CN108878601A - A kind of infrared flip LED epitaxial slice structure of GaAs base and preparation method thereof - Google Patents

A kind of infrared flip LED epitaxial slice structure of GaAs base and preparation method thereof Download PDF

Info

Publication number
CN108878601A
CN108878601A CN201810676839.5A CN201810676839A CN108878601A CN 108878601 A CN108878601 A CN 108878601A CN 201810676839 A CN201810676839 A CN 201810676839A CN 108878601 A CN108878601 A CN 108878601A
Authority
CN
China
Prior art keywords
gaas
layer
thickness
atom
doping concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201810676839.5A
Other languages
Chinese (zh)
Other versions
CN108878601B (en
Inventor
王建立
肖成峰
王成新
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shandong Huaguang Optoelectronics Co Ltd
Original Assignee
Shandong Inspur Huaguang Optoelectronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shandong Inspur Huaguang Optoelectronics Co Ltd filed Critical Shandong Inspur Huaguang Optoelectronics Co Ltd
Priority to CN201810676839.5A priority Critical patent/CN108878601B/en
Publication of CN108878601A publication Critical patent/CN108878601A/en
Application granted granted Critical
Publication of CN108878601B publication Critical patent/CN108878601B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system

Abstract

The present invention relates to infrared flip LED epitaxial slice structure of a kind of GaAs base and preparation method thereof, by it is lower from it is upper successively include GaAs buffer layer, GaxIn1‑xP corrosion barrier layer, AlyGaAs ohmic contact layer, N-AlzGaAs roughened layer, AlaGaAs lower limit layer, InGaAs/AlbGaAs quantum well radiation area, AlcGaAs upper limiting layer, AldGa1‑dInP transition zone, P-GaP current extending；The problem of AlxGaAs material of p-type current expansion is changed to the current extending of AlxGa1-xInP material transition and GaP material by the present invention, reduces light absorption, improves light extraction efficiency, reduces element power loss.P-type AlGaAs limiting layer of the present invention replaces Mg doping to reduce defect using C auto-dope, improves into crystalloid amount.

Description

A kind of infrared flip LED epitaxial slice structure of GaAs base and preparation method thereof
Technical field
The present invention relates to infrared flip LED epitaxial slice structures of a kind of GaAs base and preparation method thereof, belong to photoelectron technology Field.
Background technique
There are many type of light-emitting component, and the light-emitting component of infrared light-emitting component and visible light is broadly divided into according to spectrum. In general, the infrared light-emitting diode cut-in voltage of GaAs about needs 1V, and the incision of the red light emitting diodes of gallium matter is electric Pressure about needs 1.8V；Green LED cut-in voltage about needs 2.0V or so.After the voltage of addition is more than cut-in voltage, electric current Just rapidly rise, and ambient temperature is very big on the influence of the cut-in voltage of diode, when temperature is higher, will make its cut-in voltage number Value increases, conversely, cut-in voltage reduces.Infrared light-emitting diode works in backward voltage, only small leakage current, but When backward voltage is more than breakdown voltage, a large amount of electric current is soon generated, element is burnt, general infrared diode is reversed The value of pressure resistance is about 3-6V, avoids this situation as far as possible when in use.
The heat loss of infrared light-emitting diode, be because the additional voltage of element, generation current accumulation due to come, remove Sub-fraction energy as the transmitting of light outside, it is most of to form thermal energy and distribute, the i.e. so-called loss of the thermal energy distributed.Member The power loss of part, in 60% or less range of maximum value, element uses above can be very safe, the loss maximum value of power and week It encloses temperature and further relates to and be.
Chinese patent literature CN106299058A discloses a kind of epitaxial wafer for upside-down mounting infrared light-emitting diode, is serving as a contrast Successively epitaxial layer, active layer include in period alternate InGaAs quantum well layer and GaAsP barrier layer, the periodicity for bottom the same side InGaAs/GaAsP strain-compensated quantum well structure is used in active layer for 2~6, current-carrying can inhibit using strain-compensated quantum well The dislocation that flows laterally to of son forms non-radiative recombination, to improve quantum efficiency.The patent mainly passes through optimization strain and mends Quantum Well is repaid to improve internal quantum efficiency, does not improve other extension conventional structures, cannot be played and be improved light extraction efficiency, reduce element The effect of power loss.
Summary of the invention
In view of the deficiencies of the prior art, the present invention provides a kind of infrared flip LED epitaxial slice structures of GaAs base；
The present invention also provides the preparation methods of above-mentioned LED epitaxial wafer structure；
Term is explained：
1, MOCVD is metallorganic chemical vapor deposition (Metalorganic Chemical Vapor Deposition abbreviation).
The technical scheme is that：
A kind of infrared flip LED epitaxial slice structure of GaAs base, by it is lower from it is upper successively include GaAs buffer layer, GaxIn1-xP is rotten Lose barrier layer, AlyGaAs ohmic contact layer, N-AlzGaAs roughened layer, AlaGaAs lower limit layer, InGaAs/AlbGaAs quantum Trap luminous zone, AlcGaAs upper limiting layer, AldGa1-dInP transition zone, P-GaP current extending；X is 0.3-0.5, y 0-0.3, Z is 0.1-0.3, a 0.3-0.5, b 0.3-0.5, c 0.3-0.5, d 0.1-0.3；The P-GaP current extending Material is GaP；The AlaGaAs lower limit layer and the AlcDoped with C, doping concentration 4.0- in GaAs upper limiting layer 6.0E17 a atom/cm3。
The material of P-GaP current extending is GaP, reduces light absorption, improves light extraction efficiency, reduces element power loss Problem；AlaGaAs lower limit layer and AlcDefect is reduced doped with C in GaAs upper limiting layer, is improved into crystalloid amount.
It is further preferred that x=0.5；X=0.5；Y=0.3；Z=0.2；A=0.3；B=0.4；C=0.3；D=0.2.
It is preferred according to the present invention, the GaAs buffer layer with a thickness of 200-500nm, doping concentration 1E17-5E18 A atom/cm3；The GaxIn1-xP corrosion barrier layer with a thickness of 100-500nm, doping concentration be 1E17-5E18 atom/ cm3；The AlyGaAs ohmic contact layer with a thickness of 100-300nm, doping concentration is 1E18-5E18 atom/cm3；It is described N-AlzGaAs roughened layer with a thickness of 3000-10000nm, doping concentration is 1E17-1E18 atom/cm3；The AlaGaAs The thickness 1000-1500nm of lower limit layer, doping concentration are 4.0-6.0E17 atom/cm3；The InGaAs/AlbGaAs amount Sub- trap luminous zone with a thickness of 5-50nm；The AlcGaAs upper limiting layer with a thickness of 1000-3000nm, doping concentration is 1E17-1E18 atom/cm3；The AldGa1-dInP transition zone with a thickness of 200-500nm, doping concentration 5E17-1E20 A atom/cm3；The P-GaP current extending with a thickness of 2000-5000nm, doping concentration be 5E17-1E20 atom/ cm3。
It is further preferred that the GaAs buffer layer with a thickness of 300nm, doping concentration is 2-3E18 atom/cm3； The GaxIn1-xFor P corrosion barrier layer with a thickness of 400nm, doping concentration is 1E18 atom/cm3；The AlyGaAs Ohmic contact Layer with a thickness of 400nm, doping concentration is 1E18 atom/cm3；The N-AlzGaAs roughened layer with a thickness of 4000nm, mix Miscellaneous concentration is 5E17-2E18 atom/cm3；The AlaGaAs lower limit layer with a thickness of 1200nm, doping concentration is 5.0E17 a atom/cm3；The InGaAs/AlbGaAs quantum well radiation area with a thickness of 25nm；It is limited on the AlcGaAs Layer with a thickness of 1200nm, doping concentration is 4-6E17 atom/cm3；The AldGa1-dInP transition zone with a thickness of 300nm, doping concentration are 5E17-5E18 atom/cm3；The P-GaP current extending with a thickness of 3000nm, adulterate dense Degree is 1E18-3E19 atom/cm3。
The preparation method of the above-mentioned infrared flip LED epitaxial slice structure of GaAs base, including using MOCVD method in GaAs substrate Growing epitaxial layers, steps are as follows：
(1) keeping MOCVD device growth room temperature is 680-720 DEG C, is passed through TMGa and AsH3, give birth on gaas substrates Long GaAs buffer layer；
(2) MOCVD device growth room temperature is risen to 730-770 DEG C, continues to be passed through TMGa, TMIn and PH3, in GaAs Ga is grown on buffer layerxIn1-xP corrosion barrier layer；
(3) MOCVD device growth room temperature is down to 680-720 DEG C, closes TMIn and PH3, be passed through TMAl, TMGa and AsH3, in GaxIn1-xAlyGaAs ohmic contact layer is grown on P corrosion barrier layer；
(4) keeping MOCVD device growth room temperature is 680-720 DEG C, continues to be passed through TMAl, TMGa and AsH3, N-Al is grown on AlyGaAs ohmic contact layerzGaAs roughened layer；
(5) keeping MOCVD device growth room temperature is 680-720 DEG C, in N-AlzAl is grown on GaAs roughened layeraGaAs Lower limit layer；
(6) keeping MOCVD device growth room temperature is 680-720 DEG C, in AlaIt is grown on GaAs lower limit layer InGaAs/AlbGaAs quantum well radiation area；
(7) MOCVD device growth room temperature is down to 580-620 DEG C, adjustment V/III ratio is 40-60, in InGaAs/ AlbGaAs quantum well radiation grows Al in areacGaAs upper limiting layer；
(8) MOCVD device growth room temperature is down to 680-720 DEG C, closes AsH3, it is passed through TMGa, TMIn and PH3, AldGa1-dInP transition zone is grown on AlcGaAs upper limiting layer；
(9) keeping MOCVD device growth room temperature is 730-770 DEG C, in AldGa1-dP-GaP is grown on InP transition zone Current extending.
It is preferred according to the present invention, the GaAs buffer layer, the GaxIn1-xP corrosion barrier layer, the AlyGaAs ohm Contact layer, the N-AlzGaAs roughened layer, the AlaThe n-type doping source of GaAs lower limit layer is Si2H6；The AlxGa1-xInP The p-type doped source of transition zone and the P-GaP current extending is Cp2Mg。
It is preferred according to the present invention, before the step (1), execute following steps：GaAs substrate is placed on MOCVD device In growth room, H2Under the conditions of, MOCVD device is grown into indoor temperature and rises to 730-770 DEG C, 20-40min is toasted, is passed through AsH3, GaAs substrate surface water oxygen is removed, Surface heat-treatent is completed.
The above-mentioned pre-processing to GaAs substrate removes GaAs substrate surface water oxygen, improves into crystalloid amount.
