CN105789401A - LED and formation method of LED - Google Patents
LED and formation method of LED Download PDFInfo
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- CN105789401A CN105789401A CN201410812017.7A CN201410812017A CN105789401A CN 105789401 A CN105789401 A CN 105789401A CN 201410812017 A CN201410812017 A CN 201410812017A CN 105789401 A CN105789401 A CN 105789401A
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Abstract
The invention discloses a formation method of an LED. The formation method comprises following steps of providing a substrate; forming a buffer layer on the substrate; forming a first type GaN layer on the buffer layer; forming a quantum well layer on the first type GaN layer; forming an electron blocking layer on the quantum well layer; forming a second type GaN seed crystal layer on the electron blocking layer at a first temperature, wherein the second type GaN seed crystal layer is equipped with a first thickness; forming a second type GaN layer on the second GaN seed crystal layer at a second temperature, wherein the second type GaN layer is equipped with a second thickness, wherein the second thickness is greater than the first thickness, and the second temperature is greater than the first temperature. According to the formation method of the LED, the quality of an epitaxial layer can be ensured, the surface roughening effect of the epitaxial layer is good, and the optical efficiency of the LED is improved. The invention also discloses an LED.
Description
Technical field
The invention belongs to light emitting device technologies field, particularly relate to the forming method of a kind of LED and adopt the LED of the method formation.
Background technology
Light emitting diode (LED) is a kind of junction type electroluminescent semiconductor device that can convert the electrical signal to optical signal, gallium nitride (GaN) based light-emitting diode as solid state light emitter once occur just with its high efficiency, long-life, the advantages such as environmental protection are described as the revolution again that the mankind after Edison invented electric light illuminate in history, become the focus of international semiconductor and lighting field research and development and industry concern, and with gallium nitride (GaN), InGaN (InGaN), it is 0.7～6.2eV that III-V group nitride material that aluminium gallium nitride alloy (AlGaN) and indium nitride gallium aluminium (AlGaInN) are main has continuously adjustable direct bandwidth, cover the spectral region from ultraviolet light to infrared light, it is manufacture blue light, the ideal material of green glow and white light emitting device.
The lifting of GaN base LED performance for a long time is largely determined by the raising of quantum efficiency, is also always up the emphasis direction researched and developed in the industry.The photoelectric transformation efficiency of current GaN base LED chip entirety is about 30%.The photoelectric efficiency of LED chip is equal to the product of internal quantum efficiency with light extraction efficiency, and the internal quantum efficiency of current LED can reach 80%～90%, and the space continued to lift up is less, and difficulty is also bigger.And light extraction efficiency only has about 40% at present, also has very big room for promotion.The main cause that light extraction efficiency is low is that P type GaN refractive index is significantly high (is about 2.5 for tradition, critical angle is about 23.5 °), this makes the light that active area sends have major part to occur total reflection can not shine in air in surface, but to experience multiple internal reflection, until being absorbed by LED, thus result in chip temperature to raise, increased the weight of the heat dissipation problem of device, and then reduced the internal quantum efficiency of device.
Therefore, improving light extraction efficiency Main way is the light ratio row reducing total reflection, makes more light can penetrate from surface.Propose in the industry the technology such as photonic crystal, surface coarsening, PSS substrate for this, wherein surface texture technology receives much concern due to simple and effective feature.The P type surface that traditional P type GaN growth mode grows out presents smooth mirror status, and full transmitting easily occurs light, reduces light extraction efficiency.Current method for coarsening surface specifically includes that 1, chemical corrosion method；2, ICP engraving method；3, pre-logical Mg epitaxial growth alligatoring P-GaN；4, the method such as low-temperature epitaxy growth P-GaN, first two is chip technology method, and latter two is epitaxy technique method.Wherein, although logical Mg source epitaxial growth method also can obtain the epitaxial surface of alligatoring in advance, the extraction efficiency of light is promoted, but the method easily generates the compound of magnesium nitride in growth course, causing that the Mg atomic concentration of effectively activation is low, hole concentration declines, thus causing that internal quantum efficiency is low, voltage raises；The method of low-temperature epitaxy P-GaN also can obtain the epitaxial surface of alligatoring, but the method is premised on the crystal mass reducing P-GaN, therefore there is the problems such as reverse leakage current is excessive, affects device lifetime, so that two kinds of methods are affected by restriction in actual applications.
