CN104485404B - A kind of high brightness near ultraviolet LED and its epitaxial growth method - Google Patents
A kind of high brightness near ultraviolet LED and its epitaxial growth method Download PDFInfo
- Publication number
- CN104485404B CN104485404B CN201410836566.8A CN201410836566A CN104485404B CN 104485404 B CN104485404 B CN 104485404B CN 201410836566 A CN201410836566 A CN 201410836566A CN 104485404 B CN104485404 B CN 104485404B
- Authority
- CN
- China
- Prior art keywords
- layers
- thickness
- layer
- chamber pressure
- stress release
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 3
- 239000010980 sapphire Substances 0.000 claims abstract description 3
- 239000012298 atmosphere Substances 0.000 claims description 27
- 239000001257 hydrogen Substances 0.000 claims description 20
- 229910052739 hydrogen Inorganic materials 0.000 claims description 20
- 230000004888 barrier function Effects 0.000 claims description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 8
- 238000005036 potential barrier Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 2
- 150000002431 hydrogen Chemical class 0.000 description 18
- 239000011777 magnesium Substances 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000012576 optical tweezer Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000005701 quantum confined stark effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a kind of high brightness near ultraviolet light emitting diode and its epitaxial growth method.The LED structure structure is followed successively by from bottom to top：Graphical sapphire substrate, low temperature GaN nucleating layers, high temperature undoped GaN cushions, n-type GaN layer, the n In in 10 to 20 cyclesx1Ga1‑x1N/Aly1Ga1‑y1N superlattices stress release layer, InxGa1‑xN/AlyGa1‑yN multi-quantum well active regions, AlInGaN layers of low-temperature p-type, high temperature p-type GaN layer and p-type InGaN contact layers, wherein stress release layer can effectively reduce V-type defect concentration with the increase of number of superlattice cycles, alleviate the stress that SQW is subject to, and then effectively improve the luminous efficiency of near ultraviolet LED.
Description
Technical field
MOCVD (metallo-organic compound gas is used the present invention relates to field of semiconductor photoelectron technique, more particularly to one kind
Phase epitaxy) high brightness near ultraviolet LED of the technology preparation with the wide gradual change superlattice structure stress release layer of trap.
Background technology
Ultraviolet semiconductor light source is mainly used in biologic medical, authentication, purification (water, air etc.) field, computer
In terms of data storage and military affairs.With the progress of ultraviolet Technology, new application can continuously emerge to substitute original technology
And product, ultraviolet leds have wide market application foreground.Ultraviolet source will develop general illumination, optical tweezer, plant life
Purposes in terms of length, petroleum pipeline leak detection, archaeology application, discriminating are true and false.Semiconductor ultraviolet source is used as semiconductor lighting
Another great industry direction afterwards, has caused the extensive concern of semiconductor optoelectronic industry.The U.S., Japan, South Korea etc. are invariably
Huge strength is put into occupy the commanding elevation of industry.
At present, the matter of utmost importance that ultraviolet LED technology faces is that its light efficiency is low.Wavelength 365nm ultraviolet LED power output is only
For the 5%-8% of input power.For more than wavelength 385nm ultraviolet LED electricity conversion relative to shortwave with obvious
Improve, but power output only has the 15% of input power.Effectively improving the light efficiency of ultraviolet LED turns into focus of attention in the industry, and
It is quantum confined stark effect caused by stress to influence one of major reason of efficiency of ultraviolet leds, therefore, is modulated active
Area's stress plays an important roll to improving UV-light luminous efficiency.
The content of the invention
It is an object of the invention to provide high brightness near ultraviolet light emitting diode prepared by a kind of use MOCVD technologies, lead to
Cross and design new LED structure, there is the wide n-InGaN/AlGaN superlattice structures of gradual change trap as stress using modulation doping
Releasing layer, effectively alleviates active area stress, and improves horizontal direction current expansion, and then realizes the luminous effect of raising near ultraviolet LED
The purpose of rate.
