CN106409999A - LED epitaxy superlattice growth method - Google Patents
LED epitaxy superlattice growth method Download PDFInfo
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- CN106409999A CN106409999A CN201611004577.5A CN201611004577A CN106409999A CN 106409999 A CN106409999 A CN 106409999A CN 201611004577 A CN201611004577 A CN 201611004577A CN 106409999 A CN106409999 A CN 106409999A
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- 230000012010 growth Effects 0.000 title claims abstract description 95
- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000000407 epitaxy Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 12
- 238000001816 cooling Methods 0.000 claims abstract description 10
- 229910052594 sapphire Inorganic materials 0.000 claims description 11
- 239000010980 sapphire Substances 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 4
- 230000001788 irregular Effects 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 description 62
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 26
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 10
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 10
- 239000007789 gas Substances 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 230000005533 two-dimensional electron gas Effects 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000035755 proliferation Effects 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000013256 coordination polymer Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000001795 light effect Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910007261 Si2N3 Inorganic materials 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 230000007773 growth pattern Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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Abstract
The present invention discloses a LED epitaxy superlattice growth method. The method comprises in order: processing a substrate, growing a low-temperature buffer layer GaN, growing an un-doping GaN layer, growing an N-type GaN layer doping Si, growing an InAlN/Mg2N3 superlattice layer, growing a luminescent layer, growing a P-type AlGaN layer, growing a P-type GaN layer doping Mg, and performing cooling. The InAlN/Mg2N3 superlattice layer is introduced after the growth of the N-type GaN layer doping Si and prior to the growth of the luminescent layer so as to extend the LED current, improve the LED luminous efficiency and allow the electrical parameters of the LED to be better.
Description
Technical field
The application is related to LED epitaxial scheme applied technical field, specifically, is related to a kind of LED extensional superlattice growth
Method.
Background technology
LED (Light Emitting Diode, light emitting diode) is a kind of solid state lighting equipment at present, small volume, consumption
Electricity is low, long service life, high brightness, environmental protection, sturdy and durable the advantages of approved by consumers in general, domestic production LED's
Scale is also progressively expanding.On market, the demand of LED luminance and light efficiency is grown with each passing day, how to grow more preferable epitaxial wafer increasingly
It is taken seriously, because the raising of epitaxial layer crystal mass, the performance of LED component can get a promotion, the luminous efficiency of LED, longevity
Life, ageing resistance, antistatic effect, stability can be lifted with the lifting of epitaxial layer crystal mass.
But, traditional sapphire LED epitaxially grown N layer CURRENT DISTRIBUTION is uneven, leads to current crowding N layer resistance to become
Height, leads to the uneven luminous efficiency of luminescent layer CURRENT DISTRIBUTION not high.
Content of the invention
In view of this, technical problems to be solved in this application there is provided a kind of LED extensional superlattice growing method, draws
Enter InAlN/Mg2N3Superlattice layer, can extend LED current, reduce LED driving voltage, lifting LED light effect performance, increase LED
Brightness.
In order to solve above-mentioned technical problem, the application has following technical scheme：
A kind of LED extensional superlattice growing method is it is characterised in that include successively：Process substrate, low temperature growth buffer layer
GaN, growth undope GaN layer, growth doping Si N-type GaN layer, growth luminescent layer, growing P-type AlGaN layer, growth doping Mg
P-type GaN layer, cooling down,
After the N-type GaN layer of described growth doping Si, before described growth luminescent layer, also include：Growth InAlN/
Mg2N3Superlattice layer,
Described growth InAlN/Mg2N3Superlattice layer, specially：
Keep reaction cavity pressure 400mbar-500mbar, 900 DEG C -1000 DEG C of keeping temperature, being passed through flow is
The NH of 30000sccm-60000sccm3, 200sccm-300sccm TMAl, 100L/min-130L/min N2、1000sccm-
The TMIn of 2000sccm, growth thickness is the InAIN layer of 10nm-20nm；
Keep reaction cavity pressure 400mbar-500mbar, 900 DEG C -1000 DEG C of keeping temperature, being passed through flow is 50000-
The NH of 70000sccm3, the H of 100-130L/min2, the Cp of 1200-2500sccm2Mg grows the Mg of 5-15nm2N3Layer；
InAIN layer described in cyclical growth and described Mg2N3Layer, growth cycle is 10-20,
Grow described InAIN layer layer and grow described Mg2N3The order of layer is interchangeable.
