CN113161454A - Epitaxial structure of red light chip for phototherapy and preparation method - Google Patents
Epitaxial structure of red light chip for phototherapy and preparation method Download PDFInfo
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- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
- H01L33/105—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
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- A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
- A61N5/00—Radiation therapy
- A61N5/06—Radiation therapy using light
- A61N2005/0658—Radiation therapy using light characterised by the wavelength of light used
- A61N2005/0662—Visible light
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Abstract
The invention relates to the technical field of light emitting diodes and the field of optical medical instruments, and particularly discloses an epitaxial structure of a red-yellow optical chip for phototherapy and a preparation method. The epitaxial structure of the red-yellow optical chip for phototherapy comprises a GaAs substrate layer, a super-radiation light-emitting diode region, a tunnel junction and a light-emitting diode region, wherein the super-radiation light-emitting diode region, the tunnel junction and the light-emitting diode region are sequentially arranged on the GaAs substrate layer. The super-radiation light-emitting diode region comprises a first waveguide layer, a first quantum well layer and a second waveguide layer, the first quantum well layer is arranged between the first waveguide layer and the second waveguide layer, and the second waveguide layer is located above the first waveguide layer. The red-yellow optical chip for phototherapy can be used as a light source of a phototherapy instrument, and compared with a traditional light-emitting diode light source, the red-yellow optical chip has the advantages of being high in frequency distribution concentration degree and narrow in half-wave width, and the treatment effect can be improved.
Description
Technical Field
The application relates to the technical field of light-emitting diodes and the field of optical medical instruments, in particular to an epitaxial structure of a red and yellow light chip for phototherapy and a preparation method of the red and yellow light chip.
Background
Phototherapy has been a technology that has been developed for hundreds of years and is commonly used to treat skin disorders. In the development of phototherapy technology, phototherapy methods such as visible light phototherapy, infrared phototherapy, and ultraviolet phototherapy are sequentially performed. An ideal phototherapy apparatus should have the following characteristics (1) high concentration of light in frequency distribution; (2) the illumination is uniform.
The red and yellow light phototherapy belongs to one type of visible light phototherapy, has strong penetration capability to human bodies and obvious curative effect, and is widely applied to various fields of clinical treatment. At present, with the rapid development of led technology, leds have replaced traditional light sources, becoming the main light source for red and yellow phototherapy. The light emitting diode consists of a PN junction, and when current is introduced into the light emitting diode, electrons from an n region and holes from a p region are recombined at the junction of the p region and the n region, and energy is released to emit light. Due to the randomness of the recombination of electrons and holes, the light emitting diode has a larger light emitting angle and a larger coverage area compared with the traditional phototherapy light source.
In view of the above-mentioned related arts, the inventors believe that, when the light emitting diode is used as a light source of a phototherapy apparatus, although the light emitting diode realizes a larger light emitting angle, since the electron and hole recombination has randomness, the light emitting frequency distribution of the light emitting diode is more dispersed, resulting in a wider half-wave width, and a part of the emitted light does not contribute to the treatment, so that it is difficult to achieve a better treatment effect.
Disclosure of Invention
In order to improve red yellow light emitting diode's half-wave width broad, be difficult to reach better treatment, the application provides a phototherapy epitaxial structure and preparation method with red yellow light chip.
First aspect, the application provides an epitaxial structure of red yellow light chip for phototherapy, adopts following technical scheme:
the utility model provides an epitaxial structure of red yellow light chip for phototherapy, includes the GaAs substrate layer and locates super radiant light emitting diode area under control, tunnel junction and the emitting diode area under control on the GaAs substrate layer in proper order, super radiant light emitting diode area under control includes first waveguide layer, first quantum well layer and second waveguide layer, first quantum well layer is located between first waveguide layer and the second waveguide layer, just the second waveguide layer is located first waveguide layer top.
