CN107146832A - A kind of epitaxial wafer of light emitting diode and preparation method thereof - Google Patents
A kind of epitaxial wafer of light emitting diode and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000011777 magnesium Substances 0.000 claims abstract description 23
- 230000004888 barrier function Effects 0.000 claims abstract description 21
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 11
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract 14
- 238000010792 warming Methods 0.000 claims description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 239000010437 gem Substances 0.000 claims description 2
- 229910001751 gemstone Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 210
- 229910002601 GaN Inorganic materials 0.000 description 117
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 115
- 238000004519 manufacturing process Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 9
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000010276 construction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 206010054949 Metaplasia Diseases 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 230000015689 metaplastic ossification Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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Abstract
The invention discloses a kind of epitaxial wafer of light emitting diode and preparation method thereof, wherein epitaxial wafer includes：Substrate, it is formed at the low temperature GaN buffer on the substrate, it is formed at the GaN non-doped layers on the low temperature GaN buffer, it is formed at the N-type GaN layer on the GaN non-doped layers, it is formed at the SQW stress release layer in the N-type GaN layer, it is formed at InxGa (1 x) N/GaN active layers on the SQW stress release layer, it is formed at the p-type AlGaN layer on the InxGa (1 x) N/GaN active layers, it is formed at the p-type GaN layer for mixing magnesium in the p-type AlGaN layer；By adding SQW stress release layer, the crystalline quality of SQW is can effectively improve, makes the well layer of SQW and barrier layer interface apparent, precipitous, SQW is improved and electronics and hole constraint is acted on, so as to improve the luminous efficiency of LED chip.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of epitaxial wafer of light emitting diode and preparation method thereof.
Background technology
In recent years, InGaN/GaN MQWs (MQW) are used as blue green light and near ultraviolet scope light emitting diode active area
Research is increasingly goed deep into extensively.The thickness at doping, trap and base of people by optimizing the growth temperature, barrier layer of SQW etc. changes
InGaN/GaN quantum well radiation characteristics have been apt to it, due to excellent electrochemical properties, GaN base material is in microelectronic and photoelectricity
Subdomains are widely used.But with the demand of social development, people get over to the brightness requirement of GaN base light emitting
Come higher.
With reference to Fig. 1, the structure epitaxial growing method of existing light emitting diode is as follows：
Step 1, at 1000-1300 DEG C, it is blue that reaction cavity pressure maintains high-temperature process under 50-500torr hydrogen atmosphere
Jewel substrate a, is maintained 5-10 minutes；
Step 2, it is cooled at 550-650 DEG C, reaction cavity pressure maintains 100-500torr, raw in Sapphire Substrate 1
Long thickness is 10-40nm low temperature GaN buffer b；
Step 3, increase the temperature at 1000-1200 DEG C, reaction cavity pressure maintains 100-500torr, continued propagation 2-4
μm GaN undope a layer c；
Step 4, temperature control are at 1000-1200 DEG C, and reaction cavity pressure maintains 100-500torr, 2-4 μm of continued propagation
N-type GaN layer d, wherein Si doping concentrations be 5E+18-2E+19；
Step 5, cyclical growth 10-15 are to InxGa (1-x) N/GaN active layers e.Each the growth step in cycle is：Instead
Cavity pressure is answered to maintain 200-400torr, temperature control is at 700-750 DEG C, and growth thickness is 2.5-3.5nm InxGa (1-x)
N (x=0.015-0.25) well layer, In doping concentrations are 1E+20-5E+20；Then rise temperature is to 800-850 DEG C, and pressure is not
Become, growth thickness is 8-12nm GaN barrier layer；
Step 6, increase the temperature to 900-1000 DEG C again, reaction cavity pressure maintains 100-500torr, continued propagation 20-
60nm p-type AlGaN layer f, Al doping concentration 1E+20-3E+20, Mg doping concentration 5E+18-1E+19.
Step 7, increase the temperature to 930-950 DEG C again, reaction cavity pressure maintains 100-500torr, continued propagation 100-
300nm p-type GaN layer g, the Mg doping concentration 1E+19-1E+20 for mixing Mg.
Step 8, finally it is cooled to 700-800 DEG C, is incubated 20-30min, is then cooled down in stove.
However, using LED epitaxial slice made from the above method, the crystalline quality of SQW is low, i.e., well layer is to electricity
The constraint ability in son and hole is low.In addition, there can be trap builds the unsharp phenomenon in interface, cause well layer to electronics and the beam in hole
Tie up ability reduction, the In of well layer excessively be diffused into barrier layer, influence the luminous efficiency of SQW.
The content of the invention
In view of this, the invention provides a kind of epitaxial wafer of light emitting diode and preparation method thereof, existing skill is solved
The crystalline quality of SQW is low in art and trap builds the unsharp technical problem in interface.
