CN109768133A - Gallium nitride based LED epitaxial slice and its manufacturing method - Google Patents
Gallium nitride based LED epitaxial slice and its manufacturing method Download PDFInfo
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Abstract
The invention discloses a kind of gallium nitride based LED epitaxial slice and its manufacturing methods, belong to technical field of semiconductors.The multiple quantum well layer of epitaxial wafer includes the InGaN quantum well layer and quantum barrier layer of alternating growth, quantum barrier layer includes the first quantum barrier layer and the second quantum barrier layer, second quantum barrier layer is a quantum barrier layer in multiple quantum well layer near electronic barrier layer, first quantum barrier layer is the quantum barrier layer in addition to the second quantum barrier layer, first quantum barrier layer is GaN layer, second quantum barrier layer includes the first GaN sublayer stacked gradually, second sublayer and third sublayer, first sublayer is contacted with quantum well layer, second sublayer and third sublayer include the InGaN layer and AlGaN layer of alternating growth, mixed with Mg in third sublayer, InGaN layer in third sublayer is contacted with electronic barrier layer.The concentration and injection efficiency in hole can be improved in LED epitaxial slice provided by the invention, to improve the luminous efficiency of LED.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of gallium nitride based LED epitaxial slice and its manufacture
Method.
Background technique
LED (Light Emitting Diode, light emitting diode) is a kind of semiconductor electronic component that can be luminous.As
A kind of efficient, environmentally friendly, green New Solid lighting source, is widely applied rapidly, such as traffic lights, automobile
Inside and outside lamp, landscape light in city, cell phone back light source etc..
Epitaxial wafer is the main composition part in LED, and existing GaN base LED epitaxial wafer includes substrate and stacks gradually
Low temperature buffer layer on substrate, three-dimensional nucleating layer, two-dimentional retrieving layer, undoped GaN layer, N-type layer, multiple quantum well layer, electricity
Sub- barrier layer and P-type layer, wherein multiple quantum well layer includes the InGaN well layer and GaN barrier layer of alternating growth, electronic barrier layer P
Type AlGaN layer.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
Since there are poles for lattice mismatch between the last one GaN barrier layer and p-type AlGaN electronic barrier layer of multiple quantum well layer
Change effect, causes the energy band of electronic barrier layer to be bent downwardly, reduce electronic barrier layer for the barrier effect of electronics.And electronics
With lesser effective mass and higher mobility, therefore electronics can easily cross electronic barrier layer and be formed by gesture
It builds, reaches P-type layer and non-radiative recombination occurs for hole, the concentration and injection efficiency in hole reduce, and the luminous efficiency of LED reduces.
Summary of the invention
The embodiment of the invention provides a kind of gallium nitride based LED epitaxial slice and its manufacturing methods, and sky can be improved
The concentration and injection efficiency in cave, to improve the luminous efficiency of LED.The technical solution is as follows:
On the one hand, the present invention provides a kind of gallium nitride based LED epitaxial slice, two poles of gallium nitride base light emitting
Pipe epitaxial wafer include substrate and successively grow low temperature buffer layer over the substrate, three-dimensional nucleating layer, two-dimentional retrieving layer,
Undoped GaN layer, N-type layer, multiple quantum well layer, electronic barrier layer and P-type layer, the multiple quantum well layer include alternating growth
Quantum well layer and quantum barrier layer, the quantum well layer are InGaN layer, and the electronic barrier layer is AlGaN layer,
The quantum barrier layer includes the first quantum barrier layer and the second quantum barrier layer, and second quantum barrier layer is the volume
Near a quantum barrier layer of the electronic barrier layer in sub- well layer, first quantum barrier layer is except second quantum is built
Quantum barrier layer except layer, first quantum barrier layer are GaN layer, and second quantum barrier layer includes the first son stacked gradually
Layer, the second sublayer and third sublayer, first sublayer are GaN layer, and first sublayer is contacted with the quantum well layer, described
Second sublayer and the third sublayer include the InGaN layer and AlGaN layer of alternating growth, mixed with Mg in the third sublayer,
InGaN layer in the third sublayer is contacted with the electronic barrier layer.
Further, first sublayer with a thickness of 0.5~1.5nm.
Further, second sublayer with a thickness of 2~6nm.
Further, the thickness of the InGaN layer in second sublayer and the AlGaN layer in second sublayer is equal.
Further, second sublayer includes m layers of InGaN layer and m layers of AlGaN layer, and m is the positive integer greater than 0.
