CN106410006B - A kind of UV LED and its production method of integrated visible light instruction device - Google Patents
A kind of UV LED and its production method of integrated visible light instruction device Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title abstract description 6
- 230000004888 barrier function Effects 0.000 claims abstract description 15
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 11
- 238000004020 luminiscence type Methods 0.000 claims abstract description 7
- 230000005284 excitation Effects 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 178
- 238000000605 extraction Methods 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 238000001704 evaporation Methods 0.000 claims description 7
- 230000008020 evaporation Effects 0.000 claims description 7
- 238000002360 preparation method Methods 0.000 claims description 6
- 239000011241 protective layer Substances 0.000 claims description 6
- 230000000717 retained effect Effects 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 6
- 238000005086 pumping Methods 0.000 abstract description 3
- 230000003760 hair shine Effects 0.000 abstract description 2
- 150000004767 nitrides Chemical class 0.000 abstract description 2
- 238000001514 detection method Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 206010040844 Skin exfoliation Diseases 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000035618 desquamation Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004887 air purification Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
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- 238000002347 injection Methods 0.000 description 1
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- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000000825 ultraviolet detection Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
A kind of UV LED and its production method of integrated visible light instruction device, it is related to nitride epitaxial chip technology field, ultra-violet light-emitting layer is arranged between N GaN electron supply layers and p-type AlGaN electronic barrier layers the present invention, and ultraviolet light is generated by electroluminescent；The present invention also will be seen that light shines and be placed between N GaN electron supply layers and U GaN layers that the ultraviolet excitation visible light luminescent layer generated using electroluminescent is made visible light luminescent layer pass through luminescence generated by light and generates visible light.Visible light luminescent layer passes through ultraviolet light photoluminescent emission visible light, though absorbing part ultraviolet light, the external quantum efficiency of ultraviolet light is reduced to a certain extent, which does not need electrical pumping, the internal quantum efficiency for avoiding influencing ultraviolet light, reduces the loss to device electric energy.
Description
Technical field
The present invention relates to nitride epitaxial chip technology fields, be especially to provide it is a kind of integrate visible optical indicator it is ultraviolet
Light emitting diode.
Background technology
With the continuous development of LED technology, epitaxy technique is horizontal gradually ripe, and the preparation of uv-LED device is possibly realized,
Although ultraviolet LED cannot be used for direct illumination, the institute that have LED is advantageous, in sterilizing, analysis and test device,
Ultraviolet phototherapy, anti-counterfeiting detection, air purification, the various fields such as ultra-violet curing are able to extensive use, although ultraviolet leds can be applied
Field is extensive, but because its wavelength is short, and human body will cause serious harm under its prolonged exposure to skin, eyes etc..Together
When just because of its wavelength in black light wave band, therefore can not be detected by human eye, lead to the presence of quilt in practical applications
The long-irradiated hidden danger of ultraviolet light.Therefore understand ultraviolet light presence, avoid it is unwitting in the case of ultraviolet light to human body
Time exposure is very important.
Have the detection device and strength indicator of some ultraviolet lights at present, but all non-integration are in ultraviolet light emitting device,
And short life, it is of high cost.
Invention content
The present invention is directed to overcome the shortcomings of traditional UV detection device and strength indicator, providing that one kind is integrated with can
Whether the UV LED of light-exposed instruction device, this device can allow human eye indirect detection emitting to UV LED
Ultraviolet light and its emissive porwer, avoid without knowing it ultraviolet light cause damages to the time exposure of human body.
The present invention includes that the electrically-conductive backing plate in P-type electrode the same side, bonded layer, metallic reflector, the holes p-type GaN is arranged
Supplying layer, p-type AlGaN electronic barrier layers, AlInGaN/AlInGaN multiple quantum wells UV-light luminous layer, the supply of N-GaN electronics
Layer, the N-type electrode being arranged on N-GaN electron supply layers；It is characterized in that：N-GaN electronics other than N-type electrode region supplies
To patterned N-GaN electron supply layers are arranged on layer, InGaN/ is set gradually on patterned N-GaN electron supply layers
GaN multiple quantum wells visible light luminescent layers and U-GaN layers.