On the one hand, the present invention provides a kind of LED epitaxial slice and preparation method thereof, including：
Substrate is provided；
Between 1000 DEG C to 1300 DEG C of keeping temperature, pressure 50torr between 500torr, institute is handled in a hydrogen atmosphere
State substrate 5min to 10min；
Between cooling to 550 DEG C to 650 DEG C, pressure 100torr between 500torr, growth thickness over the substrate
For 10nm to 40nm low temperature GaN buffer；
Between being warming up to 1000 DEG C to 1200 DEG C, pressure 100torr between 500torr, in the low temperature GaN buffer
Upper continued propagation thickness is 2 μm to 4 μm of GaN non-doped layers；
Between 1000 DEG C to 1200 DEG C of keeping temperature, pressure 100torr between 500torr, in the GaN non-doped layers
Upper continued propagation thickness is 2 μm to 4 μm of N-type GaN layer；
Temperature is reduced to 700 DEG C to 900 DEG C, and pressure 100torr grows between 500torr in the N-type GaN layer
Thickness is 100nm to 600nm SQW stress release layer, and the structure of the SQW stress release layer is：
NGaN individual layers, either InGaN/nGaN superlattices or InGaN/AlGaN superlattices, or InAlGaN/nGaN
Superlattices, or nGaN individual layers, InGaN/nGaN superlattices, InGaN/AlGaN superlattices and InAlGaN/nGaN superlattices
Any combination；Wherein nGaN Si doping concentrations are 0-2E19, and InGaN In concentration is 0-2E20, and AlGaN Al concentration is
0-2E20, superlattice period is 0-200；
10 to 15 couples of InxGa of cyclical growth (1-x) the N/GaN active layers on the SQW stress release layer；
Between being warming up to 900 DEG C to 1000 DEG C, pressure 100torr between 500torr, in the InxGa (1-x) N/
Continued propagation thickness is 20nm to 60nm p-type AlGaN layer on GaN active layers；
Maintain 930 DEG C to 950 DEG C of temperature between, pressure 100torr between 500torr, in the p-type AlGaN layer
Growth thickness is the p-type GaN layer that 100nm to 300nm mixes magnesium；
Cooled down after being cooled to 700 DEG C to 800 DEG C, insulation 20min to 30min.
Further, the Si of N-type GaN layer doping concentration is 5E+18-2E+19.
Further, on the SQW stress release layer cyclical growth 10 to 15 couples of InxGa (1-x) N/GaN
Active layer, including：
In each cycle, 700 DEG C to 750 DEG C of keeping temperature, pressure 200torr to 400torr, growth thickness is 2.5nm
To 3.5nm InxGa (1-x) N (x=0.015-0.25) well layer；
It is warming up to 800 DEG C to 850 DEG C, maintains pressure 200torr to 400torr, growth thickness is 8nm to 12nm GaN
Barrier layer.
Further, the In doping concentrations of InxGa (1-x) N (x=0.015-0.25) well layer are 1E+20-5E+20.
Further, the mg-doped concentration of described p-type AlGaN layer is 5E+18-1E+19, and aluminium doping concentration is 1E+20-
3E+20。
Further, the mg-doped concentration of the p-type GaN layer is 1E+19-1E+20.
On the other hand, the present invention also provides a kind of light emitting diode, including：
Substrate；
The low temperature GaN buffer on the substrate is formed at, the thickness of the low temperature GaN buffer is 10nm to 40nm；
The GaN non-doped layers on the low temperature GaN buffer are formed at, the thickness of the GaN non-doped layers is 2 μm to 4 μ
m；
The N-type GaN layer on the GaN non-doped layers is formed at, the thickness of the N-type GaN layer is 2 μm to 4 μm；
The SQW stress release layer in the N-type GaN layer is formed at, the thickness of the SQW stress release layer is
100nm to 600nm, the structure of the SQW stress release layer is：
NGaN individual layers, either InGaN/nGaN superlattices or InGaN/AlGaN superlattices, or InAlGaN/nGaN
Superlattices, or nGaN individual layers, InGaN/nGaN superlattices, InGaN/AlGaN superlattices and InAlGaN/nGaN superlattices
Any combination；Wherein nGaN Si doping concentrations are 0-2E19, and InGaN In concentration is 0-2E20, and AlGaN Al concentration is
0-2E20, superlattice period is 0-200；
It is formed at 10 to 15 couples of InxGa (1-x) N/GaN active layers on the SQW stress release layer；
The p-type AlGaN layer on the InxGa (1-x) N/GaN active layers is formed at, the thickness of the p-type AlGaN layer is
20nm to 60nm；
Be formed at the p-type GaN layer for mixing magnesium in the p-type AlGaN layer, the thickness of the p-type GaN layer for 100nm extremely
300nm。
Further, the substrate is Sapphire Substrate.
Further, InxGa (1-x) the N/GaN active layers include InxGa (1-x) N that thickness is 2.5nm to 3.5nm
(x=0.015-0.25) well layer and the GaN barrier layer that thickness is 8nm to 12nm.
Compared with prior art, epitaxial wafer of a kind of light emitting diode that the present invention is provided and preparation method thereof, is at least wrapped
Include following beneficial effect：
(1) SQW is improved by inserting stress release layer between N-type GaN layer and InxGa (1-x) N/GaN active layers
Crystalline quality the trap of SQW is built interface apparent, precipitous, SQW is improved to the constraint of electron hole effect to change
The photoelectric parameter of kind LED chip；
(2) nGaN individual layers are selected, either InGaN/nGaN superlattices or InGaN/AlGaN superlattices, or
InAlGaN/nGaN superlattices, or nGaN individual layers, InGaN/nGaN superlattices, InGaN/AlGaN superlattices and
Any combination of InAlGaN/nGaN superlattices is used as the material of stress release layer, electron mobility height, heat endurance and thermal conductivity
Rate is good, and doping techniques are simple, it is easy to operate；
(3) preparation method of LED epitaxial slice of the invention provides the preferred thickness range of each layer of epitaxial wafer,
In this thickness range, growth course is moderate and does not cause the waste of material, effectively improves production efficiency, saves production material；
(4) light emitting diode construction that provides of the present invention is simple, effectively save technological process, convenient for production, it is adaptable to work
Industry metaplasia is produced.