Further, the third sublayer with a thickness of 3~7nm.
Further, the thickness of the InGaN layer in the third sublayer and the AlGaN layer in the third sublayer is equal.
Further, the third sublayer includes n+1 layers of InGaN layer and n-layer AlGaN layer, and n is the positive integer greater than 0.
Further, the doping concentration of the Mg in the third sublayer is 1*10-6~1*10-7cm-3。
On the other hand, the present invention provides a kind of manufacturing method of gallium nitride based LED epitaxial slice, the manufactures
Method includes:
One substrate is provided；
Successively growing low temperature buffer layer, three-dimensional nucleating layer, two-dimentional retrieving layer, undoped GaN layer, N over the substrate
Type layer, multiple quantum well layer, electronic barrier layer and P-type layer；
Wherein, the electronic barrier layer is AlGaN layer, and the multiple quantum well layer includes the quantum well layer and amount of alternating growth
Sub- barrier layer, the quantum well layer are InGaN layer, and the quantum barrier layer includes the first quantum barrier layer and the second quantum barrier layer, described
Second quantum barrier layer is a quantum barrier layer in the multiple quantum well layer near the electronic barrier layer, first quantum
Barrier layer is the quantum barrier layer in addition to second quantum barrier layer, and first quantum barrier layer is GaN layer, and second quantum is built
Layer includes the first sublayer, the second sublayer and the third sublayer stacked gradually, and first sublayer is GaN layer, first sublayer
It is contacted with the quantum well layer, second sublayer and the third sublayer include the InGaN layer and AlGaN of alternating growth
Layer, mixed with Mg in the third sublayer, the InGaN layer in the third sublayer is contacted with the electronic barrier layer.
Technical solution provided in an embodiment of the present invention has the benefit that
By the way that the second quantum barrier layer in multiple quantum well layer near electronic barrier layer is set as including stacking gradually
First sublayer, the second sublayer and third sublayer.Wherein, the first sublayer is GaN layer, can store electronics, the first sublayer and quantum
Well layer contact, can stop the precipitation of In in quantum well layer.Second sublayer and third sublayer include the InGaN layer of alternating growth
And AlGaN layer, on the one hand, InGaN and AlGaN sublayer is ultrathin material and InGaN/AlGaN structure its valence band hole gesture
It is lower to build height, is conducive to the transmission in hole.On the other hand, mixed with Mg in third sublayer, and InGaN/AlGaN structure is conducive to
The doping of Mg improves hole concentration and injection efficiency so as to generate more holes.The second sublayer can also rise simultaneously
To transitional function, the Mg in third sublayer is prevented to diffuse in quantum well layer, influence the crystal quality of quantum well layer, increases quantum
Non-radiative recombination center in well layer.Further, the InGaN layer in third sublayer is contacted with electronic barrier layer, InGaN layer with
It will form compensation stress between AlGaN electronic barrier layer, so as to alleviate pole between the second quantum barrier layer and electronic barrier layer
Change the generation of effect, and then electronic barrier layer can be improved to the barrier effect of electronics, reduces electronics overflow, finally improve LED
Luminous efficiency.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention；
Fig. 2 is a kind of manufacturing method flow chart of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention；
Fig. 3 is the energy band diagram that a kind of GaN quantum barrier layer provided in an embodiment of the present invention is contacted with electronic barrier layer；
Fig. 4 is a kind of energy band diagram of second quantum barrier layer and electronic barrier layer contact provided in an embodiment of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
Fig. 1 is a kind of structural schematic diagram of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention, such as Fig. 1
Low temperature buffer layer 2, three shown, that gallium nitride based LED epitaxial slice includes substrate 1 and is successively grown on substrate 1
Nucleating layer 3, two-dimentional retrieving layer 4, undoped GaN layer 5, N-type layer 6, multiple quantum well layer 8, electronic barrier layer 9 and P-type layer 10 are tieed up,
Wherein, electronic barrier layer 9 is AlGaN layer.
Multiple quantum well layer 8 includes the quantum well layer 81 and quantum barrier layer of alternating growth, and quantum well layer 81 is InGaN layer.Amount
Sub- barrier layer include the first quantum barrier layer 82 and the second quantum barrier layer 83, the second quantum barrier layer 83 be multiple quantum well layer 8 near
One quantum barrier layer of electronic barrier layer 9, the first quantum barrier layer 82 are the quantum barrier layer in addition to the second quantum barrier layer 83.First
Quantum barrier layer 82 is GaN layer, and the second quantum barrier layer 83 includes the first sublayer 831, the second sublayer 832 and third stacked gradually
Layer 833.First sublayer 831 is GaN layer, and the first sublayer 831 is contacted with quantum well layer 81, the second sublayer 832 and third sublayer 833
Include the InGaN layer and AlGaN layer of alternating growth, mixed with Mg in third sublayer 833, AlGaN layer in third sublayer 833 with
Electronic barrier layer 9 contacts.
The embodiment of the present invention is by the way that the second quantum barrier layer in multiple quantum well layer near electronic barrier layer to be set as wrapping
Include the first sublayer, the second sublayer and third sublayer stacked gradually.Wherein, the first sublayer is GaN layer, can store electronics, the
One sublayer is contacted with quantum well layer, can stop the precipitation of In in quantum well layer.Second sublayer and third sublayer include alternating
The InGaN layer and AlGaN layer of growth, on the one hand, InGaN and AlGaN sublayer is ultrathin material and InGaN/AlGaN structure
Its valence band hole barrier height is lower, is conducive to the transmission in hole.On the other hand, in third sublayer mixed with Mg, and InGaN/
AlGaN structure is conducive to the doping of Mg, so as to generate more holes, improves hole concentration and injection efficiency.Simultaneously
Second sublayer can also play transitional function, prevent the Mg in third sublayer from diffusing in quantum well layer, influence quantum well layer
Crystal quality increases the non-radiative recombination center in quantum well layer.Further, the InGaN layer in third sublayer and electronics hinder
Barrier contact, will form compensation stress, so as to alleviate the second quantum barrier layer between InGaN layer and AlGaN electronic barrier layer
The generation of polarity effect between electronic barrier layer, and then electronic barrier layer can be improved to the barrier effect of electronics, reduce electricity
Sub- overflow, the final luminous efficiency for improving LED.
In the present embodiment, the number of plies of quantum barrier layer than quantum well layer 81 the number of plies more than 1.Then in multiple quantum well layer 8 near
The layer of nearly N-type layer 6 is the first quantum barrier layer 82, and the layer in multiple quantum well layer 8 near P-type layer 9 is the second quantum barrier layer 83.Amount
Sub- barrier layer can not only prevent electronics overflow to P-type layer 9, and hole can also be prevented to be moved to N-type layer 6, reduce electronics and sky
The probability of cave generation non-radiative recombination.
Illustratively, multiple quantum well layer 8 includes n quantum well layer 81 and n+1 quantum barrier layer, 5≤n≤8.If Multiple-quantum
The periodicity of well layer 8 is too small, then since the quantity of composite construction is very little electrons and holes may not be carried out adequately
Recombination luminescence leads to the luminous efficiency for reducing LED.If the periodicity of multiple quantum well layer 8 is excessive, it may be such that electrons and holes
Distribution do not concentrate, the combined efficiency of electrons and holes is lower, causes the luminous efficiency of LED lower.
Optionally, the thickness of the first sublayer 831 can be 0.5~1.5nm.If the thickness of the first sublayer 831 is less than
0.5nm does not have stored electrons then, stops the effect of the precipitation of In in quantum well layer.If the thickness of the first sublayer 831 is greater than
1.5nm, then be easy to influence carrier and normally migrate, and plays barrier effect to the compound of electrons and holes, reduces LED's
Luminous efficiency.
Illustratively, the first sublayer 831 with a thickness of 1nm, the first sublayer 831 can both stop In in quantum well layer at this time
It is precipitated, and will not influence the radiation recombination of electrons and holes.
Optionally, the thickness of the second sublayer 832 can be 2~6nm.If the thickness of the second sublayer 832 is less than 2nm, nothing
Method effectively stops Mg to diffuse in quantum well layer 81, to not can guarantee the crystal quality of quantum well layer 81.If the second sublayer 832
Thickness be greater than 6nm, then be easy to influence carrier and normally migrate, barrier effect is played to the compound of electrons and holes,
Reduce the luminous efficiency of LED.
Illustratively, the second sublayer 832 with a thickness of 4nm.
Further, the thickness of the InGaN layer in the second sublayer 832 and the AlGaN layer in the second sublayer 832 is equal, with
Convenient for practical growth control.
In the present embodiment, the thickness of the InGaN layer in the second sublayer 832 and the AlGaN layer in the second sublayer 832 can be with
It is 1nm.
Optionally, as shown in Figure 1, it is big that the second sublayer 832, which may include m layers of InGaN layer 1a and m layers of AlGaN layer 2a, m,
In 0 positive integer.Since the lattice constant of GaN/InN/AlN is respectively 3.18A/3.54A/3.11A, the lattice constant of InGaN
It is bigger than GaN, so InGaN layer has biggish compression, and in InGaN/AlGaN structure, AlGaN layer has lesser crystalline substance
Lattice constant and compression brought by InGaN layer can be compensated by possessing elastic stress, therefore, by the InGaN in the second sublayer 832
Layer is arranged identical with the number of plies of AlGaN layer, it is possible to reduce the compression in the second sublayer 832, to improve the second sublayer 832
Crystal quality.
Illustratively, m=2, i.e. the second sublayer 832 are InGaN/AlGaN/InGaN/AlGaN structure.
Optionally, the thickness of third sublayer 833 can be 3~7nm.If the thickness of third sublayer 833 is less than 3nm, rise
Less than the effect for improving hole concentration and injection efficiency.If the thickness of third sublayer 833 is greater than 7nm, it is easy to influence load
The normal migration of stream, plays barrier effect to the compound of electrons and holes, reduces the luminous efficiency of LED.
Illustratively, third sublayer 833 with a thickness of 5nm.
Further, the thickness of the InGaN layer in third sublayer 833 and the AlGaN layer in third sublayer 833 is equal, with
Convenient for practical growth control.
In the present embodiment, the thickness of the InGaN layer in third sublayer 833 and the AlGaN layer in third sublayer 833 can be with
It is 1nm.
Optionally, third sublayer 833 includes n+1 layers of InGaN layer 2a and n-layer AlGaN layer 2b, n are the positive integer greater than 0.
Third sublayer 833 is arranged to the structure of this symmetric growth, it is possible to reduce the stress integrally accumulated in epitaxial layer, while also can
Reduce the piezoelectric polarization phenomenon as caused by stress in epitaxial layer.
Illustratively, n=2, i.e. third sublayer 833 are InGaN/AlGaN/InGaN/AlGaN/InGaN structure.
Further, the doping concentration of Mg can be 1*10 in third sublayer 833-6~1*10-7cm-3.If third sublayer
The doping concentration of Mg is less than 1*10 in 833-6cm-3, then the number of cavities that provides reduces, and does not have the injection efficiency for improving hole
Effect.Mg is impurity simultaneously, if the doping concentration of Mg is greater than 1*10 in third sublayer 833-7cm-3cm-3, then will affect third
The crystal quality of sublayer 833.
Illustratively, the doping concentration of Mg is 5*10 in third sublayer 833-7cm-3。
Optionally, the thickness of quantum well layer 81 can be 3~5nm.It, may be due to if the thickness of quantum well layer 81 is excessively thin
The thickness of quantum well layer 81 is too small and influences the recombination luminescence of electrons and holes in quantum well layer 81, reduces the luminous effect of LED
Rate.If the thickness of quantum well layer 81 is blocked up, may be caused in quantum well layer 81 since the thickness of quantum well layer 81 is too big
More stress are generated, influence the crystal quality of quantum well layer 81 to influence the luminous efficiency of LED.
Optionally, the thickness of the first quantum barrier layer 82 can be 3~10nm.If the thickness of the first quantum barrier layer 82 is excessively thin,
Then may due to the thickness of the first quantum barrier layer 82 is too small and cause the crystal quality improvement of the entirety of multiple quantum well layer 8 compared with
Difference.If the thickness of the first quantum barrier layer 82 is blocked up, it is easy to influence carrier and normally migrate, to the compound of electrons and holes
Barrier effect is played, the luminous efficiency of LED is reduced.
Optionally, substrate 1 can be Sapphire Substrate.
Optionally, low temperature buffer layer 2 can be AlN buffer layer or GaN buffer layer.
Optionally, three-dimensional nucleating layer 3 can be GaN layer, with a thickness of 400~600nm.
Optionally, two-dimentional retrieving layer 4 can be GaN layer, with a thickness of 500~800nm.
Optionally, undoped GaN layer 5 with a thickness of 1~2um.
Optionally, N-type layer 6 can be to mix the GaN layer of Si, with a thickness of 1~2um.
Optionally, LED epitaxial slice can also include the stress being arranged between N-type layer 6 and multiple quantum well layer 8
Releasing layer 7, stress release layer 7 may include the first N-type GaN sublayer successively grown, InGaN/GaN weeks of 2~10 periods
Phase property structure and the second N-type GaN sublayer.
Wherein, the thickness of the first N-type GaN sublayer can be 50nm, the InGaN layer in InGaN/GaN periodic structure
Thickness can be 2nm, and the thickness of the GaN layer in InGaN/GaN periodic structure can be 20nm, the thickness of the second N-type GaN sublayer
Degree can be 40nm.
Optionally, the thickness of electronic barrier layer 9 can be 20~100nm.
Optionally, P-type layer 10 can be GaN layer, with a thickness of 100~300nm.
Optionally, LED epitaxial slice can also include the p-type contact layer 11 being arranged in P-type layer 10.P-type contact
Layer 11 can be the GaN layer of heavily doped Mg, with a thickness of 50~100nm.
Fig. 2 is a kind of manufacturing method flow chart of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention,
As shown in Fig. 2, the manufacturing method includes:
Step 201 provides a substrate.
Wherein, the Al of [0001] crystal orientation can be used in substrate2O3Sapphire Substrate.
Further, step 201 can also include:
Substrate is annealed 1~10min in hydrogen atmosphere, to clean substrate surface, nitrogen treatment then is carried out to substrate,
Temperature when nitrogen treatment is controlled at 1000~1200 DEG C.
Wherein, the mode that substrate is made annealing treatment depends on the growth pattern of low temperature buffer layer.
When using PVD (Physical Vapor Deposition, physical vapour deposition (PVD)) method deposit low temperature buffer layer
When, carrying out annealing to substrate includes: that substrate is placed into the reaction chamber of PVD equipment, and vacuumizes to reaction chamber,
Start to carry out heat temperature raising to substrate while vacuumizing.When the pressure in reaction chamber is evacuated to lower than 1*10-7When torr, it will heat
Temperature is stablized at 350~750 DEG C, toasts to substrate, and baking time is 2~12min.
When using MOCVD (Metal-organic Chemical Vapor Deposition, metallo-organic compound
Learn gaseous phase deposition) method deposit low temperature buffer layer when, to substrate carry out annealing include: that substrate is placed into MOCVD device
Reaction chamber in, then made annealing treatment 10 minutes in hydrogen atmosphere, clean substrate surface, annealing temperature is at 1000 DEG C and 1100
Between DEG C, pressure is between 200torr~500torr.
Step 202, on substrate growing low temperature buffer layer.
Wherein, low temperature buffer layer can be GaN buffer layer, be also possible to AlN buffer layer.
When low temperature buffer layer is GaN buffer layer, mocvd method growing low temperature buffer layer can be used, comprising: firstly, will
The reaction cavity temperature of MOCVD device is adjusted to 400 DEG C~600 DEG C, and pressure is adjusted to 200~600torr, grows 15~35nm
Thick GaN buffer layer.
When low temperature buffer layer is AlN buffer layer, PVD method growing low temperature buffer layer can be used, comprising: by PVD equipment
Reaction cavity temperature adjust to 400~700 DEG C, sputtering power is adjusted to 3000~5000W, pressure adjustment most 1~
10mtorr grows the AlN buffer layer of 15~35nm thickness.
It should be noted that the undoped GaN layer in epitaxial layer, N-type layer, stress release layer, multiple quantum well layer, electronics
Barrier layer, P-type layer and p-type contact layer can be grown using mocvd method.It in specific implementation, is usually to place the substrate in
It is sent on graphite pallet in the reaction chamber of MOCVD device and carries out the growth of epitaxial material, therefore controlled in above-mentioned growth course
Temperature and pressure actually refers to the temperature and pressure in reaction chamber.Specifically, using trimethyl gallium or trimethyl second as gallium
Source, boron triethyl are mixed as indium source, trimethyl aluminium as silicon source, N-type as boron source, high pure nitrogen as nitrogen source, trimethyl indium
Miscellaneous dose of selection silane, P-type dopant select two luxuriant magnesium.
Step 203, the growing three-dimensional nucleating layer on low temperature buffer layer.
In the present embodiment, three-dimensional nucleating layer can be GaN layer.
Illustratively, reaction chamber temperature being adjusted to 1000~1050 DEG C, chamber pressure is controlled in 300~600torr,
Growth thickness is the three-dimensional nucleating layer of 400~600nm, and growth time is 10~20min.
Step 204 grows two-dimentional buffer layer on three-dimensional nucleating layer.
In the present embodiment, two-dimentional buffer layer can be GaN layer.
