CN108878601B - A kind of infrared flip LED epitaxial slice structure of GaAs base and preparation method thereof - Google Patents
A kind of infrared flip LED epitaxial slice structure of GaAs base and preparation method thereof Download PDFInfo
- Publication number
- CN108878601B CN108878601B CN201810676839.5A CN201810676839A CN108878601B CN 108878601 B CN108878601 B CN 108878601B CN 201810676839 A CN201810676839 A CN 201810676839A CN 108878601 B CN108878601 B CN 108878601B
- Authority
- CN
- China
- Prior art keywords
- gaas
- layer
- thickness
- atom
- doping concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 150
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 230000007704 transition Effects 0.000 claims abstract description 22
- 230000004888 barrier function Effects 0.000 claims abstract description 21
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 19
- 230000007797 corrosion Effects 0.000 claims abstract description 18
- 238000005260 corrosion Methods 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 16
- 230000005855 radiation Effects 0.000 claims abstract description 14
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 37
- 229910000070 arsenic hydride Inorganic materials 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 16
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 claims description 15
- 229910007264 Si2H6 Inorganic materials 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 239000002352 surface water Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 4
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical group [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000000605 extraction Methods 0.000 abstract description 7
- 230000031700 light absorption Effects 0.000 abstract description 5
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 abstract description 2
- 230000007547 defect Effects 0.000 abstract description 2
- 150000001875 compounds Chemical class 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000007781 pre-processing Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- H01L33/12—
-
- H01L33/0062—
-
- H01L33/06—
-
- H01L33/14—
-
- H01L33/30—
Landscapes
- Led Devices (AREA)
Abstract
The present invention relates to infrared flip LED epitaxial slice structure of a kind of GaAs base and preparation method thereof, by it is lower from it is upper successively include GaAs buffer layer, GaxIn1‑xP corrosion barrier layer, AlyGaAs ohmic contact layer, N-AlzGaAs roughened layer, AlaGaAs lower limit layer, InGaAs/AlbGaAs quantum well radiation area, AlcGaAs upper limiting layer, AldGa1‑dInP transition zone, P-GaP current extending；The problem of AlxGaAs material of p-type current expansion is changed to the current extending of AlxGa1-xInP material transition and GaP material by the present invention, reduces light absorption, improves light extraction efficiency, reduces element power loss.P-type AlGaAs limiting layer of the present invention replaces Mg doping to reduce defect using C auto-dope, improves into crystalloid amount.
Description
Technical field
The present invention relates to infrared flip LED epitaxial slice structures of a kind of GaAs base and preparation method thereof, belong to photoelectron technology
Field.
Background technique
There are many type of light-emitting component, and the light-emitting component of infrared light-emitting component and visible light is broadly divided into according to spectrum.
In general, the infrared light-emitting diode cut-in voltage of GaAs about needs 1V, and the incision of the red light emitting diodes of gallium matter is electric
Pressure about needs 1.8V；Green LED cut-in voltage about needs 2.0V or so.After the voltage of addition is more than cut-in voltage, electric current
Just rapidly rise, and ambient temperature is very big on the influence of the cut-in voltage of diode, when temperature is higher, will make its cut-in voltage number
Value increases, conversely, cut-in voltage reduces.Infrared light-emitting diode works in backward voltage, only small leakage current, but
When backward voltage is more than breakdown voltage, a large amount of electric current is soon generated, element is burnt, general infrared diode is reversed
The value of pressure resistance is about 3-6V, avoids this situation as far as possible when in use.
The heat loss of infrared light-emitting diode, be because the additional voltage of element, generation current accumulation due to come, remove
Sub-fraction energy as the transmitting of light outside, it is most of to form thermal energy and distribute, the i.e. so-called loss of the thermal energy distributed.Member
The power loss of part, in 60% or less range of maximum value, element uses above can be very safe, the loss maximum value of power and week
It encloses temperature and further relates to and be.
Chinese patent literature CN106299058A discloses a kind of epitaxial wafer for upside-down mounting infrared light-emitting diode, is serving as a contrast
Successively epitaxial layer, active layer include in period alternate InGaAs quantum well layer and GaAsP barrier layer, the periodicity for bottom the same side
InGaAs/GaAsP strain-compensated quantum well structure is used in active layer for 2~6, current-carrying can inhibit using strain-compensated quantum well
The dislocation that flows laterally to of son forms non-radiative recombination, to improve quantum efficiency.The patent mainly passes through optimization strain and mends
Quantum Well is repaid to improve internal quantum efficiency, does not improve other extension conventional structures, cannot be played and be improved light extraction efficiency, reduce element
The effect of power loss.
Summary of the invention
In view of the deficiencies of the prior art, the present invention provides a kind of infrared flip LED epitaxial slice structures of GaAs base；
The present invention also provides the preparation methods of above-mentioned LED epitaxial wafer structure；
Term is explained:
1, MOCVD is metallorganic chemical vapor deposition (Metalorganic Chemical Vapor
Deposition abbreviation).
The technical solution of the present invention is as follows:
A kind of infrared flip LED epitaxial slice structure of GaAs base, by it is lower from it is upper successively include GaAs buffer layer, GaxIn1-xP is rotten
Lose barrier layer, AlyGaAs ohmic contact layer, N-AlzGaAs roughened layer, AlaGaAs lower limit layer, InGaAs/AlbGaAs quantum
Trap luminous zone, AlcGaAs upper limiting layer, AldGa1-dInP transition zone, P-GaP current extending；X is 0.3-0.5, y 0-0.3,
Z is 0.1-0.3, a 0.3-0.5, b 0.3-0.5, c 0.3-0.5, d 0.1-0.3；The P-GaP current extending
Material is GaP；The AlaGaAs lower limit layer and the AlcDoped with C, doping concentration 4.0- in GaAs upper limiting layer
6.0E17 a atom/cm3。
The material of P-GaP current extending is GaP, reduces light absorption, improves light extraction efficiency, reduces element power loss
Problem；AlaGaAs lower limit layer and AlcDefect is reduced doped with C in GaAs upper limiting layer, is improved into crystalloid amount.
It is further preferred that x=0.5；X=0.5；Y=0.3；Z=0.2；A=0.3；B=0.4；C=0.3；D=0.2.
It is preferred according to the present invention, the GaAs buffer layer with a thickness of 200-500nm, doping concentration 1E17-5E18
A atom/cm3；The GaxIn1-xP corrosion barrier layer with a thickness of 100-500nm, doping concentration be 1E17-5E18 atom/
cm3；The AlyGaAs ohmic contact layer with a thickness of 100-300nm, doping concentration is 1E18-5E18 atom/cm3；It is described
N-AlzGaAs roughened layer with a thickness of 3000-10000nm, doping concentration is 1E17-1E18 atom/cm3；The AlaGaAs
The thickness 1000-1500nm of lower limit layer, doping concentration are 4.0-6.0E17 atom/cm3；The InGaAs/AlbGaAs amount
Sub- trap luminous zone with a thickness of 5-50nm；The AlcGaAs upper limiting layer with a thickness of 1000-3000nm, doping concentration is
1E17-1E18 atom/cm3；The AldGa1-dInP transition zone with a thickness of 200-500nm, doping concentration 5E17-1E20
A atom/cm3；The P-GaP current extending with a thickness of 2000-5000nm, doping concentration be 5E17-1E20 atom/
cm3。
It is further preferred that the GaAs buffer layer with a thickness of 300nm, doping concentration is 2-3E18 atom/cm3；
The GaxIn1-xFor P corrosion barrier layer with a thickness of 400nm, doping concentration is 1E18 atom/cm3；The AlyGaAs Ohmic contact
Layer with a thickness of 400nm, doping concentration is 1E18 atom/cm3；The N-AlzGaAs roughened layer with a thickness of 4000nm, mix
Miscellaneous concentration is 5E17-2E18 atom/cm3；The AlaGaAs lower limit layer with a thickness of 1200nm, doping concentration is
5.0E17 a atom/cm3；The InGaAs/AlbGaAs quantum well radiation area with a thickness of 25nm；It is limited on the AlcGaAs
Layer with a thickness of 1200nm, doping concentration is 4-6E17 atom/cm3；The AldGa1-dInP transition zone with a thickness of
300nm, doping concentration are 5E17-5E18 atom/cm3；The P-GaP current extending with a thickness of 3000nm, adulterate dense
Degree is 1E18-3E19 atom/cm3。
The preparation method of the above-mentioned infrared flip LED epitaxial slice structure of GaAs base, including using MOCVD method in GaAs substrate
Growing epitaxial layers, steps are as follows:
(1) keeping MOCVD device growth room temperature is 680-720 DEG C, is passed through TMGa and AsH3, give birth on gaas substrates
Long GaAs buffer layer；
(2) MOCVD device growth room temperature is risen to 730-770 DEG C, continues to be passed through TMGa, TMIn and PH3, in GaAs
Ga is grown on buffer layerxIn1-xP corrosion barrier layer；
(3) MOCVD device growth room temperature is down to 680-720 DEG C, closes TMIn and PH3, be passed through TMAl, TMGa and
AsH3, in GaxIn1-xAlyGaAs ohmic contact layer is grown on P corrosion barrier layer；
(4) keeping MOCVD device growth room temperature is 680-720 DEG C, continues to be passed through TMAl, TMGa and AsH3,
N-Al is grown on AlyGaAs ohmic contact layerzGaAs roughened layer；
(5) keeping MOCVD device growth room temperature is 680-720 DEG C, in N-AlzAl is grown on GaAs roughened layeraGaAs
Lower limit layer；
(6) keeping MOCVD device growth room temperature is 680-720 DEG C, in AlaIt is grown on GaAs lower limit layer
InGaAs/AlbGaAs quantum well radiation area；
(7) MOCVD device growth room temperature is down to 580-620 DEG C, adjustment V/III ratio is 40-60, in InGaAs/
AlbGaAs quantum well radiation grows Al in areacGaAs upper limiting layer；
(8) MOCVD device growth room temperature is down to 680-720 DEG C, closes AsH3, it is passed through TMGa, TMIn and PH3,
AldGa1-dInP transition zone is grown on AlcGaAs upper limiting layer；
(9) keeping MOCVD device growth room temperature is 730-770 DEG C, in AldGa1-dP-GaP is grown on InP transition zone
Current extending.
It is preferred according to the present invention, the GaAs buffer layer, the GaxIn1-xP corrosion barrier layer, the AlyGaAs ohm
Contact layer, the N-AlzGaAs roughened layer, the AlaThe n-type doping source of GaAs lower limit layer is Si2H6；The AlxGa1-xInP
The p-type doped source of transition zone and the P-GaP current extending is Cp2Mg。
It is preferred according to the present invention, before the step (1), executes following steps: GaAs substrate is placed on MOCVD device
In growth room, H2Under the conditions of, MOCVD device is grown into indoor temperature and rises to 730-770 DEG C, 20-40min is toasted, is passed through
AsH3, GaAs substrate surface water oxygen is removed, Surface heat-treatent is completed.
The above-mentioned pre-processing to GaAs substrate removes GaAs substrate surface water oxygen, improves into crystalloid amount.
It is preferred according to the present invention, the H2Flow be 8000-50000sccm；The purity of the TMGa is
99.9999%, the temperature of the thermostat of the TMGa is -15 DEG C of (- 5)；The purity of the TMIn is 99.9999%, described
The temperature of the thermostat of TMIn is 15-20 DEG C；The purity of the TMAl is 99.9999%, the temperature of the thermostat of the TMAl
It is 10-28 DEG C；The AsH3Purity be 99.9999%；The Si2H6Purity be 99.9999%；The Cp2The purity of Mg
It is 99.9999%, the Cp2The temperature of the thermostat of Mg is 0-25 DEG C.
The invention has the benefit that
1, the AlxGaAs material of p-type current expansion is oxidizable, and the AlxGaAs material of p-type current expansion is changed to by the present invention
AlxGa1-xInP material transition and GaP material, external quantum efficiency compound by exciton and the non-interband of isoelectronic trap progress
The problem of up to 2%-4%, reducing light absorption, improve light extraction efficiency, reducing element power loss.
2, the defects of p-type AlGaAs limiting layer of the present invention is adulterated instead of Mg using C auto-dope, reduces dislocation density, is improved
Crystal quality.
Detailed description of the invention
Fig. 1 is the schematic diagram of the infrared flip LED epitaxial slice structure of GaAs base of the present invention；
1, GaAs buffer layer, 2, GaxIn1-xP corrosion barrier layer, 3, AlyGaAs ohmic contact layer, 4, N-AlzGaAs roughening
Layer, 5, AlaGaAs lower limit layer, 6, InGaAs/AlbGaAs quantum well radiation area, 7, AlcGaAs upper limiting layer, 8, AldGa1- dInP transition zone, 9, P-GaP current extending.