Certainly, implement the present invention any product must not specific needs simultaneously reach all the above technique effect.
By referring to the drawings to the detailed description of the exemplary embodiment of the present invention, further feature of the invention and its
Advantage will be made apparent from.
Brief description of the drawings
The accompanying drawing for being combined in the description and constituting a part for specification shows embodiments of the invention, and even
It is used for the principle for explaining the present invention together with its explanation.
Fig. 1 is LED epitaxial layer structures schematic diagram in the prior art.
A kind of flow chart of embodiment of preparation method for the LED epitaxial slice that Fig. 2 provides for the present invention.
A kind of structural representation of embodiment of LED epitaxial slice that Fig. 3 provides for the present invention.
Fig. 4 for the XRD of light emitting diode and light emitting diode provided in an embodiment of the present invention in the prior art, (spread out by X-ray
Penetrate instrument) comparison diagram；
PL (luminescence generated by light instrument) wavelength for the epitaxial wafer that Fig. 5 obtains for epitaxial wafer in the prior art and various embodiments of the present invention
Curve comparison figure.
PL (luminescence generated by light instrument) wavelength for the epitaxial wafer that Fig. 6 obtains for epitaxial wafer in the prior art and various embodiments of the present invention
Peak curve comparison diagram.
Embodiment
The various exemplary embodiments of the present invention are described in detail now with reference to accompanying drawing.It should be noted that：Unless had in addition
Body illustrates that the part and the positioned opposite of step, numerical expression and numerical value otherwise illustrated in these embodiments does not limit this
The scope of invention.
The description only actually at least one exemplary embodiment is illustrative below, never as to the present invention
And its any limitation applied or used.
It may be not discussed in detail for technology, method and apparatus known to person of ordinary skill in the relevant, but suitable
In the case of, the technology, method and apparatus should be considered as a part for specification.
In shown here and discussion all examples, any occurrence should be construed as merely exemplary, without
It is as limitation.Therefore, other examples of exemplary embodiment can have different values.
It should be noted that：Similar label and letter represents similar terms in following accompanying drawing, therefore, once a certain Xiang Yi
It is defined, then it need not be further discussed in subsequent accompanying drawing in individual accompanying drawing.
Embodiment 1
Referring to figs. 2 and 3, the present embodiment provides a kind of preparation method of LED epitaxial slice, including：
There is provided substrate 1 by step S101；
Between step S102,1000 DEG C to 1300 DEG C of keeping temperature, pressure 50torr between 500torr, in hydrogen gas
Substrate 5min to 10min is handled under atmosphere；
Step S103, between cooling to 550 DEG C to 650 DEG C, pressure 100torr between 500torr, give birth on substrate 1
Long thickness is 10nm to 40nm low temperature GaN (gallium nitride) cushion 2；
Step S104, between being warming up to 1000 DEG C to 1200 DEG C, pressure 100torr between 500torr, in low temperature GaN
Continued propagation thickness is 2 μm to 4 μm of GaN non-doped layers 3 on cushion 2；
Between step S105,1000 DEG C to 1200 DEG C of keeping temperature, pressure 100torr between 500torr, described
Continued propagation thickness is 2 μm to 4 μm of N-type GaN layer 4 on GaN non-doped layers 3；
Step S106, temperature is reduced to 700 DEG C to 900 DEG C, and pressure 100torr is between 500torr, in N-type GaN layer 4
Upper growth thickness is 100nm to 600nm SQW stress release layer 8, and the structure of SQW stress release layer 8 is：
NGaN (n-type gallium nitride) individual layer, either InGaN/nGaN (indium gallium nitride/n-type gallium nitride) superlattices or
InGaN/AlGaN (indium gallium nitride/aluminum gallium nitride) superlattices, or InAlGaN/nGaN (aluminium gallium nitrogen/n-type gallium nitride) are super brilliant
Lattice, or nGaN individual layers, InGaN/nGaN superlattices, InGaN/AlGaN superlattices and InAlGaN/nGaN superlattices are appointed
Meaning combination；Wherein nGaN Si doping concentrations are 0-2E19, and InGaN In concentration is 0-2E20, and AlGaN Al concentration is 0-
2E20, superlattice period is 0-200；
Step S107,10 to 15 couples of InxGa of cyclical growth (1-x) the N/GaN active layers on SQW stress release layer 8
5；
Step S108, between being warming up to 900 DEG C to 1000 DEG C, pressure 100torr between 500torr, in the InxGa
Continued propagation thickness is 20nm to 60nm p-type AlGaN (aluminum gallium nitride) layer 6 on (1-x) N/GaN active layers 5；
Step S109, maintain 930 DEG C to 950 DEG C of temperature between, pressure 100torr between 500torr, in the p-type
Growth thickness is the p-type GaN layer 7 that 100nm to 300nm mixes magnesium in AlGaN layer 6；
Step S110, is cooled down after being cooled to 700 DEG C to 800 DEG C, insulation 20min to 30min.
