CN109524520A - A kind of high performance green diode multi-quantum pit structure and preparation method thereof - Google Patents

A kind of high performance green diode multi-quantum pit structure and preparation method thereof Download PDF

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CN109524520A
CN109524520A CN201811621402.8A CN201811621402A CN109524520A CN 109524520 A CN109524520 A CN 109524520A CN 201811621402 A CN201811621402 A CN 201811621402A CN 109524520 A CN109524520 A CN 109524520A
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growth
barrier layer
gan barrier
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sih
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CN109524520B (en
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董海亮
许并社
贾伟
张爱琴
屈凯
李天保
梁建
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Taiyuan University of Technology
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

A kind of high performance green diode multi-quantum pit structure of the present invention and preparation method thereof, belongs to technical field of semiconductor；The technical problem to be solved is that provide the multi-quantum pit structure of potential barrier inside gradient silicon doping and preparation method thereof that a kind of crystal quality is good, Carrier recombination probability is big, quantum luminous efficiency is high；Technical solution are as follows: its structure along the direction of growth successively are as follows: the structural unit that the GaN barrier layer and multiple groups of the first Si gradient doping are sequentially stacked, single group structural unit is made of along the direction of growth the GaN barrier layer of the fixed InGaN quantum well layer of an In component and a Si gradient doping, the doping concentration of Si is along direction of growth linear decrease in the GaN barrier layer of first Si gradient doping, in the GaN barrier layer of Si gradient doping in single group structural unit, the doping concentration of Si is along direction of growth linear decrease.

