CN106784184A - LED epitaxial structure of recombination P-type GaN layer and preparation method thereof - Google Patents
LED epitaxial structure of recombination P-type GaN layer and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 230000006798 recombination Effects 0.000 title claims abstract description 9
- 238000005215 recombination Methods 0.000 title claims abstract description 9
- 230000004888 barrier function Effects 0.000 claims description 32
- 239000012298 atmosphere Substances 0.000 claims description 31
- 230000012010 growth Effects 0.000 claims description 30
- 229910002704 AlGaN Inorganic materials 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 17
- 229910052749 magnesium Inorganic materials 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 238000005036 potential barrier Methods 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 claims 2
- 239000002019 doping agent Substances 0.000 abstract description 7
- 230000007246 mechanism Effects 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- 238000002156 mixing Methods 0.000 abstract description 2
- 239000011777 magnesium Substances 0.000 description 59
- 230000026267 regulation of growth Effects 0.000 description 9
- 230000004913 activation Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000010276 construction Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000037230 mobility Effects 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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Abstract
LED epitaxial structure the invention provides recombination P-type GaN layer and preparation method thereof, the p-type GaN layer of the LED epitaxial structure specifically includes successively：First p-type GaN layer, thickness is 40~80nm；Second p-type GaN layer, thickness is 30~70nm；3rd p-type GaN layer, thickness is 4 10nm.Method of the application p-type GaN layer structure by mixing N-shaped and P-type dopant simultaneously, plays two effects：Increase the solubility (reducing the formation energy of dopant) of dopant to suppress self-compensation mechanism；Acceptor level is reduced to lift activity ratio；Suppress the self-compensation mechanism of p-type GaN layer well so as to play, lift hole concentration, reach the luminous efficiency and electrical purpose of lifting GaN device.
Description
Technical field
The present invention relates to technical field of semiconductor illumination, especially, it is related to a kind of LED epitaxial structure of recombination P-type GaN layer
And preparation method thereof.
Background technology
GaN light emitting diodes (LED) as it is a kind of efficiently, environmental protection and green New Solid lighting source, with small volume,
Lightweight, long lifespan, reliability are high and are widely used in outdoor display screen, car light, traffic signals using the low characteristic of power consumption
The fields such as lamp, Landscape Lighting, backlight.
Make GaN device and all refer to doping problem, GaN mixes Si can be easily achieved N-shaped, and electron concentration reaches 1015
~1020cm3, room temperature mobilities are more than 300cm2/V·s.But p-type mixes Mg many problems can in process of production occurs, hole is dense
Degree only 1017~1018cm3, mobility is less than 10cm2/ Vs, doping efficiency only has 0.1%~1%, it is impossible to meet device very well
Part requirement.It is generally acknowledged that hindering the principal element of GaN device development：One is passivation of the H atom to Mg, two be Mg itself compared with
Ionization energy high, three is the self-compensation mechanism of background donor concentration high.H atom was once restriction p-type GaN to the passivation of Mg
The technical barrier of doping, rapid thermal annealing activation GAN layers of technology of p-type successfully breaches the technical barrier.
So, during with the p-type GaN of MOCVD technology growths, on the one hand reducing acceptor Mg atoms has acceptor activation very high
Can, on the other hand during highly doped Mg, reduce p-type GaN and there is intrinsic alms giver's self-compensation mechanism.As how improving p-type GAN layers of GaN
The hole concentration of structure, is the key for improving LED component luminous efficiency, be also at present research GaN base LED chip another is important
Problem.
The content of the invention
Present invention aim at a kind of LED epitaxial structure of recombination P-type GaN layer and preparation method thereof is provided, to solve p-type
The GAN layers of hole concentration of GaN structures technical problem not high.
