CN106876531A - A kind of epitaxial wafer of light emitting diode and preparation method thereof - Google Patents
A kind of epitaxial wafer of light emitting diode and preparation method thereof Download PDFInfo
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- CN106876531A CN106876531A CN201710021780.1A CN201710021780A CN106876531A CN 106876531 A CN106876531 A CN 106876531A CN 201710021780 A CN201710021780 A CN 201710021780A CN 106876531 A CN106876531 A CN 106876531A
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- layer
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- cushion
- epitaxial wafer
- quantum well
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials
Abstract
The invention discloses a kind of epitaxial wafer of light emitting diode and preparation method thereof, belong to technical field of semiconductors.The epitaxial wafer includes substrate and the low temperature buffer layer, high temperature buffer layer, N-type GaN layer, quantum cushion, luminescent layer, the p-type GaN layer that are sequentially laminated on substrate, luminescent layer includes some sublayers, sublayer includes quantum well layer and the quantum barrier layer being layered on quantum well layer, and the lattice parameter of quantum cushion is between the lattice parameter of quantum well layer and the lattice parameter of quantum barrier layer.The present invention is by the quantum cushion between N-type GaN layer and luminescent layer, the lattice parameter of quantum cushion is between the lattice parameter of quantum well layer and the lattice parameter of quantum barrier layer, the stress that quantum well layer and quantum barrier layer are produced on quantum cushion during alternating growth can be reduced, so as to reduce the lattice defect in luminescent layer, the radiation recombination in electronics and hole is increased, the internal quantum efficiency of light emitting diode is finally improved.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of epitaxial wafer of light emitting diode and preparation method thereof.
Background technology
Semiconductor light-emitting-diode (English with gallium nitride as representative：Light Emitting Diode, referred to as：LED),
With good characteristics, its ternary alloy three-partalloy InGaN such as energy gap is big, electronics saturation drift velocity high, high temperature resistant, high power capacities
Band gap from 0.7ev to 3.4ev continuously adjustabe, the whole region of emission wavelength covering visible light and ultraviolet, in emerging light
There is vast prospect in electric industry.
GaN base LED be the U-shaped GaN layer of hetero-substrates (such as Sapphire Substrate) Epitaxial growth, N-type GaN layer,
Luminescent layer, p-type GaN layer are formed.Wherein, luminescent layer includes alternately laminated InGaN quantum well layers and GaN quantum barrier layers, GaN amounts
Hole in electronics in N-type GaN layer and p-type GaN layer is limited in recombination luminescence in InGaN quantum well layers by sub- barrier layer.
Realize it is of the invention during, inventor find prior art at least there is problems with：
Lattice mismatch is big between GaN and substrate, in extending to luminescent layer in order to avoid lattice defect, generally in N-type GaN
Shallow quantum well layer is set between layer and luminescent layer, to reduce the stress that U-shaped GaN layer and N-type GaN layer are accumulated.But InGaN quantum
Lattice mismatch is there is also between well layer and GaN quantum barrier layers, causes still there is larger stress in luminescent layer, produced more
Lattice defect, increased the non-radiative recombination in electronics and hole, reduce the radiation recombination in electronics and hole, eventually reduce hair
The internal quantum efficiency of optical diode.
The content of the invention
In order to solve problem of the prior art, the epitaxial wafer and its system of a kind of light emitting diode are the embodiment of the invention provides
Preparation Method.The technical scheme is as follows：
On the one hand, the embodiment of the invention provides a kind of epitaxial wafer of light emitting diode, the epitaxial wafer include substrate, with
And stack gradually low temperature buffer layer, high temperature buffer layer, N-type GaN layer, luminescent layer, p-type GaN layer over the substrate, the hair
Photosphere includes some sublayers, and the sublayer includes quantum well layer and the quantum barrier layer being layered on the quantum well layer, described outer
Prolonging piece also includes the quantum cushion being layered between the N-type GaN layer and the luminescent layer, the lattice of the quantum cushion
Constant is between the lattice parameter of the quantum well layer and the lattice parameter of the quantum barrier layer.
In a kind of possible implementation of the present invention, the quantum well layer is InGaN layer, and the quantum barrier layer is GaN
Layer；The quantum cushion is InGaN layer, and the content of In components is less than In groups in the quantum well layer in the quantum cushion
0.1 times of the content divided.
In the alternatively possible implementation of the present invention, the quantum well layer is GaN layer, and the quantum barrier layer is
AlGaN layer；The quantum cushion is AlGaN layer, and the content of Al components is less than the quantum barrier layer in the quantum cushion
0.1 times of the content of middle Al components.
