KR101114782B1 - Light emitting device, light emitting device package and method for fabricating the same - Google Patents

Abstract

The light emitting device according to the embodiment may include a first light emitting structure; A nonconductive semiconductor layer on the first light emitting structure; A second light emitting structure on the nonconductive semiconductor layer; And a common electrode electrically connected to the first light emitting structure and the second light emitting structure at the same time.

Light emitting element

Description

LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND METHOD FOR FABRICATING THE SAME}

The embodiment relates to a light emitting device, a light emitting device package, and a light emitting device manufacturing method.

Light emitting diodes (LEDs) are semiconductor light emitting devices that convert current into light. Recently, the light emitting diode is gradually increasing in brightness, and is being used as a light source for a display, an automotive light source, and an illumination light source. A light emitting diode that emits white light having high efficiency by using a fluorescent material or by combining various color light emitting diodes. It is also possible to implement.

On the other hand, since the light emitting diode has the rectifying characteristics of a general diode, when connected to an AC power source, the light is repeatedly turned on and off according to the direction of the current, so that light cannot be continuously generated and may be damaged by a reverse current. .

Therefore, various researches for using a light emitting diode directly connected to an AC power source are in progress.

The embodiment provides a light emitting device having a new structure.

The embodiment provides a light emitting device that generates light continuously by receiving AC power.

The light emitting device according to the embodiment may include a first light emitting structure; A nonconductive semiconductor layer on the first light emitting structure; A second light emitting structure on the nonconductive semiconductor layer; And a common electrode electrically connected to the first light emitting structure and the second light emitting structure at the same time.

The embodiment can provide a light emitting device having a new structure.

The embodiment can provide a light emitting device that generates light continuously by receiving AC power.

In the description of an embodiment, each layer (film), region, pattern, or structure is formed “on” or “under” a substrate, each layer (film), region, pad, or pattern. In the case where it is described as "to", "on" and "under" include both "directly" or "indirectly" formed. Also, the criteria for top, bottom, or bottom of each layer will be described with reference to the drawings.

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size of each component does not necessarily reflect the actual size.

Hereinafter, a light emitting device, a light emitting device manufacturing method, and a light emitting device package according to embodiments will be described in detail with reference to the accompanying drawings.

<First Embodiment>

1 is a cross-sectional view of a light emitting device 100 according to the first embodiment, and FIG. 2 is a top view of the light emitting device 100 according to the first embodiment.

1 and 2, the light emitting device 100 according to the first embodiment may include a substrate 110, a base layer 120, a first conductivity type semiconductor layer 130, a first active layer 140, and a first light emitting device 100. The second conductive semiconductor layer 150, the nonconductive semiconductor layer 160, the third conductive semiconductor layer 170, the second active layer 180, the fourth conductive semiconductor layer 190, and the first electrode 131. , A second electrode 191 and a common electrode 165.

The first conductive semiconductor layer 130, the first active layer 140, and the second conductive semiconductor layer 150 form a first light emitting structure A, and the third conductive semiconductor layer 170, The second active layer 180 and the fourth conductive semiconductor layer 190 form the second light emitting structure B.

The light emitting device 100 may continuously generate light by receiving an external alternating current (AC) power. That is, the alternating current (AC) power alternately supplies a positive voltage and a negative voltage to the light emitting device 100. The first light emission is performed by any one of a positive voltage and a negative voltage. The structure A emits light, and the second light emitting structure B emits light by the other of (+) voltage and (-) voltage, so that the light emitting device 100 may continuously generate light. .

Hereinafter, the components of the light emitting device 100 will be described in detail.

The substrate 110 may use at least one of sapphire (Al ₂ O ₃ ), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, but is not limited thereto.

The base layer 120 may be formed on the substrate 110.

The base layer 120 may alleviate the lattice constant difference between the substrate 110 and the first conductivity-type semiconductor layer 130, thereby allowing the first conductivity-type semiconductor layer 130 to grow with good crystallinity. You can do that.