To achieve the above object, the invention provides a kind of preparation method of the LED epitaxial structure of recombination P-type GaN layer, according to
It is secondary to be hindered including treatment substrate, grown buffer layer, growth u-shaped GaN layer, growing n-type GaN layer, growth MQW active layers, growth electronics
Barrier, growth P-type GaN layer step, wherein, growth P-type GaN layer step specifically includes following steps：
B1, chamber pressure are 400-700mbar, and temperature is 1000-1070 DEG C, N2Under atmosphere, on electronic barrier layer
The first p-type GaN layer of low Mg doping concentrations is grown,
B2, chamber pressure are constant, and temperature is 1070-1140 DEG C, H2And N2Under mixed atmosphere, in obtained by step B1
In one p-type GaN layer, the p-type GaN of Mg and Si codopes is grown as the second p-type GaN layer,
B3, chamber pressure are 200-400mbar, and temperature and atmosphere are constant, in the second p-type GaN layer obtained by step B2
On, the p-type GaN of Mg doping concentrations high is grown as the 3rd p-type GaN layer.
Preferably, growth electronic barrier layer step specifically includes following steps：
A1, growth temperature are 860-920 DEG C, and the p-type AlGaN layer of Mg is mixed in growth on MQW active layers, used as barrier layer；
A2, keeping temperature are constant, and In type GaN layers are grown in p-type AlGaN layer as potential well layer；
Step A1 and A2 are repeated cyclically.
Preferably, the p-type AlGaN/InGaN superlattices electronic barrier layer Mg concentration is higher than in the first p-type GaN layer
The concentration comparable of Mg in the concentration of Mg, with the second p-type GaN layer.
Preferably, the concentration of Mg is less than the concentration of Mg in the second p-type GaN layer in the first p-type GaN layer；It is described
Concentration of the concentration of Mg less than Mg in the 3rd p-type GaN layer in second p-type GaN layer.
Preferably, in step B2, the doping concentration of acceptor Mg is 2.5 × 1020~5 × 1020atoms/cm3, the Si of alms giver
Doping concentration is 1.5 × 1016~5 × 1016atoms/cm3。
Preferably, in step B1, it is 5.17 × 10 to be passed through molar concentration7mol/min-5.17×106The Cp of mol/min2Mg
Source is used as Mg doped sources；
In step B2, it is 1.14 × 10 to be passed through molar concentration5mol/min-1.97×105The Cp of mol/min2The conduct of Mg sources
Mg doped sources, while it is the SiH of 200ppm for 0.01-0.15ml/min concentration to be passed through flow4As Si doped sources；
In step B3, it is 8.8 × 10 to be passed through molar concentration6mol/min-1.29×105The Cp of mol/min2Mg sources are used as Mg
Doped source.
Preferably, the concentration of Mg is 7 × 10 in the p-type AlGaN/InGaN superlattices electronic barrier layers19~1.5 ×
1020atoms/cm3；The p-type AlGaN/InGaN superlattices electronic barrier layers thickness is 40~80nm.
Preferably, the step A1 and A2 numbers of repetition are 4-8 times.
The LED epitaxial structure according to obtained in above-mentioned preparation method, successively including substrate, cushion, u-shaped GaN layer, N-shaped
GaN layer, MQW active layers, electronic barrier layer, p-type GaN layer, wherein, p-type GaN layer specifically includes successively：
First p-type GaN layer, thickness is 40~80nm, and the concentration of Mg is 8 × 1018~1.5 × 1019atoms/cm3；
Second p-type GaN layer, thickness is 30~70nm, and the concentration of Mg is 7 × 1019~1 × 1020atoms/cm3；
3rd p-type GaN layer, thickness is 4-10nm, and the concentration of Mg is 2.5 × 1020~5 × 1020atoms/cm3。
Preferably, in the p-type AlGaN/InGaN superlattices electronic barrier layers, p-type AlGaN potential barriers described in signal period
The thickness of layer is 2.8-5nm, and p-type InGaN potential well layers thickness described in signal period is 2.5-4nm.
The invention has the advantages that：
The present invention provides a kind of preparation method and its LED epitaxial structure of new p-type GaN structures, this p-type GaN layer knot
The codoping method that structure passes through incorporation N-shaped and P-type dopant simultaneously, i.e., mix Si and Mg, Si and Mg be co-doped with simultaneously in p-type GaN layer
Two effects can be played：1) increase the solubility (reducing the formation energy of dopant) of dopant to suppress self-compensation mechanism；2)
Acceptor level is reduced to lift activity ratio；Fermi level is improved by mixing Si alms giver in p-type GaN layer, while improving N rooms
Energy is formed, allows Mg-VN complexs not allow to be also easy to produce, suppress the self-compensation mechanism of p-type GaN layer well so as to play, reached and carry
Rise hole concentration, the luminous efficiency and electrical purpose of final lifting GaN device.