The present invention provides a kind of high brightness near ultraviolet LED, as shown in figure 1, the order of the LED epitaxial structure from bottom to top
It is followed successively by：Graphical sapphire substrate 101, low temperature GaN nucleating layers 102, high temperature undoped GaN cushions 103, n-type GaN layer
104th, the n-In of the wide gradual change of trapx1Ga1-x1N/Aly1Ga1-y1N superlattices stress release layer 105, InxGa1-xN/AlyGa1-yN Multiple-quantums
Trap active layer 106, p-Aly2Inx2Ga1-x2-y2N electronic barrier layers 107, high temperature p-type GaN layer 108 and p-type InGaN contact layers 109,
Wherein, the wide gradual change n-In of trapx1Ga1-x1N/Aly1Ga1-y1The periodicity of N superlattices stress release layer 105 is 10 to 20, n-
Inx1Ga1-x1N/Aly1Ga1-y1Potential well In in N superlattices stress release layersx1Ga1-x1N layers of thickness is to be become greater to from 1nm stageds
5.5nm, potential barrier Aly1Ga1-y1N thickness degree keeps fixed numbers constant, potential barrier Aly1Ga1-y1N layers of thickness range are 2.5-3nm,
InxGa1-xN/AlyGa1-yThe periodicity of N multiple quantum well active layers 106 is 5-10, n-Inx1Ga1-x1N/Aly1Ga1-y1N superlattices should
Power releasing layer 105 and InxGa1-xN/AlyGa1-y0.01≤x in N multiple quantum well active layers 1061≤ x≤0.1,0.01≤y1≤y
≤0.1；p-Aly2Inx2Ga1-x2-y2N electronic barrier layers 107 and InxGa1-xN/AlyGa1-y0.01 in N multiple quantum well active layers 106
≤x2≤x≤0.1；0.01≤y2≤y≤0.1。
The present invention provides the epitaxial growth method that a kind of use MOCVD technologies prepare high brightness near ultraviolet LED, including following
Step：
Step one, by Al in Metal Organic Vapor epitaxial reactor2O3Substrate in a hydrogen atmosphere, 1080 DEG C-
Chamber pressure 100torr at 1100 DEG C, is handled 5-10 minutes；Then temperature is reduced, in 530-550 DEG C, chamber pressure
500torr, in hydrogen (H2) under atmosphere, V/III mol ratios are 500-1300, the low temperature GaN of three dimensional growth 20-30 nanometer thickness into
Stratum nucleare；
Step 2, at 1000-1500 DEG C, chamber pressure is 200-300torr, in hydrogen (H2) under atmosphere, V/III
Mol ratio is 1000-1300, grows 2-4 microns thick high temperature undoped GaN cushions；
Step 3, at 1000-1500 DEG C, chamber pressure is 100-200torr, in hydrogen (H2) under atmosphere, V/III
Mol ratio is 1000-1300, grows 2-4 microns of n-GaN layers of thickness, and Si doping concentrations are 1018-1019cm-3；
Step 4, at 750-850 DEG C, in nitrogen (N2) under atmosphere, V/III mol ratios are 5000-10000, reative cell
Pressure 300torr, grows the n-type In of the wide gradual change of SQW in 10 to 20 cyclesx1Ga1-x1N/Aly1Ga1-y1N superlattice structures
N-type stress release layer, wherein with the increase of number of superlattice cycles, In thereinx1Ga1-x1N layers of thickness is from 1nm ladders
Formula changes to 5.5nm, and barrier layer Aly1Ga1-y1N thickness degree keeps fixed numbers constant；Wherein In components of stress release layer
x1Less than active area In components x (0.01≤x1≤x≤0.1), Al components y1Less than active area Al component y (0.01≤y1≤y≤
0.1).Si doping concentrations are more than 1018cm-3；
Step 5, at 750-850 DEG C, in nitrogen (N2) under atmosphere, V/III mol ratios are 5000-10000, reative cell
Pressure 300torr, then grows 5-10 cycles InxGa1-xN/AlyGa1-yN multiple quantum well active layers；Wherein InxGa1-xN SQWs
Thickness degree is 2-3nm, AlyGa1-yN barrier layer thicknesses are 10-20nm, wherein 0<x≤0.1；0<y≤0.1；
Step 6, at 780 DEG C -850 DEG C, on the active area, in a nitrogen atmosphere, V/III mol ratios are 5000-
10000, chamber pressure 100-300torr, growth 20nm-40nm p-Aly2Inx2Ga1-x2-y2N electronic barrier layers；Mg doping is dense
Spend for 1017-1018cm-3, wherein In components x2Less than active area In component x (0.01≤x2≤ x≤0.1), Al components y2Less than having
Source region Al component y (0.01≤y2≤y≤0.1)。