For example, the base layer 120 may be formed of a plurality of layers including at least one of a buffer layer and an undoped semiconductor layer. In addition, the base layer 120 is, for example, a semiconductor having a composition formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0 ≤y≤1, 0≤x + y≤1) It may be formed of a material, but is not limited thereto.

The first light emitting structure A may be formed on the base layer 120. The first light emitting structure A may be formed on the first conductive semiconductor layer 130 and the first conductive semiconductor layer 130 on the first active layer 140 and the first active layer 140. The second conductive semiconductor layer 150 is included.

The first conductivity-type semiconductor layer 130 may include, for example, an n-type semiconductor layer, wherein the n-type semiconductor layer is In _x Al _y Ga _{1 -x- y} N (0 _{≦ x ≦} 1, A semiconductor material having a composition formula of 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1), for example, InAlGaN, GaN, AlGaN, InGaN, AlN, InN, AlInN, and the like, and may be selected from Si, Ge, Sn, and C. N-type dopants may be doped.

The first active layer 140 may be formed on the first conductive semiconductor layer 130. The first active layer 140 may be formed of a single quantum well structure or a multi quantum well structure (MQW). The first active layer 140 may generate light using carriers (electrons and holes) supplied by the first and second conductivity-type semiconductor layers 130 and 150.

The first active layer 140 is, for example, semiconductor material having a compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0 ≤y≤1, 0≤x + y≤1) It may be formed to include.

The second conductivity type semiconductor layer 150 may be formed on the first active layer 140. The second conductivity-type semiconductor layer 150 may be implemented as, for example, a p-type semiconductor layer, wherein the p-type semiconductor layer is In _x Al _y Ga _{1 -x- y} N (0 _{≦ x ≦} 1, 0 ≤ y ≤ 1, 0 ≤ x + y ≤ 1), for example, may be selected from InAlGaN, GaN, AlGaN, InGaN, AlN, InN, etc., Mg, Zn, Ca, Sr, Ba, etc. P-type dopant may be doped.

In addition, a clad layer (not shown) doped with an n-type or p-type dopant may be formed on and / or under the first active layer 140, and the clad layer (not shown) may be an AlGaN layer or an InAlGaN layer. It can be implemented as.

The non-conductive semiconductor layer 160 may be formed on the second conductive semiconductor layer 150. That is, the nonconductive semiconductor layer 160 is between the second conductive semiconductor layer 150 and the third conductive semiconductor layer 170, that is, the first light emitting structure A and the second light emitting structure. It may be formed between (B).

The non-conductive semiconductor layer 160 may be formed of a semiconductor material having a compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0 ≤y≤1, 0≤x + y≤1) But it is not limited thereto.

The nonconductive semiconductor layer 160 has a carrier concentration significantly lower than the first, second, third, and fourth conductivity-type semiconductor layers 130, 150, 170, and 190, for example, 10 ¹⁶ cm ⁻² or less. , Practically no current flows. Accordingly, the nonconductive semiconductor layer 160 may insulate the first light emitting structure A and the second light emitting structure B from each other.

The thickness of the nonconductive semiconductor layer 160 may be, for example, 10 nm to 1000 nm. When the nonconductive semiconductor layer 160 has a thickness of less than 10 nm, a leakage current is generated between the first light emitting structure A and the second light emitting structure B by tunneling, for example, to emit the light. The device 100 may not operate properly. In addition, when the nonconductive semiconductor layer 160 has a thickness exceeding 1000 nm, the process of forming the common electrode 165 may be complicated, and the thickness of the common electrode 165 may be thick.

The second light emitting structure B may be formed on the nonconductive semiconductor layer 160. The second light emitting structure B may be formed on the second active layer 180 and the second active layer 180 on the third conductive semiconductor layer 170 and the third conductive semiconductor layer 170. The fourth conductive semiconductor layer 190 is included.

The third conductivity-type semiconductor layer 170 may include, for example, an n-type semiconductor layer, wherein the n-type semiconductor layer is In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0 ≤ y ≤ 1, 0 ≤ x + y ≤ 1), for example, may be selected from InAlGaN, GaN, AlGaN, InGaN, AlN, InN, etc., n, such as Si, Ge, Sn, C Type dopants may be doped.

