CN115602769B - Reverse-polarity infrared LED epitaxial wafer with light filtering structure and preparation method thereof - Google Patents

Reverse-polarity infrared LED epitaxial wafer with light filtering structure and preparation method thereof Download PDF

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CN115602769B
CN115602769B CN202211616048.6A CN202211616048A CN115602769B CN 115602769 B CN115602769 B CN 115602769B CN 202211616048 A CN202211616048 A CN 202211616048A CN 115602769 B CN115602769 B CN 115602769B
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gaas
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doping concentration
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CN115602769A (en
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王苏杰
杨祺
董耀尽
潘彬
王向武
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Nanchang Kaijie Semiconductor Technology Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier

Abstract

The invention relates to the technical field of LEDs (light emitting diode), in particular to a reverse polarity infrared LED epitaxial wafer with a filtering structure and a preparation method thereof. According to the invention, the DBR reflecting layer and the filter layer structure are introduced between the current expanding layer and the limiting layer on the two sides of the conventional 940nm reverse polarity infrared LED, so that the overflow of visible light is effectively avoided, the luminous efficiency of the LED device is improved, and the LED device can be applied to the fields of security monitoring cameras without red exposure and the like.

Description

Reverse-polarity infrared LED epitaxial wafer with light filtering structure and preparation method thereof
Technical Field
The invention relates to the technical field of LEDs, in particular to a 940nm reverse polarity infrared LED epitaxial wafer with a light filtering structure and a preparation method thereof.
Background
A Light Emitting Diode (LED) is a light Emitting device that converts electrical energy into light energy, has the characteristics of small size, long service life, high brightness, low power consumption, and the like, and is often used in remote controllers, security cameras, optical switches, infrared remote sensing, medical appliances, infrared Lighting, and other scenes. The security monitoring equipment generally needs to be concealed to a certain extent, and the existing conventional structure is influenced by the band gap of the material, so that red light with wavelength in visible light can be emitted, and the concealment of the security camera is not facilitated at night.
At present, most of domestic security monitoring cameras use reverse-polarity infrared LEDs with the light-emitting wavelength of 940nm, and have the advantages of high light-emitting power, high reliability and the like. In the prior art, a schematic structural diagram of a conventional reverse polarity infrared LED epitaxial wafer is shown in fig. 1, and includes, from bottom to top, an N-type GaAs substrate 1,N GaAs buffer layer 2, an etch stop layer 3, an N-type ohmic contact layer 4,N electrode protection layer 5,N current spreading layer 6,N type confinement layer 7,N surface waveguide layer 8, a multiple quantum well active layer 9,P surface waveguide layer 10, a p-type confinement layer 11, a p-type current spreading layer 12, and a p-type window layer 13. However, the following disadvantages still exist with the use of such LEDs: in a conventional structure, a quantum barrier and a waveguide layer of a multi-quantum well active layer are generally made of thin AlGaAs materials with low Al components, electron-hole pairs are easy to radiate and recombine at the positions to emit red light, and the infrared LED has no concealment and confidentiality relative to an infrared LED applied to a security monitoring camera. In addition, from the energy point of view, in the process of converting the same injected electric energy into light energy, a part of photon energy is emitted in the form of visible light, and infrared light is not formed, which also results in low efficiency of the device.
Therefore, the 940nm reverse-polarity infrared LED with high efficiency and no visible light overflow is developed, and has important significance for security cameras with high concealment.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a 940nm reverse polarity infrared LED epitaxial wafer with a light filtering structure and a preparation method thereof, wherein a light filtering layer and a DBR (distributed Bragg reflector) reflecting layer are introduced between current expanding layers and limiting layers on two sides of a conventional 940nm reverse polarity infrared LED, so that the light overflow of a visible light waveband is effectively avoided, the luminous efficiency of an LED device is improved, and the prepared luminous device can be applied to the fields of infrared remote control, security monitoring cameras and the like.