Description

A kind of high performance green diode multi-quantum pit structure and preparation method thereof
Technical field
A kind of high performance green diode multi-quantum pit structure of the present invention and preparation method thereof, belongs to semiconductor material skill Art field.
Background technique
In component can generate very big piezoelectric polarization effect up to 30% or so in Quantum Well in InGaN green light LED.At present Conventional method has barrier layer to mix silicon or be that barrier layer gradient mixes silicon (building upward doping concentration from bottom first to gradually decrease), this A little methods can also improve the polarity effect of Quantum Well to a certain extent, reduce the operating voltage of green light LED.But to reduction quantum The effect of trap/base interface dislocation density is not obvious in trap, and the recombination probability of multiple quantum wells carrier is low, and luminous efficiency is not Height, the excessively high poor crystal quality that will lead to barrier layer of the doping concentration of barrier layer.
Summary of the invention
A kind of high performance green diode multi-quantum pit structure of the present invention and preparation method thereof, overcomes the prior art and deposits Deficiency, provide the potential barrier inside gradient silicon that a kind of crystal quality is good, Carrier recombination probability is big, quantum luminous efficiency is high and mix Miscellaneous multi-quantum pit structure and preparation method thereof.
In order to solve the above-mentioned technical problem, the technical solution adopted by the present invention are as follows: a kind of high performance green diode is more Quantum well structure, structure along the direction of growth successively are as follows: the structure that the GaN barrier layer and multiple groups of the first Si gradient doping are sequentially stacked Unit, single group structural unit is along the direction of growth by the fixed InGaN quantum well layer of In component and Si gradient doping GaN barrier layer forms, and the doping concentration of Si is along direction of growth linear decrease, single group structure in the GaN barrier layer of the first Si gradient doping In the GaN barrier layer of Si gradient doping in unit, the doping concentration of Si is along direction of growth linear decrease.
Further, the doping concentration of Si is along the direction of growth in the GaN barrier layer of the first Si gradient doping, from 1 × 1019 cm-3Linear decrease is to 1 × 1017 cm-3。
Further, the GaN barrier layer of the first Si gradient doping with a thickness of 50nm.
Further, the quantity of the structural unit is 3-10 group.
Further, the fixed InGaN quantum well layer of the In component with a thickness of 4nm.
Further, the GaN barrier layer of the Si gradient doping in the structural unit, the initial dopant concentration of Si is along growth side To from 5 × 1018 cm-3Linear decrease is to 1 × 1016 cm-3, the end doping concentration of Si is along the direction of growth, from 1 × 1017 cm-3 Linear decrease is to 1 × 1016 cm-3。
A kind of preparation method of above-mentioned high performance green diode multi-quantum pit structure, comprising the following steps:
S1. use triethyl-gallium for gallium source, NH3For nitrogen source, N2For carrier gas, SiH4As doped source, growth temperature is 840 DEG C, The SiH when starting to grow GaN barrier layer4Flow is 200 sccm, and doping concentration is 1 × 1019 cm-3, when terminating the growth of GaN barrier layer SiH4Flow is 5 sccm, and doping concentration is 1 × 1017 cm-3, linear gradual change, growth time is 1000 s, chamber pressure It is 400 mbar to get the GaN barrier layer for the first Si gradient doping for being 50 nm to growth thickness；
S2. using triethyl-gallium as gallium source, TMln is indium source, NH3For nitrogen source, N2It is 740 DEG C, reaction chamber in temperature for carrier gas Pressure is 400 mbar, and growth time is 300 s, that is, is obtaining the In component in the structural unit that growth thickness is 4 nm Fixed InGaN quantum well layer；
S3. use triethyl-gallium for gallium source, NH3For nitrogen source, N2For carrier gas, SiH4As doped source, growth temperature is 840 DEG C, The SiH when starting to grow GaN barrier layer4Flow is 150 sccm, and doping concentration is 5 × 1018 cm-3, when terminating the growth of GaN barrier layer SiH4Flow is 5 sccm, and doping concentration is 1 × 1017 cm-3, linear gradual change, growth time be 350 s to get arrive the knot The GaN barrier layer of Si gradient doping in structure unit；
S4. the operation of step S2 is repeated；
S5. use triethyl-gallium for gallium source, NH3For nitrogen source, N2For carrier gas, SiH4As doped source, growth temperature is 840 DEG C, The SiH when starting to grow GaN barrier layer4SiH of the flow compared to the GaN barrier layer of last growth4Flow successively decreases, minimum SiH4Flow For 5 sccm, initial dopant concentration compares the initial dopant concentration linear decrease of the GaN barrier layer of last growth, and minimum doping is dense Degree is 1 × 1016 cm-3, terminate SiH when the growth of GaN barrier layer4Flow is 5 sccm, terminates doping concentration compared to last growth The initial dopant concentration linear decrease of GaN barrier layer, minimum doping concentration are 1 × 1016 cm-3, growth time is 350 s；
S6. step S4 and S5, the continued growth 2-9 group structural unit are repeated.
The present invention has the advantages that compared with prior art.
