CN106876538A - A kind of LED epitaxial growing method and light emitting diode - Google Patents
A kind of LED epitaxial growing method and light emitting diode Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 48
- 239000011777 magnesium Substances 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 21
- 239000010980 sapphire Substances 0.000 claims abstract description 21
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 17
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000001816 cooling Methods 0.000 claims abstract description 14
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 14
- 238000011282 treatment Methods 0.000 claims abstract description 14
- 239000007789 gas Substances 0.000 claims description 7
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- 238000010438 heat treatment Methods 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
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- 230000006641 stabilisation Effects 0.000 claims description 3
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- 230000026267 regulation of growth Effects 0.000 description 2
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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Abstract
The present invention discloses a kind of LED epitaxial growing method, including：Treatment Sapphire Substrate, low temperature growth buffer layer GaN, the N-type GaN layer for growing the GaN layer that undopes, growing doping Si, growth MgInAlN/SiGaN superlattice layers, growth InxGa(1‑x)N/GaN luminescent layers, growing P-type AlGaN layer, growth are mixed the p-type GaN layer of magnesium, cooling down and obtain light emitting diode.The present invention improves the luminous efficiency of LED.
Description
Technical field
The present invention relates to the technical field of light emitting diode, more particularly, to a kind of LED epitaxial growth side
Method and light emitting diode.
Background technology
Light emitting diode (Light Emitting Diode, abbreviation LED) is a kind of solid state lighting device, because of its volume
Small, power consumption is low, long service life, brightness are high, environmentally friendly, it is sturdy and durable the advantages of approved by consumers in general.At present, it is domestic
The scale for producing LED is also progressively expanding, and with the improvement of people ' s living standards, in the market is to lifting LED luminance and light efficiency
Demand is growing day by day, and being desirable to of user's extensive concern obtains that more power saving, brightness is higher, the more preferable LED of light efficiency, and this is just to LED
Production propose requirement higher.The more preferable LED of luminous efficiency how is grown to be increasingly subject to pay attention to.
And LED epitaxial layers play an important role as the important component of LED to LED luminous efficiencies, because
The raising of epitaxial layer crystal mass, can cause that the performance of LED component is lifted, and then lift luminous efficiency, the longevity of LED
Life, ageing resistance, antistatic effect, stability.
Traditional LED structure includes following epitaxial structure：Substrate Sapphire Substrate, low temperature buffer layer GaN layer, undope
GaN layer, N-type GaN layer, the luminescent layer of doping Si are (by InxGa(1-x)N layers and GaN layer cyclical growth are obtained), p-type AlGaN layer,
Mix p-type GaN layer, ITO layer, the protective layer SiO of Mg2Layer, P electrode and N electrode.
Traditional LED is in the N-type GaN layer of the doping Si that Sapphire Substrate epitaxial growth is obtained, it is impossible to stop that electronics is passed
Defeated speed, causes electronics crowded after the electric transmission of excessive velocities to luminescent layer, so that CURRENT DISTRIBUTION is uneven, causes
The resistance of N-type GaN layer is uprised, and then electric current falls in the luminescent layer internal consumption of LED and LED luminous efficiencies occurs in causing LED
The problem of reduction.
Therefore it provides a kind of, to improve LED epitaxial structure and lift the scheme of LED luminous efficiencies be this area urgently to be resolved hurrily
Problem.
The content of the invention
In view of this, the invention provides a kind of LED epitaxial growing method and light emitting diode, solve existing
There is the technical problem of luminous efficiency reduction caused by CURRENT DISTRIBUTION is uneven in LED epitaxial structure in technology.
In order to solve the above-mentioned technical problem, the present invention proposes a kind of LED epitaxial growing method, including：Treatment is blue
Jewel substrate, low temperature growth buffer layer GaN, the N-type GaN layer for growing the GaN layer that undopes, growing doping Si, growth MgInAlN/
SiGaN superlattice layers, growth InxGa(1-x)The p-type GaN layer of magnesium, cooling are mixed in N/GaN luminescent layers, growing P-type AlGaN layer, growth
Cooling obtains light emitting diode；Wherein,
Growth MgInAlN/SiGaN superlattice layers, further include：
Cavity pressure is being reacted for 500-750mbar, temperature are 950-1000 DEG C, are passed through flow for 50000-55000sccm
NH3, 50-70sccm TMGa, 90-110L/min H2, 1200-1400sccm TMIn, 100-200sccm TMAl,
The Cp of 900-1000sccm2The SiH of Mg, 20-30sccm4Under conditions of, grow MgInAlN/SiGaN superlattice layers：
Cavity pressure is being reacted for 500-750mbar, temperature are 950-1000 DEG C, are passed through flow for 50000-55000sccm
NH3, 100-200sccm TMAl, 90-110L/min H2, 1200-1400sccm TMIn and 900-1000sccm
Cp2Under conditions of Mg, MgInAlN layers of growth 4-7nm, wherein, In doping concentrations are 3E19-4E19atom/cm3, Mg adulterates dense
It is 1E19-1E20atom/cm to spend3；
Cavity pressure is being reacted for 500-750mbar, temperature are 950-1000 DEG C, are passed through flow for 50000-55000sccm
NH3, 90-110L/min H2, 50-70sccm TMGa, 20-30sccm SiH4Under conditions of, growth thickness is 8-15nm
SiGaN layers, wherein, Si doping concentrations be 1E18-5E18atom/cm3；
Cyclical growth MgInAlN layers and SiGaN layers obtains MgInAlN/SiGaN superlattice layers, wherein, growth cycle is
4-20；
Cooling down obtains light emitting diode, further includes：
20-30min is incubated after being cooled to 650-680 DEG C, heating system is then switched off, is closed and obtained to gas system furnace cooling
To light emitting diode.