In another possible implementation of the invention, the quantum well layer is InGaN layer, and the quantum barrier layer is
AlGaN layer；The quantum cushion is InAlGaN layer, InGaN layer, AlGaN layer, the one kind in GaN layer, and the quantum is buffered
The content of In components is less than 0.1 times of the content of In components in the quantum well layer, and Al groups in the quantum cushion in layer
0.1 times of the content divided less than the content of Al components in the quantum barrier layer.
Alternatively, the absolute value of the difference of the thickness of the thickness of the quantum cushion and the quantum barrier layer is less than setting
Value, or the quantum cushion thickness more than the quantum barrier layer thickness.
Alternatively, the epitaxial wafer also includes the insert layer being layered between the quantum cushion and the luminescent layer,
The thickness of the insert layer is less than 10nm.
Alternatively, the epitaxial wafer also includes the shallow quantum being layered between the N-type GaN layer and the quantum cushion
Well layer.
Alternatively, the quantum undoped buffer layer has Si.
On the other hand, a kind of preparation method of the epitaxial wafer of light emitting diode, the preparation be the embodiment of the invention provides
Method includes：
Low temperature growth buffer layer, high temperature buffer layer, N-type GaN layer, quantum cushion, luminescent layer, p-type successively on substrate
GaN layer；
Wherein, the luminescent layer includes some sublayers, and the sublayer includes quantum well layer and is layered in the quantum well layer
On quantum barrier layer, the lattice parameter and the quantum barrier layer of the lattice parameter of the quantum cushion in the quantum well layer
Between lattice parameter.
Alternatively, the absolute value of the difference of the growth temperature of the growth temperature of the quantum cushion and the quantum barrier layer is not
More than 50 DEG C
The beneficial effect that technical scheme provided in an embodiment of the present invention is brought is：
By the quantum cushion between N-type GaN layer and luminescent layer, the lattice parameter of quantum cushion is in quantum well layer
Lattice parameter and the lattice parameter of quantum barrier layer between, it is possible to reduce quantum well layer and quantum barrier layer are submitted in quantum cushion
The stress produced during for growth, so as to reduce the lattice defect in luminescent layer, reduces the non-radiative recombination in electronics and hole, increases
Add the radiation recombination in electronics and hole, finally improve the internal quantum efficiency of light emitting diode.
Brief description of the drawings
Technical scheme in order to illustrate more clearly the embodiments of the present invention, below will be to that will make needed for embodiment description
Accompanying drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, for
For those of ordinary skill in the art, on the premise of not paying creative work, other can also be obtained according to these accompanying drawings
Accompanying drawing.
Fig. 1 is a kind of structural representation of the epitaxial wafer of light emitting diode that the embodiment of the present invention one is provided；
Fig. 2 is that a kind of flow of the preparation method of the epitaxial wafer of light emitting diode that the embodiment of the present invention two is provided is illustrated
Figure.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing to embodiment party of the present invention
Formula is described in further detail.
Embodiment one
The embodiment of the invention provides a kind of epitaxial wafer of light emitting diode, referring to Fig. 1, the epitaxial wafer include substrate 1, with
And stack gradually low temperature buffer layer 2, high temperature buffer layer 3, N-type GaN layer 4, quantum cushion 5, luminescent layer 6, P on substrate 1
Type GaN layer 7.
In the present embodiment, as shown in figure 1, luminescent layer 6 includes some sublayers 60, sublayer 60 includes quantum well layer 61 and layer
It is stacked in the quantum barrier layer 62 on quantum well layer 61.The lattice parameter of quantum cushion is built in the lattice parameter and quantum of quantum well layer
Between the lattice parameter of layer.
In a kind of implementation of the present embodiment, quantum well layer is InGaN layer, and quantum barrier layer is GaN layer；Quantum is buffered
Layer can be InGaN layer, 0.1 times of the content of In components less than the content of In components in quantum well layer in quantum cushion.
In another implementation of the present embodiment, quantum well layer is GaN layer, and quantum barrier layer is AlGaN layer；Quantum delays
It can be AlGaN layer to rush layer, 0.1 times of the content of Al components less than the content of Al components in quantum barrier layer in quantum cushion.
In another implementation of the present embodiment, quantum well layer is InGaN layer, and quantum barrier layer is AlGaN layer；Quantum
Cushion can be the one kind in InAlGaN layers, InGaN layer, AlGaN layer, GaN layer, the content of In components in quantum cushion
Less than 0.1 times of the content of In components in quantum well layer, and in quantum cushion, the content of Al components is less than Al in quantum barrier layer
0.1 times of the content of component.
Alternatively, the absolute value of the difference of the thickness of the thickness of quantum cushion and quantum barrier layer is less than setting value, Huo Zheliang
The thickness of sub- cushion is produced more than the thickness of quantum barrier layer with playing a part of reduction stress.
