CN106887485B

CN106887485B - A kind of LED epitaxial growing method and light emitting diode

Info

Publication number: CN106887485B
Application number: CN201710117410.8A
Authority: CN
Inventors: 徐平
Original assignee: Xiangneng Hualei Optoelectrical Co Ltd
Current assignee: Xiangneng Hualei Optoelectrical Co Ltd
Priority date: 2017-03-01
Filing date: 2017-03-01
Publication date: 2019-01-15
Anticipated expiration: 2037-03-01
Also published as: CN106887485A

Abstract

The present invention discloses a kind of LED epitaxial growing method, comprising: processing Sapphire Substrate, growing low temperature buffer layer GaN, grows the GaN layer that undopes, the N-type GaN layer of growth doping Si, growth ZnInGaN/MgAlN/SiInAlN superlattice layer, growth In_xGa_(1‑x)N/GaN luminescent layer, growing P-type AlGaN layer, growth mix p-type GaN layer, the cooling down of magnesium and obtain light emitting diode.The present invention improves the luminous efficiency of LED.

Description

Light-emitting diode epitaxial growth method and light-emitting diode

Technical Field

The invention relates to the technical field of light emitting diodes, in particular to a light emitting diode epitaxial growth method and a light emitting diode.

Background

A Light Emitting Diode (LED) is a solid lighting device, and is accepted by consumers due to its advantages of small size, low power consumption, long service life, high brightness, environmental protection, firmness and durability. At present, the scale of domestic LED production is gradually enlarged, along with the improvement of living standard of people, the market demand for improving LED brightness and lighting effect is increased day by day, users pay attention to the LED which is expected to be more power-saving, higher in brightness and better in lighting effect, and thus higher requirements are provided for LED production; how to grow LEDs with better luminous efficiency is increasingly gaining attention.

The LED epitaxial layer is used as an important component of the LED, so that the LED luminous efficiency plays an extremely important role, and because the crystal quality of the epitaxial layer is improved, the performance of an LED device can be improved, and the luminous efficiency, the service life, the ageing resistance, the antistatic capacity and the stability of the LED are further improved.

Conventional LED structures include the following epitaxial structures: a substrate sapphire substrate, a low temperature buffer layer GaN layer, an undoped GaN layer, an Si-doped N-type GaN layer, and a luminescent layer (composed of In)_xGa_(1-x)N layer and GaN layer periodically grown), P-type AlGaN layer, Mg-doped P-type GaN layer, ITO layer, and protective layer SiO₂A layer, a P electrode and an N electrode.

The traditional LED cannot block the electron transmission speed in an Si-doped N-type GaN layer obtained by epitaxial growth of a sapphire substrate, electrons with too high speed are transmitted to a light-emitting layer to cause electron crowding, so that the current distribution is not uniform, the resistance of the N-type GaN layer is caused to be high, and the current in the LED is consumed in the light-emitting layer of the LED to cause the problem of reduction of the luminous efficiency of the LED.

Therefore, it is an urgent problem to be solved in the art to provide a solution for improving an LED epitaxial structure and increasing the light emitting efficiency of an LED.

Disclosure of Invention

In view of the above, the present invention provides a light emitting diode epitaxial growth method and a light emitting diode, which solve the technical problem of light emitting efficiency reduction caused by uneven current distribution in an LED epitaxial structure in the prior art.

In order to solve the above technical problem, the present invention provides a method for epitaxial growth of a light emitting diode, including: processing a sapphire substrate, growing a low-temperature buffer layer GaN, growing an undoped GaN layer, growing an N-type GaN layer doped with Si, growing a ZnInGaN/MgAlN/SiInAlN superlattice layer, and growing In_xGa_(1-x)The method comprises the following steps of (1) growing an N/GaN light emitting layer, growing a P-type AlGaN layer, growing a P-type GaN layer doped with magnesium, and cooling to obtain a light emitting diode; wherein,

growing a ZnInGaN/MgAlN/SiInAlN superlattice layer, further comprising:

NH with the flow rate of 50000-55000sccm is introduced at the pressure of 500-750mbar in the reaction cavity and the temperature of 950-1000 DEG C₃TMGa of 50-70sccm and H of 90-110L/min₂Growing a ZnInGaN layer with the thickness of 8-15nm under the conditions of 1200-1400sccm TMIn and 900-1200sccm DMZn, wherein the In doping concentration is 3E19-4E19atom/cm³The Zn doping concentration is 1E19-1E20atom/cm³；