By adopting the technical scheme, in the working process, the impressed current downwards propagates through the light emitting diode region, passes through the tunnel junction by means of the tunneling effect, then passes through the light emitting diode region and finally leaves from the substrate layer. Under the drive of current, electrons and holes are combined in the first quantum well layer and emit light. The light emitted by the first quantum well layer is restrained by the first waveguide layer and the second waveguide layer, the half wave width and the light emitting angle are reduced, then the light propagates upwards and passes through the tunnel junction, and finally the light and the light emitted by the light emitting diode region leave the chip together. When the light emitted from the superluminescent light emitting diode region is mixed with the light emitted from the light emitting diode region, although the light emitting angle is reduced, the light emitting angle is still larger than that in the case where the superluminescent light emitting diode region is separately provided; compared with the single LED region, the half-wave width of light is averaged, the total half-wave width is reduced, and the frequency distribution of light is more concentrated, thereby being beneficial to improving the treatment effect.
Preferably, the light emitting diode region includes an n-type GaAs layer, a second quantum well layer, and a p-type GaAs layer sequentially disposed above the tunnel junction.
By adopting the technical scheme, when an external current passes through the light emitting diode region, electrons provided by the n-type GaAs layer and holes provided by the p-type GaAs layer are driven by the current to be compounded and emit light in the second quantum well layer. Since the n-type GaAs layer and the p-type GaAs layer only provide carriers and do not have a confinement effect on light, light emitted from the light emitting diode region has a large half-wave width and a large light emitting angle.
Preferably, a first reflection layer is arranged between the GaAs substrate layer and the first waveguide layer, a second reflection layer is arranged between the tunnel junction and the second waveguide layer, and the reflectivity of the first reflection layer is greater than that of the second reflection layer.
By adopting the technical scheme, the light emitted by the superluminescent light emitting diode region is continuously reflected between the first reflecting layer and the second reflecting layer. In the reflection process, the first reflection layer and the second reflection layer jointly form a resonant cavity, and the resonant cavity plays a positive feedback role on light in red and yellow light frequency bands, so that the light proportion emitted by the super-radiation light emitting diode region is increased, and the half-wave width of the light is reduced. Since the reflectivity of the second reflective layer is less than that of the first reflective layer, the refracted light generated at the second reflective layer will propagate upward and eventually join with the light of the light emitting diode region.
Preferably, the first reflective layer is a first DBR layer, the second reflective layer is a second DBR layer, and the first DBR layer and the second DBR layer are each composed of GaAs layers and AlAs layers which are alternately arranged.
By adopting the technical scheme, when light passes through the GaAs layer and the AlAs layer, the bandgap is formed between the GaAs layer and the AlAs layer, and the bandgap has a selective effect on the frequency of the light, so that the frequency distribution range of the light is reduced, the half-wave width is further reduced, and the light emitting angle is increased.
Optionally, the number of cycles of the alternating arrangement of the GaAs layer and the AlAs layer in the first DBR layer is 3 to 50, the number of cycles of the alternating arrangement of the GaAs layer and the AlAs layer in the second DBR layer is 3 to 20, and the number of cycles of the alternating arrangement of the GaAs layer and the AlAs layer in the first DBR layer is greater than the number of cycles of the alternating arrangement of the GaAs layer and the AlAs layer in the second DBR layer.
By adopting the technical scheme, the reflectivity of the first DBR layer is higher than that of the second DBR layer because the number of the cycles of the alternating arrangement of the GaAs layer and the AlAs layer in the first DBR layer is larger than that of the cycles of the alternating arrangement of the GaAs layer and the AlAs layer in the second DBR layer. The larger the number of cycles of the GaAs layer and the AlAs layer which are alternately arranged is, the higher the reflectivity of the first DBR layer and the second DBR layer is, the stronger the positive feedback effect on light emitted by the super-radiation light-emitting diode region is, the more the light proportion emitted by the super-radiation light-emitting diode region is increased, so that the half-wave width is reduced, and the light-emitting angle is increased. When the number of cycles of the GaAs layer and the AlAs layer alternately arranged is too large, the half-wave width is increased and the light emission angle is decreased because the number of times of reflection and refraction of light in the first DBR layer and the second DBR layer is too large and the interference between the refracted light and the reflected light is enhanced.
Preferably, a p-type GaAs contact layer is further arranged above the p-type GaAs layer, and the doping concentration of the p-type GaAs contact layer is greater than that of the p-type GaAs layer.
By adopting the technical scheme, when external current is introduced into the chip, metal needs to be deposited above the p-type GaAs layer of the chip. Because the doping concentration of the p-type GaAs contact layer is greater than that of the p-type GaAs layer, a transition region of the doping concentration is formed, the ohmic contact performance between the p-type GaAs layer and the metal sheet is improved, the resistance between the metal and the chip is reduced, and an external voltage is concentrated inside the chip, so that the light-emitting effect is improved.
