CN109599466A - A kind of dual-wavelength LEDs epitaxial structure and preparation method thereof - Google Patents
A kind of dual-wavelength LEDs epitaxial structure and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title description 5
- 239000004065 semiconductor Substances 0.000 claims abstract description 68
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 238000004519 manufacturing process Methods 0.000 claims abstract description 16
- 229910002704 AlGaN Inorganic materials 0.000 claims description 36
- 230000012010 growth Effects 0.000 claims description 25
- 238000009792 diffusion process Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 abstract 22
- 239000011229 interlayer Substances 0.000 abstract 1
- 229910002601 GaN Inorganic materials 0.000 description 63
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 238000010792 warming Methods 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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Abstract
This application discloses a kind of dual-wavelength LEDs epitaxial structures, including substrate；The first n type semiconductor layer positioned at the first side of substrate；Deviate from the first luminescent layer of one side of substrate positioned at the first n type semiconductor layer；Deviate from the P-type layer of the first n type semiconductor layer side positioned at the first luminescent layer；Deviate from the second luminescent layer of the first luminescent layer side positioned at P-type layer；Deviate from the second n type semiconductor layer of P-type layer side positioned at the second luminescent layer；Wherein, the first luminescent layer is InxGa1‑xN/GaN quantum well layer, the second luminescent layer are InyGa1‑yN/GaN quantum well layer, x are not equal to y.Dual-wavelength LEDs epitaxial structure in the application, P-type layer prevent the diffusion of the first luminescent layer and the second luminescent layer between the first luminescent layer and the second luminescent layer, to eliminate the influence of the first luminescent layer and the second luminous interlayer, emission wavelength is more evenly.The application also provides a kind of dual-wavelength LEDs epitaxial structure production method having the above advantages.
Description
Technical field
This application involves LED technology fields, more particularly to a kind of dual-wavelength LEDs epitaxial structure and preparation method thereof.
Background technique
LED (Light Emitting Diode, light emitting diode) is a kind of semiconductor element, electric energy can directly be turned
It is melted into luminous energy.Currently, white light LEDs are generally to make blue light and Huang by smearing yellow fluorescent powder on blue-light LED chip in the market
Light is mixed into white light.Since the material of fluorescent powder is very big to the influence of fading of white light LEDs, and fluorescent powder meeting aging, it influences white
The service life of light LED issues on a single die so scientific research personnel develops the Single chip white light LED of unstressed configuration powder
Blue light and green-yellow light, both light are mixed into white light, and the pure sense of high transparency not having with conventional white light LED.
But existing dual-wavelength LEDs epitaxial structure, in the growth course of active area, blue light active area has with green-yellow light
It is provided with N-type layer between source region, since the growth temperature of N-type layer is higher, influences doping component in the active area below N-type layer
Diffusion, is unfavorable for doping component quantum dot and is formed, make to interact between blue light active area and green-yellow light active area, cause to send out
Optical wavelength is uneven.
Summary of the invention
The purpose of the application is to provide a kind of dual-wavelength LEDs epitaxial structure and preparation method thereof, to solve in the prior art
Blue light and green-yellow light, when being mixed into white light, mutual shadow between blue light active area and green-yellow light active area are issued using single-chip LED
Loud problem.
In order to solve the above technical problems, the application provides the following technical solutions:
A kind of dual-wavelength LEDs epitaxial structure, comprising:
Substrate；
The first n type semiconductor layer positioned at first side of substrate；
Deviate from the first luminescent layer of the one side of substrate positioned at first n type semiconductor layer；
Deviate from the P-type layer of first n type semiconductor layer side positioned at first luminescent layer；
Deviate from the second luminescent layer of first luminescent layer side positioned at the P-type layer；
Deviate from the second n type semiconductor layer of the P-type layer side positioned at second luminescent layer；
Wherein, first luminescent layer is InxGa1-xN/GaN quantum well layer, the second luminescent layer are InyGa1-yN/GaN quantum
Well layer, x are not equal to y.
Optionally, the P-type layer includes:
Deviate from the first p-type AlGaN layer of first n type semiconductor layer side positioned at first luminescent layer；
Deviate from GaN layers of p-type of first luminescent layer side positioned at the first p-type AlGaN layer；
Deviate from the 2nd P type AlGaN layer of the first p-type AlGaN layer side positioned at the p-type GaN layer.
Optionally, first luminescent layer includes the In for stacking gradually five periodsxGa1-xN layers and GaN layer.
Optionally, the In of first luminescent layerxGa1-xX value is 0.3 in N.
Optionally, second luminescent layer includes the In for stacking gradually five periodsyGa1-yN layers and GaN layer.
Optionally, the In of second luminescent layeryGa1-yY value is 0.2 in N.
The application also provides a kind of dual-wavelength LEDs epitaxial structure production method, comprising:
Surface prepares the first n type semiconductor layer on substrate；
The first luminescent layer is formed away from the one side of substrate in first n type semiconductor layer；
P-type layer is formed away from first n type semiconductor layer side in first luminescent layer；
The second luminescent layer is formed away from first luminescent layer side in the P-type layer；
The second n type semiconductor layer is formed away from the P-type layer side in second luminescent layer；
Wherein, first luminescent layer is InxGa1-xN/GaN quantum well layer, the second luminescent layer are InyGa1-yN/GaN quantum
Well layer, x are not equal to y.
Optionally, described to include: away from first n type semiconductor layer side formation P-type layer in first luminescent layer
Temperature is 880 DEG C -900 DEG C, forms first away from first n type semiconductor layer side in first luminescent layer
P-type AlGaN layer；
Temperature is 980 DEG C -1000 DEG C, forms p-type away from first luminescent layer side in the first p-type AlGaN layer
GaN layer；
Temperature is 880 DEG C -900 DEG C, forms the 2nd P away from AlGaN layers of side of first p-type in the p-type GaN layer
Type AlGaN layer.
Optionally, described to include: away from the one side of substrate the first luminescent layer of formation in first n type semiconductor layer
Temperature is 700 DEG C, forms In away from the one side of substrate in first n type semiconductor layerxGa1-xN layers；
Temperature is 850 DEG C, in the InxGa1-xN layers of upper surface form GaN layer；
Grow the InxGa1-xN layers and the GaN layer are a growth cycle, the repeated growth period five times.
Optionally, described to include: away from first luminescent layer side the second luminescent layer of formation in the P-type layer
Temperature is 700 DEG C, forms In away from first luminescent layer side in the P-type layeryGa1-yN layers；
Temperature is 850 DEG C, in the InyGa1-yN layers form GaN layers away from the P-type layer side；
Grow the InyGa1-yN layers and the GaN layer are a growth cycle, the repeated growth period five times.
A kind of dual-wavelength LEDs epitaxial structure provided herein, including substrate；The first N positioned at first side of substrate
Type semiconductor layer；Deviate from the first luminescent layer of the one side of substrate positioned at first n type semiconductor layer；Positioned at first hair
Photosphere deviates from the P-type layer of first n type semiconductor layer side；Positioned at the P-type layer away from first luminescent layer side
Second luminescent layer；Deviate from the second n type semiconductor layer of the P-type layer side positioned at second luminescent layer；Wherein, described first
Luminescent layer is InxGa1-xN/GaN quantum well layer, the second luminescent layer are InyGa1-yN/GaN quantum well layer, x are not equal to y.The application
Provided dual-wavelength LEDs epitaxial structure, P-type layer are located at first luminescent layer away from first n type semiconductor layer one
Side, the second luminescent layer are located at the P-type layer away from first luminescent layer side, so that preventing the first luminescent layer built in P-type layer
With the diffusion of the second luminescent layer, to eliminate the influence between the first luminescent layer and the second luminescent layer, emission wavelength is more uniform.