Ultra-violet light-emitting layer is arranged between N-GaN electron supply layers and p-type AlGaN electronic barrier layers the present invention, passes through
Electroluminescent generates ultraviolet light；The present invention also will be seen that light shines and be placed between N-GaN electron supply layers and U-GaN layers, sharp
The ultraviolet excitation visible light luminescent layer generated with electroluminescent, makes visible light luminescent layer pass through luminescence generated by light and generates visible light.
Visible light luminescent layer is reduced by ultraviolet light photoluminescent emission visible light though absorbing part ultraviolet light to a certain extent
The external quantum efficiency of ultraviolet light, but the luminescent layer does not need electrical pumping, avoids the internal quantum efficiency for influencing ultraviolet light, reduces to device
The loss of part electric energy.
After ultraviolet light of the present invention generates, visible light luminescent layer radiating visible light will be excited, may make ultraviolet light and visible light
It is synchronous to generate and die out.Identification by human eye to the visible light, so that it may detect the presence of ultraviolet light, ultraviolet ray intensity is got over
Greatly, luminescence generated by light effect is stronger, it is seen that the intensity of light is also bigger.The device can not only ultraviolet light radiation, while also conduct itself
The detection device of oneself, not only can with indirect detection itself whether emitting ultraviolet light, own transmission ultraviolet light can also be detected
It is strong and weak.Due to the present invention can allow the UV LED in the operating condition simultaneously radiant section visible light by eye detection
Arrive, while can also judge the power of ultraviolet light according to the intensity of visible light, avoid without knowing it ultraviolet light to human body
Time exposure and cause damages, improve the security feature of UV LED.
Further, the present invention is also to one layer of SiO2 of device exposed surface region overlay in addition to N-type electrode and P-type electrode
Protective layer improves the reliability of device.
In addition, the upper light extraction gross area of InGaN/GaN multiple quantum wells visible light luminescent layer of the present invention accounts for the supply of N-GaN electronics
The 10%~50% of the upper light extraction gross area of layer.The method that selective etch can be used makes the light-emitting zone of visible light account for entire device
The 10%~50% of part upper surface light-emitting area both can avoid visible light and shone in the case where ensureing that device can send out visible light
A large amount of absorption of the layer to ultraviolet light, while the patterned surface after etching is similar to the effect being roughened to light-emitting surface, can carry
The light extraction efficiency of high ultraviolet light.
Preferably, the upper light extraction gross area of InGaN/GaN multiple quantum wells visible light luminescent layer accounts for N-GaN electron supply layers
The 20%~40% of the upper light extraction gross area.In the range, it is ensured that the optical power loss of ultraviolet light is less than 10% and radiates visible
Light can reach the function of instruction.
The present invention includes the following steps another object is that propose the production method of the above product：
1）It is made on a temporary substrates and forms buffer layer；
2）Be epitaxially-formed successively on the buffer layer U-GaN layers, it is visible light luminescent layer, N-GaN electron supply layers, ultraviolet
Light luminescent layer, p-type AlGaN electronic barrier layers and the holes p-type GaN supplying layer；
3）The evaporation metal reflecting layer on the supplying layer of p-type hole；
4）On metallic reflector by evaporation metal bonded layer by wafer bonding on electrically-conductive backing plate；
5）Stripping temporary substrates, buffer layer and part U-GaN layers；
6）Selective etch is carried out to the U-GaN layer surfaces after stripping, retains U-GaN layers patterned, etching depth is straight
To N-GaN electron supply layers；
7）It is made on electrically-conductive backing plate and forms P-type electrode；It is made on N-GaN electron supply layers and forms N-type electrode.
N-type electrode is made on the N-GaN layers after etching by the method for the present invention, so that ultra-violet light-emitting layer is sent out by electric current injection
Go out ultraviolet light, and grow visible light luminescent layer between U-GaN layers and N-GaN layers, visible light is directly gone out by ultraviolet excitation,
Without excess loss electrical power；
The method of the present invention combination substrate desquamation technology, epitaxial layer is inverted in conductive substrates and forms vertical structure, can be carried
Rise the luminous efficiency of device；
The method of the present invention forms patterned light output surface by selective etch, and the light extraction efficiency of device can be improved.
In order to produce more reliable device, the present invention can also be in step 7）Afterwards, to the device in addition to N-type electrode and P-type electrode
One layer of SiO of part exposed surface region overlay2Protective layer.
The step 6）In, the light extraction gross area accounts on N-GaN electron supply layers on the U-GaN layers that retain after selective etch
The 10%~50% of the light extraction gross area.
The step 6）In, the light extraction gross area accounts on N-GaN electron supply layers on the U-GaN layers that retain after selective etch
The 20%~40% of the light extraction gross area.
Description of the drawings
Fig. 1 is a kind of epitaxial structure schematic diagram of the present invention.
Fig. 2 is the chip device structural schematic diagram that the present invention is formed in the production process.
Specific implementation mode
One, manufacture craft process：
1, as shown in Figure 1, the AlN buffer layers 2 of one layer of 10-50nm thickness are deposited using PVD first in Sapphire Substrate 1.
2, there is the Sapphire Substrate 1 of AlN buffer layers 2 to be placed in MOCVD reaction chambers vapor deposition to be grown respectively with lower structure：
Grow one layer of U-GaN layer 3,0.5-3 μm of growth thickness.
Visible light luminescent layer 4 is grown on U-GaN layers 3.Wherein visible light luminescent layer 4 includes the InGaN/ in 3-10 period
GaN multiple quantum well layers, wherein InGaN well layer thickness 1~6nm, GaN barrier layer thickness 2-12nm, In concentration of component is 0.1~0.3
Between, it is visible light to control its In concentration of component to ensure that it sends out.
N-GaN electron supply layers 5 are grown on visible light luminescent layer 4, doping concentration is in 5*1017~5*1019, material thickness
1~4 μm of degree.
UV-light luminous layer 6 is grown on N-GaN electron supply layers 5, UV-light luminous layer 6 includes 3~20 periods
AlInGaN/AlInGaN multiple quantum well layers, wherein 1~6nm of well layer thickness, 2~12nm of barrier layer thickness, and well layer thickness, which are less than, to be built
Layer thickness；Well layer Al components are between 0~0.1, and barrier layer Al components are between 0.1~0.3 and well layer In components are more than barrier layer In
Component.
The growing P-type AlGaN electronic barrier layers 7 on UV-light luminous layer 6, doping concentration is in 1*1017~1*1019, Al groups
Point 0.2~0.6,10~100nm of thickness.
The growth P-type GaN hole supplying layer 8 on p-type AlGaN electronic barrier layers 7, doping concentration is in 1*1017~1*1019,
Thickness is in 50~500nm.
So far, the growth in completion MOCVD reaction chambers, the epitaxial slice structure of acquirement, as shown in Figure 1.
3, one layer of Ag metallic reflector 9,100~300nm of thickness are deposited on p-type hole supplying layer 8.
4, the evaporation metal bonded layer 10 on metallic reflector 9, entire device is bonded on electrically-conductive backing plate 11.
5, using laser substrate desquamation technology, substrate 1, AlN buffer layers 2 and part U-GaN layers 3 are peeled off.
6, selective etch is carried out to 3 surface of U-GaN layers after stripping, the total face of light extraction on the U-GaN layers 3 retained after etching
Product accounts for 10%~50% of the light extraction gross area on N-GaN electron supply layers 5, preferably 20%~40%, and etching depth is until N-GaN electronics
Supplying layer 5, as shown in Figure 2.
7, it is made on electrically-conductive backing plate 11 and forms P-type electrode 12, made on N-GaN electron supply layers 5 and form N-type electrode
13。
8, to one layer of SiO of device exposed surface region overlay in addition to N-type electrode 13 and P-type electrode 122Protective layer 14.
So far, the chip device technique of structure as shown in Figure 2 is completed.