As a preferred embodiment, the Si of N-type GaN layer 4 doping concentration is 5E+18-2E+19.
As a preferred embodiment, on SQW stress release layer 8 cyclical growth 10 to 15 couples of InxGa
(1-x) N/GaN active layers 5, including：
In each cycle, 700 DEG C to 750 DEG C of keeping temperature, pressure 200torr to 400torr, growth thickness is 2.5nm
To 3.5nm InxGa(1-x)N (x=0.015-0.25) well layer；
It is warming up to 800 DEG C to 850 DEG C, maintains pressure 200torr to 400torr, growth thickness is 8nm to 12nm GaN
Barrier layer.
As a preferred embodiment, the InxGa(1-x)The In doping concentrations of N (x=0.015-0.25) well layer are
1E+20-5E+20。
As a preferred embodiment, the mg-doped concentration of p-type AlGaN layer 6 is 5E+18-1E+19, Al doping is dense
Spend for 1E+20-3E+20.
As a preferred embodiment, the Mg doping concentrations of p-type GaN layer 7 are 1E+19-1E+20.
The preparation method for the LED epitaxial slice that the present embodiment is provided, by adding SQW stress release layer, energy
The crystalline quality of SQW is effectively improved, makes the well layer of SQW and barrier layer interface apparent, precipitous, SQW is improved to electronics
Acted on hole constraint, so as to improve the luminous efficiency of LED chip.
Embodiment 2
With reference to Fig. 3, the present embodiment provides a kind of epitaxial wafer preparation method of light emitting diode, including：
There is provided substrate 1 by step S201；
Preferably, substrate 1 is Sapphire Substrate；
Step S202,1100 DEG C of keeping temperature, the pressure of reaction chamber maintains 500torr, in a hydrogen atmosphere processing lining
Bottom 6 minutes；
Step S203, is cooled to 550 DEG C, the pressure of reaction chamber maintains 500torr, and growth thickness is on substrate 1
20nm low temperature GaN buffer 2；
Step S204, is warming up to 1100 DEG C, the pressure of reaction chamber maintains 200torr, is persistently given birth on low temperature buffer layer 2
Long thickness is 3 μm of GaN non-doped layers 3；
Step S205,1100 DEG C of keeping temperature, the pressure of reaction chamber maintains 200torr, is held on GaN non-doped layers 3
Continuous growth thickness is 4 μm of N-type GaN layer 4, and wherein Si doping concentrations are 1E+19；
Step S206, temperature is reduced to 800 DEG C, and the pressure of reaction chamber maintains 200torr, is grown in N-type GaN layer 4
Thickness is 450nm SQW stress release layer 8, and the Rotating fields are nGaN individual layers, and wherein nGaN Si doping concentrations are 5E17；
Step S207, cyclical growth 12 is to InxGa (1-x) N/GaN active layers 5 on SQW stress release layer 8；
Each the growth step in cycle is：The pressure of reaction chamber maintains 300torr, and temperature control is at 750 DEG C, and growth is thick
InxGa (1-x) N (x=0.015) well layer for 3.0nm is spent, In doping concentrations are 3E+20；Then rise temperature is to 820 DEG C, pressure
Power is constant, and growth thickness is 12nm GaN barrier layer；
Step S208, then increase the temperature to 900 DEG C, reaction cavity pressure maintains 100torr, in InxGa (1-x) N/GaN
Continued propagation thickness is 40nm p-type AlGaN layer 6, wherein Al doping concentrations 2E+20, Mg doping concentrations 5E+18 on active layer 5；
Step S209, maintains 950 DEG C of temperature, reaction cavity pressure maintains 200torr, in the growth thickness of p-type AlGaN layer 6
For the 200nm p-type GaN layer 7 for mixing magnesium, wherein Mg doping concentrations 5E+19；
Step S210, is cooled to 750 DEG C, is incubated 30 minutes, is then cooled down in stove.
The preparation method for the LED epitaxial slice that the present embodiment is provided, adds SQW stress release layer, the quantum
Trap stress release layer is nGaN single layer structures, and manufacture craft is simple, and production cost is low, can effectively improve the crystalline of SQW
Amount, makes the well layer of SQW and barrier layer interface apparent, precipitous, improves SQW and electronics and hole constraint are acted on, so as to carry
The high luminous efficiency of LED chip.
