CN115360273A - Nitride semiconductor light-emitting element and manufacturing method thereof - Google Patents
Nitride semiconductor light-emitting element and manufacturing method thereof Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 87
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 230000007547 defect Effects 0.000 claims abstract description 17
- 239000002131 composite material Substances 0.000 claims abstract description 12
- 239000013078 crystal Substances 0.000 claims abstract description 12
- 230000006911 nucleation Effects 0.000 claims abstract description 12
- 238000010899 nucleation Methods 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 11
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 239000011777 magnesium Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 238000004020 luminiscence type Methods 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 125000004122 cyclic group Chemical group 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
The invention discloses a nitride semiconductor light-emitting element, which comprises a substrate, and a buffer layer, a three-dimensional growth layer, a U-shaped semiconductor layer, an N-shaped semiconductor layer, an active layer and a P-shaped semiconductor layer which are sequentially stacked on the substrate; the three-dimensional growth layer comprises a plurality of composite growth structures stacked by two sublayers, each composite structure comprises a first sublayer and a second sublayer, and the material of the first sublayer is GaN, preferably U-shaped GaN; the second sublayer is InAlN, the component proportion range is InxAl1-xN, wherein x is more than 0.05 and less than 0.5, and the preferred component proportion is In0.17Al0.83N. According to the invention, by growing a novel three-dimensional growth layer, a large island is formed for the longitudinal three-dimensional growth of the nucleation island, and finally the large islands are combined to lay a smooth GaN layer with high crystal growth quality and low defect density for subsequent growth, so that the defect dislocation in the epitaxial wafer structure in the prior art can be improved and reduced, the crystal growth quality can be improved, and the ESD antistatic capability and the luminous efficiency can be improved.
Description
Technical Field
The present invention relates to the field of semiconductor technology, and more particularly, to a nitride semiconductor light emitting device and a method for fabricating the same.
Background
A light emitting diode, referred to as LED for short, is a commonly used light emitting device, emits light by energy released by recombination of electrons and holes, and is widely used in the field of illumination. The light emitting diode can efficiently convert electric energy into light energy, and has wide application in modern society, such as illumination, flat panel display, medical devices and the like. Such electronic devices were developed as early as 1962, and only emitted red light of low light intensity in the early stage, and then other versions of monochromatic light were developed, and the emitted light was distributed to visible light, infrared light and ultraviolet light, and the light intensity was also increased to a comparable light intensity. The utility model can be used as an indicator light, a display panel and the like at the beginning; with the continuous progress of technology, light emitting diodes have been widely used for displays and lighting.
In the prior art, as shown in fig. 1, a GaN buffer layer grown on a sapphire substrate by a two-step growth method forms independent and separate nucleation islands on a substrate unit cell under a low temperature condition, then grows longitudinally with the nucleation islands as centers under a high pressure condition, traces the small islands to become large islands, and finally merges. Due to the difference of lattice constants of heterogeneous growth, a large number of heterogeneous defects are generated at the interface, and meanwhile, a large number of linear dislocations are generated in the nucleation island of the buffer layer in the growth merging process, and penetrating defects are formed in the subsequent growth process. Under the influence of polarization effect, the defects are further deteriorated, thereby causing deterioration of crystal growth quality, affecting ESD antistatic ability, and affecting luminous efficiency.
Disclosure of Invention
The invention aims to provide a nitride semiconductor light-emitting element and a manufacturing method thereof, wherein a novel three-dimensional growth layer is grown to form a large island for the longitudinal three-dimensional growth of a nucleation island, and finally the large islands are combined to lay a smooth GaN layer with high growth crystal quality and low defect density for subsequent growth, so that the defect dislocation in an epitaxial wafer structure in the prior art can be reduced, the growth crystal quality can be improved, and the ESD antistatic capability and the light-emitting efficiency can be improved, so that the problems in the background art can be solved.
In order to achieve the purpose, the invention provides the following technical scheme:
a nitride semiconductor light-emitting element comprises a substrate, and a buffer layer, a three-dimensional growth layer, a U-shaped semiconductor layer, an N-shaped semiconductor layer, an active layer and a P-shaped semiconductor layer which are sequentially stacked on the substrate; the three-dimensional growth layer comprises a plurality of composite growth structures stacked by two sublayers, each composite structure comprises a first sublayer and a second sublayer, and the first sublayer is made of GaN, preferably U-shaped GaN; the second sublayer is InAlN, the component proportion range is InxAl1-xN, wherein x is more than 0.05 and less than 0.5, and the preferred component proportion is In0.17Al0.83N.