The present invention can not only reduce the polarity effect of quantum well region using the structure of potential barrier inside gradient silicon doping, additionally it is possible to drop Low trap builds the dislocation density at interface.After the complete InGaN well layer of length, continued growth GaN barrier layer has a large amount of dislocation and climbs upwards, At this moment start first to use the silicon of high concentration to adulterate when growing barrier layer, Si atom can change position in conjunction with the scission of link of dislocation line attachment The direction of wrong line, to inhibit dislocation line to climb upwards, to reduce dislocation density.With the increase of barrier layer thickness, dislocation Density can gradually decrease, and at this moment can reduce doping concentration and crystal quality is avoided to deteriorate.Using same method, with barrier layer number The increase of amount, the silicon concentration that barrier layer starts growth can gradually decrease.The method of barrier layer inside gradient not only reduces the pole in Quantum Well Change effect, and the crystal quality of Quantum Well can also be improved, to realize the purpose for improving internal quantum efficiency.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of high performance green diode provided in an embodiment of the present invention.
Fig. 2 is a kind of high performance green diode multi-quantum pit structure schematic diagram figure provided by the invention.
In figure, 1- substrate, 2-GaN nucleating layer, 3- high temperature is u-GaN layers undoped, the n-GaN layer of 4-Si doping, and 5- is more The GaN of quantum well structure, 6-p-InAIGaN electronic barrier layer, the p-GaN layer of 7-Mg doping, the first Si gradient doping of 51- is built Layer, 52- structural unit, the fixed InGaN quantum well layer of 521-In component, the GaN barrier layer of 522-Si gradient doping.
Specific embodiment
Following further describes the present invention with reference to the drawings.
As shown in Figure 1, the present invention provides a kind of embodiment of high performance green diode multi-quantum pit structure, structure Successively along the direction of growth are as follows: the structural unit 52 that the GaN barrier layer 51 and 3 of the first Si gradient doping is sequentially stacked, single group structure Unit 52 is along the direction of growth by the GaN barrier layer of an In component fixed InGaN quantum well layer 521 and a Si gradient doping 522 form, and the doping concentration of Si is along direction of growth linear decrease, single group structure list in the GaN barrier layer 51 of the first Si gradient doping In the GaN barrier layer 522 of Si gradient doping in member 52, the doping concentration of Si is along direction of growth linear decrease.
The doping concentration of Si is along the direction of growth in the GaN barrier layer 51 of first Si gradient doping, from 1 × 1019 cm-3Linearly pass Reduce to 1 × 1017 cm-3.The GaN barrier layer 51 of first Si gradient doping with a thickness of 50nm.The fixed InGaN Quantum Well of In component Layer 521 with a thickness of 4nm.
The GaN barrier layer 522 of Si gradient doping in structural unit 52, the initial dopant concentration of Si along the direction of growth, from 5 × 1018 cm-3Linear decrease is to 1 × 1016 cm-3, the end doping concentration of Si is along the direction of growth, from 1 × 1017 cm-3Linear decrease To 1 × 1016 cm-3。
The present invention provides a kind of preparation method of above-mentioned high performance green diode multi-quantum pit structure, including following Step:
S1. use triethyl-gallium for gallium source, NH3For nitrogen source, N2For carrier gas, SiH4As doped source, growth temperature is 840 DEG C, The SiH when starting to grow GaN barrier layer4Flow is 200 sccm, and doping concentration is 1 × 1019 cm-3, when terminating the growth of GaN barrier layer SiH4Flow is 5 sccm, and doping concentration is 1 × 1017 cm-3, linear gradual change, growth time is 1000 s, chamber pressure It is 400 mbar to get to the GaN barrier layer 51 for the first Si gradient doping of gradient doping that growth thickness is 50 nm；
S2. using triethyl-gallium as gallium source, TMln is indium source, NH3For nitrogen source, N2It is 740 DEG C, reaction chamber in temperature for carrier gas Pressure is 400 mbar, and growth time is 300 s, i.e., in obtaining the gradient doping structural unit 52 that growth thickness is 4 nm The fixed InGaN quantum well layer 521 of In component；
S3. use triethyl-gallium for gallium source, NH3For nitrogen source, N2For carrier gas, SiH4As doped source, growth temperature is 840 DEG C, The SiH when starting to grow GaN barrier layer4Flow is 150 sccm, and doping concentration is 5 × 1018 cm-3, when terminating the growth of GaN barrier layer SiH4Flow is 5 sccm, and doping concentration is 1 × 1017 cm-3, linear gradual change, growth time is that 350 s mix to get to gradual change The GaN barrier layer 522 of Si gradient doping in miscellaneous structural unit 52；
S4. the operation of step S2 is repeated；
S5. use triethyl-gallium for gallium source, NH3For nitrogen source, N2For carrier gas, SiH4As doped source, growth temperature is 840 DEG C, The SiH when starting to grow GaN barrier layer4SiH of the flow compared to the GaN barrier layer of last growth4Flow successively decreases, minimum SiH4Flow For 5 sccm, initial dopant concentration compares the initial dopant concentration linear decrease of the GaN barrier layer of last growth, and minimum doping is dense Degree is 1 × 1016 cm-3, terminate SiH when the growth of GaN barrier layer4Flow is 5 sccm, terminates doping concentration compared to last growth The initial dopant concentration linear decrease of GaN barrier layer, minimum doping concentration are 1 × 1016 cm-3, growth time is 350 s；
S6. step S4 and S5, the structural unit 52 of 2 gradient dopings of continued growth are repeated.
As shown in Fig. 2, the present invention also provides a kind of structure of high performance green diode, structure along the direction of growth successively N-GaN layer 4, the above-mentioned multiple quantum wells knot adulterated for substrate 1, GaN nucleating layer 2, the undoped u-GaN layer 3 of high temperature, Si Structure 5, the p-GaN layer 7 of p-InAIGaN electronic barrier layer 6 and Mg doping.The present invention also provides a kind of high performance two poles of green light The preparation method of pipe, step includes the steps that the preparation method of above-mentioned multi-quantum pit structure 5, further comprising the steps of:
(1) graphical sapphire substrate surface high-temp cleaning treatment: at a temperature of 1070 DEG C, H2300 s of reduction treatment in atmosphere , nitrogen treatment then is carried out to its surface；
(2) using trimethyl gallium as gallium source, NH3As nitrogen source, H2As carrier gas, growth temperature is 550 DEG C, and the time is 150 s, chamber pressure are 600 mbar, and annealing temperature is 1040 DEG C, and the time is 200 s, i.e., serve as a contrast in graphic sapphire Growth thickness is the GaN nucleating layer 2 of 25 nm on bottom；
(3) using trimethyl gallium as gallium source, NH3As nitrogen source, H2As carrier gas, growth temperature is 1060 DEG C, when growth Between be 3600 s, chamber pressure be 600 mbar, i.e., it is undoped with a thickness of 2 μm of high temperature in the autochthonal length of GaN nucleating layer 2 U-GaN layer 3.
(4) using trimethyl gallium as gallium source, SiH4As silicon source, NH3As nitrogen source, H2As carrier gas, growth temperature Degree is 1065 DEG C, and growth time is 1800 s, and chamber pressure is 600 mbar, i.e., in the undoped u-GaN layer 3 of high temperature The n-GaN layer 4 that the Si that upper growth thickness is 1 μm is adulterated.
(5) use trimethyl gallium for gallium source, trimethyl aluminium is silicon source, and trimethyl indium is indium source, and two luxuriant magnesium are magnesium source, to more The GaN barrier layer of 5 top layer of quantum well structure realizes p-type doping, NH3As nitrogen source, N2For carrier gas, growth temperature is 920 DEG C, raw It is for a long time 300 s, reaction pressure is 200 mbar, i.e., with a thickness of the p-InAIGaN electronic barrier layer 6 of 50 nm.
(6) use trimethyl gallium for gallium source, two luxuriant magnesium are magnesium source, NH3As nitrogen source, nitrogen is carrier gas, and growth temperature is 960 DEG C, growth time 3000s, chamber pressure is 200 mbar, i.e., grows on p-InAIGaN electronic barrier layer 6 thick Degree be 250nm Mg adulterate p-GaN layer 7, later 650 DEG C at a temperature of, N2Anneal 900 s in atmosphere, is then down to Room temperature is to get the green diode structure for arriving the InGaN based multiple quantum well that potential barrier inside gradient adulterates.
The principal element for influencing GaN base green diode internal quantum efficiency has piezoelectric polarization effect and trap to build interface quality. Firstly, since there are polarity effects in InGaN Quantum Well, especially in the green light band of high In ingredient, the polarized electric field of generation is led Band curvature in multiple quantum wells is caused, conduction band is lower in p type side, and N-shaped side is elevated, so that the band edge of multiple quantum wells is by side Shape changes into triangle, and the base band energy of conduction band reduces, and the base band energy of valence band increases, and becomes gap width between the two It is narrow, lead to emission wavelength red shift, further influences luminous efficiency.Meanwhile the inclination of energy band can also make carrier easily cross potential barrier, Lead to the leakage of carrier.Therefore, InGaN green quantum trap polarity effect influence green diode photoelectric properties it is main because One of element.Secondly, the interface quality that trap is built in Quantum Well also drastically influences the raising of internal quantum efficiency.High In ingredient is grown When InGaN well layer, trap barrier material there are biggish lattice mismatch, can trap/base interface can generate it is a large amount of monatomic or Polyatom edge dislocation, so that the transport capability of electronics is reduced, thus will increase quantum well region non-radiative recombination probability, thus Reduce internal quantum efficiency.Grow GaN barrier layer using silicon atom doping, dislocation line can be made to bend, thus inhibit dislocation line after It is continuous to climb upwards, improve the crystal quality that trap builds interface.
The present invention is using potential barrier inside gradient doped with being conducive to reduce the polarity effect of Quantum Well, silicon grade doping energy in barrier layer The dislocation density in Quantum Well is reduced, so that the internal quantum efficiency of green diode Quantum Well is greatly improved, meanwhile, it also reduces and carries The leakage for flowing son, to improve the photoelectric properties of green diode.
Although being particularly shown and describing the present invention, those skilled in the art referring to its exemplary embodiment It should be understood that in the case where not departing from the spirit and scope of the present invention defined by claim form can be carried out to it With the various changes in details.

Claims (7)

1. a kind of high performance green diode multi-quantum pit structure, it is characterised in that: its structure along the direction of growth successively are as follows: The structural unit (52) that the GaN barrier layer (51) and multiple groups of one Si gradient doping are sequentially stacked, single group structural unit (52) is along growth Direction is made of the GaN barrier layer (522) of the fixed InGaN quantum well layer (521) of an In component and a Si gradient doping, the The doping concentration of Si is along direction of growth linear decrease, single group structural unit (52) in the GaN barrier layer (51) of one Si gradient doping Si gradient doping GaN barrier layer (522) in, the doping concentration of Si is along direction of growth linear decrease.
2. a kind of high performance green diode multi-quantum pit structure according to claim 1, it is characterised in that: described The doping concentration of Si is along the direction of growth in the GaN barrier layer (51) of one Si gradient doping, from 1 × 1019 cm-3Linear decrease to 1 × 1017 cm-3。
3. a kind of high performance green diode multi-quantum pit structure according to claim 1, it is characterised in that: described The GaN barrier layer (51) of one Si gradient doping with a thickness of 50nm.
4. a kind of high performance green diode multi-quantum pit structure according to claim 1, it is characterised in that: the knot The quantity of structure unit (52) is 3-10 group.
5. a kind of high performance green diode multi-quantum pit structure according to claim 1, it is characterised in that: the In The fixed InGaN quantum well layer (521) of component with a thickness of 4nm.
6. a kind of high performance green diode multi-quantum pit structure according to claim 1, it is characterised in that: the knot The GaN barrier layer (522) of Si gradient doping in structure unit (52), the initial dopant concentration of Si is along the direction of growth, from 5 × 1018 cm-3Linear decrease is to 1 × 1016 cm-3, the end doping concentration of Si is along the direction of growth, from 1 × 1017 cm-3Linear decrease to 1 × 1016 cm-3。
7. the preparation method of -6 any a kind of high performance green diode multi-quantum pit structures according to claim 1, Characterized by the following steps:
S1. use triethyl-gallium for gallium source, NH3For nitrogen source, N2For carrier gas, SiH4As doped source, growth temperature is 840 DEG C, The SiH when starting to grow GaN barrier layer4Flow is 200 sccm, and doping concentration is 1 × 1019 cm-3, when terminating the growth of GaN barrier layer SiH4Flow is 5 sccm, and doping concentration is 1 × 1017 cm-3, linear gradual change, growth time is 1000 s, chamber pressure It is 400 mbar to get the GaN barrier layer (51) for the first Si gradient doping for being 50 nm to growth thickness；
S2. using triethyl-gallium as gallium source, TMln is indium source, NH3For nitrogen source, N2It is 740 DEG C, reaction chamber in temperature for carrier gas Pressure is 400 mbar, and growth time is 300 s, that is, is obtaining the In in the structural unit (52) that growth thickness is 4 nm The fixed InGaN quantum well layer (521) of component；
S3. use triethyl-gallium for gallium source, NH3For nitrogen source, N2For carrier gas, SiH4As doped source, growth temperature is 840 DEG C, The SiH when starting to grow GaN barrier layer4Flow is 150 sccm, and doping concentration is 5 × 1018 cm-3, when terminating the growth of GaN barrier layer SiH4Flow is 5 sccm, and doping concentration is 1 × 1017 cm-3, linear gradual change, growth time be 350 s to get arrive the knot The GaN barrier layer (522) of Si gradient doping in structure unit (52)；
S4. the operation of step S2 is repeated；
S5. use triethyl-gallium for gallium source, NH3For nitrogen source, N2For carrier gas, SiH4As doped source, growth temperature is 840 DEG C, The SiH when starting to grow GaN barrier layer4SiH of the flow compared to the GaN barrier layer of last growth4Flow successively decreases, minimum SiH4Flow For 5 sccm, initial dopant concentration compares the initial dopant concentration linear decrease of the GaN barrier layer of last growth, and minimum doping is dense Degree is 1 × 1016 cm-3, terminate SiH when the growth of GaN barrier layer4Flow is 5 sccm, terminates doping concentration compared to last growth The initial dopant concentration linear decrease of GaN barrier layer, minimum doping concentration are 1 × 1016 cm-3, growth time is 350 s；
S6. step S4 and S5, the continued growth 2-9 group structural unit (52) are repeated.
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CN114695610A (en) * 2022-05-31 2022-07-01 江西兆驰半导体有限公司 GaN-based LED epitaxial wafer, epitaxial growth method and LED chip

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CN113451458A (en) * 2020-05-22 2021-09-28 重庆康佳光电技术研究院有限公司 Superlattice layer, LED epitaxial structure, display device and manufacturing method thereof
WO2021232443A1 (en) * 2020-05-22 2021-11-25 重庆康佳光电技术研究院有限公司 Superlattice layer, led epitaxial structure, display device and manufacturing method therefor
CN113451458B (en) * 2020-05-22 2022-04-01 重庆康佳光电技术研究院有限公司 Superlattice layer, LED epitaxial structure, display device and manufacturing method thereof
CN114373838A (en) * 2021-12-29 2022-04-19 南通同方半导体有限公司 LED epitaxial wafer with quantum barrier layer silicon doping structure, growth method and manufacturing method thereof
CN114373838B (en) * 2021-12-29 2024-02-09 南通同方半导体有限公司 LED epitaxial wafer with quantum barrier layer silicon doping structure, growth method and manufacturing method thereof
CN114695610A (en) * 2022-05-31 2022-07-01 江西兆驰半导体有限公司 GaN-based LED epitaxial wafer, epitaxial growth method and LED chip
CN114695610B (en) * 2022-05-31 2023-02-28 江西兆驰半导体有限公司 GaN-based LED epitaxial wafer, epitaxial growth method and LED chip

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