Specifically, highly doped Mg concentration of P type AlGaN/InGaN superlattices electronic barrier layer, p-type AlGaN potential barrier hinder
Hole is escaped and p-type InGaN potential well layers are by bound hole and to improve the sky of p-type AlGaN/InGaN superlattices electronic barrier layers
Cave concentration, luminous efficiency purpose is improved so as to reach.By being co-doped with for the second p-type GaN layer highly doped acceptor Mg and low-mix alms giver Si,
The second P-type layer fermi level is improved by being co-doped with Mg and Si, while improving N vacancy formation energies, allows Mg-VN complexs to be not easy
Produce, suppress the self-compensation mechanism of p-type GaN layer well so as to play, lift P-type layer hole concentration.In addition, appropriate Si doping
Reduce the P-type layer resistance；So as to play improving luminous efficiency and reduce GaN device voltage purpose.In addition, highly doped p-type
AlGaN/InGaN superlattices electronic barrier layers, low-mix the first p-type GaN layer, Mg and Si is co-doped with the second p-type GaN layer up of three layers U
Type doped structure, one side low-mix p-type GaN layer hole mobility is larger, for hole diffusion provides power-assisted, improves hole migration
Rate, so as to improve luminous efficiency；On the other hand highly doped p-type AlGaN/InGaN superlattices electronic barrier layer and Mg and Si are co-doped with
Two p-type GaN layers constitute p-type capacitance type structure with the first p-type of low-mix GaN layer, and the impact to high-pressure electrostatic serves dispersion, buffering
Effect, so as to improve the antistatic effect of GaN base LED component.
In addition to objects, features and advantages described above, the present invention also has other objects, features and advantages.
Below with reference to figure, the present invention is further detailed explanation.
Brief description of the drawings
The accompanying drawing for constituting the part of the application is used for providing a further understanding of the present invention, schematic reality of the invention
Apply example and its illustrate, for explaining the present invention, not constitute inappropriate limitation of the present invention.In the accompanying drawings：
Fig. 1 shows the cross-sectional view of existing LED；
Fig. 2 shows the embodiment of the present invention with common p-type GaN layer brightness contrast figure；
Fig. 3 shows the embodiment of the present invention with common p-type GaN layer voltage-contrast figure.
Wherein, 1, substrate, 2, cushion, 3, u-shaped GaN layer, 4, n-type GaN layer, 5, MQW active layers, 6, electronic barrier layer,
7th, the first p-type GaN layer, the 8, second p-type GaN layer, the 9, the 3rd p-type GaN layer.
Specific embodiment
Embodiments of the invention are described in detail below in conjunction with accompanying drawing, but the present invention can be limited according to claim
Fixed and covering multitude of different ways is implemented.
For the ease of description, space relative terms can be used herein, such as " ... on ", " ... top ",
" in ... upper surface ", " above " etc., for describing such as a device shown in the figure or feature and other devices or spy
The spatial relation levied.It should be appreciated that space relative terms are intended to comprising the orientation except device described in figure
Outside different azimuth in use or operation.If for example, the device in accompanying drawing is squeezed, be described as " in other devices
To be positioned as " under other devices or construction after the device of part or construction top " or " on other devices or construction "
Side " or " under other devices or construction ".Thus, exemplary term " ... top " can include " ... top " and
" in ... lower section " two kinds of orientation.The device can also other different modes positioning (being rotated by 90 ° or in other orientation), and
And respective explanations are made to the relative description in space used herein above.
Term p-type GaN layer refers to doping Mg or doping Al or the GaN for being formed after doping Mg and Al simultaneously in the present invention
Layer；Term N-type GaN layer refers to the GaN layer of formation after doping Si；The U-shaped GaN layer of term refers to the GaN layer of undoped p.
Referring to Fig. 1, a kind of preparation method of the LED epitaxial structure of recombination P-type GaN layer grows GaN epitaxy with MOCVD
Layer, using high-purity H2Or high-purity N2Or H2And N2Mixed gas are used as carrier gas, high-purity N H3As N sources, metal organic source trimethyl gallium
(TMGa) as gallium source, used as indium source, P-type dopant is two luxuriant magnesium (Cp to trimethyl indium (TMIn)2Mg), substrate is pattern substrate
Or Sapphire Substrate, reaction pressure is between 100mbar to 850mbar.
