CN106887485B - A kind of LED epitaxial growing method and light emitting diode - Google Patents
A kind of LED epitaxial growing method and light emitting diode Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 42
- 239000011777 magnesium Substances 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 21
- 239000010980 sapphire Substances 0.000 claims abstract description 21
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 17
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 14
- 238000001816 cooling Methods 0.000 claims abstract description 13
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
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Abstract
The present invention discloses a kind of LED epitaxial growing method, comprising: processing Sapphire Substrate, growing low temperature buffer layer GaN, grows the GaN layer that undopes, the N-type GaN layer of growth doping Si, growth ZnInGaN/MgAlN/SiInAlN superlattice layer, growth InxGa(1‑x)N/GaN luminescent layer, growing P-type AlGaN layer, growth mix p-type GaN layer, the cooling down of magnesium and obtain light emitting diode.The present invention improves the luminous efficiency of LED.
Description
Technical field
The present invention relates to the technical fields of light emitting diode, more particularly, to a kind of LED epitaxial growth side
Method and light emitting diode.
Background technique
Light emitting diode (Light Emitting Diode, abbreviation LED) is a kind of solid state lighting device, because of its volume
It is small, power consumption is low, long service life, brightness are high, environmental protection, it is sturdy and durable the advantages that approved by the majority of consumers.Currently, domestic
The scale of production LED is also gradually expanding, as the improvement of people's living standards, in the market to promoting LED luminance and light efficiency
Demand is growing day by day, and user's extensive concern is desirable to obtain that more power saving, brightness is higher, the better LED of light efficiency, this is just to LED
Production more stringent requirements are proposed；The better LED of luminous efficiency how is grown to be paid more and more attention.
And important component of the LED epitaxial layer as LED, it plays an important role to LED luminous efficiency, because
The raising of epitaxial layer crystal quality can make the property of LED component can be promoted, and then promote the luminous efficiency of LED, longevity
Life, ageing resistance, antistatic effect, stability.
Traditional LED structure includes following epitaxial structure: substrate Sapphire Substrate, undopes at low temperature buffer layer GaN layer
GaN layer, the N-type GaN layer for adulterating Si, luminescent layer are (by InxGa(1-x)N layers and GaN layer cyclical growth obtain), p-type AlGaN layer,
Mix the p-type GaN layer, ITO layer, protective layer SiO of Mg2Layer, P electrode and N electrode.
Traditional LED cannot stop electronics to pass in the N-type GaN layer for the doping Si that Sapphire Substrate epitaxial growth obtains
Defeated speed causes electronics crowded after the electron-transport to luminescent layer of excessive velocities, so that current distribution is uneven is even, causes
The resistance value of N-type GaN layer is got higher, and then electric current in LED is caused to fall in the luminescent layer internal consumption of LED and LED luminous efficiency occur
The problem of reduction.
Therefore it provides a kind of improvement LED epitaxial structure and to promote the scheme of LED luminous efficiency be that this field is urgently to be resolved
Problem.
Summary of the invention
In view of this, being solved existing the present invention provides a kind of LED epitaxial growing method and light emitting diode
There is the technical issues of even caused luminous efficiency of current distribution is uneven reduces in LED epitaxial structure in technology.
In order to solve the above-mentioned technical problem, the present invention proposes a kind of LED epitaxial growing method, comprising: processing is blue
Jewel substrate, growing low temperature buffer layer GaN, the GaN layer that undopes, the N-type GaN layer of growth doping Si, growth ZnInGaN/ are grown
MgAlN/SiInAlN superlattice layer, growth InxGa(1-x)N/GaN luminescent layer, grows the p-type GaN for mixing magnesium at growing P-type AlGaN layer
Layer, cooling down obtain light emitting diode；Wherein,
ZnInGaN/MgAlN/SiInAlN superlattice layer is grown, further comprises:
Reaction cavity pressure is 500-750mbar, temperature is 950-1000 DEG C, is passed through flow is 50000-55000sccm
NH3, 50-70sccm TMGa, 90-110L/min H2, 1200-1400sccm TMIn and 900-1200sccm DMZn
Under conditions of, grow the ZnInGaN layer of 8-15nm, wherein In doping concentration is 3E19-4E19atom/cm3, Zn doping concentration
For 1E19-1E20atom/cm3；
It maintains reaction chamber pressure and temperature constant, is passed through the NH that flow is 50000-55000sccm3, 100-200sccm
The H of TMAl, 90-110L/min2And the Cp of 900-1000sccm2Under conditions of Mg, the MgAlN layer of 4-7nm is grown, wherein Mg mixes
Miscellaneous concentration is 1E19-1E20atom/cm3；
It maintains reaction chamber pressure and temperature constant, is passed through the NH that flow is 50000-55000sccm3, 90-110L/min
H2, 300-600sccm TMAl, 1800-2500sccm TMIn and 20-30sccm SiH4Under conditions of, growth thickness 8-
The SiInAlN layer of 15nm, wherein Si doping concentration is 1E18-5E18atom/cm3；
ZnInGaN layers, MgAlN layers and SiInAlN layers of cyclical growth obtain ZnInGaN/MgAlN/SiInAlN superlattices
Layer, wherein growth cycle 5-15；
Cooling down obtains light emitting diode, further comprises:
20-30min is kept the temperature after being cooled to 650-680 DEG C, is then switched off heating system, closing is obtained to gas system furnace cooling
To light emitting diode.
Further, wherein processing Sapphire Substrate are as follows:
Under 1000-1100 DEG C of hydrogen atmosphere, it is passed through the H of 100L/min-130L/min2, keep reaction cavity pressure be
Under conditions of 100-300mbar, handle Sapphire Substrate 5-10 minutes.
Further, wherein growing low temperature buffer layer GaN are as follows:
Temperature is 500-600 DEG C, reaction cavity pressure is 300-600mbar, is passed through flow is 10000-20000sccm's
NH3, 50-100sccm TMGa and 100L/min-130L/min H2Under conditions of, growth thickness is on a sapphire substrate
The low temperature buffer layer GaN of 20-40nm.
Further, wherein this method further include:
Temperature is increased to 1000-1100 DEG C, keeping reaction cavity pressure is 300-600mbar, and being passed through flow is 30000-
The NH of 40000sccm3And the H of 100L/min-130L/min2Under conditions of, keeping temperature to stablize lasting 300-500 seconds will be described
Low temperature buffer layer GaN corrodes into irregular island.
Further, wherein grow the GaN layer that undopes are as follows:
Temperature is 1000-1200 DEG C, reaction cavity pressure is 300-600mbar, is passed through flow is 30000-40000sccm
NH3, 200-400sccm TMGa and 100-130L/min H2Under conditions of, continued propagation undopes with a thickness of 2-4 μm
GaN layer.
Further, wherein the N-type GaN layer of growth doping Si are as follows:
Reaction cavity pressure is 300-600mbar, temperature is 1000-1200 DEG C, is passed through flow is 30000-60000sccm
NH3, 200-400sccm TMGa, 100-130L/min H2And the SiH of 20-50sccm4Under conditions of, continued propagation thickness
For the N-type GaN layer of 3-4 μm of doping Si, wherein Si doping concentration is 5E18-1E19atom/cm3。
Further, wherein growth InxGa(1-x)N/GaN luminescent layer are as follows:
Reaction cavity pressure is 300-400mbar, temperature is 700-750 DEG C, is passed through flow is 50000-70000sccm's
NH3, 20-40sccm TMGa, 1500-2000sccm TMIn and 100-130L/min N2Under conditions of, growth thickness is
2.5-3.5nm doping In InxGa(1-x)N layers (x=0.20-0.25), emission wavelength 450-455nm；
Temperature is increased to 750-850 DEG C, reaction cavity pressure is 300-400mbar, to be passed through flow be 50000-
The NH of 70000sccm3, 20-100sccm TMGa and 100-130L/min N2Under conditions of, growth thickness is 8-15nm's
GaN layer；
In described in periodical alternating growthxGa(1-x)N layers obtain In with GaN layerxGa(1-x)N/GaN luminescent layer, wherein growth
Periodicity is 7-15.
Further, wherein growing P-type AlGaN layer are as follows:
Reaction cavity pressure is 200-400mbar, temperature is 900-950 DEG C, is passed through flow is 50000-70000sccm's
NH3, 30-60sccm TMGa, 100-130L/min H2, 100-130sccm TMAl and 1000-1300sccm Cp2Mg's
Under the conditions of, continued propagation with a thickness of 50-100nm p-type AlGaN layer, wherein Al doping concentration be 1E20-3E20atom/cm3,
Mg doping concentration 1E19-1E20atom/cm3。
Further, wherein the p-type GaN layer of magnesium is mixed in growth are as follows:
Reaction cavity pressure is 400-900mbar, temperature is 950-1000 DEG C, is passed through flow is 50000-70000sccm
NH3, 20-100sccm TMGa, 100-130L/min H2And the Cp of 1000-3000sccm2Under conditions of Mg, continued propagation
With a thickness of the p-type GaN layer for mixing magnesium of 50-200nm, wherein Mg doping concentration is 1E19-1E20atom/cm3。
On the other hand, the present invention also provides a kind of light emitting diodes, from the bottom to top successively include: Sapphire Substrate, low temperature
Buffer layer GaN, the GaN layer that undopes, the N-type GaN layer for adulterating Si, ZnInGaN/MgAlN/SiInAlN superlattice layer, InxGa(1-x)
N/GaN luminescent layer, p-type AlGaN layer and the p-type GaN layer for mixing magnesium；Wherein, the ZnInGaN/MgAlN/SiInAlN superlattice layer
It is made by following steps:
Reaction cavity pressure is 500-750mbar, temperature is 950-1000 DEG C, is passed through flow is 50000-55000sccm
NH3, 50-70sccm TMGa, 90-110L/min H2, 1200-1400sccm TMIn and 900-1200sccm DMZn
Under conditions of, grow the ZnInGaN layer of 8-15nm, wherein In doping concentration is 3E19-4E19atom/cm3, Zn doping concentration
For 1E19-1E20atom/cm3；
It maintains reaction chamber pressure and temperature constant, is passed through the NH that flow is 50000-55000sccm3, 100-200sccm
The H of TMAl, 90-110L/min2And the Cp of 900-1000sccm2Under conditions of Mg, the MgAlN layer of 4-7nm is grown, wherein Mg mixes
Miscellaneous concentration is 1E19-1E20atom/cm3；
It maintains reaction chamber pressure and temperature constant, is passed through the NH that flow is 50000-55000sccm3, 90-110L/min
H2, 300-600sccm TMAl, 1800-2500sccm TMIn and 20-30sccm SiH4Under conditions of, growth thickness 8-
The SiInAlN layer of 15nm, wherein Si doping concentration is 1E18-5E18atom/cm3；
ZnInGaN layers, MgAlN layers and SiInAlN layers of cyclical growth obtain ZnInGaN/MgAlN/SiInAlN superlattices
Layer, wherein growth cycle 5-15.
Compared with prior art, LED epitaxial growing method of the invention and light emitting diode, realize as follows
The utility model has the advantages that
(1) LED epitaxial growing method of the present invention and light emitting diode, in the N-type GaN layer of doping Si
Upper growth ZnInGaN/MgAlN/SiInAlN superlattice layer is prevented using SiInAlN layers of high energy bands as gesture blocking electronics of heap of stone
Only the too fast N-type GaN layer by adulterating Si of electronics travels to luminescent layer, so that the crowded electronics of longitudinal propagation encounters SiInAlN layers
When, the high energy band by SiInAlN stop and suitably horizontal proliferation come so that balanced current distribution in LED epitaxial structure,
The problem of getting higher so as to avoid the even caused resistance value of current distribution is uneven in LED epitaxial structure, improves the luminous effect of LED
Rate.
(2) LED epitaxial growing method of the present invention and light emitting diode, in the N-type GaN layer of doping Si
Upper growth ZnInGaN/MgAlN/SiInAlN superlattice layer, the ZnInGaN/MgAlN/SiInAlN superlattice layer can induce quantum
Trap is more easier to form quantum dot, so that the quantity of quantum dot increases inside trap, Quantum Well localization degree is stronger, to electron beam
It ties up that ability is stronger, increases the probability of recombination of electrons and holes, increase the internal quantum efficiency of epitaxial wafer, improve LED's
Luminous efficiency.
Certainly, implementing any of the products of the present invention specific needs while must not reach all the above technical effect.
By referring to the drawings to the detailed description of exemplary embodiment of the present invention, other feature of the invention and its
Advantage will become apparent.
Detailed description of the invention
It is combined in the description and the attached drawing for constituting part of specification shows the embodiment of the present invention, and even
With its explanation together principle for explaining the present invention.
Fig. 1 is the structural schematic diagram that LED is prepared in art methods；
Fig. 2 is the light emitting diode that LED epitaxial growing method described in the embodiment of the present invention 1 is prepared
Structural schematic diagram；
Specific embodiment
Carry out the various exemplary embodiments of detailed description of the present invention now with reference to attached drawing.It should also be noted that unless in addition having
Body explanation, the unlimited system of component and the positioned opposite of step, numerical expression and the numerical value otherwise illustrated in these embodiments is originally
The range of invention.
Be to the description only actually of at least one exemplary embodiment below it is illustrative, never as to the present invention
And its application or any restrictions used.
Technology, method and apparatus known to person of ordinary skill in the relevant may be not discussed in detail, but suitable
In the case of, the technology, method and apparatus should be considered as part of specification.
It is shown here and discuss all examples in, any occurrence should be construed as merely illustratively, without
It is as limitation.Therefore, other examples of exemplary embodiment can have different values.
It should also be noted that similar label and letter indicate similar terms in following attached drawing, therefore, once a certain Xiang Yi
It is defined in a attached drawing, then in subsequent attached drawing does not need that it is further discussed.
Embodiment 1
As shown in Figure 1, the structural schematic diagram of LED is prepared for art methods.LED structure extension in the prior art
Growing method includes the following steps:
Step 101, processing Sapphire Substrate:
Under 1000-1100 DEG C of hydrogen atmosphere, it is passed through the H of 100L/min-130L/min2, keep reaction cavity pressure be
100-300mbar (barometric millimeter of mercury) is handled Sapphire Substrate 5-10 minutes.
Step 102, growing low temperature buffer layer GaN:
It is cooled at 500-600 DEG C, keeps reaction cavity pressure 300-600mbar, being passed through flow is 10000-20000sccm
The NH of (sccm remarks standard milliliters are per minute)3, 50-100sccm TMGa and 100L/min-130L/min H2, in sapphire
Growth thickness is the low temperature buffer layer GaN of 20-40nm on substrate.
Step 103, low temperature buffer layer GaN corrosion treatment:
Temperature is increased to 1000-1100 DEG C, keeps reaction cavity pressure 300-600mbar, being passed through flow is 30000-
The NH of 40000sccm3And the H of 100L/min-130L/min2, keep temperature to stablize and continue 300-500 seconds for low temperature buffer layer GaN
Corrode into irregular island.
The GaN layer that step 104, growth undope:
1000-1200 DEG C is increased the temperature to, reaction cavity pressure 300-600mbar is kept, being passed through flow is 30000-
The NH of 40000sccm (sccm remarks standard milliliters are per minute)3, 200-400sccm TMGa and 100-130L/min H2, hold
The GaN layer that undopes that continuous growth thickness is 2-4 μm.
Step 105, growth regulation one adulterate the N-type GaN layer of Si:
Reaction cavity pressure, temperature-resistant is kept, being passed through flow is that (sccm remarks standard milliliters are every by 30000-60000sccm
Minute) NH3, 200-400sccm TMGa, 100-130L/min H2And the SiH of 20-50sccm4, continued propagation with a thickness of
The N-type GaN layer of 3-4 μm first doping Si, wherein Si doping concentration 5E18atoms/cm3-1E19atoms/cm3(remarks 1E19
10 19 powers are represented, and so on, atoms/cm3Doping concentration unit is similarly hereinafter).
Step 106, growth regulation two adulterate the N-type GaN layer of Si:
Reaction cavity pressure, temperature-resistant is kept, being passed through flow is that (sccm remarks standard milliliters are every by 30000-60000sccm
Minute) NH3, 200-400sccm TMGa, 100-130L/min H2And the SiH of 2-10sccm4, continued propagation with a thickness of
The N-type GaN layer of the second doping Si of 200-400nm, wherein Si doping concentration is 5E17-1E18atoms/cm3。
Step 107, growth InxGa(1-x)N/GaN luminescent layer:
Holding reaction cavity pressure is 300-400mbar, temperature is 700-750 DEG C, and being passed through flow is 50000-70000sccm
NH3, 20-40sccm TMGa, 1500-2000sccm TMIn and 100-130L/min N2, growth thickness 2.5-
The In of the doping In of 3.5nmxGa(1-x)N layers (x=0.20-0.25), emission wavelength 450-455nm；
Then temperature is increased to 750-850 DEG C, and keeping reaction cavity pressure 300-400mbar to be passed through flow is 50000-
The NH of 70000sccm3, 20-100sccm TMGa and 100-130L/min N2, growth thickness is the GaN layer of 8-15nm；
Then In is repeatedxGa(1-x)N layers of growth, then repeatedly the growth of GaN layer, alternating growth obtain InxGa(1-x)N/
GaN luminescent layer, control periodicity are 7-15.
Step 108, growing P-type AlGaN layer:
Holding reaction cavity pressure is 200-400mbar, temperature is 900-950 DEG C, and being passed through flow is 50000-70000sccm
NH3, 30-60sccm TMGa, 100-130L/min H2, 100-130sccm TMAl and 1000-1300sccm
Cp2Mg, continued propagation with a thickness of 50-100nm p-type AlGaN layer, wherein Al doping concentration 1E20-3E20, Mg doping concentration
1E19-1E20。
Step 109, growth mix the p-type GaN layer of magnesium:
Holding reaction cavity pressure is 400-900mbar, temperature is 950-1000 DEG C, and being passed through flow is 50000-
The NH of 70000sccm3, 20-100sccm TMGa, 100-130L/min H2And the Cp of 1000-3000sccm2Mg is lasting raw
The long p-type GaN layer for mixing magnesium with a thickness of 50-200nm, wherein Mg doping concentration 1E19-1E20.
Step 110, cooling, cooling:
It is finally cooled to 650-680 DEG C, keeps the temperature 20-30min, heating system is then switched off, closes and give gas system, it is cold with furnace
But.
The structure of LED includes: substrate Sapphire Substrate 201, low temperature buffer layer GaN layer 202, the GaN layer to undope in Fig. 1
203, the N-type GaN layer 204 of doping Si, luminescent layer 205 are (by InxGa(1-x)N layers and GaN layer cyclical growth obtain), p-type
AlGaN layer 206, the p-type GaN layer 207 for mixing Mg, ITO layer 208, protective layer SiO2Layer 209, P electrode 210 and N electrode 211.
At work, electronics can be propagated with faster speed by N-type GaN layer the LED obtained by prior art preparation
To luminescent layer, the electronics of longitudinal propagation is caused crowded situation occur, the distribution of luminescent layer electric current in LED is caused to become uneven
It is even, and then influence the luminous efficiency of LED.In order to solve the above problem in the prior art, the present embodiment provides a kind of as follows
LED epitaxial growing method:
As shown in Fig. 2, for the LED epitaxial structure figure of LED epitaxial growing method described in this implementation, this method
Include the following steps:
Step 301, processing Sapphire Substrate.
Step 302, growing low temperature buffer layer GaN.
Step 303, low temperature buffer layer GaN corrosion treatment.
Step 304 grows the GaN layer that undopes.
The N-type GaN layer of step 305, growth doping Si.
Step 306, growth ZnInGaN/MgAlN/SiInAlN superlattice layer: reaction cavity pressure be 500-750mbar,
The NH that it is 50000-55000sccm that temperature, which is 950-1000 DEG C, is passed through flow3, 50-70sccm TMGa, 90-110L/min
H2, 1200-1400sccm TMIn and 900-1200sccm DMZn under conditions of, grow the ZnInGaN layer of 8-15nm,
In, In doping concentration is 3E19-4E19atom/cm3, Zn doping concentration is 1E19-1E20atom/cm3；
It maintains reaction chamber pressure and temperature constant, is passed through the NH that flow is 50000-55000sccm3, 100-200sccm
The H of TMAl, 90-110L/min2And the Cp of 900-1000sccm2Under conditions of Mg, the MgAlN layer of 4-7nm is grown, wherein Mg mixes
Miscellaneous concentration is 1E19-1E20atom/cm3；
It maintains reaction chamber pressure and temperature constant, is passed through the NH that flow is 50000-55000sccm3, 90-110L/min
H2, 300-600sccm TMAl, 1800-2500sccm TMIn and 20-30sccm SiH4Under conditions of, growth thickness 8-
The SiInAlN layer of 15nm, wherein Si doping concentration is 1E18-5E18atom/cm3；
ZnInGaN layers, MgAlN layers and SiInAlN layers of cyclical growth obtain ZnInGaN/MgAlN/SiInAlN superlattices
Layer, wherein growth cycle 5-15；
SiInAlN layer in ZnInGaN/MgAlN/SiInAlN superlattice layer has high energy band, passes through SiInAlN layers
High energy band stops that electronics is too fast to travel to luminescent layer by N-type GaN layer as gesture is of heap of stone, and avoiding electronics causes to hinder luminescent layer is crowded
The case where value is got higher so that the distribution of electric current becomes uniformly in luminescent layer, and then improves the luminous efficiency of LED.
Step 307, growth InxGa(1-x)N/GaN luminescent layer.
Step 308, growing P-type AlGaN layer.
Step 309, growth mix the p-type GaN layer of magnesium.
Step 310, cooling down obtain light emitting diode:
20-30min is kept the temperature after being cooled to 650-680 DEG C, is then switched off heating system, closing is obtained to gas system furnace cooling
To light emitting diode.
As shown in Fig. 2, the knot for the optical diode being prepared for LED epitaxial growing method described in the present embodiment
Structure schematic diagram, the optical diode include: substrate Sapphire Substrate 401, low temperature buffer layer GaN layer 402, the GaN layer to undope
403, the N-type GaN layer 404 of doping Si, ZnInGaN/MgAlN/SiInAlN superlattice layer 405, luminescent layer 406 are (by InxGa(1-x)
N layers and GaN layer cyclical growth obtain), p-type AlGaN layer 407, the p-type GaN layer 408 for mixing Mg, ITO layer 409, protective layer SiO2
Layer 410, P electrode 411 and N electrode 412.
Embodiment 2
LED epitaxial growing method described in the present embodiment includes the following steps:
Step 501, processing Sapphire Substrate: under 1000-1100 DEG C of hydrogen atmosphere, it is passed through 100L/min-130L/
The H of min2, reaction cavity pressure is kept to handle Sapphire Substrate 5-10 minutes under conditions of 100-300mbar.
Step 502, growing low temperature buffer layer GaN: temperature be 500-600 DEG C, reaction cavity pressure be 300-600mbar,
It is passed through the NH that flow is 10000-20000sccm3, 50-100sccm TMGa and 100L/min-130L/min H2Condition
Under, growth thickness is the low temperature buffer layer GaN of 20-40nm on a sapphire substrate.
Step 503, low temperature buffer layer GaN corrosion treatment: temperature is increased to 1000-1100 DEG C, holding reaction cavity pressure is
300-600mbar is passed through the NH that flow is 30000-40000sccm3And the H of 100L/min-130L/min2Under conditions of, it keeps
Temperature, which is stablized, to be continued to corrode the low temperature buffer layer GaN at irregular island in 300-500 seconds.
Step 504, growth undope GaN layer: temperature be 1000-1200 DEG C, reaction cavity pressure be 300-600mbar,
It is passed through the NH that flow is 30000-40000sccm3, 200-400sccm TMGa and 100-130L/min H2Under conditions of, it holds
The GaN layer that undopes of continuous 2-4 μm of growth.
Step 505, growth doping Si N-type GaN layer: reaction cavity pressure be 300-600mbar, temperature 1000-
1200 DEG C, be passed through flow be 30000-60000sccm NH3, 200-400sccm TMGa, 100-130L/min H2And 20-
The SiH of 50sccm4Under conditions of, continued propagation with a thickness of 3-4 μm of doping Si N-type GaN layer, wherein Si doping concentration is
5E18-1E19atom/cm3。
Step 506, growth ZnInGaN/MgAlN/SiInAlN superlattice layer:
Reaction cavity pressure is 500-750mbar, temperature is 950-1000 DEG C, is passed through flow is 50000-55000sccm
NH3, 50-70sccm TMGa, 90-110L/min H2, 1200-1400sccm TMIn and 900-1200sccm DMZn
Under conditions of, grow the ZnInGaN layer of 8-15nm, wherein In doping concentration is 3E19-4E19atom/cm3, Zn doping concentration
For 1E19-1E20atom/cm3；
It maintains reaction chamber pressure and temperature constant, is passed through the NH that flow is 50000-55000sccm3, 100-200sccm
The H of TMAl, 90-110L/min2And the Cp of 900-1000sccm2Under conditions of Mg, the MgAlN layer of 4-7nm is grown, wherein Mg mixes
Miscellaneous concentration is 1E19-1E20atom/cm3；
It maintains reaction chamber pressure and temperature constant, is passed through the NH that flow is 50000-55000sccm3, 90-110L/min
H2, 300-600sccm TMAl, 1800-2500sccm TMIn and 20-30sccm SiH4Under conditions of, growth thickness 8-
The SiInAlN layer of 15nm, wherein Si doping concentration is 1E18-5E18atom/cm3；
ZnInGaN layers, MgAlN layers and SiInAlN layers of cyclical growth obtain ZnInGaN/MgAlN/SiInAlN superlattices
Layer, wherein growth cycle 5-15.
SiInAlN layer in ZnInGaN/MgAlN/SiInAlN superlattice layer has high energy band, passes through SiInAlN layers
High energy band stops that electronics is too fast to travel to luminescent layer by N-type GaN layer as gesture is of heap of stone, and avoiding electronics causes to hinder luminescent layer is crowded
The case where value is got higher so that the distribution of electric current becomes uniformly in luminescent layer, and then improves the luminous efficiency of LED.
Step 507, growth InxGa(1-x)N layers: reaction cavity pressure is 300-400mbar, temperature is 700-750 DEG C, logical
Inbound traffics are the NH of 50000-70000sccm3, 20-40sccm TMGa, 1500-2000sccm TMIn and 100-130L/
The N of min2Under conditions of, the In for the doping In that growth thickness is 2.5-3.5nmxGa(1-x)N layers (x=0.20-0.25), shine wave
Long 450-455nm.
Step 508, growth GaN layer: temperature is increased to 750-850 DEG C, is 300-400mbar, is passed through in reaction cavity pressure
Flow is the NH of 50000-70000sccm3, 20-100sccm TMGa and 100-130L/min N2Under conditions of, growth thickness
For the GaN layer of 8-15nm；
Step 509, growth InxGa(1-x)N/GaN luminescent layer: In described in periodical alternating growthxGa(1-x)N layers and GaN layer
Obtain InxGa(1-x)N/GaN luminescent layer, wherein growth cycle number is 7-15.The present embodiment does not limit InxGa(1-x)N layers and
The successive succession of GaN layer can also first grow GaN layer, regrowth InxGa(1-x)N layers, then periodical alternating growth GaN layer
And InxGa(1-x)N layers obtain InxGa(1-x)N/GaN luminescent layer.
Step 510, growing P-type AlGaN layer: reaction cavity pressure be 200-400mbar, temperature is 900-950 DEG C, is passed through
Flow is the NH of 50000-70000sccm3, 30-60sccm TMGa, 100-130L/min H2, 100-130sccm TMAl
And the Cp of 1000-1300sccm2Under conditions of Mg, continued propagation with a thickness of 50-100nm p-type AlGaN layer, wherein Al doping
Concentration is 1E20-3E20atom/cm3, Mg doping concentration 1E19-1E20atom/cm3。
The p-type GaN layer of magnesium is mixed in step 511, growth: reaction cavity pressure be 400-900mbar, temperature 950-1000
DEG C, be passed through flow be 50000-70000sccm NH3, 20-100sccm TMGa, 100-130L/min H2And 1000-
The Cp of 3000sccm2Under conditions of Mg, continued propagation with a thickness of 50-200nm the p-type GaN layer for mixing magnesium, wherein Mg doping it is dense
Degree is 1E19-1E20atom/cm3。
Step 512, cooling down obtain light emitting diode: keeping the temperature 20-30min after being cooled to 650-680 DEG C, be then switched off
Heating system, closing obtain light emitting diode to gas system furnace cooling.
Embodiment 3
The present embodiment provides the photisms of the light emitting diode of the present invention program a kind of and the light emitting diode of traditional scheme
It can comparative example.The control methods of the present embodiment includes following content:
Sample 1 is prepared according to the growing method of traditional LED, the method described according to the present invention prepares sample 2；Sample 1
Be with 2 epitaxial growth method parameter difference of sample: the preparation process of sample 2 grown ZnInGaN/MgAlN/SiInAlN
Other outer layer growth conditions of superlattice layer, sample 1 and sample 2 are just the same (please referring to table 1).Sample 1 and sample 2 are existed
The ITO layer that thickness is about 150nm is plated under identical preceding process conditions, and plating thickness is about 1500nm's under the same conditions
Cr/Pt/Au electrode plates the SiO that thickness is about 100nm under the same conditions2Protective layer, then under the same conditions by sample
Grinding and cutting is at 635 μm * 635 μm (25mil*25mil) of chip particle, and then sample 1 and sample 2 are respectively chosen in same position
100 crystal grain are selected to be packaged into white light LEDs under identical packaging technology.Then using integrating sphere in driving current 350mA item
The photoelectric properties of test sample 1 and sample 2 under part.
It the following is the test ginseng of 2 electrical property of contrast table and sample 1 and sample of the light emitting layer grown parameter of sample 1 and sample 2
Number contrast table.
The contrast table of table 1, light emitting layer grown parameter
2 product electrical testing parameter comparison table of table 2, sample 1 and sample
As can be seen from Table 1 and Table 2: the data of 2 product electrical testing parameter of sample 1 and sample are subjected to analysis pair
Than the LED light effect that LED growing method provided by the invention is prepared is higher, all other LED electrical parameters also improve, real
The feasibility of LED product light efficiency can be promoted by testing data and demonstrating the method for the present invention.
Through the foregoing embodiment it is found that LED epitaxial growing method of the invention and light emitting diode, reach
It is following the utility model has the advantages that
(1) LED epitaxial growing method of the present invention and light emitting diode, in the N-type GaN layer of doping Si
Upper growth ZnInGaN/MgAlN/SiInAlN superlattice layer is prevented using SiInAlN layers of high energy bands as gesture blocking electronics of heap of stone
Only the too fast N-type GaN layer by adulterating Si of electronics travels to luminescent layer, so that the crowded electronics of longitudinal propagation encounters SiInAlN layers
When, the high energy band by SiInAlN stop and suitably horizontal proliferation come so that balanced current distribution in LED epitaxial structure,
The problem of getting higher so as to avoid the even caused resistance value of current distribution is uneven in LED epitaxial structure, improves the luminous effect of LED
Rate.
(2) LED epitaxial growing method of the present invention and light emitting diode, in the N-type GaN layer of doping Si
Upper growth ZnInGaN/MgAlN/SiInAlN superlattice layer, the ZnInGaN/MgAlN/SiInAlN superlattice layer can induce quantum
Trap is more easier to form quantum dot, so that the quantity of quantum dot increases inside trap, Quantum Well localization degree is stronger, to electron beam
It ties up that ability is stronger, increases the probability of recombination of electrons and holes, increase the internal quantum efficiency of epitaxial wafer, improve LED's
Luminous efficiency.
It should be understood by those skilled in the art that, the embodiment of the present invention can provide as method, apparatus or computer program
Product.Therefore, complete hardware embodiment, complete software embodiment or reality combining software and hardware aspects can be used in the present invention
Apply the form of example.Moreover, it wherein includes the computer of computer usable program code that the present invention, which can be used in one or more,
The computer program implemented in usable storage medium (including but not limited to magnetic disk storage, CD-ROM, optical memory etc.) produces
The form of product.
Although some specific embodiments of the invention are described in detail by example, the skill of this field
Art personnel it should be understood that example above merely to being illustrated, the range being not intended to be limiting of the invention.The skill of this field
Art personnel are it should be understood that can without departing from the scope and spirit of the present invention modify to above embodiments.This hair
Bright range is defined by the following claims.
Claims (10)
1. a kind of LED epitaxial growing method, which is characterized in that successively comprising steps of processing Sapphire Substrate, growth
Low temperature buffer layer GaN, the GaN layer that undopes, the N-type GaN layer of growth doping Si, growth ZnInGaN/MgAlN/SiInAlN are grown
Superlattice layer, growth InxGa(1-x)N/GaN luminescent layer, growing P-type AlGaN layer, growth are mixed p-type GaN layer, the cooling down of magnesium and are obtained
To light emitting diode；Wherein, ZnInGaN/MgAlN/SiInAlN superlattice layer is grown, further comprises:
Reaction cavity pressure be 500-750mbar, the NH that it is 50000-55000sccm that temperature, which is 950-1000 DEG C, is passed through flow3、
The H of TMGa, 90-110L/min of 50-70sccm2, 1200-1400sccm TMIn and 900-1200sccm DMZn condition
Under, grow the ZnInGaN layer of 8-15nm, wherein In doping concentration is 3E19-4E19atom/cm3, Zn doping concentration is 1E19-
1E20atom/cm3；
It maintains reaction chamber pressure and temperature constant, is passed through the NH that flow is 50000-55000sccm3, 100-200sccm TMAl,
The H of 90-110L/min2And the Cp of 900-1000sccm2Under conditions of Mg, the MgAlN layer of 4-7nm is grown, wherein Mg doping is dense
Degree is 1E19-1E20atom/cm3；
It maintains reaction chamber pressure and temperature constant, is passed through the NH that flow is 50000-55000sccm3, 90-110L/min H2、
The SiH of the TMIn and 20-30sccm of TMAl, 1800-2500sccm of 300-600sccm4Under conditions of, growth thickness 8-
The SiInAlN layer of 15nm, wherein Si doping concentration is 1E18-5E18atom/cm3；
ZnInGaN layers, MgAlN layers and SiInAlN layers of cyclical growth obtain ZnInGaN/MgAlN/SiInAlN superlattice layer,
Wherein, growth cycle 5-15；
Cooling down obtains light emitting diode, further comprises:
20-30min is kept the temperature after being cooled to 650-680 DEG C, is then switched off heating system, is closed and sent out to gas system furnace cooling
Optical diode.
2. LED epitaxial growing method according to claim 1, which is characterized in that processing Sapphire Substrate, into
One step are as follows:
Under 1000-1100 DEG C of hydrogen atmosphere, it is passed through the H of 100L/min-130L/min2, keeping reaction cavity pressure is 100-
Under conditions of 300mbar, handle Sapphire Substrate 5-10 minutes.
3. LED epitaxial growing method according to claim 1, which is characterized in that growing low temperature buffer layer GaN,
Further are as follows:
In the NH that temperature is 500-600 DEG C, it is 10000-20000sccm that reaction cavity pressure, which is 300-600mbar, is passed through flow3、
The H of the TMGa and 100L/min-130L/min of 50-100sccm2Under conditions of, growth thickness is 20- on a sapphire substrate
The low temperature buffer layer GaN of 40nm.
4. LED epitaxial growing method according to claim 3, which is characterized in that further comprise:
Temperature is increased to 1000-1100 DEG C, keeping reaction cavity pressure is 300-600mbar, and being passed through flow is 30000-
The NH of 40000sccm3And the H of 100L/min-130L/min2Under conditions of, keeping temperature to stablize lasting 300-500 seconds will be described
Low temperature buffer layer GaN corrodes into irregular island.
5. LED epitaxial growing method according to claim 1, which is characterized in that the GaN layer that undopes is grown, into
One step are as follows:
Temperature is 1000-1200 DEG C, reaction cavity pressure is 300-600mbar, is passed through flow is 30000-40000sccm's
NH3, 200-400sccm TMGa and 100-130L/min H2Under conditions of, continued propagation is with a thickness of 2-4 μm of the GaN that undopes
Layer.
6. LED epitaxial growing method according to claim 1, which is characterized in that the N-type GaN of growth doping Si
Layer, further are as follows:
Reaction cavity pressure is 300-600mbar, temperature is 1000-1200 DEG C, is passed through flow is 30000-60000sccm's
NH3, 200-400sccm TMGa, 100-130L/min H2And the SiH of 20-50sccm4Under conditions of, continued propagation with a thickness of
The N-type GaN layer of 3-4 μm of doping Si, wherein Si doping concentration is 5E18-1E19atom/cm3。
7. LED epitaxial growing method according to claim 1, which is characterized in that growth InxGa(1-x)N/GaN
Luminescent layer, further are as follows:
Reaction cavity pressure be 300-400mbar, the NH that it is 50000-70000sccm that temperature, which is 700-750 DEG C, is passed through flow3、
The N of the TMIn and 100-130L/min of TMGa, 1500-2000sccm of 20-40sccm2Under conditions of, growth thickness 2.5-
The In of the doping In of 3.5nmxGa(1-x)N layers, wherein x=0.20-0.25, emission wavelength 450-455nm；
Temperature is increased to 750-850 DEG C, reaction cavity pressure is 300-400mbar, to be passed through flow be 50000-70000sccm's
NH3, 20-100sccm TMGa and 100-130L/min N2Under conditions of, growth thickness is the GaN layer of 8-15nm；
In described in periodical alternating growthxGa(1-x)N layers obtain In with GaN layerxGa(1-x)N/GaN luminescent layer, wherein growth cycle
Number is 7-15.
8. LED epitaxial growing method according to claim 1, which is characterized in that growing P-type AlGaN layer, into
One step are as follows:
Reaction cavity pressure be 200-400mbar, the NH that it is 50000-70000sccm that temperature, which is 900-950 DEG C, is passed through flow3、
The H of TMGa, 100-130L/min of 30-60sccm2, 100-130sccm TMAl and 1000-1300sccm Cp2The condition of Mg
Under, continued propagation with a thickness of 50-100nm p-type AlGaN layer, wherein Al doping concentration be 1E20-3E20atom/cm3, Mg mixes
Miscellaneous concentration 1E19-1E20atom/cm3。
9. LED epitaxial growing method according to claim 1, which is characterized in that the p-type GaN of magnesium is mixed in growth
Layer, further are as follows:
Reaction cavity pressure be 400-900mbar, the NH that it is 50000-70000sccm that temperature, which is 950-1000 DEG C, is passed through flow3、
The H of TMGa, 100-130L/min of 20-100sccm2And the Cp of 1000-3000sccm2Under conditions of Mg, continued propagation with a thickness of
The p-type GaN layer for mixing magnesium of 50-200nm, wherein Mg doping concentration is 1E19-1E20atom/cm3。
10. a kind of light emitting diode, which is characterized in that from the bottom to top successively include: Sapphire Substrate, low temperature buffer layer GaN, no
Doped gan layer, the N-type GaN layer for adulterating Si, ZnInGaN/MgAlN/SiInAlN superlattice layer, InxGa(1-x)N/GaN luminescent layer,
P-type AlGaN layer and the p-type GaN layer for mixing magnesium；Wherein, the ZnInGaN/MgAlN/SiInAlN superlattice layer is by following steps system
:
Reaction cavity pressure be 500-750mbar, the NH that it is 50000-55000sccm that temperature, which is 950-1000 DEG C, is passed through flow3、
The H of TMGa, 90-110L/min of 50-70sccm2, 1200-1400sccm TMIn and 900-1200sccm DMZn condition
Under, grow the ZnInGaN layer of 8-15nm, wherein In doping concentration is 3E19-4E19atom/cm3, Zn doping concentration is 1E19-
1E20atom/cm3；
It maintains reaction chamber pressure and temperature constant, is passed through the NH that flow is 50000-55000sccm3, 100-200sccm TMAl,
The H of 90-110L/min2And the Cp of 900-1000sccm2Under conditions of Mg, the MgAlN layer of 4-7nm is grown, wherein Mg doping is dense
Degree is 1E19-1E20atom/cm3；
It maintains reaction chamber pressure and temperature constant, is passed through the NH that flow is 50000-55000sccm3, 90-110L/min H2、
The SiH of the TMIn and 20-30sccm of TMAl, 1800-2500sccm of 300-600sccm4Under conditions of, growth thickness 8-
The SiInAlN layer of 15nm, wherein Si doping concentration is 1E18-5E18atom/cm3；
ZnInGaN layers, MgAlN layers and SiInAlN layers of cyclical growth obtain ZnInGaN/MgAlN/SiInAlN superlattice layer,
Wherein, growth cycle 5-15.
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| CN103346226A (en) * | 2013-07-02 | 2013-10-09 | 湘能华磊光电股份有限公司 | LED epitaxy structure and growing method of same |
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| CN103346226A (en) * | 2013-07-02 | 2013-10-09 | 湘能华磊光电股份有限公司 | LED epitaxy structure and growing method of same |
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