Alternatively, quantum cushion can be beneficial to electron injection mixed with Si.
Specifically, substrate can be Sapphire Substrate, and low temperature buffer layer and high temperature buffer layer can be GaN layer.Further
Ground, can be mixed with Al in low temperature buffer layer and high temperature buffer layer.
Specifically, N-type GaN layer can be using Si as N type dopant, and p-type GaN layer can be adulterated using Mg as p-type
Agent.
Alternatively, the epitaxial wafer can also include the insert layer being layered between quantum cushion and luminescent layer, such as electronics
The thickness of barrier layer insert layer is less than 10nm.
Alternatively, the epitaxial wafer can also include the shallow quantum well layer being layered between N-type GaN layer and quantum cushion,
Luminescent layer is extended to intercept lattice defect.
Alternatively, the epitaxial wafer can also include the transition zone being layered between luminescent layer and p-type GaN layer, such as p-type
AlGaN layer.
Alternatively, the epitaxial wafer can also include the p-type contact layer being layered in p-type GaN layer.
The embodiment of the present invention is by the quantum cushion between N-type GaN layer and luminescent layer, and the lattice of quantum cushion is normal
Number is between the lattice parameter of quantum well layer and the lattice parameter of quantum barrier layer, it is possible to reduce quantum well layer and quantum barrier layer are in amount
The stress produced during alternating growth on sub- cushion, so as to reduce the lattice defect in luminescent layer, reduces electronics and hole
Non-radiative recombination, increased the radiation recombination in electronics and hole, finally improve the internal quantum efficiency of light emitting diode.
Embodiment two
The embodiment of the invention provides a kind of preparation method of the epitaxial wafer of light emitting diode, it is adaptable to prepare embodiment one
The epitaxial wafer of offer.High-purity H is used when realizing2Or N2As carrier gas, using TMGa, TMAl, TMIn and NH3Respectively as Ga
Source, Al sources, In sources and N sources, using SiH4And Cp2Mg respectively as N type dopant and P-type dopant, using Organometallic Chemistry
Vapor deposition apparatus or other equipment complete epitaxial wafer and prepare.
Specifically, referring to Fig. 2, the preparation method includes：
Step 200：H by substrate at 1300 DEG C2Heat treatment 10 minutes is carried out under atmosphere, the surface of substrate is cleaned.
Step 201：In Grown low temperature buffer layer.
Specifically, the step 201 can include：
At a temperature of 550 DEG C, in the GaN layer that superficial growth a layer thickness of substrate is 20~300nm, form low temperature and delay
Rush layer.
Step 202：High temperature buffer layer is grown on low temperature buffer layer.
Specifically, the step 202 can include：
Temperature is risen to 1100 DEG C, the GaN layer that a layer thickness is 3 μm is grown on low temperature buffer layer, form high-temperature buffer
Layer.
Step 203：N-type GaN layer is grown on high temperature buffer layer.
Specifically, the step 203 can include：
The GaN layer of the doping Si that a layer thickness is 2 μm is grown on high temperature buffer layer, N-type GaN layer is formed.
Step 204：The grown quantum cushion in N-type GaN layer.
In the present embodiment, quantum cushion is InGaN layer of the lattice parameter between quantum well layer and quantum barrier layer,
The content of In components is 3% in InGaN layer, and the thickness of InGaN layer is 10~30nm.
Alternatively, can be mixed with Si in InGaN layer.
Step 205：Luminescent layer is grown on quantum cushion.
In the present embodiment, luminescent layer includes 5~10 sublayers, and sublayer includes quantum well layer and is layered on quantum well layer
Quantum barrier layer, quantum well layer is that thickness is the InGaN layer (content of In components can be 5%~10%) of 2.5nm, and quantum is built
Layer is the GaN layer of 15nm for thickness.
Alternatively, can be mixed with Si in GaN layer.
Step 206：The growth P-type GaN layer on luminescent layer.
Specifically, the step 206 can include：
Growth thickness is the GaN layer of the doping Mg of 300nm on luminescent layer, forms p-type GaN layer.
The embodiment of the present invention is by the quantum cushion between N-type GaN layer and luminescent layer, and the lattice of quantum cushion is normal
Number is between the lattice parameter of quantum well layer and the lattice parameter of quantum barrier layer, it is possible to reduce quantum well layer and quantum barrier layer are in amount
The stress produced during alternating growth on sub- cushion, so as to reduce the lattice defect in luminescent layer, reduces electronics and hole
Non-radiative recombination, increased the radiation recombination in electronics and hole, finally improve the internal quantum efficiency of light emitting diode.
The foregoing is only presently preferred embodiments of the present invention, be not intended to limit the invention, it is all it is of the invention spirit and
Within principle, any modification, equivalent substitution and improvements made etc. should be included within the scope of the present invention.
Claims (10)
1. a kind of epitaxial wafer of light emitting diode, the epitaxial wafer include substrate and stack gradually over the substrate it is low
Warm cushion, high temperature buffer layer, N-type GaN layer, luminescent layer, p-type GaN layer, the luminescent layer include some sublayers, the sublayer
Including quantum well layer and the quantum barrier layer being layered on the quantum well layer, it is characterised in that the epitaxial wafer also includes stacking
Quantum cushion between the N-type GaN layer and the luminescent layer, the lattice parameter of the quantum cushion is in the quantum
Between the lattice parameter of the lattice parameter of well layer and the quantum barrier layer.
2. epitaxial wafer according to claim 1, it is characterised in that the quantum well layer is InGaN layer, the quantum barrier layer
It is GaN layer；The quantum cushion is InGaN layer, and the content of In components is less than the quantum well layer in the quantum cushion
0.1 times of the content of middle In components.
3. epitaxial wafer according to claim 1, it is characterised in that the quantum well layer is GaN layer, the quantum barrier layer is
AlGaN layer；The quantum cushion is AlGaN layer, and the content of Al components is less than the quantum barrier layer in the quantum cushion
0.1 times of the content of middle Al components.
4. epitaxial wafer according to claim 1, it is characterised in that the quantum well layer is InGaN layer, the quantum barrier layer
It is AlGaN layer；The quantum cushion is InAlGaN layer, InGaN layer, AlGaN layer, the one kind in GaN layer, and the quantum is slow
Rush 0.1 times of content less than the content of In components in the quantum well layer of In components in layer, and Al in the quantum cushion
0.1 times of the content of component less than the content of Al components in the quantum barrier layer.
5. the epitaxial wafer according to any one of Claims 1 to 4, it is characterised in that the thickness of the quantum cushion and institute
The absolute value for stating the difference of the thickness of quantum barrier layer is built less than setting value, or the thickness of the quantum cushion more than the quantum
The thickness of layer.
6. the epitaxial wafer according to any one of Claims 1 to 4, it is characterised in that the epitaxial wafer also includes being layered in institute
The insert layer between quantum cushion and the luminescent layer is stated, the thickness of the insert layer is less than 10nm.
7. the epitaxial wafer according to any one of Claims 1 to 4, it is characterised in that the epitaxial wafer also includes being layered in institute
State the shallow quantum well layer between N-type GaN layer and the quantum cushion.
8. epitaxial wafer according to claim 1 and 2, it is characterised in that the quantum undoped buffer layer has Si.
9. a kind of preparation method of the epitaxial wafer of light emitting diode, it is characterised in that the preparation method includes：
Low temperature growth buffer layer, high temperature buffer layer, N-type GaN layer, quantum cushion, luminescent layer, p-type GaN successively on substrate
Layer；
Wherein, the luminescent layer includes some sublayers, and the sublayer includes quantum well layer and is layered on the quantum well layer
Quantum barrier layer, the lattice parameter of the quantum cushion is in the lattice parameter of the quantum well layer and the lattice of the quantum barrier layer
Between constant.
10. preparation method according to claim 9, it is characterised in that the growth temperature of the quantum cushion with it is described
The absolute value of the difference of the growth temperature of quantum barrier layer is no more than 50 DEG C.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108447952A (en) * | 2018-03-26 | 2018-08-24 | 华灿光电（浙江）有限公司 | A kind of LED epitaxial slice and preparation method thereof |
| CN113097353A (en) * | 2021-04-02 | 2021-07-09 | 厦门乾照光电股份有限公司 | Ultraviolet LED and manufacturing method thereof |
| CN114038955A (en) * | 2021-02-25 | 2022-02-11 | 重庆康佳光电技术研究院有限公司 | Epitaxial structure of light-emitting chip, light-emitting chip and display back plate |
| WO2022156047A1 (en) * | 2021-01-21 | 2022-07-28 | 厦门乾照光电股份有限公司 | Semiconductor epitaxial structure and manufacturing method therefor, and led chip |
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| CN108447952A (en) * | 2018-03-26 | 2018-08-24 | 华灿光电（浙江）有限公司 | A kind of LED epitaxial slice and preparation method thereof |
| CN108447952B (en) * | 2018-03-26 | 2020-04-14 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
| WO2022156047A1 (en) * | 2021-01-21 | 2022-07-28 | 厦门乾照光电股份有限公司 | Semiconductor epitaxial structure and manufacturing method therefor, and led chip |
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| CN113097353A (en) * | 2021-04-02 | 2021-07-09 | 厦门乾照光电股份有限公司 | Ultraviolet LED and manufacturing method thereof |
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