Keeping the pressure and the temperature of the reaction cavity unchanged, and introducing NH with the flow rate of 50000-55000sccm₃100-₂And 900 Cp of 1000sccm₂Growing a MgAlN layer with the thickness of 4-7nm under the condition of Mg, wherein the doping concentration of Mg is 1E19-1E20atom/cm³；

Keeping the pressure and the temperature of the reaction cavity unchanged, and introducing NH with the flow rate of 50000-55000sccm₃90-110L/min H₂TMAl of 300 plus 600sccm, TMIn of 1800 plus 2500sccm and SiH of 20-30sccm₄Growing a SiInAlN layer with the thickness of 8-15nm under the condition of (1), wherein the doping concentration of Si is 1E18-5E18atom/cm³；

Periodically growing a ZnInGaN layer, a MgAlN layer and a SiInAlN layer to obtain a ZnInGaN/MgAlN/SiInAlN superlattice layer, wherein the growth period is 5-15;

cooling down and obtaining the light emitting diode, further comprising:

cooling to 650 plus 680 ℃, preserving the temperature for 20-30min, then closing the heating system, closing the gas supply system, and cooling along with the furnace to obtain the light-emitting diode.

Further wherein processing the sapphire substrate is:

introducing H of 100L/min-130L/min under the hydrogen atmosphere of 1000-1100 DEG C₂And treating the sapphire substrate for 5-10 minutes under the condition that the pressure of the reaction chamber is kept at 100-300 mbar.

Further, wherein, growing the low-temperature buffer layer GaN is:

NH with the flow rate of 10000-₃TMGa of 50-100sccm and H of 100-130L/min₂Under the condition of (1), growing a low-temperature buffer layer GaN with the thickness of 20-40nm on the sapphire substrate.

Further, wherein the method further comprises:

raising the temperature to 1000-1100 ℃, keeping the pressure of the reaction chamber at 300-600mbar, and introducing NH with the flow rate of 30000-40000sccm₃And H of 100L/min-130L/min₂The temperature is kept stable for 300-.

Further, wherein, growing the undoped GaN layer is as follows:

NH with the flow rate of 30000-₃200-400sccm TMGa and 100-130L/min H₂Under the conditions of (1), an undoped GaN layer with a thickness of 2-4 μm is continuously grown.

Further, wherein, the growing of the Si-doped N-type GaN layer is as follows:

in the reverse directionNH with the cavity pressure of 300-₃200-400sccm TMGa, 100-130L/min H₂And 20-50sccm SiH₄Under the conditions of (1) continuously growing a Si-doped N-type GaN layer with a thickness of 3-4 μm, wherein the Si doping concentration is 5E18-1E19atom/cm³。

Further, therein, In is grown_xGa_(1-x)The N/GaN light-emitting layer is:

NH with the flow rate of 50000-₃20-40sccm of TMGa, 1500-2000sccm of TMIn and 100-130L/min of N₂In doped with In is grown to a thickness of 2.5 to 3.5nm under the conditions of (1)_xGa_(1-x)An N layer (x is 0.20-0.25) with an emission wavelength of 450-455 nm;

raising the temperature to 750 plus 850 ℃, introducing NH with the flow rate of 50000 plus 70000sccm and the pressure of the reaction chamber of 300 plus 400mbar₃20-100sccm of TMGa and 100-130L/min of N₂Growing a GaN layer with a thickness of 8-15nm under the condition of (1);

periodically and alternately growing the In_xGa_(1-x)N layer and GaN layer to obtain In_xGa_(1-x)And an N/GaN light emitting layer, wherein the number of growth cycles is 7-15.

Further, wherein, growing the P-type AlGaN layer is:

NH with the flow rate of 50000-70000sccm is introduced at the reaction cavity pressure of 200-400mbar and the temperature of 900-950 DEG C₃TMGa 30-60sccm, H100-130L/min₂100-TMAl of 130sccm and 1000-Cp of 1300sccm₂Continuously growing a P-type AlGaN layer with the thickness of 50-100nm under the condition of Mg, wherein the doping concentration of Al is 1E20-3E20atom/cm³Mg doping concentration of 1E19-1E20atom/cm³。

