CN202712250U - Network-shaped electrode applicable to high-power GaN-based LED chips - Google Patents
Network-shaped electrode applicable to high-power GaN-based LED chips Download PDFInfo
- Publication number
- CN202712250U CN202712250U CN 201220206923 CN201220206923U CN202712250U CN 202712250 U CN202712250 U CN 202712250U CN 201220206923 CN201220206923 CN 201220206923 CN 201220206923 U CN201220206923 U CN 201220206923U CN 202712250 U CN202712250 U CN 202712250U
- Authority
- CN
- China
- Prior art keywords
- type metal
- electrode
- type
- metal pad
- network
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Led Devices (AREA)
Abstract
The utility model relates to the technical field of semiconductor illumination and provides a network-shaped electrode applicable to high-power GaN-based LED chips. Each electrode of a chip is composed of a network-shaped electrode and metal pads, the adopted electrodes at least have center inversion symmetry, secondary axial symmetry and quartic axial symmetry, wherein the secondary axial symmetry and the quartic axial symmetry are achieved by surrounding and being perpendicular to the center normal of the chip, and accordingly the electrodes can coincide when the chip rotates by 180 degrees, 270 degrees and 360 degrees around the center normal. A portion above an N-type GaN layer in an epitaxial layer is divided into multiple independent units not contacting with one another by the aid of N-type electrode slots on a projection plane perpendicular to the chip central axis, so that the units are unaffected by one another. Current distribution is more even by more electrode symmetry elements, and uneven heating of the chip is improved effectively. P-type metal pads and N-type metal pads can be selectively connected during routing by the aid of high symmetry of the P-type metal pads and the N-type metal pads, and accordingly flexibility of routing is improved.
Description
Technical field
The utility model relates to technical field of semiconductor illumination, relates in particular to a kind of network-like electrode that is applicable to GaN based LED chip of great power, and its CURRENT DISTRIBUTION is even, has preferably photoelectric characteristic.
Background technology
LED is solid state light emitter of new generation, and it has, and volume is little, power consumption is low, long service life, high-luminous-efficiency, low in calories, environmental protection and energy saving, the plurality of advantages such as sturdy and durable, thereby has wide application market.LED is widely applied in fields such as backlight, traffic lights, large scale display, automotive lighting, decorative lightings at present.Along with continuous maturation and the development of GaN base LED technology, based on the lighting of GaN based high-power led chip will be expected to become the 4th generation lighting source, have extremely widely application prospect.
At present, commercial GaN based light-emitting diode often on carborundum, monocrystalline silicon and Sapphire Substrate the method extension by chemical vapour deposition (CVD) prepare.The GaN based light-emitting diode generally has three kinds of structures: the first is positive assembling structure, and the P type electrode of its chip and N-type electrode are at the same face.The second is inverted structure, and its light-emitting diode chip for backlight unit tips upside down on the monocrystalline silicon, and P type electrode and the N-type electrode of chip are bonded on the monocrystalline silicon by respective electrode.The third is vertical stratification, and its P type electrode and N-type electrode are separately positioned on the both sides of LED epitaxial loayer.
Adopt the GaN based light-emitting diode of Sapphire Substrate usually to adopt the positive assembling structure of the first and the inverted structure of the second.In positive assembling structure, generally be by the epitaxial wafer surface etch being formed mesa structure, P type electrode and N-type electrode being arranged on the same side.Like this, can have the extending transversely of electric current inevitably, because electric current tends to away the less passage of resistance, distribution of electrodes is uneven will be so that the as easy as rolling off a log generation crowding effect of electric current.Like this, it is luminous and heating is uneven, degradation problem under useful life to produce easily the GaN based light-emitting diode, thereby affects the stability of GaN based light-emitting diode.For powerful GaN based light-emitting diode, the phenomenon of current crowding and skewness is with even more serious.For so that the balanced current distribution of the chip of flowing through is necessary to optimize electrode shape, distribute thereby improve current expansion, this has great importance to the photoelectric properties that improve GaN base LED.
Now, the electrode of GaN based high-power light-emitting diode chip adopt more N electrode, P electrode mutually around the patterned electrodes structure.Although this structure has been improved current expansion to a certain extent, but, because the distribution of electrodes of this structure does not possess higher symmetry, the electric current in cause flowing through P district and N district remains asymmetric distribution at regional area, so just produces inevitably the local current crowding effect.
The utility model content
The purpose of this utility model is to address the above problem, a kind of light-emitting diode with network-like electrode is provided, it is full symmetric and can change as required electrode number structurally, in addition, its N-type electrode place groove is divided into a plurality of independently unit with chip, can stop electric current in the flow direction of some direction, can overcome the undesirable problem of current expansion that exists in the electrode of current GaN based high-power light-emitting diode, improve the uniformity of electric current distribution, increase the light extraction efficiency of chip, improve the unequal problem of chip cooling, thereby promote the photoelectric characteristic of chip.
For achieving the above object, the utility model is taked following technical scheme.
A kind of network-like electrode that is applicable to GaN based LED chip of great power, contain substrate, P type electrode and N-type electrode, surface coverage at the P of described substrate type gallium nitride GaN has the ito thin film layer, it is characterized in that, described substrate is divided into some symmetrical table tops by network-like groove, described groove is deep into the GaN layer of table top N-type, but the GaN layer of N-type is not done to cut apart, but quantum well layer, the superlattice layer on the N-type GaN layer of the GaN layer of N-type and extension thereof is divided into mutual disjunct part; Groove along the table top outer ring forms " L " shape table top; Described P type electrode comprises P type metal electrode and P type metal pad, is arranged on the P type ito thin film layer of mesa surfaces; Described N-type electrode is the network-like electrode that comprises N-type metal electrode and N-type metal pad, described N-type metal electrode is the network-like strip electrode of interlaced formation, be arranged on the mesa structure of table top, by silicon dioxide passivation layer or silicon nitride passivation is buried and with isolated by mesa edge and described groove; Described N-type metal pad is arranged on the Nodes of described network-like N-type metal electrode, and is isolated or isolated by described groove by described mesa edge and described groove.
Further, described substrate is rectangular configuration, and its length is at least 762 microns with wide.
Further, described P type metal electrode is the network-like strip electrode of interlaced formation, be arranged on the ito thin film layer (being generally tin indium oxide ITO) of described mesa surfaces, described P type metal pad is arranged on the Nodes that described network-like P type metal electrode connects.
Further, described P type metal electrode is made of independent P type metal pad, is arranged on the ito thin film layer of described mesa surfaces.
Further, described N-type metal electrode and N-type metal pad and described P face metal electrode and P face metal pad have at least the center inversion symmetry and wind perpendicular to the secondary axial symmetry of chip center's normal and four axial symmetries (namely, chip is around centre normal Rotate 180 degree, when 270 degree and 360 are spent, and electrode all can overlap).
The good effect that the utility model is applicable to the network-like electrode of GaN based LED chip of great power is:
(1) compares with existing patterned electrodes structure, the symmetry elements of network-like electrode of the present utility model are more, and network-like electrode has at least the center inversion symmetry and winds secondary axial symmetry perpendicular to the epitaxial wafer centre normal, four axial symmetries and six fold axis symmetry.
(2) because the N-type metal electrode is isolated by edges of substrate and groove, on perpendicular to axial projection of chip center plane, this network electrode is divided into a plurality of independently not contacted unit with the part on the N-type GaN layer in the substrate epitaxial layer, so that current direction is more even, greatly improve the distribution of electric current, thereby can effectively improve the uneven problem of chip heating.
(3) because the high symmetry of P type metal pad and N-type metal pad when the chip routing, can be connected P type metal pad and N-type metal pad selectively.
Description of drawings
Fig. 1 is the structural representation that the utility model is applicable to network-like electrode the first embodiment of GaN based LED chip of great power.
Fig. 2 is the structural representation that the utility model is applicable to network-like electrode the second embodiment of GaN based LED chip of great power.
Fig. 3 is the structural representation that the utility model is applicable to network-like the third embodiment of electrode of GaN based LED chip of great power.