Further, wherein, treatment Sapphire Substrate be：
Under 1000-1100 DEG C of hydrogen atmosphere, the H of 100L/min-130L/min is passed through2, keep reaction cavity pressure be
Under conditions of 100-300mbar, treatment Sapphire Substrate 5-10 minutes.
Further, wherein, low temperature growth buffer layer GaN be：
Temperature be 500-600 DEG C, reaction cavity pressure be 300-600mbar, to be passed through flow be 10000-20000sccm
NH3, 50-100sccm TMGa and 100L/min-130L/min H2Under conditions of, growth thickness is on a sapphire substrate
The low temperature buffer layer GaN of 20-40nm.
Further, wherein, the method also includes：
High-temperature is risen to 1000-1100 DEG C, it is 300-600mbar to keep reaction cavity pressure, is passed through flow for 30000-
The NH of 40000sccm3And the H of 100L/min-130L/min2Under conditions of, keeping temperature stabilization continues 300-500 seconds will be described
Low temperature buffer layer GaN corrodes into irregular island.
Further, wherein, the growth GaN layer that undopes is：
Temperature be 1000-1200 DEG C, reaction cavity pressure be 300-600mbar, be passed through flow be 30000-40000sccm
NH3, 200-400sccm TMGa and 100-130L/min H2Under conditions of, continued propagation thickness undopes for 2-4 μm
GaN layer.
Further, wherein, growth doping Si N-type GaN layer be：
Cavity pressure is being reacted for 300-600mbar, temperature are 1000-1200 DEG C, are passed through flow for 30000-60000sccm
NH3, 200-400sccm TMGa, 100-130L/min H2And the SiH of 20-50sccm4Under conditions of, continued propagation thickness
It is the N-type GaN layer of 3-4 μm of doping Si, wherein, Si doping concentrations are 5E18-1E19atom/cm3。
Further, wherein, grow InxGa(1-x)N/GaN luminescent layers are：
It is that 300-400mbar, temperature are 700-750 DEG C, are passed through flow for 50000-70000sccm in reaction cavity pressure
NH3, 20-40sccm TMGa, 1500-2000sccm TMIn and 100-130L/min N2Under conditions of, growth thickness is
The In of the doping In of 2.5-3.5nmxGa(1-x)N layers (x=0.20-0.25), emission wavelength 450-455nm；
High-temperature is risen to 750-850 DEG C, is 300-400mbar, is passed through flow for 50000- in reaction cavity pressure
The NH of 70000sccm3, 20-100sccm TMGa and 100-130L/min N2Under conditions of, growth thickness is 8-15nm's
GaN layer；
In described in periodicity alternating growthxGa(1-x)N layers obtains In with GaN layerxGa(1-x)N/GaN luminescent layers, wherein, growth
Periodicity is 7-15.
Further, wherein, growing P-type AlGaN layer is：
It is that 200-400mbar, temperature are 900-950 DEG C, are passed through flow for 50000-70000sccm in reaction cavity pressure
NH3, 30-60sccm TMGa, 100-130L/min H2, 100-130sccm TMAl and 1000-1300sccm Cp2Mg's
Under the conditions of, continued propagation thickness is the p-type AlGaN layer of 50-100nm, wherein, Al doping concentrations are 1E20-3E20atom/cm3,
Mg doping concentrations 1E19-1E20atom/cm3。
Further, wherein, growth is mixed the p-type GaN layer of magnesium and is：
Cavity pressure is being reacted for 400-900mbar, temperature are 950-1000 DEG C, are passed through flow for 50000-70000sccm
NH3, 20-100sccm TMGa, 100-130L/min H2And the Cp of 1000-3000sccm2Under conditions of Mg, continued propagation
Thickness is the p-type GaN layer for mixing magnesium of 50-200nm, wherein, Mg doping concentrations are 1E19-1E20atom/cm3。
On the other hand, the present invention also provides a kind of light emitting diode, includes successively from the bottom to top：Sapphire Substrate, low temperature
Cushion GaN, the GaN layer that undopes, N-type GaN layer, MgInAlN/SiGaN superlattice layers, the In of doping SixGa(1-x)N/GaN sends out
Photosphere, p-type AlGaN layer and mix the p-type GaN layer of magnesium；Wherein, the MgInAlN/SiGaN superlattice layers are obtained by following steps：
Cavity pressure is being reacted for 500-750mbar, temperature are 950-1000 DEG C, are passed through flow for 50000-55000sccm
NH3, 50-70sccm TMGa, 90-110L/min H2, 1200-1400sccm TMIn, 100-200sccm TMAl,
The Cp of 900-1000sccm2The SiH of Mg, 20-30sccm4Under conditions of, grow MgInAlN/SiGaN superlattice layers：
Cavity pressure is being reacted for 500-750mbar, temperature are 950-1000 DEG C, are passed through flow for 50000-55000sccm
NH3, 100-200sccm TMAl, 90-110L/min H2, 1200-1400sccm TMIn and 900-1000sccm
Cp2Under conditions of Mg, MgInAlN layers of growth 4-7nm, wherein, In doping concentrations are 3E19-4E19atom/cm3, Mg adulterates dense
It is 1E19-1E20atom/cm to spend3；
Cavity pressure is being reacted for 500-750mbar, temperature are 950-1000 DEG C, are passed through flow for 50000-55000sccm
NH3, 90-110L/min H2, 50-70sccm TMGa, 20-30sccm SiH4Under conditions of, SiGaN layers is grown, its
In, Si doping concentrations are 1E18-5E18atom/cm3；
Cyclical growth MgInAlN layers and SiGaN layers obtains MgInAlN/SiGaN superlattice layers, wherein, growth cycle is
4-20。
Compared with prior art, LED epitaxial growing method of the invention and light emitting diode, realize as follows
Beneficial effect：
(1) LED epitaxial growing method of the present invention and light emitting diode, in the N-type GaN layer of doping Si
Upper growth MgInAlN/SiGaN superlattice layers, electronics is stopped by the use of SiGaN layers of high energy band as gesture is of heap of stone, prevents electronics too fast
Luminescent layer is traveled to by the N-type GaN layer of the Si that adulterates so that when the crowded electronics of longitudinal propagation runs into SiGaN layers, by SiGaN
Layer high energy band stop and suitably horizontal proliferation come so that balanced current distribution in LED epitaxial structure, so as to avoid
The problem that resistance is uprised caused by CURRENT DISTRIBUTION is uneven in LED epitaxial structure, improves the luminous efficiency of LED.