Step 7, at 950 DEG C -1050 DEG C, in a hydrogen atmosphere, V/III mol ratios are 2000-5000, react chamber pressure
Power 100torr, growth 100nm-200nm p-GaN, Mg doping concentration are 1017-1018cm-3。
Step 8, at 650 DEG C -750 DEG C, in a hydrogen atmosphere, V/III mol ratios are 5000-10000, react chamber pressure
Power 300torr, grows 2nm-3nm p-type InGaN contact layers, and Mg doping concentrations are more than 1018cm-3。
The present invention can effectively reduce V-type defect concentration by optimizing n-type stress release layer, and what alleviation SQW was subject to should
Power；And In in superlattices stress release layerx1Ga1-x1N layers of thickness is the Al from 1nm step variation to 5.5nmy1Ga1-y1N layers
Thickness (2.5-3nm) keeps constant, can improve horizontal direction current expansion, improves Carrier Injection Efficiency, and then effectively improve
The luminous efficiency of near ultraviolet LED.
Brief description of the drawings
Fig. 1 is the sectional elevation view of high brightness near ultraviolet light emitting diode of the present invention；
Fig. 2 uses new stress release layer near ultraviolet light emitting diode UV-LED1 in the embodiment of the present invention 1, using this hair
New stress release layer near ultraviolet light emitting diode UV-LED2 luminous powers are with Injection Current change curve in bright embodiment 2.
Embodiment
Embodiment 1
Using Aixtron companies, the vertical reative cell MOCVD growing systems of close coupling.Trimethyl gallium is used in growth course
(TMGa), trimethyl indium (TMIn), trimethyl aluminium (TMAl) is used as group III source, ammonia (NH3) it is used as group V source, silane (SiH4)
As n-shaped doped source, two luxuriant magnesium (Cp2Mg) as p-type doped source, by graphical Al first in MOCVD reative cells2O3Substrate
101 are heated to 1080-1100 degrees Celsius, are 100torr in chamber pressure, in H2Lower processing 5 minutes, is then cooled to
530-550 degrees Celsius in graphical Al2O3On substrate, chamber pressure 500torr, under hydrogen (H2) atmosphere, V/III mol ratios
For 500-1300, the low temperature GaN nucleating layers of three dimensional growth 20-30 nanometer thickness, at 1000-1500 DEG C, chamber pressure is
200-300torr, in hydrogen (H2) under atmosphere, V/III mol ratios are 1000-1300；The 2-4 microns thick high temperature undoped of growth
GaN cushions；At 1000-1500 DEG C, chamber pressure is 100-200torr, in hydrogen (H2) under atmosphere, V/III moles
Than for 1000-1300, growing 2-4 microns of n-GaN layers of thickness；Si doping concentrations are 1018-1019cm-3；At 750-850 DEG C, in nitrogen
Gas (N2) under atmosphere, V/III mol ratios are 5000-10000, chamber pressure 300torr, and the SQW for growing 10 cycles is wide
The n-type In of gradual changex1Ga1-x1N/Aly1Ga1-y1The n-type stress release layer of N superlattice structures, the wherein potential well in stress release layer
Layer Inx1Ga1-x1N thickness is followed successively by with the increase of number of superlattice cycles：1nm、1.5nm、2nm、2.5nm、3nm、3.5nm、
4nm, 4.5nm, 5nm, 5.5nm, barrier layer Aly1Ga1-y1N thickness degree is 2.5nm；The wherein In components x of stress release layer1It is less than
Active area In component x (0.01≤x1≤ x≤0.1), Al components y1Less than or equal to active area Al component y=0.05 (0.01≤y1≤
y≤0.1).Si doping concentrations are more than 1019cm-3；At 750-850 DEG C, in nitrogen (N2) under atmosphere, V/III mol ratios are
5000-10000, chamber pressure 300torr, then grow 5 cycle InxGa1-xN/AlyGa1-yN multiple quantum well active layers, wherein
InxGa1-xN quantum well layer thickness is 2nm；AlyGa1-yN barrier layer thicknesses are 10nm, and x=0.05；Y=0.05；780 DEG C-
At 850 DEG C, in a nitrogen atmosphere, V/III mol ratios are 5000-10000, chamber pressure 100-300torr, continued growth
20nm p-Aly2Inx2Ga1-x2-y2N electronic barrier layers；x2=0.05, y2=0.05Mg doping concentrations are 1017-1018cm-3.
