CN109461799A - The epitaxial structure and preparation method thereof of deep ultraviolet LED - Google Patents
The epitaxial structure and preparation method thereof of deep ultraviolet LED Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 85
- 238000005036 potential barrier Methods 0.000 claims abstract description 50
- 230000004888 barrier function Effects 0.000 claims abstract description 30
- 239000000203 mixture Substances 0.000 claims abstract description 14
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 12
- 239000010980 sapphire Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 230000000737 periodic effect Effects 0.000 claims abstract description 10
- 238000000137 annealing Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 abstract description 9
- 239000011777 magnesium Substances 0.000 description 22
- 230000000052 comparative effect Effects 0.000 description 15
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
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- 238000005516 engineering process Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
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- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 241001025261 Neoraja caerulea Species 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
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- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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Abstract
The invention discloses the epitaxial structure of deep ultraviolet LED a kind of, including Sapphire Substrate, AlN layers, the N-type AlGaN layer, multiple quantum well active layer, superlattices AlGaN potential barrier, p-type AlGaN electronic barrier layer and p-type GaN layer being sequentially overlapped from the bottom to top；Superlattices AlGaN potential barrier is by potential barrier Alx1Gay1N and potential well Alx2Gay2N periodic arrangement composition；Potential barrier Alx1Gay1N with a thickness of 1nm~3nm, potential well Alx2Gay2N with a thickness of 0.1nm~2nm, wherein 0 < x1< 0.7,0.3 < y1<1；0<x2<x1, y1<y2<1.The invention also discloses a kind of preparation methods of the epitaxial structure of deep ultraviolet LED, thus solve the low technical problem of the optical output power of deep ultraviolet LED in the prior art.
Description
Technical field
The invention belongs to photoelectron technical fields, epitaxial structure and its preparation more particularly, to a kind of deep ultraviolet LED
Method.
Background technique
As LED technology continues to develop, emission wavelength is extended to deep ultraviolet band, technology via visible light wave range
It graduallys mature and with general who has surrendered under cost ultraviolet LED is more widely applied, in some instances it may even be possible to surmount current blue-ray LED.
Deep ultraviolet LED (λ < 300nm) based on AlGaN is net due to its extensive potential application, such as disinfection, air and water
Change, biochemistry detection and optic communication, cause the concern of many scientists.However, deep ultraviolet LED low external quantum efficiency is still not
It is able to satisfy current application requirement, this is primarily limited to its low internal quantum efficiency and light extraction efficiency.It is dark purple in the prior art
The internal quantum efficiency of outer LED is codetermined by its epitaxial structure and crystal quality, is the weight for influencing deep ultraviolet LED light output power
The factor wanted.Based on conventional deep ultraviolet LED chip epitaxial structure, in the internal quantum efficiency for improving deep ultraviolet LED and light etc. out
Aspect, still there are many spaces that can be promoted, it would be highly desirable to develop a kind of epitaxial structure for improving deep ultraviolet LED light output power.
Summary of the invention
Aiming at the above defects or improvement requirements of the prior art, the present invention provides the epitaxial structure of deep ultraviolet LED a kind of,
Its object is to solve the low technical problem of the optical output power of deep ultraviolet LED in the prior art.
To achieve the above object, according to one aspect of the present invention, the epitaxial structure of deep ultraviolet LED a kind of is provided, is wrapped
Include the Sapphire Substrate being sequentially overlapped from the bottom to top, AlN layers, N-type AlGaN layer, multiple quantum well active layer, superlattices AlGaN gesture
Barrier layer, p-type AlGaN electronic barrier layer and p-type GaN layer；
The superlattices AlGaN potential barrier is by potential barrier Alx1Gay1N and potential well Alx2Gay2N periodic arrangement composition；The gesture
Build Alx1Gay1N with a thickness of 1nm~3nm, the potential well Alx2Gay2N with a thickness of 0.1nm~2nm, the superlattices AlGaN
The overall thickness of barrier layer is 15nm~25nm；
Wherein, 0 < x1< 0.7,0.3 < y1<1；0<x2<x1, y1<y2<1。
Preferably, described AlN layers with a thickness of 1 μm~3 μm.
Preferably, the N-type AlGaN layer with a thickness of 2 μm~4 μm；Wherein, Si doping concentration is 5 × 1018cm-3~8
×1018cm-3。
Preferably, the multiple quantum well active layer by 5~7 periods Alm1Gan1N quantum is built and Alm2Gan2N Quantum Well
Composition, the Alm1Gan1N quantum build with a thickness of 7nm~12nm, the Alm2Gan2N Quantum Well with a thickness of 2nm~4nm；Its
In, 0 < m1< 0.7,0.3 < n1<1；0<m2<m1, n1<n2<1；The Alm1Gan1The Si doping concentration that N quantum is built is 3 × 1018cm-3
~5 × 1018cm-3, the Alm2Gan2N Quantum Well undopes.
Preferably, the p-type AlGaN electronic barrier layer with a thickness of 25nm~50nm, Mg doping concentration is 5 × 1018cm-3~8 × 1018cm-3；The p-type GaN layer with a thickness of 200nm~350nm, Mg doping concentration is 1 × 1019cm-3~3 ×
1019cm-3。
It is another aspect of this invention to provide that a kind of preparation method of the epitaxial structure of above-mentioned deep ultraviolet LED is provided, including
Following steps:
S1, on a sapphire substrate growing AIN layer；
S2, N-type AlGaN layer is grown on the AlN layer, and carry out Si doping；
S3, multiple quantum well active layer is grown in the N-type AlGaN layer；
S4, superlattices AlGaN potential barrier is grown in the multiple quantum well active layer；
The superlattices AlGaN potential barrier is by potential barrier Alx1Gay1N and potential well Alx2Gay2N periodic arrangement composition；The gesture
Build Alx1Gay1N with a thickness of 1nm~3nm, the potential well Alx2Gay2N with a thickness of 0.1nm~2nm, the superlattices AlGaN
The overall thickness of barrier layer is 15nm~25nm；
Wherein, 0 < x1< 0.7,0.3 < y1<1；0<x2<x1, y1<y2<1；
S5, the growing P-type AlGaN electronic barrier layer in the superlattices AlGaN potential barrier, and carry out Mg doping
S6, the growth P-type GaN layer on the p-type AlGaN electronic barrier layer, and carry out Mg doping；
S7, high annealing activate the Mg impurity of doping.
Preferably, in the step S1 growing AIN layer method are as follows: first at 850 DEG C~950 DEG C of low temperature grow 20nm~
The nucleating layer of 30nm, then at 1200 DEG C~1300 DEG C of high temperature continued growth to 1 μm~3 μm.
Preferably, in the step S2 in the growth temperature of N-type AlGaN layer and the step S6 p-type GaN layer growth
Temperature is 1000 DEG C~1100 DEG C.
Preferably, superlattices in the growth temperature of multiple quantum well active layer and the step S4 in the step S3
The growth temperature of AlGaN potential barrier is 1050 DEG C~1150 DEG C.
Preferably, annealing temperature is 850 DEG C~950 DEG C in the step S7, and annealing time is 25min~40min.
In general, through the invention it is contemplated above technical scheme is compared with the prior art, can obtain down and show
Beneficial effect:
(1) since the epitaxial structure of deep ultraviolet LED provided by the invention includes the sapphire lining being sequentially overlapped from the bottom to top
Bottom, AlN layers, N-type AlGaN layer, multiple quantum well active layer, superlattices AlGaN potential barrier, p-type AlGaN electronic barrier layer and P
Type GaN layer, and superlattices AlGaN potential barrier therein is by potential barrier Alx1Gay1N and potential well Alx2Gay2N periodic arrangement composition, energy
The potential barrier of p-type AlGaN electronic barrier layer is effectively improved, the electronics mitigated from multiple quantum well active layer is revealed, and simultaneously
The potential barrier of hole injection is reduced, the note that holoe carrier enters multiple quantum well active layer from p-type AlGaN and p-type GaN layer is improved
Enter efficiency, realize the raising of two kinds of carrier concentrations of electrons and holes in multiple quantum well active layer, is conducive to increase Multiple-quantum
The probability of radiation recombination occurs for electrons and holes carrier in trap active layer, finally improves the internal quantum efficiency of deep ultraviolet LED
And external quantum efficiency, and show as the raising of its optical output power.
(2) preparation method of the epitaxial structure of a kind of deep ultraviolet LED provided by the invention, realizes superlattices AlGaN gesture
The epitaxial growth of barrier layer can prepare the LED epitaxial structure of optical output power raising, can be widely used in deep ultraviolet LED
Epitaxy technique field.And the preparation method process is simple, is easy to regulate and control, and is suitable for large-scale production, has boundless application
Prospect.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of the epitaxial structure of deep ultraviolet LED provided by the invention；
Fig. 2 is the energy band schematic diagram of the LED epitaxial structure of embodiment provided by the invention；
Fig. 3 is the energy band schematic diagram of the LED epitaxial structure of comparative example provided by the invention；
Fig. 4 is the quantum well electronic concentration map of the LED of embodiment provided by the invention and the LED of comparative example；
Fig. 5 is the Quantum Well hole concentration figure of the LED of the embodiment provided by the invention and LED of comparative example；
Fig. 6 is the external quantum efficiency test chart of the LED of embodiment provided by the invention and the LED of comparative example；
Fig. 7 is the optical output power test chart of the LED of embodiment provided by the invention and the LED of comparative example.
In all the appended drawings, identical appended drawing reference is used to denote the same element or structure, in which:
1-P type GaN layer；2-P type AlGaN electronic barrier layer；3- superlattices AlGaN potential barrier；4- multiple quantum well active layer；
5-N type AlGaN layer；6-AlN layers；7- Sapphire Substrate.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in the various embodiments of the present invention described below
Not constituting a conflict with each other can be combined with each other.
As shown in Figure 1, the present invention provides the epitaxial structures of deep ultraviolet LED a kind of, including what is be sequentially overlapped from the bottom to top
Sapphire Substrate 7, AlN layer 6, N-type AlGaN layer 5, multiple quantum well active layer 4, superlattices AlGaN potential barrier 3, p-type AlGaN electricity
Sub- barrier layer 2 and p-type GaN layer 1；
Superlattices AlGaN potential barrier 3 is by potential barrier Alx1Gay1N and potential well Alx2Gay2N periodic arrangement composition；Potential barrier
Alx1Gay1N with a thickness of 1nm~3nm, potential well Alx2Gay2N with a thickness of 0.1nm~2nm, superlattices AlGaN potential barrier 3 it is total
With a thickness of 15nm~25nm；
Wherein, 0 < x1< 0.7,0.3 < y1<1；0<x2<x1, y1<y2<1。
Due to the epitaxial structure of deep ultraviolet LED provided by the invention include the Sapphire Substrate being sequentially overlapped from the bottom to top,
AlN layers, N-type AlGaN layer, multiple quantum well active layer, superlattices AlGaN potential barrier, p-type AlGaN electronic barrier layer and p-type
GaN layer, and superlattices AlGaN potential barrier therein is by potential barrier Alx1Gay1N and potential well Alx2Gay2N periodic arrangement composition, can have
Effect ground improves the potential barrier of P-type electron barrier layer, and the electronics mitigated from multiple quantum well active layer is revealed, and reduces hole simultaneously
The potential barrier of injection improves the injection efficiency that holoe carrier enters multiple quantum well active layer from p-type AlGaN and p-type GaN layer,
The raising for realizing two kinds of carrier concentrations of electrons and holes in multiple quantum well active layer is conducive to increase multiple quantum well active layer
The probability of radiation recombination occurs for middle electrons and holes carrier, finally improves the internal quantum efficiency and outer quantum of deep ultraviolet LED
Efficiency, and show as the raising of its optical output power.
Wherein, AlN layer 6 with a thickness of 1 μm~3 μm.
Wherein, N-type AlGaN layer 5 with a thickness of 2 μm~4 μm；Wherein, Si doping concentration is 5 × 1018cm-3~8 ×
1018cm-3。
Wherein, multiple quantum well active layer 4 by 5~7 periods Alm1Gan1N quantum is built and Alm2Gan2N Quantum Well composition,
Alm1Gan1N quantum build with a thickness of 7nm~12nm, Alm2Gan2N Quantum Well with a thickness of 2nm~4nm；Wherein, 0 < m1< 0.7,
0.3<n1<1；0<m2<m1, n1<n2<1；Alm1Gan1The Si doping concentration that N quantum is built is 3 × 1018cm-3~5 × 1018cm-3,
Alm2Gan2N Quantum Well undopes.
Wherein, p-type AlGaN electronic barrier layer 2 with a thickness of 25nm~50nm, Mg doping concentration is 5 × 1018cm-3~8
×1018cm-3；P-type GaN layer 1 with a thickness of 200nm~350nm, Mg doping concentration is 1 × 1019cm-3~3 × 1019cm-3。
It is another aspect of this invention to provide that a kind of preparation method of the epitaxial structure of above-mentioned deep ultraviolet LED is provided, including
Following steps:
S1, on a sapphire substrate growing AIN layer；
S2, N-type AlGaN layer is grown on AlN layer, and carry out Si doping；
S3, multiple quantum well active layer is grown in N-type AlGaN layer；
S4, superlattices AlGaN potential barrier is grown in multiple quantum well active layer；
Superlattices AlGaN potential barrier is by potential barrier Alx1Gay1N and potential well Alx2Gay2N periodic arrangement composition；Potential barrier
Alx1Gay1N with a thickness of 1nm~3nm, potential well Alx2Gay2N with a thickness of 0.1nm~2nm, superlattices AlGaN potential barrier it is total
With a thickness of 15nm~25nm；
Wherein, 0 < x1< 0.7,0.3 < y1<1；0<x2<x1, y1<y2<1；
S5, the growing P-type AlGaN electronic barrier layer in superlattices AlGaN potential barrier, and carry out Mg doping；
S6, the growth P-type GaN layer on p-type AlGaN electronic barrier layer, and carry out Mg doping；
S7, high annealing activate the Mg impurity of doping.
Wherein, in step S1 growing AIN layer method are as follows: 20nm~30nm is first grown at 850 DEG C~950 DEG C of low temperature
Nucleating layer, then to 1 μm~3 μm, high temperature fast-growth help to obtain smooth for continued growth at 1200 DEG C~1300 DEG C of high temperature
Material surface, improve crystalline quality of material.
Wherein, the growth temperature of p-type GaN layer is in the growth temperature of N-type AlGaN layer and step S6 in step S2
1000 DEG C~1100 DEG C.
Wherein, superlattices AlGaN potential barrier in the growth temperature of multiple quantum well active layer and step S4 in step S3
Growth temperature is 1050 DEG C~1150 DEG C.
Wherein, annealing temperature is 850 DEG C~950 DEG C in step S7, and annealing time is 25min~40min.
The preparation method provided by the invention, realizes the epitaxial growth of superlattices AlGaN potential barrier, can prepare light
The LED epitaxial structure that output power improves, can be widely used in deep ultraviolet LED epitaxy technique field.And the preparation method stream
Journey is simple, is easy to regulate and control, and is suitable for large-scale production, has boundless application prospect.
Following table is the specific embodiment of LED epitaxial structure proposed by the present invention and preparation method.
The specific embodiment proposed by the present invention of table 1
Because of the external quantum efficiency and light output function of the LED epitaxial structure and LED chip that are prepared according to embodiment 1-3
Rate measurement result difference is little, is had below using the experimental result of embodiment 2 as the embodiment of the present invention and comparative example
Body explanation.Wherein, embodiment is superlattices AlGaN potential barrier, and comparative example is intrinsic-barrier layer.
Embodiment
Preparation method and obtained epitaxial structure are as follows:
S1, on a sapphire substrate growth thickness are 1.5 μm AlN layers: the nucleation of 25nm is first grown at 880 DEG C of low temperature
Layer, then at 1250 DEG C of high temperature continued growth to 1.5 μm.
S2, the N-type AlGaN layer that 2.5 μ m thicks are grown on AlN layer, and carry out Si doping, doping concentration is 5 ×
1018cm-3, growth temperature is 1050 DEG C；
S3, it grows in N-type AlGaN layer by the Al of the 10nm in 5 periods0.55Ga0.45N quantum is built with 3nm's
Al0.45Ga0.55N Quantum Well forms multiple quantum well active layer, and growth temperature is 1100 DEG C, and the Si doping concentration 5 that quantum is built ×
1018cm-3, Quantum Well undopes；
S4, the superlattices AlGaN potential barrier that overall thickness is 15nm, superlattices AlGaN are grown in multiple quantum well active layer
Barrier layer by 1nm Al0.55Ga0.45The Al of N and 1nm0.5Ga0.5N periodic arrangement composition, growth temperature are 1100 DEG C；
S5, growth thickness is the p-type AlGaN electronic barrier layer of 25nm in superlattices AlGaN potential barrier, and carries out Mg and mix
Miscellaneous, Mg doping concentration is 5 × 1018cm-3；
S6, growth thickness is the p-type GaN layer of 300nm on p-type AlGaN electronic barrier layer, and carries out Mg doping, and Mg mixes
Miscellaneous concentration is 3 × 1019cm-3, growth temperature is 1050 DEG C；
S7, high annealing activate Mg impurity, and annealing temperature is 880 DEG C, annealing time 30min.
