CN104485404A - High-brightness near-ultraviolet LED and epitaxial growth method thereof - Google Patents
High-brightness near-ultraviolet LED and epitaxial growth method thereof Download PDFInfo
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- 230000012010 growth Effects 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 3
- 239000010980 sapphire Substances 0.000 claims abstract description 3
- 239000012298 atmosphere Substances 0.000 claims description 27
- 239000001257 hydrogen Substances 0.000 claims description 20
- 229910052739 hydrogen Inorganic materials 0.000 claims description 20
- 230000004888 barrier function Effects 0.000 claims description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- 230000008859 change Effects 0.000 claims description 9
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 8
- 238000005036 potential barrier Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 2
- 238000005286 illumination Methods 0.000 abstract description 2
- 230000003139 buffering effect Effects 0.000 abstract 1
- 150000002431 hydrogen Chemical class 0.000 description 11
- 239000011777 magnesium Substances 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000008635 plant growth Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000005701 quantum confined stark effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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- Manufacturing & Machinery (AREA)
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- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a high-brightness near-ultraviolet LED and an epitaxial growth method of the high-brightness near-ultraviolet LED. The high-brightness near-ultraviolet LED structurally comprises a graphical sapphire substrate, a low-temperature GaN nucleating layer, a high-temperature non-doped GaN buffering layer, an n-type GaN layer, 10-20 cycles of n-Inx1Gal-x1N/Aly1Ga1-y1N superlattice stress release layers, an InxGal-xN/Aly1Ga1-yN multi-quantum-well active area, a low-temperature p type AlInGaN layer, a high-temperature p type GaN layer and a p type InGaN contact layer in sequence from bottom to top. The V-type defect density of the stress release layer can be effectively reduced along with the increase of the superlattice cycle number, the stress on quantum wells is relieved, and the illumination efficiency of the near-ultraviolet LED is effectively improved.
Description
Technical field
The present invention relates to field of semiconductor photoelectron technique, particularly relate to a kind of high brightness near ultraviolet LED adopting the preparation of MOCVD (Metal Organic Vapor extension) technology to have trap wide gradual change superlattice structure stress release layer.
Background technology
Ultraviolet semiconductor light source is mainly used in the aspects such as biologic medical, authentication, purification (water, air etc.) field, computer data storage and military affairs.Along with the progress of ultraviolet Technology, new application can constantly occur substituting original technology and product, and ultraviolet leds has wide market application foreground.Ultraviolet source will develop the aspect purposes such as general illumination, light tweezer, plant growth, petroleum pipeline leak detection, archaeology application, discriminating be true and false.Semiconductor ultraviolet source, as the another great industry direction after semiconductor lighting, has caused the extensive concern of semiconductor optoelectronic industry.The U.S., Japan, Korea S etc. drop into huge strength invariably in the hope of occupying the commanding elevation of industry.
At present, the matter of utmost importance that ultraviolet LED technology faces is that its light efficiency is low.The ultraviolet LED power output of wavelength 365nm is only the 5%-8% of input power.Ultraviolet LED electricity conversion for more than wavelength 385nm is significantly improved relative to short wavelength, but power output only has 15% of input power.The light efficiency of effective raising ultraviolet LED becomes the focus paid close attention in the industry, and to affect one of major reason of the efficiency of ultraviolet leds be the quantum confined Stark effect that stress causes, and therefore, modulation active area stress has important function to raising UV-light luminous efficiency.
Summary of the invention
The object of the present invention is to provide high brightness near ultraviolet light-emitting diode prepared by a kind of MOCVD of employing technology, by designing novel LED structure, modulation doping is adopted to have the wide n-InGaN/AlGaN superlattice structure of gradual change trap as stress release layer, effective alleviation active area stress, and improve horizontal direction current expansion, and then realize the object improving near ultraviolet LED luminous efficiency.