Embodiment 3
With reference to Fig. 3, the present embodiment provides a kind of epitaxial wafer preparation method of light emitting diode, including：
There is provided substrate 1 by step S301；
Preferably, substrate 1 is Sapphire Substrate；
Step S302,1100 DEG C of keeping temperature, the pressure of reaction chamber maintains 500torr, in a hydrogen atmosphere processing lining
Bottom 6 minutes；
Step S303, is cooled to 550 DEG C, the pressure of reaction chamber maintains 500torr, and growth thickness is on substrate 1
20nm low temperature GaN buffer 2；
Step S304, is warming up to 1100 DEG C, the pressure of reaction chamber maintains 200torr, is persistently given birth on low temperature buffer layer 2
Long thickness is 3 μm of GaN non-doped layers 3；
Step S305,1100 DEG C of keeping temperature, the pressure of reaction chamber maintains 200torr, is held on GaN non-doped layers 3
Continuous growth thickness is 4 μm of N-type GaN layer 4, and wherein Si doping concentrations are 1E+19；
Step S306, temperature is reduced to 800 DEG C, and the pressure of reaction chamber maintains 200torr, is grown in N-type GaN layer 4
Thickness is 450nm SQW stress release layer 8, and the Rotating fields are InGaN/nGaN superlattice structures, and wherein nGaN Si mixes
Miscellaneous concentration is 5E17, and In concentration is 5E19, and InGaN/nGaN thickness ratio is 5nm/40nm, and periodicity is 10；
Step S307, cyclical growth 12 is to InxGa (1-x) N/GaN active layers 5 on SQW stress release layer 8；
Each the growth step in cycle is：The pressure of reaction chamber maintains 300torr, and temperature control is at 750 DEG C, and growth is thick
InxGa (1-x) N (x=0.015) well layer for 3.0nm is spent, In doping concentrations are 3E+20；Then rise temperature is to 820 DEG C, pressure
Power is constant, and growth thickness is 12nm GaN barrier layer；
Step S308, then increase the temperature to 900 DEG C, reaction cavity pressure maintains 100torr, in InxGa (1-x) N/GaN
Continued propagation thickness is 40nm p-type AlGaN layer 6, wherein Al doping concentrations 2E+20, Mg doping concentrations 5E+18 on active layer 5；
Step S309, maintains 950 DEG C of temperature, reaction cavity pressure maintains 200torr, in the growth thickness of p-type AlGaN layer 6
For the 200nm p-type GaN layer 7 for mixing magnesium, wherein Mg doping concentrations 5E+19；
Step S310, is cooled to 750 DEG C, is incubated 30 minutes, is then cooled down in stove.
The preparation method for the LED epitaxial slice that the present embodiment is provided, adds SQW stress release layer, the quantum
Trap stress release layer is InGaN/nGaN superlattice structures, further improves the crystalline quality of SQW, makes the well layer of SQW
It is apparent, precipitous with barrier layer interface, improve SQW and electronics and hole constraint are acted on, so as to improve the luminous of LED chip
Efficiency.
Embodiment 4
With reference to Fig. 3, the present embodiment provides a kind of epitaxial wafer preparation method of light emitting diode, including：
There is provided substrate 1 by step S401；
Preferably, substrate 1 is Sapphire Substrate；
Step S402,1100 DEG C of keeping temperature, the pressure of reaction chamber maintains 500torr, in a hydrogen atmosphere processing lining
Bottom 6 minutes；
Step S403, is cooled to 550 DEG C, the pressure of reaction chamber maintains 500torr, and growth thickness is on substrate 1
20nm low temperature GaN buffer 2；
Step S404, is warming up to 1100 DEG C, the pressure of reaction chamber maintains 200torr, is persistently given birth on low temperature buffer layer 2
Long thickness is 3 μm of GaN non-doped layers 3；
Step S405,1100 DEG C of keeping temperature, the pressure of reaction chamber maintains 200torr, is held on GaN non-doped layers 3
Continuous growth thickness is 4 μm of N-type GaN layer 4, and wherein Si doping concentrations are 1E+19；
Step S406, temperature is reduced to 800 DEG C, and the pressure of reaction chamber maintains 200torr, is grown in N-type GaN layer 4
Thickness be 450nm SQW stress release layer 8, the Rotating fields by 300nm nGaN individual layers and 150nm InGaN/AlGaN
Superlattice structure is constituted, and wherein nGaN Si doping concentrations are 5E17, and In concentration is 5E19, and Al concentration is 5E19,
InGaN/AlGaN thickness ratio is 1.5nm/1.5nm, and periodicity is 50；
Step S407, cyclical growth 12 is to InxGa (1-x) N/GaN active layers 5 on SQW stress release layer 8；
Each the growth step in cycle is：The pressure of reaction chamber maintains 300torr, and temperature control is at 750 DEG C, and growth is thick
InxGa (1-x) N (x=0.015) well layer for 3.0nm is spent, In doping concentrations are 3E+20；Then rise temperature is to 820 DEG C, pressure
Power is constant, and growth thickness is 12nm GaN barrier layer；
Step S408, then increase the temperature to 900 DEG C, reaction cavity pressure maintains 100torr, in InxGa (1-x) N/GaN
Continued propagation thickness is 40nm p-type AlGaN layer 6, wherein Al doping concentrations 2E+20, Mg doping concentrations 5E+18 on active layer 5；
Step S409, maintains 950 DEG C of temperature, reaction cavity pressure maintains 200torr, in the growth thickness of p-type AlGaN layer 6
For the 200nm p-type GaN layer 7 for mixing magnesium, wherein Mg doping concentrations 5E+19；
Step S410, is cooled to 750 DEG C, is incubated 30 minutes, is then cooled down in stove.
The preparation method for the LED epitaxial slice that the present embodiment is provided, adds SQW stress release layer, the quantum
Trap stress release layer is made up of 300nm nGaN individual layers and 150nm InGaN/AlGaN superlattice structures, further improvement amount
The crystalline quality of sub- trap, makes the well layer of SQW and barrier layer interface apparent, precipitous, improves SQW and electronics and hole are fettered
Effect, so as to improve the luminous efficiency of LED chip.