(2) LED epitaxial growing method of the present invention and light emitting diode, in the N-type GaN layer of doping Si
Upper growth MgInAlN/SiGaN superlattice layers, the MgInAlN/SiGaN superlattice layers can form the Two-dimensional electron of high concentration
Gas, using the horizontal high mobility of two-dimensional electron gas, accelerates the extending transversely of electronics in LED so that macroscopically electric current passes through
Come by effective spreading during MgInAlN/SiGaN superlattice layers so that the distribution of luminescent layer electric current becomes uniform, MgInAlN/
SiGaN superlattice layers with causing the performance of LED each side to get a promotion.
Certainly, implement any product of the invention must not specific needs reach all the above technique effect simultaneously.
By referring to the drawings to the detailed description of exemplary embodiment of the invention, further feature of the invention and its
Advantage will be made apparent from.
Brief description of the drawings
The accompanying drawing for being combined in the description and constituting a part for specification shows embodiments of the invention, and even
It is used to explain principle of the invention together with its explanation.
Fig. 1 is the schematic flow sheet of LED structure epitaxial growth method in the prior art；
Fig. 2 is that method prepares the structural representation of LED in Fig. 1；
Fig. 3 is the schematic flow sheet of LED epitaxial growing method described in the embodiment of the present invention 1；
Fig. 4 is the knot of the optical diode that LED epitaxial growing method is prepared described in the embodiment of the present invention 1
Structure schematic diagram；
Fig. 5 is the schematic flow sheet of LED epitaxial growing method described in the embodiment of the present invention 2.
Specific embodiment
Describe various exemplary embodiments of the invention in detail now with reference to accompanying drawing.It should be noted that：Unless had in addition
Body illustrates that the part and the positioned opposite of step, numerical expression and numerical value for otherwise illustrating in these embodiments do not limit this
The scope of invention.
The description only actually at least one exemplary embodiment is illustrative below, never as to the present invention
And its any limitation applied or use.
May be not discussed in detail for technology, method and apparatus known to person of ordinary skill in the relevant, but suitable
In the case of, the technology, method and apparatus should be considered as a part for specification.
In all examples shown here and discussion, any occurrence should be construed as merely exemplary, without
It is as limitation.Therefore, other examples of exemplary embodiment can have different values.
It should be noted that：Similar label and letter represents similar terms in following accompanying drawing, therefore, once a certain Xiang Yi
It is defined in individual accompanying drawing, then it need not be further discussed in subsequent accompanying drawing.
Embodiment 1
As depicted in figs. 1 and 2, Fig. 1 is the schematic flow sheet of LED structure epitaxial growth method in the prior art；Fig. 2 is figure
Method prepares the structural representation of LED in 1.LED structure epitaxial growth method comprises the following steps in the prior art：
Step 101, treatment Sapphire Substrate：
Under 1000-1100 DEG C of hydrogen atmosphere, the H of 100L/min-130L/min is passed through2, keep reaction cavity pressure be
100-300mbar (barometric millimeter of mercury), treatment Sapphire Substrate 5-10 minutes.
Step 102, low temperature growth buffer layer GaN：
It is cooled at 500-600 DEG C, keeps reaction cavity pressure 300-600mbar, is passed through flow for 10000-20000sccm
The NH of (sccm remarks standard milliliters are per minute)3, 50-100sccm TMGa and 100L/min-130L/min H2, in sapphire
Grown thickness is the low temperature buffer layer GaN of 20-40nm.
Step 103, low temperature buffer layer GaN corrosion treatments：
High-temperature is risen to 1000-1100 DEG C, reaction cavity pressure 300-600mbar is kept, flow is passed through for 30000-
The NH of 40000sccm3And the H of 100L/min-130L/min2, keeping temperature is stable to continue 300-500 seconds by low temperature buffer layer GaN
Corrode into irregular island.
The GaN layer that step 104, growth undope：
1000-1200 DEG C is increased the temperature to, reaction cavity pressure 300-600mbar is kept, flow is passed through for 30000-
The NH of 40000sccm (sccm remarks standard milliliters are per minute)3, 200-400sccm TMGa and 100-130L/min H2, hold
Continuous growth thickness is 2-4 μm of the GaN layer that undopes.
The N-type GaN layer of step 105, the doping of growth regulation one Si：
Reaction cavity pressure, temperature-resistant is kept, (sccm remarks standard milliliters are every for 30000-60000sccm to be passed through flow
Minute) NH3, 200-400sccm TMGa, 100-130L/min H2And the SiH of 20-50sccm4, continued propagation thickness is
The 3-4 μm first N-type GaN layer of doping Si, wherein, Si doping concentrations 5E18atoms/cm3-1E19atoms/cm3(remarks 1E19
Represent 10 19 powers, by that analogy, atoms/cm3Doping concentration unit is similarly hereinafter).
The N-type GaN layer of step 106, the doping of growth regulation two Si：
Reaction cavity pressure, temperature-resistant is kept, (sccm remarks standard milliliters are every for 30000-60000sccm to be passed through flow
Minute) NH3, 200-400sccm TMGa, 100-130L/min H2And the SiH of 2-10sccm4, continued propagation thickness is
The N-type GaN layer of the second doping Si of 200-400nm, wherein, Si doping concentrations are 5E17-1E18atoms/cm3。
Step 107, growth InxGa(1-x)N/GaN luminescent layers：
It is 700-750 DEG C for 300-400mbar, temperature to keep reaction cavity pressure, is passed through flow for 50000-70000sccm
NH3, 20-40sccm TMGa, 1500-2000sccm TMIn and 100-130L/min N2, growth thickness is 2.5-
The In of the doping In of 3.5nmxGa(1-x)N layers (x=0.20-0.25), emission wavelength 450-455nm；
Then high-temperature is risen to 750-850 DEG C, keeps reaction cavity pressure 300-400mbar to be passed through flow for 50000-
The NH of 70000sccm3, 20-100sccm TMGa and 100-130L/min N2, growth thickness is the GaN layer of 8-15nm；
Then In is repeatedxGa(1-x)N layers of growth, the then repeatedly growth of GaN layer, alternating growth obtains InxGa(1-x)N/
GaN luminescent layers, controlling cycle number is 7-15.
Step 108, growing P-type AlGaN layer：
It is 900-950 DEG C for 200-400mbar, temperature to keep reaction cavity pressure, is passed through flow for 50000-70000sccm
NH3, 30-60sccm TMGa, 100-130L/min H2, 100-130sccm TMAl and 1000-1300sccm
Cp2Mg, continued propagation thickness is the p-type AlGaN layer of 50-100nm, wherein, Al doping concentrations 1E20-3E20, Mg doping concentration
1E19-1E20。
Step 109, growth mix the p-type GaN layer of magnesium：
It is 950-1000 DEG C for 400-900mbar, temperature to keep reaction cavity pressure, is passed through flow for 50000-
The NH of 70000sccm3, 20-100sccm TMGa, 100-130L/min H2And the Cp of 1000-3000sccm2Mg is lasting raw
Thickness long is the p-type GaN layer for mixing magnesium of 50-200nm, wherein, Mg doping concentrations 1E19-1E20.
Step 110, cooling, cooling：
650-680 DEG C is finally cooled to, 20-30min is incubated, heating system is then switched off, is closed gas system of giving, it is cold with stove
But.
The structure of LED includes in Fig. 2：Substrate Sapphire Substrate 201, low temperature buffer layer GaN layer 202, the GaN layer for undoping
203rd, N-type GaN layer 204, the luminescent layer 205 of doping Si are (by InxGa(1-x)N layers and GaN layer cyclical growth are obtained), p-type
AlGaN layer 206, the p-type GaN layer 207 for mixing Mg, ITO layer 208, protective layer SiO2Layer 209, P electrode 210 and N electrode 211.
Operationally, electronics can be propagated the LED prepared by prior art with speed faster by N-type GaN layer
To luminescent layer, the electronics of longitudinal propagation is caused crowded situation occur, causing the distribution of luminescent layer electric current in LED becomes uneven
It is even, and then have influence on the luminous efficiency of LED.In order to solve above mentioned problem of the prior art, the present embodiment provides a kind of as follows
LED epitaxial growing method：
As shown in figure 3, being the schematic flow sheet of LED epitaxial growing method described in this implementation, the method includes
Following steps：
Step 301, treatment Sapphire Substrate.
Step 302, low temperature growth buffer layer GaN.
Step 303, low temperature buffer layer GaN corrosion treatments
Step 304, growth undope GaN layer.
The N-type GaN layer of step 305, growth doping Si.
Step 306, growth MgInAlN/SiGaN superlattice layers：Cavity pressure is being reacted for 500-750mbar, temperature are
950-1000 DEG C, be passed through flow be 50000-55000sccm NH3, 50-70sccm TMGa, 90-110L/min H2、
The Cp of TMAl, 900-1000sccm of TMIn, 100-200sccm of 1200-1400sccm2The SiH of Mg, 20-30sccm4Bar
Under part, MgInAlN/SiGaN superlattice layers are grown.
In some optional embodiments, growth MgInAlN/SiGaN superlattice layers can be：It is in reaction cavity pressure
500-750mbar, temperature be 950-1000 DEG C, be passed through flow be 50000-55000sccm NH3, 100-200sccm
The H of TMAl, 90-110L/min2, 1200-1400sccm TMIn and 900-1000sccm Cp2Under conditions of Mg, 4- is grown
MgInAlN layers of 7nm, wherein, In doping concentrations are 3E19-4E19atom/cm3, Mg doping concentrations are 1E19-1E20atom/
cm3；
Cavity pressure is being reacted for 500-750mbar, temperature are 950-1000 DEG C, are passed through flow for 50000-55000sccm
NH3, 90-110L/min H2, 50-70sccm TMGa, 20-30sccm SiH4Under conditions of, growth thickness is 8-15nm
SiGaN layers, wherein, Si doping concentrations be 1E18-5E18atom/cm3；
Cyclical growth MgInAlN layers and SiGaN layers obtains MgInAlN/SiGaN superlattice layers, wherein, growth cycle is
4-20。
SiGaN layers in MgInAlN/SiGaN superlattice layers has high energy band, and the high energy band by SiGaN layers is used as gesture
It is of heap of stone stop that electronics is too fast luminescent layer is traveled to by N-type GaN layer, it is to avoid electronics is in the crowded feelings for causing resistance to uprise of luminescent layer
Condition so that the distribution of electric current becomes uniform in luminescent layer, and then improves the luminous efficiency of LED.