Summary of the invention
It is contemplated that one of technical problem solved at least to a certain extent in correlation technique.For this, it is an object of the present invention to propose the forming method of a kind of LED, this forming method can ensure epitaxial layer quality, it is to avoid reverse leakage current strengthen premise under, improve coarsening surface of epitaxial layer effect, and then improve LED light extraction efficiency.
Further object is that a kind of LED of proposition.
For reaching above-mentioned purpose, one aspect of the present invention embodiment proposes the forming method of a kind of LED, and this forming method comprises the following steps: provide substrate；Form cushion in described substrate, and on described cushion, form first kind GaN layer；Quantum well layer is formed on described first kind GaN layer；Electronic barrier layer is formed on described quantum well layer；Forming Second Type GaN inculating crystal layer on described electronic barrier layer with the first temperature, wherein, described Second Type GaN inculating crystal layer has the first thickness；And on described Second Type GaN inculating crystal layer, form Second Type GaN layer with the second temperature, wherein, described Second Type GaN layer has the second thickness, and described second thickness is more than described first thickness, and described second temperature is more than described first temperature.
nullThe forming method of LED according to embodiments of the present invention，By first forming Second Type GaN inculating crystal layer on electronic barrier layer with the first temperature，The inculating crystal layer formed at the first temperature is in three-dimensional island structure，Form preliminary alligatoring effect，First thinner thickness simultaneously，Weaken due to the impact causing crystal mass poor on the low side of the first temperature，And then form Second Type GaN layer with the second temperature fast-growth on Second Type GaN inculating crystal layer，And second temperature more than the first temperature，Second temperature can ensure that and obtains good crystal mass，Avoid reducing internal quantum efficiency、Reverse leakage current is excessive waits negative effect，，The Second Type GaN adopting alligatoring replaces traditional high temperature Second Type GaN，Form coarse surface，The total reflection owing to GaN refractive index height causes can be weakened，Improve light extraction efficiency.
For reaching above-mentioned purpose, another aspect of the present invention embodiment proposes a kind of LED, this LED and adopts the forming method of above-mentioned aspect embodiment to be formed.
LED according to embodiments of the present invention, by the forming method of above-mentioned aspect embodiment, forms coarse surface, it is possible in the quality ensureing epitaxial layer, it is to avoid under the premise that reverse leakage current strengthens, and weakens the total reflection owing to GaN refractive index height causes, improves light extraction efficiency.
Accompanying drawing explanation
Fig. 1 is the flow chart of the forming method of LED according to an embodiment of the invention；
Fig. 2 is the result schematic diagram of the LED of the formation of a specific embodiment according to the present invention；And
Fig. 3 is the structural representation of the LED of formation according to another embodiment of the invention.
Detailed description of the invention
Being described below in detail embodiments of the invention, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has the element of same or like function from start to finish.The embodiment described below with reference to accompanying drawing is illustrative of, it is intended to is used for explaining the present invention, and is not considered as limiting the invention.
Below with reference to the accompanying drawings the forming method describing the LED of the embodiment of the present invention and the LED adopting this forming method to be formed.
First the forming method of the LED of the embodiment of the present invention is illustrated.Wherein, in a particular embodiment of the present invention, in LED forming process, adopt trimethyl gallium (TMGa), triethyl-gallium (TEGa), trimethyl aluminium (TMAl), trimethyl indium (TMIn), two luxuriant magnesium (Cp2Mg), ammonia (NH3), silane (SiH4) as deposition material, and respectively using hydrogen (H2) and nitrogen (N2) as carrier gas.
Fig. 1 is the flow chart of the forming method of LED according to an embodiment of the invention, as it is shown in figure 1, the forming method of this LED comprises the following steps:
S1, provides substrate.
In an embodiment of the present invention, as shown in Figure 2, it is possible to adopt sapphire as substrate 10.
