CN105914273A - Red and yellow light emitting diode epitaxial wafer and preparation method thereof - Google Patents
Red and yellow light emitting diode epitaxial wafer and preparation method thereof Download PDFInfo
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- CN105914273A CN105914273A CN201610301831.1A CN201610301831A CN105914273A CN 105914273 A CN105914273 A CN 105914273A CN 201610301831 A CN201610301831 A CN 201610301831A CN 105914273 A CN105914273 A CN 105914273A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 230000004888 barrier function Effects 0.000 claims description 28
- 239000012535 impurity Substances 0.000 claims description 24
- 239000011777 magnesium Substances 0.000 claims description 10
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 8
- 229910052749 magnesium Inorganic materials 0.000 claims description 8
- 230000005611 electricity Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 claims 1
- 230000006798 recombination Effects 0.000 abstract description 12
- 238000005215 recombination Methods 0.000 abstract description 12
- 238000005516 engineering process Methods 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 230000000903 blocking effect Effects 0.000 abstract 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 229910000070 arsenic hydride Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000001934 delay Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 150000001875 compounds Chemical group 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000009187 flying Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- JOTBHEPHROWQDJ-UHFFFAOYSA-N methylgallium Chemical compound [Ga]C JOTBHEPHROWQDJ-UHFFFAOYSA-N 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000985 reflectance spectrum Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
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Abstract
The present invention discloses a red and yellow light emitting diode epitaxial wafer and a preparation method thereof, belonging to the field of the semiconductor technology. The epitaxial wafer comprises a N-type substrate, a N-type buffer layer, a N-type reflection layer, a N-type restriction layer, an electronic blocking layer, a multiple quantum well layer, a cavity regulation layer, a P-type restriction layer, a P-type current extension layer and a P-type ohmic contact layer. The electronic blocking layer includes an AlGaInP layer and an AlInP layer; the cavity regulation layer includes a first sublayer and at least two second sublayers; the first sublayer is a non-doped AlInP layer, and a second sublayer includes a P-type doped AlInP layer and a non-doped AlInP layer; and the dosage concentration of the P-type doped AlInP layer is smaller than the P-type doped AlInP layer of the P-type restriction layer. The electronic blocking layer is used for delaying electrons to reach the multiple quantum well layer, and the cavity regulation layer is configured to allow the cavities to be uniformly distributed in the regions closed to the multiple quantum well layer so as to increase the recombination rate of the electrons and the cavities and improve the luminous efficiency of the light emitting diode.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly to a kind of reddish yellow light-emitting diode epitaxial wafer and
Preparation method.
Background technology
The light emitting diode (Light Emitting Diode is called for short LED) of the high brightness AlGaInP system of reddish yellow light
Have that volume is little, life-span length, the advantage such as low in energy consumption, white light source, total colouring, traffic light and
The fields such as city lighting engineering have broad application prospects.
AlGaInP LED includes N-type substrate, N-type cushion, N-type reflecting layer, N from bottom to top
Type limiting layer, multiple quantum well layer, p-type limiting layer, p-type current extending, p-type ohmic contact layer.
During realizing the present invention, inventor finds that prior art at least there is problems in that
Volume and the quality of electronics are respectively less than hole, and therefore mobility and the migration rate of electronics is superior to hole,
Electronics and the compound region occurring mostly in neighbouring p-type limiting layer in hole, luminous efficiency is relatively low.
Summary of the invention
The problem relatively low in order to solve prior art luminous efficiency, embodiments provides a kind of reddish yellow light
LED epitaxial slice and preparation method thereof.Described technical scheme is as follows:
First aspect, embodiments provides a kind of reddish yellow light-emitting diode epitaxial wafer, described reddish yellow
Light-emitting diode epitaxial wafer include N-type substrate and be sequentially laminated on the N-type in described N-type substrate delay
Rush layer, N-type reflecting layer, N-type limiting layer, multiple quantum well layer, p-type limiting layer, p-type current extending,
P-type ohmic contact layer, described reddish yellow light-emitting diode epitaxial wafer also includes being layered in described N-type limiting layer
And electronic barrier layer between described multiple quantum well layer and be layered in described multiple quantum well layer and described p-type
Hole adjustment layer between limiting layer, described electronic barrier layer includes AlGaInP layer and AlInP layer, described
Hole adjustment layer includes the first sublayer and at least two-layer the second sublayer, and described first sublayer is the AlInP of undoped
Layer, described second sublayer includes AlInP layer and the AlInP layer of undoped that p-type adulterate, the doping of described p-type
The doping content of AlInP layer less than the doping content of described p-type limiting layer.