Comparative example
Preparation method and obtained epitaxial structure are as follows:
S1, on a sapphire substrate growth thickness are 1.5 μm AlN layers: the nucleation of 25nm is first grown at 880 DEG C of low temperature
Layer, then at 1250 DEG C of high temperature continued growth to 1.5 μm.
S2, the N-type AlGaN layer that 2.5 μ m thicks are grown on AlN layer, and carry out Si doping, doping concentration is 5 ×
1018cm-3, growth temperature is 1050 DEG C；
S3, it grows in N-type AlGaN layer by the Al of the 10nm in 5 periods0.55Ga0.45N quantum is built with 3nm's
Al0.45Ga0.55N Quantum Well forms multiple quantum well active layer, and growth temperature is 1100 DEG C, and the Si doping concentration 5 that quantum is built ×
1018cm-3, Quantum Well undopes；
S4, the AlGaN intrinsic-barrier layer (one-component) that overall thickness is 15nm, growth are grown in multiple quantum well active layer
Temperature is 1100 DEG C；
S5, growth thickness is the p-type AlGaN electronic barrier layer of 25nm on intrinsic-barrier layer, and carries out Mg doping, and Mg mixes
Miscellaneous concentration is 5 × 1018cm-3；
S6, growth thickness is the p-type GaN layer of 300nm on p-type AlGaN electronic barrier layer, and carries out Mg doping, and Mg mixes
Miscellaneous concentration is 3 × 1019cm-3, growth temperature is 1050 DEG C；
S7, high annealing activate Mg impurity, and annealing temperature is 880 DEG C, annealing time 30min.
Used apparatus for preparation is MOCVD, the used source Ga when above-described embodiment and comparative example preparation LED epitaxial layer
For trimethyl gallium TMGa, the source Al is trimethyl gallium TMAl, and nitrogen source is ammonia NH3, carrier gas is hydrogen H2, the doped source of N-type and p-type
Respectively silane SiH4With two luxuriant magnesium Cp2Mg。
Experimental result
As shown in Figure 2,3, the energy band diagram of the LED epitaxial structure of the embodiment and comparative example that are calculated for simulation, with comparative example
In intrinsic-barrier layer compare, the superlattices barrier layer in embodiment has the effective potential barrier of higher electronics and lower hole
Effective potential barrier is conducive to the injection efficiency for mitigating the leakage of electronics and enhancing hole simultaneously.
As shown in Figure 4,5, the quantum well electronic concentration map of the LED of the embodiment and comparative example that calculate for simulation and hole are dense
Degree figure, compared with comparative example, the LED of embodiment has higher electron concentration in Quantum Well, thus has higher light out
Efficiency obtains higher light power.
Optical output power and external quantum efficiency measurement
As shown in Figure 6,7, the present invention measure the LED chip that embodiment and comparative example are made external quantum efficiency and
The curve graph that optical output power changes with Injection Current.As seen from the figure, under the conditions of 200 milliamperes of Injection Current, with comparative example
The LED chip of middle preparation is compared, and the optical output power of the LED chip of embodiment promotes 16.98%, at the same external quantum efficiency also from
51.10% increases 54.48%.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to
The limitation present invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should all include
Within protection scope of the present invention.