S2, forms cushion in substrate, and forms first kind GaN layer on cushion.
nullSpecifically，First the substrate 10 such as Sapphire Substrate obtained is processed，As specific embodiment，Such as by MOCVD (Metal-organicChemicalVaporDeposition，MOCVD) utilize H2 that the temperature of 1050 DEG C, Sapphire Substrate is carried out hydrogenation treatment，Then temperature is reduced to GaN cushion 20 530 DEG C thick for deposition about 30nm on a sapphire substrate，As shown in Figure 2，And then heat up，Grow the intrinsic GaN layer 30 of 2 μm of undoped with TMGa and NH3 for source when temperature rises to 1000 DEG C，Then in intrinsic GaN layer 30, form first kind GaN layer 40，First kind GaN layer 40 is N-type GaN layer，Such as grow 2 μm of N-type GaN mixing Si with SiH4 for doped source.
S3, forms quantum well layer on first kind GaN layer.
Specifically, for InGaN/GaN structure SQW, as shown in Figure 2, after forming first kind GaN layer 40, temperature is reduced to 750 DEG C, and then grow with TMIn, TEGa and NH3 for source 10 the cycle InGaN/GaN structure multiple quantum well light emitting district and quantum well layer 50, wherein InGaN thickness can be 3nm, GaN thickness can be 12nm.
S4, forms electronic barrier layer on quantum well layer.
Specifically, as in figure 2 it is shown, growth temperature raised, when being warmed up to 850 degree, growing electronic barrier layer 60, for instance with TMGa, TMAl and NH3 for source, with Cp2Mg for doped source, grow AlGaN electronic barrier layer, the thickness of AlGaN electronic barrier layer can be 30nm.
S5, forms Second Type GaN inculating crystal layer with the first temperature on electronic barrier layer.
Wherein, as in figure 2 it is shown, Second Type GaN inculating crystal layer 70 has the first thickness.In an embodiment of the present invention, Second Type GaN inculating crystal layer is P type GaN.It is understood that utilize low temperature to generate one layer of " seed crystal " thin layer, under lower temperature conditions, inculating crystal layer is in three-dimensional island structure, preliminary alligatoring effect can be formed, simultaneously thinner thickness, it is possible to weaken the impact that the crystal mass brought due to low-temperature epitaxy is poor.
In one embodiment of the invention, the first temperature range is at 750-850 DEG C, and the first thickness range is at 10-30nm.Such as, it is down to 800 DEG C in temperature, with TMGa and NH3 for source of the gas, with Cp2Mg for doped source, forms Second Type GaN inculating crystal layer 70, for instance the low temperature P type GaN inculating crystal layer of growth 20nm thickness.
S6, forms Second Type GaN layer with the second temperature on Second Type GaN inculating crystal layer.
As it is shown on figure 3, be the LED structure schematic diagram that formed of the forming method of LED according to embodiments of the present invention；Wherein, Second Type GaN layer 80 is P type GaN layer, and Second Type GaN layer 80 has the second thickness, and the second thickness is more than the first thickness, and the second temperature is more than the first temperature.From Material growth aspect it is recognised that at the seed crystal surface high growth temperature P type GaN of preliminary alligatoring, high temperature can ensure that good crystal mass, it is to avoid reduce the adverse effects such as LED internal quantum efficiency, reverse leakage current be excessive.
Specifically, in an embodiment of the present invention, the second temperature range can at 900-1000 DEG C, second thickness range can at 90-110nm, such as, after growing inculating crystal layer with 800 DEG C, heat up, when temperature reaches 950 DEG C, growth Second Type GaN layer 80, for instance, with TMGa and NH3 for source of the gas, with Cp2Mg for doped source, the P type GaN layer of growth 100nm thickness.
It addition, the speed of growth also can affect the alligatoring effect of grown layer, if under higher temperature and the relatively low speed of growth, GaN tends to the growth pattern of the step stream of two dimension, and growing surface is more smooth；And the speed of growth can ensure that the alligatoring effect of inculating crystal layer is extended faster, in some embodiments of the invention, the speed of growth of Second Type GaN layer 80 can at 0.5-1.5 μm/h, such as, growth Second Type GaN layer 80 is controlled, thus reaching good alligatoring effect with the speed of growth of 1um/h.As it is shown on figure 3, coarse surface will not override, and then obtain comparatively ideal coarse surface.