The method is comprised the following steps：
1st, substrate 1 is processed：Temperature is risen to 1230-1280 DEG C, by substrate processing 4-8min；
2nd, grown buffer layer 2：520-590 DEG C is cooled the temperature to, in H2It is thick in above-mentioned substrate growth 20-35nm under atmosphere
Cushion；
3rd, growth u-shaped GaN layer 3：Reaction chamber temperature is risen to 1160-1280 DEG C, in H2Under atmosphere, in above-mentioned cushion
The u-shaped GaN layer of upper growth 2-3.5 μ m-thicks；
4th, growing n-type GaN layer 4：Reaction chamber temperature is risen to 1240-1290 DEG C, chamber pressure is 500-650mbar,
In H2Under atmosphere, the n-type GaN layer of 2-3.5 μ m-thicks is grown in above-mentioned u-shaped GaN layer, the doping concentration of Si is 8 × 1018~
1.5×1019atoms/cm3；
5th, growth MQW active layers 5：Reaction chamber temperature is down to 800-970 DEG C, in N2Under atmosphere, in above-mentioned N-shaped GaN
MQW active layers are grown on layer；MQW active layers are by InGaN well layer and GaN the barrier layer MQW that periodically superposition growth is constituted
Structure, wherein In types GaN layer thickness are 2-3.5nm, and GaN thickness is 8-13nm, and the circulating cycle issue of superposition is 11-18；
6th, growing P-type AlGaN/InGaN superlattices electronic barrier layer 6:Reaction chamber temperature is risen to 860-950 DEG C, in N2
Under atmosphere, it is 1.03 × 10 to be passed through molar concentration5-1.86×105The Cp of mol/min2Mg sources as Mg doped sources, above-mentioned
Growing P-type AlGaN/InGaN superlattices electronic barrier layers on MQW active layers；
7th, the p-type GaN layer 7 of growth regulation one：Reaction chamber temperature is risen to 1000-1070 DEG C, in N2Under atmosphere, chamber pressure
It is 400-700mbar, it is 5.17 × 10 to be passed through molar concentration7mol/min-5.17×106The Cp of mol/min2Mg mixes in source as Mg
Miscellaneous source, grows 40-80nm the first p-type GaN layers of thickness on above-mentioned MQW active layers；
8th, the p-type GaN layer 8 of growth regulation two：Reaction chamber temperature is risen to 1070-1140 DEG C, chamber pressure is 400-
700mbar, in H2And N2Under mixed atmosphere, it is 1.14 × 10 to be passed through molar concentration5mol/min-1.97×105Mol/min's
Cp2Mg sources are used as Mg doped sources, while it is the SiH of 200ppm for 0.01-0.15ml/min concentration to be passed through flow4Adulterated as Si
Source；The second thick p-type GaN layers of 30-70nm are grown in the first above-mentioned p-type GaN layer；
9th, the p-type GaN layer 9 of growth regulation three：Holding reaction chamber temperature is constant, and chamber pressure is 200-400mbar, in H2With
N2Under mixed atmosphere, it is 8.8 × 10 to be passed through molar concentration6mol/min-1.29×105The Cp of mol/min2Adulterated as Mg in Mg sources
Source；The 3rd thick p-type GaN layers of 4-10nm are grown in the second above-mentioned p-type GaN layer；
10th, contact layer is grown：Reaction chamber temperature is down to 750-820 DEG C, chamber pressure is 100-300mbar, in N2
Under atmosphere, the thick InGaN contact layers of 3-6nm are grown in the 3rd above-mentioned p-type GaN layer；
11st, anneal：600~750 DEG C are cooled the temperature to, chamber pressure is 300-500mbar, in N2Under atmosphere, activation
5~20min of time.