Embodiment 5
With reference to Fig. 3, the present embodiment provides a kind of epitaxial wafer preparation method of light emitting diode, including：
There is provided substrate 1 by step S501；
Preferably, substrate 1 is Sapphire Substrate；
Step S502,1100 DEG C of keeping temperature, the pressure of reaction chamber maintains 500torr, in a hydrogen atmosphere processing lining
Bottom 6 minutes；
Step S503, is cooled to 550 DEG C, the pressure of reaction chamber maintains 500torr, and growth thickness is on substrate 1
20nm low temperature GaN buffer 2；
Step S504, is warming up to 1100 DEG C, the pressure of reaction chamber maintains 200torr, is persistently given birth on low temperature buffer layer 2
Long thickness is 3 μm of GaN non-doped layers 3；
Step S505,1100 DEG C of keeping temperature, the pressure of reaction chamber maintains 200torr, is held on GaN non-doped layers 3
Continuous growth thickness is 4 μm of N-type GaN layer 4, and wherein Si doping concentrations are 1E+19；
Step S506, temperature is reduced to 800 DEG C, and the pressure of reaction chamber maintains 200torr, is grown in N-type GaN layer 4
Thickness is 450nm SQW stress release layer 8, and the Rotating fields are by 200nm nGaN individual layers, 200nm InAlGaN/nGaN
Superlattice structure and 50nm nGaN individual layers composition, nGaN Si doping concentrations are 5E17, and In concentration is 5E19, Al concentration
For 5E19, InAlGaN/nGaN thickness ratio is 5nm/45nm, and periodicity is 4；
Step S507, cyclical growth 12 is to InxGa (1-x) N/GaN active layers 5 on SQW stress release layer 8；
Each the growth step in cycle is：The pressure of reaction chamber maintains 300torr, and temperature control is at 750 DEG C, and growth is thick
InxGa (1-x) N (x=0.015) well layer for 3.0nm is spent, In doping concentrations are 3E+20；Then rise temperature is to 820 DEG C, pressure
Power is constant, and growth thickness is 12nm GaN barrier layer；
Step S508, then increase the temperature to 900 DEG C, reaction cavity pressure maintains 100torr, in InxGa (1-x) N/GaN
Continued propagation thickness is 40nm p-type AlGaN layer 6, wherein Al doping concentrations 2E+20, Mg doping concentrations 5E+18 on active layer 5；
Step S509, maintains 950 DEG C of temperature, reaction cavity pressure maintains 200torr, in the growth thickness of p-type AlGaN layer 6
For the 200nm p-type GaN layer 7 for mixing magnesium, wherein Mg doping concentrations 5E+19；
Step S510, is cooled to 750 DEG C, is incubated 30 minutes, is then cooled down in stove.
The preparation method for the LED epitaxial slice that the present embodiment is provided, adds SQW stress release layer, the quantum
Trap stress release layer by 200nm nGaN individual layers, 200nm InAlGaN/nGaN superlattice structures and 50nm nGaN individual layer groups
Into, further improve the crystalline quality of SQW, make the well layer of SQW and barrier layer interface apparent, precipitous, raising SQW
Electronics and hole constraint are acted on, so as to improve the luminous efficiency of LED chip.
Embodiment 6
With reference to Fig. 3, the present embodiment proposes a kind of light emitting diode, including：
Substrate 1；
The low temperature GaN buffer 2 on substrate 1 is formed at, the thickness of low temperature GaN buffer 2 is 10nm to 40nm；
The GaN non-doped layers 3 on low temperature GaN buffer 2 are formed at, the thickness of GaN non-doped layers 3 is 2 μm to 4 μm；
The N-type GaN layer 4 on GaN non-doped layers 3 is formed at, the thickness of N-type GaN layer 4 is 2 μm to 4 μm；
Be formed at the SQW stress release layer 8 in N-type GaN layer 4, the thickness of SQW stress release layer 8 for 100nm extremely
600nm, the structure of SQW stress release layer 8 is：
NGaN individual layers, either InGaN/nGaN superlattices or InGaN/AlGaN superlattices, or InAlGaN/nGaN
Superlattices, or nGaN individual layers, InGaN/nGaN superlattices, InGaN/AlGaN superlattices and InAlGaN/nGaN superlattices
Any combination；Wherein nGaN Si doping concentrations are 0-2E19, and InGaN In concentration is 0 to 2E20, AlGaN Al concentration
For 0-2E20, superlattice period is 0-200；
It is formed at 10 to 15 couples of InxGa (1-x) N/GaN active layers 5 on SQW stress release layer 8；
Be formed at the p-type AlGaN layer 6 on InxGa (1-x) N/GaN active layers 5, the thickness of p-type AlGaN layer 6 for 20nm extremely
60nm；
The p-type GaN layer 7 for mixing magnesium in p-type AlGaN layer 6 is formed at, the thickness of p-type GaN layer 7 is 100nm to 300nm.
As a preferred embodiment, substrate 1 is Sapphire Substrate.
As a preferred embodiment, InxGa (1-x) N/GaN active layers 5 include thickness be 2.5nm to 3.5nm's
InxGa(1-x)N (x=0.015-0.25) well layer and the GaN barrier layer that thickness is 8nm to 12nm.