Illustratively, reaction chamber temperature being adjusted to 1050~1150 DEG C, chamber pressure is controlled in 100~300torr,
Growth thickness is the two-dimentional buffer layer of 500~800nm, and growth time is 20~40min.
Step 205 grows undoped GaN layer on two-dimentional buffer layer.
Illustratively, reaction chamber temperature being adjusted to 1050~1200 DEG C, chamber pressure is controlled in 100~300torr,
Growth thickness is the undoped GaN layer of 1~2um.
Step 206 grows N-type layer in undoped GaN layer.
In the present embodiment, N-type layer can be to mix the GaN layer of Si, and Si doping concentration can be 1018cm-3~1020cm-3。
Illustratively, reaction chamber temperature being adjusted to 1050~1200 DEG C, chamber pressure is controlled in 100~300torr,
Growth thickness is the N-type layer of 1~2um.
Step 207, the growth stress releasing layer in N-type layer.
In the present embodiment, stress release layer may include the first N-type GaN sublayer successively grown, 2~10 periods
InGaN/GaN periodic structure and the second N-type GaN sublayer.Wherein, the first N-type GaN sublayer can be with stored electrons.2~10
The InGaN/GaN periodic structure in a period can discharge the stress generated in epitaxial process and defect, improve Multiple-quantum
The growth quality of well layer, and then improve the luminous efficiency of LED.Mixed with Si in second N-type GaN sublayer, electronics not only can store,
The precipitation that can also stop In further increases the growth quality of multiple quantum well layer.
Illustratively, reaction chamber temperature is adjusted to 800~900 DEG C, chamber pressure control is in 100~500torr, life
Long stress release layer.
Wherein, the first N-type GaN sublayer with a thickness of 50nm, the thickness of the InGaN layer in InGaN/GaN periodic structure
For 2nm, GaN layer in InGaN/GaN periodic structure with a thickness of 20nm, the second N-type GaN sublayer with a thickness of 40nm.
Step 208 grows multiple quantum well layer on stress release layer.
Wherein, multiple quantum well layer includes the quantum well layer and quantum barrier layer of alternating growth, and quantum well layer is InGaN layer.Amount
Sub- barrier layer includes the first quantum barrier layer and the second quantum barrier layer, and the second quantum barrier layer is in multiple quantum well layer near electronic blocking
One quantum barrier layer of layer, the first quantum barrier layer are the quantum barrier layer in addition to the second quantum barrier layer.First quantum barrier layer is GaN
Layer, the second quantum barrier layer includes the first sublayer, the second sublayer and third sublayer stacked gradually.First sublayer be GaN layer, first
Sublayer is contacted with quantum well layer, and the second sublayer and third sublayer include the InGaN layer and AlGaN layer of alternating growth, third
Mixed with Mg in layer, the InGaN layer in third sublayer is contacted with electronic barrier layer.
In the present embodiment, the number of plies of quantum barrier layer than quantum well layer the number of plies more than 1.Then near N in multiple quantum well layer
The layer of type layer is the first quantum barrier layer, near the layer of P-type layer is the second quantum barrier layer in multiple quantum well layer.
Illustratively, multiple quantum well layer includes n quantum well layer and n+1 quantum barrier layer, 5≤n≤8.
Optionally, the thickness of the first sublayer can be 0.5~1.5nm.
Illustratively, the first sublayer with a thickness of 1nm.
Optionally, the thickness of the second sublayer can be 2~6nm.
Illustratively, the second sublayer with a thickness of 4nm.
Further, the thickness of the InGaN layer in the second sublayer and the AlGaN layer in the second sublayer is equal, in order to reality
Border growth control.
In the present embodiment, the thickness of the InGaN layer in the second sublayer and the AlGaN layer in the second sublayer can be
1nm。
Optionally, the second sublayer may include m layers of InGaN layer and m layers of AlGaN layer, and m is the positive integer greater than 0.
Illustratively, m=2, i.e. the second sublayer are InGaN/AlGaN/InGaN/AlGaN structure.
Optionally, the thickness of third sublayer can be 3~7nm.
Illustratively, third sublayer with a thickness of 5nm.
Further, the thickness of the InGaN layer in third sublayer and the AlGaN layer in third sublayer is equal, in order to reality
Border growth control.
In the present embodiment, the thickness of the InGaN layer in third sublayer and the AlGaN layer in third sublayer can be
1nm。
Optionally, third sublayer includes n+1 layers of InGaN layer and n-layer AlGaN layer, and n is the positive integer greater than 0.