The second active layer 180 may be formed on the third conductive semiconductor layer 170. The second active layer 180 may be formed of a single quantum well structure or a multi quantum well structure (MQW). The second active layer 180 may generate light using carriers (electrons and holes) supplied by the third and fourth conductive semiconductor layers 170 and 190.

The second active layer 180 is, for example, semiconductor material having a compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0 ≤y≤1, 0≤x + y≤1) It may be formed to include.

The fourth conductive semiconductor layer 190 may be formed on the second active layer 180. The fourth conductivity-type semiconductor layer 190 may be implemented, for example, as a p-type semiconductor layer, wherein the p-type semiconductor layer is In _x Al _y Ga _{1 -x- y} N (0 _{≦ x ≦} 1, 0 ≤ y ≤ 1, 0 ≤ x + y ≤ 1), for example, may be selected from InAlGaN, GaN, AlGaN, InGaN, AlN, InN, etc., Mg, Zn, Ca, Sr, Ba, etc. P-type dopant may be doped.

In addition, a clad layer (not shown) doped with an n-type or p-type dopant may be formed on and / or under the second active layer 180, and the clad layer (not shown) may be an AlGaN layer or an InAlGaN layer. It can be implemented as.

Meanwhile, p-type dopants may be doped into the first and third conductivity-type semiconductor layers 130 and 170, and n-type dopants may be doped into the second and fourth conductivity-type semiconductor layers 150 and 190, but embodiments are not limited thereto.

The base layer 120, the first light emitting structure A, the nonconductive semiconductor layer 160, and the second light emitting structure B may be formed by metal organic chemical vapor deposition (MOCVD) or chemical vapor deposition (CVD). Chemical Vapor Deposition), Plasma-Enhanced Chemical Vapor Deposition (PECVD), Molecular Beam Epitaxy (MBE) or Hydride Vapor Phase Epitaxy (HVPE) But it is not limited thereto.

The common electrode 165 may be electrically connected to the second conductive semiconductor layer 150 and the third conductive semiconductor layer 170. That is, the common electrode 165 may be electrically connected to the first light emitting structure A and the second light emitting structure B at the same time.

For example, as illustrated, the common electrode 165 may include at least a portion of side surfaces of the third conductive semiconductor layer 170 and the non-conductive semiconductor layer 160 and the second conductive semiconductor layer 150. It may be formed on at least a portion of the top and side of the).

In addition, as illustrated in FIG. 2, the common electrode 165 may include the third conductive semiconductor layer 170, the nonconductive semiconductor layer 160, and the current spreading effect of the light emitting device 100. Although it may be formed to surround three surfaces of the second conductivity-type semiconductor layer 150, the shape of the common electrode 165 is not limited.

In order to form the common electrode 165, mesa etching may be performed to expose the second conductivity-type semiconductor layer 150 to the light emitting device 100, but is not limited thereto.

Since the common electrode 165 is electrically connected to an external terminal in a ground state by, for example, a third wire 166, the second conductive semiconductor layer 150 and the third conductive semiconductor layer are electrically connected to each other. 170 has a ground state by the common electrode 165.

The common electrode 165 may be formed to include at least one of copper (Cu), gold (Au), aluminum (Al), titanium (Ti), and chromium (Cr) by a deposition process and / or a plating process. .

A first electrode 131 may be formed on the first conductive semiconductor layer 130, and a second electrode 191 may be formed on the fourth conductive semiconductor layer 190. To form the first electrode 131, mesa etching may be performed to expose the first conductivity-type semiconductor layer 130 to the light emitting device 100.

The first and second electrodes 131 and 191 are formed to include at least one of copper (Cu), gold (Au), aluminum (Al), titanium (Ti), and chromium (Cr) by a deposition process and / or a plating process. Can be.

The first electrode 131 supplies power to the first light emitting structure A, and the second electrode 191 supplies power to the second light emitting structure B.

In this case, the first electrode 131 and the second electrode 191 may be electrically connected to the same AC power source. For example, a first wire 132 and a second wire 192 may be connected to the first electrode 131 and the second electrode 191, respectively, and the first and second wires 132 and 192 may be connected to the same outside. May be electrically connected to an AC power source.