Preferably, wherein：
Described process substrate, further for：In 1000 DEG C -1100 DEG C of H2Under atmosphere, it is passed through 100L/min-130L/min
H2, keep reaction cavity pressure 100mbar-300mbar, process Sapphire Substrate 5min-10min.
Preferably, wherein：
Described low temperature growth buffer layer, further for：
Reduce temperature to 500 DEG C -600 DEG C, keep reaction cavity pressure 300mbar-600mbar, being passed through flow is
10000sccm-20000sccm NH3, 50sccm-100sccm TMGa, 100L/min-130L/min H2, in sapphire lining
On bottom, growth thickness is the low temperature buffer layer GaN of 20nm-40nm；
Rise high-temperature to 1000 DEG C -1100 DEG C, keep reaction cavity pressure 300mbar-600mbar, being passed through flow is
30000sccm-40000sccm NH3, the H of 100L/min-130L/min2, keeping temperature is stable, continues 300s-500s, will be low
Warm cushion GaN corrodes into irregular island.
Preferably, wherein：
Described growth undopes GaN layer, further for：
Increase the temperature to 1000 DEG C -1200 DEG C, keep reaction cavity pressure 300mbar-600mbar, being passed through flow is
The NH of 30000sccm-40000sccm3, 200sccm-400sccm TMGa, 100L/min-130L/min H2, continued propagation 2
μm -4 μm of the GaN layer that undopes.
Preferably, wherein：
Described growth doping Si N-type GaN layer, further for：
Keep reaction cavity pressure, temperature-resistant, be passed through the NH that flow is 30000sccm-60000sccm3、200sccm-
The H of TMGa, 100L/min-130L/min of 400sccm2, the SiH of 20sccm-50sccm4, 3 μm -4 μm doping Si of continued propagation
N-type GaN, Si doping content 5E18atoms/cm3-1E19atoms/cm3.
Preferably, wherein：
Described growth luminescent layer, further for：
Keep reaction cavity pressure 300mbar-400mbar, 700 DEG C -750 DEG C of temperature, being passed through flow is 50000sccm-
The NH of 70000sccm3, 20sccm-40sccm TMGa, 1500sccm-2000sccm TMIn, 100L/min-130L/min
N2, the thickness of growth doping In is the In of 2.5nm-3.5nmxGa(1-x)N layer, x=0.20-0.25, emission wavelength 450nm-
455nm；
Then rise high-temperature to 750 DEG C -850 DEG C, keep reaction cavity pressure 300mbar-400mbar, being passed through flow is
The NH of 50000sccm-70000sccm3, 20sccm-100sccm TMGa, 100L/min-130L/min N2, grow 8nm-
The GaN layer of 15nm；
Repeat InxGa(1-x)The growth of N, then repeats the growth of GaN, alternating growth InxGa(1-x)N/GaN luminescent layer, control
Periodicity processed is 7-15.
Preferably, wherein：
Described growing P-type AlGaN layer, further for：
Keep reaction cavity pressure 200mbar-400mbar, 900 DEG C -950 DEG C of temperature, being passed through flow is 50000sccm-
The NH of 70000sccm3, 30sccm-60sccm TMGa, 100L/min-130L/min H2, 100sccm-130sccm
The Cp of TMAl, 1000sccm-1300sccm2The p-type AlGaN layer of Mg, continued propagation 50nm-100nm, Al doping content
1E20atoms/cm3-3E20atoms/cm3, Mg doping content 1E19atoms/cm3-1E20atoms/cm3.
Preferably, wherein：
Described growth doping Mg p-type GaN layer, further for：
Keep reaction cavity pressure 400mbar-900mbar, 950 DEG C -1000 DEG C of temperature, being passed through flow is 50000sccm-
The NH of 70000sccm3, 20sccm-100sccm TMGa, 100L/min-130L/min H2, 1000sccm-3000sccm
Cp2The p-type GaN layer mixing Mg of Mg, continued propagation 50nm-200nm, Mg doping content 1E19atoms/cm3-1E20atoms/
cm3.
Preferably, wherein：
Described cooling down, further for：
It is cooled to 650 DEG C -680 DEG C, be incubated 20min-30min, be then switched off heating system, close to gas system, with stove
Cooling.
