CN105336820A - Preparation method of ultraviolet and visible coexisting electroluminescent device - Google Patents
Preparation method of ultraviolet and visible coexisting electroluminescent device Download PDFInfo
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- CN105336820A CN105336820A CN201510632642.8A CN201510632642A CN105336820A CN 105336820 A CN105336820 A CN 105336820A CN 201510632642 A CN201510632642 A CN 201510632642A CN 105336820 A CN105336820 A CN 105336820A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000004544 sputter deposition Methods 0.000 claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 239000010703 silicon Substances 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims description 15
- 239000000919 ceramic Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 238000003980 solgel method Methods 0.000 claims description 3
- 238000011282 treatment Methods 0.000 claims description 3
- 238000005401 electroluminescence Methods 0.000 abstract description 14
- 239000010409 thin film Substances 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000011982 device technology Methods 0.000 abstract 1
- 238000007669 thermal treatment Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 35
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 19
- 239000000463 material Substances 0.000 description 9
- 239000011787 zinc oxide Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 5
- 230000000007 visual effect Effects 0.000 description 5
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 101100001675 Emericella variicolor andJ gene Proteins 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0083—Processes for devices with an active region comprising only II-VI compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention belongs to the field of photoelectric devices, relates to a preparation method of an ultraviolet and visible coexisting electroluminescent device, and particularly relates to a preparation method of an ultraviolet and visible coexisting electroluminescent device with an Au/MgO/CdZnO/SiMIS structure. The device comprises a substrate. A CdZnO thin film, a MgO thin film and an Au electrode are deposited on the front surface of the substrate from the bottom to the top in turn. An ohmic contact electrode is deposited on the back surface of the substrate. According to the device, a ZnO and CdZnO coexisting thin film luminescent layer is obtained by performing thermal treatment on the sputtering CdZnO thin film, and the thin film is enabled to emit electroluminescence arranged in an ultraviolet and visible region under certain forward bias voltage (the substrate is connected with negative voltage). Besides, the structure and the realization mode of the device are simple, and the preparation technology and the used equipment are compatible with the current mature silicon device technology.
Description
Technical field
The invention belongs to field of photoelectric devices, relate to a kind of ultraviolet and the visible and preparation method of the electroluminescent device deposited, be specially a kind of ultraviolet of Au/MgO/CdZnO/SiMIS structure and the visible and preparation method of the electroluminescent device deposited.
Background technology
Zinc oxide (ZnO) is a kind of important direct semiconductor material with wide forbidden band, and under room temperature, its energy gap is 3.37ev.Due to its abundant raw material, with low cost, nontoxic pollution-free, has higher room-temperature exciton binding energy (about 60meV), is considered to the short-wave long light-emitting material of new generation likely replacing gallium nitride (GaN).Tempting application prospect is had in fields such as semiconductor lighting, plane display and ultraviolet detectors.
In recent years, along with the development of ultraviolet, White light LED technology, people are increasingly urgent to the demand of ultraviolet, visual field electroluminescent device, make the correlative study of ZnO receive increasing concern.But the intrinsic energy gap of ZnO, the luminescence determining it is positioned at ultra-violet (UV) band, expands its emission wavelength range to visible region if want, then must carry out doping vario-property to it.Therefore, researcher has also carried out large quantity research to the CdZnO film in ZnO system, and research finds, by the Cd content regulated in CdZnO film, effectively the emission wavelength of CdZnO film to be adjusted to visible region.(J.A.VanVechtenandT.K.Bergstresser,Phys.Rev.B.1,3351(1970))。
At present, researcher is designed by various structures, achieve the electroluminescent device based on ZnO and CdZnO film, its emission wavelength can be adjusted to visible region (L.Li from ultraviolet, Z.Yang, J.Y.Kong, andJ.L.Liu, Appl.Phys.Lett.95,232117 (2009)).But the zno-based device prepared at present can only produce the electroluminescence of single wavelength, that is, visible ray can only be produced and maybe can only produce ultraviolet light.If the multi-wavelength luminescence simultaneously of ultraviolet, visual field can be realized, greatly can expand the range of application of zno-based electroluminescent device undoubtedly, realize this goal if want, multiple zno-based emitting layer material can only superpose by existing means, such as on ZnO film, prepare CdZnO material, or on CdZnO film making ZnO material.This has just increased the weight of the preparation difficulty of device greatly, because the superposition of multiple emitting layer material, level-density parameter and structural design considerably increases preparation difficulty all undoubtedly.Also light efficiency when penetrating upper strata luminescent layer that the luminescent material being in bottom sends have impact on the luminous efficiency of device like this, because can reduce greatly simultaneously.How utilizing single emitting layer material, realize the electroluminescence while ultraviolet and visible region of zno-based film, is the technical barrier needing solution badly.