Step 307, growth InxGa(1-x)N/GaN luminescent layers.
Step 308, growing P-type AlGaN layer.
Step 309, growth mix the p-type GaN layer of magnesium.
Step 310, cooling down obtain light emitting diode：
20-30min is incubated after being cooled to 650-680 DEG C, heating system is then switched off, is closed and obtained to gas system furnace cooling
To light emitting diode.
As shown in figure 4, the knot of the optical diode that the LED epitaxial growing method described in the present embodiment is prepared
Structure schematic diagram, the optical diode includes：Substrate Sapphire Substrate 401, low temperature buffer layer GaN layer 402, the GaN layer for undoping
403rd, N-type GaN layer 404, MgInAlN/SiGaN superlattice layers 405, the luminescent layer 406 of doping Si are (by InxGa(1-x)N layers and GaN
Layer cyclical growth obtain), p-type AlGaN layer 407, the p-type GaN layer 408 for mixing Mg, ITO layer 409, protective layer SiO2Layer 410, P
Electrode 411 and N electrode 412.
Embodiment 2
As shown in figure 5, described in the present embodiment LED epitaxial growing method schematic flow sheet, the method includes
Following steps：
Step 501, treatment Sapphire Substrate：Under 1000-1100 DEG C of hydrogen atmosphere, 100L/min-130L/ is passed through
The H of min2, reaction cavity pressure is kept under conditions of 100-300mbar, to process Sapphire Substrate 5-10 minutes.
Step 502, low temperature growth buffer layer GaN：Temperature be 500-600 DEG C, reaction cavity pressure be 300-600mbar,
It is passed through the NH that flow is 10000-20000sccm3, 50-100sccm TMGa and 100L/min-130L/min H2Condition
Under, growth thickness is the low temperature buffer layer GaN of 20-40nm on a sapphire substrate.
Step 503, low temperature buffer layer GaN corrosion treatments：High-temperature is risen to 1000-1100 DEG C, holding reaction cavity pressure is
300-600mbar, is passed through the NH that flow is 30000-40000sccm3And the H of 100L/min-130L/min2Under conditions of, keep
Temperature stabilization continues the low temperature buffer layer GaN to be corroded into irregular island in 300-500 seconds.
Step 504, growth undope GaN layer：Temperature be 1000-1200 DEG C, reaction cavity pressure be 300-600mbar,
It is passed through the NH that flow is 30000-40000sccm3, 200-400sccm TMGa and 100-130L/min H2Under conditions of, hold
The GaN layer that undopes of continuous 2-4 μm of growth.
The N-type GaN layer of step 505, growth doping Si：Cavity pressure is being reacted for 300-600mbar, temperature are 1000-
1200 DEG C, be passed through flow be 30000-60000sccm NH3, 200-400sccm TMGa, 100-130L/min H2And 20-
The SiH of 50sccm4Under conditions of, continued propagation thickness is the N-type GaN layer of 3-4 μm of doping Si, wherein, Si doping concentrations are
5E18-1E19atom/cm3。
Step 506, growth MgInAlN/SiGaN superlattice layers：Cavity pressure is being reacted for 500-750mbar, temperature are
950-1000 DEG C, be passed through flow be 50000-55000sccm NH3, 50-70sccm TMGa, 90-110L/min H2、
The Cp of TMAl, 900-1000sccm of TMIn, 100-200sccm of 1200-1400sccm2The SiH of Mg, 20-30sccm4Bar
Under part, MgInAlN/SiGaN superlattice layers are grown.
In some optional embodiments, growth MgInAlN/SiGaN superlattice layers can be：It is in reaction cavity pressure
500-750mbar, temperature be 950-1000 DEG C, be passed through flow be 50000-55000sccm NH3, 100-200sccm
The H of TMAl, 90-110L/min2, 1200-1400sccm TMIn and 900-1000sccm Cp2Under conditions of Mg, 4- is grown
MgInAlN layers of 7nm, wherein, In doping concentrations are 3E19-4E19atom/cm3, Mg doping concentrations are 1E19-1E20atom/
cm3；
Cavity pressure is being reacted for 500-750mbar, temperature are 950-1000 DEG C, are passed through flow for 50000-55000sccm
NH3, 90-110L/min H2, 50-70sccm TMGa, 20-30sccm SiH4Under conditions of, SiGaN layers is grown, its
In, Si doping concentrations are 1E18-5E18atom/cm3；
Cyclical growth MgInAlN layers and SiGaN layers obtains MgInAlN/SiGaN superlattice layers, wherein, growth cycle is
4-20.The present embodiment does not limit the priority succession of MgInAlN layers and SiGaN layers, it is also possible to first SiGaN layers of growth, then
MgInAlN layers of growth, then SiGaN layers and MgInAlN layers of periodicity alternating growth obtains MgInAlN/SiGaN superlattice layers.
SiGaN layers in MgInAlN/SiGaN superlattice layers has high energy band, and the high energy band by SiGaN layers is used as gesture
It is of heap of stone stop that electronics is too fast luminescent layer is traveled to by N-type GaN layer, it is to avoid electronics is in the crowded feelings for causing resistance to uprise of luminescent layer
Condition so that the distribution of electric current becomes uniform in luminescent layer, and then improves the luminous efficiency of LED.