The light emitting diode that the implementation case is provided, has the advantages that：
By introducing SQW stress release layer, the crystalline quality and well layer of SQW are effectively improved to electronics and sky
The constraint ability in cave, therefore the photoelectric efficiency of light emitting diode is significantly improved；
The In of InxGa (1-x) N/GaN active layers 5xGa(1-x)N (x=0.015-0.25) well layer thickness be 2.5nm extremely
The thickness of 3.5nm, GaN barrier layer is 8nm to 12nm.In this thickness range, growth course is moderate and does not cause the waste of material,
Production efficiency is effectively improved, production material is saved；
Simple in construction, effectively save technological process, it is convenient for production, it is adaptable to industrialized production.
With reference to Fig. 4, curve A is the XRD diffraction curves of existing epitaxial slice structure in figure, and curve B should to add SQW
The XRD diffraction curves of the epitaxial slice structure of power releasing layer, curve B main peak is substantially higher in curve A main peak；The one of curve B
Level satellites are 1., the height of two grades of satellites 2. is also apparently higher than curve A satellite peak heights.
Demonstrated by contrast after insertion SQW stress release layer, the InGaN/GaN SQW crystalline qualities of LED extensions
It is significantly improved.
The epitaxial wafer XRD diffraction curves of the preferred embodiment of the present invention have apparent and precipitous main peak and I and II satellite
Peak curve.The trap base interface for demonstrating SQW after insertion SQW stress release layer is apparent, is conducive to the In of well layer will not
Excessive is diffused into barrier layer to improve the luminous efficiency of SQW.
With reference to Fig. 5, curve A is prior art epitaxial wafer wavelength, and curve B is the epitaxial wafer wavelength that embodiment 2 is obtained, curve
C is the epitaxial wafer wavelength that embodiment 3 is obtained, and curve D is the wavelength that embodiment 4 is obtained, and curve E is the wavelength that embodiment 5 is obtained,
A, B, C, D, E wavelength curve form are essentially identical, it was demonstrated that the introducing of stress release layer will not be caused to LED luminescence mechanism
Essence changes.
With reference to Fig. 6, embodiments of the invention 2,3,4,5 epitaxial wafer corresponding wavelength curve B, C, D, E provided PL wavelength
Peak strength is distributed in 23.4 to 23.7, and the peak strength (21.2) than traditional structure epitaxial wafer wavelength curve A is high by 2.2 to 2.5,
Improve 10% or so.
Demonstrated by contrast after introducing SQW stress release layer, the crystalline quality of SQW is lifted well,
I.e. well layer is improved to the constraint ability in electronics and hole.
Compared with prior art, epitaxial wafer of light emitting diode of the invention and preparation method thereof, realizing following has
Beneficial effect：
(1) SQW is improved by inserting stress release layer between N-type GaN layer and InxGa (1-x) N/GaN active layers
Crystalline quality the trap of SQW is built interface apparent, precipitous, SQW is improved to the constraint of electron hole effect to change
The photoelectric parameter of kind LED chip；
(2) nGaN individual layers are selected, either InGaN/nGaN superlattices or InGaN/AlGaN superlattices, or
InAlGaN/nGaN superlattices, or nGaN individual layers, InGaN/nGaN superlattices, InGaN/AlGaN superlattices and
Any combination of InAlGaN/nGaN superlattices is used as the material of stress release layer, electron mobility height, heat endurance and thermal conductivity
Rate is good, and doping techniques are simple, it is easy to operate；
(3) preparation method of LED epitaxial slice of the invention provides the preferred thickness range of each layer of epitaxial wafer,
In this thickness range, growth course is moderate and does not cause the waste of material, effectively improves production efficiency, saves production material；
(4) light emitting diode construction that provides of the present invention is simple, effectively save technological process, convenient for production, it is adaptable to work
Industry metaplasia is produced.
Although some specific embodiments of the present invention are described in detail by example, the skill of this area
Art personnel are it should be understood that example above is merely to illustrate, the scope being not intended to be limiting of the invention.The skill of this area
Art personnel to above example it should be understood that can modify without departing from the scope and spirit of the present invention.This hair
Bright scope is defined by the following claims.
Claims (9)
1. a kind of preparation method of LED epitaxial slice, it is characterised in that including：
Substrate is provided；
Between 1000 DEG C to 1300 DEG C of keeping temperature, pressure 50torr between 500torr, the lining is handled in a hydrogen atmosphere
Bottom 5min to 10min；
Between cooling to 550 DEG C to 650 DEG C, pressure 100torr between 500torr, growth thickness is over the substrate
10nm to 40nm low temperature GaN buffer；
Between being warming up to 1000 DEG C to 1200 DEG C, pressure 100torr between 500torr, held on the low temperature GaN buffer
Continuous growth thickness is 2 μm to 4 μm of GaN non-doped layers；
Between 1000 DEG C to 1200 DEG C of keeping temperature, pressure 100torr between 500torr, held on the GaN non-doped layers
Continuous growth thickness is 2 μm to 4 μm of N-type GaN layer；
Temperature is reduced to 700 DEG C to 900 DEG C, and pressure 100torr is between 500torr, the growth thickness in the N-type GaN layer
For 100nm to 600nm SQW stress release layer, the structure of the SQW stress release layer is：
NGaN individual layers, either InGaN/nGaN superlattices or InGaN/AlGaN superlattices, or InAlGaN/nGaN are super brilliant
Lattice, or nGaN individual layers, InGaN/nGaN superlattices, InGaN/AlGaN superlattices and InAlGaN/nGaN superlattices are appointed
Meaning combination；Wherein nGaN Si doping concentrations are 0-2E19, and InGaN In concentration is 0-2E20, and AlGaN Al concentration is 0-
2E20, superlattice period is 0-200；
10 to 15 couples of InxGa of cyclical growth (1-x) the N/GaN active layers on the SQW stress release layer；
Between being warming up to 900 DEG C to 1000 DEG C, pressure 100torr between 500torr, have in the InxGa (1-x) N/GaN
Continued propagation thickness is 20nm to 60nm p-type AlGaN layer in active layer；
Maintain between 930 DEG C to 950 DEG C of temperature, pressure 100torr between 500torr, grown in the p-type AlGaN layer
Thickness is the p-type GaN layer that 100nm to 300nm mixes magnesium；
Cooled down after being cooled to 700 DEG C to 800 DEG C, insulation 20min to 30min.
2. the preparation method of LED epitaxial slice according to claim 1, it is characterised in that the N-type GaN layer
Si doping concentration is 5E+18-2E+19.
3. the preparation method of LED epitaxial slice according to claim 1, it is characterised in that should in the SQW
10 to 15 couples of InxGa of cyclical growth (1-x) N/GaN active layers on power releasing layer, including：
In each cycle, 700 DEG C to 750 DEG C of keeping temperature, pressure 200torr to 400torr, growth thickness be 2.5nm extremely
3.5nm InxGa(1-x)N (x=0.015-0.25) well layer；
It is warming up to 800 DEG C to 850 DEG C, maintains pressure 200torr to 400torr, growth thickness is 8nm to 12nm GaN barrier layer.
4. the preparation method of LED epitaxial slice according to claim 3, it is characterised in that the InxGa(1-x)N
(x=0.015-0.25) the In doping concentrations of well layer are 1E+20-5E+20.
5. the preparation method of LED epitaxial slice according to claim 1, it is characterised in that described p-type AlGaN
The mg-doped concentration of layer is 5E+18-1E+19, and aluminium doping concentration is 1E+20-3E+20.
6. the preparation method of LED epitaxial slice according to claim 1, it is characterised in that the p-type GaN layer
Mg-doped concentration is 1E+19-1E+20.
7. a kind of light emitting diode, it is characterised in that including：
Substrate；
The low temperature GaN buffer on the substrate is formed at, the thickness of the low temperature GaN buffer is 10nm to 40nm；
The GaN non-doped layers on the low temperature GaN buffer are formed at, the thickness of the GaN non-doped layers is 2 μm to 4 μm；
The N-type GaN layer on the GaN non-doped layers is formed at, the thickness of the N-type GaN layer is 2 μm to 4 μm；
The SQW stress release layer in the N-type GaN layer is formed at, the thickness of the SQW stress release layer is 100nm
To 600nm, the structure of the SQW stress release layer is：
NGaN individual layers, either InGaN/nGaN superlattices or InGaN/AlGaN superlattices, or InAlGaN/nGaN are super brilliant
Lattice, or nGaN individual layers, InGaN/nGaN superlattices, InGaN/AlGaN superlattices and InAlGaN/nGaN superlattices are appointed
Meaning combination；Wherein nGaN Si doping concentrations are 0-2E19, and InGaN In concentration is 0 to 2E20, and AlGaN Al concentration is 0-
2E20, superlattice period is 0-200；
It is formed at 10 to 15 couples of InxGa (1-x) N/GaN active layers on the SQW stress release layer；
The p-type AlGaN layer on the InxGa (1-x) N/GaN active layers is formed at, the thickness of the p-type AlGaN layer is 20nm
To 60nm；
The p-type GaN layer for mixing magnesium in the p-type AlGaN layer is formed at, the thickness of the p-type GaN layer is 100nm to 300nm.
8. the preparation method of LED epitaxial slice according to claim 7, it is characterised in that the substrate is blue precious
Stone lining bottom.
9. light emitting diode according to claim 7, it is characterised in that InxGa (1-x) the N/GaN active layers include
Thickness is 2.5nm to 3.5nm InxGa(1-x)N (x=0.015-0.25) well layer and the GaN barrier layer that thickness is 8nm to 12nm.
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| CN108447952A (en) * | 2018-03-26 | 2018-08-24 | 华灿光电（浙江）有限公司 | A kind of LED epitaxial slice and preparation method thereof |
| CN109256444A (en) * | 2018-07-25 | 2019-01-22 | 华灿光电（浙江）有限公司 | A kind of epitaxial wafer of light emitting diode and preparation method thereof |
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| CN110571316A (en) * | 2019-09-11 | 2019-12-13 | 合肥彩虹蓝光科技有限公司 | Light-emitting diode structure and preparation method thereof |
| CN111430517A (en) * | 2020-03-26 | 2020-07-17 | 江苏南大光电材料股份有限公司 | High-brightness light-emitting diode epitaxial wafer and preparation method thereof |
| CN116544327A (en) * | 2023-06-27 | 2023-08-04 | 江西兆驰半导体有限公司 | Light-emitting diode and preparation method thereof |
| CN116544327B (en) * | 2023-06-27 | 2023-11-17 | 江西兆驰半导体有限公司 | Light-emitting diode and preparation method thereof |
| CN116914046A (en) * | 2023-09-12 | 2023-10-20 | 江西兆驰半导体有限公司 | Light-emitting diode epitaxial wafer and preparation method thereof |
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