The invention provides a kind of high brightness near ultraviolet LED, as shown in Figure 1, being followed successively by of this LED epitaxial structure order from bottom to top: the n-In of graphical sapphire substrate 101, low temperature GaN nucleating layer 102, high temperature undoped GaN resilient coating 103, n-type GaN layer 104, the wide gradual change of trap
x1ga
1-x1n/Al
y1ga
1-y1n superlattice stress release layer 105, In
xga
1-xn/Al
yga
1-yn multiple quantum well active layer 106, p-Al
y2in
x2ga
1-x2-y2n electronic barrier layer 107, high temperature p-type GaN layer 108 and p-type InGaN contact layer 109, wherein, the wide gradual change n-In of trap
x1ga
1-x1n/Al
y1ga
1-y1the periodicity of N superlattice stress release layer 105 is 10 to 20, n-In
x1ga
1-x1n/Al
y1ga
1-y1potential well In in N superlattice stress release layer
x1ga
1-x1the thickness of N layer for become greater to 5.5nm from 1nm staged, potential barrier Al
y1ga
1-y1n layer thickness keeps fixed numbers constant, potential barrier Al
y1ga
1-y1n layer thickness scope is 2.5-3nm, In
xga
1-xn/Al
yga
1-ythe periodicity of N multiple quantum well active layer 106 is 5-10, n-In
x1ga
1-x1n/Al
y1ga
1-y1n superlattice stress release layer 105 and In
xga
1-xn/Al
yga
1-y0.01≤x in N multiple quantum well active layer 106
1≤ x≤0.1,0.01≤y
1≤ y≤0.1; P-Al
y2in
x2ga
1-x2-y2n electronic barrier layer 107 and In
xga
1-xn/Al
yga
1-y0.01≤x in N multiple quantum well active layer 106
2≤ x≤0.1; 0.01≤y
2≤ y≤0.1.
The invention provides the epitaxial growth method that a kind of MOCVD of employing technology prepares high brightness near ultraviolet LED, comprise the following steps:
Step one, by Al in Metal Organic Vapor epitaxial reactor
2o
3in a hydrogen atmosphere, chamber pressure 100torr at 1080 DEG C-1100 DEG C, processes 5-10 minute to substrate; Then reduce temperature, at 530-550 DEG C, chamber pressure 500torr, at hydrogen (H
2) under atmosphere, V/III mol ratio is 500-1300, the low temperature GaN nucleating layer of three dimensional growth 20-30 nanometer thickness;
Step 2, at 1000-1500 DEG C, chamber pressure is 200-300torr, at hydrogen (H
2) under atmosphere, V/III mol ratio is 1000-1300, growth 2-4 micron thickness high temperature undoped GaN resilient coating;
Step 3, at 1000-1500 DEG C, chamber pressure is 100-200torr, at hydrogen (H
2) under atmosphere, V/III mol ratio is 1000-1300, growth 2-4 micron thickness n-GaN layer, Si doping content is 10
18-10
19cm
-3;
Step 4, at 750-850 DEG C, at nitrogen (N
2) under atmosphere, V/III mol ratio is 5000-10000, chamber pressure 300torr, the N-shaped In of the wide gradual change of quantum well in 10 to 20 cycles of growth
x1ga
1-x1n/Al
y1ga
1-y1the N-shaped stress release layer of N superlattice structure, wherein along with the increase of superlattice period number, In wherein
x1ga
1-x1the thickness of N layer is from 1nm step variation to 5.5nm, and barrier layer Al
y1ga
1-y1n layer thickness keeps fixed numbers constant; The wherein In component x of stress release layer
1be less than active area In component x (0.01≤x1≤x≤0.1), Al component y
1be less than active area Al component y (0.01≤y
1≤ y≤0.1).Si doping content is greater than 10
18cm
-3;
Step 5, at 750-850 DEG C, at nitrogen (N
2) under atmosphere, V/III mol ratio is 5000-10000, chamber pressure 300torr, then grows 5-10 cycle In
xga
1-xn/Al
yga
1-yn multiple quantum well active layer; Wherein In
xga
1-xn quantum well layer thickness is 2-3nm, Al
yga
1-yn barrier layer thickness is 10-20nm, wherein 0<x≤0.1; 0<y≤0.1;
Step 6, at 780 DEG C-850 DEG C, on the active area, in a nitrogen atmosphere, V/III mol ratio is 5000-10000, chamber pressure 100-300torr, growth 20nm-40nm p-Al
y2in
x2ga
1-x2-y2n electronic barrier layer; Mg doping content is 10
17-10
18cm
-3, wherein In component x
2be less than active area In component x (0.01≤x
2≤ x≤0.1), Al component y
2be less than active area Al component y (0.01≤y
2≤ y≤0.1).