Step 507, growth InxGa(1-x)N layers：Cavity pressure is being reacted for 300-400mbar, temperature are 700-750 DEG C, lead to
Inbound traffics are the NH of 50000-70000sccm3, 20-40sccm TMGa, 1500-2000sccm TMIn and 100-130L/
The N of min2Under conditions of, growth thickness is the In of the doping In of 2.5-3.5nmxGa(1-x)N layers (x=0.20-0.25), light ripple
450-455nm long.
Step 508, growth GaN layer：High-temperature is risen to 750-850 DEG C, is 300-400mbar, is passed through in reaction cavity pressure
Flow is the NH of 50000-70000sccm3, 20-100sccm TMGa and 100-130L/min N2Under conditions of, growth thickness
It is the GaN layer of 8-15nm；
Step 509, growth InxGa(1-x)N/GaN luminescent layers：In described in periodicity alternating growthxGa(1-x)N layers and GaN layer
Obtain InxGa(1-x)N/GaN luminescent layers, wherein, growth cycle number is 7-15.The present embodiment does not limit InxGa(1-x)N layers and
The priority succession of GaN layer, it is also possible to first grow GaN layer, regrowth InxGa(1-x)N layers, then periodicity alternating growth GaN layer
And InxGa(1-x)N layers obtains InxGa(1-x)N/GaN luminescent layers.
Step 510, growing P-type AlGaN layer：Cavity pressure is being reacted for 200-400mbar, temperature are 900-950 DEG C, are passed through
Flow is the NH of 50000-70000sccm3, 30-60sccm TMGa, 100-130L/min H2, 100-130sccm TMAl
And the Cp of 1000-1300sccm2Under conditions of Mg, continued propagation thickness is the p-type AlGaN layer of 50-100nm, wherein, Al doping
Concentration is 1E20-3E20atom/cm3, Mg doping concentrations 1E19-1E20atom/cm3。
Step 511, growth mix the p-type GaN layer of magnesium：Cavity pressure is being reacted for 400-900mbar, temperature are 950-1000
DEG C, be passed through flow be 50000-70000sccm NH3, 20-100sccm TMGa, 100-130L/min H2And 1000-
The Cp of 3000sccm2Under conditions of Mg, continued propagation thickness is the p-type GaN layer for mixing magnesium of 50-200nm, wherein, Mg doping is dense
It is 1E19-1E20atom/cm to spend3。
Step 512, cooling down obtain light emitting diode：20-30min is incubated after being cooled to 650-680 DEG C, is then switched off
Heating system, close and obtain light emitting diode to gas system furnace cooling.
Embodiment 3
The present embodiment provides the photism of a kind of light emitting diode of the present invention program and the light emitting diode of traditional scheme
Can comparative example.The control methods of the present embodiment includes following content：
Growing method according to traditional LED prepares sample 1, and the method according to present invention description prepares sample 2；Sample 1
It is with the epitaxial growth method parameter difference of sample 2：The preparation process of sample 2 grown MgInAlN/SiGaN superlattice layers,
Other outer layer growth conditions of sample 1 and sample 2 are just the same (refer to table 1).By sample 1 and sample 2 before identical
The thickness about ITO layer of 150nm is plated under process conditions, and plating thickness is about the Cr/Pt/Au of 1500nm at identical conditions
Electrode, plates the SiO that thickness is about 100nm under the conditions of identical2Protective layer, then at identical conditions by sample grinding and cutting
Into the chip particle of 635 μm * 635 μm (25mil*25mil), then sample 1 and sample 2 each select 100 in same position
Crystal grain, under identical packaging technology, is packaged into white light LEDs.Then tested under the conditions of driving current 350mA using integrating sphere
The photoelectric properties of sample 1 and sample 2.
The following is the electrical test ginseng of the contrast table and sample 1 and sample 2 of the light emitting layer grown parameter of sample 1 and sample 2
Number contrast table.
The contrast table of table 1, light emitting layer grown parameter
Table 2, sample 1 and the product testing electrical property parameter comparison table of sample 2
As can be seen from Table 1 and Table 2：It is right that the data of sample 1 and the product testing electrical property parameter of sample 2 are analyzed
Than the LED light that the LED growing methods that the present invention is provided are prepared is imitated higher, all other LED electrical parameters and also improved, real
Testing data and demonstrate the inventive method can lift the feasibility of LED product light efficiency.
By above-described embodiment, LED epitaxial growing method of the invention and light emitting diode reach
Following beneficial effect：
(1) LED epitaxial growing method of the present invention and light emitting diode, in the N-type GaN layer of doping Si
Upper growth MgInAlN/SiGaN superlattice layers, electronics is stopped by the use of SiGaN layers of high energy band as gesture is of heap of stone, prevents electronics too fast
Luminescent layer is traveled to by the N-type GaN layer of the Si that adulterates so that when the crowded electronics of longitudinal propagation runs into SiGaN layers, by SiGaN
Layer high energy band stop and suitably horizontal proliferation come so that balanced current distribution in LED epitaxial structure, so as to avoid
The problem that resistance is uprised caused by CURRENT DISTRIBUTION is uneven in LED epitaxial structure, improves the luminous efficiency of LED.
(2) LED epitaxial growing method of the present invention and light emitting diode, in the N-type GaN layer of doping Si
Upper growth MgInAlN/SiGaN superlattice layers, the MgInAlN/SiGaN superlattice layers can form the Two-dimensional electron of high concentration
Gas, using the horizontal high mobility of two-dimensional electron gas, accelerates the extending transversely of electronics in LED so that macroscopically electric current passes through
Come by effective spreading during MgInAlN/SiGaN superlattice layers so that the distribution of luminescent layer electric current becomes uniform, MgInAlN/
SiGaN superlattice layers with causing the performance of LED each side to get a promotion.