Further, it in post-production LED chip, is not required to etch, increases light-emitting area, to improve luminous efficiency.In addition, this Shen
A kind of dual-wavelength LEDs epitaxial structure production method having the above advantages please also is provided.
Detailed description of the invention
It, below will be to embodiment or existing for the clearer technical solution for illustrating the embodiment of the present application or the prior art
Attached drawing needed in technical description is briefly described, it should be apparent that, the accompanying drawings in the following description is only this Shen
Some embodiments please for those of ordinary skill in the art without creative efforts, can be with root
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is a kind of structural schematic diagram of dual-wavelength LEDs epitaxial structure provided herein；
Fig. 2 is another structural schematic diagram of dual-wavelength LEDs epitaxial structure provided herein；
Fig. 3 is a kind of flow chart of dual-wavelength LEDs epitaxial structure production method provided herein.
Specific embodiment
In order to make those skilled in the art more fully understand application scheme, with reference to the accompanying drawings and detailed description
The application is described in further detail.Obviously, described embodiments are only a part of embodiments of the present application, rather than
Whole embodiments.Based on the embodiment in the application, those of ordinary skill in the art are not making creative work premise
Under every other embodiment obtained, shall fall in the protection scope of this application.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, but the present invention can be with
Implemented using other than the one described here other way, those skilled in the art can be without prejudice to intension of the present invention
In the case of do similar popularization, therefore the present invention is not limited by the specific embodiments disclosed below.
Just as described in the background section, blue light and green-yellow light are issued on a chip, when both light are mixed into white light,
Due to being provided with N-type layer between blue light active area and green-yellow light active area, between blue light active area and green-yellow light active area mutually
It influences, causes emission wavelength uneven.
In view of this, this application provides a kind of dual-wavelength LEDs epitaxial structures, referring to FIG. 1, Fig. 1 is mentioned by the application
For a kind of structural schematic diagram of dual-wavelength LEDs epitaxial structure, comprising:
Substrate 1；
It should be pointed out that the material of the substrate 1 and be not specifically limited in the present embodiment, it can be according to practical feelings
Condition voluntarily selects.For example, substrate 1 can be Sapphire Substrate, can also for silicon carbide substrates, gallium nitride substrate, silicon substrate or
Person's zinc oxide substrate etc..
The first n type semiconductor layer 2 positioned at 1 first side of substrate；
Specifically, first n type semiconductor layer 2 can be N-type GaN layer etc..
Deviate from the first luminescent layer 3 of 1 side of substrate positioned at first n type semiconductor layer 2；
It should be pointed out that the specific luminescent species of first luminescent layer 3 and be not especially limited in the present embodiment,
It can depend on the circumstances.
Deviate from the P-type layer 4 of 2 side of the first n type semiconductor layer positioned at first luminescent layer 3；
It should be noted that the specific structure of the P-type layer 4 and be not specifically limited in the present embodiment, it can be voluntarily
Setting.Specifically, the P-type layer 4 can be the P type GaN layer being superimposed on two layers.
Deviate from the second luminescent layer 5 of 3 side of the first luminescent layer positioned at the P-type layer 4；
It should be pointed out that the specific luminescent species of second luminescent layer 5 and be not especially limited in the present embodiment,
It can depend on the circumstances.
Deviate from the second n type semiconductor layer 6 of 4 side of P-type layer positioned at second luminescent layer 5；
Specifically, second n type semiconductor layer 6 can be N-type GaN layer etc..
Wherein, first luminescent layer 3 is InxGa1-xN/GaN quantum well layer, the second luminescent layer 5 are InyGa1-yN/GaN amount
Sub- well layer, x are not equal to y.
It should be pointed out that the value of x and being not specifically limited in the present embodiment, can depend on the circumstances.
It may also be noted that the value of y and being not specifically limited in the present embodiment, can depend on the circumstances.
Dual-wavelength LEDs epitaxial structure provided herein, including substrate 1；The first N positioned at 1 first side of substrate
Type semiconductor layer 2；Deviate from the first luminescent layer 3 of 1 side of substrate positioned at first n type semiconductor layer 2；Positioned at described
One luminescent layer 3 deviates from the P-type layer 4 of 2 side of the first n type semiconductor layer；It shines positioned at the P-type layer 4 away from described first
Second luminescent layer 5 of 3 side of layer；Deviate from the second n type semiconductor layer of 4 side of P type layer positioned at second luminescent layer 5
6；Wherein, first luminescent layer 3 is InxGa1-xN/GaN quantum well layer, the second luminescent layer 5 are InyGa1-yN/GaN Quantum Well
Layer, x are not equal to y.Dual-wavelength LEDs epitaxial structure provided herein, P-type layer 4 are located at first luminescent layer 3 away from institute
2 side of the first n type semiconductor layer is stated, the second luminescent layer 5 is located at the P-type layer 4 away from 3 side of the first luminescent layer, so that P
Built in type layer 4, prevent the first luminescent layer 3 and the second luminescent layer 5 from spreading, thus eliminate the first luminescent layer 3 and the second luminescent layer 5 it
Between influence, emission wavelength is more uniform, further, in post-production LED chip, be not required to etch, increase light-emitting surface
Product, to improve luminous efficiency.
Have it should be noted that the present embodiment does not do the thickness of the first n type semiconductor layer 2 and the second n type semiconductor layer 6
Body limits.
Specifically, the thickness of the first n type semiconductor layer 2 can be 2.5 μm, the 2nd N in one embodiment of the application
The thickness of type semiconductor layer 6 is also 2.5 μm.
Referring to FIG. 2, Fig. 2 is another structural schematic diagram of dual-wavelength LEDs epitaxial structure provided herein.
Based on any of the above embodiments, in one embodiment of the application, in the substrate 1 and described first
It can also include the nucleating layer 7 positioned at 1 first side of substrate between n type semiconductor layer 2, and deviate from positioned at nucleating layer 7
The buffer layer 8 of 1 side of substrate.
It should be pointed out that being not specifically limited in the present embodiment to the thickness of the nucleating layer 7, similarly, to described slow
The thickness for rushing layer 8 is also not specifically limited.
Specifically, in one embodiment of the application, the nucleating layer 7 with a thickness of 5nm, the thickness of the buffer layer 8
Degree is 1.2 μm.
Based on any of the above embodiments, in one embodiment of the application, the P type layer 4 includes being located at institute
State the first p-type AlGaN layer that the first luminescent layer 3 deviates from 2 side of the first n type semiconductor layer；Positioned at first p-type
AlGaN layer deviates from the p-type GaN layer of 3 side of the first luminescent layer；Deviate from the first p-type AlGaN positioned at the p-type GaN layer
Second p-type AlGaN layer of layer side, is arranged p-type GaN layer between the first p-type AlGaN layer and the second p-type AlGaN layer,
The generation of lattice mismatch can be effectively prevented.
It should be noted that the thickness of both the first p-type AlGaN layer and the 2nd P type AlGaN layer in the present embodiment
Degree and thickness relationship between the two are simultaneously not specifically limited, and can be depended on the circumstances.
It should also be noted that, being also not specifically limited in the present embodiment to the p-type GaN layer thickness, depend on the circumstances.
Optionally, in one embodiment of the application, both the first p-type AlGaN layer and the second p-type AlGaN layer
Thickness is equal, can be specially 0.5 μm, and the p-type GaN thickness degree can also be specially 0.5 μm.
Based on any of the above embodiments, in one embodiment of the application, first luminescent layer 3 include according to
The In in 5 periods of secondary stackingxGa1-xN layers and GaN layer.
It should be pointed out that the value of x is not especially limited in the present embodiment, it can be with sets itself.