Step 7, at 950 DEG C-1050 DEG C, in a hydrogen atmosphere, V/III mol ratio is 2000-5000, chamber pressure 100torr, and growth 100nm-200nm p-GaN, Mg doping content is 10
17-10
18cm
-3.
Step 8, at 650 DEG C-750 DEG C, in a hydrogen atmosphere, V/III mol ratio is 5000-10000, chamber pressure 300torr, and growth 2nm-3nm p-type InGaN contact layer, Mg doping content is for being greater than 10
18cm
-3.
The present invention, by optimizing N-shaped stress release layer, can effectively reduce V-type defect concentration, alleviates the stress that quantum well is subject to; And In in superlattice stress release layer
x1ga
1-x1the thickness of N layer is from 1nm step variation to 5.5nm, Al
y1ga
1-y1n layer thickness (2.5-3nm) remains unchanged, and can improve horizontal direction current expansion, improves Carrier Injection Efficiency, and then effectively improves the luminous efficiency of near ultraviolet LED.
Accompanying drawing explanation
Fig. 1 is the sectional elevation view of high brightness near ultraviolet light-emitting diode of the present invention;
Fig. 2 adopts novel stress release layer near ultraviolet light-emitting diode UV-LED1 in the embodiment of the present invention 1, to adopt in the embodiment of the present invention 2 novel stress release layer near ultraviolet light-emitting diode UV-LED2 luminous power with Injection Current change curve.
Embodiment
Embodiment 1
Use Aixtron company, close coupling vertical reative cell MOCVD growing system.Use trimethyl gallium (TMGa) in growth course, trimethyl indium (TMIn), trimethyl aluminium (TMAl) as III source, ammonia (NH
3) as group V source, silane (SiH
4) as N-shaped doped source, two luxuriant magnesium (Cp
2mg) as p-type doped source, first in MOCVD reative cell by graphical Al
2o
3substrate 101 is heated to 1080-1100 degree Celsius, is 100torr, at H at chamber pressure
2lower process 5 minutes, then cools at 530-550 degree Celsius at graphical Al
2o
3on substrate, chamber pressure 500torr, under hydrogen (H2) atmosphere, V/III mol ratio is 500-1300, the low temperature GaN nucleating layer of three dimensional growth 20-30 nanometer thickness, and at 1000-1500 DEG C, chamber pressure is 200-300torr, at hydrogen (H
2) under atmosphere, V/III mol ratio is 1000-1300; Growth 2-4 micron thickness high temperature undoped GaN resilient coating; At 1000-1500 DEG C, chamber pressure is 100-200torr, at hydrogen (H
2) under atmosphere, V/III mol ratio is 1000-1300, growth 2-4 micron thickness n-GaN layer; Si doping content is 10
18-10
19cm
-3; At 750-850 DEG C, at nitrogen (N
2) under atmosphere, V/III mol ratio is 5000-10000, chamber pressure 300torr, the N-shaped In of the wide gradual change of quantum well in 10 cycles of growth
x1ga
1-x1n/Al
y1ga
1-y1the N-shaped stress release layer of N superlattice structure, the potential well layer In wherein in stress release layer
x1ga
1-x1the thickness of N is followed successively by along with the increase of superlattice period number: 1nm, 1.5nm, 2nm, 2.5nm, 3nm, 3.5nm, 4nm, 4.5nm, 5nm, 5.5nm, barrier layer Al
y1ga
1-y1n layer thickness is 2.5nm; The wherein In component x of stress release layer
1be less than active area In component x (0.01≤x
1≤ x≤0.1), Al component y
1be less than or equal to active area Al component y=0.05 (0.01≤y
1≤ y≤0.1).Si doping content is greater than 10
19cm
-3; At 750-850 DEG C, at nitrogen (N
2) under atmosphere, V/III mol ratio is 5000-10000, chamber pressure 300torr, then grows 5 cycle In
xga
1-xn/Al
yga
1-yn multiple quantum well active layer, wherein In
xga
1-xn quantum well layer thickness is 2nm; Al
yga
1-yn barrier layer thickness is 10nm, and x=0.05; Y=0.05; At 780 DEG C-850 DEG C, in a nitrogen atmosphere, V/III mol ratio is 5000-10000, chamber pressure 100-300torr, continued growth 20nm p-Al
y2in
x2ga
1-x2-y2n electronic barrier layer; x
2=0.05, y
2=0.05Mg doping content is 10
17-10
18cm
-3.At 950 DEG C-1050 DEG C, in a hydrogen atmosphere, V/III mol ratio is 2000-5000, chamber pressure 100torr, growth 100nmp-GaN.Mg doping content is 10
17-10
18cm
-3.At 650 DEG C-750 DEG C, in a nitrogen atmosphere, V/III mol ratio is 5000-10000, chamber pressure 300torr, growth 2nm p-InGaN.Mg doping content is for being greater than 10
18cm
-3.