Claims (10)
1. a kind of epitaxial structure of deep ultraviolet LED, which is characterized in that including be sequentially overlapped from the bottom to top Sapphire Substrate, AlN
Layer, N-type AlGaN layer, multiple quantum well active layer, superlattices AlGaN potential barrier, p-type AlGaN electronic barrier layer and p-type GaN
Layer；
The superlattices AlGaN potential barrier is by potential barrier Alx1Gay1N and potential well Alx2Gay2N periodic arrangement composition；The potential barrier
Alx1Gay1N with a thickness of 1nm~3nm, the potential well Alx2Gay2N with a thickness of 0.1nm~2nm, the superlattices AlGaN gesture
The overall thickness of barrier layer is 15nm~25nm；
Wherein, 0 < x1< 0.7,0.3 < y1<1；0<x2<x1, y1<y2<1。
2. the epitaxial structure of deep ultraviolet LED as described in claim 1, which is characterized in that described AlN layers with a thickness of 1 μm~3
μm。
3. the epitaxial structure of deep ultraviolet LED as described in claim 1, which is characterized in that the N-type AlGaN layer with a thickness of 2
μm~4 μm；Wherein, Si doping concentration is 5 × 1018cm-3~8 × 1018cm-3。
4. the epitaxial structure of deep ultraviolet LED as described in claim 1, which is characterized in that the multiple quantum well active layer by 5~
The Al in 7 periodsm1Gan1N quantum is built and Alm2Gan2N Quantum Well composition, the Alm1Gan1N quantum build with a thickness of 7nm~
12nm, the Alm2Gan2N Quantum Well with a thickness of 2nm~4nm；Wherein, 0 < m1< 0.7,0.3 < n1<1；0<m2<m1, n1<n2<1；
The Alm1Gan1The Si doping concentration that N quantum is built is 3 × 1018cm-3~5 × 1018cm-3, the Alm2Gan2N Quantum Well is not mixed
It is miscellaneous.
5. the epitaxial structure of deep ultraviolet LED as described in claim 1, which is characterized in that the p-type AlGaN electronic barrier layer
With a thickness of 25nm~50nm, Mg doping concentration is 5 × 1018cm-3~8 × 1018cm-3；The p-type GaN layer with a thickness of
200nm~350nm, Mg doping concentration are 1 × 1019cm-3~3 × 1019cm-3。
6. a kind of preparation method of the epitaxial structure of the deep ultraviolet LED as described in any one of claim 1-5, feature exist
In, comprising the following steps:
S1, on a sapphire substrate growing AIN layer；
S2, N-type AlGaN layer is grown on the AlN layer, and carry out Si doping；
S3, multiple quantum well active layer is grown in the N-type AlGaN layer；
S4, superlattices AlGaN potential barrier is grown in the multiple quantum well active layer；
The superlattices AlGaN potential barrier is by potential barrier Alx1Gay1N and potential well Alx2Gay2N periodic arrangement composition；The potential barrier
Alx1Gay1N with a thickness of 1nm~3nm, the potential well Alx2Gay2N with a thickness of 0.1nm~2nm, the superlattices AlGaN gesture
The overall thickness of barrier layer is 15nm~25nm；
Wherein, 0 < x1< 0.7,0.3 < y1<1；0<x2<x1, y1<y2<1；
S5, the growing P-type AlGaN electronic barrier layer in the superlattices AlGaN potential barrier, and carry out Mg doping
S6, the growth P-type GaN layer on the p-type AlGaN electronic barrier layer, and carry out Mg doping；
S7, high annealing activate the Mg impurity of doping.
7. the preparation method of the epitaxial structure of deep ultraviolet LED as claimed in claim 6, which is characterized in that in the step S1
The method of growing AIN layer are as follows: the nucleating layer of 20nm~30nm is first grown at 850 DEG C~950 DEG C of low temperature, then at 1200 DEG C of high temperature
Continued growth is to 1 μm~3 μm at~1300 DEG C.
8. the preparation method of the epitaxial structure of deep ultraviolet LED as claimed in claim 6, which is characterized in that N in the step S2
The growth temperature of p-type GaN layer is 1000 DEG C~1100 DEG C in the growth temperature of type AlGaN layer and the step S6.
9. the preparation method of the epitaxial structure of deep ultraviolet LED as claimed in claim 6, which is characterized in that in the step S3
The growth temperature of superlattices AlGaN potential barrier is 1050 DEG C in the growth temperature of multiple quantum well active layer and the step S4
~1150 DEG C.
10. the preparation method of the epitaxial structure of deep ultraviolet LED as claimed in claim 6, which is characterized in that in the step S7
Annealing temperature is 850 DEG C~950 DEG C, and annealing time is 25min~40min.
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