It should be understood by those skilled in the art that, embodiments of the invention can be provided as method, device or computer program
Product.Therefore, the present invention can be using the reality in terms of complete hardware embodiment, complete software embodiment or combination software and hardware
Apply the form of example.And, the present invention can be used and wherein include the computer of computer usable program code at one or more
The computer program implemented in usable storage medium (including but not limited to magnetic disk storage, CD-ROM, optical memory etc.) is produced
The form of product.
Although being described in detail to some specific embodiments of the invention by example, the skill of this area
Art personnel it should be understood that example above is merely to illustrate, rather than in order to limit the scope of the present invention.The skill of this area
Art personnel to above example it should be understood that can modify without departing from the scope and spirit of the present invention.This hair
Bright scope is defined by the following claims.
Claims (10)
1. a kind of LED epitaxial growing method, it is characterised in that including：Treatment Sapphire Substrate, low temperature growth buffer
Layer GaN, the N-type GaN layer for growing the GaN layer that undopes, growing doping Si, growth MgInAlN/SiGaN superlattice layers, growth
InxGa(1-x)N/GaN luminescent layers, growing P-type AlGaN layer, growth are mixed the p-type GaN layer of magnesium, cooling down and obtain light emitting diode；
Wherein,
Growth MgInAlN/SiGaN superlattice layers, further include：
Reaction cavity pressure be 500-750mbar, temperature be 950-1000 DEG C, be passed through flow be 50000-55000sccm NH3、
The H of TMGa, 90-110L/min of 50-70sccm2, 1200-1400sccm TMIn, 100-200sccm TMAl, 900-
The Cp of 1000sccm2The SiH of Mg, 20-30sccm4Under conditions of, grow MgInAlN/SiGaN superlattice layers：
Reaction cavity pressure be 500-750mbar, temperature be 950-1000 DEG C, be passed through flow be 50000-55000sccm NH3、
The H of TMAl, 90-110L/min of 100-200sccm2, 1200-1400sccm TMIn and 900-1000sccm Cp2The bar of Mg
Under part, MgInAlN layers of growth 4-7nm, wherein, In doping concentrations are 3E19-4E19atom/cm3, Mg doping concentrations are
1E19-1E20atom/cm3；
Reaction cavity pressure be 500-750mbar, temperature be 950-1000 DEG C, be passed through flow be 50000-55000sccm NH3、
The H of 90-110L/min2, 50-70sccm TMGa, 20-30sccm SiH4Under conditions of, growth thickness is 8-15nm's
SiGaN layers, wherein, Si doping concentrations are 1E18-5E18atom/cm3；
Cyclical growth MgInAlN layers and SiGaN layers obtains MgInAlN/SiGaN superlattice layers, wherein, growth cycle is 4-
20；
Cooling down obtains light emitting diode, further includes：
20-30min is incubated after being cooled to 650-680 DEG C, heating system is then switched off, is closed and sent out to gas system furnace cooling
Optical diode.
2. LED epitaxial growing method according to claim 1, it is characterised in that treatment Sapphire Substrate, enters
One step is：
Under 1000-1100 DEG C of hydrogen atmosphere, the H of 100L/min-130L/min is passed through2, it is 100- to keep reaction cavity pressure
Under conditions of 300mbar, treatment Sapphire Substrate 5-10 minutes.
3. LED epitaxial growing method according to claim 1, it is characterised in that low temperature growth buffer layer GaN,
It is further：
Temperature be 500-600 DEG C, reaction cavity pressure be 300-600mbar, be passed through flow be 10000-20000sccm NH3、
The H of the TMGa and 100L/min-130L/min of 50-100sccm2Under conditions of, growth thickness is 20- on a sapphire substrate
The low temperature buffer layer GaN of 40nm.
4. LED epitaxial growing method according to claim 3, it is characterised in that further include：
High-temperature is risen to 1000-1100 DEG C, it is 300-600mbar to keep reaction cavity pressure, is passed through flow for 30000-
The NH of 40000sccm3And the H of 100L/min-130L/min2Under conditions of, keeping temperature stabilization continues 300-500 seconds will be described
Low temperature buffer layer GaN corrodes into irregular island.
5. LED epitaxial growing method according to claim 1, it is characterised in that growth undopes GaN layer, enters
One step is：
Temperature be 1000-1200 DEG C, reaction cavity pressure be 300-600mbar, to be passed through flow be 30000-40000sccm
NH3, 200-400sccm TMGa and 100-130L/min H2Under conditions of, continued propagation thickness is 2-4 μm of the GaN that undopes
Layer.
6. LED epitaxial growing method according to claim 1, it is characterised in that the N-type GaN of growth doping Si
Layer, further for：
It is that 300-600mbar, temperature are 1000-1200 DEG C, are passed through flow for 30000-60000sccm in reaction cavity pressure
NH3, 200-400sccm TMGa, 100-130L/min H2And the SiH of 20-50sccm4Under conditions of, continued propagation thickness is
The N-type GaN layer of 3-4 μm of doping Si, wherein, Si doping concentrations are 5E18-1E19atom/cm3。
7. LED epitaxial growing method according to claim 1, it is characterised in that growth InxGa(1-x)N/GaN
Luminescent layer, further for：
Reaction cavity pressure be 300-400mbar, temperature be 700-750 DEG C, be passed through flow be 50000-70000sccm NH3、
The N of the TMIn and 100-130L/min of TMGa, 1500-2000sccm of 20-40sccm2Under conditions of, growth thickness is 2.5-
The In of the doping In of 3.5nmxGa(1-x)N layers (x=0.20-0.25), emission wavelength 450-455nm；
High-temperature is risen to 750-850 DEG C, is 300-400mbar, is passed through flow for 50000-70000sccm in reaction cavity pressure
NH3, 20-100sccm TMGa and 100-130L/min N2Under conditions of, growth thickness is the GaN layer of 8-15nm；
In described in periodicity alternating growthxGa(1-x)N layers obtains In with GaN layerxGa(1-x)N/GaN luminescent layers, wherein, growth cycle
Number is 7-15.