At 950 DEG C -1050 DEG C, in a hydrogen atmosphere, V/III mol ratios are 2000-5000, chamber pressure 100torr, growth
100nmp-GaN.Mg doping concentrations are 1017-1018cm-3.At 650 DEG C -750 DEG C, in a nitrogen atmosphere, V/III mol ratios are
5000-10000, chamber pressure 300torr, growth 2nm p-InGaN.Mg doping concentrations are more than 1018cm-3。
Embodiment 2
Using Aixtron companies, the vertical reative cell MOCVD growing systems of close coupling.Trimethyl gallium is used in growth course
(TMGa), trimethyl indium (TMIn), trimethyl aluminium (TMAl) is used as group III source, ammonia (NH3) it is used as group V source, silane (SiH4)
As n-shaped doped source, two luxuriant magnesium (Cp2Mg) as p-type doped source, by graphical Al first in MOCVD reative cells2O3Substrate
201 are heated to 1080-1100 degrees Celsius, are 100torr in chamber pressure, in H2Lower processing 5 minutes, is then cooled to
530-550 degrees Celsius in graphical Al2O3On substrate, chamber pressure 500torr, under hydrogen (H2) atmosphere, V/III mol ratios
For 500-1300, the low temperature GaN nucleating layers of three dimensional growth 20-30 nanometer thickness, at 1000-1500 DEG C, chamber pressure is
200-300torr, in hydrogen (H2) under atmosphere, V/III mol ratios are 1000-1300,2-4 micron u-GaN layers of high temperature of thickness of growth；
At 1000-1500 DEG C, chamber pressure is 100-200torr, in hydrogen (H2) under atmosphere, V/III mol ratios are 1000-
1300,2-4 microns of thickness n-GaN layers 204 are grown, Si doping concentrations are 1018-1019cm-3；At 750-850 DEG C, in nitrogen (N2)
Under atmosphere, V/III mol ratios are 5000-10000, chamber pressure 300torr, grow the wide gradual change of SQW in 20 cycles
N-type Inx1Ga1-x1N/Aly1Ga1-y1The n-type stress release layer of N superlattice structures, wherein stress release layer potential well Inx1Ga1-x1N layers
Thickness be followed successively by with the increase of number of superlattice cycles：1nm、1nm、1.5nm、1.5nm、2nm、2nm、2.5nm、2.5nm、
3nm, 3nm, 3.5nm, 3.5nm, 4nm, 4nm, 4.5nm, 4.5nm, 5nm, 5nm, 5.5nm, 5.5nm, potential barrier Aly1Ga1-y1N thickness
Spend for 3nm；The wherein In components x of stress release layer1Less than active area In component x (0.01≤x1≤ x≤0.1), Al components y1It is small
In equal to active area Al component y=0.05 (0.01≤y1≤y≤0.1).Si doping concentrations are more than 1019cm-3；At 750-850 DEG C
Under, in nitrogen (N2) under atmosphere, V/III mol ratios are 5000-10000, chamber pressure 300torr, then grow for 10 cycles
InxGa1-xN/AlyGa1-yN multiple quantum well active layers, wherein InxGa1-xN quantum well layer thickness is 3nm；AlyGa1-yNl barrier layer is thick
Spend for 20nm；Wherein x=0.1；Y=0.1；At 780 DEG C -850 DEG C, on the active area, in a nitrogen atmosphere, V/III moles
Than for 5000-10000, chamber pressure 100-300torr, growing 40nmp-Aly2Inx2Ga1-x2-y2N electronic barrier layers；x2=
0.05,y2=0.1, Mg doping concentration are 1017-1018cm-3.At 950 DEG C -1050 DEG C, in a hydrogen atmosphere, V/III moles
Than for 2000-5000, chamber pressure 100torr, growth 200nm p-GaN.Mg doping concentrations are 1017-1018cm-3.650
At DEG C -750 DEG C, in a nitrogen atmosphere, V/III mol ratios are 5000-10000, chamber pressure 300torr, growth 3nm p-
InGaN.Mg doping concentrations are more than 1018cm-3。