Preferably, the doping concentration range of the p-type GaAs contact layer is 1E18-1E22/cm3。
By adopting the technical scheme, the larger the doping concentration of the p-type GaAs contact layer is, the better the ohmic contact performance between the p-type GaAs layer and the metal sheet is, so that the light-emitting effect is gradually improved along with the increase of the doping concentration of the p-type GaAs contact layer, the half-wave width is further reduced, and the light-emitting angle is increased. However, when the doping concentration of the p-type GaAs contact layer is too high, the chip light emission is adversely affected.
Preferably, an electron blocking layer is disposed between the second DBR layer and the second waveguide layer.
By adopting the technical scheme, when an external current passes through the chip, the electron blocking layer blocks electrons, so that the current is uniformly dispersed on the cross section of the chip, the possibility of difference of the distribution density of carriers at each position in the chip due to nonuniform distribution of the current is reduced, the light-emitting angle is increased, and the half-wave width is reduced.
Preferably, the electron blocking layer is composed of a p-type AlGaAs layer, and the thickness of the electron blocking layer is between 30 and 200 nm.
By adopting the technical scheme, the larger the thickness of the electron blocking layer is, the better the uniformity of current distribution is, the better the light emitting effect of the chip is, the larger the light emitting angle can be increased, and the half wave width can be reduced. When the thickness of the electron blocking layer is too large, the current is weakened due to the fact that the blocking capacity of electrons is too strong, the light emitting effect of the chip is affected, the light emitting angle is reduced, and the half wave width is increased.
In a second aspect, the present application provides a method for preparing an epitaxial structure of a red and yellow light chip for phototherapy, including the following steps:
(1) alternately depositing a GaAs layer and an AlAs layer on the GaAs substrate layer to obtain a first DBR layer;
(2) depositing an AlGaAs layer on the first DBR layer to obtain a first waveguide layer;
(3) alternately depositing an InGaAs layer and a GaAs layer on the first waveguide layer to obtain a first quantum well layer;
(4) depositing a p-type InGaAs layer on the first quantum well layer to obtain a second waveguide layer;
(5) depositing a p-type AlGaAs layer on the second waveguide layer to obtain an electron blocking layer;
(6) alternately depositing a GaAs layer and an AlAs layer on the electronic barrier layer to obtain a second DBR layer;
(7) alternately depositing a GaAs layer and an AlGaAs layer on the second DBR layer to obtain a tunnel junction;
(8) depositing an n-type GaAs layer on the tunnel junction;
(9) alternately depositing an InGaAs layer and a GaAs layer on the n-type GaAs layer to obtain a second quantum well layer;
(10) depositing a p-type GaAs layer on the second quantum well layer;
(11) and depositing a p-type GaAs contact layer on the p-type GaAs layer to obtain the epitaxial structure of the red and yellow light chip for phototherapy.
By adopting the technical scheme, the new layers are superposed from bottom to top by using a sequential deposition method, and finally the epitaxial structure of the phototherapy red-yellow chip is obtained.
In summary, the present application has the following beneficial effects:
1. this application adopts first waveguide layer and second waveguide layer restriction superradiance emitting diode area under control luminous half wave width to combine superradiance emitting diode area under control with the emitting diode area through the tunnel junction, compare with the condition that sets up the emitting diode area under control alone, the light that the chip sent has the advantage that half wave width is narrow, consequently is favorable to improving treatment.
2. Establish first reflection stratum in this application between GaAs substrate layer and first waveguide layer, be equipped with the second reflection stratum between tunnel junction and second waveguide layer, first reflection stratum forms the resonant cavity with the second reflection stratum jointly, has carried out positive feedback to the light that super-radiation luminescence diode area was managed and is sent, makes the proportion increase of red yellow light, has reduced half wave width of light, has increased luminous angle.
3. In the application, the p-type GaAs contact layer is arranged above the p-type GaAs layer, and the doping concentration of the p-type GaAs contact layer is greater than that of the p-type GaAs layer, so that the ohmic contact performance between the p-type GaAs layer and metal is improved, an external voltage is concentrated inside the chip, and the light-emitting effect of the chip is improved.
4. According to the method, the super-radiation light-emitting diode area, the tunnel junction and the light-emitting diode area are sequentially obtained on the basis of the GaAs substrate layer through a sequential deposition method, and finally the epitaxial structure of the red-yellow light chip for phototherapy is successfully prepared.
Drawings
Fig. 1 is a schematic overall structure diagram of an epitaxial structure of a red-yellow light chip for phototherapy according to an embodiment of the present application.
Reference numerals: 1. a GaAs substrate layer; 2. a first reflective layer; 3. a first waveguide layer; 4. a first quantum well layer; 5. a second waveguide layer; 6. an electron blocking layer; 7. a second reflective layer; 8. a tunnel junction; 9. an n-type GaAs layer; 10. a second quantum well layer; 11. a p-type GaAs layer; 12. a p-type GaAs contact layer.
Detailed Description
Examples
In the embodiment of the application, the doping concentration refers to the number of doping atoms per cubic centimeter in the semiconductor material, and the unit is/cm3(ii) a The period number being in alternating layersIn the structure, the number of times a repeating unit composed of two adjacent layers is repeated in the entire structure.
Example 1
The embodiment of the application discloses phototherapy with epitaxial structure of red yellow light chip, refer to fig. 1, phototherapy with epitaxial structure of red yellow light chip includes GaAs substrate layer 1, super radiant emission secondary district under control, tunnel junction 8 and emitting diode district under control. The super-radiation light-emitting diode area is arranged above the substrate layer, the tunnel junction 8 is arranged above the super-radiation light-emitting diode area, and the light-emitting diode area is arranged above the tunnel junction 8. The superradiance light emitting diode area is in charge of includes first waveguide layer 3, first quantum well layer 4 and second waveguide layer 5, and first waveguide layer 3 is located 1 tops of GaAs substrate layer, and first quantum well layer 4 is located first waveguide layer 3 tops, and second waveguide layer 5 is located first quantum well layer 4 tops. The light emitting diode region comprises an n-type GaAs layer 9, a second quantum well layer 10 and a p-type GaAs layer 11, wherein the n-type GaAs layer 9 is arranged above the tunnel junction 8, the second quantum well layer 10 is arranged above the n-type GaAs layer 9, and the p-type GaAs layer 11 is arranged above the second quantum well layer 10.
The embodiment of the application also discloses a preparation method of the epitaxial structure of the red and yellow light chip for phototherapy, wherein the production equipment adopts iTopsA330 type magnetron sputtering coating equipment produced by northern microelectronics Limited company, and the preparation method comprises the following steps:
(1) putting the GaAs substrate layer 1 into a processing cavity, vacuumizing the processing cavity, raising the temperature to 750 ℃, and then increasing the temperature by 150cm3Helium gas was introduced into the process chamber at a rate of/min until the gas pressure stabilized. Then, depositing an AlGaAs layer on the GaAs substrate layer 1 to obtain a first waveguide layer 3;
(2) alternately depositing an InGaAs layer and a GaAs layer on the first waveguide layer 3 to obtain a first quantum well layer 4 after the alternate deposition;
(3) depositing a p-type InGaAs layer on the first quantum well layer 4 to obtain a second waveguide layer 5;
(4) alternately depositing a GaAs layer and an AlGaAs layer on the second waveguide layer 5 to obtain a tunnel junction 8 after the alternate deposition;
(5) depositing an n-type GaAs layer 9 on the tunnel junction 8;
(6) alternately depositing an InGaAs layer and a GaAs layer on the n-type GaAs layer 9 to obtain a second quantum well layer 10;
(7) and depositing a p-type GaAs layer 11 on the second quantum well layer 10 to obtain an epitaxial structure of the red and yellow light chip for phototherapy.
Examples 2 to 11
The following description will be given by taking example 2 as an example.
Example 2
The present embodiment is different from embodiment 1 in that a first reflection layer 2 is provided between the GaAs substrate layer 1 and the first waveguide layer 3, and a second reflection layer 7 is provided between the tunnel junction 8 and the second waveguide layer 5. The first reflective layer 2 is a first DBR layer, the second reflective layer 7 is a second DBR layer, the first DBR layer is composed of GaAs layers and AlAs layers alternately arranged for 30 periods, and the second DBR layer is composed of GaAs layers and AlAs layers alternately arranged for 3 periods.
The preparation method of this example is as follows:
(1) putting the GaAs substrate layer 1 into a processing cavity, vacuumizing the processing cavity, raising the temperature to 750 ℃, and then increasing the temperature by 150cm3Helium gas was introduced into the process chamber at a rate of/min until the gas pressure stabilized. Then, alternately depositing a GaAs layer and an AlAs layer on the GaAs substrate layer 1, and obtaining a first DBR layer after alternately depositing for 30 periods;
(2) depositing an AlGaAs layer on the first DBR layer to obtain a first waveguide layer 3;
(3) alternately depositing an InGaAs layer and a GaAs layer on the first waveguide layer 3 to obtain a first quantum well layer 4 after the alternate deposition;
(4) depositing a p-type InGaAs layer on the first quantum well layer 4 to obtain a second waveguide layer 5;
(5) alternately depositing a GaAs layer and an AlAs layer on the electron blocking layer 6, and obtaining a second DBR layer after 3 periods of alternate deposition;
(6) alternately depositing a GaAs layer and an AlGaAs layer on the second DBR layer to obtain a tunnel junction 8 after the alternate deposition;
(7) depositing an n-type GaAs layer 9 on the tunnel junction 8;
(8) and alternately depositing an InGaAs layer and a GaAs layer on the n-type GaAs layer 9 to obtain a second quantum well layer 10, and thus obtaining the epitaxial structure of the red and yellow light chip for phototherapy.
As shown in table 1, the main difference between the embodiments 2 to 6 is that the number of cycles of alternating arrangement of the GaAs layer and the AlAs layer in the first DBR layer is different, and the main difference between the embodiments 4 and 7 to 11 is that the number of cycles of alternating arrangement of the GaAs layer and the AlAs layer in the second DBR layer is different.
TABLE 1
Examples 12 to 16
The following description will be made by taking example 12 as an example.
Example 12
This embodiment is different from embodiment 9 in that a p-type GaAs contact layer 12 is further disposed above the p-type GaAs layer 11, the doping concentration of the p-type GaAs contact layer 12 is greater than that of the p-type GaAs layer 11, and the doping concentration of the p-type GaAs layer 11 is 1E16/cm3The doping concentration of the p-type GaAs contact layer 12 is 1E18/cm3。
The preparation method of this example is as follows:
(1) and (3) putting the GaAs substrate layer 1 into a processing cavity, vacuumizing the processing cavity, raising the temperature to 750 ℃, and introducing helium into the processing cavity at the speed of 150cm & lt 3 & gt/min until the air pressure is stable. Then, alternately depositing a GaAs layer and an AlAs layer on the GaAs substrate layer 1 to obtain a first DBR layer after alternately depositing;
(2) depositing an AlGaAs layer on the first DBR layer to obtain a first waveguide layer 3;
(3) alternately depositing an InGaAs layer and a GaAs layer on the first waveguide layer 3 to obtain a first quantum well layer 4 after the alternate deposition;
(4) depositing a p-type InGaAs layer on the first quantum well layer 4 to obtain a second waveguide layer 5;
(5) alternately depositing a GaAs layer and an AlAs layer on the second waveguide layer 5 to obtain a second DBR layer after the alternate deposition;
(6) alternately depositing a GaAs layer and an AlGaAs layer on the second DBR layer to obtain a tunnel junction 8 after the alternate deposition;
(7) depositing an n-type GaAs layer 9 on the tunnel junction 8;
(8) alternately depositing an InGaAs layer and a GaAs layer on the n-type GaAs layer 9 to obtain a second quantum well layer 10;
(9) and depositing a p-type GaAs contact layer 12 on the p-type GaAs layer 11 to obtain the epitaxial structure of the red and yellow light chip for phototherapy.
As shown in table 2, examples 12 to 16 differ mainly in the doping concentration of the p-type GaAs contact layer 12.
TABLE 2
| Sample(s) | Doping concentration/cm of p-type GaAs contact layer3 |
| Example 12 | 1E18 |
| Example 13 | 1E19 |
| Example 14 | 1E20 |
| Example 15 | 1E21 |
| Example 16 | 1E22 |
Examples 17 to 20
The following description will be made by taking example 17 as an example.
Example 17
This embodiment is different from embodiment 14 in that an electron blocking layer 6 is provided between the second DBR layer and the second waveguide layer 5, the electron blocking layer 6 is a p-type AlGaAs layer, and the thickness of the electron blocking layer 6 is 30 nm.
The preparation method of this example is as follows:
(1) putting the GaAs substrate layer 1 into a processing cavity, vacuumizing the processing cavity, raising the temperature to 750 ℃, and then increasing the temperature by 150cm3Helium gas was introduced into the process chamber at a rate of/min until the gas pressure stabilized. Then, alternately depositing a GaAs layer and an AlAs layer on the GaAs substrate layer 1 to obtain a first DBR layer after alternately depositing;
(2) depositing an AlGaAs layer on the first DBR layer to obtain a first waveguide layer 3;
(3) alternately depositing an InGaAs layer and a GaAs layer on the first waveguide layer 3 to obtain a first quantum well layer 4 after the alternate deposition;
(4) depositing a p-type InGaAs layer on the first quantum well layer 4 to obtain a second waveguide layer 5;
(5) depositing a p-type AlGaAs layer on the second waveguide layer 5 to obtain an electron blocking layer 6;
(6) alternately depositing a GaAs layer and an AlAs layer on the electron blocking layer 6 to obtain a second DBR layer after the alternate deposition;
(7) alternately depositing a GaAs layer and an AlGaAs layer on the second DBR layer to obtain a tunnel junction 8 after the alternate deposition;
(8) depositing an n-type GaAs layer 9 on the tunnel junction 8;
(9) alternately depositing an InGaAs layer and a GaAs layer on the n-type GaAs layer 9 to obtain a second quantum well layer 10;
(10) and depositing a p-type GaAs contact layer 12 on the p-type GaAs layer 11 to obtain the epitaxial structure of the red and yellow light chip for phototherapy.
As shown in Table 3, examples 17 to 20 differ mainly in the thickness of the electron blocking layer.
TABLE 3
| Sample(s) | Thickness/nm of the electron blocking layer |
| Example 17 | 30 |
| Example 18 | 80 |
| Example 19 | 150 |
| Example 20 | 200 |
Comparative example
Comparative example 1
This comparative example is compared to example 2, except that the first reflective layer is a first silver reflective coating and the second reflective layer is a second silver reflective coating.
Comparative example 2
This comparative example is compared with example 1, except that the tunnel junction 8 is not included.
Comparative example 3
This comparative example is compared with example 1, except that a superluminescent light emitting diode region is not included.
Comparative example 4
This comparative example is compared with example 1, except that a light emitting diode region is not included.
Comparative example 5
This comparative example is compared with example 1, except that the first waveguide layer 3 is replaced with an n-type GaAs layer 9, and the second waveguide layer 5 is replaced with a p-type GaAs layer 11.
Comparative example 6
This comparative example is different from example 12 in that the doping concentration of the p-type GaAs contact layer was 1E17/cm3。
Comparative example 7
This comparative example is different from example 16 in that the doping concentration of the p-type GaAs contact layer was 1E23/cm3。
Comparative example 8
This comparative example is different from example 19 in that the electron blocking layer is a p-type AlGaN layer having a thickness of 150 nm.
Performance test
The emission angle was measured according to GBT13740-1992 test method for divergence angle of laser radiation.
The half-wave width was measured according to SJT11394-2009 semiconductor light emitting diode test method.
Detection method/test method
TABLE 4
The present application is described in detail below with reference to the test data provided in Table 3
As can be seen by combining example 2 and comparative example 1 and table 4, in comparative example 1, since the reflection of the silver reflective coating is mainly diffuse reflection and the silver reflective coating has an absorption effect on light, example 2 has a larger light emission angle and a smaller half-wave width than comparative example 1.
As can be seen from the combination of example 1 and comparative example 2 and table 4, in comparative example 2, since the tunnel junction 8 is not provided, the current hardly passes through the chip, and thus the light emission angle is small and the half-wave width is large. In contrast, in example 1, the carrier can pass through the potential barrier by using the tunneling effect through the arrangement of the tunnel junction 8, so that the light emitting angle is larger and the half-wave width is smaller in example 1 compared with comparative example 2.
As can be seen from the combination of example 1 and comparative example 3 and table 4, in comparative example 3, since the superluminescent light emitting diode region is not provided, the light emitting diode region mainly emits light, and the half-wave width and the light emitting angle are both large. Since light emission is performed by the synergistic effect of the first quantum well layer 4 and the second quantum well layer 10 in example 1 as compared with comparative example 3, the half-wave width and the light emission angle are small in example 1 as compared with comparative example 3.
As can be seen from the combination of example 1 and comparative example 4 and table 4, in comparative example 4, since the light emitting diode region is not provided, the super luminescent diode region emits light mainly, and the half-wave width and the light emission angle are small. In example 1, the first quantum well layer 4 and the second quantum well layer 10 emit light together, compared to comparative example 4, and in example 1, the light emission angle is larger and the half-wave width is larger, compared to comparative example 4.
As can be seen from the combination of example 1 and comparative example 5 and table 4, in comparative example 5, since the first waveguide layer 3 is replaced with the n-type GaAs layer 9 and the second waveguide layer 5 is replaced with the p-type GaAs layer 11, light emitted in the first quantum well layer 4 is not confined, so that comparative example 5 has a larger half-wave width and a larger light emission angle than example 1.
As can be seen by combining comparative example 6 with examples 12 to 16, in comparative example 6, since the doping concentration of the p-type GaAs contact layer is less than 1E18/cm3Therefore, the half-wave width in comparative example 6 is larger than that in any of examples 12 to 16, and the light emission angle is smaller than that in any of examples 12 to 16And (4) an angle.
As can be seen by combining comparative example 7 with examples 12 to 16, in comparative example 7, since the doping concentration of the p-type GaAs contact layer is more than 1E22/cm3Therefore, the half-wave width in comparative example 7 is larger than that in any of examples 12 to 16, and the light emission angle is smaller than that in any of examples 12 to 16.
In comparison example 8, the emission angle of comparison example 8 is smaller than that of example 19, and the half-wave width is larger than that of example 19, because the electron blocking layer is the p-type AlGaN layer with the thickness of 150nm, as can be seen by combining comparison example 8 and example 19.
As can be seen from examples 2 to 11 in combination with table 4, when the number of periods in which the GaAs layer and the AlAs layer are alternately arranged is small, the light emission intensity is low because the reflectance is low and the positive feedback to the reflected light is insufficient, and the light emission angle and the half-wave width are large because the light emission from the light emitting diode region is dominant at this time. When the number of cycles of the GaAs layer and the AlAs layer alternately arranged is too large, the half-wave width is increased and the light emission angle is decreased because the number of times of reflection and refraction of light in the first DBR layer and the second DBR layer is too large and the interference between the refracted light and the reflected light is enhanced. In example 9, the number of cycles of the GaAs layer and the AlAs layer arranged alternately is moderate, the light emitting diode region and the superluminescent light emitting diode region have light emitting capabilities close to each other, the half-wave width is narrow, and the light emitting angle is large.
As can be seen from examples 12 to 16 in combination with table 4, as the doping concentration of the p-type GaAs contact layer 12 increases, the ohmic contact performance between the p-type GaAs layer and the metal sheet increases, the half-wave width decreases, and the light emission angle increases. When the doping concentration of the p-type GaAs contact layer 12 is too high, the current is difficult to be uniformly dispersed in the chip, the half-wave width is too large, and the light-emitting angle is too small. In example 14, the p-type GaAs contact layer 12 has a moderate doping difficulty, and has a large light-emitting angle and a small half-wave width.
As can be seen from examples 17 to 20 in combination with table 4, as the thickness of the electron blocking layer 6 increases, the uniformity of the current distribution increases, and thus the light emission angle increases and the half-wave width decreases. When the thickness of the electron blocking layer 6 is too large, the current is weakened, the half-wave width is too large, and the light emitting angle is too small. In example 17, the thickness of the electron blocking layer 6 was moderate, and the chip had a small half-wave width and a large light emission angle.
The present embodiment is only for explaining the present application, and it is not limited to the present application, and those skilled in the art can make modifications of the present embodiment without inventive contribution as needed after reading the present specification, but all of them are protected by patent law within the scope of the claims of the present application.
Claims (10)
1. The utility model provides an epitaxial structure of reddish yellow light chip for phototherapy, its characterized in that includes GaAs substrate layer (1) and locates superradiance light emitting diode area under control, tunnel junction (8) and the emitting diode area on the GaAs substrate layer (1) in proper order, superradiance light emitting diode area under control includes first waveguide layer (3), first quantum well layer (4) and second waveguide layer (5), first quantum well layer (4) are located between first waveguide layer (3) and second waveguide layer (5), just second waveguide layer (5) are located first waveguide layer (3) top.
2. The epitaxial structure of a red-yellow chip for phototherapy according to claim 1, wherein: the light emitting diode region comprises an n-type GaAs layer (9), a second quantum well layer (10) and a p-type GaAs layer (11) which are sequentially arranged above the tunnel junction (8).
3. The epitaxial structure of a red-yellow chip for phototherapy according to claim 1, wherein: a first reflecting layer (2) is arranged between the GaAs substrate layer (1) and the first waveguide layer (3), a second reflecting layer (7) is arranged between the tunnel junction (8) and the second waveguide layer (5), and the reflectivity of the first reflecting layer (2) is larger than that of the second reflecting layer (7).
4. The epitaxial structure of a red-yellow chip for phototherapy according to claim 3, wherein: the first reflecting layer (2) is a first DBR layer, the second reflecting layer (7) is a second DBR layer, and the first DBR layer and the second DBR layer are composed of GaAs layers and AlAs layers which are arranged alternately.
5. The epitaxial structure of a red-yellow chip for phototherapy according to claim 4, wherein: the number of cycles of the GaAs layer and the AlAs layer in the first DBR layer in the alternating arrangement is 3-50, the number of cycles of the GaAs layer and the AlAs layer in the second DBR layer in the alternating arrangement is 3-20, and the number of cycles of the GaAs layer and the AlAs layer in the first DBR layer in the alternating arrangement is larger than the number of cycles of the GaAs layer and the AlAs layer in the second DBR layer in the alternating arrangement.
6. The epitaxial structure of a red-yellow chip for phototherapy according to claim 2, wherein: a p-type GaAs contact layer (12) is further arranged above the p-type GaAs layer (11), and the doping concentration of the p-type GaAs contact layer (12) is greater than that of the p-type GaAs layer (11).
7. The epitaxial structure of a red-yellow chip for phototherapy according to claim 6, wherein: the p-type GaAs contact layer (12) is subjected to thin film epitaxy at a doping concentration ranging from 1E18-1E 22/cm.
8. The epitaxial structure of a red-yellow chip for phototherapy according to claim 2, wherein: an electron blocking layer (6) is arranged between the second DBR layer and the second waveguide layer (5).
9. The epitaxial structure of a red-yellow chip for phototherapy according to claim 8, wherein: the electron blocking layer (6) is composed of a p-type AlGaAs layer, and the thickness of the electron blocking layer (6) is 30-200 nm.
10. A method for preparing an epitaxial structure of a red-yellow chip for phototherapy according to any one of claims 1-9, comprising the following steps:
(1) alternately depositing a GaAs layer and an AlAs layer on the GaAs substrate layer (1) to obtain a first DBR layer;
(2) depositing an AlGaAs layer on the first DBR layer to obtain a first waveguide layer (3);
(3) alternately depositing InGaAs layers and GaAs layers on the first waveguide layer (3) to obtain a first quantum well layer (4);
(4) depositing a p-type InGaAs layer on the first quantum well layer (4) to obtain a second waveguide layer (5);
(5) depositing a p-type AlGaAs layer on the second waveguide layer (5) to obtain an electron blocking layer (6);
(6) alternately depositing a GaAs layer and an AlAs layer on the electron blocking layer (6) to obtain a second DBR layer;
(7) alternately depositing a GaAs layer and an AlGaAs layer on the second DBR layer to obtain a tunnel junction (8);
(8) depositing an n-type GaAs layer (9) on the tunnel junction (8);
(9) alternately depositing an InGaAs layer and a GaAs layer on the n-type GaAs layer (9) to obtain a second quantum well layer (10);
(10) depositing a p-type GaAs layer (11) on the second quantum well layer (10);
(11) and depositing a p-type GaAs contact layer (12) on the p-type GaAs layer (11) to obtain the epitaxial structure of the red and yellow light chip for phototherapy.
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