Embodiment 1
The present embodiment is comprised the following steps that：
1st, substrate processing：Temperature is risen to 1230-1250 DEG C, by substrate processing 4-8min；
2nd, grown buffer layer：520-550 DEG C is cooled the temperature to, in H2Under atmosphere, thick in above-mentioned substrate growth 20-25nm
Cushion；
3rd, u-shaped GaN layer is grown：Reaction chamber temperature is risen to 1160-1180 DEG C, in H2Under atmosphere, in above-mentioned cushion
The u-shaped GaN layer of upper growth 3-3.5 μ m-thicks；
4th, growing n-type GaN layer：Reaction chamber temperature is risen to 1240-1260 DEG C, chamber pressure is 550-600mbar,
H2Under atmosphere, the n-type GaN layer of 3-3.5 μ m-thicks is grown in above-mentioned u-shaped GaN layer, the doping concentration of Si is 8 × 1018~1.1
×1019atoms/cm3；
5th, MQW active layers are grown：Reaction chamber temperature is down to 900-970 DEG C, in N2Under atmosphere, in above-mentioned n-type GaN layer
Upper growth MQW active layers；MQW active layers are by InGaN well layer and GaN barrier layer the MQW knot that periodically superposition growth is constituted
Structure, wherein In types GaN layer thickness are 2-2.5nm, and GaN thickness is 9-11nm, and the circulating cycle issue of superposition is 11-18；
6th, growing P-type AlGaN/InGaN superlattices electronic barrier layer:Reaction chamber temperature is risen to 860-900 DEG C, in N2Gas
Under atmosphere, it is 1.1 × 10 to be passed through molar concentration5-1.55×105The Cp of mol/min2Mg sources as Mg doped sources, in above-mentioned MQW
Growing P-type AlGaN/InGaN superlattices electronic barrier layers on active layer；
7th, the p-type GaN layer of growth regulation one：Reaction chamber temperature is risen to 1000-1040 DEG C, in N2Under atmosphere, chamber pressure
It is 400-700mbar, it is 5.17 × 10 to be passed through molar concentration7mol/min-3.17×108The Cp of mol/min2Mg mixes in source as Mg
Miscellaneous source, grows 40-60nm the first p-type GaN layers of thickness on above-mentioned MQW active layers；
8th, the p-type GaN layer of growth regulation two：Reaction chamber temperature is risen to 1070-1140 DEG C, chamber pressure is 600-
700mbar, in H2And N2Under mixed atmosphere, it is 1.14 × 10 to be passed through molar concentration5mol/min-1.67×105Mol/min's
Cp2Mg sources are used as Mg doped sources, while it is the SiH of 200ppm for 0.08-0.11ml/min concentration to be passed through flow4Adulterated as Si
Source；The second thick p-type GaN layers of 40-50nm are grown in the first above-mentioned p-type GaN layer；
9th, the p-type GaN layer of growth regulation three, holding reaction chamber temperature is constant, and chamber pressure is 200-400mbar, in H2And N2
Under mixed atmosphere, it is 8.8 × 10 to be passed through molar concentration6mol/min-1.05×107The Cp of mol/min2Adulterated as Mg in Mg sources
Source；The 3rd thick p-type GaN layers of 6-8nm are grown in the second above-mentioned p-type GaN layer；
10th, contact layer is grown：Reaction chamber temperature is down to 780-820 DEG C, chamber pressure is 100-300mbar, in N2
Under atmosphere, the thick InGaN contact layers of 3-6nm are grown in the 3rd above-mentioned p-type GaN layer；
11st, anneal：600~750 DEG C are cooled the temperature to, chamber pressure is 300-500mbar, in N2Under atmosphere, activation
5~20min of time.
