CN108597988A - A kind of AlGaN base deep ultraviolet LED epitaxial wafer and preparation method thereof grown on a si substrate - Google Patents
A kind of AlGaN base deep ultraviolet LED epitaxial wafer and preparation method thereof grown on a si substrate Download PDFInfo
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- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 127
- 239000000758 substrate Substances 0.000 title claims abstract description 54
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 230000012010 growth Effects 0.000 claims abstract description 99
- 230000004888 barrier function Effects 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 238000000927 vapour-phase epitaxy Methods 0.000 claims abstract description 9
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 3
- 239000010408 film Substances 0.000 claims description 30
- 229910004205 SiNX Inorganic materials 0.000 claims description 17
- 238000005137 deposition process Methods 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000001954 sterilising effect Effects 0.000 abstract description 3
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 27
- 238000005516 engineering process Methods 0.000 description 26
- 235000012431 wafers Nutrition 0.000 description 24
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 210000002381 plasma Anatomy 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000037230 mobility Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000024241 parasitism Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
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- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
The invention discloses a kind of AlGaN base deep ultraviolet LED epitaxial wafer and preparation method thereof of growth on a si substrate, which is that growth has AlN buffer layers, unintentional doping AlGaN layer, SiN successively from bottom to top on Si (111) substratexInsert layer, the AlGaN layer of N-shaped doping, Al0.45Ga0.55N/Al0.55Ga0.45N multiple quantum well layers, AlGaN electronic barrier layers, the GaN layer of the AlGaN layer and p-type doping of p-type doping.This approach includes the following steps:Using magnetron sputtering method growing AIN buffer layer；Then remaining each layer is grown using metal organic vapor phase epitaxy method again.The LED epitaxial materials of the application have many advantages, such as quality it is high, it is with short production cycle, efficient, convenient for large-scale production, can be used for the fields such as sterilizing, medical instrument, Military Early Warning.
Description
Technical field
The present invention relates to a kind of AlGaN bases deep ultraviolet LED technologies more particularly to one kind to be grown on Si (111) substrate
AlGaN base deep ultraviolet LED epitaxial wafer and preparation method thereof.
Background technology
AlGaN bases deep ultraviolet LED epitaxial materials and device, as the key content of third generation semiconductor materials and devices,
It can be applied to the fields such as sterilizing, medical instrument, Military Early Warning.
Currently, AlGaN base deep ultraviolets LED is mainly based upon epitaxial growth in Sapphire Substrate.Although having been achieved with
Certain progress, but still face problem：(1) on the one hand due to Sapphire Substrate poor thermal conductivity, only 25W/
(mK), cause the heat generated in deep ultraviolet LED component to be difficult to transfer out, influence device performance；(2) another aspect, by
It is difficult to obtain in sapphire higher price, large-sized substrate, AlGaN base deep ultraviolet LED device in Sapphire Substrate is caused to make
Cost is higher.
For solving the above problems, using Si as substrate, high quality AlGaN base deep ultraviolet LED extensions are carried out on it
Material growth.On the one hand, Si substrates thermal conductivity is up to 130W/ (mK), is more than 5 times of Sapphire Substrate, can rapidly by
The heat generated in AlGaN base uv-LED devices, which transfers out rapidly, to be come, and device performance is improved.On the other hand, Si (111) substrate
It is cheap, and large-sized substrate is easy to get (12 inches), and element manufacturing cost can be greatly lowered.
However AlGaN base deep ultraviolet LED epitaxial materials mainly use metallorganic gas on Si (111) substrate at present
Mutually deposit (MOCVD) technology growth.In the epitaxial process, for could Si and Ga melt back etching reaction and Si with
Larger lattice mismatch issue between AlGaN, generally use AlN is as buffer layer.However the primary raw material front three of AlN growths
Base aluminium and ammonia, easy parasitism pre-reaction and Al atomic mobilities are low etc., lead to relatively slow and AlN the crystal of the growth rate of AlN
It is second-rate；Cause AlGaN deep ultraviolets LED epitaxial materials low production efficiency on Si substrates, production cost height and high-performance device
Part is difficult to obtain.
Invention content
For overcome the deficiencies in the prior art, it is grown on a si substrate one of the objects of the present invention is to provide a kind of
AlGaN base deep ultraviolet LED epitaxial wafer.On the one hand, the present invention is used the power on using MS technologies and generates magnetic field, and AlN targets are in magnetic field
Under effect, AlN plasmas are generated, there is higher kinetic energy, therefore there is very strong transfer ability, to improve particle
It is incorporated to the efficiency of AlN, the AlN buffer layers of high quality are obtained on Si (111) substrate；On the other hand, it then uses again
MOCVD grows follow-up AlGaN bases deep ultraviolet LED epitaxial structures；It can since SiNx layer is amorphous state using SiNx insert layers
Pinning dislocation prevents AlGaN layers of Dislocations from extending in multiple quantum well layer, promotes LED luminous efficiencies.
The second object of the present invention is to provide a kind of AlGaN base deep ultraviolet LED epitaxial wafer of growth on a si substrate
Preparation method.This preparation method grows AlGaN base deep ultraviolet LED epitaxial wafer materials on a si substrate, and production efficiency is high, raw
It is high to produce at low cost and luminescent properties.
An object of the present invention adopts the following technical scheme that realization：A kind of AlGaN bases grown on a si substrate are dark purple
Outer LED epitaxial wafer, on Si (111) substrate from bottom to top successively growth have AlN buffer layers, unintentional doping AlGaN layer,
SiNxInsert layer, the AlGaN layer of N-shaped doping, Al0.45Ga0.55N/Al0.55Ga0.45N multiple quantum well layers, AlGaN electronic barrier layers,
The GaN layer of the AlGaN layer and p-type doping of p-type doping.
Further, the thickness of the AlN buffer layers is 50-100nm.
Further, the thickness of the unintentional doping AlGaN layer is 500-1000nm.
Further, the SiNxThe thickness of insert layer is 5-10nm.
Further, the thickness of the AlGaN layer of the N-shaped doping is 2000-3000nm.
Further, the Al0.45Ga0.55N/Al0.55Ga0.45Al in N multiple quantum well layers0.45Ga0.55N thin film thickness
For 3-5nm, Al0.55Ga0.45The thickness of N thin film is 10-12nm.
Further, the thickness of the AlGaN electronic barrier layers is 30-50nm.
Further, the thickness of the AlGaN layer of the p-type doping is 100-200nm.
Further, the thickness of the GaN layer of the p-type doping is 30-50nm.
The second object of the present invention adopts the following technical scheme that realization：A kind of AlGaN bases grown on a si substrate are dark purple
The preparation method of outer LED epitaxial wafer, includes the following steps：
The step of growing AIN buffer layer：Magnetron sputtering method (MS) growing AIN buffer layer is used on Si (111) substrate,
Growth temperature is 400-500 DEG C, film thickness 50-100nm；
The step of growing the AlGaN layer of unintentional doping：Metal organic vapor phase epitaxy method is used on AlN buffer layers
(MOCVD) AlGaN layer of unintentional doping is grown, growth temperature is 1000-1100 DEG C, film thickness 500-1000nm；
Grow SiNxThe step of insert layer：Metal organic vapor phase epitaxy method is used in the AlGaN layer of unintentional doping
(MOCVD) SiN is grownxInsert layer, growth temperature are 800-900 DEG C, film thickness 5-10nm；
The step of AlGaN layer of growing n-type doping：In SiNxMetal organic vapor phase epitaxy method (MOCVD) is used on layer
The AlGaN layer of growing n-type doping, growth temperature are 1000-1100 DEG C, and doping concentration is 3 × 1020-5×1020cm-3, film
Thickness is 2000-3000nm；
Grow Al0.45Ga0.55N/Al0.55Ga0.45The step of N multiple quantum well layers：Using gold in N-shaped doping AlGaN layer
Belong to the Al that organic matter vapour deposition process (MOCVD) grew for 9 periods0.45Ga0.55N/Al0.55Ga0.45N multiple quantum well layers；
Al0.45Ga0.55N quantum trap growth temperature is 750-850 DEG C, thickness 3-5nm；Al0.55Ga0.45N quantum build growth temperature
850-950 DEG C, thickness 10-12nm；
The step of growing AlGaN electronic barrier layers：In Al0.45Ga0.55N/Al0.55Ga0.45Using gold on N multiple quantum well layers
Belong to organic matter vapour deposition process (MOCVD) and grow AlGaN electronic barrier layers, growth temperature is 1000-1100 DEG C, thickness 30-
50nm；
The step of growing the AlGaN layer of p-type doping：Metal organic vapor phase epitaxy is used on AlGaN electronic barrier layers
Method (MOCVD) grows the AlGaN layer of p-type doping, and growth temperature is 1000-1100 DEG C, and doping concentration is 3 × 1019-5×
1019cm-3, film thickness 100-200nm；
The step of growing the GaN layer of p-type doping：The GaN layer of growth p-type doping, growth in the AlGaN layer of p-type doping
1000-1100 DEG C of temperature, doping concentration are 6 × 1019-8×1019cm-3, film thickness 30-50nm.
Compared with prior art, the beneficial effects of the present invention are：
(1) on the one hand, the present invention is used the power on using MS technologies and generates magnetic field, and AlN targets generate under magnetic fields
AlN plasmas have higher kinetic energy, therefore have very strong transfer ability, to improve the effect that particle is incorporated to AlN
Rate obtains the AlN buffer layers of high quality on Si (111) substrate；On the other hand, then use MOCVD growths follow-up again
AlGaN base deep ultraviolet LED epitaxial structures；Using SiNx insert layers, since SiNx layer is amorphous state, can pinning dislocation, prevent
AlGaN layer Dislocations extend in multiple quantum well layer, promote LED luminous efficiencies.
(2) in addition, compared to current AlGaN base ultraviolet LED preparation processes, the application preparation process has LED extensions
The advantages that quality of materials is high, with short production cycle, efficient, convenient for large-scale production, can be used for sterilizing, medical instrument, army
The fields such as thing early warning.
Description of the drawings
The structure that Fig. 1 is grown in AlGaN base deep ultraviolet LED epitaxial wafer on Si (111) substrate for the embodiment of the present invention 1 is shown
It is intended to；
Fig. 2 is the AlGaN base deep ultraviolet LED epitaxial wafer being grown on Si (111) substrate prepared by the embodiment of the present invention 2
Optical microscope；
Fig. 3 is the AlGaN base deep ultraviolet LED epitaxial wafer being grown on Si (111) substrate prepared by the embodiment of the present invention 2
AlGaN (0002) X-ray swing curve figure；
Fig. 4 is the AlGaN base deep ultraviolet LED epitaxial wafer being grown on Si (111) substrate prepared by the embodiment of the present invention 3
Electroluminescent graph；
Fig. 5 is the AlGaN base deep ultraviolet LED epitaxial wafer being grown on Si (111) substrate prepared by the embodiment of the present invention 4
Electroluminescent graph.
In Fig. 1：1, Si (111) substrate；2, AlN buffer layers；3, the AlGaN layer of unintentional doping； 4、SiNxInsert layer；
5, the AlGaN layer of N-shaped doping；6、Al0.45Ga0.55N/Al0.55Ga0.45N multiple quantum well layers；7, AlGaN electronic barrier layers；8、p
The AlGaN layer of type doping；9, the GaN layer of p-type doping.
Specific implementation mode
In the following, in conjunction with attached drawing and specific implementation mode, the present invention is described further, it should be noted that not
Under the premise of conflicting, new reality can be formed between various embodiments described below or between each technical characteristic in any combination
Apply example.
Embodiment 1A kind of AlGaN base deep ultraviolet LED epitaxial wafer grown on a si substrate
As shown in Figure 1, the structure of the AlGaN base deep ultraviolet LED epitaxial wafer of the growth on a si substrate is as follows：In Si
(111) growth has AlN buffer layers, unintentional doping AlGaN layer, SiN successively from bottom to top on substratexInsert layer, N-shaped adulterate
AlGaN layer, Al0.45Ga0.55N/Al0.55Ga0.45N multiple quantum well layers, AlGaN electronic barrier layers, the AlGaN layer and p of p-type doping
The GaN layer of type doping.
Embodiment 2
The preparation method of one kind high quality AlGaN base deep ultraviolet LED epitaxial wafer of epitaxial growth on Si (111) substrate,
Include the following steps：
1) it is 400 DEG C that MS technology growth AlN buffer layers, growth temperature are used on Si (111) substrate, and film thickness is
50nm；
2) AlGaN layer of the unintentional doping of MOCVD technology growths, growth temperature 1000 are used on AlN buffer layers
DEG C, film thickness 500nm；
3) MOCVD technology growth SiNx insert layers, growth temperature 800 are used in the AlGaN layer of unintentional doping
DEG C, film thickness 5nm；
4) using the AlGaN layer of MOCVD technology growth N-shapeds doping on SiNx layer, growth temperature is 1000 DEG C, doping
A concentration of 3 × 1020cm-3, film thickness 2000nm；
5) Al in 9 period of MOCVD technology growths is used in N-shaped doping AlGaN layer0.45Ga0.55N/Al0.55Ga0.45N is more
Quantum well layer；Al0.45Ga0.55750 DEG C of N quantum trap growths temperature, 3 nm of thickness；Al0.55Ga0.45N quantum build growth temperature 850
DEG C, thickness 10nm；
6) MOCVD technology growth AlGaN electronic barrier layers, 1000 DEG C of growth temperature, thickness are used on multiple quantum well layer
30nm；
7) using the AlGaN layer of MOCVD technology growth p-types doping, growth temperature 1000 on electronic barrier layer
DEG C, doping concentration is 3 × 1019cm-3, film thickness 100nm；
8) the GaN contact layers that growth p-type is adulterated in the AlGaN layer of p-type doping, 1000 DEG C of growth temperature, doping concentration
It is 6 × 1019cm-3, film thickness 30nm.
As Figure 2-3, using light microscope, X-ray swing curve electroluminescent spectrum to manufactured in the present embodiment
AlGaN base deep ultraviolet LED epitaxial wafer is tested.Light microscope measures AlGaN base epitaxial wafer surfacings and flawless；X
The half-value width that ray swing curve measures AlGaN (0002) is less than 300 arcsec.The above results show to serve as a contrast in Si (111)
Epitaxial growth has gone out the AlGaN base deep ultraviolet LED epitaxial wafer of high quality on bottom.
Embodiment 3
One kind being grown in the preparation method of the high quality AlGaN base deep ultraviolets LED on Si (111) substrate, including following step
Suddenly：
1) it is 450 DEG C that MS technology growth AlN buffer layers, growth temperature are used on Si (111) substrate, and film thickness is
75nm；
2) AlGaN layer of the unintentional doping of MOCVD technology growths, growth temperature 1050 are used on AlN buffer layers
DEG C, film thickness 750nm；
3) MOCVD technology growths SiN is used in the AlGaN layer of unintentional dopingxInsert layer, growth temperature 850
DEG C, film thickness 7.5nm；
4) in SiNxUsing the AlGaN layer of MOCVD technology growth N-shapeds doping on layer, growth temperature is 1100 DEG C, doping
A concentration of 5 × 1020cm-3, film thickness 3000nm；
5) Al in 9 period of MOCVD technology growths is used in N-shaped doping AlGaN layer0.45Ga0.55N/Al0.55Ga0.45N is more
Quantum well layer；Al0.45Ga0.55800 DEG C of N quantum trap growths temperature, thickness 4nm； Al0.55Ga0.45N quantum build growth temperature 900
DEG C, thickness 11nm；
6) MOCVD technology growth AlGaN electronic barrier layers, 1050 DEG C of growth temperature, thickness are used on multiple quantum well layer
40nm；
7) using the AlGaN layer of MOCVD technology growth p-types doping, growth temperature 1050 on electronic barrier layer
DEG C, doping concentration is 4 × 1019cm-3, film thickness 150nm；
8) the GaN contact layers that growth p-type is adulterated in the AlGaN layer of p-type doping, 1050 DEG C of growth temperature, doping concentration
It is 7 × 1019cm-3, film thickness 40nm.
As shown in figure 4, being surveyed to AlGaN bases deep ultraviolet LED epitaxial wafer manufactured in the present embodiment using electroluminescent
Examination, electroluminescent measure the glow peak of AlGaN base deep ultraviolet LED epitaxial wafer in 276nm, halfwidth 19nm.Show in Si
(111) epitaxial growth has gone out high performance AlGaN bases deep ultraviolet LED epitaxial wafers on substrate.
Embodiment 4
One kind being grown in the preparation method of the high quality AlGaN base deep ultraviolets LED on Si (111) substrate, including following step
Suddenly：
1) it is 500 DEG C that MS technology growth AlN buffer layers, growth temperature are used on Si (111) substrate, and film thickness is
100nm；
2) AlGaN layer of the unintentional doping of MOCVD technology growths, growth temperature 1100 are used on AlN buffer layers
DEG C, film thickness 1000nm；
3) MOCVD technology growths SiN is used in the AlGaN layer of unintentional dopingxInsert layer, growth temperature 900
DEG C, film thickness 10nm；
4) in SiNxUsing the AlGaN layer of MOCVD technology growth N-shapeds doping on layer, growth temperature is 1100 DEG C, doping
A concentration of 5 × 1020cm-3, film thickness 3000nm；
5) 9 period of MOCVD technology growths Al is used in N-shaped doping AlGaN layer0.45Ga0.55N/Al0.55Ga0.45N volumes
Sub- well layer；Al0.45Ga0.55850 DEG C of N quantum trap growths temperature, thickness 5nm；Al0.55Ga0.45N quantum build 950 DEG C of growth temperature,
Thickness 12nm；
6) MOCVD technology growth AlGaN electronic barrier layers, 1100 DEG C of growth temperature, thickness are used on multiple quantum well layer
50nm；
7) using the AlGaN layer of MOCVD technology growth p-types doping, growth temperature 1100 on electronic barrier layer
DEG C, doping concentration is 5 × 1019cm-3, film thickness 200nm；
8) the GaN contact layers that growth p-type is adulterated in the AlGaN layer of p-type doping, 1100 DEG C of growth temperature, doping concentration
It is 8 × 1019cm-3, film thickness 50nm.
As shown in figure 5, being surveyed to AlGaN bases deep ultraviolet LED epitaxial wafer manufactured in the present embodiment using electroluminescent
Examination, electroluminescent measure the glow peak of AlGaN base deep ultraviolet LED epitaxial wafer in 275nm, halfwidth 20nm.Show in Si
(111) epitaxial growth has gone out high performance AlGaN bases deep ultraviolet LED epitaxial wafers on substrate.
The above embodiment is only the preferred embodiment of the present invention, and the scope of protection of the present invention is not limited thereto,
The variation and replacement for any unsubstantiality that those skilled in the art is done on the basis of the present invention belong to institute of the present invention
Claimed range.
Claims (10)
1. a kind of AlGaN base deep ultraviolet LED epitaxial wafer of growth on a si substrate, which is characterized in that on Si (111) substrate certainly
Growth has AlN buffer layers, unintentional doping AlGaN layer, SiN successively on downxInsert layer, N-shaped doping AlGaN layer,
Al0.45Ga0.55N/Al0.55Ga0.45N multiple quantum well layers, AlGaN electronic barrier layers, AlGaN layer and the p-type doping that p-type is adulterated
GaN layer.
2. the AlGaN base deep ultraviolet LED epitaxial wafer of growth as described in claim 1 on a si substrate, which is characterized in that described
The thickness of AlN buffer layers is 50-100nm.
3. the AlGaN base deep ultraviolet LED epitaxial wafer of growth as described in claim 1 on a si substrate, which is characterized in that described
The thickness of unintentional doping AlGaN layer is 500-1000nm.
4. the AlGaN base deep ultraviolet LED epitaxial wafer of growth as described in claim 1 on a si substrate, which is characterized in that described
SiNxThe thickness of insert layer is 5-10nm.
5. the AlGaN base deep ultraviolet LED epitaxial wafer of growth as described in claim 1 on a si substrate, which is characterized in that described
The thickness of the AlGaN layer of N-shaped doping is 2000-3000nm.
6. the AlGaN base deep ultraviolet LED epitaxial wafer of growth as described in claim 1 on a si substrate, which is characterized in that described
Al0.45Ga0.55N/Al0.55Ga0.45Al in N multiple quantum well layers0.45Ga0.55N thin film thickness is 3-5nm, Al0.55Ga0.45N thin film
Thickness be 10-12nm.
7. the AlGaN base deep ultraviolet LED epitaxial wafer of growth as described in claim 1 on a si substrate, which is characterized in that described
The thickness of AlGaN electronic barrier layers is 30-50nm.
8. the AlGaN base deep ultraviolet LED epitaxial wafer of growth as described in claim 1 on a si substrate, which is characterized in that described
The thickness of the AlGaN layer of p-type doping is 100-200nm.
9. the AlGaN base deep ultraviolet LED epitaxial wafer of growth as described in claim 1 on a si substrate, which is characterized in that described
The thickness of the GaN layer of p-type doping is 30-50nm.
10. a kind of preparation method of growth AlGaN base deep ultraviolet LED epitaxial wafer on a si substrate, which is characterized in that including with
Lower step：
The step of growing AIN buffer layer：It is using magnetron sputtering method growing AIN buffer layer, growth temperature on Si (111) substrate
400-500 DEG C, film thickness 50-100nm；
The step of growing the AlGaN layer of unintentional doping：It is non-using the growth of metal organic vapor phase epitaxy method on AlN buffer layers
The AlGaN layer deliberately adulterated, growth temperature are 1000-1100 DEG C, film thickness 500-1000nm；
Grow SiNxThe step of insert layer：It is grown using metal organic vapor phase epitaxy method in the AlGaN layer of unintentional doping
SiNxInsert layer, growth temperature are 800-900 DEG C, film thickness 5-10nm；
The step of AlGaN layer of growing n-type doping：In SiNxUsing the doping of metal organic vapor phase epitaxy method growing n-type on layer
AlGaN layer, growth temperature are 1000-1100 DEG C, and doping concentration is 3 × 1020-5×1020cm-3, film thickness 2000-
3000nm；
Grow Al0.45Ga0.55N/Al0.55Ga0.45The step of N multiple quantum well layers：It is organic using metal in N-shaped doping AlGaN layer
Object vapour deposition process grows the Al in 9 periods0.45Ga0.55N/Al0.55Ga0.45N multiple quantum well layers；Al0.45Ga0.55N quantum trap growths
Temperature is 750-850 DEG C, thickness 3-5nm；Al0.55Ga0.45It is 850-950 DEG C that N quantum, which build growth temperature, thickness 10-12nm；
The step of growing AlGaN electronic barrier layers：In Al0.45Ga0.55N/Al0.55Ga0.45It is organic using metal on N multiple quantum well layers
Object vapour deposition process grows AlGaN electronic barrier layers, and growth temperature is 1000-1100 DEG C, thickness 30-50nm；
The step of growing the AlGaN layer of p-type doping：It is given birth to using metal organic vapor phase epitaxy method on AlGaN electronic barrier layers
The AlGaN layer of long p-type doping, growth temperature are 1000-1100 DEG C, and doping concentration is 3 × 1019-5×1019cm-3, film thickness
For 100-200nm；
The step of growing the GaN layer of p-type doping：The GaN layer of growth p-type doping, growth temperature in the AlGaN layer of p-type doping
1000-1100 DEG C, doping concentration is 6 × 1019-8×1019cm-3, film thickness 30-50nm.
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