The first purpose of the invention is to provide a reverse-polarity infrared LED epitaxial wafer with a filtering structure, wherein the LED epitaxial wafer grows an epitaxial layer from a N-type GaAs substrate, and sequentially grows a N-type GaAs buffer layer, a corrosion stop layer, an N-type ohmic contact layer, an N-type electrode protection layer, an N-type current expansion layer, an N-surface filter layer, an N-type DBR reflection layer, an N-type limiting layer, an N-surface wave guide layer, a multi-quantum well active layer, a P-surface wave guide layer, a P-type limiting layer, a P-type DBR reflection layer, a P-surface filter layer, a P-type current expansion layer and a P-type window layer from bottom to top;
compared with a conventional 940nm reverse-polarity infrared LED epitaxial structure, an N-surface filter layer and an N-type DBR (distributed Bragg reflector) reflection layer are sequentially inserted between the N-type current expansion layer and the N-type limiting layer, and a P-type DBR reflection layer and a P-surface filter layer are sequentially inserted between the P-type limiting layer and the P-type current expansion layer;
the N-type DBR reflecting layer and the P-type DBR reflecting layer are both made of AlAs/GaAs alternately-grown periodic structures, the number of cycle pairs is 10-15 pairs, the thickness of AlAs is 50-60nm and the thickness of GaAs is 45-50 nm in each cycle period;
the N-side filter layer and the P-side filter layer are both made of GaAs, wherein the thickness of the N-side GaAs filter layer is 2500nm-3500nm, and the thickness of the P-side GaAs filter layer is 1500nm-2000nm.
In the technical scheme, the DBR structures are introduced into the two sides of the P surface and the N surface close to the light emitting areas, visible light generated by the multiple quantum well active layer can be reflected back to the inside of the active areas, the purpose of no visible light overflow is achieved, and the concealment and confidentiality of 940nm reverse polarity infrared LED products serving as security monitoring are guaranteed. Meanwhile, after visible light is reflected to the active layer by the DBR structures on the two sides, according to the photoluminescence principle, the active region absorbs photon energy with the short wavelength, electron-hole radiation recombination of an infrared band in the quantum well can be excited again, more infrared light is formed, and the light emitting efficiency of the device is effectively improved. Besides, after the GaAs filter layer has been introduced in the outside of DBR structure, the DBR structure is incomplete to the filtration of visible light when can preventing heavy current work, prevents that remaining visible light from revealing, and the GaAs material through narrow band gap can be filtered the visible light absorption that this part revealed out, has further avoided the visible light to spill over, has promoted the reliability and the stability of device work.
Furthermore, in the N-type DBR reflecting layer, the doping materials of AlAs and GaAs are Si-doped, and the doping concentrations are 1 multiplied by 10 18 cm -3 -2×10 18 cm -3 。
Furthermore, in the reflecting layer of the P-type DBR, the doping materials of AlAs and GaAs are both C-doped, and the doping concentration is 1.5 multiplied by 10 18 cm -3 -2.5×10 18 cm -3 。
Furthermore, the doping material of GaAs in the N-side filter layer is Si-doped, and the doping concentration is 1 multiplied by 10 18 cm -3 -2×10 18 cm -3 。
Furthermore, the doping material of GaAs in the P-side filter layer is C-doped, and the doping concentration is 1 multiplied by 10 18 cm -3 -2×10 18 cm -3 。
Furthermore, the materials of the N-type current spreading layer and the P-type current spreading layer are both Al x1 Ga 1-x1 As, wherein the value range of x1 is 0.1-0.2; the N-type limiting layer and the P-type limiting layer are both made of Al x2 Ga 1-x2 As, wherein x2 is in the range of 0.2-0.4.
Furthermore, the N-plane waveguide layer and the P-plane waveguide layer are both made of Al x3 Ga 1-x3 As, wherein x3 is 0.05-0.15, the P-type window layer is made of GaP with a thickness of 200-400 nm and a doping concentration of 5 × 10 19 cm -3 -9×10 19 cm -3 。
Furthermore, the multiple quantum well active layer is of a periodic asymmetric quantum well structure with strain compensation, the period number is 4-8 pairs, the light emitting area is undoped, and the material of the quantum well layer is In x4 Ga 1-x4 As, the thickness of the single-layer trap is 5nm-8nm, and the value range of x4 is 0.16-0.18; the quantum barrier layer is made of (Al) y1 Ga 1-y1 ) 0.5 As 0.5 The thickness of P is 20nm-30nm, and the value range of y1 is 0.16-0.30.
The second objective of the present invention is to provide a method for preparing an infrared LED epitaxial wafer with reversed polarity and a filtering structure, wherein an N-type GaAs buffer layer, a corrosion stop layer, an N-type ohmic contact layer, an N-type electrode protection layer, an N-type current spreading layer, an N-plane filter layer, an N-type DBR reflecting layer, an N-type confining layer, an N-plane wave guide layer, a multiple quantum well active layer, a P-plane wave guide layer, a P-type confining layer, a P-type DBR reflecting layer, a P-plane filter layer, a P-type current spreading layer, and a P-type window layer are sequentially grown on an N-type GaAs substrate using MOCVD (metal organic chemical vapor deposition), and the epitaxial wafer is taken out after the growth is completed.
Further, the growth steps of the N-type DBR reflecting layer are as follows: setting the temperature of the reaction chamber to 720 +/-20 ℃, and introducing TMAl and AsH on the N-type current expansion layer 3 Growing AlAs material at a growth rate of 1-1.5 nm/s and using SiH 4 As a dopant, the doping concentration is 1 × 10 18 cm -3 -2×10 18 cm -3 (ii) a Then, TMAl is closed, TMGa is introduced, a GaAs material is grown, the growth rate is 1.5nm/s-2nm/s, and SiH is used as a dopant 4 Doping concentration of 1X 10 18 cm -3 -2×10 18 cm -3 Wherein AlAs and GaAs growth combine to form a first pair of N-type DBR reflective layers followed by 9-14 pairs of recycling growth.
Further, the growth steps of the P-type DBR reflecting layer are as follows: setting the temperature of the reaction chamber to 690 +/-20 ℃, and introducing TMAl and AsH onto the P-type limiting layer 3 Growing AlAs material at a growth rate of 1-1.5 nm/s by using CCl 4 As a dopant, the doping concentration is 1.5X 10 18 cm -3 -2.5×10 18 cm -3 (ii) a Then, TMAl is closed, TMGa is introduced, gaAs material is grown, the growth rate is 1.5nm/s-2nm/s, the dopant is CCl 4 Doping concentration of 1.5X 10 18 cm -3 -2.5×10 18 cm -3 Wherein the AlAs and GaAs growth combine to form a first pair of P-type DBR reflective layers followed by 9-14 pairs of recycling growth.
Further, the growth step of the N-side filter layer is as follows: setting the temperature of the reaction chamber to 690 +/-20 ℃, introducing TMGa and AsH, growing a GaAs material with the thickness of 2500nm-3500nm on the N-type current expansion layer by adopting SiH 4 As an N-type dopant, the doping concentration is 1X 10 18 cm -3 -2×10 18 cm -3 (ii) a The growth steps of the P-side filter layer are as follows: setting the temperature of the reaction chamber to 690 +/-20 ℃, introducing TMGa and AsH, growing the GaAs material with the thickness of 1500-2000 nm by adopting CCl 4 As a P-type dopant, doped to a high concentrationDegree of 1X 10 18 cm -3 -2×10 18 cm -3 。
Compared with the prior art, the invention has the following beneficial effects:
1. according to the invention, the N-face filter layer and the N-type DBR reflecting layer are sequentially introduced between the N-type current expanding layer and the N-type limiting layer, and the P-type DBR reflecting layer and the P-face filter layer are sequentially introduced between the P-type limiting layer and the P-type current expanding layer. The structure can reflect the visible light generated in the active area back, avoids the light overflow of the visible light wave band under the working state, achieves the effect of no red light exposure, and ensures the concealment and confidentiality of the 940nm reversed polarity infrared LED used for security monitoring.
2. The DBR reflecting layer structures on the two sides of P, N reflect visible light back to the active region, and then can excite the radiation recombination of infrared light in the multiple quantum wells again to generate photoluminescence, so that more infrared light is formed, and the luminous efficiency of the LED device is effectively improved.
3. The GaAs filter layer introduced by the invention can prevent the DBR structure from incompletely filtering visible light when a large current works, and the leaked visible light is absorbed and filtered by the GaAs material with a narrow band gap, so that the visible light is further prevented from overflowing, and the reliability and the stability of the 940nm reverse-polarity infrared LED device under various working conditions are improved.
Drawings
FIG. 1 is a schematic structural diagram of a conventional 940nm reverse polarity infrared LED epitaxial wafer;
fig. 2 is a schematic structural diagram of a 940nm reverse polarity infrared LED epitaxial wafer with a light filtering structure according to the present invention.
Number designations in the schematic drawings illustrate that:
1.N GaAs substrate; 5363 a buffer layer of GaAs type 2.N; 3. etching the cut-off layer; 4.N type ohmic contact layer; 5.N type electrode protection layer; 5363 a current spreading layer of model 6.N; 7.N type confinement layer; 8.N face waveguide layer; 9. a multiple quantum well active layer; 10. A p-plane waveguide layer; a P-type confinement layer; 12. A p-type current spreading layer; 13. A p-type window layer; 14.N type DBR reflective layer; 15.p-type DBR reflective layer; a 16.N-sided filter layer; and 17. P-side filter layer.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the application, its application, or uses. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it should be understood that the terms "first", "second", etc. are used to define the components, and are used only for the convenience of distinguishing the corresponding components, and if not otherwise stated, the terms have no special meaning, and thus, should not be construed as limiting the scope of the present application.
In the description of the present application, it is to be understood that the orientation or positional relationship indicated by the directional terms such as "front, rear, upper, lower, left, right", "lateral, vertical, horizontal" and "top, bottom", etc., are generally based on the orientation or positional relationship shown in the drawings, and are used for convenience of description and simplicity of description only, and in the case of not making a reverse description, these directional terms do not indicate and imply that the device or element being referred to must have a particular orientation or be constructed and operated in a particular orientation, and therefore, should not be considered as limiting the scope of the present application; the terms "inner and outer" refer to the inner and outer relative to the profile of the respective component itself.
Referring to fig. 1 and 2, it should be noted that the drawings provided in the present embodiment are only schematic illustrations of the basic idea of the present invention, and only the components related to the present invention are shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, the form, number and proportion of the components in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
In some embodiments of the present invention, a 940nm reverse-polarity infrared LED epitaxial wafer with a filtering structure is provided, and a schematic structural diagram of the infrared LED epitaxial wafer is shown in fig. 2, where the LED epitaxial wafer grows an epitaxial layer from an N-type GaAs substrate 1, and sequentially grows an N-type GaAs buffer layer 2, an etch stop layer 3, an N-type ohmic contact layer 4, an N-type electrode protection layer 5, an N-type current spreading layer 6, an N-side filter layer 16, an N-type DBR reflection layer 14, an N-type confinement layer 7, an N-side waveguide layer 8, a multiple quantum well active layer 9, a P-side waveguide layer 10, a P-type confinement layer 11, a P-type reflection layer 15, a P-side filter layer 17, a P-type current spreading layer 12, and a P-type window layer 13 from bottom to top.
In some embodiments, the material of the corrosion stop layer and the material of the N-type electrode protection layer are both Ga 0.5 In 0.5 P with a thickness of 80-100 nm and a doping concentration of 2 × 10 18 cm -3 -3×10 18 cm -3 (ii) a The N-type ohmic contact layer is made of GaAs with a thickness of 30-60 nm and a doping concentration of 2 × 10 18 cm -3 -5×10 18 cm -3 。
In some embodiments, the N-type and P-type current spreading layers are both Al x1 Ga 1-x1 As, x1 is in the range of 0.1-0.2. Wherein the thickness of the N-type current spreading layer is 6500nm-7500nm, and the doping concentration is 1 × 10 18 cm -3 -2×10 18 cm -3 (ii) a The thickness of the P-type current expansion layer is 2000nm-3000nm, and the doping concentration is 1 × 10 18 cm -3 -2×10 18 cm -3 。
In some embodiments, the N-side filter layer and the P-side filter layer are both GaAs. Wherein the thickness of the N-face filter layer is 2500nm-3500nm, and the doping concentration is 1 × 10 18 cm -3 -2×10 18 cm -3 (ii) a The P-side filter layer has a thickness of 1500nm-2000nm and a doping concentration of 1 × 10 18 cm -3 -2×10 18 cm -3 。
In some embodiments, the N-type DBR reflecting layer and the P-type DBR reflecting layer are both made of AlAs/GaAs alternately-grown periodic structures, the number of cycle pairs is 10-15 pairs, the thickness of the AlAs is 50-60nm in each cycle period, and the thickness of the GaAs is 45-50 nm.
Wherein, the doping concentration of AlAs and GaAs of the N-type DBR reflecting layer is 1 × 10 18 cm -3 -2×10 18 cm -3 (ii) a The doping concentrations of AlAs and GaAs of the P-type DBR reflecting layer are both 1.5 multiplied by 10 18 cm -3 -2.5×10 18 cm -3 。
In some embodiments, the N-type confinement layer and the P-type confinement layer are both Al x2 Ga 1-x2 As, wherein x2 is in the range of 0.2-0.4, the thickness of both is 400-500 nm, and the doping concentration is 1.5 × 10 18 cm -3 -2.5×10 18 cm -3 。
In some embodiments, the N-plane waveguide layer and the P-plane waveguide layer are both made of Al x3 Ga 1-x3 As, wherein the value range of x3 is 0.05-0.15, the thickness of both is 5000-8000 nm, and both are undoped.
In some embodiments, the multiple quantum well active layer is a periodic asymmetric quantum well structure with strain compensation, the period number is 4 to 8 pairs, and the light emitting region is undoped. Wherein the material of the quantum well layer is In x4 Ga 1-x4 As, the thickness of the single-layer trap is 5nm-8nm, and the value range of x4 is 0.16-0.18; the quantum barrier layer is made of (Al) y1 Ga 1-y1 ) 0.5 As 0.5 The thickness of P is 20-30nm, and the value range of y1 is 0.16-0.30.
In some embodiments, the P-type window layer material is GaP with a thickness of 200nm-400nm and a doping concentration of 5 × 10 19 cm -3 -9×10 19 cm -3 。
In some embodiments, the doping material of each N-type epitaxial layer is Si; the doping materials of the P-type limiting layer, the P-type DBR reflecting layer, the P-side filter layer and the P-type current expanding layer are all C; the P-type window layer is doped with Mg.
Another embodiment of the present invention provides a method for preparing an infrared LED epitaxial wafer with reversed polarity and a filtering structure, which specifically includes the following steps:
(1) The MOCVD reaction chamber is placed in pure H 2 The atmosphere is pumped to 50mbar, the temperature of the reaction chamber is raised to 400 ℃, then the N-type GaAs substrate is transferred into the reaction chamber through a mechanical arm transfer bin, then the temperature is rapidly raised to 750 ℃,maintaining at 750 deg.C for 10min-15min;
(2) Growing an N-type GaAs buffer layer: setting the temperature of the reaction chamber at 700 +/-20 ℃, and introducing TMGa and AsH 3 Growing 200-800 nm GaAs buffer layer material with SiH 4 As an N-type dopant, the doping concentration is 2X 10 18 cm -3 -3×10 18 cm -3 ；
(3) Growing a corrosion stop layer: setting the temperature of the reaction chamber at 690 +/-20 ℃, and introducing TMGa, TMIn and PH 3 Growing GaInP material with thickness of 80-100 nm, using SiH 4 As an N-type dopant, the doping concentration is 2X 10 18 cm -3 -3×10 18 cm -3 ；
(4) Growing an N-type ohmic contact layer: setting the temperature of the reaction chamber to 690 +/-20 ℃, and introducing TMGa and AsH 3 Growing GaAs material with thickness of 30nm-60nm by SiH 4 As an N-type dopant, the doping concentration is 2X 10 18 cm -3 -5×10 18 cm -3 ；
(5) Growing an N-type electrode protection layer: setting the temperature of the reaction chamber at 690 +/-20 ℃, and introducing TMGa, TMIn and PH 3 Growing GaInP material with thickness of 80-100 nm, using SiH 4 As an N-type dopant, the doping concentration is 2X 10 18 cm -3 -3×10 18 cm -3 ；
(6) Growing an N-type current expansion layer: setting the temperature of the reaction chamber to 690 +/-20 ℃, and introducing TMGa, TMAl and AsH 3 Growing Al with the thickness of 6500nm-7500nm x1 Ga 1-x1 As material, wherein x1 is 0.1-0.2, siH is adopted 4 As an N-type dopant, the doping concentration is 1X 10 18 cm -3 -2×10 18 cm -3 ；
(7) Growing an N-face filter layer: setting the temperature of the reaction chamber to 690 +/-20 ℃, introducing TMGa and AsH, growing a GaAs material with the thickness of 2500nm-3500nm on the N-type current expansion layer by adopting SiH 4 As an N-type dopant, the doping concentration is 1X 10 18 cm -3 -2×10 18 cm -3 ；
(8) Growing an N-type DBR reflecting layer: setting the temperature of the reaction chamber to 720 +/-20 ℃, and introducing TMAl and AsH 3 Growing AlAs material with thickness of 50nm-60nm, then cutting off TMAl, simultaneously introducing TMGa, and growing GaAs material with thickness of 45nm-50nm. The above AlAs/GaAs is the first cycle, and the combination of 10-15 pairs needs to be repeatedly grown. SiH is adopted as the material of the N-type DBR reflecting layer 4 The doping concentrations of the N-type dopants were all 1X 10 18 cm -3 -2×10 18 cm -3 ；
(9) Growing an N-type limiting layer: setting the temperature of the reaction chamber to 690 +/-20 ℃, and introducing TMGa, TMAl and AsH 3 Growing Al with a thickness of 400nm-500nm x2 Ga 1-x2 As material, wherein x2 is 0.2-0.4, siH is used 4 As the N-type dopant, the doping concentration was 1.5X 10 18 cm -3 -2.5×10 18 cm -3 ；
(10) Growing an N-face waveguide layer: setting the temperature of the reaction chamber to 690 +/-20 ℃, and introducing TMGa, TMAl and AsH 3 Growing Al with a thickness of 5000nm-8000nm x3 Ga 1-x3 An As material, wherein the value range of x3 is 0.05-0.15, and the layer is undoped;
(11) Growing a multi-quantum well active layer: setting the temperature of the reaction chamber at 670 +/-20 ℃, and introducing TMGa, TMAl, TMIn and AsH 3 、PH 3 The growth well and barrier are In respectively x4 Ga 1-x4 As、(Al y1 Ga 1-y1 ) 0.5 As 0.5 P, the thickness of a single-layer well is 5nm-8nm, wherein the value range of x4 is 0.16-0.18, the thickness of a single-layer barrier is 20nm-30nm, the value range of y1 is 0.16-0.30, the periodicity is 4-8 pairs, and a light-emitting region is undoped;
(12) Growing a P-face waveguide layer: setting the temperature of the reaction chamber to 690 +/-20 ℃, and introducing TMGa, TMAl and AsH 3 Growing Al with a thickness of 5000-8000 nm x3 Ga 1-x3 An As material, wherein the value range of x3 is 0.05-0.15, and the layer is undoped;
(13) Growing a P-type limiting layer: setting the temperature of the reaction chamber to 690 +/-20 ℃, and introducing TMGa, TMAl,AsH 3 Growing Al with a thickness of 400nm-500nm x2 Ga 1-x2 As material, wherein x2 is in the range of 0.2-0.4, using CCl 4 As a P-type dopant, the doping concentration was 1.5X 10 18 cm -3 -2.5×10 18 cm -3 ；
(14) Growing a P-type DBR reflecting layer: setting the temperature of the reaction chamber at 680 +/-20 ℃, and introducing TMAl and AsH 3 Growing AlAs material with thickness of 50nm-60nm, then cutting off TMAl, simultaneously introducing TMGa, and growing GaAs material with thickness of 45nm-50nm. The AlAs/GaAs is the first period, the combination of 10 pairs to 15 pairs is repeatedly grown, and the materials of the P-type DBR reflecting layers all adopt CCl 4 The doping concentrations of the P-type dopants were all 1.5X 10 18 cm -3 -2.5×10 18 cm -3 ；
(15) Growing a P-side filter layer: setting the temperature of the reaction chamber to 690 +/-20 ℃, introducing TMGa and AsH, growing the GaAs material with the thickness of 1500-2000 nm by adopting CCl 4 As a P-type dopant, the doping concentration is 1X 10 18 cm -3 -2×10 18 cm -3 ；
(16) Growing a P-type current expansion layer: setting the temperature of the reaction chamber to 690 +/-20 ℃, and introducing TMGa, TMAl and AsH 3 Growing Al with a thickness of 2000nm-3000nm x1 Ga 1-x1 As material, wherein x1 is 0.1-0.2, CCl is adopted 4 As a P-type dopant, the doping concentration is 1X 10 18 cm -3 -2×10 18 cm -3 ；
(17) Growing a P-type window layer: setting the temperature of the reaction chamber at 650 +/-20 ℃, and introducing TMGa and PH 3 Growing GaP material with thickness of 200nm-400nm, and using CP 2 Mg as P-type dopant with a doping concentration of 5X 10 19 cm -3 -9×10 19 cm -3 ；
(18) Taking the slices: and after the growth is finished, reducing the temperature of the MOCVD reaction chamber to 110 ℃, then adjusting the pressure to 1000mbar, opening the reaction chamber, and taking out the epitaxial wafer.
In summary, the DBR structures are introduced to the two sides of the P surface and the N surface of the light emitting area, and the visible light generated by the active area is reflected back to the inside of the active area, so that the purpose of no visible light overflow is achieved, and the concealment and the safety of the 940nm reverse polarity infrared LED product serving as the security camera are ensured. Meanwhile, after visible light is reflected to the active region by the DBR structures on the two sides, radiation recombination of infrared bands in the quantum well can be excited again, more infrared light is formed, and the light emitting efficiency of the device is effectively improved. In addition, the GaAs filter layer has been introduced outward in both sides DBR structure and can be prevented that the filtration of DBR structure to visible light is not thorough under the heavy current work, and the GaAs material through narrow band gap can be filtered the visible light absorption that this part revealed out, has further avoided the visible light to spill over, has promoted the reliability and the stability of device work.
Finally, it should be emphasized that the above-described preferred embodiments of the present invention are merely examples of implementations, rather than limitations, and that many variations and modifications of the invention are possible to those skilled in the art, without departing from the spirit and scope of the invention.

Claims (10)

1. The reverse-polarity infrared LED epitaxial wafer with the light filtering structure is characterized in that an epitaxial layer grows from an N-type GaAs substrate, and an N-type GaAs buffer layer, a corrosion stop layer, an N-type ohmic contact layer, an N-type electrode protection layer, an N-type current expansion layer, an N-type limiting layer, an N-type waveguide layer, a multi-quantum well active layer, a P-type waveguide layer, a P-type limiting layer, a P-type current expansion layer and a P-type window layer sequentially grow from bottom to top;
an N-face filter layer and an N-type DBR reflecting layer are sequentially inserted between the N-type current expanding layer and the N-type limiting layer, and a P-type DBR reflecting layer and a P-face filter layer are sequentially inserted between the P-type limiting layer and the P-type current expanding layer;
the N-type DBR reflecting layer and the P-type DBR reflecting layer are both made of AlAs/GaAs alternately-grown periodic structures, the number of cycle pairs is 10-15 pairs, the thickness of AlAs is 50-60nm and the thickness of GaAs is 45-50 nm in each cycle period;
the N-side GaAs filter layer and the P-side GaAs filter layer are made of GaAs, wherein the thickness of the N-side GaAs filter layer is 2500nm-3500nm, and the thickness of the P-side GaAs filter layer is 1500nm-2000nm.
2. The reverse-polarity infrared LED epitaxial wafer with the filtering structure as claimed in claim 1, wherein in the N-type DBR reflective layer, the doping materials of AlAs and GaAs are both Si doped, and the doping concentrations are both 1 x 10 18 cm -3 -2×10 18 cm -3 (ii) a In the reflecting layer of the P-type DBR, the doping materials of AlAs and GaAs are both C-doped, and the doping concentration is 1.5 multiplied by 10 18 cm -3 -2.5×10 18 cm -3 。
3. The reverse-polarity infrared LED epitaxial wafer with the filtering structure as claimed in claim 1, wherein the doping material of GaAs in the N-side filtering layer is Si-doped with a doping concentration of 1 x 10 18 cm -3 -2×10 18 cm -3 (ii) a The doping material of GaAs in the P-side filter layer is C-doped with the doping concentration of 1 × 10 18 cm -3 -2×10 18 cm -3 。
4. The reverse-polarity infrared LED epitaxial wafer with the light filtering structure as claimed in claim 1, wherein the materials of the N-type current spreading layer and the P-type current spreading layer are both Al x1 Ga 1-x1 As, wherein the value range of x1 is 0.1-0.2; the N-type limiting layer and the P-type limiting layer are both made of Al x2 Ga 1-x2 As, wherein x2 is in the range of 0.2-0.4.
5. The reverse-polarity infrared LED epitaxial wafer with the filtering structure as claimed in claim 1, wherein the N-plane waveguide layer and the P-plane waveguide layer are both made of Al x3 Ga 1-x3 As, wherein x3 ranges from 0.05 to 0.15; the P-type window layer is made of GaP with a thickness of 200-400 nm and a doping concentration of 5 × 10 19 cm -3 -9×10 19 cm -3 。
6. The reverse-polarity infrared LED epitaxial wafer with the filtering structure as claimed In claim 1, wherein the multiple quantum well active layer is a periodic asymmetric quantum well structure with strain compensation, the period number is 4-8 pairs, the light emitting region is undoped, and the material of the quantum well layer is In x4 Ga 1-x4 As, the thickness of the single-layer trap is 5nm-8nm, and the value range of x4 is 0.16-0.18; the quantum barrier layer is made of (Al) y1 Ga 1-y1 ) 0.5 As 0.5 The thickness of P is 20nm-30nm, and the value range of y1 is 0.16-0.30.
7. The method for preparing an infrared LED epitaxial wafer with reverse polarity of the filter structure as claimed in any one of claims 1 to 6, wherein an N-type GaAs buffer layer, an etch stop layer, an N-type ohmic contact layer, an N-type electrode protection layer, an N-type current spreading layer, an N-type filter layer, an N-type DBR reflection layer, an N-type confinement layer, an N-type waveguide layer, a multiple quantum well active layer, a P-type waveguide layer, a P-type confinement layer, a P-type DBR reflection layer, a P-type filter layer, a P-type current spreading layer, and a P-type window layer are sequentially grown on an N-type GaAs substrate by using MOCVD equipment, and the epitaxial wafer is taken out after the growth is finished.
8. The method as claimed in claim 7, wherein the step of growing the N-type DBR reflective layer is: setting the temperature of the reaction chamber to 720 +/-20 ℃, and introducing TMAl and AsH on the N-type current expansion layer 3 Growing AlAs material at a growth rate of 1-1.5 nm/s and using SiH 4 As a dopant, the doping concentration is 1 × 10 18 cm -3 -2×10 18 cm -3 (ii) a Then, TMAl is closed, TMGa is introduced, a GaAs material is grown, the growth rate is 1.5nm/s-2nm/s, and SiH is used as a dopant 4 Doping concentration of 1X 10 18 cm -3 -2×10 18 cm -3 Where AlAs and GaAs growth combine to form a first pair of N-type DBR reflective layers, followed by 9-14 pairs of recycling growth.
9. The method as claimed in claim 7, wherein the step of growing the P-type DBR reflective layer is: setting the temperature of the reaction chamber to 690 +/-20 ℃, and introducing TMAl and AsH on the P-type limiting layer 3 Growing AlAs material at a growth rate of 1-1.5 nm/s by using CCl 4 As a dopant, the doping concentration is 1.5X 10 18 cm -3 -2.5×10 18 cm -3 (ii) a Then, TMAl is closed, TMGa is introduced, gaAs material is grown, the growth rate is 1.5nm/s-2nm/s, and the dopant is CCl 4 Doping concentration of 1.5X 10 18 cm -3 -2.5×10 18 cm -3 Where AlAs and GaAs growth combine to form a first pair of P-type DBR reflective layers, followed by 9-14 pairs of recycling growth.
10. The method according to claim 7, wherein the step of growing the N-plane filter layer is: setting the temperature of the reaction chamber to 690 +/-20 ℃, introducing TMGa and AsH, growing the GaAs material with the thickness of 2500nm-3500nm on the N-type current expansion layer by adopting SiH 4 As an N-type dopant, the doping concentration is 1X 10 18 cm -3 -2×10 18 cm -3 (ii) a The growth steps of the P-side filter layer are as follows: setting the temperature of the reaction chamber to 690 +/-20 ℃, introducing TMGa and AsH, growing the GaAs material with the thickness of 1500-2000 nm by adopting CCl 4 As a P-type dopant, the doping concentration is 1X 10 18 cm -3 -2×10 18 cm -3 。
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