of 50sccm-1000sccm is grown, and the P-type layer includes being cascading in the volume
The first sublayer and the second sublayer in sub- well layer, first sublayer and second sublayer are to adulterate the GaN sublayer of Mg, institute
The doping concentration of the Mg in the first sublayer is stated not less than 5 × 1019cm-3, the doping concentration of the Mg in second sublayer is not less than
5×1020cm-3, the P-type layer with a thickness of 2nm-10nm.
2. GaN base light emitting epitaxial wafer according to claim 1, which is characterized in that the N-type layer includes successively layer
The folded N-type GaN layer being arranged on the buffer layer and N-type current extending.
3. GaN base light emitting epitaxial wafer according to claim 2, which is characterized in that adulterated in the N-type GaN layer
There is Si, the doping concentration of Si is 5 × 10 in the N-type GaN layer18cm-3。
4. GaN base light emitting epitaxial wafer according to claim 2, which is characterized in that in the N-type current extending
Doped with Si, the doping concentration of Si is 2 × 10 in the N-type current extending17cm-3。
5. GaN base light emitting epitaxial wafer according to claim 1-4, which is characterized in that the GaN base hair
Optical diode epitaxial wafer further includes P-type electron barrier layer, and the P-type electron barrier layer is arranged on the multiple quantum well layer, and
The P-type layer is arranged in the P-type electron barrier layer, and the P-type electron barrier layer is to mix the p-type Al of MgxGa1-xN layers,
In, 0 ﹤ x ﹤ 1.
6. a kind of growing method of GaN base light emitting epitaxial wafer, the growing method includes: that successively growth is slow on substrate
Rush layer, N-type layer and multiple quantum well layer, which is characterized in that the growing method further include:
In the environment of growth temperature is 900 DEG C -1000 DEG C, growth pressure is 700torr-760torr, use flow for
The triethyl-gallium TEGa growth thickness of 50sccm-1000sccm is the P-type layer of 2nm-10nm, and the P-type layer includes successively growing
The first sublayer and the second sublayer on the multiple quantum well layer, first sublayer and second sublayer are by doping Mg's
GaN is formed, and the doping concentration of the Mg in first sublayer is not less than 5 × 1019cm-3, the doping of the Mg in second sublayer
Concentration is not less than 5 × 1020cm-3。
7. growing method according to claim 6, which is characterized in that the flow of the triethyl-gallium TEGa is 600sccm.
8. according to the described in any item growing methods of claim 6-7, which is characterized in that the growth pressure of the P-type layer is
760torr。
9. according to the described in any item growing methods of claim 6-7, which is characterized in that the growing method further include:
Before growing the P-type layer, the growing P-type electronic barrier layer on the multiple quantum well layer, the P-type layer is located at described
In P-type electron barrier layer, the P-type electron barrier layer is to mix the p-type Al of MgxGa1-xN layers, wherein 0 ﹤ x ﹤ 1.
10. according to the described in any item growing methods of claim 6-7, which is characterized in that the growing method further include:
After P-type layer growth, growth temperature is adjusted to 600 DEG C~900 DEG C, makes annealing treatment 10 under pure nitrogen gas atmosphere
~20 minutes, and be cooled to room temperature, terminate the growth of the GaN base light emitting epitaxial wafer.
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| CN109638129B (en) * | 2018-12-11 | 2021-04-27 | 宁波安芯美半导体有限公司 | Preparation method of light emitting diode epitaxial structure |
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| CN114300590B (en) * | 2021-12-28 | 2024-02-23 | 淮安澳洋顺昌光电技术有限公司 | Light-emitting diode and preparation method thereof |
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