Compared with prior art, method described herein, has reached following effect：
LED extensional superlattice growing method of the present invention, compared with conventional method, in the N-type GaN layer of described growth doping Si
Afterwards, before growth luminescent layer, introduce growth InAlN/Mg2N3Superlattice layer.New material InAlN/Mg2N3Superlattice layer profit
Use Mg2N3High energy band as gesture build stop electronics too fast by N Es-region propagations to luminescent layer, longitudinal propagation more crowded electronics chance
To Mg2N3Can carry stops that suitable horizontal proliferation is come；InAlN/Mg simultaneously2N3Superlattice layer forms the two dimension electricity of high concentration
Sub- gas, the lateral transfer rate of two-dimensional electron gas is very high, accelerates the extending transversely of electronics, and macroscopically electric current passes through InAlN/Mg2N3
Come by effective extension during superlattice layer, so that the distribution of luminescent layer electric current becomes uniform, and then improve sending out of LED
Light efficiency, makes every electrical parameter of LED improve simultaneously.
Brief description
Accompanying drawing described herein is used for providing further understanding of the present application, constitutes the part of the application, this Shen
Schematic description and description please is used for explaining the application, does not constitute the improper restriction to the application.In the accompanying drawings：
Fig. 1 is the structural representation of LED epitaxial layer in the present invention；
Fig. 2 is the structural representation of LED epitaxial layer in comparative example；
Wherein, 1, substrate, 2, low temperature buffer layer GaN, 3, U-shaped GaN layer, 4, the GaN layer of doping Si, 5, superlattice layer,
5.1st, InAIN layer, 5.2, Mg2N3Layer, 6, luminescent layer, 6.1, InxGa(1-x)N layer, 6.2, GaN layer, 7, p-type AlGaN layer, 8, doping
The p-type GaN layer of Mg.
Specific embodiment
To censure specific components as employed some vocabulary in the middle of specification and claim.Those skilled in the art should
It is understood that same assembly may be called with different nouns by manufacturer.This specification and claims are not with title
Difference is used as distinguishing the mode of assembly, but difference functionally is used as the criterion distinguished with assembly.As said in the whole text
In the middle of bright book and claim, mentioned "comprising" is an open language, therefore should be construed to " comprise but be not limited to "." big
Cause " refer in receivable error range, those skilled in the art can solve described technology in the range of certain error and ask
Topic, basically reaches described technique effect.Specification subsequent descriptions are to implement the better embodiment of the application, and so described description is
For the purpose of the rule that the application is described, it is not limited to scope of the present application.The protection domain of the application is when regarding institute
Attached as defined in claim is defined.
Embodiment 1
Referring to Fig. 1, the present invention uses MOCVD next life long high brightness GaN-based LED.Using high-purity H2Or high-purity N2Or
High-purity H2And high-purity N2Mixed gas as carrier gas, high-purity N H3As N source, metal organic source trimethyl gallium (TMGa) is as gallium
Source, as indium source, N type dopant is silane (SiH to trimethyl indium (TMIn)4), trimethyl aluminium (TMAl) as silicon source, mix by p-type
Miscellaneous dose is two luxuriant magnesium (CP2Mg), substrate is (001) surface sapphire, and reaction pressure is between 70mbar to 900mbar.Specifically give birth to
Long mode is as follows：
A kind of LED extensional superlattice growing method is it is characterised in that include successively：Process substrate, low temperature growth buffer layer
GaN, growth undope GaN layer, growth doping Si N-type GaN layer, growth luminescent layer, growing P-type AlGaN layer, growth doping Mg
P-type GaN layer, cooling down,
After the N-type GaN layer of described growth doping Si, before growth luminescent layer, also include：Growth InAlN/Mg2N3Super
Lattice layer,
Described growth InAlN/Mg2N3Superlattice layer, specially：
Keep reaction cavity pressure 400mbar-500mbar, 900 DEG C -1000 DEG C of keeping temperature, being passed through flow is
The NH of 30000sccm-60000sccm3, 200sccm-300sccm TMAl, 100L/min-130L/min N2、1000sccm-
The TMIn of 2000sccm, growth thickness is the InAIN layer of 10nm-20nm；
Keep reaction cavity pressure 400mbar-500mbar, 900 DEG C -1000 DEG C of keeping temperature, being passed through flow is 50000-
The NH of 70000sccm3, the H of 100-130L/min2, the Cp of 1200-2500sccm2Mg grows the Mg of 5-15nm2N3Layer；
InAIN layer described in cyclical growth and described Mg2N3Layer, growth cycle is 10-20,
Grow described InAIN layer layer and grow described Mg2N3The order of layer is interchangeable.