Specific embodiment
The present invention is further qualified with embodiment with reference to the accompanying drawings of the specification, but not limited to this.
Embodiment 1
A kind of infrared flip LED epitaxial slice structure of GaAs base, as shown in Figure 1, by it is lower from it is upper successively include GaAs buffer layer
1、GaxIn1-xP corrosion barrier layer 2, AlyGaAs ohmic contact layer 3, N-AlzGaAs roughened layer 4, AlaGaAs lower limit layer 5,
InGaAs/AlbGaAs quantum well radiation area 6, AlcGaAs upper limiting layer 7, AldGa1-dInP transition zone 8, P-GaP current extending
9；X is 0.3-0.5, y 0-0.3, z 0.1-0.3, a 0.3-0.5, b 0.3-0.5, c 0.3-0.5, d 0.1-0.3；
The material of P-GaP current extending 9 is GaP；AlaGaAs lower limit layer 5 and AlcDoped with C, doping in GaAs upper limiting layer 7
Concentration is 4.0-6.0E17 atom/cm3。
The material of P-GaP current extending 9 is GaP, reduces light absorption, improves light extraction efficiency, reduces element power loss
The problem of；AlaGaAs lower limit layer 5 and AlcDefect is reduced doped with C in GaAs upper limiting layer 7, is improved into crystalloid amount.
GaAs buffer layer 1 with a thickness of 200-500nm, doping concentration is 1E17-5E18 atom/cm3；GaxIn1-xP is rotten
Lose barrier layer 2 with a thickness of 100-500nm, doping concentration is 1E17-5E18 atom/cm3；AlyGaAs ohmic contact layer 3
With a thickness of 100-300nm, doping concentration is 1E18-5E18 atom/cm3；N-AlzGaAs roughened layer 4 with a thickness of 3000-
10000nm, doping concentration are 1E17-1E18 atom/cm3；AlaThe thickness 1000-1500nm of GaAs lower limit layer 5 is adulterated dense
Degree is 4.0-6.0E17 atom/cm3；InGaAs/AlbGaAs quantum well radiation area 6 with a thickness of 5-50nm；AlcThe GaAs upper limit
Preparative layer 7 with a thickness of 1000-3000nm, doping concentration is 1E17-1E18 atom/cm3；AldGa1-dThe thickness of InP transition zone 8
For 200-500nm, doping concentration is 5E17-1E20 atom/cm3；P-GaP current extending 9 with a thickness of 2000-
5000nm, doping concentration are 5E17-1E20 atom/cm3。
Embodiment 2
According to a kind of infrared flip LED epitaxial slice structure of GaAs base described in embodiment 1, difference is, x=0.5；x
=0.5；Y=0.3；Z=0.2；A=0.3；B=0.4；C=0.3；D=0.2.
GaAs buffer layer 1 with a thickness of 300nm, doping concentration is 2-3E18 atom/cm3；GaxIn1-xP corrosion barrier layer
2 with a thickness of 400nm, and doping concentration is 1E18 atom/cm3；AlyGaAs ohmic contact layer 3 with a thickness of 400nm, doping concentration
For 1E18 atom/cm3；N-AlzGaAs roughened layer 4 with a thickness of 4000nm, doping concentration is 5E17-2E18 atom/cm3；
AlaGaAs lower limit layer 5 with a thickness of 1200nm, doping concentration is 5.0E17 atom/cm3；InGaAs/AlbGaAs Quantum Well
Luminous zone 6 with a thickness of 25nm；AlcGaAs upper limiting layer 7 with a thickness of 1200nm, doping concentration is 4-6E17 atom/cm3；
AldGa1-dInP transition zone 8 with a thickness of 300nm, doping concentration is 5E17-5E18 atom/cm3；P-GaP current extending 9
With a thickness of 3000nm, doping concentration is 1E18-3E19 atom/cm3。
Embodiment 3
The preparation method of the infrared flip LED epitaxial slice structure of GaAs base described in embodiment 1 or 2, including use the side MOCVD
Method grown epitaxial layer on gaas substrates, steps are as follows:
(1) keeping MOCVD device growth room temperature is 680-720 DEG C, is passed through TMGa and AsH3, give birth on gaas substrates
Long GaAs buffer layer 1；
(2) MOCVD device growth room temperature is risen to 730-770 DEG C, continues to be passed through TMGa, TMIn and PH3, in GaAs
Ga is grown on buffer layer 1xIn1-xP corrosion barrier layer 2；