Two, product structure feature：
As shown in Fig. 2, the present invention is disposed with electrically-conductive backing plate 11, bonded layer 10, metal in the same side of P-type electrode 12
Reflecting layer 9, the holes p-type GaN supplying layer 8, p-type AlGaN electronic barrier layers 7, AlInGaN/AlInGaN multiple quantum wells ultraviolet lights hair
Photosphere 6, N-GaN electron supply layers 5.
N-type electrode 13 and patterned N-GaN electron supply layers 5-1 are provided on N-GaN electron supply layers 5.
The upper light extraction gross area of InGaN/GaN multiple quantum wells visible lights luminescent layer 4（I.e. patterned N-GaN electronics supply
The total cross sectional area of layer 5-1）Account for 10%~50% of the light extraction gross area on N-GaN electron supply layers 5.
InGaN/GaN multiple quantum wells visible lights luminescent layer 4 is set gradually on patterned N-GaN electron supply layers 5-1
With U-GaN layers 3.In one layer of SiO of device exposed surface region overlay in addition to N-type electrode 13 and P-type electrode 122Protective layer 14.
Three, product effect
The UV LED of integrated visible light instruction device prepared by the present invention is by by ultra-violet light-emitting layer 6
It is arranged between N-GaN electron supply layers 5 and p-type AlGaN electronic barrier layers 7, is generated by electroluminescent ultraviolet
Light；Also it will be seen that light luminescent layer 4 is placed between N-GaN electron supply layer 5-1 and U-GaN layer 3, the purple of electroluminescent generation is utilized
Outer light excites visible light luminescent layer, so that visible light luminescent layer is passed through luminescence generated by light and generates visible light.Visible light luminescent layer passes through purple
Outer light inspires visible light, though absorbing part ultraviolet light, reduces the external quantum efficiency of ultraviolet light to a certain extent, this can
Light-exposed luminescent layer does not need electrical pumping, is not necessarily to excess loss electrical power.Device of the present invention is total to electroluminescent and luminescence generated by light
Under same-action, the function of ultraviolet light radiation was both reached, and visible light and ultraviolet light are generated and die out simultaneously, make the visible light also
The presence of detection ultraviolet light is can be used as, and the intensity of visible light is with the weak linear change of ultraviolet light intensity.Due to the present invention
Can allowing the UV LED, radiant section visible light is arrived by eye detection simultaneously in the operating condition, while can also be according to can
Light-exposed intensity judges the power of ultraviolet light, avoid without knowing it ultraviolet light the time exposure of human body is caused
Harm, improves the security feature of UV LED.The UV LED of the integrated visible light instruction device is in reality
It is easy to use without additional increase ultraviolet detector in the application of border.
Claims (9)
1. a kind of UV LED of integrated visible light instruction device, including it is successively set on leading for P-type electrode the same side
Electric substrate, bonded layer, metallic reflector, the holes p-type GaN supplying layer, p-type AlGaN electronic barrier layers, AlInGaN/AlInGaN
Multiple quantum wells UV-light luminous layer, N-GaN electron supply layers, the N-type electrode being arranged on N-GaN electron supply layers；Its feature
It is：Patterned N-GaN electron supply layers are set on the N-GaN electron supply layers other than N-type electrode region, graphical
N-GaN electron supply layers on set gradually InGaN/GaN multiple quantum wells visible light luminescent layers and U-GaN layers；UV-light luminous
Layer generates ultraviolet light by electroluminescent, and ultraviolet excitation visible light luminescent layer makes visible light luminescent layer be produced by luminescence generated by light
Raw visible light.
2. a kind of UV LED of integrated visible light instruction device according to claim 1, it is characterised in that：It is right
One layer of SiO of device exposed surface region overlay in addition to N-type electrode and P-type electrode2Protective layer.
3. a kind of UV LED of integrated visible light instruction device according to claim 1 or claim 2, it is characterised in that：
It accounts in N-GaN electron supply layers and carries on the back away from the light extraction gross area of electrically-conductive backing plate in InGaN/GaN multiple quantum wells visible light luminescent layers
10%~50% of the light extraction gross area from electrically-conductive backing plate.