Comparative example 1
This comparative example's comprises the following steps that：
1st, substrate processing：Temperature is risen to 1230-1250 DEG C, by substrate processing 4-8min；
2nd, grown buffer layer：520-550 DEG C is cooled the temperature to, under H2 atmosphere, thick in above-mentioned substrate growth 20-25nm
Cushion；
3rd, u-shaped GaN layer is grown：Reaction chamber temperature is risen to 1160-1180 DEG C, under H2 atmosphere, in above-mentioned cushion
The u-shaped GaN layer of upper growth 3-3.5 μ m-thicks；
4th, growing n-type GaN layer：Reaction chamber temperature is risen to 1240-1260 DEG C, chamber pressure is 550-600mbar,
Under H2 atmosphere, the n-type GaN layer of 3-3.5 μ m-thicks is grown in above-mentioned u-shaped GaN layer, the doping concentration of Si is 8 × 1018~1.1
×1019atoms/cm3；
5th, MQW active layers are grown：Reaction chamber temperature is down to 900-970 DEG C, under N2 atmosphere, in above-mentioned n-type GaN layer
Upper growth MQW active layers；MQW active layers are by InGaN well layer and GaN barrier layer the MQW knot that periodically superposition growth is constituted
Structure, wherein In types GaN layer thickness are 2-2.5nm, and GaN thickness is 9-11nm, and the circulating cycle issue of superposition is 11-18；
6th, growing P-type AlGaN/InGaN superlattices electronic barrier layer:Reaction chamber temperature is risen to 860-900 DEG C, in N2 gas
Under atmosphere, it is 1.1 × 10 to be passed through molar concentration5-1.55×105The Cp2Mg sources of mol/min as Mg doped sources, in above-mentioned MQW
Growing P-type AlGaN/InGaN superlattices electronic barrier layers on active layer；
7th, the p-type GaN layer of growth regulation one：Reaction chamber temperature is risen to 1000-1040 DEG C, under N2 atmosphere, chamber pressure
It is 400-700mbar, it is 5.17 × 10 to be passed through molar concentration7mol/min-3.17×108Mixed as Mg in the Cp2Mg sources of mol/min
Miscellaneous source, grows 40-60nm the first p-type GaN layers of thickness on above-mentioned MQW active layers；
8th, the p-type GaN layer of growth regulation two：Reaction chamber temperature is risen to 1070-1140 DEG C, chamber pressure is 600-
700mbar, under H2 and N2 mixed atmospheres, it is 1.14 × 10 to be passed through molar concentration5mol/min-1.67×105Mol/min's
Cp2Mg sources are used as Mg doped sources；The second thick p-type GaN layers of 40-50nm are grown in the first above-mentioned p-type GaN layer；
9th, the p-type GaN layer of growth regulation three, keeps that reaction chamber temperature is constant, and chamber pressure is 200-400mbar, in H2 and
Under N2 mixed atmospheres, it is 8.8 × 10 to be passed through molar concentration6mol/min-1.05×107Adulterated as Mg in the Cp2Mg sources of mol/min
Source；The 3rd thick p-type GaN layers of 6-8nm are grown in the second above-mentioned p-type GaN layer；
10th, contact layer is grown：Reaction chamber temperature is down to 780-820 DEG C, chamber pressure is 100-300mbar, in N2
Under atmosphere, the thick InGaN contact layers of 3-6nm are grown in the 3rd above-mentioned p-type GaN layer；
11st, anneal：600~750 DEG C are cooled the temperature to, chamber pressure is 300-500mbar, under N2 atmosphere, activation
5~20min of time.Test：The product that embodiment 1, comparative example 1 are obtained is made the chip of 25mil × 25mil, and progressive
Can test.Test structure is see table 1.
Table 1
| LOP(mw) | VF(V) | IR | ESD(2000V) | |
| Comparative example 1 | 119.5 | 3.148 | 0.0131 | 94.6% |
| Embodiment 1 | 121.3 | 3.095 | 0.0142 | 96.4% |
As it can be seen from table 1 the brightness (LOP) of chip that obtains of embodiment 1 and voltage (VF1) are superior to comparative example 1
The chip for arriving.It could therefore be concluded that what the preparation method that the LED epitaxial structure of recombination P-type GaN layer is provided using the present invention was grown
The photoelectric properties of LED chip are more superior, and security performance is higher.
The preferred embodiments of the present invention are the foregoing is only, is not intended to limit the invention, for the skill of this area
For art personnel, the present invention can have various modifications and variations.It is all within the spirit and principles in the present invention, made any repair
Change, equivalent, improvement etc., should be included within the scope of the present invention.