After epitaxial growth terminates, the temperature of reative cell is down to 700-750 DEG C, made annealing treatment using pure nitrogen gas atmosphere
5-20min, is then down to room temperature, terminates growth, epitaxial structure is through the conventional die technique such as over cleaning, deposition, photoetching and etching
After single 6mil × 8mil small-size chips are made.It is illustrated in figure 2 using embodiment 1 and the technical side of embodiment 2 in the present invention
The photoelectric property for the black light LED chip (UV-LED1, UV-LED2) that case makes, wherein using the technical scheme system of embodiment 2
The black light LED of work improves more than 20% relative to the black light LED light power made using the technical scheme of embodiment 1；
Reason is that stress release layer in the technical scheme of embodiment 2 more preferably matches setting for active area SQW and whole LED growth structures
Meter, therefore obtain higher electron-hole recombinations luminous efficiency
Embodiment described above technological thought only to illustrate the invention and feature, it describes more specific and in detail,
Its object is to enable one of ordinary skill in the art to understand present disclosure and implement according to this, therefore can not be only with this
To limit the scope of the claims of the present invention, but therefore it can not be interpreted as limitation of the scope of the invention.It should be pointed out that pair
For one of ordinary skill in the art, without departing from the inventive concept of the premise, some deformations can also be made and changed
Enter, i.e., all changes made according to disclosed spirit should be covered in the scope of the claims of the present invention.
Claims (8)
1. a kind of high brightness near ultraviolet light emitting diode, it is characterised in that the LED epitaxial is stratiform overlaying structure, from
Upward material is followed successively by down：Graphical sapphire substrate, low temperature GaN nucleating layers, high temperature undoped GaN cushions, n-type GaN
Layer, n-Inx1Ga1-x1N/Aly1Ga1-y1N superlattices stress release layer, InxGa1-xN/AlyGa1-yN multiple quantum well active layers, p-
Aly2Inx2Ga1-x2-y2N electronic barrier layers, high temperature p-type GaN layer and p-type InGaN contact layers, wherein, n-Inx1Ga1-x1N/
Aly1Ga1-y1The periodicity of N superlattices stress release layers is 10 to 20, with the increase of number of superlattice cycles, n-Inx1Ga1-x1N/
Aly1Ga1-y1Potential well In in N superlattices stress release layersx1Ga1-x1N layers of thickness step formula becomes big, potential barrier Aly1Ga1-y1N thickness
Degree keeps fixed numbers constant, InxGa1-xN/AlyGa1-yThe periodicity of N multiple quantum well active layers is 5-10, n-Inx1Ga1-x1N/
Aly1Ga1-y1N superlattices stress release layer and InxGa1-xN/AlyGa1-y0.01≤x in N multiple quantum well active layers1≤ x≤0.1,
0.01≤y1≤y≤0.1；p-Aly2Inx2Ga1-x2-y2N electronic barrier layers and InxGa1-xN/AlyGa1-yIn N multiple quantum well active layers
0.01≤x2≤x≤0.1；0.01≤y2≤ y≤0.1, potential well Inx1Ga1-x1N layers of thickness is to be become greater to from 1nm stageds
5.5nm, potential barrier Aly1Ga1-y1N layers of thickness range is 2.5-3nm.