(3) MOCVD device growth room temperature is down to 680-720 DEG C, closes TMIn and PH3, be passed through TMAl, TMGa and
AsH3, in GaxIn1-xAl is grown on P corrosion barrier layer 2yGaAs ohmic contact layer 3；
(4) keeping MOCVD device growth room temperature is 680-720 DEG C, continues to be passed through TMAl, TMGa and AsH3,
N-Al is grown on AlyGaAs ohmic contact layer 3zGaAs roughened layer 4；
(5) keeping MOCVD device growth room temperature is 680-720 DEG C, in N-AlzIt is grown on GaAs roughened layer 4
AlaGaAs lower limit layer 5；
(6) keeping MOCVD device growth room temperature is 680-720 DEG C, is grown on AlaGaAs lower limit layer 5
InGaAs/AlbGaAs quantum well radiation area 6；
(7) MOCVD device growth room temperature is down to 580-620 DEG C, adjustment V/III ratio is 40-60, in InGaAs/
AlbAl is grown in GaAs quantum well radiation area 6cGaAs upper limiting layer 7；
(8) MOCVD device growth room temperature is down to 680-720 DEG C, closes AsH3, it is passed through TMGa, TMIn and PH3,
AldGa1-dInP transition zone 8 is grown on AlcGaAs upper limiting layer 7；
(9) keeping MOCVD device growth room temperature is 730-770 DEG C, in AldGa1-dP- is grown on InP transition zone 8
GaP current extending 9.
Embodiment 4
According to the preparation method of the infrared flip LED epitaxial slice structure of GaAs base described in embodiment 3, difference is,
GaAs buffer layer 1, GaxIn1-xP corrosion barrier layer 2, AlyGaAs ohmic contact layer 3, N-AlzGaAs roughened layer 4,
AlaThe n-type doping source of GaAs lower limit layer 5 is Si2H6；AlxGa1-xThe p-type of InP transition zone 8 and P-GaP current extending 9 is mixed
Miscellaneous source is Cp2Mg。
Embodiment 5
According to the preparation method of the infrared flip LED epitaxial slice structure of GaAs base described in embodiment 3, difference is,
Before step (1), executes following steps: GaAs substrate being placed in MOCVD device growth room, H2Under the conditions of, it will
MOCVD device grows indoor temperature and rises to 730-770 DEG C, toasts 20-40min, is passed through AsH3, remove GaAs substrate surface water
Oxygen completes Surface heat-treatent.
The above-mentioned pre-processing to GaAs substrate removes GaAs substrate surface water oxygen, improves into crystalloid amount.
Embodiment 6
According to the preparation method of the infrared flip LED epitaxial slice structure of GaAs base described in embodiment 3, difference is, H2
Flow be 8000-50000sccm；The purity of TMGa is that the temperature of the thermostat of 99.9999%, TMGa is -15 DEG C of (- 5)；
The purity of TMIn is that the temperature of the thermostat of 99.9999%, TMIn is 15-20 DEG C；The purity of TMAl is 99.9999%, TMAl
Thermostat temperature be 10-28 DEG C；AsH3Purity be 99.9999%；Si2H6Purity be 99.9999%；Cp2Mg's is pure
Degree is 99.9999%, Cp2The temperature of the thermostat of Mg is 0-25 DEG C.
Comparative example 1
According to a kind of infrared flip LED epitaxial slice structure of GaAs base as described in example 2, difference is,
The material of P-GaP current extending 9 is AlxGaAs；
Outside the infrared flip LED of GaAs base in embodiment 3 in the infrared flip LED epitaxial slice structure of GaAs base and the comparative example
Prolong chip architecture to compare, light extraction efficiency, element power consume are as shown in table 1:
Table 1
As shown in Table 1, the material of p-type current extending 9 is changed to the low AlxGa1-xInP material mistake of resistivity by the present invention
Cross and GaP material, GaP be it is indirectly compound, carry out that non-interband is compound, and external quantum efficiency is reachable by exciton and isoelectronic trap
The problem of 2%-4% reduces light absorption, improves light extraction efficiency, reduces element power loss.