It is preferred according to the present invention, the H2Flow be 8000-50000sccm；The purity of the TMGa is 99.9999%, the temperature of the thermostat of the TMGa is -15 DEG C of (- 5)；The purity of the TMIn is 99.9999%, described The temperature of the thermostat of TMIn is 15-20 DEG C；The purity of the TMAl is 99.9999%, the temperature of the thermostat of the TMAl It is 10-28 DEG C；The AsH3Purity be 99.9999%；The Si2H6Purity be 99.9999%；The Cp2The purity of Mg It is 99.9999%, the Cp2The temperature of the thermostat of Mg is 0-25 DEG C.
Beneficial effects of the present invention are：
1, the AlxGaAs material of p-type current expansion is oxidizable, and the AlxGaAs material of p-type current expansion is changed to by the present invention AlxGa1-xInP material transition and GaP material, external quantum efficiency compound by exciton and the non-interband of isoelectronic trap progress The problem of up to 2%-4%, reducing light absorption, improve light extraction efficiency, reducing element power loss.
2, the defects of p-type AlGaAs limiting layer of the present invention is adulterated instead of Mg using C auto-dope, reduces dislocation density, is improved Crystal quality.
Detailed description of the invention
Fig. 1 is the schematic diagram of the infrared flip LED epitaxial slice structure of GaAs base of the present invention；
1, GaAs buffer layer, 2, GaxIn1-xP corrosion barrier layer, 3, AlyGaAs ohmic contact layer, 4, N-AlzGaAs roughening Layer, 5, AlaGaAs lower limit layer, 6, InGaAs/AlbGaAs quantum well radiation area, 7, AlcGaAs upper limiting layer, 8, AldGa1- dInP transition zone, 9, P-GaP current extending.
Specific embodiment
The present invention is further qualified with embodiment with reference to the accompanying drawings of the specification, but not limited to this.
Embodiment 1
A kind of infrared flip LED epitaxial slice structure of GaAs base, as shown in Figure 1, by it is lower from it is upper successively include GaAs buffer layer 1、GaxIn1-xP corrosion barrier layer 2, AlyGaAs ohmic contact layer 3, N-AlzGaAs roughened layer 4, AlaGaAs lower limit layer 5, InGaAs/AlbGaAs quantum well radiation area 6, AlcGaAs upper limiting layer 7, AldGa1-dInP transition zone 8, P-GaP current extending 9；X is 0.3-0.5, y 0-0.3, z 0.1-0.3, a 0.3-0.5, b 0.3-0.5, c 0.3-0.5, d 0.1-0.3； The material of P-GaP current extending 9 is GaP；AlaGaAs lower limit layer 5 and AlcDoped with C, doping in GaAs upper limiting layer 7 Concentration is 4.0-6.0E17 atom/cm3。
The material of P-GaP current extending 9 is GaP, reduces light absorption, improves light extraction efficiency, reduces element power loss The problem of；AlaGaAs lower limit layer 5 and AlcDefect is reduced doped with C in GaAs upper limiting layer 7, is improved into crystalloid amount.
GaAs buffer layer 1 with a thickness of 200-500nm, doping concentration is 1E17-5E18 atom/cm3；GaxIn1-xP is rotten Lose barrier layer 2 with a thickness of 100-500nm, doping concentration is 1E17-5E18 atom/cm3；AlyGaAs ohmic contact layer 3 With a thickness of 100-300nm, doping concentration is 1E18-5E18 atom/cm3；N-AlzGaAs roughened layer 4 with a thickness of 3000- 10000nm, doping concentration are 1E17-1E18 atom/cm3；AlaThe thickness 1000-1500nm of GaAs lower limit layer 5 is adulterated dense Degree is 4.0-6.0E17 atom/cm3；InGaAs/AlbGaAs quantum well radiation area 6 with a thickness of 5-50nm；AlcThe GaAs upper limit Preparative layer 7 with a thickness of 1000-3000nm, doping concentration is 1E17-1E18 atom/cm3；AldGa1-dThe thickness of InP transition zone 8 For 200-500nm, doping concentration is 5E17-1E20 atom/cm3；P-GaP current extending 9 with a thickness of 2000- 5000nm, doping concentration are 5E17-1E20 atom/cm3。
Embodiment 2
According to a kind of infrared flip LED epitaxial slice structure of GaAs base described in embodiment 1, difference is, x=0.5；x =0.5；Y=0.3；Z=0.2；A=0.3；B=0.4；C=0.3；D=0.2.
GaAs buffer layer 1 with a thickness of 300nm, doping concentration is 2-3E18 atom/cm3；GaxIn1-xP corrosion barrier layer 2 with a thickness of 400nm, and doping concentration is 1E18 atom/cm3；AlyGaAs ohmic contact layer 3 with a thickness of 400nm, doping concentration For 1E18 atom/cm3；N-AlzGaAs roughened layer 4 with a thickness of 4000nm, doping concentration is 5E17-2E18 atom/cm3； AlaGaAs lower limit layer 5 with a thickness of 1200nm, doping concentration is 5.0E17 atom/cm3；InGaAs/AlbGaAs Quantum Well Luminous zone 6 with a thickness of 25nm；AlcGaAs upper limiting layer 7 with a thickness of 1200nm, doping concentration is 4-6E17 atom/cm3； AldGa1-dInP transition zone 8 with a thickness of 300nm, doping concentration is 5E17-5E18 atom/cm3；P-GaP current extending 9 With a thickness of 3000nm, doping concentration is 1E18-3E19 atom/cm3。
Embodiment 3
The preparation method of the infrared flip LED epitaxial slice structure of GaAs base described in embodiment 1 or 2, including use the side MOCVD Method grown epitaxial layer on gaas substrates, steps are as follows：
(1) keeping MOCVD device growth room temperature is 680-720 DEG C, is passed through TMGa and AsH3, give birth on gaas substrates Long GaAs buffer layer 1；
(2) MOCVD device growth room temperature is risen to 730-770 DEG C, continues to be passed through TMGa, TMIn and PH3, in GaAs Ga is grown on buffer layer 1xIn1-xP corrosion barrier layer 2；
(3) MOCVD device growth room temperature is down to 680-720 DEG C, closes TMIn and PH3, be passed through TMAl, TMGa and AsH3, in GaxIn1-xAl is grown on P corrosion barrier layer 2yGaAs ohmic contact layer 3；
(4) keeping MOCVD device growth room temperature is 680-720 DEG C, continues to be passed through TMAl, TMGa and AsH3, N-Al is grown on AlyGaAs ohmic contact layer 3zGaAs roughened layer 4；
(5) keeping MOCVD device growth room temperature is 680-720 DEG C, in N-AlzIt is grown on GaAs roughened layer 4 AlaGaAs lower limit layer 5；
(6) keeping MOCVD device growth room temperature is 680-720 DEG C, is grown on AlaGaAs lower limit layer 5 InGaAs/AlbGaAs quantum well radiation area 6；
(7) MOCVD device growth room temperature is down to 580-620 DEG C, adjustment V/III ratio is 40-60, in InGaAs/ AlbAl is grown in GaAs quantum well radiation area 6cGaAs upper limiting layer 7；
(8) MOCVD device growth room temperature is down to 680-720 DEG C, closes AsH3, it is passed through TMGa, TMIn and PH3, AldGa1-dInP transition zone 8 is grown on AlcGaAs upper limiting layer 7；
(9) keeping MOCVD device growth room temperature is 730-770 DEG C, in AldGa1-dP- is grown on InP transition zone 8 GaP current extending 9.
Embodiment 4
According to the preparation method of the infrared flip LED epitaxial slice structure of GaAs base described in embodiment 3, difference is,
GaAs buffer layer 1, GaxIn1-xP corrosion barrier layer 2, AlyGaAs ohmic contact layer 3, N-AlzGaAs roughened layer 4, AlaThe n-type doping source of GaAs lower limit layer 5 is Si2H6；AlxGa1-xThe p-type of InP transition zone 8 and P-GaP current extending 9 is mixed Miscellaneous source is Cp2Mg。
Embodiment 5
According to the preparation method of the infrared flip LED epitaxial slice structure of GaAs base described in embodiment 3, difference is,
Before step (1), following steps are executed：GaAs substrate is placed in MOCVD device growth room, H2Under the conditions of, it will MOCVD device grows indoor temperature and rises to 730-770 DEG C, toasts 20-40min, is passed through AsH3, remove GaAs substrate surface water Oxygen completes Surface heat-treatent.
The above-mentioned pre-processing to GaAs substrate removes GaAs substrate surface water oxygen, improves into crystalloid amount.
Embodiment 6
According to the preparation method of the infrared flip LED epitaxial slice structure of GaAs base described in embodiment 3, difference is, H2 Flow be 8000-50000sccm；The purity of TMGa is that the temperature of the thermostat of 99.9999%, TMGa is -15 DEG C of (- 5)； The purity of TMIn is that the temperature of the thermostat of 99.9999%, TMIn is 15-20 DEG C；The purity of TMAl is 99.9999%, TMAl Thermostat temperature be 10-28 DEG C；AsH3Purity be 99.9999%；Si2H6Purity be 99.9999%；Cp2Mg's is pure Degree is 99.9999%, Cp2The temperature of the thermostat of Mg is 0-25 DEG C.
Comparative example 1
According to a kind of infrared flip LED epitaxial slice structure of GaAs base as described in example 2, difference is,
The material of P-GaP current extending 9 is AlxGaAs；
Outside the infrared flip LED of GaAs base in embodiment 3 in the infrared flip LED epitaxial slice structure of GaAs base and the comparative example Prolong chip architecture to compare, light extraction efficiency, element power consume are as shown in table 1：
Table 1
As shown in Table 1, the material of p-type current extending 9 is changed to the low AlxGa1-xInP material mistake of resistivity by the present invention Cross and GaP material, GaP be it is indirectly compound, carry out that non-interband is compound, and external quantum efficiency is reachable by exciton and isoelectronic trap The problem of 2%-4% reduces light absorption, improves light extraction efficiency, reduces element power loss.

Claims (8)

1. a kind of infrared flip LED epitaxial slice structure of GaAs base, which is characterized in that by it is lower from it is upper successively include GaAs buffer layer, GaxIn1-xP corrosion barrier layer, AlyGaAs ohmic contact layer, N-AlzGaAs roughened layer, AlaGaAs lower limit layer, InGaAs/ AlbGaAs quantum well radiation area, AlcGaAs upper limiting layer, AldGa1-dInP transition zone, P-GaP current extending；X is 0.3- 0.5, y 0-0.3, z 0.1-0.3, a 0.3-0.5, b 0.3-0.5, c 0.3-0.5, d 0.1-0.3；The P-GaP The material of current extending is GaP；The AlaGaAs lower limit layer and the AlcDoped with C, doping in GaAs upper limiting layer Concentration is 4.0-6.0E17 atom/cm3。
2. the infrared flip LED epitaxial slice structure of a kind of GaAs base according to claim 1, which is characterized in that x=0.5；y =0.3；Z=0.2；A=0.3；B=0.4；C=0.3；D=0.2.
3. the infrared flip LED epitaxial slice structure of a kind of GaAs base according to claim 1, which is characterized in that the GaAs Buffer layer with a thickness of 200-500nm, doping concentration is 1E17-5E18 atom/cm3；The GaxIn1-xP corrosion barrier layer With a thickness of 100-500nm, doping concentration is 1E17-5E18 atom/cm3；The AlyGaAs ohmic contact layer with a thickness of 100-300nm, doping concentration are 1E18-5E18 atom/cm3；The N-AlzGaAs roughened layer with a thickness of 3000- 10000nm, doping concentration are 1E17-1E18 atom/cm3；The AlaThe thickness 1000-1500nm of GaAs lower limit layer, mixes Miscellaneous concentration is 4.0-6.0E17 atom/cm3；The InGaAs/AlbGaAs quantum well radiation area with a thickness of 5-50nm；It is described AlcGaAs upper limiting layer with a thickness of 1000-3000nm, doping concentration is 1E17-1E18 atom/cm3；The AldGa1- dInP transition zone with a thickness of 200-500nm, doping concentration is 5E17-1E20 atom/cm3；The P-GaP current extending With a thickness of 2000-5000nm, doping concentration is 5E17-1E20 atom/cm3。
4. the infrared flip LED epitaxial slice structure of a kind of GaAs base according to claim 1, which is characterized in that the GaAs Buffer layer with a thickness of 300nm, doping concentration is 2-3E18 atom/cm3；The GaxIn1-xP corrosion barrier layer with a thickness of 400nm, doping concentration are 1E18 atom/cm3；The AlyGaAs ohmic contact layer with a thickness of 400nm, doping concentration is 1E18 atom/cm3；The N-AlzGaAs roughened layer with a thickness of 4000nm, doping concentration be 5E17-2E18 atom/ cm3；The AlaGaAs lower limit layer with a thickness of 1200nm, doping concentration is 5.0E17 atom/cm3；The InGaAs/ AlbGaAs quantum well radiation area with a thickness of 25nm；The AlcGaAs upper limiting layer with a thickness of 1200nm, doping concentration is 4-6E17 atom/cm3；The AldGa1-dInP transition zone with a thickness of 300nm, doping concentration be 5E17-5E18 atom/ cm3；The P-GaP current extending with a thickness of 3000nm, doping concentration is 1E18-3E19 atom/cm3。
5. a kind of preparation method of any infrared flip LED epitaxial slice structure of GaAs base of embodiment 1-4, feature exist In, including MOCVD method grown epitaxial layer on gaas substrates is used, steps are as follows：
(1) keeping MOCVD device growth room temperature is 680-720 DEG C, is passed through TMGa and AsH3, grow on gaas substrates GaAs buffer layer；
(2) MOCVD device growth room temperature is risen to 730-770 DEG C, continues to be passed through TMGa, TMIn and PH3, buffered in GaAs Ga is grown on layerxIn1-xP corrosion barrier layer；
(3) MOCVD device growth room temperature is down to 680-720 DEG C, closes TMIn and PH3, it is passed through TMAl, TMGa and AsH3, In GaxIn1-xAl is grown on P corrosion barrier layeryGaAs ohmic contact layer；
(4) keeping MOCVD device growth room temperature is 680-720 DEG C, continues to be passed through TMAl, TMGa and AsH3, in AlyGaAs N-Al is grown on ohmic contact layerzGaAs roughened layer；
(5) keeping MOCVD device growth room temperature is 680-720 DEG C, in N-AlzAl is grown on GaAs roughened layeraGaAs lower limit Preparative layer；
(6) keeping MOCVD device growth room temperature is 680-720 DEG C, in AlaInGaAs/ is grown on GaAs lower limit layer AlbGaAs quantum well radiation area；
(7) MOCVD device growth room temperature is down to 580-620 DEG C, adjustment V/III ratio is 40-60, in InGaAs/ AlbGaAs quantum well radiation grows Al in areacGaAs upper limiting layer；
(8) MOCVD device growth room temperature is down to 680-720 DEG C, closes AsH3, it is passed through TMGa, TMIn and PH3, AldGa1-dInP transition zone is grown on AlcGaAs upper limiting layer；
(9) keeping MOCVD device growth room temperature is 730-770 DEG C, in AldGa1-dP-GaP electric current is grown on InP transition zone Extension layer.
6. the preparation method of the infrared flip LED epitaxial slice structure of GaAs base according to claim 5, which is characterized in that institute State GaAs buffer layer, the GaxIn1-xP corrosion barrier layer, the AlyGaAs ohmic contact layer, the N-AlzGaAs roughened layer, The AlaThe n-type doping source of GaAs lower limit layer is Si2H6；The AlxGa1-xInP transition zone and the P-GaP current expansion The p-type doped source of layer is Cp2Mg。
7. the preparation method of the infrared flip LED epitaxial slice structure of GaAs base according to claim 5, which is characterized in that institute Before stating step (1), following steps are executed：GaAs substrate is placed in MOCVD device growth room, H2Under the conditions of, MOCVD is set The standby indoor temperature of growth rises to 730-770 DEG C, toasts 20-40min, is passed through AsH3, GaAs substrate surface water oxygen is removed, is completed Surface heat-treatent.
8. the preparation method of the infrared flip LED epitaxial slice structure of GaAs base according to claim 5, which is characterized in that institute State H2Flow be 8000-50000sccm；The purity of the TMGa is 99.9999%, the temperature of the thermostat of the TMGa For -15 DEG C of (- 5)；The purity of the TMIn is 99.9999%, and the temperature of the thermostat of the TMIn is 15-20 DEG C；It is described The purity of TMAl is 99.9999%, and the temperature of the thermostat of the TMAl is 10-28 DEG C；The AsH3Purity be 99.9999%；The Si2H6Purity be 99.9999%；The Cp2The purity of Mg is 99.9999%, the Cp2The perseverance of Mg The temperature of warm slot is 0-25 DEG C.
CN201810676839.5A 2018-06-27 2018-06-27 A kind of infrared flip LED epitaxial slice structure of GaAs base and preparation method thereof Active CN108878601B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810676839.5A CN108878601B (en) 2018-06-27 2018-06-27 A kind of infrared flip LED epitaxial slice structure of GaAs base and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201810676839.5A CN108878601B (en) 2018-06-27 2018-06-27 A kind of infrared flip LED epitaxial slice structure of GaAs base and preparation method thereof

Publications (2)

Publication Number Publication Date
CN108878601A true CN108878601A (en) 2018-11-23
CN108878601B CN108878601B (en) 2019-10-25

Family

ID=64295224

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810676839.5A Active CN108878601B (en) 2018-06-27 2018-06-27 A kind of infrared flip LED epitaxial slice structure of GaAs base and preparation method thereof

Country Status (1)

Country Link
CN (1) CN108878601B (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110071210A (en) * 2019-04-15 2019-07-30 深圳先进技术研究院 Infrared LED device and preparation method thereof
CN110379898A (en) * 2019-05-22 2019-10-25 华灿光电(苏州）有限公司 LED epitaxial slice and its growing method
CN113224214A (en) * 2021-03-24 2021-08-06 华灿光电(苏州）有限公司 Red light emitting diode epitaxial wafer and preparation method thereof
CN114069388A (en) * 2020-08-07 2022-02-18 山东华光光电子股份有限公司 Small-power AlGaInP red light semiconductor laser based on GaAsP interface transition layer and preparation method thereof
CN114335276A (en) * 2022-03-10 2022-04-12 南昌凯捷半导体科技有限公司 940nm reverse polarity infrared LED epitaxial wafer and preparation method thereof
CN115602769A (en) * 2022-12-16 2023-01-13 南昌凯捷半导体科技有限公司（Cn） Reverse-polarity infrared LED epitaxial wafer with light filtering structure and preparation method thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102097424A (en) * 2009-12-10 2011-06-15 Lg伊诺特有限公司 Light-emitting device
CN102208508A (en) * 2010-03-30 2011-10-05 厦门乾照光电股份有限公司 Light emitting diode structure and manufacturing method thereof
CN103022892A (en) * 2012-12-14 2013-04-03 武汉电信器件有限公司 Structure and manufacture method of high power laser chip with wavelength of 808nm
CN103715324A (en) * 2014-01-02 2014-04-09 厦门乾照光电股份有限公司 Light-emitting diode of novel structure and manufacturing method thereof
CN107316931A (en) * 2017-07-06 2017-11-03 山东浪潮华光光电子股份有限公司 The flip LED epitaxial wafer and its manufacture method of a kind of GaAs bases roughening Rotating fields
CN108091742A (en) * 2016-11-22 2018-05-29 山东浪潮华光光电子股份有限公司 A kind of the green-yellow light LED and its manufacturing method of GaAs bases improvement window layer structure

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102097424A (en) * 2009-12-10 2011-06-15 Lg伊诺特有限公司 Light-emitting device
CN102208508A (en) * 2010-03-30 2011-10-05 厦门乾照光电股份有限公司 Light emitting diode structure and manufacturing method thereof
CN103022892A (en) * 2012-12-14 2013-04-03 武汉电信器件有限公司 Structure and manufacture method of high power laser chip with wavelength of 808nm
CN103715324A (en) * 2014-01-02 2014-04-09 厦门乾照光电股份有限公司 Light-emitting diode of novel structure and manufacturing method thereof
CN108091742A (en) * 2016-11-22 2018-05-29 山东浪潮华光光电子股份有限公司 A kind of the green-yellow light LED and its manufacturing method of GaAs bases improvement window layer structure
CN107316931A (en) * 2017-07-06 2017-11-03 山东浪潮华光光电子股份有限公司 The flip LED epitaxial wafer and its manufacture method of a kind of GaAs bases roughening Rotating fields

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110071210A (en) * 2019-04-15 2019-07-30 深圳先进技术研究院 Infrared LED device and preparation method thereof
CN110071210B (en) * 2019-04-15 2020-10-23 深圳先进技术研究院 Infrared LED device and preparation method thereof
CN110379898A (en) * 2019-05-22 2019-10-25 华灿光电(苏州）有限公司 LED epitaxial slice and its growing method
CN114069388A (en) * 2020-08-07 2022-02-18 山东华光光电子股份有限公司 Small-power AlGaInP red light semiconductor laser based on GaAsP interface transition layer and preparation method thereof
CN114069388B (en) * 2020-08-07 2024-02-06 山东华光光电子股份有限公司 Low-power AlGaInP red light semiconductor laser based on GaAsP interface transition layer and preparation method thereof
CN113224214A (en) * 2021-03-24 2021-08-06 华灿光电(苏州）有限公司 Red light emitting diode epitaxial wafer and preparation method thereof
CN113224214B (en) * 2021-03-24 2022-05-13 华灿光电(苏州）有限公司 Red light emitting diode epitaxial wafer and preparation method thereof
CN114335276A (en) * 2022-03-10 2022-04-12 南昌凯捷半导体科技有限公司 940nm reverse polarity infrared LED epitaxial wafer and preparation method thereof
CN114335276B (en) * 2022-03-10 2022-05-27 南昌凯捷半导体科技有限公司 940nm reverse polarity infrared LED epitaxial wafer and preparation method thereof
CN115602769A (en) * 2022-12-16 2023-01-13 南昌凯捷半导体科技有限公司（Cn） Reverse-polarity infrared LED epitaxial wafer with light filtering structure and preparation method thereof
CN115602769B (en) * 2022-12-16 2023-03-24 南昌凯捷半导体科技有限公司 Reverse-polarity infrared LED epitaxial wafer with light filtering structure and preparation method thereof

Also Published As

Publication number Publication date
CN108878601B (en) 2019-10-25

Similar Documents

Publication Publication Date Title
CN108878601B (en) A kind of infrared flip LED epitaxial slice structure of GaAs base and preparation method thereof
CN104393124B (en) A kind of preparation method of LED epitaxial slice structure
TWI500072B (en) Manufacturing method for light emitting element
US5693963A (en) Compound semiconductor device with nitride
KR100663745B1 (en) Super Bright Light Emitting Diode of Nanorod Array Structure Having InGaN Quantum Well and Method for Manufacturing the Same
US7547910B2 (en) Semiconductor light-emitting device and method of manufacturing semiconductor light-emitting device
CN104409587B (en) A kind of InGaN base blue-green light LED epitaxial structure and growing method
CN105990479A (en) GaN-based light emitting diode epitaxial structure and manufacturing method thereof
WO2017202328A1 (en) Gallium nitride-based light emitting diode and preparation method therefor
CN105206726A (en) LED structure and growth method thereof
CN104733579A (en) Semiconductor light-emitting device and manufacturing method thereof
CN104319317B (en) Epitaxial production method capable of effectively improving P-GaN hole injection layer quality
CN116454186A (en) Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode
CN209104183U (en) A kind of high performance green diode multi-quantum pit structure
CN114388664A (en) Growth method for improving photoelectric conversion efficiency of GaN-based light-emitting device
CN109473516A (en) A kind of gallium nitride based LED epitaxial slice and its growing method
CN108808446A (en) A kind of the GaN base laser epitaxial structure and its growing method of the structure that fractures with dislocation
JP4781028B2 (en) Group III nitride semiconductor laminate and method for manufacturing group III nitride semiconductor light emitting device
CN105140360B (en) A kind of iii-nitride light emitting devices and preparation method thereof
KR101201641B1 (en) Transparent thin film, light emitting device comprising the same, and methods for preparing the same
CN115498083A (en) Light emitting diode epitaxial structure and light emitting diode
CN116598396A (en) LED epitaxial wafer, preparation method thereof and LED
CN206322727U (en) A kind of GaAs bases improve the green-yellow light LED of window layer structure
CN105489725B (en) A kind of LED chip structure and production method
CN108550674A (en) A kind of light emitting diode and preparation method thereof enhancing hole injection

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20200922

Address after: Tianchen Avenue high tech Zone of Ji'nan City, Shandong Province, No. 1835 250101

Patentee after: SHANDONG HUAGUANG OPTOELECTRONICS Co.,Ltd.

Address before: 261061 No. 9, Golden Road, hi tech Zone, Shandong, Weifang

Patentee before: SHANDONG INSPUR HUAGUANG OPTOELECTRONICS Co.,Ltd.

TR01 Transfer of patent right