On the other hand, the external AC power may be provided to have a peak to peak voltage suitable for driving the light emitting device 100. For example, when the light emitting device 100 has an operating voltage of 3.3V, the external AC power may have a peak to peak voltage of −3.3V to 3.3V. However, this is not limitative.

Accordingly, when the AC power supplies a negative voltage by the first and second electrodes 131 and 191 and the common electrode 165, the first light emitting structure A emits light (+). When the voltage is supplied, the second light emitting structure B emits light, so that the first and second light emitting structures A and B emit light alternately, so that the light emitting device 100 continuously emits light. Can be generated.

In addition, since the light emitting device 100 emits light using both (+) and (−) voltages, the risk of damage caused by reverse current as in the conventional light emitting device may be reduced.

The AC power source AC is provided to the common electrode 165, and the first and second electrodes 131 and 191 may have a ground state, but the embodiment is not limited thereto.

3 is a schematic circuit diagram of a light emitting device 100 according to an embodiment.

Referring to FIG. 3, one side of the first light emitting structure A and the second light emitting structure B constituting the light emitting device 100 is connected to an AC power source, and the other side is grounded. Can be represented.

The alternating current (AC) power alternately supplies a positive voltage and a negative voltage. When the negative power is supplied, the first light emitting structure A emits light. When supplied, the second light emitting structure B may emit light, and the light emitting device 100 may continuously generate light.

Meanwhile, the first light emitting structure A emits light when the positive voltage is supplied according to the design of the light emitting device 100, and the second light emitting structure B when the negative voltage is supplied. This may emit light, but is not limited thereto.

Hereinafter, a method of manufacturing the light emitting device 100 according to the first embodiment will be described. However, descriptions that overlap with those described above will be omitted.

4 to 7 illustrate a method of manufacturing the light emitting device 100 according to the first embodiment. However, the manufacturing method and the order of the light emitting device 100 are not limited.

Referring to FIG. 4, the base layer 120, the first light emitting structure A, the nonconductive semiconductor layer 160, and the second light emitting structure B are sequentially formed on the substrate 110. Can be.

The first light emitting structure A may be formed on the first conductive semiconductor layer 130 and the first conductive semiconductor layer 130 on the first active layer 140 and the first active layer 140. And a second conductive semiconductor layer 150, and the second light emitting structure B is formed on the third conductive semiconductor layer 170 and the third conductive semiconductor layer 170. 180) and the fourth conductive semiconductor layer 190 on the second active layer 180.

The base layer 120, the first light emitting structure A, the nonconductive semiconductor layer 160, and the second light emitting structure B may be formed by metal organic chemical vapor deposition (MOCVD) or chemical vapor deposition (CVD). Chemical Vapor Deposition), Plasma-Enhanced Chemical Vapor Deposition (PECVD), Molecular Beam Epitaxy (MBE) or Hydride Vapor Phase Epitaxy (HVPE) But it is not limited thereto.

For example, the base layer 120 may be formed by injecting trimethyl aluminum gas (TMAl), trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), and nitrogen gas (N ₂ ) into the chamber. It doesn't happen.

The first and third conductivity-type semiconductor layers 130 and 170 may include, for example, n-type impurities such as trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ), and silicon (Si) in the chamber. The silane gas (SiH ₄ ) including may be injected and formed, but is not limited thereto.

In the first and second active layers 140 and 180, for example, trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ), and trimethyl indium gas (TMIn) may be injected into the chamber. A multi quantum well structure having a GaN structure may be formed, but is not limited thereto.

The second and fourth conductivity-type semiconductor layers 150 and 190 may include, for example, p-type impurities such as trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ), and magnesium (Mg) in the chamber. Bicetyl cyclopentadienyl magnesium (EtCp ₂ Mg) {Mg (C ₂ H ₅ C ₅ H ₄ ) ₂ } including may be formed by injection, but is not limited thereto.

The nonconductive semiconductor layer 160 may be formed by, for example, injecting trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), and nitrogen gas (N ₂ ) into the chamber, but is not limited thereto.