Can be seen that, for the problem in correlation technique, the forming method of the LED of the embodiment of the present invention, first adopt low-temperature epitaxy P type GaN inculating crystal layer, then the growth pattern of high temperature fast-growth P type GaN layer, desirable coarse surface can be obtained so that light is not susceptible to total reflection, improve light extraction efficiency.
The forming method of LED according to embodiments of the present invention, by first forming Second Type GaN inculating crystal layer on electronic barrier layer with the first temperature, and then on Second Type GaN inculating crystal layer, form Second Type GaN layer with the second temperature, and second temperature more than the first temperature, coarsening surface of epitaxial layer is effective, can ensure that the crystal mass of Second Type GaN, so avoid the internal quantum efficiency of LED to reduce, reverse leakage current excessive.The Second Type GaN adopting alligatoring replaces traditional high temperature Second Type GaN, forms the coarse surface of grown layer, it is possible to weakens the total reflection owing to GaN refractive index height causes, improves light extraction efficiency.It addition, Second Type GaN layer is formed with the speed of growth faster, for instance the speed of growth is at 0.5-1.5 μm/h, it is possible to making the alligatoring effect of inculating crystal layer be extended, alligatoring is uncovered, and alligatoring effect is more preferably.
Another aspect of the present invention embodiment also proposes the LED that more than one forming methods stating aspect embodiment are formed, as in figure 2 it is shown, LED includes: substrate 10 such as sapphire, GaN cushion 20, assertive evidence GaN layer 30, first kind GaN layer 40, quantum well layer 50 such as InGaN/GaN structure MQW, electronic barrier layer 60, Second Type GaN inculating crystal layer 70, Second Type GaN layer 80.
The LED of the embodiment of the present invention, by the forming method of above-mentioned aspect embodiment, forms the coarse surface of grown layer, can in the quality ensureing epitaxial layer, avoid under the premise that reverse leakage current strengthens, weaken the total reflection owing to GaN refractive index height causes, improve light extraction efficiency.
In the description of this specification, specific features, structure, material or feature that the description of reference term " embodiment ", " some embodiments ", " example ", " concrete example " or " some examples " etc. means in conjunction with this embodiment or example describe are contained at least one embodiment or the example of the present invention.In this manual, the schematic representation of above-mentioned term is necessarily directed to identical embodiment or example.And, the specific features of description, structure, material or feature can combine in one or more embodiments in office or example in an appropriate manner.Additionally, when not conflicting, the feature of the different embodiments described in this specification or example and different embodiment or example can be carried out combining and combining by those skilled in the art.
Additionally, term " first ", " second " are only for descriptive purposes, and it is not intended that indicate or imply relative importance or the implicit quantity indicating indicated technical characteristic.Thus, define " first ", the feature of " second " can express or implicitly include at least one this feature.In describing the invention, " multiple " are meant that at least two, for instance two, three etc., unless otherwise expressly limited specifically.
Describe in flow chart or in this any process described otherwise above or method and be construed as, represent and include the module of code of executable instruction of one or more step for realizing specific logical function or process, fragment or part, and the scope of the preferred embodiment of the present invention includes other realization, wherein can not press order that is shown or that discuss, including according to involved function by basic mode simultaneously or in the opposite order, performing function, this should be understood by embodiments of the invention person of ordinary skill in the field.
Represent in flow charts or in this logic described otherwise above and/or step, such as, it is considered the sequencing list of executable instruction for realizing logic function, may be embodied in any computer-readable medium, use for instruction execution system, device or equipment (such as computer based system, including the system of processor or other can from instruction execution system, device or equipment instruction fetch the system performing instruction), or use in conjunction with these instruction execution systems, device or equipment.For the purpose of this specification, " computer-readable medium " can be any can comprise, store, communicate, propagate or transmission procedure is for instruction execution system, device or equipment or the device that uses in conjunction with these instruction execution systems, device or equipment.The example more specifically (non-exhaustive list) of computer-readable medium includes following: have the electrical connection section (electronic installation) of one or more wiring, portable computer diskette box (magnetic device), random access memory (RAM), read only memory (ROM), erasable edit read only memory (EPROM or flash memory), fiber device, and portable optic disk read only memory (CDROM).Additionally, computer-readable medium can even is that the paper that can print described program thereon or other suitable media, because can such as by paper or other media be carried out optical scanning, then carry out editing, interpreting or be processed to electronically obtain described program with other suitable methods if desired, be then stored in computer storage.
Should be appreciated that each several part of the present invention can realize with hardware, software, firmware or their combination.In the above-described embodiment, multiple steps or method can realize with the storage software or firmware in memory and by suitable instruction execution system execution.Such as, if realized with hardware, the same in another embodiment, can realize by any one in following technology well known in the art or their combination: there is the discrete logic of logic gates for data signal realizes logic function, there is the special IC of suitable combination logic gate circuit, programmable gate array (PGA), field programmable gate array (FPGA) etc..
Those skilled in the art are appreciated that realizing all or part of step that above-described embodiment method carries can be by the hardware that program carrys out instruction relevant and complete, described program can be stored in a kind of computer-readable recording medium, this program upon execution, including the step one or a combination set of of embodiment of the method.
Additionally, each functional unit in each embodiment of the present invention can be integrated in a processing module, it is also possible to be that unit is individually physically present, it is also possible to two or more unit are integrated in a module.Above-mentioned integrated module both can adopt the form of hardware to realize, it would however also be possible to employ the form of software function module realizes.If described integrated module is using the form realization of software function module and as independent production marketing or use, it is also possible to be stored in a computer read/write memory medium.
Storage medium mentioned above can be read only memory, disk or CD etc..Although above it has been shown and described that embodiments of the invention, it is understandable that, above-described embodiment is illustrative of, it is impossible to be interpreted as limitation of the present invention, and above-described embodiment can be changed, revises, replace and modification by those of ordinary skill in the art within the scope of the invention.
Claims (9)
1. the forming method of a LED, it is characterised in that comprise the following steps:
Substrate is provided；
Form cushion in described substrate, and on described cushion, form first kind GaN layer；
Quantum well layer is formed on described first kind GaN layer；
Electronic barrier layer is formed on described quantum well layer；
Forming Second Type GaN inculating crystal layer on described electronic barrier layer with the first temperature, wherein, described Second Type GaN inculating crystal layer has the first thickness；And
Forming Second Type GaN layer on described Second Type GaN inculating crystal layer with the second temperature, wherein, described Second Type GaN layer has the second thickness, and described second thickness is more than described first thickness, and described second temperature is more than described first temperature.
2. the forming method of LED as claimed in claim 1, it is characterised in that described first temperature range is at 750-850 DEG C, and described second temperature range is at 900-1000 DEG C.
3. the forming method of LED as claimed in claim 2, it is characterised in that described first temperature is 800 DEG C, and described second temperature is 950 DEG C.
4. the forming method of LED as claimed in claim 1, it is characterised in that described first thickness range is at 10-30nm, and described second thickness range is at 90-110nm.
5. the forming method of LED as claimed in claim 4, it is characterised in that described first thickness is 20nm, and described second thickness is 100nm.
6. the forming method of LED as claimed in claim 1, it is characterised in that described first kind GaN layer is N-type GaN layer, and described Second Type GaN inculating crystal layer is P type GaN layer, and described Second Type GaN layer is P type GaN layer.
7. the forming method of LED as claimed in claim 1, it is characterised in that the speed of growth of described Second Type GaN layer is at 0.5-1.5 μm/h.
8. the forming method of LED as claimed in claim 1, it is characterised in that when forming described Second Type GaN inculating crystal layer and described Second Type GaN layer with TMGa and NH3 for source of the gas, with Cp2Mg for doped source.
9. a LED, it is characterised in that formed by the method as described in any one of claim 1-8.
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| CN107731970A (en) * | 2017-10-24 | 2018-02-23 | 江门市奥伦德光电有限公司 | A kind of preparation method of the LED epitaxial structure with current barrier layer |
| WO2019047092A1 (en) * | 2017-09-07 | 2019-03-14 | 苏州晶湛半导体有限公司 | Surface roughening method for light emitting device and light emitting device |
| CN112133797A (en) * | 2020-08-11 | 2020-12-25 | 华灿光电（浙江）有限公司 | Growth method of light emitting diode epitaxial wafer |
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