Specifically, in one embodiment of the application, the In of first luminescent layer 3xGa1-xX value is 0.3 in N.
It should be pointed out that In in the present embodimentxGa1-xN thickness degree is not especially limited, can be with sets itself.
Specifically, in one embodiment of the application, InxGa1-xN thickness degree can be 5nm.
It should be pointed out that the GaN layer thickness in the first luminescent layer 3 is not especially limited in the present embodiment, it can be certainly
Row setting.
Specifically, the GaN layer thickness in the first luminescent layer 3 can be 8nm in one embodiment of the application.
Based on any of the above embodiments, in one embodiment of the application, second luminescent layer 5 include according to
The In in 5 periods of secondary stackingyGa1-yN layers and GaN layer.
It should be pointed out that the value of y is not especially limited in the present embodiment, it can be with sets itself.
Specifically, in one embodiment of the application, the In of second luminescent layer 5yGa1-yY value is 0.2 in N.
It should be pointed out that In in the present embodimentyGa1-yN thickness degree is not especially limited, can be with sets itself.
Specifically, in one embodiment of the application, InyGa1-yN thickness degree can be 5nm.
It should be pointed out that the GaN layer thickness in the second luminescent layer 5 is not especially limited in the present embodiment, it can be certainly
Row setting.
Specifically, the GaN layer thickness in the second luminescent layer 5 can be 8nm in one embodiment of the application.
Optionally, on the basis of the above embodiments, in one embodiment of the application, when going for white light,
First luminescent layer 3 can be the sub- trap active layer of blue light amount, and second luminescent layer 5 can be active for green-yellow light Quantum Well
Layer, but the application to this and is not specifically limited.In another embodiment of the application, first luminescent layer 3 can be with
For green-yellow light mqw active layer, second luminescent layer 5 can be the sub- trap active layer of blue light amount.
The application also provides a kind of dual-wavelength LEDs epitaxial structure production method, referring to FIG. 3, Fig. 3 is provided herein
Dual-wavelength LEDs epitaxial structure production method a kind of flow chart, this method comprises:
Step S101: surface prepares the first n type semiconductor layer on substrate.
Specifically, controlling temperature at 1030 DEG C -1050 DEG C, it is specifically as follows 1030 DEG C, 1035 DEG C, 1040 DEG C, 1045
DEG C, 1050 DEG C, naturally it is also possible to other temperature in range thus, on substrate surface make N-type GaN layer.Wherein substrate can
To select Sapphire Substrate, it is also an option that silicon carbide substrates or gallium nitride substrate or silicon substrate etc., the present embodiment pair
This is without limitation.
Step S102: the first luminescent layer is formed away from the one side of substrate in first n type semiconductor layer.
In the present embodiment, when first n type semiconductor layer forms the first luminescent layer away from the one side of substrate, to shape
It is not specifically limited at the luminescent species of luminescent layer.
Step S103: P-type layer is formed away from first n type semiconductor layer side in first luminescent layer.
In the present embodiment, when forming P-type layer, the p-type GaN layer being superimposed on two layers can be formed.
Step S104: the second luminescent layer is formed away from first luminescent layer side in the P-type layer.
In the present embodiment, when the P-type layer forms the second luminescent layer away from first luminescent layer side, send out being formed
The luminescent species of photosphere are not specifically limited.
Step S105: the 2nd N type semiconductor layer is formed away from the P-type layer side in second luminescent layer.
Specifically, temperature can be controlled at 1030 DEG C -1050 DEG C, deviate from the P-type layer one in second luminescent layer
Side forms N-type GaN layer.
Wherein, first luminescent layer is InxGa1-xN/GaN quantum well layer, the second luminescent layer are InyGa1-yN/GaN quantum
Well layer, x are not equal to y, so that the first luminescent layer and the second luminescent layer issue two different light.
The dual-wavelength LEDs epitaxial structure of dual-wavelength LEDs epitaxial structure production method production provided herein, including
Substrate；The first n type semiconductor layer positioned at first side of substrate；Deviate from the substrate positioned at first n type semiconductor layer
First luminescent layer of side；Deviate from the P-type layer of first n type semiconductor layer side positioned at first luminescent layer；Positioned at institute
State the second luminescent layer that P type layer deviates from first luminescent layer side；Deviate from the P-type layer one positioned at second luminescent layer
Second n type semiconductor layer of side；Wherein, first luminescent layer is InxGa1-xN/GaN quantum well layer, the second luminescent layer are
InyGa1-yN/GaN quantum well layer, x are not equal to y.P-type layer is located at first luminescent layer away from first n type semiconductor layer
Side, the second luminescent layer are located at the P-type layer away from first luminescent layer side, so that preventing first to shine built in P-type layer
The diffusion of layer and the second luminescent layer, to eliminate the influence between the first luminescent layer and the second luminescent layer, emission wavelength is more equal
It is even.Further, it in post-production LED chip, is not required to etch, increases light-emitting area, to improve luminous efficiency.
On the basis of the above embodiments, in one embodiment of the application, surface prepares the first N-type half on substrate
Before conductor layer further include: control temperature at 630-650 DEG C, form the nucleating layer with a thickness of 5nm in the upper surface of substrate；It will
Temperature is controlled at 980-1000 DEG C, deviates from one side of substrate formation in nucleating layer with a thickness of 1.2 μm of buffer layer.
Based on any of the above embodiments, described in first luminescent layer in one embodiment of the application
Forming P-type layer away from first n type semiconductor layer side includes:
Temperature is controlled at 880-900 DEG C, is formed in first luminescent layer away from first n type semiconductor layer side
First p-type AlGaN layer, the first p-type AlGaN layer is with a thickness of 0.5 μm；Temperature is controlled at 980-1000 DEG C, in first p-type
AlGaN layer forms p-type GaN layer away from first luminescent layer side, and p-type GaN layer is with a thickness of 0.5 μm；Temperature control is existed
880-900 DEG C, the second p-type AlGaN layer, the second p-type are formed away from the first p-type AlGaN layer side in the p-type GaN layer
AlGaN layer is with a thickness of 0.5 μm.P-type GaN layer is being formed between the first p-type AlGaN layer and the second p-type AlGaN layer, it can
To effectively prevent the generation of lattice mismatch.
Based on any of the above embodiments, in one embodiment of the application, in first n type semiconductor layer
Forming the first luminescent layer away from the one side of substrate includes:
Temperature is controlled at 700 DEG C, forms In away from the one side of substrate in first n type semiconductor layerxGa1-xN
Layer；
Temperature is controlled at 850 DEG C, in the InxGa1-xN layers of upper surface form GaN layer；
Grow the InxGa1-xN layers and the GaN layer are a growth cycle, the repeated growth period five times, described
First n type semiconductor layer forms the In for stacking gradually five periods away from the one side of substratexGa1-xN layers and GaN layer.
It should be noted that forming In in the present embodimentxGa1-xAt N layers, the doping component of In is not specifically limited,
It can be with sets itself.
Specifically, in one embodiment of the application, the In of first luminescent layerxGa1-xIt, can be by In's in N
Component x value is 0.3.
Specifically, when forming the first luminescent layer, 5nm thickness can be formed in one embodiment of the application
InxGa1-xN layers.
Specifically, when forming the first luminescent layer, the GaN of 8nm thickness can be formed in one embodiment of the application
Layer.
Based on any of the above embodiments, described to deviate from institute in the P-type layer in one embodiment of the application
Stating the first luminescent layer side the second luminescent layer of formation includes:
Temperature is controlled at 700 DEG C, forms In away from first luminescent layer side in the P-type layeryGa1-yN layers；
Temperature is controlled at 850 DEG C, in the InyGa1-yN layers form GaN layer away from the P-type layer side；
Grow the InyGa1-yN layers and the GaN layer are a growth cycle, the repeated growth period five times, described
P-type layer forms the In for stacking gradually five periods away from first luminescent layer sideyGa1-yN layers and GaN layer.
It should be noted that forming In in the present embodimentyGa1-yAt N layers, the doping component of In is not specifically limited,
It can be with sets itself.
Specifically, in one embodiment of the application, the In of second luminescent layeryGa1-yIt, can be by In's in N
Component y value is 0.2.
Specifically, when forming the second luminescent layer, 5nm thickness can be formed in one embodiment of the application
InyGa1-yN layers.
Specifically, when forming the second luminescent layer, the GaN of 8nm thickness can be formed in one embodiment of the application
Layer.
It based on any of the above embodiments,, can be with when going for white light in one embodiment of the application
First luminescent layer is formed as into blue light mqw active layer, it is active that second luminescent layer is formed as yellowish green photons trap
Layer, but the application to this and is not specifically limited.It, can be by first luminescent layer in another embodiment of the application
Be formed as green-yellow light mqw active layer, second luminescent layer is formed as into blue light mqw active layer.
Dual-wavelength LEDs epitaxial structure production method provided herein is specifically explained with a concrete condition below
It states.
Temperature is controlled at 650 DEG C, surface is grown GaN nucleating layer 3 minutes on a sapphire substrate, and thickness is about 5nm；So
Temperature is raised to 1000 DEG C afterwards, is grown GaN buffer layer 30 minutes in GaN nucleating layer upper surface, thickness is about 1.2 μm；Then will
Temperature is raised to 1050 DEG C, and the N-type GaN layer of growth 60 minutes, thickness is about 2.5 μm；Then blue light active area is grown comprising have
The growth of the Quantum Well in 5 periods first cools to 700 DEG C of growths, 3 minutes In0.3Ga0.7N well layer, thickness are about 5nm, are then risen
Temperature to 850 DEG C of growths, 7 minutes GaN barrier layer, thickness be about 8nm this be a period；Then 900 DEG C are warming up to, growth 15 minutes
The barrier layer p-type AlGaN, thickness are about 0.5 μm；Then 1000 DEG C are warming up to, the p-type GaN layer of growth 20 minutes, thickness is about
It is 0.5 μm；900 DEG C are cooled to again, and the barrier layer p-type AlGaN of growth 15 minutes, thickness is about 0.5 μm；Then it grows yellowish green
Light active area comprising have the growth of the Quantum Well in 5 periods, first cool to 700 DEG C of growths, 3 minutes In0.2Ga0.8N well layer,
Thickness is about 5nm, is then warming up to 850 DEG C of growths, 7 minutes GaN barrier layer, thickness be about 8nm this be a period；Finally, by warm
Degree is raised to the N-type GaN layer of 1050 DEG C of growths 60 minutes, and thickness is about 2.5 μm.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with it is other
The difference of embodiment, same or similar part may refer to each other between each embodiment.For being filled disclosed in embodiment
For setting, since it is corresponded to the methods disclosed in the examples, so being described relatively simple, related place is referring to method part
Explanation.
A kind of dual-wavelength LEDs epitaxial structure and preparation method thereof provided herein is described in detail above.
Specific examples are used herein to illustrate the principle and implementation manner of the present application, and the explanation of above embodiments is only used
The present processes and its core concept are understood in help.It should be pointed out that for those skilled in the art,
Under the premise of not departing from the application principle, can also to the application, some improvement and modification can also be carried out, these improvement and modification
It falls into the protection scope of the claim of this application.
Claims (10)
1. a kind of dual-wavelength LEDs epitaxial structure characterized by comprising
Substrate；
The first n type semiconductor layer positioned at first side of substrate；
Deviate from the first luminescent layer of the one side of substrate positioned at first n type semiconductor layer；
Deviate from the P-type layer of first n type semiconductor layer side positioned at first luminescent layer；
Deviate from the second luminescent layer of first luminescent layer side positioned at the P-type layer；
Deviate from the second n type semiconductor layer of the P-type layer side positioned at second luminescent layer；
Wherein, first luminescent layer is InxGa1-xN/GaN quantum well layer, second luminescent layer are InyGa1-yN/GaN quantum
Well layer, x are not equal to y.
2. dual-wavelength LEDs epitaxial structure as described in claim 1, which is characterized in that the P-type layer includes:
Deviate from the first p-type AlGaN layer of first n type semiconductor layer side positioned at first luminescent layer；
Deviate from the p-type GaN layer of first luminescent layer side positioned at the first p-type AlGaN layer；
Deviate from the second p-type AlGaN layer of the first p-type AlGaN layer side positioned at the p-type GaN layer.
3. dual-wavelength LEDs epitaxial structure as claimed in claim 1 or 2, which is characterized in that first luminescent layer includes successively
The In in five periods is laminatedxGa1-xN layers and GaN layer.
4. dual-wavelength LEDs epitaxial structure as claimed in claim 2, which is characterized in that the In of first luminescent layerxGa1-xIn N
X value is 0.3.
5. dual-wavelength LEDs epitaxial structure as claimed in claim 1 or 2, which is characterized in that second luminescent layer includes successively
The In in five periods is laminatedyGa1-yN layers and GaN layer.
6. dual-wavelength LEDs epitaxial structure as claimed in claim 2, which is characterized in that the In of second luminescent layeryGa1-yIn N
Y value is 0.2.
7. a kind of dual-wavelength LEDs epitaxial structure production method characterized by comprising
Surface prepares the first n type semiconductor layer on substrate；
The first luminescent layer is formed away from the one side of substrate in first n type semiconductor layer；
P-type layer is formed away from first n type semiconductor layer side in first luminescent layer；
The second luminescent layer is formed away from first luminescent layer side in the P-type layer；
The second n type semiconductor layer is formed away from the P-type layer side in second luminescent layer；
Wherein, first luminescent layer is InxGa1-xN/GaN quantum well layer, the second luminescent layer are InyGa1-yN/GaN Quantum Well
Layer, x are not equal to y.
8. dual-wavelength LEDs epitaxial structure production method as claimed in claim 7, which is characterized in that described in first hair
Photosphere forms P-type layer away from first n type semiconductor layer side
Temperature is 880 DEG C -900 DEG C, forms the first p-type away from first n type semiconductor layer side in first luminescent layer
AlGaN layer；
Temperature is 980 DEG C -1000 DEG C, forms p-type GaN away from first luminescent layer side in the first p-type AlGaN layer
Layer；
Temperature is 880 DEG C -900 DEG C, forms the second p-type away from the first p-type AlGaN layer side in the p-type GaN layer
AlGaN layer.
9. dual-wavelength LEDs epitaxial structure production method as claimed in claim 7, which is characterized in that described in first N-type
Semiconductor layer forms the first luminescent layer away from the one side of substrate
Temperature is 700 DEG C, forms In away from the one side of substrate in first n type semiconductor layerxGa1-xN layers；
Temperature is 850 DEG C, in the InxGa1-xN layers of upper surface form GaN layer；
Grow the InxGa1-xN layers and the GaN layer are a growth cycle, the repeated growth period five times.
10. dual-wavelength LEDs epitaxial structure production method as claimed in claim 7, which is characterized in that described in the P-type layer
Forming the second luminescent layer away from first luminescent layer side includes:
Temperature is 700 DEG C, forms In away from first luminescent layer side in the P-type layeryGa1-yN layers；
Temperature is 850 DEG C, in the InyGa1-yN layers form GaN layer away from the P-type layer side；
Grow the InyGa1-yN layers and the GaN layer are a growth cycle, the repeated growth period five times.
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Application publication date: 20190409 |