Label among the figure is respectively:
1, table top; 2, groove; 3, P type ito thin film layer; 4, N-type metal electrode; 5, N-type metal pad;
51, the first N-type metal pad; 52, the second N-type metal pad; 53, the 3rd N-type metal pad;
54, the 4th N-type metal pad; 6, P type metal electrode; 7, P type metal pad;
71, a P type metal pad; 72, the 2nd P type metal pad; 73, the 3rd P type metal pad;
74, the 4th P type metal pad; 75, the 5th P type metal pad; 76, the 6th P type metal pad;
77, the 7th P type metal pad; 78, the 8th P type metal pad; 79, the 9th P type metal pad.
Embodiment
Continue to explain that below in conjunction with accompanying drawing the utility model is applicable to the implementation situation of the network-like electrode of GaN based LED chip of great power, 3 embodiment are provided.But enforcement of the present utility model is not limited to following execution mode.
Referring to accompanying drawing 1.A kind of network-like electrode that is applicable to GaN based LED chip of great power, employing is of a size of the chip of 1mm * 1mm, at first, etches groove 2 until the N layer in the front of GaN epitaxial loayer, chip is divided into 4 table tops 1: the live width of table top 1 is 100 microns, and the live width of groove 2 is 30 microns; Described table top 1 is rectangular configuration, and it is long and wide to be 762 microns.Described groove 2 does not thoroughly link to each other quantum well layer, superlattice layer, the P type GaN layer of these 4 table tops 1 on the N-type layer.Among the groove 2 and table top 1 on the depositing metal electrode, in the groove 2 and table top 1 on the metal live width be 20 microns.
The network-like electrode of N-type electrode for being consisted of by the first N-type metal pad 51, the second N-type metal pad 52, the 3rd N-type metal pad 53, the 4th N-type metal pad 54 and N-type metal electrode 4, described N-type metal electrode 4 is the network-like strip electrode of interlaced formation, be arranged on the mesa structure of table top 1, buried by silicon dioxide passivation layer and with isolated by table top 1 edge and described groove 2; The diameter of described the first N-type metal pad 51, the second N-type metal pad 52, the 3rd N-type metal pad 53, the 4th N-type metal pad 54 is 120 microns, and alternative is arranged on four angle ends on the table top 1, the i.e. Nodes of network-like N-type metal electrode 4.
P type electrode comprises P type metal electrode 6 and a P type metal pad 71, the 2nd P type metal pad 72, the 3rd P type metal pad 73, the 4th P type metal pad 74, the P type ito thin film layer 3(that is arranged on the chip surface electrically conducting transparent is generally tin indium oxide ITO) on, be the symmetry setting.Because the symmetry of a P type metal pad 71, the 2nd P type metal pad 72, the 3rd P type metal pad 73, the 4th P type metal pad 74, a P type metal pad 71, the 3rd P type metal pad 73 and the first N- type metal pad 51,53 groups of metal pads of the 3rd N-type metal pad be can connect, the 2nd P type metal pad 72, the 4th P type metal pad 74 and the second N- type metal pad 52,54 groups of metal pads of the 4th N-type metal pad also can be connected; Can also connect simultaneously a P type metal pad 71, the 2nd P type metal pad 72, the 3rd P type metal pad 73, the 4th P type metal pad 74 and the first N-type metal pad 51, the second N-type metal pad 52, the 3rd N- type metal pad 53,54 groups of metal pads of the 4th N-type metal pad, this has just improved the flexibility of network-like electrode routing technique of the present utility model.
In the enforcement, described P face metal electrode 6 is the strip electrode that is better than the electric conducting material making of ito thin film by electric conductivity with described N-type metal electrode 4; The electric conducting material that described electric conductivity is better than ito thin film is tin ash (SnO
2) mass percent is more than or equal to 10% ITO material.
In the enforcement, described P face metal electrode 6 can adopt the material identical or different from N-type metal electrode 4.
Referring to accompanying drawing 2.A kind of network-like electrode that is applicable to GaN based LED chip of great power, employing is of a size of 762 microns * 762 microns chip, at first, etches groove 2 until the N layer in GaN epitaxial loayer front, chip is divided into 4 table tops 1: the live width of groove 2 is 23 microns, and the live width of table top 1 is 76 microns.Groove 2 does not thoroughly link to each other quantum well layer, superlattice layer, the P type GaN layer of these 4 table tops 1 on the N-type layer.Among the groove 2 and table top 1 on the depositing metal electrode, in the groove 2 and table top 1 on the metal live width be 15 microns.
The network-like electrode of N-type electrode for being consisted of by N-type metal pad 5 and N-type metal electrode 4, described N-type metal electrode 4 is the network-like strip electrode of interlaced formation, be arranged on the mesa structure of table top 1, buried by silicon dioxide passivation layer and with isolated by table top 1 edge and described groove 2; The diameter of described N-type metal pad 5 is 91 microns, is arranged on the middle position of network-like N-type metal electrode 4.
P type electrode comprises a P type metal electrode 61, the 2nd P type metal electrode 62, the 3rd P type metal electrode 63, the 4th P type metal electrode 64 and a P type metal pad 71, the 2nd P type metal pad 72, the 3rd P type metal pad 73, the 4th P type metal pad 74, wherein, the one P type metal electrode 61 is arranged between a P type metal pad 71 and the 2nd P type metal pad 72, the 2nd P type metal electrode 62 is arranged between the 2nd P type metal pad 72 and the 3rd P type metal pad 73, the 3rd P type metal electrode 63 is arranged between the 3rd P type metal pad 73 and the 4th P type metal pad 74, and the 4th P type metal electrode 64 is arranged between the 4th P type metal pad 74 and the P type metal pad 71.The P type ito thin film layer 3(that described P type metal electrode and P type metal pad all are arranged on the chip surface electrically conducting transparent is generally tin indium oxide ITO) on.
Because the symmetry of a P type metal pad 71, the 2nd P type metal pad 72, the 3rd P type metal pad 73, the 4th P type metal pad 74, a P type metal pad 71, the 3rd P type metal pad 73 and 5 groups of metal pads of N-type metal pad be can connect, the 2nd P type metal pad 72, the 4th P type metal pad 74 and 5 groups of metal pads of N-type metal pad also can be connected; Can also connect simultaneously a P type metal pad 71, the 2nd P type metal pad 72, the 3rd P type metal pad 73, the 4th P type metal pad 74 and 5 groups of metal pads of N-type metal pad, make the flexibility of network-like electrode routing technique of the present utility model.
Other implementation contents can be with reference to the content of embodiment 1.
Referring to accompanying drawing 3.A kind of network-like electrode that is applicable to GaN based LED chip of great power, employing is of a size of 1500 microns * 1500 microns chip, at first, etches groove 2 until the N layer in GaN epitaxial loayer front, chip is divided into 9 table tops 1: the live width of groove 2 is 45 microns, and the live width of table top 1 is 150 microns.Groove 2 does not thoroughly link to each other quantum well layer, superlattice layer, the P type GaN layer of these 9 table tops 1 on the N-type layer.Among the groove 2 and table top 1 on the depositing metal electrode, in the groove 2 and table top 1 on the metal live width be 30 microns.
The network-like electrode of N-type electrode for being consisted of by the first N-type metal pad 51, the second N-type metal pad 52, the 3rd N-type metal pad 53, the 4th N-type metal pad 54 and N-type metal electrode 4, described N-type metal electrode 4 is the network-like strip electrode of interlaced formation, be arranged on the mesa structure of table top 1, buried by silicon nitride passivation and do not contact with the sidewall of groove 2 and table top 1; The diameter of described the first N-type metal pad 51, the second N-type metal pad 52, the 3rd N-type metal pad 53, the 4th N-type metal pad 54 is 180 microns, and selectivity is arranged on four angle ends on the table top 1, also is the Nodes of network-like N-type metal electrode 4.
P type electrode comprises P type metal electrode 6 and a P type metal pad 71, the 2nd P type metal pad 72, the 3rd P type metal pad 73, the 4th P type metal pad 74, the 5th P type metal pad 75, the 6th P type metal pad 76, the 7th P type metal pad 77, the 8th P type metal pad 78, the 9th P type metal pad 79, wherein, P type metal electrode 6 arranges between described nine P type metal pads, forms a network-like P type electrode.The P type ito thin film layer 3(that described network-like P type electrode is arranged on the chip surface electrically conducting transparent is generally tin indium oxide ITO) on.
Because the symmetry of a P type metal pad 71, the 2nd P type metal pad 72, the 3rd P type metal pad 73, the 4th P type metal pad 74, the 5th P type metal pad 75, the 6th P type metal pad 76, the 7th P type metal pad 77, the 8th P type metal pad 78, the 9th P type metal pad 79 can be connected a P type metal pad 71, the 5th P type metal pad 75, the 9th P type metal pad 79 and the second N- type metal pad 52,54 groups of metal pads of the 4th N-type metal pad; Also can connect the 3rd P type metal pad 73, the 5th P type metal pad 75, the 7th P type metal pad 77 and the first N- type metal pad 51,53 groups of metal pads of the 3rd N-type metal pad; Can also connect simultaneously a P type metal pad 71, the 2nd P type metal pad 72, the 3rd P type metal pad 73, the 4th P type metal pad 74, the 5th P type metal pad 75, the 6th P type metal pad 76, the 7th P type metal pad 77, the 8th P type metal pad 78, the 9th P type metal pad 79 and the first N-type metal pad 51, the second N-type metal pad 52, the 3rd N- type metal pad 53,54 groups of metal pads of the 4th N-type metal pad, make the flexibility of network-like electrode routing technique of the present utility model.
Other implementation contents can be with reference to the content of embodiment 1.
The above only is preferred implementation of the present utility model; should be understood that; for those skilled in the art; under the prerequisite that does not break away from the utility model structure; can also make some improvements and modifications, these improvements and modifications also should be considered as in the protection range of the present utility model.
Claims (5)
1. network-like electrode that is applicable to GaN based LED chip of great power, contain substrate, P type electrode and N-type electrode, surface coverage at the P of described substrate type gallium nitride GaN has the ito thin film layer, it is characterized in that, described substrate is divided into some symmetrical table tops (1) by network-like groove (2), described groove (2) is deep into the GaN layer of table top (1) N-type, but the GaN layer of N-type is not done to cut apart, but quantum well layer, the superlattice layer on the N-type GaN layer of the GaN layer of N-type and extension thereof is divided into mutual disjunct part; Groove (2) along table top (1) outer ring forms " L " shape table top; Described P type electrode comprises P type metal electrode (6) and P type metal pad, is arranged on the P type ito thin film layer (3) on table top (1) surface; Described N-type electrode is for comprising the network-like electrode of N-type metal electrode (4) and N-type metal pad (6), described N-type metal electrode (4) is the network-like strip electrode of interlaced formation, be arranged on the mesa structure of table top (1), by silicon dioxide passivation layer or silicon nitride passivation is buried and with isolated by table top (1) edge and described groove (2); Described N-type metal pad (5) is arranged on the Nodes of described network-like N-type metal electrode (4), and is isolated or isolated by described groove (2) by described table top (1) edge and described groove (2).
2. the network-like electrode that is applicable to GaN based LED chip of great power according to claim 1 is characterized in that, described substrate is rectangular configuration, and its length is at least 762 microns with wide.
3. the network-like electrode that is applicable to GaN based LED chip of great power according to claim 1, it is characterized in that, described P type metal electrode (6) is the network-like strip electrode of interlaced formation, be arranged on the ito thin film layer on described table top (1) surface, described P type metal pad (7) is arranged on the Nodes that described network-like P type metal electrode (6) connects.
4. the network-like electrode that is applicable to GaN based LED chip of great power according to claim 1 is characterized in that, described P type metal electrode (6) is made of independent P type metal pad (7), is arranged on the ito thin film layer on described table top (1) surface.
5. the network-like electrode that is applicable to GaN based LED chip of great power according to claim 1, it is characterized in that described N-type metal electrode (4) and N-type metal pad (5) and described P face metal electrode (6) have at least the center inversion symmetry with P face metal pad (7) and wind secondary axial symmetry and four axial symmetries perpendicular to chip center's normal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220206923 CN202712250U (en) | 2012-05-10 | 2012-05-10 | Network-shaped electrode applicable to high-power GaN-based LED chips |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220206923 CN202712250U (en) | 2012-05-10 | 2012-05-10 | Network-shaped electrode applicable to high-power GaN-based LED chips |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202712250U true CN202712250U (en) | 2013-01-30 |
Family
ID=47592522
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220206923 Expired - Fee Related CN202712250U (en) | 2012-05-10 | 2012-05-10 | Network-shaped electrode applicable to high-power GaN-based LED chips |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202712250U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709432A (en) * | 2012-05-10 | 2012-10-03 | 施科特光电材料(昆山)有限公司 | Network-shaped electrode applicable to high-power GaN-based LED chips |
| CN105742418A (en) * | 2016-03-18 | 2016-07-06 | 华灿光电股份有限公司 | Light-emitting diode chip and preparation method thereof |
| CN111900152A (en) * | 2019-05-06 | 2020-11-06 | 深圳第三代半导体研究院 | Integrated unit diode chip |
-
2012
- 2012-05-10 CN CN 201220206923 patent/CN202712250U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709432A (en) * | 2012-05-10 | 2012-10-03 | 施科特光电材料(昆山)有限公司 | Network-shaped electrode applicable to high-power GaN-based LED chips |
| CN105742418A (en) * | 2016-03-18 | 2016-07-06 | 华灿光电股份有限公司 | Light-emitting diode chip and preparation method thereof |
| CN111900152A (en) * | 2019-05-06 | 2020-11-06 | 深圳第三代半导体研究院 | Integrated unit diode chip |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102709432A (en) | Network-shaped electrode applicable to high-power GaN-based LED chips | |
| CN103151447B (en) | A kind of double-side diode structure and preparation method thereof | |
| CN202712250U (en) | Network-shaped electrode applicable to high-power GaN-based LED chips | |
| CN103296166B (en) | Light emitting diode assembly and flip chip type light emitting diode packaging assembly | |
| CN103022070B (en) | A kind of large scale LED chip with novel light-emitting cellular construction | |
| CN201282152Y (en) | Center circumambient shape GaN-based LED chip electrode | |
| CN102800776A (en) | Snowflake-shaped LED (Light-Emitting Diode) electrode structure | |
| CN204216064U (en) | A kind of light-emitting diode | |
| CN208045485U (en) | A kind of flip LED chips | |
| CN204029846U (en) | A kind of novel light-emitting diode | |
| CN201340857Y (en) | High-brightness light-emitting diode | |
| CN104465919B (en) | Light-emitting diode and manufacturing method thereof | |
| CN202405304U (en) | LED chip structure for improving current transmission blocking | |
| CN201918385U (en) | High-power GaN (gallium nitride) based light emitting diode | |
| CN202712178U (en) | Stereoscopic light-emitting device composed of upside-down mounted light-emitting unit arrays | |
| CN102142499A (en) | LED (light emitting diode) wafer with evenly distributed current | |
| CN205016552U (en) | Bluish -green emitting diode chip | |
| CN201266611Y (en) | Tree-shaped GaN-based LED chip electrode | |
| CN102544048A (en) | High-power GaN-base light-emitting diode and manufacturing method thereof | |
| CN205723602U (en) | Flip LED chips is hindered on a kind of anti-top | |
| CN205231096U (en) | Invert bluish -green emitting diode chip | |
| CN201985157U (en) | Light-emitting diode (LED) wafer with uniform current distribution | |
| CN105355744B (en) | A kind of upside-down mounting blue green LED chip | |
| CN201927606U (en) | Light emitting diode with electrostatic protection | |
| CN202034407U (en) | Led chip structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130130 Termination date: 20160510 |