CN113838951A - AlGaN-based deep ultraviolet LED epitaxial structure of In-Si co-doped quantum well and preparation method thereof - Google Patents
AlGaN-based deep ultraviolet LED epitaxial structure of In-Si co-doped quantum well and preparation method thereof Download PDFInfo
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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Abstract
The invention discloses an AlGaN-based deep ultraviolet LED epitaxial structure of an In-Si co-doped quantum well and a preparation method thereof. In-Si co-doped atoms are introduced into the multi-quantum well region, annihilation of non-radiative recombination centers of the multi-quantum well active region can be realized, radiative recombination luminescence of the active region is enhanced, internal quantum efficiency of a deep ultraviolet LED epitaxial structure is improved, meanwhile, the In-Si atoms can clamp dislocation migration at high temperature, and reliability of a device under long-time working conditions is improved.
Description
Technical Field
The invention belongs to the technical field of deep ultraviolet LED epitaxial structures, and particularly relates to an In-Si co-doped quantum well AlGaN-based deep ultraviolet LED epitaxial structure and a preparation method thereof.
Background
At present, the electro-optical efficiency of the deep ultraviolet LED is generally between 3% and 5%, mainly because the AlN template has poor crystal quality, low quantum efficiency in the quantum well and low light extraction efficiency, wherein the internal quantum efficiency is generally below 80%, a certain promotion space exists, and the main factors influencing the internal quantum efficiency are as follows: the strong polarization electric field causes the overlapping of the cavity and the electron wave function in the quantum well to be reduced, and the radiation recombination probability is reduced; dislocations in the AlN template growing on the sapphire substrate extend to the quantum well region to reduce radiation composite luminescence; the density of point defects in the low AlN component quantum well is higher, so that the non-radiative recombination center is increased; the confinement capability of carriers is weak, electrons are easy to leak, and meanwhile, holes are insufficiently injected, so that the radiative recombination is less. The non-radiative recombination centers in the quantum well are a main factor influencing the quantum efficiency in the quantum well at present, which is related to the reliability of the subsequent device in the working process, and the non-radiative recombination centers are further increased under high current and high temperature, so that the electro-optic efficiency of the device is reduced, and therefore, the problem in the aspects of structural design and growth is urgently needed to be solved.
The publication number "CN 111063753B," entitled "AlGaN based deep ultraviolet LED epitaxial structure using Mg doped quantum well to enhance luminous efficiency and method for manufacturing the same," discloses an AlGaN based deep ultraviolet LED epitaxial structure using Mg doped quantum well to enhance luminous efficiency and method for manufacturing the same, which performs Mg impurity doping in the middle third of the well layer of the multiple quantum well active light emitting layer of the LED to improve the internal quantum efficiency and light extraction efficiency of the LED. Although the Mg-doped multi-quantum well structure is adopted to inhibit the quantum confinement Stark effect, the quality of the grown material is poor because of relatively low Al component, a large number of non-radiative recombination centers exist, and the reliability is relatively not ideal.
Disclosure of Invention
In view of the above disadvantages, the present invention provides an In-Si co-doped quantum well AlGaN-based deep ultraviolet LED epitaxial structure and a method for manufacturing the same.
In order to achieve the purpose, the technical scheme provided by the invention is as follows:
the substrate is sapphire or AlN single crystal and comprises a substrate, a low-temperature AlGaN buffer layer, a high-temperature AlN layer, an AlGaN/AlGaN superlattice stress buffer layer, an n-type AlGaN layer, an active light emitting region AlGaN/AlGaN multi-quantum well, an electron blocking p-type AlGaN layer, a current expanding p-type AlGaN layer and a p-type GaN contact layer which are sequentially distributed from bottom to top, the active light emitting region AlGaN/AlGaN multi-quantum well comprises a barrier layer and a well layer which are periodically and repeatedly overlapped, and the well layer is subjected to In-Si co-doping.
In a preferred embodiment of the present invention, the composition of n-type or p-type AlGaN is 30 to 85%. The component of the quantum barrier of the active light emitting area AlGaN/AlGaN multi-quantum well is 40-65%. The component of the quantum well of the active light emitting area AlGaN/AlGaN multi-quantum well is 40-65%. The thickness of the barrier layer and the well layer is 1-20 nm.