Embodiment 2
Use Aixtron company, close coupling vertical reative cell MOCVD growing system.Use trimethyl gallium (TMGa) in growth course, trimethyl indium (TMIn), trimethyl aluminium (TMAl) as III source, ammonia (NH
3) as group V source, silane (SiH
4) as N-shaped doped source, two luxuriant magnesium (Cp
2mg) as p-type doped source, first in MOCVD reative cell by graphical Al
2o
3substrate 201 is heated to 1080-1100 degree Celsius, is 100torr, at H at chamber pressure
2lower process 5 minutes, then cools at 530-550 degree Celsius at graphical Al
2o
3on substrate, chamber pressure 500torr, under hydrogen (H2) atmosphere, V/III mol ratio is 500-1300, the low temperature GaN nucleating layer of three dimensional growth 20-30 nanometer thickness, and at 1000-1500 DEG C, chamber pressure is 200-300torr, at hydrogen (H
2) under atmosphere, V/III mol ratio is 1000-1300, growth 2-4 micron thickness high temperature u-GaN layer; At 1000-1500 DEG C, chamber pressure is 100-200torr, at hydrogen (H
2) under atmosphere, V/III mol ratio is 1000-1300, growth 2-4 micron thickness n-GaN layer 204, Si doping content is 10
18-10
19cm
-3; At 750-850 DEG C, at nitrogen (N
2) under atmosphere, V/III mol ratio is 5000-10000, chamber pressure 300torr, the N-shaped In of the wide gradual change of quantum well in 20 cycles of growth
x1ga
1-x1n/Al
y1ga
1-y1the N-shaped stress release layer of N superlattice structure, wherein stress release layer potential well In
x1ga
1-x1the thickness of N layer is followed successively by along with the increase of superlattice period number: 1nm, 1nm, 1.5nm, 1.5nm, 2nm, 2nm, 2.5nm, 2.5nm, 3nm, 3nm, 3.5nm, 3.5nm, 4nm, 4nm, 4.5nm, 4.5nm, 5nm, 5nm, 5.5nm, 5.5nm, potential barrier Al
y1ga
1-y1n layer thickness is 3nm; The wherein In component x of stress release layer
1be less than active area In component x (0.01≤x
1≤ x≤0.1), Al component y
1be less than or equal to active area Al component y=0.05 (0.01≤y
1≤ y≤0.1).Si doping content is greater than 10
19cm
-3; At 750-850 DEG C, at nitrogen (N
2) under atmosphere, V/III mol ratio is 5000-10000, chamber pressure 300torr, then grows 10 cycle In
xga
1-xn/Al
yga
1-yn multiple quantum well active layer, wherein In
xga
1-xn quantum well layer thickness is 3nm; Al
yga
1-ynl barrier layer thickness is 20nm; Wherein x=0.1; Y=0.1; At 780 DEG C-850 DEG C, on the active area, in a nitrogen atmosphere, V/III mol ratio is 5000-10000, chamber pressure 100-300torr, growth 40nmp-Al
y2in
x2ga
1-x2-y2n electronic barrier layer; x
2=0.05, y
2=0.1, Mg doping content is 10
17-10
18cm
-3.At 950 DEG C-1050 DEG C, in a hydrogen atmosphere, V/III mol ratio is 2000-5000, chamber pressure 100torr, growth 200nm p-GaN.Mg doping content is 10
17-10
18cm
-3.At 650 DEG C-750 DEG C, in a nitrogen atmosphere, V/III mol ratio is 5000-10000, chamber pressure 300torr, growth 3nm p-InGaN.Mg doping content is for being greater than 10
18cm
-3.
After epitaxial growth terminates, the temperature of reative cell is down to 700-750 DEG C, adopts pure nitrogen gas atmosphere to carry out annealing in process 5-20min, be then down to room temperature, terminate growth, epitaxial structure makes single 6mil × 8mil small-size chips after the conventional die techniques such as cleaning, deposition, photoetching and etching.Be illustrated in figure 2 the photoelectric property adopting the black light LED chip (UV-LED1, UV-LED2) that embodiment 1 and embodiment 2 technical scheme make in the present invention, the black light LED wherein adopting embodiment 2 technical scheme to make improves more than 20% relative to the black light LED light power adopting embodiment 1 technical scheme to make; Reason is that in embodiment 2 technical scheme, stress release layer better mates the design of active area quantum well and whole LED growth structure, therefore obtains higher electron-hole recombinations luminous efficiency
Above-described embodiment is only and technological thought of the present invention and feature is described, it describes comparatively concrete and detailed, its object is to enable those of ordinary skill in the art understand content of the present invention and implement according to this, therefore only the scope of the claims of the present invention can not be limited with this, but therefore limitation of the scope of the invention can not be interpreted as.It should be noted that, for the person of ordinary skill of the art, without departing from the inventive concept of the premise, some distortion and improvement can also be made, namely all changes done according to disclosed spirit, must be encompassed in the scope of the claims of the present invention.
Claims (9)
1. a high brightness near ultraviolet light-emitting diode, it is characterized in that, this LED epitaxial is stratiform overlaying structure, and material is from bottom to top followed successively by: graphical sapphire substrate, low temperature GaN nucleating layer, high temperature undoped GaN resilient coating, n-type GaN layer, n-In
x1ga
1-x1n/Al
y1ga
1-y1n superlattice stress release layer, In
xga
1-xn/Al
yga
1-yn multiple quantum well active layer, p-Al
y2in
x2ga
1-x2-y2n electronic barrier layer, high temperature p-type GaN layer and p-type InGaN contact layer, wherein, n-In
x1ga
1-x1n/Al
y1ga
1-y1the periodicity of N superlattice stress release layer is 10 to 20, along with the increase of superlattice period number, and n-In
x1ga
1-x1n/Al
y1ga
1-y1potential well In in N superlattice stress release layer
x1ga
1-x1the thickness step formula of N layer becomes large, potential barrier Al
y1ga
1-y1n layer thickness keeps fixed numbers constant, In
xga
1-xn/Al
yga
1-ythe periodicity of N multiple quantum well active layer is 5-10, n-In
x1ga
1-x1n/Al
y1ga
1-y1n superlattice stress release layer and In
xga
1-xn/Al
yga
1-y0.01≤x in N multiple quantum well active layer
1≤ x≤0.1,0.01≤y
1≤ y≤0.1; P-Al
y2in
x2ga
1-x2-y2n electronic barrier layer and In
xga
1-xn/Al
yga
1-y0.01≤x in N multiple quantum well active layer
2≤ x≤0.1; 0.01≤y
1≤ y≤0.1.
2. high brightness near ultraviolet light-emitting diode as claimed in claim 1, is characterized in that, potential well In
x1ga
1-x1the thickness of N layer for become greater to 5.5nm from 1nm staged, potential barrier Al
y1ga
1-y1the thickness range of N layer is 2.5-3nm.
3. high brightness near ultraviolet light-emitting diode as claimed in claim 1, it is characterized in that, n-type GaN layer thickness range is 2-4 micron, and doping Si, doping content is 10
18-10
19cm
-3.
4. high brightness near ultraviolet light-emitting diode as claimed in claim 1, is characterized in that, n-In
x1ga
1-x1n/Al
y1ga
1-y1n superlattice stress release layer doping Si, doping content is greater than 10
19cm
-3.
5. high brightness near ultraviolet light-emitting diode as claimed in claim 1, is characterized in that, In
xga
1-xn/Al
yga
1-yin in N multiple quantum well active layer
xga
1-xthe thickness range of N quantum well layer is 2-3nm; Al
yga
1-ythe thickness range of Nl barrier layer is 10-20nm.
6. light-emitting diode as claimed in claim 1, is characterized in that, p-Al
y2in
x2ga
1-x2-y2n electronic barrier layer thickness range is 20nm-40nm, doped with Mg, and doping content is 10
17-10
18cm
-3.
7. light-emitting diode as claimed in claim 1, it is characterized in that, high temperature p-type GaN layer thickness range is 100nm-200nm, doped with Mg, and doping content is 10
17-10
18cm
-3.
8. light-emitting diode as claimed in claim 1, it is characterized in that, p-type InGaN contact layer thickness range is 2nm-3nm, and doped with Mg, doping content is greater than 10
18cm
-3.
9. an epitaxial growth method for high brightness near ultraviolet light-emitting diode as claimed in claim 1, its step comprises:
1) in Metal Organic Vapor epitaxial reactor by Al
2o
3in a hydrogen atmosphere, chamber pressure 100torr at 1080 DEG C-1100 DEG C, processes 5-10 minute to substrate; Then temperature is reduced, at 530-550 DEG C, chamber pressure 500torr, in a hydrogen atmosphere, V/III mol ratio is 500-1300, the low temperature GaN nucleating layer of three dimensional growth 20-30 nanometer thickness;
2) at 1000-1500 DEG C, chamber pressure is 200-300torr, and in a hydrogen atmosphere, V/III mol ratio is 1000-1300, growth 2-4 micron thickness high temperature undoped GaN resilient coating;
3) at 1000-1500 DEG C, chamber pressure is 100-200torr, and in a hydrogen atmosphere, V/III mol ratio is 1000-1300, growth 2-4 micron thickness n-GaN layer; Si doping content is 10
18-10
19cm
-3;
4) at 750-850 DEG C, in a nitrogen atmosphere, V/III mol ratio is 5000-10000, chamber pressure 300torr, the N-shaped In of the wide gradual change of quantum well in 10 to 20 cycles of growth
x1ga
1-x1n/Al
y1ga
1-y1the N-shaped stress release layer of N superlattice structure; Along with the increase of superlattice period number, n-In
x1ga
1-x1n/Al
y1ga
1-y1potential well In in N superlattice stress release layer
x1ga
1-x1the thickness of N layer is from 1nm step variation to 5.5nm, potential barrier Al
y1ga
1-y1n layer thickness keeps fixed numbers constant;
5) at 750-850 DEG C, in a nitrogen atmosphere, V/III mol ratio is 5000-10000, chamber pressure 300torr, then grows 5-10 cycle In
xga
1-xn/Al
yga
1-yn multiple quantum well active layer, wherein In
xga
1-xn quantum well layer thickness is 2-3nm, Al
yga
1-ynl barrier layer thickness is 10-20nm;
6) at 780 DEG C-850 DEG C, on the active area, in a nitrogen atmosphere, V/III mol ratio is 5000-10000, chamber pressure 100-300torr, growth 20nm-40nm p-Al
y2in
x2ga
1-x2-y2n electronic barrier layer; Mg doping content is 10
17-10
18cm
-3;
7) at 950 DEG C-1050 DEG C, in a hydrogen atmosphere, V/III mol ratio is 2000-5000, chamber pressure 100torr, and growth 100nm-200nm p-GaN, Mg doping content is 10
17-10
18cm
-3;
8) at 650 DEG C-750 DEG C, in a hydrogen atmosphere, V/III mol ratio is 5000-10000, chamber pressure 300torr, and growth 2nm-3nm p-InGaN contact layer, Mg doping content is greater than 10
18cm
-3.
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