Illustratively, n=2, i.e. third sublayer are InGaN/AlGaN/InGaN/AlGaN/InGaN structure.
Further, the doping concentration of Mg can be 1*10 in third sublayer-6~1*10-7cm-3。
Illustratively, the doping concentration of Mg is 5*10 in third sublayer-7cm-3。
Optionally, the thickness of quantum well layer 81 can be 3~5nm, and the thickness of the first quantum barrier layer can be 3~10nm.
Illustratively, step 208 may include:
Controlling reaction chamber temperature is 700~800 DEG C, and chamber pressure is 300~500torr, grown quantum well layer；
Controlling reaction chamber temperature is 850~900 DEG C, and chamber pressure is 300~500torr, grown quantum barrier layer.
Wherein, the growth conditions of the first quantum barrier layer and the second quantum barrier layer is equal, i.e. the first quantum barrier layer and the second amount
The growth temperature of sub- barrier layer is 850~900 DEG C, and growth pressure is 300~500torr.
Step 209 grows electronic barrier layer on multiple quantum well layer.
In the present embodiment, electronic barrier layer 92 can be p-type AlGaN layer
Illustratively, reaction chamber temperature is adjusted to 800~1000 DEG C, chamber pressure control is in 50~500torr, life
The long electronic barrier layer with a thickness of 20~100nm.
Step 210, the growing P-type layer on electronic barrier layer.
In the present embodiment, P-type layer is to mix the GaN layer of Mg, and the doping concentration of Mg can be 1 × 1019~1 × 1020cm-3。
Illustratively, reaction chamber temperature is adjusted to 850~950 DEG C, chamber pressure control is in 100~300torr, life
The long P-type layer with a thickness of 100~300nm.
Step 211, the growing P-type contact layer in P-type layer.
In the present embodiment, p-type contact layer can be the GaN layer of heavily doped Mg.
Illustratively, reaction chamber temperature being adjusted to 850~1000 DEG C, chamber pressure is controlled in 100~300torr,
Growth thickness is the p-type contact layer of 50~100nm.
After above-mentioned steps completion, the temperature of reaction chamber is down to 650~850 DEG C, is carried out at annealing in nitrogen atmosphere
5~15min is managed, room temperature is then gradually decreased to, terminates the epitaxial growth of light emitting diode.
The embodiment of the present invention is by the way that the second quantum barrier layer in multiple quantum well layer near electronic barrier layer to be set as wrapping
Include the first sublayer, the second sublayer and third sublayer stacked gradually.Wherein, the first sublayer is GaN layer, can store electronics, the
One sublayer is contacted with quantum well layer, can stop the precipitation of In in quantum well layer.Second sublayer and third sublayer include alternating
The InGaN layer and AlGaN layer of growth, on the one hand, InGaN and AlGaN sublayer is ultrathin material and InGaN/AlGaN structure
Its valence band hole barrier height is lower, is conducive to the transmission in hole.On the other hand, in third sublayer mixed with Mg, and InGaN/
AlGaN structure is conducive to the doping of Mg, so as to generate more holes, improves hole concentration and injection efficiency.Simultaneously
Second sublayer can also play transitional function, prevent the Mg in third sublayer from diffusing in quantum well layer, influence quantum well layer
Crystal quality increases the non-radiative recombination center in quantum well layer.Further, the InGaN layer in third sublayer and electronics hinder
Barrier contact, will form compensation stress, so as to alleviate the second quantum barrier layer between InGaN layer and AlGaN electronic barrier layer
The generation of polarity effect between electronic barrier layer, and then electronic barrier layer can be improved to the barrier effect of electronics, reduce electricity
Sub- overflow, the final luminous efficiency for improving LED.
Fig. 3 is the energy band diagram that a kind of GaN quantum barrier layer provided in an embodiment of the present invention is contacted with electronic barrier layer, and Fig. 4 is
The energy band diagram of a kind of second quantum barrier layer and electronic barrier layer provided in an embodiment of the present invention contact, the abscissa in Fig. 3 and Fig. 4
Indicate distance of the last one quantum well layer from multiple quantum well layer to electronic barrier layer, ordinate expression energy band band gap.It is empty
Line indicates that the fermi level of electrons and holes, solid line indicate the energy band of conduction band electron and valence band hole, can be bright from Fig. 3 and Fig. 4
Aobvious to find out, the presence in Fig. 3 between the last one GaN quantum barrier layer and electronic barrier layer because of polarization field will generate serious
Energy band is bent downwardly, and being bent downwardly for energy band will reduce the electronic barrier height of conduction band in electronic barrier layer, so that a large amount of electricity
Overflow to P-type layer is consumed a large amount of hole by son, eventually leads to serious electronics overflow electric current and lower hole injection efficiency.
Energy band is bent downwardly effect and obtains very big alleviation between the second quantum barrier layer and electronic barrier layer in Fig. 4.
The foregoing is merely a prefered embodiment of the invention, is not intended to limit the invention, all in the spirit and principles in the present invention
Within, any modification, equivalent replacement, improvement and so on should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of gallium nitride based LED epitaxial slice, the gallium nitride based LED epitaxial slice include substrate and
Successively grow low temperature buffer layer over the substrate, three-dimensional nucleating layer, two-dimentional retrieving layer, undoped GaN layer, N-type layer, more
Quantum well layer, electronic barrier layer and P-type layer, the multiple quantum well layer include the quantum well layer and quantum barrier layer of alternating growth, institute
Stating quantum well layer is InGaN layer, and the electronic barrier layer is AlGaN layer, which is characterized in that
The quantum barrier layer includes the first quantum barrier layer and the second quantum barrier layer, and second quantum barrier layer is the multiple quantum wells
Layer near the electronic barrier layer a quantum barrier layer, first quantum barrier layer be except second quantum barrier layer it
Outer quantum barrier layer, first quantum barrier layer be GaN layer, second quantum barrier layer include the first sublayer stacked gradually,
Second sublayer and third sublayer, first sublayer are GaN layer, and first sublayer contacts with the quantum well layer, described the
Two sublayers and the third sublayer include the InGaN layer and AlGaN layer of alternating growth, mixed with Mg, institute in the third sublayer
The InGaN layer stated in third sublayer is contacted with the electronic barrier layer.
2. gallium nitride based LED epitaxial slice according to claim 1, which is characterized in that the thickness of first sublayer
Degree is 0.5~1.5nm.
3. gallium nitride based LED epitaxial slice according to claim 1, which is characterized in that the thickness of second sublayer
Degree is 2~6nm.
4. gallium nitride based LED epitaxial slice according to claim 1, which is characterized in that in second sublayer
The thickness of InGaN layer and the AlGaN layer in second sublayer is equal.
5. gallium nitride based LED epitaxial slice according to claim 1, which is characterized in that second sublayer includes
M layers of InGaN layer and m layers of AlGaN layer, m are the positive integer greater than 0.
6. gallium nitride based LED epitaxial slice according to claim 1, which is characterized in that the thickness of the third sublayer
Degree is 3~7nm.
7. gallium nitride based LED epitaxial slice according to claim 1, which is characterized in that in the third sublayer
The thickness of InGaN layer and the AlGaN layer in the third sublayer is equal.
8. gallium nitride based LED epitaxial slice according to claim 1, which is characterized in that the third sublayer includes
N+1 layers of InGaN layer and n-layer AlGaN layer, n are the positive integer greater than 0.
9. gallium nitride based LED epitaxial slice according to claim 1, which is characterized in that in the third sublayer
The doping concentration of Mg is 1*10-6~1*10-7cm-3。
10. a kind of manufacturing method of gallium nitride based LED epitaxial slice, which is characterized in that the manufacturing method includes:
One substrate is provided；
Over the substrate successively growing low temperature buffer layer, three-dimensional nucleating layer, two-dimentional retrieving layer, undoped GaN layer, N-type layer,
Multiple quantum well layer, electronic barrier layer and P-type layer；
Wherein, the electronic barrier layer is AlGaN layer, and the multiple quantum well layer includes that the quantum well layer of alternating growth and quantum are built
Layer, the quantum well layer be InGaN layer, the quantum barrier layer include the first quantum barrier layer and the second quantum barrier layer, described second
Quantum barrier layer is a quantum barrier layer in the multiple quantum well layer near the electronic barrier layer, first quantum barrier layer
For the quantum barrier layer in addition to second quantum barrier layer, first quantum barrier layer is GaN layer, the second quantum barrier layer packet
The first sublayer, the second sublayer and third sublayer stacked gradually is included, first sublayer is GaN layer, first sublayer and institute
Quantum well layer contact is stated, second sublayer and the third sublayer include the InGaN layer and AlGaN layer of alternating growth, institute
The InGaN layer mixed with Mg, in the third sublayer is stated in third sublayer to contact with the electronic barrier layer.
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