2. high brightness near ultraviolet light emitting diode as claimed in claim 1, it is characterised in that n-type GaN layer thickness range is 2-
4 microns, adulterate Si, and doping concentration is 1018-1019cm-3。
3. high brightness near ultraviolet light emitting diode as claimed in claim 1, it is characterised in that n-Inx1Ga1-x1N/Aly1Ga1- y1N superlattices stress release layer doping Si, doping concentration is more than 1019cm-3。
4. high brightness near ultraviolet light emitting diode as claimed in claim 1, it is characterised in that InxGa1-xN/AlyGa1-yN volumes
In in sub- trap active layerxGa1-xThe thickness range of N quantum well layers is 2-3nm；AlyGa1-yThe thickness range of Nl barrier layer is 10-
20nm。
5. light emitting diode as claimed in claim 1, it is characterised in that p-Aly2Inx2Ga1-x2-y2N electronic barrier layer thickness models
Enclose for 20nm-40nm, adulterate Mg, and doping concentration is 1017-1018cm-3。
6. light emitting diode as claimed in claim 1, it is characterised in that high temperature p-type GaN layer thickness range is 100nm-
200nm, adulterate Mg, and doping concentration is 1017-1018cm-3。
7. light emitting diode as claimed in claim 1, it is characterised in that p-type InGaN contact layers thickness range is 2nm-3nm,
Adulterate Mg, and doping concentration is more than 1018cm-3。
8. a kind of epitaxial growth method of high brightness near ultraviolet light emitting diode as claimed in claim 1, its step includes：
1) by Al in Metal Organic Vapor epitaxial reactor2O3Substrate in a hydrogen atmosphere, at 1080 DEG C -1100 DEG C
Chamber pressure 100torr, is handled 5-10 minutes；Then temperature is reduced, at 530-550 DEG C, chamber pressure 500torr,
Under hydrogen atmosphere, V/III mol ratios are 500-1300, the low temperature GaN nucleating layers of three dimensional growth 20-30 nanometer thickness；
2) at 1000-1500 DEG C, chamber pressure is 200-300torr, in a hydrogen atmosphere, and V/III mol ratios are 1000-
1300, grow 2-4 microns thick high temperature undoped GaN cushions；
3) at 1000-1500 DEG C, chamber pressure is 100-200torr, in a hydrogen atmosphere, and V/III mol ratios are 1000-
1300, grow 2-4 microns of n-GaN layers of thickness；Si doping concentrations are 1018-1019cm-3；
4) at 750-850 DEG C, in a nitrogen atmosphere, V/III mol ratios are 5000-10000, chamber pressure 300torr, life
The n-type In of the wide gradual change of SQW in long 10 to 20 cyclesx1Ga1-x1N/Aly1Ga1-y1The n-type stress release of N superlattice structures
Layer；With the increase of number of superlattice cycles, n-Inx1Ga1-x1N/Aly1Ga1-y1Potential well In in N superlattices stress release layersx1Ga1- x1N layers of thickness is the potential barrier Al from 1nm step variation to 5.5nmy1Ga1-y1N thickness degree keeps fixed numbers constant；
5) at 750-850 DEG C, in a nitrogen atmosphere, V/III mol ratios are 5000-10000, chamber pressure 300torr, are connect
Growth 5-10 cycles InxGa1-xN/AlyGa1-yN multiple quantum well active layers, wherein InxGa1-xN quantum well layer thickness is 2-3nm,
AlyGa1-yNl barrier layer thicknesses are 10-20nm；
6) at 780 DEG C -850 DEG C, on the active area, in a nitrogen atmosphere, V/III mol ratios are 5000-10000, reative cell
Pressure 100-300torr, growth 20nm-40nm p-Aly2Inx2Ga1-x2-y2N electronic barrier layers；Mg doping concentrations are 1017-
1018cm-3；
7) at 950 DEG C -1050 DEG C, in a hydrogen atmosphere, V/III mol ratios be 2000-5000, chamber pressure 100torr,
It is 10 to grow 100nm-200nm p-GaN, Mg doping concentration17-1018cm-3；