Claims (8)
1. a kind of infrared flip LED epitaxial slice structure of GaAs base, which is characterized in that by it is lower from it is upper successively include GaAs buffer layer,
GaxIn1-xP corrosion barrier layer, AlyGaAs ohmic contact layer, N-AlzGaAs roughened layer, AlaGaAs lower limit layer, InGaAs/
AlbGaAs quantum well radiation area, AlcGaAs upper limiting layer, AldGa1-dInP transition zone, P-GaP current extending；X is 0.3-
0.5, y 0-0.3, z 0.1-0.3, a 0.3-0.5, b 0.3-0.5, c 0.3-0.5, d 0.1-0.3；The P-GaP
The material of current extending is GaP；The AlaGaAs lower limit layer and the AlcDoped with C, doping in GaAs upper limiting layer
Concentration is 4.0-6.0E17 atom/cm3。
2. the infrared flip LED epitaxial slice structure of a kind of GaAs base according to claim 1, which is characterized in that x=0.5；x
=0.5；Y=0.3；Z=0.2；A=0.3；B=0.4；C=0.3；D=0.2.
3. the infrared flip LED epitaxial slice structure of a kind of GaAs base according to claim 1, which is characterized in that the GaAs
Buffer layer with a thickness of 200-500nm, doping concentration is 1E17-5E18 atom/cm3；The GaxIn1-xP corrosion barrier layer
With a thickness of 100-500nm, doping concentration is 1E17-5E18 atom/cm3；The AlyGaAs ohmic contact layer with a thickness of
100-300nm, doping concentration are 1E18-5E18 atom/cm3；The N-AlzGaAs roughened layer with a thickness of 3000-
10000nm, doping concentration are 1E17-1E18 atom/cm3；The AlaThe thickness 1000-1500nm of GaAs lower limit layer, mixes
Miscellaneous concentration is 4.0-6.0E17 atom/cm3；The InGaAs/AlbGaAs quantum well radiation area with a thickness of 5-50nm；It is described
AlcGaAs upper limiting layer with a thickness of 1000-3000nm, doping concentration is 1E17-1E18 atom/cm3；The AldGa1- dInP transition zone with a thickness of 200-500nm, doping concentration is 5E17-1E20 atom/cm3；The P-GaP current extending
With a thickness of 2000-5000nm, doping concentration is 5E17-1E20 atom/cm3。
4. the infrared flip LED epitaxial slice structure of a kind of GaAs base according to claim 1, which is characterized in that the GaAs
Buffer layer with a thickness of 300nm, doping concentration is 2-3E18 atom/cm3；The GaxIn1-xP corrosion barrier layer with a thickness of
400nm, doping concentration are 1E18 atom/cm3；The AlyGaAs ohmic contact layer with a thickness of 400nm, doping concentration is
1E18 atom/cm3；The N-AlzGaAs roughened layer with a thickness of 4000nm, doping concentration be 5E17-2E18 atom/
cm3；The AlaGaAs lower limit layer with a thickness of 1200nm, doping concentration is 5.0E17 atom/cm3；The InGaAs/
AlbGaAs quantum well radiation area with a thickness of 25nm；The AlcGaAs upper limiting layer with a thickness of 1200nm, doping concentration 4-
6E17 atom/cm3；The AldGa1-dInP transition zone with a thickness of 300nm, doping concentration be 5E17-5E18 atom/
cm3；The P-GaP current extending with a thickness of 3000nm, doping concentration is 1E18-3E19 atom/cm3。
5. a kind of preparation method of any infrared flip LED epitaxial slice structure of GaAs base of claim 1-4, feature exist
In, including MOCVD method grown epitaxial layer on gaas substrates is used, steps are as follows:
(1) keeping MOCVD device growth room temperature is 680-720 DEG C, is passed through TMGa and AsH3, grow on gaas substrates
GaAs buffer layer；
(2) MOCVD device growth room temperature is risen to 730-770 DEG C, continues to be passed through TMGa, TMIn and PH3, buffered in GaAs
Ga is grown on layerxIn1-xP corrosion barrier layer；
(3) MOCVD device growth room temperature is down to 680-720 DEG C, closes TMIn and PH3, it is passed through TMAl, TMGa and AsH3,
In GaxIn1-xAl is grown on P corrosion barrier layeryGaAs ohmic contact layer；
(4) keeping MOCVD device growth room temperature is 680-720 DEG C, continues to be passed through TMAl, TMGa and AsH3, in AlyGaAs
N-Al is grown on ohmic contact layerzGaAs roughened layer；
(5) keeping MOCVD device growth room temperature is 680-720 DEG C, in N-AlzAl is grown on GaAs roughened layeraGaAs lower limit
Preparative layer；
(6) keeping MOCVD device growth room temperature is 680-720 DEG C, in AlaInGaAs/ is grown on GaAs lower limit layer
AlbGaAs quantum well radiation area；
(7) MOCVD device growth room temperature is down to 580-620 DEG C, adjustment V/III ratio is 40-60, in InGaAs/
AlbGaAs quantum well radiation grows Al in areacGaAs upper limiting layer；
(8) MOCVD device growth room temperature is down to 680-720 DEG C, closes AsH3, it is passed through TMGa, TMIn and PH3,
AldGa1-dInP transition zone is grown on AlcGaAs upper limiting layer；
(9) keeping MOCVD device growth room temperature is 730-770 DEG C, in AldGa1-dP-GaP electric current is grown on InP transition zone
Extension layer.