The further scheme of the invention is that the three-dimensional growth layer has the repetition frequency of N, wherein N is more than or equal to 1 and less than or equal to 10, and N =8 is preferred.
The further scheme of the invention is that the total thickness of the three-dimensional growth layer is 0.5-2.5 um, and the preferred thickness is 1.76um.
In a further embodiment of the invention, the first sub-layer has a thickness in the range of 100nm to 300nm, preferably 200nm.
In a further embodiment of the invention, the thickness of the second sublayer ranges from 10nm to 30nm, preferably 20nm.
A method for manufacturing a nitride semiconductor light emitting element includes the steps of:
s1, growing a buffer layer on a substrate to make up lattice mismatch and form a nucleation island; wherein the control temperature in the S1 is 600-850 ℃ at a low temperature, and the preferred temperature is 800 ℃; the pressure is 100to 500torr, and preferably 150torr.
S2, continuously growing a three-dimensional growth layer on the buffer layer, and firstly, starting to grow a first sublayer; wherein the temperature in S2 is controlled to be 980-1040 ℃, and the preferred temperature is 1010 ℃; the pressure is 400to 500torr, and the preferable pressure is 500torr; the thickness of the first sub-layer is in the range of 100nm to 300nm, preferably 200nm.
S3, continuing to grow a second sublayer on the first sublayer; wherein the temperature in S3 is controlled to be 1070-1120 ℃, and the preferred temperature is 1100 ℃; the pressure is 100to 200torr, preferably 150torr; the thickness of the second sub-layer is in the range of 10nm to 30nm, with a preferred thickness of 20nm.
And S4, the first sub-layer and the second sub-layer continue to grow alternately again, the repetition frequency is N, wherein N is more than or equal to 1 and less than or equal to 10, and the total thickness of the three-dimensional growth layer is ensured to be 0.5-2.5 um.
S5, continuously growing a U-shaped semiconductor layer on the three-dimensional growth layer, wherein GaN with high crystal quality and low defect density grows on the three-dimensional growth layer; wherein the control temperature of the U-shaped semiconductor layer in the S5 is 1050-1150 ℃, and the preferred temperature is 1120 ℃; the pressure is 100to 300torr, preferably 200torr, and the surface is flat after the growth is finished.
S6, continuously growing an N-type semiconductor layer on the U-type semiconductor layer to provide electrons; wherein Si is doped in the N-type semiconductor in S6 to provide electrons, the temperature is controlled to be 1000-1100 ℃, and the pressure is controlled to be 100-300 torr.
S7, growing an active layer on the N-type semiconductor, and forming multi-quantum well convergent luminescence through the convergence of electrons and holes; wherein, the temperature of the active layer in S7 is controlled to be 770-810 ℃, and the pressure is controlled to be 100-300 torr.
S8, growing a P-type semiconductor layer after the active layer grows, and providing a cavity by doping magnesium; wherein the temperature of the active layer in S8 is controlled to be 900-1010 ℃, and the pressure is controlled to be 100-300 torr.
In a further aspect of the present invention, in S4, the conditions of temperature, pressure, and thickness of the first sublayer and the second sublayer are the same as those in S2 and S3.
The further scheme of the invention is that the concentration of silicon doping in S6 is 1e + 19-2e +20.
The invention has the beneficial effects that:
according to the nitride semiconductor light-emitting element and the manufacturing method thereof, the novel three-dimensional growth layer is grown to form the large island for the longitudinal three-dimensional growth of the nucleation island, finally the large islands are combined, and the GaN layer with smooth high-growth-crystal quality and low-defect density is laid for the subsequent growth, so that the defect dislocation in the epitaxial wafer structure in the prior art can be improved and reduced, the crystal growth quality is improved, and the ESD (electrostatic discharge) resistance and the light-emitting efficiency are improved.
Second, according to the nitride semiconductor light emitting device and the method for manufacturing the same of the present invention, the first sub-layer is formed by growing the three-dimensional growth layer at a high pressure and a low temperature to delay nucleation island combination, thereby reducing the number of defects.
And thirdly, the second sublayer is an InAlN layer grown at high temperature and low pressure so as to shield the defects caused by the growth of the bottom layer, block or turn the defects and counteract the piezoelectric polarization field.
Fourthly, according to the nitride semiconductor light-emitting element and the manufacturing method thereof, the number of times of cyclic stacking of the first sublayer and the second sublayer is 1-8, stress is prevented from being continuously accumulated by adopting cyclic stacking, and meanwhile, the defect blocking effect can be better achieved by a plurality of cyclic structures.
Fifth, in the nitride semiconductor light emitting device and the method for manufacturing the same according to the present invention, the preferable composition ratio of InAlN is in0.17al0.83n, and in this case, lattice matching (almost the same lattice constant) is formed between InAlN and GaN, and a piezoelectric polarization field is almost absent.
Drawings
Fig. 1 is a schematic structural diagram of a semiconductor light emitting device in the prior art.
Fig. 2 is a schematic view of the entire structure of the nitride semiconductor light emitting device according to the present invention.
Fig. 3 is a schematic structural view of a three-dimensional growth layer in the present invention.
In the figure: the semiconductor device comprises a 10-substrate, a 20-buffer layer, a 30-three-dimensional growth layer, a 31-first sublayer, a 32-second sublayer, a 40-U-shaped semiconductor layer, a 50-N-shaped semiconductor layer, a 60-active layer and a 70-P-shaped semiconductor layer.
Detailed Description
The invention is further elucidated with reference to the drawings and the embodiments.
Example 1: as shown in fig. 2 to 3, a nitride semiconductor light emitting element includes a substrate 10, and a buffer layer 20, a three-dimensional growth layer 30, a U-type semiconductor layer 40, an N-type semiconductor layer 50, an active layer 60, and a P-type semiconductor layer 70 stacked in this order on the substrate 10; the three-dimensional growth layer 30 comprises a plurality of composite growth structures stacked by two sublayers, each composite structure comprises a first sublayer 31 and a second sublayer 32, the first sublayer 31 is made of GaN, preferably U-shaped GaN; the second sublayer 32 is InAlN, and the component proportion thereof is in0.17al0.83n; the three-dimensionally grown layer 30 is repeated 8 times.
The total thickness of the three-dimensional growth layer 30 is 0.5 um-2.5 um; the thickness range of the first sublayer 31 is 100 nm-300 nm; the thickness of the second sub-layer 32 ranges from 10nm to 30nm.
The method for manufacturing the nitride semiconductor light emitting element comprises the following steps:
s1, growing a buffer layer 20 on a substrate 10 to make up lattice mismatch and form a nucleation island; wherein the control temperature in the S1 is 800 ℃; the pressure was 150torr.
S2, continuously growing the three-dimensional growth layer 30 on the buffer layer 20, and firstly, growing a first sublayer 31; wherein the temperature in S2 is controlled to be 1010 ℃; the pressure is 500torr; the thickness of the first sublayer 31 is 200nm.
S3, continuing to grow a second sublayer 32 on the first sublayer 31; wherein the temperature in S3 is controlled to be 1100 ℃; the pressure is 150torr; the thickness of the second sub-layer 32 is 20nm.
S4, the first sub-layer 31 and the second sub-layer 32 continue to grow alternately again, the repetition frequency is 5, and the total thickness of the three-dimensional growth layer 30 is ensured to be 1.76um; the temperature, pressure and thickness conditions of the first sublayer 31 and the second sublayer 32 are the same as those in S2 and S3.
S5, continuously growing a U-shaped semiconductor layer 40 on the three-dimensional growth layer 30, wherein GaN with high growth crystal quality and low defect density grows on the three-dimensional growth layer 30; wherein the control temperature of the U-shaped semiconductor layer 40 in the S5 is 1120 ℃; the pressure is 200torr, and the surface is flat after the growth is finished.
S6, continuously growing an N-type semiconductor layer 50 on the U-type semiconductor layer 40 to provide electrons; wherein Si is doped in the N-type semiconductor in S6 to provide electrons, the temperature is controlled to 1050 ℃, and the pressure is 200torr; wherein, the concentration of silicon doping is 1e + 19-2e +20.
S7, growing an active layer 60 on the N-type semiconductor, and forming multi-quantum well convergent light emission through convergence of electrons and holes; wherein, the temperature of the active layer 60 in S7 is controlled to be 800 ℃, and the pressure is 200torr.
S8, growing a P-type semiconductor layer 70 after the active layer 60 grows, and providing a cavity by doping magnesium; wherein, the temperature of the active layer 60 in S8 is controlled to 950 ℃ and the pressure is 200torr.
Example 2: as shown in fig. 2 to 3, a nitride semiconductor light emitting element includes a substrate 10, and a buffer layer 20, a three-dimensional growth layer 30, a U-type semiconductor layer 40, an N-type semiconductor layer 50, an active layer 60, and a P-type semiconductor layer 70 stacked in this order on the substrate 10; the three-dimensional growth layer 30 comprises a plurality of composite growth structures stacked by two sublayers, each composite structure comprises a first sublayer 31 and a second sublayer 32, the first sublayer 31 is made of GaN, preferably U-shaped GaN; the second sublayer 32 is InAlN, and the component proportion thereof is in0.17al0.83n; the three-dimensionally grown layer 30 was repeated 7 times.
The total thickness of the three-dimensional growth layer 30 is 0.5 um-2.5 um; the thickness range of the first sublayer 31 is 100 nm-300 nm; the thickness of the second sub-layer 32 is in a range of 10nm to 30nm.
The method for manufacturing the nitride semiconductor light-emitting element comprises the following steps:
s1, growing a buffer layer 20 on a substrate 10 to make up lattice mismatch and form a nucleation island; wherein the control temperature in the S1 is 600 ℃; the pressure was 100torr.
S2, continuing to grow the three-dimensional growth layer 30 on the buffer layer 20, and firstly starting to grow a first sublayer 31; wherein the control temperature in S2 is 980 ℃; the pressure is 400torr; the thickness of the first sublayer 31 is 180nm.
S3, continuing to grow a second sublayer 32 on the first sublayer 31; wherein the control temperature in S3 is 1070 ℃; the pressure is 100torr; the thickness of the second sub-layer 32 is 15nm.
S4, the first sub-layer 31 and the second sub-layer 32 continue to grow alternately again, the repetition frequency is 5, and the total thickness of the three-dimensional growth layer 30 is ensured to be 1.365um; the temperature, pressure and thickness conditions of the first sublayer 31 and the second sublayer 32 are the same as those in S2 and S3.
S5, continuously growing a U-shaped semiconductor layer 40 on the three-dimensional growth layer 30, wherein GaN with high growth crystal quality and low defect density grows on the three-dimensional growth layer 30; wherein the control temperature of the U-shaped semiconductor layer 40 in the S5 is 1050 ℃; the pressure is 100torr, and the surface is flat after the growth is finished.
S6, continuously growing an N-type semiconductor layer 50 on the U-type semiconductor layer 40 to provide electrons; wherein Si is doped in the N-type semiconductor in S6 to provide electrons, the temperature is controlled to be 1000 ℃, and the pressure is controlled to be 100torr; wherein, the concentration of silicon doping is 1e + 19-2e +20.
S7, growing an active layer 60 on the N-type semiconductor, and forming multi-quantum well convergent light emission through convergence of electrons and holes; wherein, the temperature of the active layer 60 in S7 is controlled to 770 ℃, and the pressure is 100torr.
S8, growing a P-type semiconductor layer 70 after the active layer 60 grows, and providing a cavity by doping magnesium; wherein the temperature of the active layer 60 in S8 is controlled to 900 deg.C and the pressure is controlled to 100torr.
Example 3: as shown in fig. 2 to 3, a nitride semiconductor light emitting element includes a substrate 10, and a buffer layer 20, a three-dimensional growth layer 30, a U-type semiconductor layer 40, an N-type semiconductor layer 50, an active layer 60, and a P-type semiconductor layer 70 stacked in this order on the substrate 10; the three-dimensional growth layer 30 comprises a plurality of composite growth structures stacked by two sublayers, each composite structure comprises a first sublayer 31 and a second sublayer 32, and the material of the first sublayer 31 is GaN, preferably U-shaped GaN; the second sublayer 32 is InAlN, and its component ratio is in0.17al0.83n; the three-dimensionally grown layer 30 was repeated 9 times.
The total thickness of the three-dimensional growth layer 30 is 0.5 um-2.5 um; the thickness range of the first sublayer 31 is 100 nm-300 nm; the thickness of the second sub-layer 32 ranges from 10nm to 30nm.
The method for manufacturing the nitride semiconductor light emitting element comprises the following steps:
s1, growing a buffer layer 20 on a substrate 10 to make up lattice mismatch and form a nucleation island; wherein the control temperature in the S1 is 850 ℃; the pressure was 400torr.
S2, continuously growing the three-dimensional growth layer 30 on the buffer layer 20, and firstly, growing a first sublayer 31; wherein the temperature in the S2 is controlled to be 1040 ℃; the pressure is 500torr; the thickness of the first sub-layer 31 is 220nm.
S3, continuing to grow a second sublayer 32 on the first sublayer 31; wherein the control temperature in S3 is 1120 ℃; the pressure is 200torr; the thickness of the second sub-layer 32 is 25nm.
S4, the first sub-layer 31 and the second sub-layer 32 continue to grow alternately again, the repetition time is 5, and the total thickness of the three-dimensional growth layer 30 is guaranteed to be 2.205um; the temperature, pressure and thickness conditions of the first sublayer 31 and the second sublayer 32 are the same as those in S2 and S3.
S5, continuously growing a U-shaped semiconductor layer 40 on the three-dimensional growth layer 30, wherein GaN with high growth crystal quality and low defect density grows on the three-dimensional growth layer 30; wherein the control temperature of the U-shaped semiconductor layer 40 in the S5 is 1150 ℃; the pressure is 300torr, and the surface is flat after the growth is finished.
S6, continuously growing an N-type semiconductor layer 50 on the U-type semiconductor layer 40 to provide electrons; wherein Si is doped in the N-type semiconductor in S6 to provide electrons, the temperature is controlled to be 1100 ℃, and the pressure is 300torr; wherein, the concentration of silicon doping is 1e + 19-2e + 20.
S7, growing an active layer 60 on the N-type semiconductor, and forming multi-quantum well coupled luminescence through the coupling of electrons and holes; wherein, the temperature of the active layer 60 in S7 is controlled to 810 ℃ and the pressure is controlled to 300torr.
S8, growing a P-type semiconductor layer 70 after the active layer 60 grows, and providing a cavity by doping magnesium; wherein, the temperature of the active layer 60 in S8 is controlled to 1010 ℃, and the pressure is controlled to 300torr.
The above embodiments are merely illustrative of the technical concepts and features of the present invention, and the purpose of the embodiments is to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and not to limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered in the protection scope of the present invention.
Claims (10)
1. A nitride semiconductor light-emitting element characterized in that: the light-emitting diode comprises a substrate (10), and a buffer layer (20), a three-dimensional growth layer (30), a U-shaped semiconductor layer (40), an N-shaped semiconductor layer (50), an active layer (60) and a P-shaped semiconductor layer (70) which are sequentially stacked on the substrate (10); the three-dimensional growth layer (30) comprises a plurality of composite growth structures stacked by two sublayers, each composite structure comprises a first sublayer (31) and a second sublayer (32), and the material of the first sublayer (31) is GaN; the second sublayer (32) is InAlN and has a component ratio in the range InxAl1-xN, wherein x is more than 0.05 and less than 0.5.
2. A nitride semiconductor light emitting element according to claim 1, wherein: the three-dimensional growth layer (30) has the repetition frequency N, wherein N is more than or equal to 1 and less than or equal to 10.
3. A nitride semiconductor light emitting element according to claim 2, wherein: the total thickness of the three-dimensional growth layer (30) is 0.5 um-2.5 um.
4. A nitride semiconductor light emitting element according to claim 2 or 3, wherein: the first sublayer (31) is made of U-shaped GaN.
5. A nitride semiconductor light emitting element according to claim 4, wherein: the thickness of the first sub-layer (31) ranges from 100nm to 300nm.
6. A nitride semiconductor light emitting element according to claim 2 or 3, wherein: the thickness range of the second sub-layer (32) is 10 nm-30 nm.
7. A nitride semiconductor light emitting element according to claim 2, wherein: the composition distribution ratio of the second sublayer (32) is In0.17Al0.83N.
8. A method for fabricating a nitride semiconductor light emitting element according to any one of claims 1 to 7, characterized by comprising the steps of:
s1, growing a buffer layer (20) on a substrate (10) to make up lattice mismatch and form a nucleation island; wherein the control temperature in S1 is 600-850 deg.C, and the pressure is 100-500 torr;
s2, continuously growing a three-dimensional growth layer (30) on the buffer layer (20), and firstly starting to grow a first sub-layer (31); wherein the temperature in S2 is controlled to be 980-1040 ℃, and the pressure is 400-500 torr; the thickness of the first sublayer (31) ranges from 100nm to 300nm;
s3, continuing to grow a second sublayer (32) on the first sublayer (31); wherein the temperature in S3 is controlled to be 1070-1120 ℃, and the pressure is controlled to be 100-200 torr; the thickness range of the second sublayer (32) is 10 nm-30 nm;
s4, the first sub-layer (31) and the second sub-layer (32) continue to grow alternately again, the repetition frequency is N, wherein N is more than or equal to 1 and less than or equal to 10, and the total thickness of the three-dimensional growth layer (30) is ensured to be 0.5-2.5 um;
s5, continuously growing a U-shaped semiconductor layer (40) on the three-dimensional growth layer (30), wherein GaN with high growth crystal quality and low defect density grows on the three-dimensional growth layer (30); wherein the control temperature of the U-shaped semiconductor layer (40) in the S5 is 1050-1150 ℃, the pressure is 100-300 torr, and the surface is flat after the growth is finished;
s6, continuously growing an N-type semiconductor layer (50) on the U-type semiconductor layer (40) to provide electrons; wherein Si is doped in the N-type semiconductor in S6 to provide electrons, the temperature is controlled to be 1000-1100 ℃, and the pressure is controlled to be 100-300 torr;
s7, growing an active layer (60) on the N-type semiconductor, and forming multi-quantum well coupled luminescence through the coupling of electrons and holes; wherein the temperature of the active layer (60) in S7 is controlled to be 770-810 ℃, and the pressure is controlled to be 100-300 torr;
s8, growing a P-type semiconductor layer (70) after the active layer (60) grows, and providing a cavity by doping magnesium; wherein the temperature of the active layer (60) in S8 is controlled to be 900-1010 ℃, and the pressure is controlled to be 100-300 torr.
9. The method of manufacturing a nitride semiconductor light emitting element according to claim 8, wherein: in S4, the temperature, pressure and thickness conditions of the first sublayer (31) and the second sublayer (32) are the same as those in S2 and S3.
10. The method of manufacturing a nitride semiconductor light emitting element according to claim 8, wherein: the concentration of silicon doping in S6 is 1e + 19-2e +20.
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004063635A (en) * | 2002-07-26 | 2004-02-26 | Hitachi Cable Ltd | Method of manufacturing nitride semiconductor, semiconductor wafer, and semiconductor device |
| CN102270718A (en) * | 2011-07-25 | 2011-12-07 | 映瑞光电科技(上海)有限公司 | Nitride light emitting diode (LED) structure and preparation method thereof |
| CN104091873A (en) * | 2014-06-12 | 2014-10-08 | 华灿光电(苏州）有限公司 | Light emitting diode epitaxial wafer and manufacture method thereof |
| US20160118539A1 (en) * | 2013-05-09 | 2016-04-28 | The University Of Tokyo | Light emitting diode element and method of manufacturing the same |
| CN107946419A (en) * | 2017-09-26 | 2018-04-20 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer and manufacturing method thereof |
| CN109103312A (en) * | 2018-07-26 | 2018-12-28 | 华灿光电（浙江）有限公司 | A kind of gallium nitride based LED epitaxial slice and preparation method thereof |
| CN109216514A (en) * | 2018-07-26 | 2019-01-15 | 华灿光电（浙江）有限公司 | A kind of gallium nitride based LED epitaxial slice and preparation method thereof |
| CN109545918A (en) * | 2018-09-27 | 2019-03-29 | 华灿光电（浙江）有限公司 | A kind of gallium nitride based LED epitaxial slice and preparation method thereof |
-
2022
- 2022-06-22 CN CN202210712155.2A patent/CN115360273B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004063635A (en) * | 2002-07-26 | 2004-02-26 | Hitachi Cable Ltd | Method of manufacturing nitride semiconductor, semiconductor wafer, and semiconductor device |
| CN102270718A (en) * | 2011-07-25 | 2011-12-07 | 映瑞光电科技(上海)有限公司 | Nitride light emitting diode (LED) structure and preparation method thereof |
| US20160118539A1 (en) * | 2013-05-09 | 2016-04-28 | The University Of Tokyo | Light emitting diode element and method of manufacturing the same |
| CN104091873A (en) * | 2014-06-12 | 2014-10-08 | 华灿光电(苏州）有限公司 | Light emitting diode epitaxial wafer and manufacture method thereof |
| CN107946419A (en) * | 2017-09-26 | 2018-04-20 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer and manufacturing method thereof |
| CN109103312A (en) * | 2018-07-26 | 2018-12-28 | 华灿光电（浙江）有限公司 | A kind of gallium nitride based LED epitaxial slice and preparation method thereof |
| CN109216514A (en) * | 2018-07-26 | 2019-01-15 | 华灿光电（浙江）有限公司 | A kind of gallium nitride based LED epitaxial slice and preparation method thereof |
| CN109545918A (en) * | 2018-09-27 | 2019-03-29 | 华灿光电（浙江）有限公司 | A kind of gallium nitride based LED epitaxial slice and preparation method thereof |
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