The present invention growth doping Si N-type GaN layer after, growth luminescent layer before, introduce growth InAlN/Mg2N3
The step of superlattice layer, grows InAlN/Mg2N3Superlattice layer.InAlN/Mg2N3Superlattice layer utilizes Mg2N3High energy band conduct
Gesture build stop electronics too fast by N Es-region propagations to luminescent layer, the more crowded electronics of longitudinal propagation runs into Mg2N3The stop that can carry is fitted
When horizontal proliferation come；InAlN/Mg simultaneously2N3Superlattice layer forms the two-dimensional electron gas of high concentration, the horizontal stroke of two-dimensional electron gas
Very high to mobility, accelerate the extending transversely of electronics, macroscopically electric current passes through InAlN/Mg2N3Effective during superlattice layer
Extension is come, so that the distribution of luminescent layer electric current becomes uniform, and then is conducive to lifting the luminous efficiency of LED.
Embodiment 2
The Application Example of the LED extensional superlattice growing method of the present invention presented below, its epitaxial structure is referring to Fig. 1.
With MOCVD next life long high brightness GaN-based LED.Using high-purity H2Or high-purity N2Or high-purity H2And high-purity N2Gaseous mixture
Body is as carrier gas, high-purity N H3As N source, metal organic source trimethyl gallium (TMGa) is as gallium source, trimethyl indium (TMIn) conduct
Indium source, N type dopant is silane (SiH4), as silicon source, P-type dopant is two luxuriant magnesium (CP to trimethyl aluminium (TMAl)2Mg), serve as a contrast
Bottom is (0001) surface sapphire, and reaction pressure is between 70mbar to 900mbar.Concrete growth pattern is as follows：
Step 101, process substrate：
In 1000 DEG C -1100 DEG C of H2Under atmosphere, it is passed through the H of 100L/min-130L/min2, keep reaction cavity pressure
100mbar-300mbar, processes Sapphire Substrate 5min-10min.
Step 102, low temperature growth buffer layer GaN：
Reduce temperature to 500 DEG C -600 DEG C, keep reaction cavity pressure 300mbar-600mbar, being passed through flow is
10000sccm-20000sccm NH3(sccm is that standard milliliters are per minute), TMGa, 100L/min- of 50sccm-100sccm
The H of 130L/min2, growth thickness is the low temperature buffer layer GaN of 20nm-40nm on a sapphire substrate；
Rise high-temperature to 1000 DEG C -1100 DEG C, keep reaction cavity pressure 300mbar-600mbar, being passed through flow is
30000sccm-40000sccm NH3, the H of 100L/min-130L/min2, keeping temperature is stable, continues 300s-500s, will be low
Warm cushion GaN corrodes into irregular island.
Step 103, growth undope GaN layer：
Increase the temperature to 1000 DEG C -1200 DEG C, keep reaction cavity pressure 300mbar-600mbar, being passed through flow is
The NH of 30000sccm-40000sccm3, 200sccm-400sccm TMGa, 100L/min-130L/min H2, continued propagation 2
μm -4 μm of the GaN layer that undopes.
Step 104, the N-type GaN layer of growth doping Si：
Keep reaction cavity pressure, temperature-resistant, be passed through the NH that flow is 30000sccm-60000sccm3、200sccm-
The H of TMGa, 100L/min-130L/min of 400sccm2, the SiH of 20sccm-50sccm4, 3 μm -4 μm doping Si of continued propagation
N-type GaN, Si doping content 5E18atoms/cm3-1E19atoms/cm3.(wherein, 1E19 represents 10 19 powers namely
1*1019, by that analogy, atoms/cm3For doping content unit, similarly hereinafter)
Step 105, growth InAlN/Mg2N3Superlattice layer：
Described growth InAlN/Mg2N3Superlattice layer, specially：
Keep reaction cavity pressure 400mbar-500mbar, 900 DEG C -1000 DEG C of keeping temperature, being passed through flow is
The NH of 30000sccm-60000sccm3, 200sccm-300sccm TMAl, 100L/min-130L/min N2、1000sccm-
The TMIn of 2000sccm, growth thickness is the InAIN layer of 10nm-20nm；
Keep reaction cavity pressure 400mbar-500mbar, 900 DEG C -1000 DEG C of keeping temperature, being passed through flow is 50000-
The NH of 70000sccm3, the H of 100-130L/min2, the Cp of 1200-2500sccm2Mg grows the Mg of 5-15nm2N3Layer；
InAIN layer described in cyclical growth and described Mg2N3Layer, growth cycle is 10-20,
Grow described InAIN layer layer and grow described Mg2N3The order of layer is interchangeable.