Referring to FIG. 5, a first electrode 131 may be formed on the first conductive semiconductor layer 130, and a second electrode 191 may be formed on the fourth conductive semiconductor layer 190. To form the first electrode 131, mesa etching may be performed to expose the first conductivity-type semiconductor layer 130 to the light emitting device 100.

Referring to FIG. 6, the common electrode 165 may be electrically connected to the second conductive semiconductor layer 150 and the third conductive semiconductor layer 170.

For example, as illustrated, the common electrode 165 may include at least a portion of side surfaces of the third conductive semiconductor layer 170 and the non-conductive semiconductor layer 160 and the second conductive semiconductor layer 150. It may be formed on at least a portion of the top and side of the).

In order to form the common electrode 165, mesa etching may be performed to expose the second conductivity-type semiconductor layer 150 to the light emitting device 100, but is not limited thereto.

Referring to FIG. 7, the first and second wires 132 and 192 are connected to the first and second electrodes 131 and 191, and the third wire 166 is connected to the common electrode 165 to emit light. The device 100 may be connected to an external AC power source.

In this case, the first and second wires 132 and 192 may be connected to the same AC power, and the third wire 166 may be connected to an external terminal in a grounded state.

Accordingly, the light emitting device 100 according to the first embodiment may receive light continuously by receiving AC power.

Second Embodiment

Hereinafter, the light emitting device 100B and the manufacturing method thereof according to the second embodiment will be described in detail. In the description of the second embodiment, the same parts as those of the first embodiment are referred to the first embodiment, and redundant description thereof will be omitted.

The light emitting device 100B according to the second embodiment is the same as the light emitting device 100 according to the first embodiment except for the shape of the common electrode.

8 is a cross-sectional view of the light emitting device 100B according to the second embodiment.

Referring to FIG. 8, the light emitting device 100B includes a substrate 110, a base layer 120 on the substrate 110, a first light emitting structure A on the base layer 120, and the first light emitting element 100B. First non-conductive semiconductor layer 160 on the light emitting structure (A), the first light emitting structure (A) and the second light emitting structure (B) on the non-conductive semiconductor layer 160 Electrically connecting an electrode 131, a second electrode 191 for supplying power to the second light emitting structure B, and the first and second light emitting structures A and B with an external terminal in a ground state. And a common electrode 165b.

The common electrode 165b is formed on the top and side surfaces of the third conductive semiconductor layer 170, the side surfaces of the nonconductive semiconductor layer 160, and the top and side surfaces of the second conductive semiconductor layer 150. Can be.

In order to form the common electrode 165b, mesa etching may be performed to expose the second conductivity-type semiconductor layer 150 to the light emitting device 100B, but the embodiment is not limited thereto.

In addition, the common electrode 165b may be designed to have various shapes in order to improve the current spreading effect of the light emitting device 100B, but is not limited thereto.

Third Embodiment

Hereinafter, the light emitting device 100C and the manufacturing method thereof according to the third embodiment will be described in detail. In the description of the third embodiment, the same parts as those of the first embodiment are referred to the first embodiment, and redundant description thereof will be omitted.

The light emitting device 100C according to the third embodiment is the same as the light emitting device 100 according to the first embodiment except for the shape of the common electrode.

9 is a sectional view of a light emitting device 100C according to the third embodiment.

Referring to FIG. 9, the light emitting device 100C includes a substrate 110, a base layer 120 on the substrate 110, a first light emitting structure A on the base layer 120, and the first layer. A first electrode for supplying power to the non-conductive semiconductor layer 160 on the light emitting structure (A), the second light emitting structure (B), the first light emitting structure (A) on the non-conductive semiconductor layer 160 131, a second electrode 191 for supplying power to the second light emitting structure B, and a material for electrically connecting the first and second light emitting structures AB to an external terminal in a ground state, respectively. First and second common electrodes 165c and 165d are included.

The first common electrode 165c may be formed on the second conductive semiconductor layer 150, and the second common electrode 165d may be formed on the third conductive semiconductor layer 170. have.

For example, the first and second common electrodes 165c and 165d may be electrically connected to an external terminal in a grounded state by the fourth and fifth wires 166c and 166d, respectively, but are not limited thereto.

<Fourth Embodiment>

Hereinafter, the light emitting device 100D according to the fourth embodiment and a manufacturing method thereof will be described in detail. In the description of the fourth embodiment, the same parts as in the first embodiment will be described with reference to the first embodiment, and redundant description thereof will be omitted.

The light emitting device 100D according to the fourth embodiment is the same as the light emitting device 100 according to the first embodiment except that the arrangement of the electrodes is a vertical light emitting device having a vertical direction.

10 is a cross-sectional view of the light emitting device 100D according to the fourth embodiment.

Referring to FIG. 10, the light emitting device 100D includes a conductive support member 195, a reflective layer 194 on the conductive support member 195, and a second light emitting structure B on the reflective layer 194. And a nonconductive semiconductor layer 160 on the second light emitting structure B, a first light emitting structure A on the nonconductive semiconductor layer 160, and a first light emitting structure A on the second light emitting structure A. A first electrode 131 and a common electrode 165 electrically connecting the first and second light emitting structures A and B to an external terminal in a ground state.

The conductive support member 195 together with the first electrode 131 provides power to the light emitting device 100D. That is, the conductive support member 195 and the first electrode 131 are electrically connected to the same external AC power source.

The conductive support member 195 may include titanium (Ti), chromium (Cr), nickel (Ni), aluminum (Al), platinum (Pt), gold (Au), tungsten (W), copper (Cu), and molybdenum ( Mo) or at least one of a semiconductor substrate implanted with impurities.

The reflective layer 194 may include at least one of silver (Ag), aluminum (Al), platinum (Pt), or palladium (Pd) having high reflectance.

In the light emitting device 100 of FIG. 1, the light emitting device 100D is attached to the first light emitting structure A after the conductive support member 195 is formed below the second light emitting structure B. The substrate may be provided by removing the substrate (not shown) and forming the first electrode 131 on the first semiconductor layer 130.

<Light Emitting Device Package>

11 is a cross-sectional view of a light emitting device package including the light emitting device 100 according to the embodiment.

Referring to FIG. 11, the light emitting device package according to the embodiment may include a body part 20, a first electrode layer 31 and a second electrode layer 32 installed on the body part 20, and the body part 20. The light emitting device 100 is installed at and electrically connected to the first electrode layer 31 and the second electrode layer 32, and a molding member 40 surrounding the light emitting device 100.

The body portion 20 may include a silicon material, a synthetic resin material, or a metal material, and an inclined surface may be formed around the light emitting device 100.

The first electrode layer 31 and the second electrode layer 32 are electrically separated from each other, and provide power to the light emitting device 100. In addition, the first electrode layer 31 and the second electrode layer 32 may increase light efficiency by reflecting the light generated from the light emitting device 100, and externally generate heat generated from the light emitting device 100. May also act as a drain.

The light emitting device 100 may be installed on the body portion 20 or may be installed on the first electrode layer 31 or the second electrode layer 32.

The first and second wires 132 and 192 of the light emitting device 100 may be electrically connected to either the first electrode layer 31 or the second electrode layer 32, and the third wire 166 may be It may be electrically connected to the other of the first electrode layer 31 or the second electrode layer 32. However, this is not limitative.

The molding member 40 may surround the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 40 may include a phosphor to change the wavelength of the light emitted from the light emitting device 100.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

In addition, the above description has been made with reference to the embodiment, which is merely an example, and is not intended to limit the present invention. Those skilled in the art to which the present invention pertains will be illustrated as above without departing from the essential characteristics of the present embodiment. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

1 to 10 illustrate a light emitting device, a light emitting device package, and a light emitting device package according to embodiments.

Claims (20)

A first light emitting structure; A nonconductive semiconductor layer on the first light emitting structure; A second light emitting structure on the nonconductive semiconductor layer; And A common electrode electrically connected to the first light emitting structure and the second light emitting structure simultaneously; The first light emitting structure includes a first conductive semiconductor layer, a first active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the first active layer, The second light emitting structure includes a third conductive semiconductor layer, a second active layer on the third conductive semiconductor layer, and a fourth conductive semiconductor layer on the second active layer. delete The method of claim 1, The common electrode is a light emitting device electrically connected to the second conductive semiconductor layer and the third conductive semiconductor layer. The method according to claim 1 or 3, A light emitting device comprising a first electrode on the first conductive semiconductor layer and a second electrode on the fourth conductive semiconductor layer. The method of claim 3, The common electrode is formed on at least a portion of the upper surface and the side of the second conductive semiconductor layer, at least a portion of the side of the non-conductive semiconductor layer, and at least a portion of the side of the third conductive semiconductor layer. The method of claim 5, The common electrode is formed on at least a portion of the upper surface of the third conductive semiconductor layer. The method of claim 3, The common electrode includes a first common electrode on the second conductive semiconductor layer and a second common electrode on the third conductive semiconductor layer. The method of claim 3, The common electrode includes at least one of copper (Cu), gold (Au), aluminum (Al), titanium (Ti), or chromium (Cr). A first light emitting structure; A nonconductive semiconductor layer on the first light emitting structure; A second light emitting structure on the nonconductive semiconductor layer; And A common electrode electrically connected to the first light emitting structure and the second light emitting structure simultaneously; The common electrode is a light emitting device connected to an external terminal electrically grounded. The method of claim 4, wherein The first electrode and the second electrode is electrically connected to the same AC power source, the light emitting device receives power from the AC power source. A first light emitting structure; A nonconductive semiconductor layer on the first light emitting structure; A second light emitting structure on the nonconductive semiconductor layer; And A common electrode electrically connected to the first light emitting structure and the second light emitting structure simultaneously; A light emitting device comprising a substrate under the first light emitting structure. The method of claim 1, And the first conductive semiconductor layer and the third conductive semiconductor layer are doped with n-type dopants, and the second conductive semiconductor layer and the fourth conductive semiconductor layer are doped with p-type dopants. The method according to any one of claims 1, 9, and 11, The carrier concentration of the nonconductive semiconductor layer is 0 cm ^-2 to 10 ¹⁶ cm ^-2 . The method according to any one of claims 1, 9, and 11, The non-conductive semiconductor layer has a thickness of 10nm to 1000nm. The method according to any one of claims 1, 9, and 11, The first light emitting structure, the second light emitting structure and the non-conductive semiconductor layer have a composition formula of In _x Al _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). A light emitting device comprising a semiconductor material. Forming a first light emitting structure on the substrate; Forming a nonconductive semiconductor layer on the first light emitting structure; Forming a second light emitting structure on the nonconductive semiconductor layer; And And forming a common electrode electrically connected to the first light emitting structure and the second light emitting structure at the same time. The method of claim 16, The first light emitting structure, the nonconductive semiconductor layer, and the second light emitting structure may be formed by organometallic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD), plasma chemical vapor deposition (PECVD), molecular beam growth (MBE), or hydride vapor deposition ( HVPE) light emitting device manufacturing method formed by at least one method. The method of claim 16, The first light emitting structure includes a first conductive semiconductor layer, a first active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the first active layer, The second light emitting structure includes a third conductive semiconductor layer, a second active layer on the third conductive semiconductor layer, and a fourth conductive semiconductor layer on the second active layer. The method of claim 18, The common electrode is formed by vapor deposition or plating so as to be electrically connected to the second conductive semiconductor layer and the third conductive semiconductor layer after mesa etching to expose the second conductive semiconductor layer. Way. Body portion; A first electrode layer and a second electrode layer on the body portion; A light emitting device electrically connected to the first electrode layer and the second electrode layer on the body portion; And A molding member surrounding the light emitting element on the body portion, The light emitting device is electrically connected to a first light emitting structure, a nonconductive semiconductor layer on the first light emitting structure, a second light emitting structure on the nonconductive semiconductor layer, and the first light emitting structure and the second light emitting structure simultaneously. It includes a common electrode connected to, A light emitting device package for emitting light from one of the first and second light emitting structure according to the power polarity.

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