6. the preparation method of the infrared flip LED epitaxial slice structure of GaAs base according to claim 5, which is characterized in that institute
State GaAs buffer layer, the GaxIn1-xP corrosion barrier layer, the AlyGaAs ohmic contact layer, the N-AlzGaAs roughened layer,
The AlaThe n-type doping source of GaAs lower limit layer is Si2H6；The AldGa1-dInP transition zone and the P-GaP current expansion
The P type doped source of layer is Cp2Mg。
7. the preparation method of the infrared flip LED epitaxial slice structure of GaAs base according to claim 6, which is characterized in that institute
Before stating step (1), executes following steps: GaAs substrate being placed in MOCVD device growth room, H2Under the conditions of, MOCVD is set
The standby indoor temperature of growth rises to 730-770 DEG C, toasts 20-40min, is passed through AsH3, GaAs substrate surface water oxygen is removed, is completed
Surface heat-treatent.
8. the preparation method of the infrared flip LED epitaxial slice structure of GaAs base according to claim 7, which is characterized in that institute
State H2Flow be 8000-50000sccm；The purity of the TMGa is 99.9999%, and the temperature of the thermostat of the TMGa is
(-5)-15℃；The purity of the TMIn is 99.9999%, and the temperature of the thermostat of the TMIn is 15-20 DEG C；The TMAl
Purity be 99.9999%, the temperature of the thermostat of the TMAl is 10-28 DEG C；The AsH3Purity be 99.9999%；
The Si2H6Purity be 99.9999%；The Cp2The purity of Mg is 99.9999%, the Cp2The temperature of the thermostat of Mg
It is 0-25 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810676839.5A CN108878601B (en) | 2018-06-27 | 2018-06-27 | A kind of infrared flip LED epitaxial slice structure of GaAs base and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810676839.5A CN108878601B (en) | 2018-06-27 | 2018-06-27 | A kind of infrared flip LED epitaxial slice structure of GaAs base and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108878601A CN108878601A (en) | 2018-11-23 |
| CN108878601B true CN108878601B (en) | 2019-10-25 |
Family
ID=64295224
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810676839.5A Active CN108878601B (en) | 2018-06-27 | 2018-06-27 | A kind of infrared flip LED epitaxial slice structure of GaAs base and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108878601B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110071210B (en) * | 2019-04-15 | 2020-10-23 | 深圳先进技术研究院 | Infrared LED device and preparation method thereof |
| CN110379898B (en) * | 2019-05-22 | 2020-11-17 | 华灿光电(苏州）有限公司 | Light emitting diode epitaxial wafer and growth method thereof |
| CN114069388B (en) * | 2020-08-07 | 2024-02-06 | 山东华光光电子股份有限公司 | Low-power AlGaInP red light semiconductor laser based on GaAsP interface transition layer and preparation method thereof |
| CN113224214B (en) * | 2021-03-24 | 2022-05-13 | 华灿光电(苏州）有限公司 | Red light emitting diode epitaxial wafer and preparation method thereof |
| CN114335276B (en) * | 2022-03-10 | 2022-05-27 | 南昌凯捷半导体科技有限公司 | 940nm reverse polarity infrared LED epitaxial wafer and preparation method thereof |
| CN115602769B (en) * | 2022-12-16 | 2023-03-24 | 南昌凯捷半导体科技有限公司 | Reverse-polarity infrared LED epitaxial wafer with light filtering structure and preparation method thereof |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101114782B1 (en) * | 2009-12-10 | 2012-02-27 | 엘지이노텍 주식회사 | Light emitting device, light emitting device package and method for fabricating the same |
| CN102208508B (en) * | 2010-03-30 | 2014-05-07 | 厦门乾照光电股份有限公司 | Light emitting diode structure and manufacturing method thereof |
| CN103022892B (en) * | 2012-12-14 | 2015-03-25 | 武汉电信器件有限公司 | Structure and manufacture method of high power laser chip with wavelength of 808nm |
| CN103715324B (en) * | 2014-01-02 | 2017-02-22 | 厦门乾照光电股份有限公司 | Light-emitting diode and manufacturing method thereof |
| CN108091742B (en) * | 2016-11-22 | 2024-02-06 | 山东华光光电子股份有限公司 | GaAs-based yellow-green light LED with improved window layer structure and manufacturing method thereof |
| CN107316931B (en) * | 2017-07-06 | 2019-05-07 | 山东浪潮华光光电子股份有限公司 | A kind of the flip LED epitaxial wafer and its manufacturing method of GaAs base roughened layer structure |
-
2018
- 2018-06-27 CN CN201810676839.5A patent/CN108878601B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN108878601A (en) | 2018-11-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108878601B (en) | A kind of infrared flip LED epitaxial slice structure of GaAs base and preparation method thereof | |
| CN104393124B (en) | A kind of preparation method of LED epitaxial slice structure | |
| TWI500072B (en) | Manufacturing method for light emitting element | |
| US5693963A (en) | Compound semiconductor device with nitride | |
| US7547910B2 (en) | Semiconductor light-emitting device and method of manufacturing semiconductor light-emitting device | |
| CN104409587B (en) | A kind of InGaN base blue-green light LED epitaxial structure and growing method | |
| CN105206726A (en) | LED structure and growth method thereof | |
| US20130260541A1 (en) | METHOD FOR PRODUCING Ga-CONTAINING GROUP III NITRIDE SEMICONDUCTOR | |
| WO2017202328A1 (en) | Gallium nitride-based light emitting diode and preparation method therefor | |
| CN114256395B (en) | LED epitaxial wafer, epitaxial growth method and LED chip | |
| CN104733579A (en) | Semiconductor light-emitting device and manufacturing method thereof | |
| CN109216514A (en) | A kind of gallium nitride based LED epitaxial slice and preparation method thereof | |
| CN113964217A (en) | A kind of InGaN/GaN multiple quantum well blue laser cell epitaxial wafer and preparation method thereof | |
| CN104319317B (en) | Epitaxial production method capable of effectively improving P-GaN hole injection layer quality | |
| CN109524520A (en) | A kind of high performance green diode multi-quantum pit structure and preparation method thereof | |
| CN115498083A (en) | Light emitting diode epitaxial structure and light emitting diode | |
| CN209104183U (en) | A kind of high performance green diode multi-quantum pit structure | |
| CN109473516A (en) | A kind of gallium nitride based LED epitaxial slice and its growing method | |
| CN108808446A (en) | A kind of the GaN base laser epitaxial structure and its growing method of the structure that fractures with dislocation | |
| KR101201641B1 (en) | Transparent thin film, light emitting device comprising the same, and methods for preparing the same | |
| CN105140360B (en) | A kind of iii-nitride light emitting devices and preparation method thereof | |
| JP2006339427A (en) | Method for producing epitaxial wafer for nitride semiconductor light-emitting diode, epitaxial wafer for the nitride semiconductor light-emitting diode, and the nitride semiconductor light-emitting diode | |
| CN206322727U (en) | A kind of GaAs bases improve the green-yellow light LED of window layer structure | |
| CN214378484U (en) | GaN-based epitaxial wafer structure | |
| CN105489725B (en) | A kind of LED chip structure and production method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200922 Address after: Tianchen Avenue high tech Zone of Ji'nan City, Shandong Province, No. 1835 250101 Patentee after: SHANDONG HUAGUANG OPTOELECTRONICS Co.,Ltd. Address before: 261061 No. 9, Golden Road, hi tech Zone, Shandong, Weifang Patentee before: SHANDONG INSPUR HUAGUANG OPTOELECTRONICS Co.,Ltd. |
|
| TR01 | Transfer of patent right |