4. a kind of UV LED of integrated visible light instruction device according to claim 3, it is characterised in that：
It accounts in N-GaN electron supply layers and carries on the back away from the light extraction gross area of electrically-conductive backing plate in InGaN/GaN multiple quantum wells visible light luminescent layers
20%~40% of the light extraction gross area from electrically-conductive backing plate.
5. a kind of UV LED of integrated visible light instruction device according to claim 1, which is characterized in that institute
The preparation method for stating UV LED includes the following steps：
1）It is made on a temporary substrates and forms buffer layer；
2）Be epitaxially-formed successively on the buffer layer U-GaN layers, visible light luminescent layer, N-GaN electron supply layers, ultraviolet light hair
Photosphere, p-type AlGaN electronic barrier layers and the holes p-type GaN supplying layer；
3）The evaporation metal reflecting layer on the supplying layer of the holes p-type GaN；
4）On metallic reflector by evaporation metal bonded layer by wafer bonding on electrically-conductive backing plate；
5）Stripping temporary substrates, buffer layer and part U-GaN layers；
6）Selective etch is carried out to the U-GaN layer surfaces after stripping, retains U-GaN layer patterned, etching depth is up to N-
GaN electron supply layers；
7）It is made on electrically-conductive backing plate and forms P-type electrode；It is made on N-GaN electron supply layers and forms N-type electrode.
6. a kind of preparation method of the UV LED of integrated visible light instruction device as described in claim 1, special
Sign is to include the following steps：
1）It is made on a temporary substrates and forms buffer layer；
2）Be epitaxially-formed successively on the buffer layer U-GaN layers, visible light luminescent layer, N-GaN electron supply layers, ultraviolet light hair
Photosphere, p-type AlGaN electronic barrier layers and the holes p-type GaN supplying layer；
3）The evaporation metal reflecting layer on the supplying layer of the holes p-type GaN；
4）On metallic reflector by evaporation metal bonded layer by wafer bonding on electrically-conductive backing plate；
5）Stripping temporary substrates, buffer layer and part U-GaN layers；
6）Selective etch is carried out to the U-GaN layer surfaces after stripping, retains U-GaN layer patterned, etching depth is up to N-
GaN electron supply layers；
7）It is made on electrically-conductive backing plate and forms P-type electrode；It is made on N-GaN electron supply layers and forms N-type electrode；
UV-light luminous layer generates ultraviolet light by electroluminescent, and ultraviolet excitation visible light luminescent layer makes visible light luminescent layer
Visible light is generated by luminescence generated by light.
7. integrating the preparation method of the UV LED of visible light instruction device according to claim 6, feature exists
In in step 7）Afterwards, to one layer of SiO of device exposed surface region overlay in addition to N-type electrode and P-type electrode2Protective layer.
8. integrating the preparation method of the UV LED of visible light instruction device according to claim 6, feature exists
In the step 6）In, the light extraction gross area in the U-GaN layers retained after selective etch away from electrically-conductive backing plate accounts for N-GaN electronics
Away from the 10%~50% of the light extraction gross area of electrically-conductive backing plate in supplying layer.
9. integrating the preparation method of the UV LED of visible light instruction device according to claim 8, feature exists
In the step 6）In, the light extraction gross area in the U-GaN layers retained after selective etch away from electrically-conductive backing plate accounts for N-GaN electronics
Away from the 20%~40% of the light extraction gross area of electrically-conductive backing plate in supplying layer.
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| DE102017103856A1 (en) * | 2017-02-24 | 2018-08-30 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor chip |
| CN111106212A (en) * | 2019-12-26 | 2020-05-05 | 南京亮芯信息科技有限公司 | Deep ultraviolet light-emitting diode with vertical structure and preparation method thereof |
| CN111223969B (en) * | 2020-01-10 | 2021-07-20 | 武汉深紫科技有限公司 | Deep ultraviolet LED device with visible light wave band and preparation method thereof |
| CN112018219B (en) * | 2020-09-04 | 2022-06-07 | 广东省科学院半导体研究所 | Ultraviolet light-emitting chip, preparation method and application thereof |
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