Further, the growing of the magnesium-doped P-type GaN layer comprises:

the pressure in the reaction cavity is 400-900mbar and the temperature is950 ℃ plus 1000 ℃, and NH with the flow rate of 50000 plus 70000sccm₃20-100sccm of TMGa, 100-₂And 1000-Cp of 3000sccm₂Continuously growing a Mg-doped P-type GaN layer with a thickness of 50-200nm under the condition of Mg, wherein the Mg doping concentration is 1E19-1E20atom/cm³。

On the other hand, the invention also provides a light emitting diode, which sequentially comprises the following components from bottom to top: sapphire substrate, low-temperature buffer layer GaN, undoped GaN layer, Si-doped N-type GaN layer, ZnInGaN/MgAlN/SiInAlN superlattice layer, In_xGa_(1-x)The GaN/GaN light-emitting layer comprises an N/GaN light-emitting layer, a P-type AlGaN layer and a P-type GaN layer doped with magnesium; the ZnInGaN/MgAlN/SiInAlN superlattice layer is prepared by the following steps:

And periodically growing a ZnInGaN layer, a MgAlN layer and a SiInAlN layer to obtain a ZnInGaN/MgAlN/SiInAlN superlattice layer, wherein the growth period is 5-15.

Compared with the prior art, the light-emitting diode epitaxial growth method and the light-emitting diode of the invention realize the following beneficial effects:

(1) according to the epitaxial growth method of the light emitting diode and the light emitting diode, the ZnInGaN/MgAlN/SiInAlN superlattice layer is grown on the Si-doped N-type GaN layer, the high-energy band of the SiInAlN layer is used as a potential epitaxy blocking electron, the electron is prevented from being transmitted to the light emitting layer from the Si-doped N-type GaN layer too fast, and when crowded electrons transmitted longitudinally meet the SiInAlN layer, the crowded electrons are blocked by the high-energy band of the SiInAlN layer and properly spread transversely, so that the current in the LED epitaxial structure is uniformly distributed, the problem that the resistance value is high due to the fact that the current distribution in the LED epitaxial structure is not uniform is solved, and the light emitting efficiency of the LED is improved.

(2) According to the epitaxial growth method of the light emitting diode and the light emitting diode, the ZnInGaN/MgAlN/SiInAlN superlattice layer grows on the Si-doped N-type GaN layer, the ZnInGaN/MgAlN/SiInAlN superlattice layer can induce the quantum well to form quantum dots more easily, so that the number of the quantum dots in the well is increased, the localization degree of the quantum well is higher, the electronic constraint capacity is higher, the composite probability of electrons and holes is increased, the internal quantum effect of an epitaxial wafer is increased, and the luminous efficiency of the LED is improved.

Of course, it is not necessary for any product in which the present invention is practiced to achieve all of the above-described technical effects simultaneously.

Other features of the present invention and advantages thereof will become apparent from the following detailed description of exemplary embodiments thereof, which proceeds with reference to the accompanying drawings.

Drawings

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description, serve to explain the principles of the invention.

FIG. 1 is a schematic diagram of a prior art method for fabricating an LED;

fig. 2 is a schematic structural diagram of a light emitting diode prepared by the light emitting diode epitaxial growth method in embodiment 1 of the present invention;

Detailed Description

Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that: the relative arrangement of the components and steps, the numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise.

The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses.

Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate.

In all examples shown and discussed herein, any particular value should be construed as merely illustrative, and not limiting. Thus, other examples of the exemplary embodiments may have different values.

It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, further discussion thereof is not required in subsequent figures.

Example 1

Fig. 1 is a schematic diagram of a structure of an LED prepared by a prior art method. The epitaxial growth method of the LED structure in the prior art comprises the following steps:

step 101, processing a sapphire substrate:

at 1000 ℃ and 1100 DEG CUnder the hydrogen atmosphere, introducing H of 100L/min-130L/min₂The sapphire substrate is processed for 5-10 minutes while keeping the pressure of the reaction chamber at 100-300mbar (pressure unit).

Step 102, growing a low-temperature buffer layer GaN:

cooling to 500-₃TMGa of 50-100sccm and H of 100-130L/min₂And growing a low-temperature buffer layer GaN with the thickness of 20-40nm on the sapphire substrate.

103, low-temperature buffer layer GaN corrosion treatment:

raising the temperature to 1000-₃And H of 100L/min-130L/min₂And keeping the temperature stable for 300-500 seconds to etch the low-temperature buffer layer GaN into irregular island shapes.

Step 104, growing an undoped GaN layer:

raising the temperature to 1000-₃200-400sccm TMGa and 100-130L/min H₂And continuously growing the undoped GaN layer with the thickness of 2-4 mu m.

Step 105, growing a first Si-doped N-type GaN layer:

keeping the pressure and temperature of the reaction chamber constant, and introducing NH with the flow rate of 30000-₃200-400sccm TMGa, 100-130L/min H₂And 20-50sccm SiH₄Continuously growing a first Si-doped N-type GaN layer with a thickness of 3-4 μm, wherein the Si doping concentration is 5E18atoms/cm3-1E19atoms/cm³(Note 1E19 represents the power of 19 of 10, and so on, atoms/cm³The same in units of doping concentration).

Step 106, growing a second Si-doped N-type GaN layer:

keeping the pressure and temperature of the reaction chamber constant, and introducing NH with the flow rate of 30000-₃200-400sccm TMGa, 100-130L/min H₂And SiH of 2-10sccm₄Continuously growing a second Si-doped N-type GaN layer with a thickness of 200-400nm, wherein the Si doping concentration is 5E17-1E18atoms/cm³。

Step 107, growing In_xGa_(1-x)N/GaN light-emitting layer:

keeping the pressure of the reaction chamber at 300-400mbar and the temperature at 700-750 ℃, and introducing NH with the flow rate of 50000-70000sccm₃20-40sccm of TMGa, 1500-2000sccm of TMIn and 100-130L/min of N₂In doped with In is grown to a thickness of 2.5 to 3.5nm_xGa_(1-x)An N layer (x is 0.20-0.25) with an emission wavelength of 450-455 nm;

then raising the temperature to 750 plus 850 ℃, keeping the pressure of the reaction chamber at 300 plus 400mbar and introducing NH with the flow rate of 50000 plus 70000sccm₃20-100sccm of TMGa and 100-130L/min of N₂Growing a GaN layer with the thickness of 8-15 nm;

then repeating In_xGa_(1-x)Growing N layer, repeating growth of GaN layer, and alternately growing to obtain In_xGa_(1-x)The N/GaN luminescent layer has a control cycle number of 7-15.

Step 108, growing a P-type AlGaN layer:

keeping the pressure of the reaction chamber at 200-400mbar and the temperature at 900-950 ℃, and introducing NH with the flow rate of 50000-70000sccm₃TMGa 30-60sccm, H100-130L/min₂100-TMAl of 130sccm and 1000-Cp of 1300sccm₂And Mg, continuously growing a P-type AlGaN layer with the thickness of 50-100nm, wherein the Al doping concentration is 1E20-3E20, and the Mg doping concentration is 1E19-1E 20.

Step 109, growing a magnesium-doped P-type GaN layer:

the pressure of the reaction cavity is kept at 400-900mbar and the temperature is kept at 950-1000 ℃, and the reaction is conductedNH with the inflow rate of 50000-plus-one 70000sccm₃20-100sccm of TMGa, 100-₂And 1000-Cp of 3000sccm₂And Mg, continuously growing a P-type GaN layer doped with Mg with the thickness of 50-200nm, wherein the Mg doping concentration is 1E19-1E 20.

Step 110, cooling and cooling:

finally, the temperature is reduced to 650 plus 680 ℃, the temperature is preserved for 20-30min, and then the heating system and the gas supply system are closed, and the furnace is cooled.

The structure of the LED in fig. 1 includes: a substrate sapphire substrate 201, a low temperature buffer layer GaN layer 202, an undoped GaN layer 203, an Si-doped N-type GaN layer 204, a light-emitting layer 205 (composed of In)_xGa_(1-x)N layer and GaN layer periodically grown), P-type AlGaN layer 206, Mg-doped P-type GaN layer 207, ITO layer 208, protective layer SiO₂Layer 209, P electrode 210, and N electrode 211.

When the LED prepared by the prior art works, electrons can be transmitted to the light-emitting layer from the N-type GaN layer at a higher speed, so that the longitudinally transmitted electrons are crowded, the current distribution of the light-emitting layer in the LED becomes uneven, and the light-emitting efficiency of the LED is further influenced. In order to solve the above problems in the prior art, the present embodiment provides a method for epitaxial growth of a light emitting diode, which includes:

as shown in fig. 2, an LED epitaxial structure diagram of the light emitting diode epitaxial growth method in this embodiment is shown, and the method includes the following steps:

step 301, processing the sapphire substrate.

And step 302, growing a low-temperature buffer layer GaN.

And 303, carrying out low-temperature buffer layer GaN corrosion treatment.

And step 304, growing an undoped GaN layer.

And 305, growing an N-type GaN layer doped with Si.

Step 306, growing ZnInGaN/MgAlN/SiInAlN superlattice layer: NH with the flow rate of 50000-55000sccm is introduced at the pressure of 500-750mbar in the reaction cavity and the temperature of 950-1000 DEG C₃TMGa of 50-70sccm and H of 90-110L/min₂Growing a ZnInGaN layer with the thickness of 8-15nm under the conditions of 1200-1400sccm TMIn and 900-1200sccm DMZn, wherein the In doping concentration is 3E19-4E19atom/cm³The Zn doping concentration is 1E19-1E20atom/cm³；

the SiInAlN layer in the ZnInGaN/MgAlN/SiInAlN superlattice layer has a high energy band, electrons are prevented from being spread to the light-emitting layer from the N-type GaN layer too fast by taking the high energy band of the SiInAlN layer as a potential epitaxy, the situation that the resistance value of the electrons is high due to crowding of the light-emitting layer is avoided, the distribution of current in the light-emitting layer is uniform, and the light-emitting efficiency of the LED is improved.

Step 307 of growing In_xGa_(1-x)And an N/GaN light emitting layer.

And 308, growing a P-type AlGaN layer.

Step 309, growing a magnesium-doped P-type GaN layer.

Step 310, cooling to obtain the light emitting diode:

As shown in fig. 2, which is a schematic structural diagram of a photodiode prepared by the light emitting diode epitaxial growth method according to this embodiment, the photodiode includes: a substrate sapphire substrate 401, a low temperature buffer layer GaN layer 402, an undoped GaN layer 403, a Si-doped N-type GaN layer 404, a ZnInGaN/MgAlN/SiInAlN superlattice layer 405, a light emitting layer 406 (composed of In)_xGa_(1-x)N layer and GaN layer periodically grown), P-type AlGaN layer 407, Mg-doped P-type GaN layer 408, ITO layer 409, protective layer SiO₂Layer 410, P-electrode 411, and N-electrode 412.

Example 2

The epitaxial growth method of the light emitting diode in the embodiment comprises the following steps:

step 501, processing the sapphire substrate: introducing H of 100L/min-130L/min under the hydrogen atmosphere of 1000-1100 DEG C₂And treating the sapphire substrate for 5-10 minutes under the condition that the pressure of the reaction chamber is kept at 100-300 mbar.

Step 502, growing a low-temperature buffer layer GaN: NH with the flow rate of 10000-₃TMGa of 50-100sccm and H of 100-130L/min₂Under the condition of (1), growing a low-temperature buffer layer GaN with the thickness of 20-40nm on the sapphire substrate.

Step 503, low-temperature buffer layer GaN corrosion treatment: raising the temperature to 1000-1100 ℃, keeping the pressure of the reaction chamber at 300-600mbar, and introducing NH with the flow rate of 30000-40000sccm₃And H of 100L/min-130L/min₂The temperature is kept stable for 300-.

Step 504, growing an undoped GaN layer: the temperature is 1000-1200 ℃, the pressure of the reaction cavity is 300-600mbar,NH with the flow rate of 30000-₃200-400sccm TMGa and 100-130L/min H₂Under the conditions of (1), 2 to 4 μm of undoped GaN layer is continuously grown.

Step 505, growing a Si-doped N-type GaN layer: NH with the flow rate of 30000-₃200-400sccm TMGa, 100-130L/min H₂And 20-50sccm SiH₄Under the conditions of (1) continuously growing a Si-doped N-type GaN layer with a thickness of 3-4 μm, wherein the Si doping concentration is 5E18-1E19atom/cm³。

Step 506, growing a ZnInGaN/MgAlN/SiInAlN superlattice layer:

Step 507, growing In_xGa_(1-x)N layer: NH with the flow rate of 50000-₃20-40sccm of TMGa, 1500-2000sccm of TMIn and 100-130L/min of N₂In doped with In is grown to a thickness of 2.5 to 3.5nm under the conditions of (1)_xGa_(1-x)N layer (x is 0.20-0.25), emission wavelength 450-.

Step 508, growing a GaN layer: raising the temperature to 750 plus 850 ℃, introducing NH with the flow rate of 50000 plus 70000sccm and the pressure of the reaction chamber of 300 plus 400mbar₃20-100sccm of TMGa and 100-130L/min of N₂Growing a GaN layer with a thickness of 8-15nm under the condition of (1);

step 509, growing In_xGa_(1-x)N/GaN light-emitting layer: periodically and alternately growing the In_xGa_(1-x)N layer and GaN layer to obtain In_xGa_(1-x)And an N/GaN light emitting layer, wherein the number of growth cycles is 7-15. In this example is not intended to limit_xGa_(1-x)The growth sequence of the N layer and the GaN layer can be changed by growing the GaN layer first and then growing In_xGa_(1-x)N layer, and periodically and alternately growing GaN layer and In_xGa_(1-x)N layer to obtain In_xGa_(1-x)And an N/GaN light emitting layer.

Step 510, growing a P-type AlGaN layer: NH with the flow rate of 50000-70000sccm is introduced at the reaction cavity pressure of 200-400mbar and the temperature of 900-950 DEG C₃TMGa 30-60sccm, H100-130L/min₂100-TMAl of 130sccm and 1000-Cp of 1300sccm₂Continuously growing a P-type AlGaN layer with the thickness of 50-100nm under the condition of Mg, wherein the doping concentration of Al is 1E20-3E20atom/cm³Mg doping concentration of 1E19-1E20atom/cm³。

Step 511, growing the magnesium-doped P-type GaN layer: NH with the flow rate of 50000-70000sccm is introduced at the reaction chamber pressure of 400-900mbar and the temperature of 950-1000 DEG C₃20-100sccm of TMGa, 100-₂And 1000-Cp of 3000sccm₂Continuously growing a Mg-doped P-type GaN layer with a thickness of 50-200nm under the condition of Mg, wherein the Mg doping concentration is 1E19-1E20atom/cm³。

Step 512, cooling to obtain the light emitting diode: cooling to 650 plus 680 ℃, preserving the temperature for 20-30min, then closing the heating system, closing the gas supply system, and cooling along with the furnace to obtain the light-emitting diode.

Example 3

This example provides a comparison example of the light emitting performance of the light emitting diode according to the present invention and the light emitting diode according to the conventional scheme. The comparison method of the embodiment includes the following contents:

sample 1 was prepared according to the conventional LED growth method, sample 2 was prepared according to the method described in the present invention; the parameters of the epitaxial growth method of the sample 1 and the sample 2 are different from each other in that: the preparation process of sample 2 grows a ZnInGaN/MgAlN/SiInAlN superlattice layer, and the growth conditions of other epitaxial layers of sample 1 and sample 2 are identical (refer to Table 1). Sample 1 and sample 2 were coated under the same pre-process conditions with an ITO layer of about 150nm thickness and under the same conditions with a Cr/Pt/Au electrode of about 1500nm thickness and under the same conditions with a SiO electrode of about 100nm thickness₂And (3) protecting the layer, grinding and cutting the sample into 635 μm by 635 μm (25mil by 25mil) chip particles under the same conditions, then selecting 100 crystal grains from the same positions of the sample 1 and the sample 2 respectively, and packaging the crystal grains into the white light LED under the same packaging process. The photoelectric properties of sample 1 and sample 2 were then tested using an integrating sphere at a drive current of 350 mA.

The following are a comparison table of the growth parameters of the light emitting layers of the samples 1 and 2 and a comparison table of the electrical properties of the samples 1 and 2.

TABLE 1 comparison table of growth parameters of light emitting layer

TABLE 2 comparison table of product electrical property test parameters of sample 1 and sample 2

As can be seen from tables 1 and 2: the data of the electrical property test parameters of the products of the samples 1 and 2 are analyzed and compared, the LED prepared by the LED growth method provided by the invention has high luminous efficiency, other electrical parameters of the LED become good, and experimental data prove that the feasibility of the luminous efficiency of the LED product can be improved by the method provided by the invention.

The embodiment shows that the light emitting diode epitaxial growth method and the light emitting diode of the invention achieve the following beneficial effects:

As will be appreciated by one skilled in the art, embodiments of the present invention may be provided as a method, apparatus, or computer program product. Accordingly, the present invention may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present invention may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, and the like) having computer-usable program code embodied therein.

Although some specific embodiments of the present invention have been described in detail by way of examples, it should be understood by those skilled in the art that the above examples are for illustrative purposes only and are not intended to limit the scope of the present invention. It will be appreciated by those skilled in the art that modifications may be made to the above embodiments without departing from the scope and spirit of the invention. The scope of the invention is defined by the appended claims.

Claims

1. An epitaxial growth method of a light emitting diode is characterized by sequentially comprising the following steps: processing a sapphire substrate, growing a low-temperature buffer layer GaN, growing an undoped GaN layer, growing an N-type GaN layer doped with Si, growing a ZnInGaN/MgAlN/SiInAlN superlattice layer, and growing In_xGa_(1-x)The method comprises the following steps of (1) growing an N/GaN light emitting layer, growing a P-type AlGaN layer, growing a P-type GaN layer doped with magnesium, and cooling to obtain a light emitting diode; wherein, growing ZnInGaN/MgAlN/SiInAlN superlattice layer further comprises:

the reaction cavity pressure is 500-750mbar, the temperature is 950-1000 ℃, and the reaction is carried outNH with the inflow rate of 50000-55000sccm₃TMGa of 50-70sccm and H of 90-110L/min₂Growing a ZnInGaN layer with the thickness of 8-15nm under the conditions of 1200-1400sccm TMIn and 900-1200sccm DMZn, wherein the In doping concentration is 3E19-4E19atom/cm³The Zn doping concentration is 1E19-1E20atom/cm³；

cooling down and obtaining the light emitting diode, further comprising:

2. The method of epitaxial growth of light emitting diodes according to claim 1, wherein the sapphire substrate is processed, further comprising:

3. The light emitting diode epitaxial growth method of claim 1, wherein the low temperature buffer layer GaN is grown, further comprising:

the temperature is 500-600 ℃, the pressure of the reaction cavity is 300-600mbar, and the reaction is carried outNH with the inflow rate of 10000-₃TMGa of 50-100sccm and H of 100-130L/min₂Under the condition of (1), growing a low-temperature buffer layer GaN with the thickness of 20-40nm on the sapphire substrate.

4. The method of epitaxial growth of light emitting diodes according to claim 3, further comprising:

5. The light emitting diode epitaxial growth method of claim 1, wherein growing an undoped GaN layer further comprises:

6. The epitaxial growth method of a light emitting diode according to claim 1, wherein a Si-doped N-type GaN layer is grown, further comprising:

NH with the flow rate of 30000-₃200-400sccm TMGa, 100-130L/min H₂And 20-50sccm SiH₄Under the conditions of (1) continuously growing a Si-doped N-type GaN layer with a thickness of 3-4 μm, wherein the Si doping concentration is 5E18-1E19atom/cm³。

7. The epitaxial growth method for light-emitting diode according to claim 1, wherein In is grown_xGa_(1-x)An N/GaN light emitting layer, further comprising:

the pressure in the reaction cavity is 300-400mbar, the temperature is 700-750 ℃, and NH with the flow rate of 50000-70000sccm is introduced₃20-40sccm of TMGa, 1500-2000sccm of TMIn and 100-130L/min of N₂In doped with In is grown to a thickness of 2.5 to 3.5nm under the conditions of (1)_xGa_(1-x)N layer, wherein x is 0.20-0.25, emission wavelength 450-;

8. The method of claim 1, wherein the P-type AlGaN layer is grown by:

9. The light emitting diode epitaxial growth method of claim 1, wherein the growing of the magnesium-doped P-type GaN layer further comprises:

NH with the flow rate of 50000-70000sccm is introduced at the reaction chamber pressure of 400-900mbar and the temperature of 950-1000 DEG C₃20-100sccm of TMGa, 100-₂And 1000-Cp of 3000sccm₂Continuously growing a Mg-doped P-type GaN layer with a thickness of 50-200nm under the condition of Mg, wherein the Mg doping concentration is 1E19-1E20atom/cm³。

10. A light emitting diode, its special feature isCharacterized by comprising the following components in sequence from bottom to top: sapphire substrate, low-temperature buffer layer GaN, undoped GaN layer, Si-doped N-type GaN layer, ZnInGaN/MgAlN/SiInAlN superlattice layer, In_xGa_(1-x)The GaN/GaN light-emitting layer comprises an N/GaN light-emitting layer, a P-type AlGaN layer and a P-type GaN layer doped with magnesium; the ZnInGaN/MgAlN/SiInAlN superlattice layer is prepared by the following steps: