TW201901987A - Light-emitting element - Google Patents

Abstract

A light-emitting element comprises: a light-emitting stack having a first side wall and a second side wall opposite to the first side wall, a light emitting surface and a contacting surface opposite to the light emitting surface, wherein the first side wall and the second side wall connect the light emitting surface and the contacting surface; an electrode having a width on the light emitting surface, wherein a distance between the electrode and the first side wall is not greater than about 50 [mu]m; and an insulating layer on the contacting layer, wherein the insulating layer comprises a via hole, and from a view in a stacking direction of the light-emitting stack a distance between the via hole and the electrode is larger than the width.

Description

Light emitting element

The present invention relates to a light emitting element, and more particularly to a light emitting element having an insulating layer.

Optoelectronic components, such as Light-Emitting Diodes (LEDs), have been widely used in optical display devices, traffic signs, data storage devices, communication devices, lighting devices, and medical equipment. In addition, the above-mentioned LED can be combined with other components to form a light-emitting device. FIG. 1 is a schematic diagram of a conventional light-emitting device. As shown in FIG. 1, a light-emitting device 1 includes a secondary carrier 12 having a circuit 14; a solder 16 is located on the secondary carrier 12. 11 is fixed on the sub-carrier 12 and the LED 11 is electrically connected to the circuit 14 on the sub-carrier 12; and an electrical connection structure 18 is used to electrically connect the electrode 15 of the LED 11 and the circuit 14 on the sub-carrier 12; The above-mentioned secondary carrier 12 may be a lead frame or a large-size mosaic substrate.

A light emitting element includes a semiconductor stack with a first side wall, a second side wall opposite to the first side wall, a light emitting surface, and a contact surface opposite to the light emitting surface, the first side wall and the second side wall are connected to the A light emitting surface and the contact surface; an electrode having a width, the electrode being located on the light emitting surface and a straight line distance between the electrode and the first side wall is not greater than about 50 μm; and an insulating layer is located on the contact surface; wherein the insulating layer There is a void, and viewed from the stacking direction of the semiconductor stack, a straight line distance between the void and the electrode is greater than the width.

The embodiments of the present invention will be described in detail and drawn in the drawings, and the same or similar parts will appear in the drawings and descriptions with the same numbers.

FIG. 2A is a schematic top view of a light-emitting element 100 according to an embodiment of the present invention, and FIG. 2B is a schematic cross-sectional view taken along a section line AA ′ in FIG. 2A. As shown in FIG. 2B, a light-emitting element 100 has a substrate 20, a conductive adhesive layer 21 on the substrate 20, a reflective structure 22 on the conductive adhesive layer 21, and a transparent conductive structure 23 on the reflective structure 22. An insulating layer 24 is located on the transparent conductive structure 23 and has a void 3. A semiconductor stack 2 is located on the insulating layer 24. The semiconductor stack 2 includes a window layer 29 on the insulating layer 24 and contacts the transparent conductive structure 23 through the pores 3 of the insulating layer 24. The semiconductor stack 2 also includes a light-emitting stack 25 formed on the window in a stacking direction. Above the layer 29, the light emitting stack 25 has a light emitting surface T, and the light emitting surface T may be a non-flat surface, and the preferred light emitting surface T has an average roughness of about 0.1 μm to 2 μm, but the present invention Without being limited thereto, for example, in another embodiment, the light emitting surface T may be a plane. In this embodiment, the light-emitting element 100 further includes a first electrode 27 located above the light-emitting stack 25 and a second electrode 28 located below the substrate 20. The light-emitting stack 25 has a first semiconductor layer 251, a second semiconductor layer 253, and an active layer 252 sandwiched between the first semiconductor layer 251 and the second semiconductor layer 253, wherein the second semiconductor layer 253 is located at the first Between the electrode 27 and the active layer 252. In addition, in this embodiment, the light-emitting element 100 may further include an electrical contact layer 26 between the first electrode 27 and the second semiconductor layer 253. The electrical contact layer 26 is patterned on a part of the light-emitting stack 25 and The light emitting surface T is not covered. Specifically, in this embodiment, a portion of the second semiconductor layer 253 contacts the electrical contact layer 26, and the remaining portion of the second semiconductor layer 253 is not covered by the electrical contact layer 26, but the present invention is not limited thereto. In another embodiment, the light emitting element 100 may not have the electrical contact layer 26.

In one embodiment, the light-emitting element 100 can be connected to an external device through the first electrode 27 and the second electrode 28 in a soldering or wire bonding manner, such as being connected to a packaging sub-board or a printed circuit board. The material of the first electrode 27 or the second electrode 28 includes a transparent conductive material or a metal material, wherein the transparent conductive material includes indium tin oxide (ITO), indium zinc oxide (IZO), indium oxide (InO), tin oxide (SnO), Cadmium tin oxide (CTO), antimony tin oxide (ATO), zinc aluminum oxide (AZO), zinc tin oxide (ZTO), zinc gallium oxide (GZO), indium tungsten oxide (IWO), zinc oxide (ZnO), or graphene (Graphene), metal materials include aluminum (Al), chromium (Cr), copper (Cu), tin (Sn), gold (Au), nickel (Ni), titanium (Ti), platinum (Pt), lead (Pb ), Zinc (Zn), cadmium (Cd), antimony (Sb), cobalt (Co), germanium (Ge), palladium (Pd) or an alloy of the above materials.

As shown in FIG. 2A and FIG. 2B, in this embodiment, the semiconductor stack 2 has a sidewall S1, a sidewall S2 with respect to the sidewall S1, a sidewall S3, and a sidewall S4 with respect to the sidewall S3, wherein the sidewalls S3, S4 Connect the sidewalls S1 and S2. The first electrode 27 has a current injection portion 271 and an extension portion 272 directly connected to the current injection portion 271. The current injection portion 271 can be connected to an external device by welding or wire bonding and introduce current, and the extension portion 272 diffuses the current to emit light. The area of the stack 25 that is not covered by the current injection portion 271. Preferably, the current injection portion 271 has a maximum width W1 of not more than about 120 μm, and the extension portion 272 has a width W3 of not more than about 10 μm, but the present invention is not limited thereto. As shown in FIG. 2B, in this embodiment, The thickness of the current injection portion 271 and the extension portion 272 are different. The thickness of the current injection portion 271 is greater than the thickness of the extension portion 272. The thickness of the current injection portion 271 and the extension portion 272 is between about 1 μm and 10 μm. In the embodiment, the current injection portion 271 and the extension portion 272 have the same thickness (not shown in the figure), and the thickness of the current injection portion 271 and the extension portion 272 is also about 1 μm to 10 μm (does not match the figure? In the invention (When changing the manuscript, the thickness is changed). In this embodiment, the current injection part 271 is close to the side wall S1 and far from the side wall S2. More specifically, there is a shortest distance d1 between the current injection part 271 and the side wall S1, and there is a distance between the current injection part 271 and the side wall S2. The shortest distance d2, wherein the ratio of the distance d1 to the distance d2 is between about 1% and 80%, and preferably between about 5% and 70%. In one embodiment, the distance d1 may be between about 10 μm and 50 μm, the distance d2 may be between about 150 μm and 200 μm, and the ratio between the distance d1 and the distance d2 is between about 5% and 67%. As shown in FIG. 2A, in this embodiment, the extension portion 272 may include a plurality of extension electrodes 272a, 272b, 272c, and 272d to improve the uniformity of current diffusion in the second semiconductor layer 253, where the extension electrodes 272a, 272b , 272c, 272d are not in direct contact with each other, the extension electrodes 272b, 272c are surrounded by the extension electrodes 272a, 272d, the extension electrodes 272a, 272b are adjacent and arranged in parallel with the side walls S2, S4, and the extension electrodes 272c, 272d are adjacent and Aligned in parallel with the sidewalls S1 and S3, the extension electrodes 272a, 272b and 272c, 272d are symmetrically arranged on both sides of the diagonal BB ', and the extension electrodes 272a, 272b, 272c, and 272d all have approximately right-angled turning points at Diagonal CC '. As shown in FIG. 2B, the electrical contact layer 26 is only located below the extension portion 272, is covered or surrounded by the extension portion 272, and is not exposed outside the extension portion 272. The electrical contact layer 26 is formed of a semiconductor material, such as gallium arsenide (GaAs) or gallium nitride (GaN), and the electrical contact layer 26 and the second semiconductor layer 253 can be both p-type semiconductors after doping elements, for example, Doped carbon (Si), magnesium (Mg), or zinc (Zn), or the same n-type semiconductor, such as doped antimony (Te) or carbon (C), where the doping concentration of the electrical contact layer 26 is greater than Two semiconductor layers 253, so the contact resistance between the electrical contact layer 26 and the first electrode 27 can be smaller than the contact resistance between the second semiconductor layer 253 and the first electrode 27 to form a relatively low resistance ohmic contact, such as an electrical contact layer The contact resistance between 26 and the extension portion 272 of the first electrode 27 may be less than 10 ^-4 Ω-cm, so that the equivalent resistance between the extension portion 272 and the second semiconductor layer 253 can be reduced, and the positive polarity of the light-emitting element 100 can be reduced. Directional voltage (Vf). In one embodiment, a portion of the current injection portion 271 and the extension portion 272 that does not cover the electrical contact layer 26 and directly contacts the second semiconductor layer 253 may form a Schottky contact with the second semiconductor layer 253.

The material of the active layer 252 includes a III-V compound material, such as Al _p Ga _q In _(1-pq) P, which emits infrared, red, orange, yellow, or amber light, where 0 £ p, q £ 1, Or Al _x In _y Ga _(1-xy) N that emits ultraviolet, blue, or green light, where 0 £ x, y £ 1. The first semiconductor layer 251 can provide carriers having different polarities from the second semiconductor layer 253 after doping elements, such as holes or electrons. The first semiconductor layer 251 can be a p-type semiconductor, such as doped carbon (Si ), Magnesium (Mg) or zinc (Zn), or may be an n-type semiconductor, such as doped antimony (Te) or carbon (C). The light-emitting surface T of the second semiconductor layer 253 (different from the light-emitting surface T described above? Missing modification) can be a rough surface to increase the chance of the light emitted by the light-emitting stack 25 to diffuse and emit light, thereby improving the light-emitting efficiency of the light-emitting element 100. . The active layer 252 may include a single heterostructure (SH), a double heterostructure (DH), a bilateral double heterostructure (DDH), a multiple quantum well structure (MQW), or a quantum dot (QD). The conductivity type of the window layer 29 may be the same as that of the first semiconductor layer 251, but the sheet resistance of the window layer 29 is lower than that of the first semiconductor layer 251, and is transparent to the light emitted from the active layer 252. The material of the window layer 29 includes a transparent oxide or a semiconductor material, wherein the transparent oxide includes indium tin oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin oxide (CTO), antimony tin oxide (ATO) , Zinc aluminum oxide (AZO), zinc tin oxide (ZTO), gallium zinc oxide (GZO), indium tungsten oxide (IWO), zinc oxide (ZnO), or indium zinc oxide (IZO); semiconductor materials include aluminum gallium arsenide ( AlGaAs), gallium nitride (GaN), or gallium phosphide (GaP).

As shown in FIG. 2B, the insulation layer 24 is in contact with the window layer 29 and has a hole 3 to expose the window layer 29. In one embodiment, the transmittance of the insulating layer 24 to light emitted from the active layer 252 may be not less than about 90%. In an embodiment, the refractive index of the insulating layer 24 may be smaller than the refractive index of the window layer 29, and the refractive index of the insulating layer 24 is smaller than the refractive index of the window layer 29 by at least about 0.5 or more, so that a total reflection is formed between the insulating layer 24 and the window layer 29. (TIR) interface, which can increase the probability of reflecting the light emitted from the light emitting stack 25 and improve the light output efficiency. In one embodiment, the insulating layer 24 may be formed of a non-oxidizing material having a refractive index between about 1.3 and 1.4, such as a Group II compound, a Group IV compound, or a Group VII compound. The non-oxidizing material may include a compound having fluorocarbon. bond, for example, a compound C _x F _y, or a compound of the formula magnesium fluoride MgF _x, for example, MgF _2. In one embodiment, the insulating layer 24 may be formed of an oxide or nitride having a refractive index between about 1.4 and 1.8, such as SiO _x or SiN _x . In one embodiment, the thickness of the insulating layer 24 is between about 20 nm and 2 μm, and preferably between about 100 nm and 300 nm.

In one embodiment, when the insulating layer 24 includes a fluoromagnesium compound (MgF ₂ ), a lift-off process may be performed to pattern the insulating layer 24 to form the pores 3. In an embodiment, when the insulating layer 24 includes a fluorocarbon or an oxide, the insulating layer 24 may be patterned to form the pores 3 by a wet etching process, wherein the etching solution includes a buffer oxide etching solution (BOE) or hydrofluoride. Acid (HF). As shown in FIG. 2A, in this embodiment, the pore 3 includes a main pore 31 and a plurality of extended pores 32a, 32b connected to the main pore 31, but the present invention is not limited thereto. For example, in another embodiment, the main pore 3 The aperture 31 can be separated from the plurality of extended apertures 32a, 32b. In this embodiment, through the arrangement of the aperture 3 and the first electrode 27, the current driving the light emitting element 100 can be transmitted between the main aperture 31, the plurality of extended apertures 32a, 32b and The current is injected between the current injection portion 271 and the extension electrodes 272a, 272b, 272c, and 272d. In one embodiment, the main pore 31 has a maximum width W2 (the drawing is W3? Wrong) is between about 20 μm and 100 μm, and the extended pores 32 a and 32 b have a minimum width W4 between about 1 μm and 20 μm. As shown in FIG. 2A, in this embodiment, the main aperture 31 and the current injection portion 271 are substantially disposed on the diagonal line BB ′, and are respectively located at two opposite corners of the light emitting element 100. In one embodiment, there is a shortest distance d3 between the main aperture 31 and the side wall S2, and a shortest distance d4 between the main aperture 31 and the side wall S1. The ratio of the distance d3 to the distance d4 is about 1% to 80. %, Preferably between 5% and 70%. In this embodiment, the distance d3 is between about 10 μm and 50 μm, the distance d4 is between about 150 μm and 200 μm, and the ratio between the distance d3 and the distance d4 is between about 5% and 67%. In one embodiment, the extension apertures 32a are arranged in parallel with the sidewalls S2 and S4 and the distance between the sidewalls S2 and S4 is between about 10 μm and 50 μm. The extension apertures 32b are arranged in parallel with the sidewalls S1 and S3 and parallel to the sidewalls S1 and S3. The distance between them is between 10 μm and 50 μm. In this embodiment, the extension apertures 32a, 32b are not in direct contact with each other, and the extension apertures 32a, 32b are closer to the sidewalls S2, S4, and S1, S3 than the extension electrodes 272a, 272b, 272c, and 272d, respectively; the extension apertures 32a, 32b are respectively located at Both sides of the diagonal line BB 'are arranged approximately symmetrically; the extension apertures 32a and 32b each have a substantially right-angled turning portion, and are located on the same diagonal line CC' as the right-angled turning portion of the extension electrodes 272a, 272b, 272c, and 272d; the extension The apertures 32a, 32b and the extension electrodes 272a, 272b, 272c, and 272d may be substantially parallel to each other. In this embodiment, as shown in FIG. 2B, in the stacking direction of the light-emitting stack 25, the pores 3 in the light-emitting element 100 do not overlap with the first electrode 27 and the electrical contact layer 26. In other words, the insulating layer 24 is preferred. The ground is patterned and disposed directly below the electrical contact layer 26 and the first electrode 27. In addition, as shown in FIGS. 2A and 2B, in the direction A parallel to the light emitting surface T, between the first electrode 27 and the aperture 3 It has a straight line distance d5, preferably the straight line distance d5 is not less than the maximum width of the current injection portion 271 or not less than about 50% of the length of the diagonal line BB '.

The transparent conductive structure 23 may be transparent to the light emitted by the light-emitting stack 25, and may increase the ohmic contact with the window layer 29 or the reflective structure 22 and current conduction and diffusion; as shown in FIG. 2B, this embodiment The medium transparent conductive structure 23 has a first transparent conductive layer 230 on the reflective structure 22 and a second transparent conductive layer 232 between the insulating layer 24 and the first transparent conductive layer 230. For example, in one embodiment, the transparent conductive structure 23 may include a single transparent conductive layer. In this embodiment, the second transparent conductive layer 232 can conformally cover the insulating layer 24 and the aperture 3 and directly contact the window layer 29 through the aperture 3, and the first transparent conductive layer 230 covers the second transparent conductive layer 232. on. In one embodiment, the thickness of the second transparent conductive layer 232 may be between about 1 nm and 1 μm, preferably between about 10 nm and 100 nm or between about 1 nm and 20 nm. In an embodiment, the thickness of the first transparent conductive layer 230 may be between about 10 nm and 1000 nm, and preferably between about 50 nm and 500 nm. In this embodiment, the thickness of the second transparent conductive layer 232 may be smaller than that of the insulating layer 24, and the thickness of the first transparent conductive layer 230 is not smaller than that of the insulating layer 24. A surface 230a of the first transparent conductive layer 230 opposite to the pore 3 may be a flat surface, and the average roughness of the surface 230a is preferably not greater than about 2 nm. In another embodiment, preferably, the thickness of the insulating layer 24 may not be greater than about 1/5 of the thickness of the transparent conductive structure 23, or the thickness of the transparent conductive structure 23 may be not less than about 100 nm or more of the thickness of the insulating layer 24. When the conductive structure 23 is subjected to a grinding process to planarize the surface of the transparent conductive structure 23 that is in contact with the reflective structure 22, excessive damage to the insulating layer 24 can be avoided.

As shown in FIG. 2B, the transparent conductive structure 23 has a first contact upper surface 231 in contact with the window layer 29, and the insulating layer 24 has a second contact upper surface 241 in contact with the window layer 29, wherein the first contact upper surface 231 and The second contact upper surface 241 is located substantially at the same horizontal plane. From the top view of the light emitting element 100 in FIG. 2A, in this embodiment, the percentage of the surface area of the first contact upper surface 231 to the sum of the surface areas of the first contact upper surface 231 and the second contact upper surface 241 is approximately 10% to 50%, but the present invention is not limited to this. For example, in another implementation, the surface area of the first contact upper surface 231 is relative to the sum of the surface areas of the first contact upper surface 231 and the second contact upper surface 241. The percentage may preferably be between about 12.5% and 25%. In an embodiment, the second contact upper surface 241 may be a rough surface to scatter the light emitted from the light emitting stack 25 to improve the light emitting efficiency of the photovoltaic element 100.

The material of the transparent conductive structure 23 may include, but is not limited to, indium tin oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin oxide (CTO), antimony tin oxide (ATO), zinc aluminum oxide (AZO) , Zinc tin oxide (ZTO), gallium zinc oxide (GZO), indium tungsten oxide (IWO), zinc oxide (ZnO), gallium phosphide (GaP), indium cerium oxide (ICO), indium tungsten oxide (IWO), Indium titanium (ITiO), indium zinc oxide (IZO), indium gallium oxide (IGO), gallium aluminum zinc oxide (GAZO), graphene, or a combination of the above materials. In an embodiment, the materials of the first transparent conductive layer 230 and the second transparent conductive layer 232 may be different, or the materials of the first transparent conductive layer 230 and the second transparent conductive layer 232 are different from each other by at least one constituent element. For example, the material of the first transparent conductive layer 230 is indium zinc oxide (IZO), which has a refractive index of about 2.0 to 2.2, and the material of the second transparent conductive layer 232 is indium tin oxide (ITO), which has a The refractive index is between 1.8 and 2.0.

In this embodiment, the refractive index of the first transparent conductive layer 230 is greater than the refractive index of the second transparent conductive layer 232, and the refractive index of the second transparent conductive layer 232 is greater than the refractive index of the insulating layer 24, that is, the first insulating layer 24, the first The refractive indices of the two transparent conductive layers 232 and the first transparent conductive layer 230 increase along the direction of the light-emitting stack 25 toward the reflective structure 22, so that when the light is reflected by the reflective structure 22 and proceeds toward the light-emitting stack 25, light can be reduced in the insulating layer. The probability of total reflection occurring between 24 and the second transparent conductive layer 232 and between the second transparent conductive layer 232 and the first transparent conductive layer 230. Therefore, in this embodiment, even if the light emitted from the light-emitting stack 25 is not reflected by the internal total reflection (TIR) interface between the insulating layer 24 and the window layer 29, the light can be reflected by the transparent conductive structure 23 and the reflective structure. The omnidirectional mirror (ODR) formed by 22 reflects and is smoothly emitted from the light emitting surface T and the sidewalls S1 to S4, so as to improve the light emitting efficiency of the light emitting element 100.

The reflective structure 22 has a reflectivity of not less than 90% for the light emitted from the light-emitting stack 25, and the material of the reflective structure 22 may include a metal material. The metal material includes, but is not limited to, copper (Cu), aluminum (Al), and tin. (Sn), gold (Au), silver (Ag), lead (Pb), titanium (Ti), nickel (Ni), platinum (Pt), tungsten (W), or an alloy of the above materials. The reflective structure 22 includes a reflective layer 226, a reflective adhesive layer 224 under the reflective layer 226, a barrier layer 222 under the reflective adhesive layer 224, and an ohmic contact layer 220 under the barrier layer 222. The layer 226 can reflect the light from the light-emitting stack 25. The reflective adhesive layer 224 bonds the reflective layer 226 and the barrier layer 222. The barrier layer 222 can prevent the material of the reflective layer 226 from diffusing to the ohmic contact layer 220 to avoid damaging the reflective layer 226. Structure, the reflectivity of the reflective layer 226 decreases, and the ohmic contact layer 220 forms an ohmic contact with the conductive adhesive layer 21 below. The conductive adhesive layer 21 is used to connect the substrate 20 and the reflective structure 22, and may be a single layer or a plurality of sublayers (not shown). The material of the conductive adhesive layer 21 may include a transparent conductive material or a metal material. The transparent conductive material includes but Not limited to indium tin oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin oxide (CTO), antimony tin oxide (ATO), zinc aluminum oxide (AZO), zinc tin oxide (ZTO), oxide Gallium zinc (GZO), zinc oxide (ZnO), gallium phosphide (GaP), indium cerium oxide (ICO), indium tungsten oxide (IWO), titanium indium oxide (ITiO), indium zinc oxide (IZO), indium gallium oxide (IGO), gallium aluminum zinc oxide (GAZO), graphene (Graphene), or a combination of the above materials. Metal materials include but are not limited to copper (Cu), aluminum (Al), tin (Sn), gold (Au), silver (Ag), lead (Pb), titanium (Ti), nickel (Ni), platinum (Pt), tungsten (W), or alloys of the foregoing materials.

The substrate 20 may be used to support the light-emitting stack 25 and other layers or structures thereon, and the material may include a conductive material. Conductive materials include but are not limited to copper (Cu), aluminum (Al), molybdenum (Mo), tin (Sn), zinc (Zn), cadmium (Cd), nickel (Ni), cobalt (Co), diamond-like carbon films (Diamond Like Carbon (DLC)), graphite (Graphite), carbon fiber (Carbon fiber), metal matrix composite (MMC), ceramic matrix composite (CMC), silicon (Si), phosphating Iodine (IP), zinc selenide (ZnSe), gallium arsenide (GaAs), silicon carbide (SiC), gallium phosphide (GaP), gallium phosphorus arsenide (GaAsP), indium phosphide (InP), lithium gallate (LiGaO2) or lithium aluminate (LiAlO2).

3A to 3D are schematic top views of light emitting elements 200 to 500 in other embodiments. As shown in FIG. 3A, the difference between the light-emitting element 200 and the aforementioned light-emitting element 100 includes that the pores 3 of the light-emitting element 200 only include extended apertures 32a, 32b; as shown in FIG. 3B, the differences between the light-emitting element 300 and the aforementioned light-emitting element 100 include The extension aperture 32a of the light-emitting element 300 (the guide line of 32a in FIG. 3B is not clear and must be adjusted) only extends along the sidewall S2 to the sidewall S4, and the extension aperture 32b extends only along the sidewall S3 to the sidewall S1; as shown in FIG. 3C The difference between the light-emitting element 400 and the aforementioned light-emitting element 100 includes that the pores 3 of the light-emitting element 400 only include extension apertures 32a, 32b, wherein the extension aperture 32a extends only along the sidewall S2 to the sidewall S4, and the extension aperture 32b extends only along the sidewall S3 toward the sidewall S1. In addition, the first electrode 27 further includes extension electrodes 272e and 272f directly connected to the current injection portion 271 and parallel to the side walls S4 and S1, respectively. Among them, the extension electrodes 272e and 272f and the side walls S4 and S1 have a shortest straight line distance between about 10 μm to 50 μm; as shown in FIG. 3D, the difference between the light-emitting element 500 and the aforementioned light-emitting element 400 includes that the first electrode 27 of the light-emitting element 500 includes only a current injection portion 271 and an extension electrode 272 b, 272c, 272e, 272f.

FIG. 4 is a schematic exploded view of a lighting device 4. The lighting device 4 has a lamp cover 41, an optical element 42 placed in the lamp cover 41, a lighting module 44 under the optical element 42, and a lamp holder 45. The lighting module 44, a connecting portion 47, and an electrical connector 48 are carried. The lamp holder 45 has a heat sink 46, and the connecting portion 47 connects the lamp holder 45 and the electrical connector 48. The optical element 42 may include a lens, a reflective cup, or a light guide element. The lighting module 44 has a carrier 43 and a plurality of the light-emitting elements 40 of any of the foregoing embodiments, which are located on the carrier 43.

FIG. 5 is a schematic diagram of a photovoltaic system 4b. The optoelectronic system 4b includes a base plate 49. A plurality of pixels 40 'are located on the base plate 49 and are electrically connected to the base plate 49. A control module 49' is electrically connected to the base plate 49 to control the plurality of pixels 40 ', of which a plurality of pixels One of the elements 40 'includes one or more light-emitting elements 40b. The light-emitting elements 40b include the structure disclosed in any one of the foregoing embodiments, and each light-emitting element 40b can be individually controlled by the control module 49'. In one embodiment, each pixel 40 'includes a light emitting unit for emitting red light, a light emitting unit for emitting blue light, and a light emitting unit for emitting green light. At least one light emitting unit includes Light emitting element 40b. In one embodiment, the plurality of light emitting elements 40 b on the bottom plate 49 may be placed in a matrix with rows / columns, or a peripheral contour with an asymmetric polygon. In one embodiment, preferably, the distance d between two adjacent pixels 40 'is between 100 μm and 5 mm, or the distance d' between two adjacent light emitting elements 40b is between 100 μm and 500 μm. .

FIG. 6 is a schematic diagram showing a light-emitting unit 4c. The light-emitting unit 4c includes a light-emitting element 40c. The light-emitting element 40c includes the structure disclosed in any of the foregoing embodiments. The two electrical connection terminals 54 and 56 are on the light-emitting element 40c. A wavelength conversion layer 55 covers the light-emitting element 40c. The two electrical connection terminals 54 and 56 are exposed, and the two electrode pads 57 and 58 are respectively formed and connected to the two electrical connection terminals 54 and 56.

It should be noted that the above-mentioned various embodiments are provided to illustrate the present invention, but not to limit the scope of the present invention. Similar or identical elements in the embodiments or elements having the same drawing symbols in different embodiments may have the same chemical or physical characteristics. In addition, elements shown in different embodiments may be combined or replaced with each other as appropriate, and the connection relationship of the elements in one embodiment may also be applied to another embodiment. The above embodiments can be modified in any possible way without departing from the technical principles and spirit of the present invention, which are all covered by the present invention and protected by the scope of patent application described later. this

1‧‧‧light-emitting device

11‧‧‧light-emitting diode

12‧‧‧ times carrier

13, 20‧‧‧ substrate

14‧‧‧circuit

15‧‧‧ electrode

16‧‧‧Solder

18‧‧‧ Electrical connection structure

100, 200, 300, 400, 500‧‧‧ light-emitting elements

2‧‧‧Semiconductor

21‧‧‧ conductive adhesive layer

22‧‧‧Reflective Structure

220‧‧‧ohm contact layer

222‧‧‧Barrier layer

224‧‧‧Reflective Adhesive Layer

226‧‧‧Reflective layer

23‧‧‧ transparent conductive structure

230‧‧‧The first transparent conductive layer

231‧‧‧ the first contact with the upper surface

232‧‧‧Second transparent conductive layer

24‧‧‧ Insulation

241‧‧‧Second contact upper surface

25‧‧‧Light-emitting stack

251‧‧‧First semiconductor layer

252‧‧‧Light-emitting layer

253‧‧‧Second semiconductor layer

254‧‧‧light upper surface

26‧‧‧Electrical contact layer

27‧‧‧first electrode

271‧‧‧Current injection unit

272a, 272b, 272c, 272d, 272e, 272f‧‧‧ extension electrode

28‧‧‧Second electrode

29‧‧‧ window layer

3‧‧‧ porosity

31‧‧‧ main pore

32a, 32b‧‧‧Extended pores

4‧‧‧lighting device

41‧‧‧Shade

42‧‧‧ Optics

43‧‧‧ carrier

44‧‧‧lighting module

45‧‧‧ lamp holder

46‧‧‧heat sink

47‧‧‧ Connection Department

48‧‧‧Electric connector

4b‧‧‧Photoelectric system

49‧‧‧ floor

49’‧‧‧control module

40’‧‧‧ pixels

40b, 40c‧‧‧light-emitting element

d, d’ ‧‧‧ distance

4c‧‧‧Light-emitting unit

54, 56‧‧‧ Electrical connection

55‧‧‧wavelength conversion layer

57, 58‧‧‧ electrode pads

AA’‧‧‧ hatch

BB ’, CC’ ‧‧‧ diagonal

S1, S2, S3, S4‧‧‧ sidewall

d1, d2, d3, d4, d5‧‧‧Straight distance

W1, W2, W3, W4‧‧‧Width

FIG. 1 is a schematic structural diagram of a conventional light emitting device;

FIG. 2A is a schematic top view of a light emitting device according to an embodiment of the present invention; FIG.

Figure 2B is a schematic sectional view of Figure 2A along the section line AA ';

3A to 3D are schematic top views of light emitting elements according to different embodiments of the present invention;

FIG. 4 is a schematic exploded view of another embodiment of the present invention;

FIG. 5 is a schematic diagram of a system according to another embodiment of the present invention; FIG.

FIG. 6 is a schematic diagram of a light emitting unit according to another embodiment of the present invention.

Claims (10)

A light emitting element includes: a semiconductor stack having a first side wall, a second side wall opposite to the first side wall, a light emitting surface, and a contact surface opposite to the light emitting surface, the first side wall being connected to the second side wall The light emitting surface and the contact surface; an electrode having a width, the electrode is located on the light emitting surface and a straight line distance between the electrode and the first side wall is not greater than about 50 μm; and an insulation layer is located on the contact surface; wherein the insulation The layer has a void, and viewed from the stacking direction of the semiconductor stack, a straight line distance between the void and the electrode is greater than the width. The light-emitting element according to claim 1, further comprising an electrical contact layer located between the electrode and the semiconductor stack, and viewed from the stacking direction of the semiconductor stack, the electrical contact layer and the pores are mutually exclusive. overlapping. The light-emitting element according to claim 1, further comprising a conductive structure covering a surface of the insulating layer and filling the void to contact the semiconductor stack. The light-emitting element according to claim 1, wherein the refractive index of the insulating layer is not greater than about 1.4. The light-emitting element according to claim 1, wherein viewed from the stacking direction of the semiconductor stack, the light emitting surface further includes a diagonal line, and the straight line distance between the aperture and the electrode is not less than the pair Approximately 50% of the corner length. According to the light emitting element in claim 5, the pore includes a main pore and an extended pore. The width of the main pore is not less than about 20 μm, and the width of the extended pore is not more than about 20 μm. The light-emitting element according to claim 6, wherein the main aperture and the electrode are located on the diagonal line when viewed from the stacking direction of the semiconductor stack. The light-emitting element according to claim 6, wherein the electrode includes an extension electrode, and the extension electrode is substantially parallel to the first side wall or the second side wall. The light-emitting element according to claim 3, wherein the conductive structure includes a transparent conductive material. An optoelectronic system comprising: a base plate; a plurality of pixels; and a control module located on the base plate and electrically connected to the pixels; wherein each of the pixels includes a light-emitting element as described in item 1 of the claim .