Claims (10)
1. a kind of preparation method of the LED epitaxial structure of recombination P-type GaN layer, it is characterised in that successively including treatment substrate (1),
Grown buffer layer (2), growth u-shaped GaN layer (3), growing n-type GaN layer (4), growth MQW active layers (5), growth electronic barrier layer
(6), growth P-type GaN layer step, wherein, growth P-type GaN layer step specifically includes following steps：
B1, chamber pressure are 400-700mbar, and temperature is 1000-1070 DEG C, N2Under atmosphere, grown on electronic barrier layer low
First p-type GaN layer (7) of Mg doping concentrations,
B2, chamber pressure are constant, and temperature is 1070-1140 DEG C, H2And N2Under mixed atmosphere, in the first p-type obtained by step B1
In GaN layer, the p-type GaN of Mg and Si codopes is grown as the second p-type GaN layer (8),
B3, chamber pressure are 200-400mbar, and temperature and atmosphere are constant, raw in the second p-type GaN layer obtained by step B2
The p-type GaN of Mg doping concentrations of growing tall is used as the 3rd p-type GaN layer (9).
2. preparation method according to claim 1, it is characterised in that growth electronic barrier layer (6) step specifically include with
Lower step：
A1, growth temperature are 860-920 DEG C, and the p-type AlGaN layer of Mg is mixed in growth on MQW active layers, used as barrier layer；
A2, keeping temperature are constant, and In type GaN layers are grown in p-type AlGaN layer as potential well layer；
Step A1 and A2 are repeated cyclically.
3. preparation method according to claim 1, it is characterised in that the p-type AlGaN/InGaN superlattices electronic blockings
Concentration of layer (6) Mg concentration higher than Mg in the first p-type GaN layer (7), the concentration with Mg in the second p-type GaN layer (8)
It is close.
4. preparation method according to claim 1, it is characterised in that the concentration of Mg is small in the first p-type GaN layer (7)
The concentration of Mg in the second p-type GaN layer (8)；The concentration of Mg is less than the 3rd p-type in the second p-type GaN layer (8)
The concentration of Mg in GaN layer (9).
5. preparation method according to claim 1, it is characterised in that in step B2, the doping concentration of acceptor Mg is 2.5 ×
1020~5 × 1020atoms/cm3, the Si doping concentrations of alms giver are 1.5 × 1016~5 × 1016atoms/cm3。
6. preparation method according to claim 2, it is characterised in that
In step B1, it is 5.17 × 10 to be passed through molar concentration7mol/min-5.17×106The Cp of mol/min2Mg mixes in source as Mg
Miscellaneous source；
In step B2, it is 1.14 × 10 to be passed through molar concentration5mol/min-1.97×105The Cp of mol/min2Mg mixes in source as Mg
Miscellaneous source, while it is the SiH of 200ppm for 0.01-0.15ml/min concentration to be passed through flow4As Si doped sources；
In step B3, it is 8.8 × 10 to be passed through molar concentration6mol/min-1.29×105The Cp of mol/min2Adulterated as Mg in Mg sources
Source.
7. preparation method according to claim 2, it is characterised in that the p-type AlGaN/InGaN superlattices electronic blockings
The concentration of Mg is 7 × 10 in layer (6)19~1.5 × 1020atoms/cm3；The p-type AlGaN/InGaN superlattices electronic barrier layers
(6) thickness is 40~80nm.
8. preparation method according to claim 1, it is characterised in that the step A1 and A2 numbers of repetition are 4-8 times.
9. LED epitaxial structure obtained in the preparation method according to claim any one of 1-8, successively including substrate (1), slow
Layer (2), u-shaped GaN layer (3), n-type GaN layer (4), MQW active layers (5), electronic barrier layer (6), p-type GaN layer are rushed, wherein, p-type
GaN layer specifically includes successively：
First p-type GaN layer (7), thickness is 40~80nm, and the concentration of Mg is 8 × 1018~1.5 × 1019atoms/cm3；
Second p-type GaN layer (8), thickness is 30~70nm, and the concentration of Mg is 7 × 1019~1 × 1020atoms/cm3；
3rd p-type GaN layer (9), thickness is 4-10nm, and the concentration of Mg is 2.5 × 1020~5 × 1020atoms/cm3。
10. LED epitaxial structure according to claim 9, it is characterised in that the p-type AlGaN/InGaN superlattices electronics
In barrier layer (6), the thickness of p-type AlGaN potential barrier described in signal period is 2.8-5nm, p-type InGaN gesture described in signal period
Well layer thickness is 2.5-4nm.
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