Alternatively, the thickness of described AlGaInP layer is 20～50nm.
Alternatively, the thickness of the AlInP layer in described electronic barrier layer is 8～15nm.
Alternatively, the thickness of described first sublayer is 90～220nm.
Alternatively, the number of plies of described second sublayer is 2～9 layers.
Alternatively, the thickness phase of thickness and the AlInP layer of described undoped of the AlInP layer of described p-type doping
With.
Alternatively, the thickness of the AlInP layer of described p-type doping is 10～20nm.
Alternatively, the thickness of the AlInP layer of described undoped is 10～20nm.
Alternatively, the impurity of the AlInP layer of described p-type doping is magnesium elements, the doping of described p-type
The doping content of AlInP layer is 10-17～5*10-17cm-3。
Second aspect, embodiments provides a kind of reddish yellow light-emitting diode as described in relation to the first aspect
The preparation method of epitaxial wafer, described preparation method includes:
N-type substrate is formed N-type cushion；
Described N-type cushion is formed N-type reflecting layer；
Described N-type reflecting layer is formed N-type limiting layer；
On described N-type limiting layer formed electronic barrier layer, described electronic barrier layer include AlGaInP layer and
AlInP layer；
Described electronic barrier layer is formed multiple quantum well layer；
Forming hole adjustment layer on described multiple quantum well layer, described hole adjustment layer includes the first sublayer and extremely
Few two-layer the second sublayer, described first sublayer is the AlInP layer of undoped, and described second sublayer includes p-type
The AlInP layer of doping and the AlInP layer of undoped, the doping content of the AlInP layer of described p-type doping is less than
The doping content of described p-type limiting layer；
Described hole adjustment layer is formed p-type limiting layer；
Described p-type limiting layer is formed p-type current extending；
Described p-type current extending is formed p-type ohmic contact layer.
The technical scheme that the embodiment of the present invention provides has the benefit that
By stacking electronic barrier layer between N-type limiting layer and multiple quantum well layer, electronics is delayed to reach volume
Sub-well layer, stacking hole adjustment layer between multiple quantum well layer and p-type limiting layer so that hole is uniformly distributed
In the region closing on multiple quantum well layer, increase electronics and the recombination probability in hole, improve sending out of light emitting diode
Light efficiency.Meanwhile, the doping content of hole adjustment layer is relatively low, can be prevented effectively from impurity and be diffused into many
Quantum well layer and strengthen the probability of non-radiative recombination.
Accompanying drawing explanation
For the technical scheme being illustrated more clearly that in the embodiment of the present invention, institute in embodiment being described below
The accompanying drawing used is needed to be briefly described, it should be apparent that, the accompanying drawing in describing below is only the present invention
Some embodiments, for those of ordinary skill in the art, on the premise of not paying creative work,
Other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of a kind of reddish yellow light-emitting diode epitaxial wafer that the embodiment of the present invention one provides；
Fig. 2 a be the embodiment of the present invention one provide N-type limiting layer, electronic barrier layer, multiple quantum well layer, with
And the energy band schematic diagram of p-type limiting layer；
Fig. 2 b is the hole adjustment layer that provides of the embodiment of the present invention one and the distribution of p-type limiting layer doping content is shown
It is intended to；
Fig. 3 is the preparation method of a kind of reddish yellow light-emitting diode epitaxial wafer that the embodiment of the present invention two provides
Flow chart.
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing to the present invention
Embodiment is described in further detail.
Embodiment one
Embodiments providing a kind of reddish yellow light-emitting diode epitaxial wafer, see Fig. 1, this reddish yellow light is sent out
Optical diode epitaxial wafer includes N-type substrate 1 and the N-type cushion being sequentially laminated in N-type substrate 1
2, N-type reflecting layer 3, N-type limiting layer 4, electronic barrier layer 5, multiple quantum well layer 6, hole adjustment layer 7,
P-type limiting layer 8, p-type current extending 9, p-type ohmic contact layer 10.
In the present embodiment, N-type substrate 1 is GaAs substrate；N-type cushion 2 is GaAs layer；N-type
Reflecting layer 3 includes alternately laminated AlAs layer 31 and AlGaAs layer 32；N-type limiting layer 4 is AlInP
Layer；Electronic barrier layer 5 includes AlGaInP layer 51 and AlInP layer 52；Multiple quantum well layer 6 includes alternating layer
(it is different that quantum well layer is respectively Al component to folded quantum well layer 61 and quantum barrier layer 62 with quantum barrier layer
AlGaInP layer)；Hole adjustment layer 7 includes the first sublayer 71 and at least two-layer the second sublayer 72, the first son
Layer 71 is the AlInP layer of undoped, and the second sublayer includes AlInP layer 72a that p-type adulterates and undoped
AlInP layer 72b, the doping content of the AlInP layer 72a of p-type doping is dense less than the doping of p-type limiting layer 8
Degree；P-type limiting layer 8 is AlInP layer；P-type current extending 9 is GaP layer；P-type ohmic contact layer 10
For GaP layer.
Fig. 2 a is N-type limiting layer 4, electronic barrier layer 5, multiple quantum well layer 6 and p-type limiting layer 8
Can band schematic diagram.As shown in Figure 2 a, N-type limiting layer 4, AlInP layer 52, p-type limiting layer 8 use
The energy that can carry materials A lGaInP used higher than AlGaInP layer 51 and multiple quantum well layer 6 of materials A lInP
Band, therefore part electronics can be blocked in AlGaInP layer 51 by AlInP layer 52, delays electronics to arrive
Multiple quantum well layer 6.
Fig. 2 b is hole adjustment layer 7 and the distribution schematic diagram of p-type limiting layer 8 doping content.Such as Fig. 2 b institute
Show, the AlInP layer of undoped, low-doped AlInP layer, highly doped AlInP layer doping content gradually
Increasing, the doping content of the AlInP layer 72a of p-type doping is less than the doping content of p-type limiting layer 8, favorably
In injection hole, hole adjustment layer 7；Simultaneously take account of the easy diffusibility of Mg, the AlInP layer 72a of p-type doping
Alternately laminated with the AlInP layer 72b of undoped, hole can be made to be evenly distributed in hole adjustment layer 7；Separately
The ground floor closing on outward multiple quantum well layer 6 uses the AlInP layer of undoped, is possible to prevent Mg to be diffused into volume
Sub-well layer 6 causes non-radiative recombination.
Specifically, N-type substrate 1 can be A+5 ° of GaAs substrate of 100 deflections " 111 " of 2 or 4 cun.
Alternatively, the thickness of N-type substrate 1 can be 340～360 μm.
Alternatively, the impurity of N-type substrate 1 can be element silicon, and the doping content of N-type substrate 1 can
Think 10-18～2*10-18cm-3。
Alternatively, the thickness of N-type cushion 2 can be 150～250nm.When the thickness of N-type cushion is little
When 150nm, it is impossible to cover the defect of N-type substrate 1；When the thickness of N-type cushion is more than 250nm
Time, cause waste.
Alternatively, the impurity of N-type cushion 2 can be element silicon, and the doping of N-type cushion 2 is dense
Degree can be 10-18～2*10-18cm-3。
Preferably, the doping content of N-type cushion 2 can be 10-18cm-3。
Alternatively, the impurity in N-type reflecting layer 3 can be element silicon, and the doping in N-type reflecting layer 3 is dense
Degree can be 2*10-18～8*10-18cm-3.When the doping content in N-type reflecting layer 3 is less than 2*10-18cm-3Time,
Forward voltage is higher；When the doping content in N-type reflecting layer 3 is more than 8*10-18cm-3Time, too much impurity is made
Become SQW to send photon equilibrium state, affect chip brightness.
In actual applications, AlAs layer 31 and AlGaAs layer 32 injects same amount of alloy, adulterates dense
Degree difference, the doping content of AlAs layer 31 is less than the doping content of AlGaAs layer 32.Specifically, AlAs
The doping content of layer 31 is 2*10-18～4.5*10-18cm-3, the doping content of AlGaAs layer 32 is
4.5*10-18～8*10-18cm-3。
Alternatively, the number of plies sum of AlAs layer 31 and AlGaAs layer 32 can be 30～60.
It is to be appreciated that the number of plies sum of AlAs layer 31 and AlGaAs layer 32 mainly affects chip brightness.
When the number of plies of AlAs layer 31 and AlGaAs layer 32 reaches 60, the reflectance of emergent light is essentially 100%,
The number of plies sum being further added by AlAs layer 31 and AlGaAs layer 32 has not had much effects, but also can shadow
Ring chip voltage.In actual applications, the number of plies sum of AlAs layer 31 and AlGaAs layer 32 can basis
Product requirement determines.
Alternatively, the thickness of AlAs layer 31 can be 42～55nm.
Alternatively, the thickness of AlGaAs layer 32 can be 40～50nm.
It should be noted that the thickness range of AlAs layer 31 and AlGaAs layer 32 is to determine according to reflectance spectrum
, exceed above-mentioned scope and do not have reflecting effect.In actual applications, concrete thickness can produce according to producing
The wavelength of product determines, different wavelength needs different thickness.
Alternatively, the impurity of N-type limiting layer 4 can be element silicon, and the doping of N-type limiting layer 4 is dense
Degree can be 7*10-17～2*10-18cm-3。
Alternatively, the thickness of N-type limiting layer 4 can be 200～500nm.
Alternatively, the thickness of AlGaInP layer 51 can be 20～50nm.When the thickness of AlGaInP layer is less than
During 20nm, it is impossible to effectively accommodate abundant electronics；When the thickness of AlGaInP layer is more than 50nm, cause
The electronics of recombination luminescence is less.
Preferably, the thickness of AlGaInP layer 51 can be 35nm.
Alternatively, the thickness of AlInP layer 52 can be 8～15nm.When the thickness of AlInP layer is less than 8nm,
Cannot effectively stop that electronics injects multiple quantum well layer；When the thickness of AlInP layer is more than 15nm, the electricity of tunnelling
Son is less, and the electronics causing recombination luminescence is few.
Preferably, the thickness of AlInP layer 52 can be 12nm.
Alternatively, the thickness of quantum well layer 61 can be 3～5nm.
Alternatively, the thickness of quantum barrier layer 62 can be 5～7nm.
Alternatively, the thickness of the first sublayer 71 can be 90～220nm.When the thickness of the first sublayer is less than 90nm
Time, the MQW that impurity may spread, causes non-radiative recombination, affects hole and inject；When
When the thickness of one sublayer is more than 220nm, the hole injecting multiple quantum well layer is less.
Preferably, the thickness of the first sublayer 71 can be 140nm.
In actual applications, the thickness of the first sublayer can be true according to the number of plies of the second sublayer 72 and doping content
Fixed.
Alternatively, the number of plies of the second sublayer 72 can be 2～9 layers.When the number of plies of the second sublayer 72 is less than 2
Layer, it is impossible to effectively adjust the distribution in hole；When the number of plies of the second sublayer 72 is more than 9 layers, and p-type limiting layer is noted
Enter to the hole of multiple quantum well layer less.
Preferably, the number of plies of the second sublayer 72 can be 5～6 layers.
Alternatively, the thickness of the AlInP layer 72a of p-type doping and the thickness of the AlInP layer 72b of undoped can
With identical, beneficially hole is uniformly distributed.
Alternatively, the thickness of the AlInP layer 72a of p-type doping can be 10～20nm.When p-type doping
When the thickness of AlInP layer is less than 10nm, it is impossible to effectively adjust the distribution in hole；When hole, adjustment layer thickness is big
When 20nm, affect the injection in hole.
Preferably, the thickness of the AlInP layer 72a of p-type doping can be 14nm.
Alternatively, the thickness of the AlInP layer 72b of undoped can be 10～20nm.AlInP when undoped
When the thickness of layer is less than 10nm, it is impossible to effectively adjust the distribution in hole；Thickness when the AlInP layer of undoped
During more than 20nm, affect the injection in hole.
Preferably, the thickness of the AlInP layer 72b of undoped can be 14nm.
Alternatively, the impurity of the AlInP layer 72a of p-type doping can be magnesium elements, the AlInP of p-type doping
The doping content of layer 72a can be 10-17～5*10-17cm-3.Doping content when the AlInP layer of p-type doping
Less than 10-17cm-3Time, it is impossible to effectively adjust the distribution in hole；When the doping of the AlInP layer of p-type doping is dense
Degree is more than 5*10-17cm-3Time, cause impurity to be diffused into multiple quantum well layer and strengthen the several of non-radiative recombination
Rate.
Preferably, the doping content of the AlInP layer of p-type doping can be 3*10-17cm-3。
Alternatively, the impurity of p-type limiting layer 8 can be magnesium elements, the doping content of p-type limiting layer 8
Can be 7*10-17～10-18cm-3。
Alternatively, the thickness of p-type limiting layer 8 can be 400～600nm.
Alternatively, the impurity of p-type current extending 9 can be magnesium elements, p-type current extending 9
Doping content can be 2*10-18～8*10-18cm-3.When the doping content of p-type current extending is less than 2*10-18
Time, affect voltage；When the doping content of p-type current extending is more than 8*10-18cm-3Time, lattice quality is poor,
Affect luminosity.
Alternatively, the thickness of p-type current extending 9 can be 8～10 μm.When p-type current extending
When thickness is less than 8 μm, affect current expansion；When the thickness of p-type current extending is more than 10 μm,
Epitaxial wafer angularity can be caused to increase, cause such as adverse consequencess such as film flyings.
Alternatively, the impurity of p-type ohmic contact layer 10 can be carbon, to realize higher doping
The growth temperature that concentration is relatively low with adaptation, the doping content of p-type ohmic contact layer 10 can be
3*10-19～10-20cm-3.When the doping content of p-type ohmic contact layer is less than 3*10-19cm-3Time, Ohmic contact
Bad cause voltage higher；When the doping content of p-type ohmic contact layer is more than 10-20cm-3Time, lattice quality
It is deteriorated.
Alternatively, the thickness of p-type ohmic contact layer 10 can be 30～100nm.When p-type ohmic contact layer
Thickness less than 30nm time, voltage difficulty control；When the thickness of p-type ohmic contact layer is more than 100nm,
Affect brightness.
The embodiment of the present invention, by stacking electronic barrier layer between N-type limiting layer and multiple quantum well layer, delays
Electronics reaches multiple quantum well layer, stacking hole adjustment layer between multiple quantum well layer and p-type limiting layer so that
Hole is evenly distributed on the region closing on multiple quantum well layer, increases electronics and the recombination probability in hole, improves and sends out
The luminous efficiency of optical diode.Meanwhile, the doping content of hole adjustment layer is relatively low, can be prevented effectively from doping
Impurity is diffused into multiple quantum well layer and strengthens the probability of non-radiative recombination.
Embodiment two
Embodiments provide the preparation method of a kind of reddish yellow light-emitting diode epitaxial wafer, it is adaptable to system
The reddish yellow light-emitting diode epitaxial wafer that standby embodiment one provides, sees Fig. 3, and this preparation method includes:
Step 201: form N-type cushion in N-type substrate.
In the present embodiment, N-type substrate is GaAs substrate；N-type cushion is GaAs layer.
Specifically, N-type substrate can be A+5 ° of GaAs substrate of 100 deflections " 111 " of 2 or 4 cun.
Alternatively, the thickness of N-type substrate can be 340～360 μm.
Alternatively, the impurity of N-type substrate can be element silicon, and the doping content of N-type substrate 1 is permissible
It is 10-18～2*10-18cm-3。
Specifically, the growth conditions of N-type cushion can be: growth temperature is 640～660 DEG C, TMGa (three
Methyl gallium) flow is 80～100sccm, AsH3(arsenic hydride) flow is 400～450sccm, impurity
For element silicon, doping content is 10-18～2*10-18cm-3, thickness is 150～250nm.
Step 202: form N-type reflecting layer on N-type cushion.
In the present embodiment, N-type reflecting layer includes alternately laminated AlAs layer and AlGaAs layer.
Specifically, the growth conditions in N-type reflecting layer can be: growth temperature is 640～660 DEG C, and TMGa flows
Amount is 80～120sccm, and TMAl (trimethyl aluminium) flow is 180～320sccm, AsH3Flow is
The thickness of 400～500sccm, AlAs layer is 42～55nm, and the thickness of AlGaAs layer is 40～50nm, AlAs
The number of plies sum of layer and AlGaAs layer is 30～60, and impurity is element silicon, and doping content is
2*10-18～8*10-18cm-3。
Step 203: form N-type limiting layer on N-type reflecting layer.
In the present embodiment, N-type limiting layer is AlInP layer.
Specifically, the growth conditions of N-type limiting layer can be: growth temperature is 660～680 DEG C, and TMAl flows
Amount is 100～120sccm, and TMIn (trimethyl indium) flow is 800～850sccm, PH3Flow is
900～1100sccm, impurity is element silicon, and doping content is 7*10-17～2*10-18cm-3, thickness is
200～500nm.
Step 204: form electronic barrier layer on N-type limiting layer.
In the present embodiment, electronic barrier layer includes AlGaInP layer and AlInP layer.
Specifically, the growth conditions of electronic barrier layer can be: growth temperature is 660～680 DEG C, and TMIn flows
Amount is 800～850sccm, PH3Flow is 900～1100sccm；The TMAl flow of AlGaInP layer is
6～35sccm, TMGa flow is 26～40sccm；The TMAl flow of AlInP layer is 100～120sccm；
The thickness of AlGaInP layer is 20～50nm, and the thickness of AlInP layer is 8～15nm.
Step 205: form multiple quantum well layer on electronic barrier layer.
In the present embodiment, multiple quantum well layer includes alternately laminated quantum well layer and quantum barrier layer (SQW
Layer is respectively the AlGaInP layer that Al component is different with quantum barrier layer).
Specifically, the growth conditions of quantum well layer can be: growth temperature is 660～680 DEG C, TMGa flow
Being 26～40sccm, TMAl flow is 6～35sccm, and TMIn flow is 800～850sccm, PH3Flow
Being 900～1100sccm, thickness is 3～5nm.
The growth conditions of quantum barrier layer can be: growth temperature is 660～680 DEG C, and TMGa flow is
5～18sccm, TMAl flow is 70～100sccm, and TMIn flow is 800～850sccm, PH3Flow is
900～1100sccm, thickness is 5～7nm.
Step 206: form hole adjustment layer on multiple quantum well layer.
In the present embodiment, hole adjustment layer includes the first sublayer and at least two-layer the second sublayer, the first sublayer
For the AlInP layer of undoped, the second sublayer includes AlInP layer and the AlInP layer of undoped that p-type adulterates,
The doping content of the AlInP layer of p-type doping is less than the doping content of p-type limiting layer.
Specifically, the growth conditions of hole adjustment layer can be: growth temperature is 660～680 DEG C, and TMAl flows
Amount is 100～120sccm, and TMIn flow is 800～850sccm, PH3Flow is 900～1100sccm, the
The thickness of one sublayer is 90～220nm, and the number of plies of the second sublayer is 2～9 layers, the AlInP layer of p-type doping
Thickness is 10～20nm, and the thickness of the AlInP layer of undoped is 10～20nm, the AlInP layer of p-type doping
Impurity is magnesium elements, and the doping content of the AlInP layer of p-type doping is 10-17～5*10-17cm-3。
Step 207: form p-type limiting layer in the adjustment layer of hole.
In the present embodiment, p-type limiting layer is AlInP layer.
Specifically, the growth conditions of p-type limiting layer can be: growth temperature is 660～680 DEG C, and TMAl flows
Amount is 100～120sccm, and TMIn flow is 800～850sccm, PH3Flow is 900～1100sccm, mixes
Impurity is magnesium elements, and doping content is 7*10-17～10-18cm-3, thickness is 400～600nm.
Step 208: form p-type current extending on p-type limiting layer.
In the present embodiment, p-type current extending is GaP layer.
Specifically, the growth conditions of p-type current extending can be: growth temperature is 690～710 DEG C, TMGa
Flow is 400～600sccm, PH3Flow is 200～500sccm, and impurity is magnesium elements, doping content
For 2*10-18～8*10-18cm-3, thickness is 8～10 μm.
Step 209: form p-type ohmic contact layer on p-type current extending.
In the present embodiment, p-type ohmic contact layer is GaP layer.
Specifically, the growth conditions of p-type ohmic contact layer can be: growth temperature is 630～650 DEG C, TMGa
Flow is 400～600sccm, PH3Flow is 200～500sccm, and impurity is carbon, doping content
For 3*10-19～10-20cm-3, thickness is 30～100nm.
The embodiment of the present invention, by stacking electronic barrier layer between N-type limiting layer and multiple quantum well layer, delays
Electronics reaches multiple quantum well layer, stacking hole adjustment layer between multiple quantum well layer and p-type limiting layer so that
Hole is evenly distributed on the region closing on multiple quantum well layer, increases electronics and the recombination probability in hole, improves and sends out
The luminous efficiency of optical diode.Meanwhile, the doping content of hole adjustment layer is relatively low, can be prevented effectively from doping
Impurity is diffused into multiple quantum well layer and strengthens the probability of non-radiative recombination.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all the present invention's
Within spirit and principle, any modification, equivalent substitution and improvement etc. made, should be included in the present invention's
Within protection domain.
Claims (10)
1. a reddish yellow light-emitting diode epitaxial wafer, described reddish yellow light-emitting diode epitaxial wafer includes N-type
Substrate and the N-type cushion being sequentially laminated in described N-type substrate, N-type reflecting layer, N-type restriction
Layer, multiple quantum well layer, p-type limiting layer, p-type current extending, p-type ohmic contact layer, it is characterised in that
Described reddish yellow light-emitting diode epitaxial wafer also includes being layered in described N-type limiting layer and described multiple quantum well layer
Between electronic barrier layer and be layered in the hole between described multiple quantum well layer and described p-type limiting layer
Adjustment layer, described electronic barrier layer includes that AlGaInP layer and AlInP layer, described hole adjustment layer include
One sublayer and at least two-layer the second sublayer, described first sublayer is the AlInP layer of undoped, described second sublayer
Including AlInP layer and the AlInP layer of undoped of p-type doping, the doping of the AlInP layer of described p-type doping
Concentration is less than the doping content of described p-type limiting layer.
Reddish yellow light-emitting diode epitaxial wafer the most according to claim 1, it is characterised in that described
The thickness of AlGaInP layer is 20～50nm.
Reddish yellow light-emitting diode epitaxial wafer the most according to claim 1, it is characterised in that described electricity
The thickness of the AlInP layer in sub-barrier layer is 8～15nm.
Reddish yellow light-emitting diode epitaxial wafer the most according to claim 1, it is characterised in that described
The thickness of one sublayer is 90～220nm.
Reddish yellow light-emitting diode epitaxial wafer the most according to claim 1, it is characterised in that described
The number of plies of two sublayers is 2～9 layers.
Reddish yellow light-emitting diode epitaxial wafer the most according to claim 1, it is characterised in that described P
The thickness of the AlInP layer of type doping is identical with the thickness of the AlInP layer of described undoped.
Reddish yellow light-emitting diode epitaxial wafer the most according to claim 1, it is characterised in that described P
The thickness of the AlInP layer of type doping is 10～20nm.
Reddish yellow light-emitting diode epitaxial wafer the most according to claim 1, it is characterised in that described non-
The thickness of the AlInP layer of doping is 10～20nm.
Reddish yellow light-emitting diode epitaxial wafer the most according to claim 1, it is characterised in that described P
The impurity of the AlInP layer of type doping is magnesium elements, and the doping content of the AlInP layer of described p-type doping is
10-17～5*10-17cm-3。
10. the preparation side of the reddish yellow light-emitting diode epitaxial wafer as described in any one of claim 1-9
Method, it is characterised in that described preparation method includes:
N-type substrate is formed N-type cushion；
Described N-type cushion is formed N-type reflecting layer；
Described N-type reflecting layer is formed N-type limiting layer；
On described N-type limiting layer formed electronic barrier layer, described electronic barrier layer include AlGaInP layer and
AlInP layer；
Described electronic barrier layer is formed multiple quantum well layer；
Forming hole adjustment layer on described multiple quantum well layer, described hole adjustment layer includes the first sublayer and extremely
Few two-layer the second sublayer, described first sublayer is the AlInP layer of undoped, and described second sublayer includes p-type
The AlInP layer of doping and the AlInP layer of undoped, the doping content of the AlInP layer of described p-type doping is less than
The doping content of described p-type limiting layer；
Described hole adjustment layer is formed p-type limiting layer；
Described p-type limiting layer is formed p-type current extending；
Described p-type current extending is formed p-type ohmic contact layer.
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