A preparation method of the AlGaN-based deep ultraviolet LED epitaxial structure of the In-Si co-doped quantum well comprises the following steps:
(1) cleaning treatment: subjecting the substrate to a temperature of 1200-1400 deg.C and a pressure of 75-200 torr, H2And N2Cleaning for 1-10 min under the condition of taking the mixed gas as carrier gas;
(2) growing a low-temperature AlN buffer layer: h at a temperature of 900-1000 ℃, a pressure of 20-80 torr, a V/III ratio of 100-40002And N2Growing a low-temperature AlN buffer layer on the substrate under the condition that the mixed gas is used as a carrier gas;
(3) growing a high-temperature AlN layer: h at a temperature of 1100 to 1400 ℃, a pressure of 20 to 80torr, a V/III ratio of 100to 40002And N2Growing a high-temperature AlN layer on the low-temperature AlN buffer layer under the condition that the mixed gas is used as a carrier gas;
(4) growing an AlGaN/AlGaN superlattice stress regulation layer: h at a temperature of 1100 to 1400 ℃, a pressure of 20 to 80torr, a V/III ratio of 100to 40002And N2Growing an AlGaN/AlGaN superlattice stress regulation layer on the high-temperature AlN layer under the condition that the mixed gas is used as a carrier gas;
(5) growing an n-type AlGaN layer: h at a temperature of 1100 to 1400 ℃, a pressure of 20 to 80torr, a V/III ratio of 100to 40002And N2Mixed gas is used as carrier gas, and SiH is simultaneously introduced4A source, wherein an n-type AlGaN layer grows on the AlGaN/AlGaN superlattice stress regulation layer;
(6) growing an active light emitting area AlGaN/AlGaN multiple quantum well: h at a temperature of 1100 to 1400 ℃, a pressure of 20 to 80torr, a V/III ratio of 100to 40002And N2Mixed gas is used as carrier gas, an active light-emitting area AlGaN/AlGaN multiple quantum well grows on the n-type AlGaN layer, the number of quantum well cycles is 4-8, and an In source and an SiH4 source are introduced In the process of growing the well layer for co-doping;
(7) growing an electron blocking p-type AlGaN layer: h at a temperature of 1200-1400 ℃, a pressure of 100-200 torr, a V/III ratio of 100-40002And N2Mixed gas is used as carrier gas, and simultaneously an Mg source is introduced, so that an electron blocking p-type AlGaN layer grows on the AlGaN/AlGaN multi-quantum well of the active light emitting region;
(8) growing a current spreading p-type AlGaN layer: h at a temperature of 1200-1400 ℃, a pressure of 100-200 torr, a V/III ratio of 100-40002And N2Mixed gas is used as carrier gas, and simultaneously an Mg source is introduced, so that a current expansion p-type AlGaN layer grows on the electron blocking p-type AlGaN layer;
(9) growing a p-type GaN contact layer: h at a temperature of 1200-1400 ℃, a pressure of 100-200 torr, a V/III ratio of 100-40002And N2The mixed gas is used as carrier gas, and an Mg source is introduced at the same time to obtain an AlGaN-based deep ultraviolet LED epitaxial structure of an In-Si co-doped quantum well;
(10) annealing: the AlGaN-based deep ultraviolet LED epitaxial structure of the In-Si co-doped quantum well is subjected to temperature of 600-1100 ℃ and pressure of 100-200 torr2And annealing for 2-30 minutes in an air atmosphere.
The invention has the beneficial effects that: in the invention, In-Si co-doped atoms are introduced into the multi-quantum well region, so that annihilation of non-radiative recombination centers of an active region of the multi-quantum well can be realized, internal quantum efficiency can be improved as a Mg-doped quantum well, radiative recombination luminescence of the active region is enhanced, internal quantum efficiency of a deep ultraviolet LED epitaxial structure is improved, meanwhile, the In-Si atoms can clamp dislocation migration at high temperature, increase of the non-radiative recombination centers of a device In a long-time working process can be inhibited, the non-radiative recombination centers are reduced, and reliability of the device under a long-time working condition is improved.
The invention is further described with reference to the following figures and examples.
Drawings
FIG. 1 is a schematic structural diagram of an In-Si co-doped quantum well AlGaN-based deep ultraviolet LED epitaxial structure of the present invention;
fig. 2 is a schematic structural view of an AlGaN/AlGaN region in the multiple quantum well active light emitting region of fig. 1;
FIG. 3 is a timing diagram for epitaxial growth of an In-Si co-doped quantum well structure;
FIG. 4 is a graph of experimental light output power versus undoped quantum well AlGaN based deep ultraviolet LED prepared In example 1;
fig. 5 is a graph of the experimental 168 hour light decay comparison of the In-Si co-doped and undoped quantum well AlGaN based deep ultraviolet LEDs prepared In example 1.
Detailed Description
Example 1: the preparation method of the In-Si co-doped quantum well AlGaN-based deep ultraviolet LED epitaxial structure provided by the embodiment includes the following steps:
(1) the C-plane sapphire is used as a substrate and placed in a graphite carrying disc of MOCVD (metal organic chemical vapor deposition), and the temperature is 1200-1400 ℃, the pressure is 75-200 torr, and the H is2And N2Cleaning for 5 minutes under the condition that the mixed gas is used as carrier gas;
(2) h at 950 ℃, 80torr pressure and a V/III ratio of 10002And N2Introducing Al source and ammonia gas into the reaction chamber under the condition that the mixed gas is used as carrier gas, and growing a low-temperature AlN buffer layer with the thickness of 300 nm;
(3) h at a temperature of 1300 ℃, a pressure of 80torr and a V/III ratio of 10002And N2Introducing Al source and ammonia gas into the reaction chamber under the condition that the mixed gas is used as carrier gas, and growing a high-temperature AlN layer with the thickness of 2500 nm;
(4) introducing Ga source, Al source and ammonia gas into a reaction chamber under the conditions that the temperature is 1250 ℃, the pressure is 20-80 torr, the V/III ratio is 2000, the H2 and N2 mixed gas is used as carrier gas, and growing an AlGaN/AlGaN superlattice stress regulation layer, wherein the Al components are 80% and 60%, the thicknesses are 1.5nm and 2nm respectively, and the total thickness is 500 nm;
(5) h at 1200 deg.C, 80torr pressure and V/III ratio of 20002And N2Mixed gas is used as carrier gas, SiH is simultaneously introduced into the reaction chamber4Growing an n-type AlGaN layer by using a source, a Ga source, an Al source and ammonia gas, wherein the total thickness is 1500 nm;
(6) at the temperature of 1200 ℃, the pressure of 80torr, the V/III ratio of 3000, H2 and N2 mixed gas as carrier gas, Ga source, Al source and ammonia gas are introduced into a reaction chamber, an active light emitting region AlGaN/AlGaN multiple quantum well is grown, the number of quantum well cycles is 4-8, In source and SiH are introduced In the process of growing a well layer4Co-doping the source, wherein the thicknesses of the trap and the barrier are respectively 100 nm; the doping concentration of the quantum well region In is 5e19cm-3Doping concentration of Si is 5e17cm-3；
(7) H at 1200 deg.C, 200torr pressure and V/III ratio of 20002And N2The mixed gas is used as carrier gas, Mg source, Al source and ammonia gas are simultaneously introduced into the reaction chamber, and an electron blocking p-type AlGaN layer is grown, wherein the thickness of the electron blocking p-type AlGaN layer is 12 nm;
(8) at temperature1200 ℃, 200torr pressure, 2000V/III ratio, H2And N2The mixed gas is used as carrier gas, Mg source, Al source and ammonia gas are simultaneously introduced into the reaction chamber, and a current expansion p-type AlGaN layer is grown, wherein the thickness of the current expansion p-type AlGaN layer is 300 nm;
(9) h at a temperature of 1000 ℃, a pressure of 200torr and a V/III ratio of 10002And N2The mixed gas is used as carrier gas, Mg source, Al source and ammonia gas are simultaneously introduced into the reaction chamber, and a p-type GaN contact layer is grown, wherein the thickness is 100 nm; (ii) a
(10) At 950 ℃ and 100torr N2High-temperature annealing was performed for 10 minutes in an air atmosphere.
Example 2: the preparation method of the In-Si co-doped quantum well AlGaN-based deep ultraviolet LED epitaxial structure provided by the embodiment includes the following steps:
(1) the C-plane sapphire is used as a substrate and placed in a graphite carrying disc of MOCVD (metal organic chemical vapor deposition), and the temperature is 1200-1400 ℃, the pressure is 75-200 torr, and the H is2And N2Cleaning for 5 minutes under the condition that the mixed gas is used as carrier gas;
(2) h at 950 ℃, 80torr pressure and a V/III ratio of 10002And N2Introducing Al source and ammonia gas into the reaction chamber under the condition that the mixed gas is used as carrier gas, and growing a low-temperature AlN buffer layer with the thickness of 300 nm;
(3) h at a temperature of 1300 ℃, a pressure of 80torr and a V/III ratio of 10002And N2Introducing Al source and ammonia gas into the reaction chamber under the condition that the mixed gas is used as carrier gas, and growing a high-temperature AlN layer with the thickness of 2500 nm;
(4) h, at 1250 ℃, 20-80 torr of pressure and 2000 of V/III ratio2And N2Introducing a Ga source, an Al source and ammonia gas into a reaction chamber under the condition that the mixed gas is used as a carrier gas, and growing an AlGaN/AlGaN superlattice stress regulation layer, wherein the Al components are respectively 80% and 60%, the thicknesses are respectively 1.5nm and 2nm, and the total thickness is 500 nm;
(5) h at 1200 deg.C, 80torr pressure and V/III ratio of 20002And N2The mixed gas is used as carrier gas, SiH4 source, Ga source, Al source and ammonia gas are simultaneously introduced into the reaction chamber, and an n-type AlGaN layer grows, wherein the total thickness is 1500 nm;
(6) at a temperature of 1200 ℃, a pressure of 80torr, a V/III ratio of 3000, H2And N2The mixed gas is used as carrier gas, Ga source, Al source and ammonia gas are introduced into the reaction chamber, an active light emitting region AlGaN/AlGaN multi-quantum well grows, the number of quantum well cycles is 4-8, and In source and SiH are introduced In the process of growing the well layer4Co-doping the source, wherein the thicknesses of the trap and the barrier are respectively 100 nm; the doping concentration of In is 5e19cm-3Doping concentration of Si is 5e17cm-3；
In the active region light emitting region of embodiment 2, different from embodiment 1, In — Si is doped only In the region 1/3 In the middle of the quantum well, and the doping concentration of In is 5e19cm-3Doping concentration of Si is 5e17cm-3；
Other types of variations:
A. in is doped In 1/3 regions at the front and the rear of the quantum well, a Si middle 1/3 region is doped, and the doping concentration of the In is 5e19cm-3Doping concentration of Si is 5e17cm-3；
B. Si is doped In 1/3 regions at the front and the back of the quantum well, In is doped In the middle 1/3 region, and the doping concentration of In is 5e19cm-3Doping concentration of Si is 5e17cm-3；
C. In is doped In 1/3 region In the middle of the quantum well, the rest is undoped, and the doping concentration of the In is 5e19cm-3；
D. Si is doped in the 1/3 middle region of the quantum well, the rest is undoped, and the doping concentration of the Si is 5e17cm-3；
(7) H at 1200 deg.C, 200torr pressure and V/III ratio of 20002And N2The mixed gas is used as carrier gas, Mg source, Al source and ammonia gas are simultaneously introduced into the reaction chamber, and an electron blocking p-type AlGaN layer is grown, wherein the thickness of the electron blocking p-type AlGaN layer is 12 nm;
(8) h at 1200 deg.C, 200torr pressure and V/III ratio of 20002And N2The mixed gas is used as carrier gas, Mg source, Al source and ammonia gas are simultaneously introduced into the reaction chamber, and a current expansion p-type AlGaN layer is grown, wherein the thickness of the current expansion p-type AlGaN layer is 300 nm;
(9) h at a temperature of 1000 ℃, a pressure of 200torr and a V/III ratio of 10002And N2Mixed gas is used as carrier gas, and Mg is introduced into the reaction chamber simultaneouslyGrowing a p-type GaN contact layer with the thickness of 100nm by using a source, an Al source and ammonia gas; (ii) a
(10) At 950 ℃ and 100torr N2High-temperature annealing was performed for 10 minutes in an air atmosphere.
The above description is only a preferred embodiment of the present invention, and does not limit the technical scope of the present invention. Therefore, any modifications, equivalent changes and modifications made to the above embodiments according to the technical spirit of the present invention are within the scope of the technical solution of the present invention.
Referring to fig. 4, a graph of experimental light output power versus undoped quantum well AlGaN based deep ultraviolet LEDs prepared In example 1 with In-Si co-doping. Referring to fig. 5, a graph of the 168 hour light decay for the experiment prepared In example 1 with In-Si co-doped and undoped quantum well AlGaN based deep ultraviolet LEDs. Through the graph In fig. 4 and fig. 5, it can be known that In-Si co-doped atoms are introduced into the multiple quantum well region, so that radiation recombination luminescence of the active region can be enhanced, the internal quantum efficiency of the deep ultraviolet LED epitaxial structure is improved, meanwhile, the In-Si atoms can clamp dislocation migration at high temperature, the light decay rate is low, and the reliability of the device under long-time working conditions can be improved.
Variations and modifications to the above-described embodiments may occur to those skilled in the art, which fall within the scope and spirit of the above description. Therefore, the present invention is not limited to the specific embodiments disclosed and described above, and some modifications and variations of the present invention should fall within the scope of the claims of the present invention. In addition, although specific terms are employed herein, they are used in a generic and descriptive sense only and not for purposes of limitation, the use of the same or similar structures and methods being contemplated as within the scope of the invention.
Claims (10)
1. The utility model provides an AlGaN base deep ultraviolet LED epitaxial structure of In-Si co-doped quantum well which includes the substrate, its characterized In that: the LED device also comprises a low-temperature AlGaN buffer layer, a high-temperature AlN layer, an AlGaN/AlGaN superlattice stress buffer layer, an n-type AlGaN layer, an active light emitting region AlGaN/AlGaN multi-quantum well, an electron blocking p-type AlGaN layer, a current expanding p-type AlGaN layer and a p-type GaN contact layer; the substrate, the low-temperature AlGaN buffer layer, the high-temperature AlN layer, the AlGaN/AlGaN superlattice stress buffer layer, the n-type AlGaN layer, the active light emitting area AlGaN/AlGaN multi-quantum well, the electron blocking p-type AlGaN layer, the current expanding p-type AlGaN layer and the p-type GaN contact layer are sequentially distributed from bottom to top, the active light emitting area AlGaN/AlGaN multi-quantum well comprises a barrier layer and a well layer which are periodically overlapped In a repeated mode, and the well layer is subjected to In-Si co-doping.
2. The In-Si co-doped quantum well AlGaN-based deep ultraviolet LED epitaxial structure of claim 1, characterized In that: the substrate is sapphire or AlN single crystal.
3. The In-Si co-doped quantum well AlGaN-based deep ultraviolet LED epitaxial structure of claim 1, characterized In that: the component of the quantum barrier of the active light emitting area AlGaN/AlGaN multi-quantum well is 40-65%.
4. The In-Si co-doped quantum well AlGaN-based deep ultraviolet LED epitaxial structure of claim 1, characterized In that: the component of the quantum well of the active light emitting area AlGaN/AlGaN multi-quantum well is 40-65%.
5. The In-Si co-doped quantum well AlGaN-based deep ultraviolet LED epitaxial structure of claim 1, characterized In that: the thickness of the barrier layer and the well layer is 1-20 nm.
6. The preparation method of the In-Si co-doped quantum well AlGaN-based deep ultraviolet LED epitaxial structure of any one of claims 1 to 5, characterized by comprising the following steps of:
(1) cleaning treatment: cleaning the substrate;
(2) growing a low-temperature AlN buffer layer: growing a low-temperature AlN buffer layer on the substrate;
(3) growing a high-temperature AlN layer: growing a high-temperature AlN layer on the low-temperature AlN buffer layer;
(4) growing an AlGaN/AlGaN superlattice stress regulation layer: growing an AlGaN/AlGaN superlattice stress regulation layer on the high-temperature AlN layer;
(5) growing an n-type AlGaN layer: growing an n-type AlGaN layer on the AlGaN/AlGaN superlattice stress regulation layer;
(6) growing an active light emitting area AlGaN/AlGaN multiple quantum well: h at a temperature of 1100 to 1400 ℃, a pressure of 20 to 80torr, a V/III ratio of 100to 40002And N2Mixed gas is used as carrier gas, an active light-emitting area AlGaN/AlGaN multiple quantum well grows on the n-type AlGaN layer, the number of quantum well cycles is 4-8, and an In source and an SiH4 source are introduced In the process of growing the well layer for co-doping;
(7) growing an electron blocking p-type AlGaN layer: growing an electron blocking p-type AlGaN layer on the AlGaN/AlGaN multi-quantum well of the active light emitting region;
(8) growing a current spreading p-type AlGaN layer: growing a current expansion p-type AlGaN layer on the electron blocking p-type AlGaN layer;
(9) growing a p-type GaN contact layer: growing a p-type GaN contact layer on the current expansion p-type AlGaN layer to obtain an AlGaN-based deep ultraviolet LED epitaxial structure of an In-Si co-doped quantum well;
(10) annealing: and annealing the AlGaN-based deep ultraviolet LED epitaxial structure of the In-Si co-doped quantum well.
7. The method of claim 6, wherein: the step (1) comprises the following steps: subjecting the substrate to a temperature of 1200-1400 deg.C and a pressure of 75-200 torr, H2And N2Cleaning for 1-10 min under the condition of using the mixed gas as carrier gas.
8. The method of claim 6, wherein: the step (2) comprises the following steps: h at a temperature of 900-1000 ℃, a pressure of 20-80 torr, a V/III ratio of 100-40002And N2Growing a low-temperature AlN buffer layer on the substrate under the condition that the mixed gas is used as a carrier gas;
the step (3) comprises the following steps: at a temperature of 1100 to 1400 ℃ and a pressureA force of 20 to 80torr, a V/III ratio of 100to 4000, and H2And N2Growing a high-temperature AlN layer on the low-temperature AlN buffer layer under the condition that the mixed gas is used as a carrier gas;
the step (4) comprises the following steps: h at a temperature of 1100 to 1400 ℃, a pressure of 20 to 80torr, a V/III ratio of 100to 40002And N2Growing an AlGaN/AlGaN superlattice stress regulation layer on the high-temperature AlN layer under the condition that the mixed gas is used as a carrier gas;
the step (5) comprises the following steps: h at a temperature of 1100 to 1400 ℃, a pressure of 20 to 80torr, a V/III ratio of 100to 40002And N2Mixed gas is used as carrier gas, and SiH is simultaneously introduced4And the n-type AlGaN layer grows on the AlGaN/AlGaN superlattice stress regulation layer.
9. The method of claim 6, wherein: the step (7) comprises the following steps: h at a temperature of 1200-1400 ℃, a pressure of 100-200 torr, a V/III ratio of 100-40002And N2Mixed gas is used as carrier gas, and simultaneously an Mg source is introduced, so that an electron blocking p-type AlGaN layer grows on the AlGaN/AlGaN multi-quantum well of the active light emitting region;
the step (8) comprises the steps of: h at a temperature of 1200-1400 ℃, a pressure of 100-200 torr, a V/III ratio of 100-40002And N2Mixed gas is used as carrier gas, and simultaneously an Mg source is introduced, so that a current expansion p-type AlGaN layer grows on the electron blocking p-type AlGaN layer;
the step (9) comprises the steps of: h at a temperature of 1200-1400 ℃, a pressure of 100-200 torr, a V/III ratio of 100-40002And N2And mixed gas is used as carrier gas, and simultaneously an Mg source is introduced, so that an electron blocking p-type AlGaN layer grows on the AlGaN/AlGaN multi-quantum well of the active light emitting region.
10. The method of claim 6, wherein: the step (10) comprises the steps of: the AlGaN-based deep ultraviolet LED epitaxial structure of the In-Si co-doped quantum well is subjected to temperature of 600-1100 ℃ and pressure of 100-200 torr2And annealing for 2-30 minutes in an air atmosphere.
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| CN114695610A (en) * | 2022-05-31 | 2022-07-01 | 江西兆驰半导体有限公司 | GaN-based LED epitaxial wafer, epitaxial growth method and LED chip |
| CN115207176A (en) * | 2022-09-15 | 2022-10-18 | 江西兆驰半导体有限公司 | Epitaxial structure for deep ultraviolet LED, preparation method of epitaxial structure and LED |
| CN115332408A (en) * | 2022-10-18 | 2022-11-11 | 江西兆驰半导体有限公司 | Deep ultraviolet LED epitaxial wafer, preparation method thereof and LED |
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| CN114695610B (en) * | 2022-05-31 | 2023-02-28 | 江西兆驰半导体有限公司 | GaN-based LED epitaxial wafer, epitaxial growth method and LED chip |
| CN115207176A (en) * | 2022-09-15 | 2022-10-18 | 江西兆驰半导体有限公司 | Epitaxial structure for deep ultraviolet LED, preparation method of epitaxial structure and LED |
| CN115207176B (en) * | 2022-09-15 | 2022-12-30 | 江西兆驰半导体有限公司 | Epitaxial structure for deep ultraviolet LED, preparation method of epitaxial structure and LED |
| CN115332408A (en) * | 2022-10-18 | 2022-11-11 | 江西兆驰半导体有限公司 | Deep ultraviolet LED epitaxial wafer, preparation method thereof and LED |
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