8) at 650 DEG C -750 DEG C, in a hydrogen atmosphere, V/III mol ratios be 5000-10000, chamber pressure 300torr,
2nm-3nm p-InGaN contact layers are grown, Mg doping concentrations are more than 1018cm-3。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410836566.8A CN104485404B (en) | 2014-12-29 | 2014-12-29 | A kind of high brightness near ultraviolet LED and its epitaxial growth method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410836566.8A CN104485404B (en) | 2014-12-29 | 2014-12-29 | A kind of high brightness near ultraviolet LED and its epitaxial growth method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104485404A CN104485404A (en) | 2015-04-01 |
| CN104485404B true CN104485404B (en) | 2017-07-28 |
Family
ID=52759929
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410836566.8A Active CN104485404B (en) | 2014-12-29 | 2014-12-29 | A kind of high brightness near ultraviolet LED and its epitaxial growth method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104485404B (en) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106299038B (en) * | 2015-06-04 | 2018-08-17 | 东莞市中镓半导体科技有限公司 | A method of preparing the p-type AlGaN/AlInGaN electronic barrier layer near ultraviolet LEDs with doping concentration and Al component step variations |
| CN105023978A (en) * | 2015-07-20 | 2015-11-04 | 聚灿光电科技股份有限公司 | Low-absorption LED epitaxial structure and preparing method thereof |
| CN105206723B (en) * | 2015-11-03 | 2017-11-07 | 湘能华磊光电股份有限公司 | A kind of epitaxial growth method for improving LED luminance |
| CN105428482B (en) * | 2015-12-30 | 2018-09-11 | 厦门市三安光电科技有限公司 | A kind of LED epitaxial structure and production method |
| CN105514239B (en) * | 2016-02-23 | 2018-12-04 | 安徽三安光电有限公司 | A kind of light emitting diode |
| CN107146832A (en) * | 2017-04-18 | 2017-09-08 | 湘能华磊光电股份有限公司 | A kind of epitaxial wafer of light emitting diode and preparation method thereof |
| CN107195735B (en) * | 2017-05-27 | 2019-08-02 | 华灿光电（浙江）有限公司 | Epitaxial wafer of light emitting diode and preparation method thereof |
| CN107768493A (en) * | 2017-10-24 | 2018-03-06 | 江门市奥伦德光电有限公司 | A kind of preparation method of the high LED epitaxial structure of luminous efficiency |
| CN108447952B (en) * | 2018-03-26 | 2020-04-14 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
| CN109192824B (en) * | 2018-09-03 | 2020-09-08 | 淮安澳洋顺昌光电技术有限公司 | Epitaxial wafer for improving brightness of gallium nitride-based light emitting diode and growth method |
| CN110635004A (en) * | 2019-08-28 | 2019-12-31 | 映瑞光电科技(上海)有限公司 | GaN-based light emitting diode epitaxial structure |
| CN111029448B (en) * | 2019-12-02 | 2021-01-19 | 广东省半导体产业技术研究院 | Near ultraviolet LED (light-emitting diode) adopting MOCVD (metal organic chemical vapor deposition) technology and preparation method thereof |
| CN112331750A (en) * | 2020-10-23 | 2021-02-05 | 华灿光电(苏州）有限公司 | Ultraviolet light-emitting diode epitaxial wafer and manufacturing method thereof |
| CN112259657B (en) * | 2020-10-26 | 2024-08-16 | 山西中科潞安紫外光电科技有限公司 | InAlGaN superlattice structure growth method, superlattice structure, epitaxial structure and chip |
| CN114300592B (en) * | 2021-12-28 | 2024-01-09 | 福建兆元光电有限公司 | Mini LED epitaxial structure and manufacturing method thereof |
| CN114649450B (en) * | 2022-01-26 | 2023-03-24 | 常熟理工学院 | Double-wavelength ultraviolet light emitting diode epitaxial layer structure and preparation method thereof |
| CN114335278B (en) * | 2022-03-16 | 2022-08-05 | 至芯半导体(杭州)有限公司 | Epitaxial structure of UVB chip and application thereof |
| CN115188863B (en) * | 2022-09-09 | 2022-12-06 | 江西兆驰半导体有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100850950B1 (en) * | 2006-07-26 | 2008-08-08 | 엘지전자 주식회사 | Nitride based light emitting diode |
| CN101789473B (en) * | 2010-02-23 | 2013-03-20 | 厦门大学 | GaN-based vertical structure light-emitting diode and preparation method thereof |
-
2014
- 2014-12-29 CN CN201410836566.8A patent/CN104485404B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN104485404A (en) | 2015-04-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104485404B (en) | A kind of high brightness near ultraviolet LED and its epitaxial growth method | |
| CN105932130B (en) | A kind of near ultraviolet LED with novel electron barrier layer and preparation method thereof | |
| CN104538521B (en) | A kind of high brightness near ultraviolet LED and preparation method thereof | |
| CN106299038B (en) | A method of preparing the p-type AlGaN/AlInGaN electronic barrier layer near ultraviolet LEDs with doping concentration and Al component step variations | |
| CN106033787B (en) | It is a kind of that the method with staged quantum well structure near ultraviolet LED is prepared using MOCVD technologies | |
| CN101488548B (en) | LED of high In ingredient multiple InGaN/GaN quantum wells structure | |
| CN103137805B (en) | For the wide range ultraviolet light-emitting diode and preparation method thereof of optical micro-sensor | |
| CN105070805B (en) | Silicon-based nitride ultraviolet LED epitaxial structure and implementation method thereof | |
| CN106784188B (en) | A kind of preparation method of the near ultraviolet LED with composite electron barrier layer | |
| CN108365069B (en) | Preparation method of high-brightness V-shaped polarized doped deep ultraviolet LED | |
| CN106098882B (en) | Light emitting diode epitaxial wafer and preparation method thereof | |
| CN105449051B (en) | One kind is using MOCVD technologies in GaN substrate or GaN/Al2O3The method that high brightness homogeneity LED is prepared in compound substrate | |
| CN105304770A (en) | Preparation method for near ultraviolet (NUV) LED containing Al component and thickness stepwise gradient type quantum barrier structure | |
| CN105449052B (en) | A kind of method that high brightness near ultraviolet LED is prepared using MOCVD technologies | |
| CN100580966C (en) | Green light-emitting diode | |
| CN106684213A (en) | Gan-based semiconductor device and manufacturing method thereof | |
| CN103824908A (en) | Epitaxial growth method for improving electrostatic endurance capacity of GaN-based light-emitting diode (LED) | |
| CN104576853A (en) | Epitaxial method for improving GaN based LED chip current spreading | |
| CN106033788B (en) | A kind of method that 370-380nm high brightness near ultraviolet LEDs are prepared using MOCVD technologies | |
| Lei et al. | A GaN-based LED with perpendicular structure fabricated on a ZnO substrate by MOCVD | |
| CN103579428A (en) | LED epitaxial wafer and preparing method thereof | |
| CN108899398B (en) | Preparation method of near ultraviolet LED with double-gradient quantum well structure | |
| CN108807622B (en) | One-dimensional InGaN/AlGaN multi-quantum well type ultraviolet LED and preparation method thereof | |
| CN102332510A (en) | Method for growing high-antistatic LED (light-emitting diode) by adopting metal organic compound vapor phase epitaxy technology | |
| CN109346580B (en) | Manufacturing method of light-emitting diode epitaxial wafer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |