CN206225325U - It is grown in the GaN film on magnesium aluminate scandium substrate - Google Patents
It is grown in the GaN film on magnesium aluminate scandium substrate Download PDFInfo
- Publication number
- CN206225325U CN206225325U CN201620979038.2U CN201620979038U CN206225325U CN 206225325 U CN206225325 U CN 206225325U CN 201620979038 U CN201620979038 U CN 201620979038U CN 206225325 U CN206225325 U CN 206225325U
- Authority
- CN
- China
- Prior art keywords
- gan
- substrate
- grown
- gan film
- magnesium aluminate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses the GaN film being grown on magnesium aluminate scandium substrate, including ScMgAlO is grown in successively4GaN cushions on substrate, GaN forming cores layer, GaN amorphous layers and GaN film.The ScMgAlO4Substrate is with (0001) face 0.5~1 ° of (11 20) face partially for epitaxial surface.Compared with prior art, the utility model has the advantages that preparation cost is cheap, and GaN film has that crystal mass is good, the low feature of defect concentration.
Description
Technical field
The utility model is related to GaN film, is more particularly to grown in magnesium aluminate scandium (ScMgAlO4) GaN on substrate is thin
Film.
Background technology
GaN and III- group-III nitrides are full due to broad stopband, the physicochemical properties of stabilization, thermal conductivity high and electronics high
And the advantages of speed, it is widely used in the aspects such as light emitting diode (LED), laser and opto-electronic device.
At present, GaN base device is mainly based upon Sapphire Substrate.Sapphire is up to 13.3% with the lattice mismatch of GaN, leads
Cause to form dislocation density very high during extension GaN film, so as to reduce the carrier mobility of material, shorten current-carrying
The sub- life-span, and then have impact on the performance of GaN base device.Secondly as the Thermal sapphire coefficient of expansion (6.63 × 10 at room temperature-6K-1) thermal coefficient of expansion (5.6 × 10 compared with GaN-6K-1) big, thermal mismatching degree between the two is about 27%；When outer layer growth terminates
Afterwards, device can produce very big compression from the High-temperature cooling of epitaxial growth to room temperature process, be easily caused film and substrate
Cracking.Again, because sapphire thermal conductivity is low (being 25W/m.K at 100 DEG C), it is difficult to the heat produced in chip is arranged in time
Go out, cause thermal accumlation, making the internal quantum efficiency of device reduces, the performance of final influence device.Therefore it is urgent to find a kind of brilliant
The backing material of lattice and matched coefficients of thermal expansion is applied to epitaxial growth GaN film.
Utility model content
In order to overcome the disadvantages mentioned above and deficiency of prior art, the purpose of this utility model is to provide one kind to be grown in aluminium
GaN film on sour magnesium scandium substrate, magnesium aluminate scandium backing material is only 1.8% with the lattice mismatch rate of GaN, and thermal mismatching is small
(9.7%) forming core of GaN, is conducive to；Based on the GaN film of this backing material growth, good with crystal mass, dislocation density is low
Advantage.
The purpose of this utility model is achieved through the following technical solutions：
The GaN film on magnesium aluminate scandium substrate is grown in, including is grown in ScMgAlO successively4GaN bufferings on substrate
Layer, GaN forming cores layer, GaN amorphous layers and GaN film.
The ScMgAlO4Substrate is with (0001) face 0.5~1 ° of (11-20) face partially for epitaxial surface.
The thickness of the GaN cushions is 30~80nm.
The thickness of the GaN forming cores layer is 50~150nm.
The thickness of the GaN amorphous layers is 10~120nm.
The thickness of the GaN film is 100~500nm.
The preparation method of the GaN film being grown on magnesium aluminate scandium substrate, comprises the following steps：
(1) selection of substrate and its crystal orientation：Using ScMgAlO4Substrate, with (0001) face 0.5~1 ° of (11-20) face partially
It is epitaxial surface, crystalline epitaxial orientation relationship is：(0001) face of GaN is parallel to ScMgAlO4(0001) face；
(2) substrate annealing treatment：Place the substrate into annealing chamber, to ScMgAlO at 600~700 DEG C4Substrate is moved back
Fire 1~2h for the treatment of, obtains the substrate surface of atomically flating；
(3) GaN bufferings layer epitaxially grown：Underlayer temperature is adjusted to 450~550 DEG C, using pulsed laser deposition in reative cell
Pressure be 1.0~4.0 × 10-5Pa, laser energy density are 1.5-3.0J/cm2Under conditions of grow GaN cushions；
(4) epitaxial growth of GaN forming cores layer：Using molecular beam epitaxial growth technique, substrate is maintained at 500~600 DEG C,
It is 6.0~8.0 × 10 in the pressure of reative cell-5Pa, the speed of growth be 0.6~0.8ML/s under the conditions of, obtained in step (3)
GaN film is grown on GaN cushions；
(5) growth of GaN amorphous layers：Using molecular beam epitaxial growth technique, substrate is maintained at 350~400 DEG C, anti-
The pressure for answering room is 1.2~2.0 × 10-4Pa, the speed of growth be 0.5~0.6ML/s under the conditions of, in the GaN shapes that step (4) is obtained
GaN amorphous layers, the stress introduced in release growth are grown on stratum nucleare；
(6) epitaxial growth of GaN film：Using molecular beam epitaxial growth technique, substrate is maintained at 500~600 DEG C,
The pressure of reative cell is 6.0~8.0 × 10-5Pa, the speed of growth be 0.6~0.8ML/s under the conditions of, in the GaN that step (5) is obtained
GaN film is grown on amorphous layer.
ScAlMgO4Crystal belongs to hexagonal crystal system, lattice parameter a=0.3246nm, c=2.5195nm, with the face of rhombus six
Layered body structure, the structure to buergerite nitride and zinc oxide is similar.ScAlMgO4It is a kind of and GaN and ZnO lattice parameters
The backing material matched very much with structure.It is about 1.8% with the lattice mismatch rate of GaN, and the lattice mismatch rate with ZnO is only
The thermal coefficient of expansion of 0.09%, a axle is 6.2 × 10-6/ DEG C, the thermal coefficient of expansion of c-axis is 12.2 × 10-6/ DEG C, with GaN, ZnO
Much better than substrates such as traditional sapphires and silicon of coefficient of thermal expansion mismatch between epitaxial film, can make large-sized substrate,
Reduces cost.
Compared with prior art, the utility model has advantages below and beneficial effect：
(1) the utility model uses magnesium aluminate scandium as substrate, ScMgAlO4Substrate is small (1.8%) with GaN lattice mismatches,
Thermal mismatching is small (9.7%), and cheap, advantageously reduces production cost, and magnesium aluminate scandium substrate production technical maturity can be made
Make large-sized substrate；ScMgAlO4Thermal conductivity is higher than sapphire, is conducive to preparing high power device.
(2) the utility model uses magnesium aluminate scandium as substrate, before epitaxial growth GaN film, is first sunk using pulse laser
Product low-temperature epitaxy GaN cushions.GaN cushions can provide the center of forming core, be readily available island GaN, be next step extension
The GaN film of high-quality low defect is laid the groundwork.
(3) the utility model employs GaN amorphous layers this structures.GaN amorphous layers from crystal to amorphous transition during,
Stress in film growth is effectively released, defect is reduced；So as to be easy to grow high-quality GaN film on this basis.
(4) GaN film of the present utility model, X-ray rocking curve half-peak breadth numerical value is small, and crystal mass is high, dislocation density
It is low.In addition using the magnesium aluminate scandium small with GaN lattice mismatches and thermal mismatching degree as substrate, can effectively reduce thermal stress and
The formation of dislocation, is conducive to the growth of high-quality GaN film.The carrier radiation of the GaN base photoelectric material device for preparing
Combined efficiency is high, can increase substantially the luminous of nitride device such as semiconductor laser, light emitting diode and solar cell
Efficiency.
Brief description of the drawings
Fig. 1 is the schematic cross-section of GaN film prepared by embodiment 1.
Fig. 2 is high-resolution X-ray diffraction (HRXRD) collection of illustrative plates of GaN film (GaN (0002)) prepared by embodiment 1.
Fig. 3 is high-resolution X-ray diffraction (HRXRD) collection of illustrative plates of GaN film (GaN (10-12)) prepared by embodiment 1.
Specific embodiment
With reference to embodiment, the utility model is described in further detail, but implementation method of the present utility model
Not limited to this.
Embodiment 1
The preparation method of the high-quality GaN film being grown on magnesium aluminate scandium substrate, comprises the following steps：
(1) selection of substrate and its crystal orientation：Using ScMgAlO4Substrate, be with (0001) face 0.5 ° of (11-20) face partially
Epitaxial surface, crystalline epitaxial orientation relationship is：(0001) face of GaN is parallel to ScMgAlO4(0001) face；
(2) substrate annealing treatment：By in substrate molecular beam epitaxy vacuum growth room, to magnesium aluminate scandium substrate at 600 DEG C
Carry out annealing 1 hour, obtain atomically flating surface；
(3) GaN bufferings layer epitaxially grown：Underlayer temperature is adjusted to 450 DEG C, using pulsed laser deposition reative cell pressure
It is 2.0 × 10-5Pa, laser energy density are 1.8J/cm2Under conditions of grow the thick GaN cushions of 30nm；
(4) epitaxial growth of GaN forming cores layer：Using molecular beam epitaxial growth technique, substrate is maintained at 500 DEG C, anti-
The pressure for answering room is 6.0 × 10-5Pa, the speed of growth be 0.6ML/s under the conditions of, on the GaN cushions that step (3) is obtained grow
Thickness is the GaN film of 100nm；
(5) epitaxial growth of GaN amorphous layers：Using molecular beam epitaxial growth technique, substrate is maintained at 550 DEG C, anti-
The pressure for answering room is 1.6 × 10-4Under the conditions of Pa, the speed of growth are 0.8ML/s, grown on the GaN forming cores layer obtained in step (4)
Thickness is the GaN amorphous layers of 120nm, the stress introduced in release growth；
(6) epitaxial growth of GaN film：Using molecular beam epitaxial growth technique, substrate is maintained at 500 DEG C, in reaction
The pressure of room is 6.0 × 10-5Pa, the speed of growth are under the conditions of 0.6ML/s, growth is thick on the GaN amorphous layers that step (5) is obtained
Spend the GaN film for 200nm.
As shown in figure 1, the GaN film being grown on magnesium aluminate scandium substrate manufactured in the present embodiment, including be grown in
ScMgAlO4GaN cushions 12 on substrate 11；It is grown in the GaN forming cores layer 13 on GaN cushions 12；It is grown in GaN forming cores
GaN amorphous layers 14 on layer 13；It is grown in the GaN film 15 on GaN amorphous layers 14.
Fig. 2~3 are the HRXRD collection of illustrative plates of GaN film manufactured in the present embodiment, be can see from X-ray swing curve,
Half-peak breadth (FWHM) value of the X-ray swing curve of GaN (0002) is less than 0.2 °, and the half-value width of GaN (10-12) is 0.4 °；
Show in ScMgAlO4Substrate Epitaxial growth has gone out high-quality GaN film.
The GaN film being grown on magnesium aluminate scandium substrate manufactured in the present embodiment is used to prepare LED：In the present embodiment system
The N-shaped of epitaxial growth Si doping mixes silicon GaN, In successively in the standby GaN film being grown on magnesium aluminate scandium substratexGa1-xN is more
Quantum well layer, the p-type of Mg doping mix the GaN layer of magnesium, and last electron beam evaporation forms Ohmic contact.Made on magnesium aluminate scandium substrate
The standby GaN base LED component for obtaining, the thickness of its N-shaped GaN is about 8 μm, and the concentration of its carrier is 1 × 1019cm-3；InxGa1- xThe thickness of N/GaN multiple quantum well layers is about 240nm, and periodicity is 15, wherein InxGa1-xN well layer is 3nm, and GaN barrier layer is
13nm, p-type mixes the GaN layer thickness about 400nm of magnesium, and the concentration of its carrier is 2 × 1017cm-3.In the operating current of 20mA
Under, the optical output power of LED component is 4.5mW, and cut-in voltage value is 3V.
The GaN film being grown on magnesium aluminate scandium substrate manufactured in the present embodiment is used to prepare MSM type ultraviolet photoelectrics
Survey device：In the GaN film being grown on magnesium aluminate scandium substrate manufactured in the present embodiment, photoetching development is carried out successively, electron beam steams
Hair depositing electrode forms the techniques such as Schottky contacts, annealing.Wherein depositing electrode thickness is about 80 μm, and annealing temperature is 500 DEG C,
Annealing time is 180s.Under 10V biass, dark current is only 9pA to photodetector prepared by the present embodiment；And device exists
Under 3V biass, the maximum of responsiveness has reached 0.15A/W at 365nm；Photoresponse rises to 90% and only uses 50ps from 10%.
Embodiment 2
The preparation method of the GaN film being grown on magnesium aluminate scandium substrate, comprises the following steps：
(1) selection of substrate and its crystal orientation：Using ScMgAlO4Substrate, with (0001) face 0.5 ° of (11-20) direction partially
It is epitaxial surface, crystalline epitaxial orientation relationship is：(0001) face of GaN is parallel to ScMgAlO4(0001) face；
(2) substrate annealing treatment：By in substrate molecular beam epitaxy vacuum growth room, to magnesium aluminate scandium substrate at 700 DEG C
Carry out annealing 2 hours, obtain atomically flating surface；
(3) GaN bufferings layer epitaxially grown：Underlayer temperature is adjusted to 500 DEG C, using pulsed laser deposition reative cell pressure
It is 3.0 × 10-5Pa, laser energy density are 2.0J/cm2Under conditions of grow the thick GaN cushions of 80nm；
(4) epitaxial growth of GaN forming cores layer：Using molecular beam epitaxial growth technique, substrate is maintained at 600 DEG C, anti-
The pressure for answering room is 8.0 × 10-5Pa, the speed of growth be 0.8ML/s under the conditions of, on the GaN cushions that step (3) is obtained grow
Thickness is the GaN film of 150nm；
(5) growth of GaN amorphous layers：Using molecular beam epitaxial growth technique, substrate is maintained at 350 DEG C, in reative cell
Pressure be 1.4 × 10-4Pa, the speed of growth are under the conditions of 0.6ML/s, the GaN forming cores layer obtained in step (4) goes up growth thickness
It is the GaN amorphous layers of 50nm, the stress introduced in release growth；
(6) epitaxial growth of GaN film：Using molecular beam epitaxial growth technique, substrate is maintained at 500 DEG C, in reaction
The pressure of room is 8.0 × 10-5Pa, the speed of growth are under the conditions of 0.8ML/s, growth is thick on the GaN amorphous layers that step (5) is obtained
Spend the GaN film for 400nm.
GaN film on magnesium aluminate scandium substrate manufactured in the present embodiment has an extraordinary optical property, test data with
Embodiment 1 is close, will not be repeated here.
Above-described embodiment is the utility model preferably implementation method, but implementation method of the present utility model is not by described
The limitation of embodiment, it is other it is any without departing from the change made under Spirit Essence of the present utility model and principle, modify, replace
Generation, combination, simplification, should be equivalent substitute mode, be included within protection domain of the present utility model.
Claims (6)
1. the GaN film on magnesium aluminate scandium substrate is grown in, it is characterised in that including being grown in ScMgAlO successively4On substrate
GaN cushions, GaN forming cores layer, GaN amorphous layers and GaN film.
2. the GaN film being grown on magnesium aluminate scandium substrate according to claim 1, it is characterised in that the ScMgAlO4
Substrate is with (0001) face 0.5~1 ° of (11-20) face partially for epitaxial surface.
3. the GaN film being grown on magnesium aluminate scandium substrate according to claim 1, it is characterised in that the GaN bufferings
The thickness of layer is 30~80nm.
4. the GaN film being grown on magnesium aluminate scandium substrate according to claim 1, it is characterised in that the GaN forming cores
The thickness of layer is 50~150nm.
5. the GaN film being grown on magnesium aluminate scandium substrate according to claim 1, it is characterised in that the GaN amorphous
The thickness of layer is 10~120nm.
6. the GaN film being grown on magnesium aluminate scandium substrate according to claim 1, it is characterised in that the GaN film
Thickness be 100~500nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620979038.2U CN206225325U (en) | 2016-08-29 | 2016-08-29 | It is grown in the GaN film on magnesium aluminate scandium substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620979038.2U CN206225325U (en) | 2016-08-29 | 2016-08-29 | It is grown in the GaN film on magnesium aluminate scandium substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206225325U true CN206225325U (en) | 2017-06-06 |
Family
ID=58781463
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620979038.2U Active CN206225325U (en) | 2016-08-29 | 2016-08-29 | It is grown in the GaN film on magnesium aluminate scandium substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206225325U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106158592A (en) * | 2016-08-29 | 2016-11-23 | 华南理工大学 | GaN film being grown on magnesium aluminate scandium substrate and its preparation method and application |
-
2016
- 2016-08-29 CN CN201620979038.2U patent/CN206225325U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106158592A (en) * | 2016-08-29 | 2016-11-23 | 华南理工大学 | GaN film being grown on magnesium aluminate scandium substrate and its preparation method and application |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104409587B (en) | A kind of InGaN base blue-green light LED epitaxial structure and growing method | |
| US20120061660A1 (en) | ZnO NANOSTRUCTURE-BASED LIGHT EMITTING DEVICE | |
| CN103730554B (en) | A kind of growing method of GaN-based LED epitaxial wafer | |
| WO2018040123A1 (en) | Led epitaxial wafer grown on scandium magnesium aluminum oxide substrate and preparation method therefor | |
| CN103296066B (en) | Growth GaN film on strontium aluminate tantalum lanthanum substrate and preparation method thereof, application | |
| CN106299041A (en) | The preparation method and application of the nonpolar LED being grown in r surface sapphire substrate | |
| KR20120100296A (en) | Stacked structure including vertically grown semiconductor, pn junction device including the same and method for manufacturing them | |
| CN103035789B (en) | Growth is at LiGaO 2nonpolar blue-ray LED epitaxial wafer on substrate and preparation method thereof | |
| JP4949540B2 (en) | Solar cell and manufacturing method thereof | |
| CN103441197B (en) | A kind of GaN base LED epitaxial slice and preparation method thereof | |
| KR101030823B1 (en) | Transparent thin film, light emitting device comprising the same, and methods for preparing the same | |
| CN111354629B (en) | AlN buffer layer structure for ultraviolet LED and manufacturing method thereof | |
| CN103996611A (en) | GaN thin film growing on metal Al substrate and preparing method and application thereof | |
| CN204167348U (en) | A kind of LED epitaxial structure with high-quality InGaN/GaN active layer | |
| CN206225325U (en) | It is grown in the GaN film on magnesium aluminate scandium substrate | |
| CN108597988A (en) | A kind of AlGaN base deep ultraviolet LED epitaxial wafer and preparation method thereof grown on a si substrate | |
| CN106206888B (en) | The InGaN/GaN Quantum Well and preparation method thereof being grown on magnesium aluminate scandium substrate | |
| CN106158592A (en) | GaN film being grown on magnesium aluminate scandium substrate and its preparation method and application | |
| CN106169523B (en) | A kind of LED epitaxial wafer and preparation method thereof grown on a si substrate using L-MBE and MOCVD technology | |
| CN107731971B (en) | Vertical structure LED chip based on photonic crystal and preparation method thereof | |
| CN105977138B (en) | It is grown in GaN film on yttrium-aluminium-garnet substrate and preparation method thereof, application | |
| CN103489974B (en) | A kind of GaN base LED epitaxial slice and preparation method thereof | |
| CN112563380A (en) | AlGaN-based deep ultraviolet LED epitaxial wafer with Si substrate and preparation method thereof | |
| CN202454605U (en) | Nonpolar GaN film growing on LiGao2 substrate | |
| CN105742424B (en) | A kind of GaN film and preparation method thereof of the epitaxial growth on metal Al substrates |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |