CN111149223A - Composite dual-wavelength LED chip and manufacturing method thereof - Google Patents
Composite dual-wavelength LED chip and manufacturing method thereof Download PDFInfo
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- CN111149223A CN111149223A CN201980003482.7A CN201980003482A CN111149223A CN 111149223 A CN111149223 A CN 111149223A CN 201980003482 A CN201980003482 A CN 201980003482A CN 111149223 A CN111149223 A CN 111149223A
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Abstract
The invention provides a composite dual-wavelength LED chip and a manufacturing method thereof, wherein the composite dual-wavelength LED chip comprises the following steps: the light-emitting diode comprises a substrate, a first buffer layer, a first semiconductor layer, a first light-emitting layer, a second semiconductor layer, a second buffer layer, a third semiconductor layer, a second light-emitting layer and a fourth semiconductor layer which are arranged in sequence; the first semiconductor layer and the fourth semiconductor layer are both first type semiconductor layers, and the second semiconductor layer and the third semiconductor layer are both second type semiconductor layers. According to the invention, two light-emitting layers and four semiconductor layers are arranged, and a common electrode is not needed, so that the light-emitting layers can be independently controlled, and mixed light emission can be realized; there is no difference in driving voltage, and thus, emission brightness unevenness of two wavelengths is not caused.
Description
Technical Field
The invention relates to the technical field of a miniaturized light-emitting diode self-luminous display device, in particular to a composite type dual-wavelength LED chip and a manufacturing method thereof.
Background
A conventional Light Emitting Diode (LED) includes a plurality of n-type contact layers, two active layers, and a plurality of p-type contact layers, the n-type contact layers, the active layers, and the p-type contact layers are stacked one on another, the two active layers are quantum wells with different optical bands, and the two active layers share one p-type contact layer or one n-type contact layer. The LED device can control the luminous intensity of the quantum wells with two different optical wave bands by controlling the current and the voltage applied by each electrode, and has the characteristics of simple circuit, long service life and high photoelectric conversion efficiency. However, when the LED device encounters a dual-wavelength emission common electrode, there may be a driving voltage difference, resulting in non-uniformity of emission brightness for both wavelengths.
Therefore, the prior art has defects and needs to be improved and developed.
Disclosure of Invention
The present invention provides a composite dual-wavelength LED chip and a manufacturing method thereof, aiming at solving the problem that when an LED device in the prior art encounters a dual-wavelength emission common electrode, a driving voltage difference may exist, so that emission brightness of two wavelengths is not uniform.
The technical scheme adopted by the invention for solving the technical problem is as follows:
a composite dual wavelength LED chip, comprising: the light-emitting diode comprises a substrate, a first buffer layer positioned on the first side of the substrate, a first semiconductor layer positioned on one side, away from the substrate, of the first buffer layer, a first light-emitting layer positioned on one side, away from the first buffer layer, of the first semiconductor layer, a second semiconductor layer positioned on one side, away from the first semiconductor layer, of the first light-emitting layer, a second buffer layer positioned on one side, away from the first light-emitting layer, of the second semiconductor layer, a third semiconductor layer positioned on one side, away from the second semiconductor layer, of the second buffer layer, a second light-emitting layer positioned on one side, away from the second buffer layer, of the third semiconductor layer, and a fourth semiconductor layer positioned on one; the first semiconductor layer and the fourth semiconductor layer are both first type semiconductor layers, and the second semiconductor layer and the third semiconductor layer are both second type semiconductor layers.
Further, the substrate is a sapphire substrate.
Further, the first buffer layer is a first undoped gallium nitride layer; the second buffer layer is a second undoped gallium nitride layer.
Further, the first light emitting layer is a blue light quantum well layer; the second light emitting layer is a green light quantum well layer.
Further, the first semiconductor layer is a first P-doped gallium nitride layer, and the fourth semiconductor layer is a second P-doped gallium nitride layer; the second semiconductor layer is a first N-doped gallium nitride layer, and the third semiconductor layer is a second N-doped gallium nitride layer.
Further, the first semiconductor layer is a first N-doped gallium nitride layer, and the fourth semiconductor layer is a second N-doped gallium nitride layer; the second semiconductor layer is a first P-doped gallium nitride layer, and the third semiconductor layer is a second P-doped gallium nitride layer.
Furthermore, one side of the first P-doped gallium nitride layer, which is far away from the substrate, is provided with a first P-type electrode, one side of the first N-doped gallium nitride layer, which is far away from the substrate, is provided with a first N-type electrode, one side of the second P-doped gallium nitride layer, which is far away from the substrate, is provided with a second P-type electrode, and one side of the second N-doped gallium nitride layer, which is far away from the substrate, is provided with a second N-type electrode.
The invention also provides a manufacturing method of the composite dual-wavelength LED chip, which comprises the following steps:
growing a first buffer layer on the upper surface of the substrate;
growing a first semiconductor layer on one side of the first buffer layer, which is far away from the substrate;
growing a first light-emitting layer on one side of the first semiconductor layer, which is far away from the first buffer layer;
growing a second semiconductor layer on the side, away from the first semiconductor layer, of the first light-emitting layer;
growing a second buffer layer on one side of the second semiconductor layer, which is far away from the first light-emitting layer;
growing a third semiconductor layer on one side of the second buffer layer, which is far away from the second semiconductor layer;
growing a second light-emitting layer on one side of the third semiconductor layer, which is far away from the second buffer layer;
growing a fourth semiconductor layer on the side, away from the third semiconductor layer, of the second light-emitting layer;
the first semiconductor layer and the fourth semiconductor layer are both first type semiconductor layers, and the second semiconductor layer and the third semiconductor layer are both second type semiconductor layers.
Further, the manufacturing method of the composite dual-wavelength LED chip specifically includes:
growing a first undoped gallium nitride layer on the upper surface of the sapphire substrate;
growing a first P-doped gallium nitride layer on one side of the first undoped gallium nitride layer, which is far away from the sapphire substrate;
growing a blue light quantum well layer on one side of the first P-doped gallium nitride layer, which is far away from the first undoped gallium nitride layer;
growing a first N-doped gallium nitride layer on one side of the blue light quantum well layer, which is far away from the first P-doped gallium nitride layer;
growing a second undoped gallium nitride layer on one side of the first N-doped gallium nitride layer, which is far away from the green light quantum well layer;
growing a second N-doped gallium nitride layer on one side of the second undoped gallium nitride layer, which is far away from the first N-doped gallium nitride layer;
growing a green light quantum well layer on one side of the second N-doped gallium nitride layer, which is far away from the second undoped gallium nitride layer;
growing a second P-doped gallium nitride layer on the green light quantum well layer at the side away from the second N-doped gallium nitride layer;
and forming a first P-type electrode on the first P-doped gallium nitride layer, forming a first N-type electrode on the first N-doped gallium nitride layer, forming a second P-type electrode on the second P-doped gallium nitride layer, and forming a second N-type electrode on the second N-doped gallium nitride layer.
Further, the manufacturing method of the composite dual-wavelength LED chip specifically includes:
growing a first undoped gallium nitride layer on the upper surface of the sapphire substrate;
growing a first N-doped gallium nitride layer on one side of the first undoped gallium nitride layer, which is far away from the sapphire substrate;
growing a blue light quantum well layer on one side of the first N-doped gallium nitride layer, which is far away from the first undoped gallium nitride layer;
growing a first P-doped gallium nitride layer on one side of the blue light quantum well layer, which is far away from the first N-doped gallium nitride layer;
growing a second undoped gallium nitride layer on one side of the first P-doped gallium nitride layer, which is far away from the green light quantum well layer;
growing a second P-doped gallium nitride layer on one side of the second undoped gallium nitride layer, which is far away from the first P-doped gallium nitride layer;
growing a green light quantum well layer on the side, away from the second undoped gallium nitride layer, of the second P-doped gallium nitride layer;
growing a second N-doped gallium nitride layer on the green light quantum well layer at the side away from the second P-doped gallium nitride layer;
and forming a first P-type electrode on the first P-doped gallium nitride layer, forming a first N-type electrode on the first N-doped gallium nitride layer, forming a second P-type electrode on the second P-doped gallium nitride layer, and forming a second N-type electrode on the second N-doped gallium nitride layer.
The invention provides a composite dual-wavelength LED chip and a manufacturing method thereof, wherein the composite dual-wavelength LED chip comprises the following steps: the light-emitting diode comprises a substrate, a first buffer layer positioned on the first side of the substrate, a first semiconductor layer positioned on one side, away from the substrate, of the first buffer layer, a first light-emitting layer positioned on one side, away from the first buffer layer, of the first semiconductor layer, a second semiconductor layer positioned on one side, away from the first semiconductor layer, of the first light-emitting layer, a second buffer layer positioned on one side, away from the first light-emitting layer, of the second semiconductor layer, a third semiconductor layer positioned on one side, away from the second semiconductor layer, of the second buffer layer, a second light-emitting layer positioned on one side, away from the second buffer layer, of the third semiconductor layer, and a fourth semiconductor layer positioned on one; the first semiconductor layer and the fourth semiconductor layer are both first type semiconductor layers, and the second semiconductor layer and the third semiconductor layer are both second type semiconductor layers. According to the invention, two light-emitting layers and four semiconductor layers are arranged, and a common electrode is not needed, so that the light-emitting layers can be independently controlled, and mixed light emission can be realized; there is no difference in driving voltage, and thus, emission brightness unevenness of two wavelengths is not caused.
Drawings
Fig. 1 is a schematic structural diagram of a composite dual-wavelength LED chip according to a preferred embodiment of the present invention.
Fig. 2 is a schematic structural diagram of another preferred embodiment of the composite dual-wavelength LED chip of the present invention.
Fig. 3 is a schematic structural view of a first embodiment of an electrode used in the composite type dual wavelength LED chip of the present invention.
Fig. 4 is a schematic structural view of a second embodiment of an electrode used in the composite type dual wavelength LED chip of the present invention.
Fig. 5 is a schematic structural view of a third embodiment of an electrode used in the composite type dual wavelength LED chip of the present invention.
FIG. 6 is a flow chart of a preferred embodiment of a method for fabricating a composite dual wavelength LED chip according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer and clearer, the present invention is further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The Mini/Micro LED display has the advantages of good stability, long service life and operation temperature, inherits the advantages of low power consumption, color saturation, high reaction speed, high contrast and the like of the LED, and has great application prospect.
The excitation of the three primary colors of the u-LED into white light is different from that of the traditional blue light + YAG fluorescent powder, and if the pixel needs to be improved, the smaller the chip size is, the more favorable the pixel improvement and the space utilization are. Therefore, the invention utilizes an epitaxial structure to grow double MQWs to emit blue light and green light, and adopts PNP design on chip design, so that the blue light and the green light can be independently controlled or mixed to emit light.
Referring to fig. 1, the present invention provides a composite dual wavelength LED chip, which includes: the light-emitting diode comprises a substrate 10, a first buffer layer 20 located on a first side of the substrate 10, a first semiconductor layer 30 located on a side of the first buffer layer 20 away from the substrate 10, a first light-emitting layer 40 located on a side of the first semiconductor layer 30 away from the first buffer layer 20, a second semiconductor layer 50 located on a side of the first light-emitting layer 40 away from the first semiconductor layer 30, a second buffer layer 60 located on a side of the second semiconductor layer 50 away from the first light-emitting layer 40, a third semiconductor layer 70 located on a side of the second buffer layer 60 away from the second semiconductor layer 50, a second light-emitting layer 80 located on a side of the third semiconductor layer 70 away from the second buffer layer 60, and a fourth semiconductor layer 90 located on a side of the second light-emitting layer 80 away from the third semiconductor. Namely, the composite type dual wavelength LED chip includes: the substrate 10, the first buffer layer 20, the second buffer layer 60, the first semiconductor layer 30, the second semiconductor layer 50, the third semiconductor layer 70, the fourth semiconductor layer 90, the first light-emitting layer 40, and the second light-emitting layer 80 are 9 layers in total, and the substrate 10, the first buffer layer 20, the first semiconductor layer 30, the first light-emitting layer 40, the second semiconductor layer 50, the second buffer layer 60, the third semiconductor layer 70, the second light-emitting layer 80, and the fourth semiconductor layer 90 are sequentially provided in this order. The first semiconductor layer 30 and the fourth semiconductor layer 90 are both first type semiconductor layers, and the second semiconductor layer 50 and the third semiconductor layer 70 are both second type semiconductor layers.
That is, the first buffer layer 20 is located on the substrate 10, the first semiconductor layer 30 is located on the first buffer layer 20, the first light emitting layer 40 is located on the first semiconductor layer 30, the second semiconductor layer 50 is located on the first light emitting layer 40, the second buffer layer 60 is located on the second semiconductor layer 50, the third semiconductor layer 70 is located on the second buffer layer 60, the second light emitting layer 80 is located on the third semiconductor layer 70, and the fourth semiconductor layer 90 is located on the second light emitting layer 80. The first semiconductor layer 30 and the fourth semiconductor layer 90 belong to the same type of semiconductor layer, and the second semiconductor layer 50 and the third semiconductor layer 70 belong to the same type of semiconductor layer.
According to the invention, two light-emitting layers and four semiconductor layers are arranged, and a common electrode is not needed, so that the light-emitting layers can be independently controlled, and mixed light emission can be realized; there is no difference in driving voltage, and thus, emission brightness unevenness of two wavelengths is not caused.
In a preferred embodiment of the present invention, the substrate is a sapphire substrate (sapphire). The GaN-based material and the epitaxial layer of the device are mainly grown on the sapphire substrate; firstly, the production technology of the sapphire substrate is mature, and the quality of devices is better; secondly, the sapphire has good stability and can be applied to the high-temperature growth process; finally, sapphire is mechanically strong and easy to handle and clean.
Further, the first buffer layer is a first undoped gallium nitride layer; the second buffer layer is a second undoped gallium nitride layer.
Further, the first light emitting layer is a blue quantum well layer (MQW for blue layer); the second light emitting layer is a green quantum well layer (MQW for green layer). The blue light quantum well layer is a multi-quantum well of a blue light wave band, and the green light quantum well layer is a multi-quantum well of a green light wave band.
In a first specific embodiment of the present invention, the first type semiconductor layer is a P-doped gallium nitride layer; the second type semiconductor layer is an N-doped gallium nitride layer. Further, the first semiconductor layer is a first P-doped gallium nitride layer, and the fourth semiconductor layer is a second P-doped gallium nitride layer; the second semiconductor layer is a first N-doped gallium nitride layer, and the third semiconductor layer is a second N-doped gallium nitride layer. Specifically, in this embodiment, referring to fig. 2, the composite dual-wavelength LED chips are sequentially arranged in the following order: the sapphire substrate 11, the first undoped gallium nitride layer 21, the first P-doped gallium nitride layer 31, the blue light quantum well layer 41, the first N-doped gallium nitride layer 51, the second undoped gallium nitride layer 61, the second N-doped gallium nitride layer 71, the green light quantum well layer 81 and the second P-doped gallium nitride layer 91. Wherein, the P-doped gallium nitride layer is a P-type doped GaN film; the N-doped gallium nitride layer is the N-type doped GaN film.
Further, with reference to fig. 2, a first P-type electrode 101 is disposed on a side of the first P-doped gallium nitride layer 31 away from the substrate, a first N-type electrode 102 is disposed on a side of the first N-doped gallium nitride layer 51 away from the substrate, a second P-type electrode 104 is disposed on a side of the second P-doped gallium nitride layer 91 away from the substrate, and a second N-type electrode 103 is disposed on a side of the second N-doped gallium nitride layer 71 away from the substrate. Specifically, the chip process flow of the invention comprises the following steps: a series of processes such as gluing, exposure, development, etching and the like are carried out, and a first P-type electrode 101 (first P-PAD) is made on the first P-doped gallium nitride layer 31, namely a green P-type electrode; a first N-type electrode 102 (first N-PAD) is formed on the first N-doped gallium nitride layer 51, i.e., a green N-type electrode; a second N-type electrode 103 (a second N-PAD), which is an N-type electrode for blue light, is disposed on the second N-doped gallium nitride layer 71; a second P-type electrode 104 (second P-PAD), that is, a blue P-type electrode, is formed on the second P-doped gallium nitride layer 91, so as to form a final chip.
In a second specific embodiment of the present invention, the first type semiconductor layer is an N-doped gallium nitride layer; the second type semiconductor layer is a P-doped gallium nitride layer. Further, the first semiconductor layer is a first N-doped gallium nitride layer, and the fourth semiconductor layer is a second N-doped gallium nitride layer; the second semiconductor layer is a first P-doped gallium nitride layer, and the third semiconductor layer is a second P-doped gallium nitride layer. Specifically, in this embodiment, the composite dual-wavelength LED chip is sequentially disposed according to the following sequence: the sapphire substrate, a first undoped gallium nitride layer, a first N-doped gallium nitride layer, a blue light quantum well layer, a first P-doped gallium nitride layer, a second undoped gallium nitride layer, a second P-doped gallium nitride layer, a green light quantum well layer and a second N-doped gallium nitride layer. Wherein, the P-doped gallium nitride layer is a P-type doped GaN film; the N-doped gallium nitride layer is the N-type doped GaN film.
Furthermore, one side of the first P-doped gallium nitride layer, which is far away from the substrate, is provided with a first P-type electrode, one side of the first N-doped gallium nitride layer, which is far away from the substrate, is provided with a first N-type electrode, one side of the second P-doped gallium nitride layer, which is far away from the substrate, is provided with a second P-type electrode, and one side of the second N-doped gallium nitride layer, which is far away from the substrate, is provided with a second N-type electrode. Specifically, the chip process flow of the invention comprises the following steps: a series of processes such as gluing, exposure, development, etching and the like are carried out, and a first N-type electrode (first N-PAD) is made on the first N-doped gallium nitride layer, namely the green N-type electrode; a first P-type electrode (first P-PAD) is made on the first P-doped gallium nitride layer, namely the green light P-type electrode; a second P-type electrode (second P-PAD) is arranged on the second P-doped gallium nitride layer, namely the blue light P-type electrode; and manufacturing a second N-type electrode (second N-PAD) on the second N-doped gallium nitride layer, namely the N-type electrode of the blue light, and forming a final chip.
In a further preferred embodiment of the present invention, referring to fig. 3, fig. 4 and fig. 5, the first P-type electrode 101, the second P-type electrode 104, the first N-type electrode 102 and the second N-type electrode 103 are respectively located at four corners of the LED chip. Preferably, 4 electrodes are arranged to be on the same horizontal plane; of course, the carrier plates can be arranged not on the same horizontal plane according to the requirements of the carrier plates. Wherein, the electrode is in a cylinder shape, as shown in fig. 3; or in a cube shape, as shown in fig. 4; or in the shape of a cuboid, as shown in fig. 5.
Referring to fig. 6, the present invention further provides a method for manufacturing a composite dual wavelength LED chip, including:
s100, growing a first buffer layer on the upper surface of the substrate;
s200, growing a first semiconductor layer on one side of the first buffer layer, which is far away from the substrate;
s300, growing a first light-emitting layer on one side, away from the first buffer layer, of the first semiconductor layer;
s400, growing a second semiconductor layer on the side, away from the first semiconductor layer, of the first light-emitting layer;
s500, growing a second buffer layer on one side, away from the first light-emitting layer, of the second semiconductor layer;
s600, growing a third semiconductor layer on one side, away from the second semiconductor layer, of the second buffer layer;
s700, growing a second light-emitting layer on the side, away from the second buffer layer, of the third semiconductor layer;
s800, growing a fourth semiconductor layer on the side, away from the third semiconductor layer, of the second light emitting layer;
the first semiconductor layer and the fourth semiconductor layer are both first type semiconductor layers, and the second semiconductor layer and the third semiconductor layer are both second type semiconductor layers.
In the manufacturing method of the composite dual-wavelength LED chip, the first embodiment specifically comprises the following steps:
growing a first undoped gallium nitride layer on the upper surface of the sapphire substrate;
growing a first P-doped gallium nitride layer on one side of the first undoped gallium nitride layer, which is far away from the sapphire substrate;
growing a blue light quantum well layer on one side of the first P-doped gallium nitride layer, which is far away from the first undoped gallium nitride layer;
growing a first N-doped gallium nitride layer on one side of the blue light quantum well layer, which is far away from the first P-doped gallium nitride layer;
growing a second undoped gallium nitride layer on one side of the first N-doped gallium nitride layer, which is far away from the green light quantum well layer;
growing a second N-doped gallium nitride layer on one side of the second undoped gallium nitride layer, which is far away from the first N-doped gallium nitride layer;
growing a green light quantum well layer on one side of the second N-doped gallium nitride layer, which is far away from the second undoped gallium nitride layer;
growing a second P-doped gallium nitride layer on the green light quantum well layer at the side away from the second N-doped gallium nitride layer;
and forming a first P-type electrode on the first P-doped gallium nitride layer, forming a first N-type electrode on the first N-doped gallium nitride layer, forming a second P-type electrode on the second P-doped gallium nitride layer, and forming a second N-type electrode on the second N-doped gallium nitride layer.
In the manufacturing method of the composite dual-wavelength LED chip of the present invention, the second embodiment specifically includes:
growing a first undoped gallium nitride layer on the upper surface of the sapphire substrate;
growing a first N-doped gallium nitride layer on one side of the first undoped gallium nitride layer, which is far away from the sapphire substrate;
growing a blue light quantum well layer on one side of the first N-doped gallium nitride layer, which is far away from the first undoped gallium nitride layer;
growing a first P-doped gallium nitride layer on one side of the blue light quantum well layer, which is far away from the first N-doped gallium nitride layer;
growing a second undoped gallium nitride layer on one side of the first P-doped gallium nitride layer, which is far away from the green light quantum well layer;
growing a second P-doped gallium nitride layer on one side of the second undoped gallium nitride layer, which is far away from the first P-doped gallium nitride layer;
growing a green light quantum well layer on the side, away from the second undoped gallium nitride layer, of the second P-doped gallium nitride layer;
growing a second N-doped gallium nitride layer on the green light quantum well layer at the side away from the second P-doped gallium nitride layer;
and forming a first P-type electrode on the first P-doped gallium nitride layer, forming a first N-type electrode on the first N-doped gallium nitride layer, forming a second P-type electrode on the second P-doped gallium nitride layer, and forming a second N-type electrode on the second N-doped gallium nitride layer.
In summary, the composite dual-wavelength LED chip and the manufacturing method thereof disclosed by the present invention include: the light-emitting diode comprises a substrate, a first buffer layer positioned on the first side of the substrate, a first semiconductor layer positioned on one side, away from the substrate, of the first buffer layer, a first light-emitting layer positioned on one side, away from the first buffer layer, of the first semiconductor layer, a second semiconductor layer positioned on one side, away from the first semiconductor layer, of the first light-emitting layer, a second buffer layer positioned on one side, away from the first light-emitting layer, of the second semiconductor layer, a third semiconductor layer positioned on one side, away from the second semiconductor layer, of the second buffer layer, a second light-emitting layer positioned on one side, away from the second buffer layer, of the third semiconductor layer, and a fourth semiconductor layer positioned on one; the first semiconductor layer and the fourth semiconductor layer are both first type semiconductor layers, and the second semiconductor layer and the third semiconductor layer are both second type semiconductor layers. According to the invention, two light-emitting layers and four semiconductor layers are arranged, and a common electrode is not needed, so that the light-emitting layers can be independently controlled, and mixed light emission can be realized; there is no difference in driving voltage, and thus, emission brightness unevenness of two wavelengths is not caused.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (10)
1. A compound dual wavelength LED chip, characterized by, includes: the light-emitting diode comprises a substrate, a first buffer layer positioned on the first side of the substrate, a first semiconductor layer positioned on one side, away from the substrate, of the first buffer layer, a first light-emitting layer positioned on one side, away from the first buffer layer, of the first semiconductor layer, a second semiconductor layer positioned on one side, away from the first semiconductor layer, of the first light-emitting layer, a second buffer layer positioned on one side, away from the first light-emitting layer, of the second semiconductor layer, a third semiconductor layer positioned on one side, away from the second semiconductor layer, of the second buffer layer, a second light-emitting layer positioned on one side, away from the second buffer layer, of the third semiconductor layer, and a fourth semiconductor layer positioned on one; the first semiconductor layer and the fourth semiconductor layer are both first type semiconductor layers, and the second semiconductor layer and the third semiconductor layer are both second type semiconductor layers.
2. The composite dual wavelength LED chip of claim 1, wherein the substrate is a sapphire substrate.
3. The composite dual wavelength LED chip of claim 1, wherein the first buffer layer is a first undoped gallium nitride layer; the second buffer layer is a second undoped gallium nitride layer.
4. The composite dual wavelength LED chip of claim 1, wherein the first light emitting layer is a blue quantum well layer; the second light emitting layer is a green light quantum well layer.
5. The composite dual wavelength LED chip of claim 4, wherein the first semiconductor layer is a first P-doped gallium nitride layer, and the fourth semiconductor layer is a second P-doped gallium nitride layer; the second semiconductor layer is a first N-doped gallium nitride layer, and the third semiconductor layer is a second N-doped gallium nitride layer.
6. The composite dual wavelength LED chip of claim 4, wherein the first semiconductor layer is a first N-doped gallium nitride layer, and the fourth semiconductor layer is a second N-doped gallium nitride layer; the second semiconductor layer is a first P-doped gallium nitride layer, and the third semiconductor layer is a second P-doped gallium nitride layer.
7. The composite dual-wavelength LED chip according to claim 5 or 6, wherein a first P-type electrode is disposed on a side of the first P-doped gallium nitride layer facing away from the substrate, a first N-type electrode is disposed on a side of the first N-doped gallium nitride layer facing away from the substrate, a second P-type electrode is disposed on a side of the second P-doped gallium nitride layer facing away from the substrate, and a second N-type electrode is disposed on a side of the second N-doped gallium nitride layer facing away from the substrate.
8. A manufacturing method of a composite dual-wavelength LED chip is characterized by comprising the following steps:
growing a first buffer layer on the upper surface of the substrate;
growing a first semiconductor layer on one side of the first buffer layer, which is far away from the substrate;
growing a first light-emitting layer on one side of the first semiconductor layer, which is far away from the first buffer layer;
growing a second semiconductor layer on the side, away from the first semiconductor layer, of the first light-emitting layer;
growing a second buffer layer on one side of the second semiconductor layer, which is far away from the first light-emitting layer;
growing a third semiconductor layer on one side of the second buffer layer, which is far away from the second semiconductor layer;
growing a second light-emitting layer on one side of the third semiconductor layer, which is far away from the second buffer layer;
growing a fourth semiconductor layer on the side, away from the third semiconductor layer, of the second light-emitting layer;
the first semiconductor layer and the fourth semiconductor layer are both first type semiconductor layers, and the second semiconductor layer and the third semiconductor layer are both second type semiconductor layers.
9. The method of manufacturing a composite dual wavelength LED chip according to claim 8, wherein the method of manufacturing a composite dual wavelength LED chip specifically comprises:
growing a first undoped gallium nitride layer on the upper surface of the sapphire substrate;
growing a first P-doped gallium nitride layer on one side of the first undoped gallium nitride layer, which is far away from the sapphire substrate;
growing a blue light quantum well layer on one side of the first P-doped gallium nitride layer, which is far away from the first undoped gallium nitride layer;
growing a first N-doped gallium nitride layer on one side of the blue light quantum well layer, which is far away from the first P-doped gallium nitride layer;
growing a second undoped gallium nitride layer on one side of the first N-doped gallium nitride layer, which is far away from the green light quantum well layer;
growing a second N-doped gallium nitride layer on one side of the second undoped gallium nitride layer, which is far away from the first N-doped gallium nitride layer;
growing a green light quantum well layer on one side of the second N-doped gallium nitride layer, which is far away from the second undoped gallium nitride layer;
growing a second P-doped gallium nitride layer on the green light quantum well layer at the side away from the second N-doped gallium nitride layer;
and forming a first P-type electrode on the first P-doped gallium nitride layer, forming a first N-type electrode on the first N-doped gallium nitride layer, forming a second P-type electrode on the second P-doped gallium nitride layer, and forming a second N-type electrode on the second N-doped gallium nitride layer.
10. The method of manufacturing a composite dual wavelength LED chip according to claim 8, wherein the method of manufacturing a composite dual wavelength LED chip specifically comprises:
growing a first undoped gallium nitride layer on the upper surface of the sapphire substrate;
growing a first N-doped gallium nitride layer on one side of the first undoped gallium nitride layer, which is far away from the sapphire substrate;
growing a blue light quantum well layer on one side of the first N-doped gallium nitride layer, which is far away from the first undoped gallium nitride layer;
growing a first P-doped gallium nitride layer on one side of the blue light quantum well layer, which is far away from the first N-doped gallium nitride layer;
growing a second undoped gallium nitride layer on one side of the first P-doped gallium nitride layer, which is far away from the green light quantum well layer;
growing a second P-doped gallium nitride layer on one side of the second undoped gallium nitride layer, which is far away from the first P-doped gallium nitride layer;
growing a green light quantum well layer on the side, away from the second undoped gallium nitride layer, of the second P-doped gallium nitride layer;
growing a second N-doped gallium nitride layer on the green light quantum well layer at the side away from the second P-doped gallium nitride layer;
and forming a first P-type electrode on the first P-doped gallium nitride layer, forming a first N-type electrode on the first N-doped gallium nitride layer, forming a second P-type electrode on the second P-doped gallium nitride layer, and forming a second N-type electrode on the second N-doped gallium nitride layer.
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060192223A1 (en) * | 2005-02-28 | 2006-08-31 | Samsung Electro-Mechanics Co., Ltd. | Nitride semiconductor light emitting device |
| CN101183701A (en) * | 2007-12-10 | 2008-05-21 | 华中科技大学 | LED chip and method for preparing the same |
| US20090033204A1 (en) * | 2007-08-03 | 2009-02-05 | Au Optronics Corp. | White light led |
| US20100006885A1 (en) * | 2005-09-15 | 2010-01-14 | Epiplus Co., Ltd | Arrangement of electrodes for light emitting device |
| CN102244171A (en) * | 2011-06-20 | 2011-11-16 | 复旦大学 | Fluorescent powder-free white light LED (light-emitting diode) chip with high color development performance |
| CN103378081A (en) * | 2012-04-27 | 2013-10-30 | 华夏光股份有限公司 | Semiconductor light emitting device and production method thereof |
| CN103378122A (en) * | 2012-04-19 | 2013-10-30 | 华夏光股份有限公司 | Semiconductor light, light emitting diode array and methods of manufacture thereof |
| CN104409966A (en) * | 2014-12-11 | 2015-03-11 | 北京工业大学 | Dual-wavelength gallium-nitrogen-based semiconductor laser chip structure |
| CN109599466A (en) * | 2018-12-03 | 2019-04-09 | 广东工业大学 | A kind of dual-wavelength LEDs epitaxial structure and preparation method thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100382481B1 (en) * | 2000-06-09 | 2003-05-01 | 엘지전자 주식회사 | White Light Emitting Diode and Fabricating Method for the same |
| CN101257081A (en) * | 2008-04-03 | 2008-09-03 | 北京大学 | Dual wavelength single chip LED |
| CN101582418B (en) * | 2008-05-16 | 2012-10-03 | 北京大学 | Tricolor single-chip white light-emitting diode regulated through electric injection |
| KR101114782B1 (en) * | 2009-12-10 | 2012-02-27 | 엘지이노텍 주식회사 | Light emitting device, light emitting device package and method for fabricating the same |
-
2019
- 2019-12-31 WO PCT/CN2019/130611 patent/WO2021134510A1/en active Application Filing
- 2019-12-31 CN CN201980003482.7A patent/CN111149223A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060192223A1 (en) * | 2005-02-28 | 2006-08-31 | Samsung Electro-Mechanics Co., Ltd. | Nitride semiconductor light emitting device |
| US20100006885A1 (en) * | 2005-09-15 | 2010-01-14 | Epiplus Co., Ltd | Arrangement of electrodes for light emitting device |
| US20090033204A1 (en) * | 2007-08-03 | 2009-02-05 | Au Optronics Corp. | White light led |
| CN101183701A (en) * | 2007-12-10 | 2008-05-21 | 华中科技大学 | LED chip and method for preparing the same |
| CN102244171A (en) * | 2011-06-20 | 2011-11-16 | 复旦大学 | Fluorescent powder-free white light LED (light-emitting diode) chip with high color development performance |
| CN103378122A (en) * | 2012-04-19 | 2013-10-30 | 华夏光股份有限公司 | Semiconductor light, light emitting diode array and methods of manufacture thereof |
| CN103378081A (en) * | 2012-04-27 | 2013-10-30 | 华夏光股份有限公司 | Semiconductor light emitting device and production method thereof |
| CN104409966A (en) * | 2014-12-11 | 2015-03-11 | 北京工业大学 | Dual-wavelength gallium-nitrogen-based semiconductor laser chip structure |
| CN109599466A (en) * | 2018-12-03 | 2019-04-09 | 广东工业大学 | A kind of dual-wavelength LEDs epitaxial structure and preparation method thereof |
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