Step 106, growth luminescent layer：
Keep reaction cavity pressure 300mbar-400mbar, 700 DEG C -750 DEG C of temperature, being passed through flow is 50000sccm-
The NH of 70000sccm3, 20sccm-40sccm TMGa, 1500sccm-2000sccm TMIn, 100L/min-130L/min
N2, the thickness of growth doping In is the In of 2.5nm-3.5nmxGa(1-x)N layer, x=0.20-0.25, emission wavelength 450nm-
455nm；
Then rise high-temperature to 750 DEG C -850 DEG C, keep reaction cavity pressure 300mbar-400mbar, being passed through flow is
The NH of 50000sccm-70000sccm3, 20sccm-100sccm TMGa, 100L/min-130L/min N2, grow 8nm-
The GaN layer of 15nm；
Repeat InxGa(1-x)The growth of N, then repeats the growth of GaN, alternating growth InxGa(1-x)N/GaN luminescent layer, control
Periodicity processed is 7-15.
Step 107, growing P-type AlGaN layer：
Keep reaction cavity pressure 200mbar-400mbar, 900 DEG C -950 DEG C of temperature, being passed through flow is 50000sccm-
The NH of 70000sccm3, 30sccm-60sccm TMGa, 100L/min-130L/min H2, 100sccm-130sccm
The Cp of TMAl, 1000sccm-1300sccm2The p-type AlGaN layer of Mg, continued propagation 50nm-100nm, Al doping content
1E20atoms/cm3-3E20atoms/cm3, Mg doping content 1E19atoms/cm3-1E20atoms/cm3.
Step 108, the p-type GaN layer of growth doping Mg：
Keep reaction cavity pressure 400mbar-900mbar, 950 DEG C -1000 DEG C of temperature, being passed through flow is 50000sccm-
The NH of 70000sccm3, 20sccm-100sccm TMGa, 100L/min-130L/min H2, 1000sccm-3000sccm
Cp2The p-type GaN layer mixing Mg of Mg, continued propagation 50nm-200nm, Mg doping content 1E19atoms/cm3-1E20atoms/
cm3.
Step 109, cooling down：
It is cooled to 650 DEG C -680 DEG C, be incubated 20min-30min, be then switched off heating system, close to gas system, with stove
Cooling.
Embodiment 3
A kind of routine LED extensional superlattice growing method presented below is as the comparative example of the present invention.
The growing method of conventional LED extension is (epitaxial layer structure is referring to Fig. 2)：
1st, in 1000 DEG C -1100 DEG C of H2Under atmosphere, it is passed through the H of 100L/min-130L/min2, keep reaction cavity pressure
100mbar-300mbar, processes Sapphire Substrate 5min-10min.
2.1st, reduce temperature to 500 DEG C -600 DEG C, keep reaction cavity pressure 300mbar-600mbar, being passed through flow is
10000sccm-20000sccm NH3(sccm is that standard milliliters are per minute), TMGa, 100L/min- of 50sccm-100sccm
The H of 130L/min2, growth thickness is the low temperature buffer layer GaN of 20nm-40nm on a sapphire substrate；
2.2nd, rise high-temperature to 1000 DEG C -1100 DEG C, keep reaction cavity pressure 300mbar-600mbar, being passed through flow is
30000sccm-40000sccm NH3, the H of 100L/min-130L/min2, keeping temperature is stable, continues 300s-500s, will be low
Warm cushion GaN corrodes into irregular island.
3rd, increase the temperature to 1000 DEG C -1200 DEG C, keep reaction cavity pressure 300mbar-600mbar, being passed through flow is
The NH of 30000sccm-40000sccm3, 200sccm-400sccm TMGa, 100L/min-130L/min H2, continued propagation 2
μm -4 μm of the GaN layer that undopes.
4th, keep reaction cavity pressure, temperature-resistant, be passed through the NH that flow is 30000sccm-60000sccm3、200sccm-
The H of TMGa, 100L/min-130L/min of 400sccm2, the SiH of 20sccm-50sccm4, 3 μm -4 μm doping Si of continued propagation
N-type GaN, Si doping content 5E18atoms/cm3-1E19atoms/cm3.
5th, keep reaction cavity pressure, temperature-resistant, be passed through the NH that flow is 30000sccm-60000sccm3、200sccm-
The H of TMGa, 100L/min-130L/min of 400sccm2, the SiH of 2sccm-10sccm4, continued propagation 200nm-400nm doping
N-type GaN of Si, Si doping content 5E17atoms/cm3-1E18atoms/cm3.
6th, reaction cavity pressure 300mbar-400mbar, 700 DEG C -750 DEG C of temperature are kept, being passed through flow is 50000sccm-
The NH of 70000sccm3, 20sccm-40sccm TMGa, 1500sccm-2000sccm TMIn, 100L/min-130L/min
N2, the thickness of growth doping In is the In of 2.5nm-3.5nmxGa(1-x)N layer, x=0.20-0.25, emission wavelength 450nm-
455nm；Then rise high-temperature to 750 DEG C -850 DEG C, keep reaction cavity pressure 300mbar-400mbar, being passed through flow is
The NH of 50000sccm-70000sccm3, 20sccm-100sccm TMGa, 100L/min-130L/min N2, grow 8nm-
The GaN layer of 15nm；Repeat InxGa(1-x)The growth of N, then repeats the growth of GaN, alternating growth InxGa(1-x)N/GaN lights
Layer, controlling cycle number is 7-15.
7th, reaction cavity pressure 200mbar-400mbar, 900 DEG C -950 DEG C of temperature are kept, being passed through flow is 50000sccm-
The NH of 70000sccm3, 30sccm-60sccm TMGa, 100L/min-130L/min H2, 100sccm-130sccm
The Cp of TMAl, 1000sccm-1300sccm2The p-type AlGaN layer of Mg, continued propagation 50nm-100nm, Al doping content
1E20atoms/cm3-3E20atoms/cm3, Mg doping content 1E19atoms/cm3-1E20atoms/cm3.
8th, reaction cavity pressure 400mbar-900mbar, 950 DEG C -1000 DEG C of temperature are kept, being passed through flow is 50000sccm-
The NH of 70000sccm3, 20sccm-100sccm TMGa, 100L/min-130L/min H2, 1000sccm-3000sccm
Cp2The p-type GaN layer mixing Mg of Mg, continued propagation 50nm-200nm, Mg doping content 1E19atoms/cm3-1E20atoms/
cm3.
9th, it is cooled to 650 DEG C -680 DEG C, is incubated 20min-30min, be then switched off heating system, close to gas system, with
Stove cools down.
On same board, the growing method (method of comparative example) according to conventional LED prepares sample 1, according to
The method of this patent description prepares sample 2；Sample 1 and sample 2 epitaxial growth method parameter difference are the present invention in growth
Growth InAlN/Mg is introduced after the N-type GaN layer of doping Si2N3The step of superlattice layer, i.e. step 105 in embodiment 2, step
105 is entirely different with the 5th step in comparative example, the growth conditions just the same (referring to table 1) of the other epitaxial layer of growth.
Plate ITO layer about 150nm under sample 1 and sample 2 process conditions before identical, under the conditions of identical, plate Cr/Pt/Au
Electrode about 1500nm, plating SiO under the conditions of identical2About 100nm, then at identical conditions by sample grinding and cutting
Become the chip particle of 635 μm * 635 μm (25mil*25mil), then sample 1 and sample 2 each select 100 in same position
Crystal grain, under identical packaging technology, is packaged into white light LEDs.Then tested under the conditions of driving current 350mA using integrating sphere
Sample 1 and the photoelectric properties of sample 2.
Table 1 is sample 1 and sample 2 growth parameter(s) contrast table, and table 2 is the electrical parameter contrast table of sample 1 and sample 2.
The contrast of table 1 growth parameter(s)
Table 2 sample 1 and the comparison of sample 2 product electrical parameter
Be can be seen that by the Data Comparison of table 2, compared with sample 1, light efficiency brings up to sample 2 from 134.5lm/w
145.3lm/w, voltage is reduced to 3.15V from 3.22V, and backward voltage rises to 37.03V from 36V, and emission wavelength reduces, electric leakage
Reduce, the antistatic yield of 2KV brings up to 94.20% from 92.50%, it therefore follows that to draw a conclusion：
The growing method being provided by this patent, LED light effect improves, and brightness significantly improves, other every LED electrical parameters
Also improve.The scheme that experimental data demonstrates this patent can be obviously improved the feasibility of LED product light efficiency.
By various embodiments above, the beneficial effect that the application exists is：
LED extensional superlattice growing method of the present invention, compared with conventional method, in the N-type GaN layer of described growth doping Si
Afterwards, grow InAlN/Mg before growth luminescent layer2N3Superlattice layer.New material InAlN/Mg2N3Superlattice layer, utilizes
Mg2N3High energy band as gesture build stop electronics too fast by N Es-region propagations to luminescent layer, the more crowded electronics of longitudinal propagation runs into
Mg2N3Can carry stops that suitable horizontal proliferation is come；InAlN/Mg simultaneously2N3Superlattice layer forms the Two-dimensional electron of high concentration
Gas, the lateral transfer rate of two-dimensional electron gas is very high, accelerates the extending transversely of electronics, and macroscopically electric current passes through InAlN/Mg2N3Super
Come by effective extension during lattice layer, so that the distribution of luminescent layer electric current becomes uniform, and then improve the luminous of LED
Efficiency, makes every electrical parameter of LED improve simultaneously.
Those skilled in the art are it should be appreciated that embodiments herein can be provided as method, device or computer program
Product.Therefore, the application can be using complete hardware embodiment, complete software embodiment or the reality combining software and hardware aspect
Apply the form of example.And, the application can be using in one or more computers wherein including computer usable program code
The upper computer program implemented of usable storage medium (including but not limited to magnetic disc store, CD-ROM, optical memory etc.) produces
The form of product.
Described above illustrate and describes some preferred embodiments of the application, but as previously mentioned it should be understood that the application
Be not limited to form disclosed herein, be not to be taken as the exclusion to other embodiment, and can be used for various other combinations,
Modification and environment, and can be in invention contemplated scope described herein, by technology or the knowledge of above-mentioned teaching or association area
It is modified.And the change that those skilled in the art are carried out and change without departing from spirit and scope, then all should be in this Shen
Please be in the protection domain of claims.
Claims (9)
1. a kind of LED extensional superlattice growing method is it is characterised in that include successively：Process substrate, low temperature growth buffer layer
GaN, growth undope GaN layer, growth doping Si N-type GaN layer, growth luminescent layer, growing P-type AlGaN layer, growth doping Mg
P-type GaN layer, cooling down,
After the N-type GaN layer of described growth doping Si, before described growth luminescent layer, also include：Growth InAlN/Mg2N3Super
Lattice layer,
Described growth InAlN/Mg2N3Superlattice layer, specially：
Keep reaction cavity pressure 400mbar-500mbar, 900 DEG C -1000 DEG C of keeping temperature, being passed through flow is 30000sccm-
The NH of 60000sccm3, 200sccm-300sccm TMAl, 100L/min-130L/min N2, 1000sccm-2000sccm
TMIn, growth thickness is the InAIN layer of 10nm-20nm；
Keep reaction cavity pressure 400mbar-500mbar, 900 DEG C -1000 DEG C of keeping temperature, being passed through flow is 50000-
The NH of 70000sccm3, the H of 100-130L/min2, the Cp of 1200-2500sccm2Mg grows the Mg of 5-15nm2N3Layer；
InAIN layer described in cyclical growth and described Mg2N3Layer, growth cycle is 10-20,
Or, under the conditions of above-mentioned same process, first grow described Mg2N3Layer, InAIN layer described in regrowth, then periodically follow
The 10-20 cycle of ring.
2. according to claim 1 LED extensional superlattice growing method it is characterised in that
Described process substrate, further for：In 1000 DEG C -1100 DEG C of H2Under atmosphere, it is passed through the H of 100L/min-130L/min2,
Keep reaction cavity pressure 100mbar-300mbar, process Sapphire Substrate 5min-10min.
3. according to claim 1 LED extensional superlattice growing method it is characterised in that
Described low temperature growth buffer layer, further for：
Reduce temperature to 500 DEG C -600 DEG C, keep reaction cavity pressure 300mbar-600mbar, being passed through flow is 10000sccm-
20000sccm NH3, 50sccm-100sccm TMGa, 100L/min-130L/min H2, grow thick on a sapphire substrate
Spend the low temperature buffer layer GaN for 20nm-40nm；
Rise high-temperature to 1000 DEG C -1100 DEG C, keep reaction cavity pressure 300mbar-600mbar, being passed through flow is
30000sccm-40000sccm NH3, the H of 100L/min-130L/min2, keeping temperature is stable, continues 300s-500s, will be low
Warm cushion GaN corrodes into irregular island.