8. LED epitaxial growing method according to claim 1, it is characterised in that growing P-type AlGaN layer, enters
One step is：
Reaction cavity pressure be 200-400mbar, temperature be 900-950 DEG C, be passed through flow be 50000-70000sccm NH3、
The H of TMGa, 100-130L/min of 30-60sccm2, 100-130sccm TMAl and 1000-1300sccm Cp2The condition of Mg
Under, continued propagation thickness is the p-type AlGaN layer of 50-100nm, wherein, Al doping concentrations are 1E20-3E20atom/cm3, Mg mixes
Miscellaneous concentration 1E19-1E20atom/cm3。
9. LED epitaxial growing method according to claim 1, it is characterised in that the p-type GaN of magnesium is mixed in growth
Layer, further for：
Reaction cavity pressure be 400-900mbar, temperature be 950-1000 DEG C, be passed through flow be 50000-70000sccm NH3、
The H of TMGa, 100-130L/min of 20-100sccm2And the Cp of 1000-3000sccm2Under conditions of Mg, continued propagation thickness is
The p-type GaN layer for mixing magnesium of 50-200nm, wherein, Mg doping concentrations are 1E19-1E20atom/cm3。
10. a kind of light emitting diode, it is characterised in that include successively from the bottom to top：Sapphire Substrate, low temperature buffer layer GaN, no
N-type GaN layer, MgInAlN/SiGaN superlattice layers, the In of doped gan layer, doping SixGa(1-x)N/GaN luminescent layers, p-type AlGaN
Layer and mix the p-type GaN layer of magnesium；Wherein, the MgInAlN/SiGaN superlattice layers are obtained by following steps：
Reaction cavity pressure be 500-750mbar, temperature be 950-1000 DEG C, be passed through flow be 50000-55000sccm NH3、
The H of TMGa, 90-110L/min of 50-70sccm2, 1200-1400sccm TMIn, 100-200sccm TMAl, 900-
The Cp of 1000sccm2The SiH of Mg, 20-30sccm4Under conditions of, grow MgInAlN/SiGaN superlattice layers：
Reaction cavity pressure be 500-750mbar, temperature be 950-1000 DEG C, be passed through flow be 50000-55000sccm NH3、
The H of TMAl, 90-110L/min of 100-200sccm2, 1200-1400sccm TMIn and 900-1000sccm Cp2The bar of Mg
Under part, MgInAlN layers of growth 4-7nm, wherein, In doping concentrations are 3E19-4E19atom/cm3, Mg doping concentrations are
1E19-1E20atom/cm3；
Reaction cavity pressure be 500-750mbar, temperature be 950-1000 DEG C, be passed through flow be 50000-55000sccm NH3、
The H of 90-110L/min2, 50-70sccm TMGa, 20-30sccm SiH4Under conditions of, SiGaN layers is grown, wherein, Si mixes
Miscellaneous concentration is 1E18-5E18atom/cm3；
Cyclical growth MgInAlN layers and SiGaN layers obtains MgInAlN/SiGaN superlattice layers, wherein, growth cycle is 4-
20。
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| CN109888066A (en) * | 2019-03-22 | 2019-06-14 | 湘能华磊光电股份有限公司 | LED epitaxial growth method |
| CN115832134A (en) * | 2023-02-08 | 2023-03-21 | 江西兆驰半导体有限公司 | Light emitting diode epitaxial wafer, preparation method thereof and light emitting diode |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105845788A (en) * | 2016-04-08 | 2016-08-10 | 湘能华磊光电股份有限公司 | LED current extension layer epitaxial growth method |
| CN106299062A (en) * | 2016-09-20 | 2017-01-04 | 湘能华磊光电股份有限公司 | The epitaxial growth method of current extending |
| CN106410000A (en) * | 2016-11-15 | 2017-02-15 | 湘能华磊光电股份有限公司 | LED epitaxial layer growth method |
| CN106409999A (en) * | 2016-11-15 | 2017-02-15 | 湘能华磊光电股份有限公司 | LED epitaxy superlattice growth method |
-
2017
- 2017-02-16 CN CN201710084616.5A patent/CN106876538B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105845788A (en) * | 2016-04-08 | 2016-08-10 | 湘能华磊光电股份有限公司 | LED current extension layer epitaxial growth method |
| CN106299062A (en) * | 2016-09-20 | 2017-01-04 | 湘能华磊光电股份有限公司 | The epitaxial growth method of current extending |
| CN106410000A (en) * | 2016-11-15 | 2017-02-15 | 湘能华磊光电股份有限公司 | LED epitaxial layer growth method |
| CN106409999A (en) * | 2016-11-15 | 2017-02-15 | 湘能华磊光电股份有限公司 | LED epitaxy superlattice growth method |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109888066A (en) * | 2019-03-22 | 2019-06-14 | 湘能华磊光电股份有限公司 | LED epitaxial growth method |
| CN109888066B (en) * | 2019-03-22 | 2021-06-01 | 湘能华磊光电股份有限公司 | LED epitaxial growth method |
| CN115832134A (en) * | 2023-02-08 | 2023-03-21 | 江西兆驰半导体有限公司 | Light emitting diode epitaxial wafer, preparation method thereof and light emitting diode |
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