Summary of the invention
The object of the invention is to propose a kind ofly can make zno-based film electroluminescent ultraviolet and visible and preparation method of the electroluminescent device deposited while ultraviolet and visible region.Technical solution of the present invention is, (1) adopt sputtering method at deposited on substrates CdZnO film, the target wherein depositing CdZnO film used is CdZnO ceramic target, in CdZnO ceramic target, Cd doping counts 60% with molar content, substrate heating temperature is 400 ~ 500 DEG C, sputtering power is 120W, sputtering time is 1 hour, air pressure is 4Pa, the tube furnace put into by film subsequently under inert atmosphere protection is heat-treated, heat treated temperature is 600 ~ 800 DEG C, and the heat treated time is 10 ~ 60 minutes, and described substrate is N-type silicon chip;
(2) adopt sol-gel process to prepare MgO film on CdZnO film, carry out heat treated to CdZnO/MgO film subsequently, heat treatment temperature is 300 ~ 400 DEG C, and heating treatment time is 1 ~ 2 hour;
(3) sputtering method is adopted on the MgO pellicular front of CdZnO/MgO film, to deposit translucent Au electrode, at substrate back deposit ohmic contact electrode.
The N-type silicon chip of described substrate to be resistivity be 0.005 ~ 50 ohmcm.
The electroluminescent device tool utilizing the inventive method to prepare has the following advantages:
1. the present invention utilizes simple sputtering and subsequent heat treatment technique in the CdZnO film of preparation, produce the disperse phase of a large amount of ZnO, namely the thin-film light emitting layer of the effective compound of ZnO/CdZnO is obtained, under certain forward bias (substrate connects negative voltage), thus electroluminescence while realizing the ultraviolet of zinc oxide based material, visual field.
2. the present invention does not need complicated preparation and equipment for Heating Processing, and technological parameter is simple, is easy to realize.
3. the electroluminescent device good stability prepared of the present invention is repeatable high.
4. the equipment that preparation technology of the present invention is used and the silicon device process compatible of existing maturation, to substrate shape and thin film deposition size without particular/special requirement, conveniently can realize mass production.
Accompanying drawing explanation
Fig. 1 is the structural representation of device of the present invention;
Fig. 2 is electroluminescence (EL) spectrum that the electroluminescent device of the embodiment of the present invention 1 obtains under different forward current;
Fig. 3 is electroluminescence (EL) spectrum that the electroluminescent device of the embodiment of the present invention 2 obtains under different forward current.
Embodiment
Ultraviolet of the present invention and the visible and electroluminescent device deposited, comprise substrate, substrate face deposits CdZnO film, MgO film and Au electrode from bottom to top successively, substrate back deposit ohmic contact electrode.
The N-type silicon chip of described substrate to be resistivity be 0.005 ~ 50 ohmcm.
The invention provides the preparation method of above-mentioned electroluminescent device, comprising:
(1) adopt sputtering method at deposited on substrates CdZnO film, the target wherein depositing CdZnO film used is CdZnO ceramic target, in CdZnO ceramic target, Cd doping counts 60% with molar content, substrate heating temperature is 400 ~ 500 DEG C, sputtering power is 120W, sputtering time is 1 hour, and air pressure is 4Pa.The tube furnace put into by film subsequently under inert atmosphere protection is heat-treated, and heat treated temperature is 600 ~ 800 DEG C, and the heat treated time is 10 ~ 60 minutes;
(2) adopt sol-gel process to prepare MgO film on CdZnO film, carry out heat treated to film subsequently, heat treatment temperature is 300 ~ 400 DEG C, and heating treatment time is 1 ~ 2 hour.；
(3) sputtering method is adopted on MgO film, to deposit translucent Au electrode, at substrate back deposit ohmic contact electrode.
As Fig. 1, a kind of electroluminescent device, comprises substrate 1, and substrate 1 front deposits CdZnO film 2, MgO film 3 and translucent Au electrode 4 from bottom to top successively, and substrate 1 backside deposition has Ohm contact electrode 5.Substrate selects silicon chip, and resistivity is generally 0.005 ~ 50 ohmcm.Embodiment 1 and embodiment 2 have prepared the device of said structure, specific as follows:
Embodiment 1
1) clean N-type <100>, resistivity is 0.005 ohmcm, size is 15 × 15mm
2, thickness is the silicon chip of 675 microns;
2) utilize radio frequency sputtering to deposit CdZnO film on a si substrate, underlayer temperature is 400 DEG C; Sputtering power is 120W, Ar, O
2flow be respectively 30:15, air pressure 4Pa, sputter 1 hour, thickness is about 400nm.At N after deposition
2in tube furnace, 600 DEG C of heat treatments 1 hour are carried out under atmosphere;
3) spin coating one deck MgO film on CdZnO film, dries 10 minutes for 100 DEG C, under air 300 DEG C of heat treatment 2 hours;
4) in MgO membrane, sputter the translucent Au electrode 4 that about 20nm is thick, and on the silicon substrate back side, sputter the thick Au electrode of about 100nm (Ohm contact electrode 5).Sputtering power is 45W, Ar flow is 20, air pressure 5Pa, and underlayer temperature is 150 DEG C.Front electrode sputters 30 seconds, and backplate sputters 3 minutes.
Fig. 2 gives electroluminescence (EL) spectrum under the different Injection Currents that the device that obtained by said method at room temperature recorded, and the Au electrode now on MgO film just connects, and the Au electrode of Si substrate back connects negative.As we can see from the figure, device is at ultraviolet region, and obvious glow peak has all appearred in visible region, and along with the increase of Injection Current, electroluminescent intensity also increases thereupon.This illustrates that device creates electroluminescence in ultraviolet, visual field simultaneously.
Embodiment 2
1) clean N-type <100>, resistivity is 50 ohmcms, size is 15 × 15mm
2, thickness is the silicon chip of 675 microns;
2) utilize radio frequency sputtering to deposit CdZnO film on a si substrate, underlayer temperature is 500 DEG C; Sputtering power is 120W, Ar, O
2flow be respectively 30:15, air pressure 4Pa, sputter 1 hour, thickness is about 400nm.At N after deposition
2in tube furnace, 800 DEG C of heat treatments 10 minutes are carried out under atmosphere;
3) spin coating one deck MgO film on CdZnO film, dries 10 minutes for 100 DEG C, under air 400 DEG C of heat treatment 1 hour;
4) in MgO membrane, sputter the translucent Au electrode 4 that about 20nm is thick, and on the silicon substrate back side, sputter the thick Au electrode of about 100nm (Ohm contact electrode 5).Sputtering power is 45W, Ar flow is 20, air pressure 5Pa, and underlayer temperature is 150 DEG C.Front electrode sputters 30 seconds, and backplate sputters 3 minutes.
Fig. 3 gives electroluminescence (EL) spectrum under the different Injection Currents that the device that obtained by said method at room temperature recorded, and the Au electrode now on MgO film just connects, and the Au electrode of Si substrate back connects negative.As we can see from the figure, device is at ultraviolet region, and obvious glow peak has all appearred in visible region, and along with the increase of Injection Current, electroluminescent intensity also increases thereupon.This illustrates that device creates electroluminescence in ultraviolet, visual field simultaneously.
Claims (2)
1. ultraviolet and a visible and preparation method for the electroluminescent device deposited, comprising:
(1) adopt sputtering method at deposited on substrates CdZnO film, the target wherein depositing CdZnO film used is CdZnO ceramic target, in CdZnO ceramic target, Cd doping counts 60% with molar content, substrate heating temperature is 400 ~ 500 DEG C, sputtering power is 120W, sputtering time is 1 hour, air pressure is 4Pa, the tube furnace put into by film subsequently under inert atmosphere protection is heat-treated, heat treated temperature is 600 ~ 800 DEG C, the heat treated time is 10 ~ 60 minutes, and described substrate is N-type silicon chip;
(2) adopt sol-gel process to prepare MgO film on CdZnO film, carry out heat treated to CdZnO/MgO film subsequently, heat treatment temperature is 300 ~ 400 DEG C, and heating treatment time is 1 ~ 2 hour;
(3) sputtering method is adopted on the MgO pellicular front of CdZnO/MgO film, to deposit translucent Au electrode, at substrate back deposit ohmic contact electrode.
2. a kind of ultraviolet according to claim 1 and the visible and preparation method of the electroluminescent device deposited, is characterized in that, the N-type silicon chip of described substrate to be resistivity be 0.005 ~ 50 ohmcm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510632642.8A CN105336820B (en) | 2015-09-29 | 2015-09-29 | The preparation method of electroluminescent device that is a kind of ultraviolet and visible and depositing |
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| CN201510632642.8A CN105336820B (en) | 2015-09-29 | 2015-09-29 | The preparation method of electroluminescent device that is a kind of ultraviolet and visible and depositing |
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| CN105336820B CN105336820B (en) | 2017-12-15 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106410006A (en) * | 2016-06-22 | 2017-02-15 | 厦门乾照光电股份有限公司 | Ultraviolet light emitting diode integrating visible light indicating device and production method thereof |
| WO2022188937A1 (en) * | 2021-03-09 | 2022-09-15 | Baldr Light Aps | A light emitting device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101630713A (en) * | 2009-08-03 | 2010-01-20 | 浙江大学 | Ultraviolet electroluminescence device based on titanium dioxide film |
| CN102610724A (en) * | 2012-04-01 | 2012-07-25 | 浙江大学 | Electroluminescent device based on CdZnO thin film and preparation method of electroluminescent device |
| CN104124317A (en) * | 2013-04-25 | 2014-10-29 | 浙江大学 | Neodymium-dope inorganic electroluminescent infrared light-emitting device and manufacturing method thereof |
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- 2015-09-29 CN CN201510632642.8A patent/CN105336820B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101630713A (en) * | 2009-08-03 | 2010-01-20 | 浙江大学 | Ultraviolet electroluminescence device based on titanium dioxide film |
| CN102610724A (en) * | 2012-04-01 | 2012-07-25 | 浙江大学 | Electroluminescent device based on CdZnO thin film and preparation method of electroluminescent device |
| CN104124317A (en) * | 2013-04-25 | 2014-10-29 | 浙江大学 | Neodymium-dope inorganic electroluminescent infrared light-emitting device and manufacturing method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106410006A (en) * | 2016-06-22 | 2017-02-15 | 厦门乾照光电股份有限公司 | Ultraviolet light emitting diode integrating visible light indicating device and production method thereof |
| CN106410006B (en) * | 2016-06-22 | 2018-08-17 | 厦门乾照光电股份有限公司 | A kind of UV LED and its production method of integrated visible light instruction device |
| WO2022188937A1 (en) * | 2021-03-09 | 2022-09-15 | Baldr Light Aps | A light emitting device |
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