4. according to claim 1 LED extensional superlattice growing method it is characterised in that
Described growth undopes GaN layer, further for：
Increase the temperature to 1000 DEG C -1200 DEG C, keep reaction cavity pressure 300mbar-600mbar, being passed through flow is
The NH of 30000sccm-40000sccm3, 200sccm-400sccm TMGa, 100L/min-130L/min H2, continued propagation 2
μm -4 μm of the GaN layer that undopes.
5. according to claim 1 LED extensional superlattice growing method it is characterised in that
Described growth doping Si N-type GaN layer, further for：
Keep reaction cavity pressure, temperature-resistant, be passed through the NH that flow is 30000sccm-60000sccm3、200sccm-400sccm
TMGa, 100L/min-130L/min H2, the SiH of 20sccm-50sccm4, the N-type of 3 μm -4 μm doping Si of continued propagation
GaN, Si doping content 5E18atoms/cm3-1E19atoms/cm3.
6. according to claim 1 LED extensional superlattice growing method it is characterised in that
Described growth luminescent layer, further for：
Keep reaction cavity pressure 300mbar-400mbar, 700 DEG C -750 DEG C of temperature, being passed through flow is 50000sccm-
The NH of 70000sccm3, 20sccm-40sccm TMGa, 1500sccm-2000sccm TMIn, 100L/min-130L/min
N2, the thickness of growth doping In is the In of 2.5nm-3.5nmxGa(1-x)N layer, x=0.20-0.25, emission wavelength 450nm-
455nm；
Then rise high-temperature to 750 DEG C -850 DEG C, keep reaction cavity pressure 300mbar-400mbar, being passed through flow is
The NH of 50000sccm-70000sccm3, 20sccm-100sccm TMGa, 100L/min-130L/min N2, grow 8nm-
The GaN layer of 15nm；
Repeat InxGa(1-x)The growth of N, then repeats the growth of GaN, alternating growth InxGa(1-x)N/GaN luminescent layer, controls week
Issue is 7-15.
7. according to claim 1 LED extensional superlattice growing method it is characterised in that
Described growing P-type AlGaN layer, further for：
Keep reaction cavity pressure 200mbar-400mbar, 900 DEG C -950 DEG C of temperature, being passed through flow is 50000sccm-
The NH of 70000sccm3, 30sccm-60sccm TMGa, 100L/min-130L/min H2, 100sccm-130sccm
The Cp of TMAl, 1000sccm-1300sccm2The p-type AlGaN layer of Mg, continued propagation 50nm-100nm, Al doping content
1E20atoms/cm3-3E20atoms/cm3, Mg doping content 1E19atoms/cm3-1E20atoms/cm3.
8. according to claim 1 LED extensional superlattice growing method it is characterised in that
Described growth doping Mg p-type GaN layer, further for：
Keep reaction cavity pressure 400mbar-900mbar, 950 DEG C -1000 DEG C of temperature, being passed through flow is 50000sccm-
The NH of 70000sccm3, 20sccm-100sccm TMGa, 100L/min-130L/min H2, 1000sccm-3000sccm
Cp2The p-type GaN layer mixing Mg of Mg, continued propagation 50nm-200nm, Mg doping content 1E19atoms/cm3-1E20atoms/
cm3.
9. according to claim 1 LED extensional superlattice growing method it is characterised in that
Described cooling down, further for：
It is cooled to 650 DEG C -680 DEG C, be incubated 20min-30min, be then switched off heating system, close to gas system, along with the furnace cooling.
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| CN106876538A (en) * | 2017-02-16 | 2017-06-20 | 湘能华磊光电股份有限公司 | A kind of LED epitaxial growing method and light emitting diode |
| CN106887485A (en) * | 2017-03-01 | 2017-06-23 | 湘能华磊光电股份有限公司 | A kind of LED epitaxial growing method and light emitting diode |
| CN110635006A (en) * | 2019-08-28 | 2019-12-31 | 映瑞光电科技(上海)有限公司 | GaN-based light emitting diode epitaxial structure |
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