CN218602469U - Flip-chip light emitting diode chip - Google Patents
Flip-chip light emitting diode chip Download PDFInfo
- Publication number
- CN218602469U CN218602469U CN202222667023.0U CN202222667023U CN218602469U CN 218602469 U CN218602469 U CN 218602469U CN 202222667023 U CN202222667023 U CN 202222667023U CN 218602469 U CN218602469 U CN 218602469U
- Authority
- CN
- China
- Prior art keywords
- layer
- metal
- metal electrode
- flip
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The application provides a flip-chip light emitting diode chip, includes: the light extraction efficiency of the flip LED chip is greatly improved through the arrangement of the composite reflection layer. Specifically, the composite reflection layer comprises a non-metal reflection layer and a metal reflection layer, and the non-metal reflection layer and the metal reflection layer are sequentially arranged in the vertical direction of the flip LED chip, so that part of light emitted by the active layer can be reflected under the action of the non-metal reflection layer and the metal reflection layer in sequence to be emitted from the substrate side. Moreover, the metal reflecting layer can further improve the reflection efficiency of partial light on the basis of the non-metal reflecting layer.
Description
Technical Field
The application relates to the technical field of semiconductor optoelectronic devices, in particular to a flip-chip light-emitting diode chip.
Background
Compared with conventional Light sources (such as incandescent lamps and fluorescent lamps), light Emitting Diodes (LEDs) have many advantages, such as fast response time, low pollution, high Light efficiency, long lifetime, low power consumption, and small size. Therefore, LEDs have wide applications in many fields, such as signal lamps, backlight sources, automotive lamps, general illumination, lasers, and the like. The flip LED chip has the advantages of low thermal resistance, large current, low packaging cost, close arrangement and the like, the temperature resistance and the reliability of the flip LED chip are better than those of a normally-installed LED chip and a vertical LED chip, the manufacturing cost of the flip LED chip is moderate, the flip LED chip can be used for a light source with high power and high reliability requirements, the flip LED chip is favored by the industry all the time, and the research heat is not reduced so far.
At present, a common flip-chip LED chip mainly includes a substrate, an epitaxial stack (the epitaxial stack includes an N-GaN layer, an active layer, a P-GaN layer, and the like) disposed on the substrate, and a metal electrode located on a side of the epitaxial stack away from the substrate. In order to improve the light extraction efficiency of the flip-chip LED chip, in the prior art, a metal reflective layer is generally disposed between the epitaxial stack and the metal electrode, so that part of light emitted to the metal electrode can be reflected from the light-emitting surface of the substrate under the reflection action of the metal reflective layer.
However, the light extraction efficiency of the conventional flip LED chip is low.
SUMMERY OF THE UTILITY MODEL
The embodiment of the present application provides a flip-chip light emitting diode chip to solve at least one of the above problems.
The embodiment of the application provides a flip-chip light emitting diode chip, includes: a substrate having a first surface; the epitaxial lamination layer comprises an N-GaN layer, a P-GaN layer, an active layer and a conductive hole, wherein the N-GaN layer and the P-GaN layer are sequentially arranged on the first surface in a stacking mode along the direction far away from the substrate, the active layer is located between the N-GaN layer and the P-GaN layer, and the conductive hole penetrates through the P-GaN layer and the active layer respectively so that the N-GaN layer is partially exposed; the transparent conducting layer is arranged on one side, back to the active layer, of the P-GaN layer, and ohmic contact is formed between the transparent conducting layer and the P-GaN layer; the composite reflecting layer comprises a non-metal reflecting layer and a metal reflecting layer, the metal reflecting layer is positioned on one side of the transparent conducting layer, which is back to the P-GaN layer, the non-metal reflecting layer is positioned between the metal reflecting layer and the transparent conducting layer, and the metal reflecting layer is connected with the transparent conducting layer by virtue of a first gap formed by the non-metal reflecting layer; and the metal electrode assembly comprises a first metal electrode and a second metal electrode which are respectively arranged on one side of the metal reflecting layer back to the transparent conducting layer, one of the first metal electrode and the second metal electrode is connected with the metal reflecting layer, and the other of the first metal electrode and the second metal electrode passes through the conducting hole to be contacted with the N-GaN layer.
As a preferred implementation manner of the embodiment of the present application, the non-metal reflective layer is a net structure, and voids in the net structure form the first gap; or, the non-metal reflecting layer is an island-shaped structure, and the first gap is formed by a gap in the island-shaped structure.
As a preferred implementation manner of the embodiment of the present application, the transparent conductive layer is a planar structure; or the transparent conducting layer is a net-shaped structure, and second gaps are formed by gaps in the net-shaped structure; or the transparent conducting layer is an island-shaped structure, and a second gap is formed by a gap in the island-shaped structure.
As a preferred implementation manner of the embodiment of the present application, the transparent conductive layer is a mesh structure, and the voids in the mesh structure form second gaps; or the transparent conductive layer is an island-shaped structure, and a second gap is formed by a gap in the island-shaped structure; the first gap and the second gap are correspondingly arranged, so that the metal reflecting layer respectively penetrates through the first gap and the second gap and is in contact with the P-GaN layer.
As a preferred implementation of the embodiment of the present application, an edge of the non-metal reflective layer can extend along a contour of the epitaxial stack to clad the epitaxial stack.
As a preferred implementation manner of the embodiment of the present application, the flip-chip light emitting diode chip further includes: and the metal protective layer is arranged on the outer side of the metal reflecting layer so as to cover the top surface and the side surface of the metal reflecting layer.
As a preferred implementation manner of the embodiment of the present application, the flip chip light emitting diode chip further includes: the first passivation layer is arranged between the first metal electrode and the metal protection layer, between the second metal electrode and the metal protection layer, and is provided with a first connecting hole, so that the first metal electrode and the second metal electrode can be connected with the metal protection layer and the N-GaN layer.
As a preferred implementation of the embodiments of the present application, the metal electrode assembly further comprises a third metal electrode and a fourth metal electrode; the flip light emitting diode chip further includes: and the second passivation layer is arranged between the planes of the first metal electrode and the second metal electrode and the planes of the third metal electrode and the fourth metal electrode, and is provided with a second connecting hole so that one of the third metal electrode and the fourth metal electrode is connected with the first metal electrode, and the other of the third metal electrode and the fourth metal electrode is connected with the second metal electrode.
As a preferred implementation manner of the embodiment of the present application, the first metal electrode and the second metal electrode each include a first adhesion layer and a first structure layer, and the third metal electrode and the fourth metal electrode each include a second adhesion layer, a second structure layer, and a eutectic layer.
As a preferred implementation manner of the embodiments of the present application, the material of the metal reflective layer is Ag or AL; the non-metal reflecting layer is made of one or more of SiO2, mgF2, mgO, al2O3, hfO2, baF2 or AlF 3.
Due to the adoption of the technical scheme, the beneficial effects obtained by the application are as follows:
the application provides this kind of flip-chip emitting diode chip, sets up through compound reflection stratum and promotes flip-chip LED chip's light extraction efficiency by a wide margin. Specifically, the composite reflecting layer comprises a non-metal reflecting layer and a metal reflecting layer, and the non-metal reflecting layer and the metal reflecting layer are sequentially arranged in the vertical direction of the flip LED chip, so that part of light emitted by the active layer can be reflected under the action of the non-metal reflecting layer and the metal reflecting layer in sequence to be emitted from the side of the substrate. And, because the non-metal reflecting layer is closer to in the active layer than the metal reflecting layer for the non-metal reflecting layer can reflect partial light at first, and greatly reduced metal reflecting layer is to the absorption of this partial light, thereby does benefit to the light extraction efficiency that promotes flip-chip LED chip. In addition, on one hand, the metal reflecting layer can further improve the reflection efficiency of partial light on the basis of the non-metal reflecting layer; on the other hand, through the first clearance of seting up on the nonmetal reflector layer for the metal reflector layer can pass first clearance and directly contact with transparent conducting layer, thereby realizes the electricity between metal reflector layer and the transparent conducting layer and is connected, and then has solved to a great extent and has set up the unable electrically conductive problem of nonmetal reflector layer between metal reflector layer and the transparent conducting layer, has promoted flip-chip LED chip operation process's stability. In conclusion, the scheme provided by the application can enable the flip LED chip to have higher light extraction efficiency on the premise of good operation.
Drawings
Fig. 1 is a cross-sectional view of a flip-chip light emitting diode chip provided in an embodiment of the present application;
fig. 2 is a top view of a flip-chip light emitting diode chip according to an embodiment of the present disclosure.
Description of reference numerals:
100 substrates, 110 first surfaces;
200 epitaxial lamination layers, 210N-GaN layers, 220P-GaN layers, 230 active layers and 240 conductive holes;
300 transparent conductive layer, 310 second gap;
400 composite reflective layer, 410 non-metallic reflective layer, 411 first gap, 420 metallic reflective layer;
500 a metal electrode assembly, 510 a first metal electrode, 520 a second metal electrode, 530 a third metal electrode, 540 a fourth metal electrode;
600 metal protection layer, 610 first passivation layer, 620 second passivation layer.
Detailed Description
In order to make those skilled in the art better understand the technical solutions in the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
At present, the reflective layers in the flip-chip LED chips are generally classified into two types according to the type of materials, one is a metal reflective layer, and the other is a non-metal reflective layer. Since the metal itself has a high absorptivity to light, the metal reflective layer can absorb the light emitted to the surface to a certain extent, so that the light extraction efficiency of the flip LED chip cannot be effectively improved; non-metallic reflective layers, such as DBR reflective layers, are typically constructed of two insulating materials of different refractive indices alternating in an ABAB fashion. In the actual process of manufacturing the flip-chip LED chip, not only the reflection efficiency problem of the reflective layer but also the conductivity problem of the reflective layer need to be considered. For example, when the DBR reflective layer is used as the reflective layer of the flip LED chip, an additional conductive layer is often required to be disposed on the DBR reflective layer, which increases the production cost and the processing difficulty on the one hand, and on the other hand, due to the structural characteristics of the DBR reflective layer itself, the DBR reflective layer has insufficient reflectivity for the wide-angle incident light, so that the wide-angle incident light can not be reflected well, and the light extraction efficiency of the flip LED chip can be affected.
In view of this, referring to fig. 1 and 2, the present embodiment provides a flip light emitting diode chip (hereinafter, referred to as a flip LED chip) including a substrate 100, an epitaxial stack 200, a transparent conductive layer 300, a composite reflective layer 400, and a metal electrode assembly 500.
Wherein the substrate 100 has a first surface 110, the epitaxial stack 200 comprises an N-GaN layer 210 and a P-GaN layer 220 sequentially stacked on the first surface 110 in a direction away from the substrate 100, an active layer 230 between the N-GaN layer 210 and the P-GaN layer 220, and a conductive via 240 respectively penetrating the P-GaN layer 220 and the active layer 230 to partially expose the N-GaN layer 210; the transparent conductive layer 300 is disposed on a side of the P-GaN layer 220 facing away from the active layer 230, and the transparent conductive layer 300 is in ohmic contact with the P-GaN layer 220.
The composite reflective layer 400 includes a non-metal reflective layer 410 and a metal reflective layer 420, the metal reflective layer 420 is disposed on a side of the transparent conductive layer 300 opposite to the P-GaN layer 220, the non-metal reflective layer 410 is disposed between the metal reflective layer 420 and the transparent conductive layer 300, and the metal reflective layer 420 is connected to the transparent conductive layer 300 by a first gap 411 formed by the non-metal reflective layer 410.
The metal electrode assembly 500 includes a first metal electrode 510 and a second metal electrode 520 respectively disposed on a side of the metal reflective layer 420 facing away from the transparent conductive layer 300, one of the first metal electrode 510 and the second metal electrode 520 is connected to the metal reflective layer 420, and the other of the first metal electrode 510 and the second metal electrode 520 is in contact with the N-GaN layer 210 through the conductive via 240.
The substrate 100 in the embodiment of the present application may be made of sapphire (Al 2O 3), silicon (Si), silicon carbide (SiC), etc., and flip chip light emitting diode chips made of substrates of different materials may exhibit different performances. For example, the sapphire substrate has good stability and can be applied to a high-temperature growth process; the mechanical strength is high, and the processing and the cleaning are easy; the production technology is mature, and the prepared photoelectronic device has good quality and the like; the silicon substrate has good thermal conductivity, and the service life of the optoelectronic device can be prolonged; the light-emitting area is larger, and the light-emitting efficiency is higher; the silicon carbide substrate has excellent thermal, mechanical, chemical and electrical properties, can bear higher voltage and higher current, and can reduce the volume and weight of the optoelectronic device. According to different characteristics of the substrates of different materials, those skilled in the art can select a suitable substrate material according to design requirements of different products, which is not limited in the embodiments of the present application.
However, in order to improve the light extraction efficiency of the flip-chip LED chip, the Substrate in the embodiment of the present application may be processed in a Patterned Sapphire Substrate (PSS) manner. The PSS is a mask which is formed by growing on the sapphire substrate 100 and etched by a dry method, then a standard photoetching process is used for etching a pattern on the mask, an ICP etching technology is used for etching the sapphire, the mask is removed, and then a GaN material is grown on the mask, so that the longitudinal epitaxy of the GaN material is changed into the transverse epitaxy. In this way, on one hand, the dislocation density of the GaN epitaxial material can be effectively reduced, so that the non-radiative recombination of the active layer 230 is reduced, the reverse leakage current is reduced, and the service life of the flip-chip LED chip is prolonged; on the other hand, light emitted from the active region is scattered for multiple times through the interface between the GaN and the sapphire substrate 100, so that the emergence angle of total reflection light is changed, the probability of emergence of the light of the flip LED from the sapphire substrate 100 is increased, and the light extraction efficiency is improved.
In addition, the active layer 230 in the embodiment of the present application is used as a light emitting region, and a portion of light emitted from the active layer 230 directly exits from the first surface 110 of the substrate 100, another portion of light is emitted to a side opposite to the first surface 110, that is, a side where the composite reflective layer 400 is located, and another portion of light is emitted from both sides of the active layer 230. Wherein, part of the light emitted to the composite reflective layer 400 is re-reflected by the composite reflective layer 400 to the first surface 110, and the light emitted from both sides of the active layer 230 can be reflected to the substrate 100 by the non-metal reflective layer 410 extending to the bottom of the epitaxial stack 200, and thus also emitted from the first surface 110.
In addition, the size of the conductive hole 240 formed in the epitaxial stacked layer 200 is not limited in the embodiment of the present application, and for example, the size of the conductive hole 240 may be determined according to the relative sizes of the metal electrode assembly 500 and the non-metal reflective layer 410.
The flip LED chip provided by the embodiment of the application greatly improves the light extraction efficiency of the flip LED chip through the arrangement of the composite reflection layer 400. Specifically, the composite reflective layer 400 includes a non-metal reflective layer 410 and a metal reflective layer 420, and the non-metal reflective layer 410 and the metal reflective layer 420 are sequentially arranged in the vertical direction of the flip LED chip, so that a part of light emitted from the active layer 230 can be sequentially reflected under the action of the non-metal reflective layer 410 and the metal reflective layer 420 to be emitted from the substrate 100 side. And, because non-metal reflecting layer 410 is closer to active layer 230 than metal reflecting layer 420 for non-metal reflecting layer 410 can reflect partial light at first, and greatly reduced metal reflecting layer 420 is to the absorption of this partial light, thereby does benefit to the light extraction efficiency that promotes flip-chip LED chip. In addition, the metal reflective layer 420 can further improve the reflection efficiency of partial light on the basis of the non-metal reflective layer 410; on the other hand, through the first clearance 411 of seting up on the nonmetal reflecting layer 410 for metal reflecting layer 420 can pass first clearance 411 and directly contact with transparent conducting layer 300, thereby realize the electricity between metal reflecting layer 420 and the transparent conducting layer 300 and be connected, and then solved to a great extent and set up the unable electrically conductive problem of nonmetal reflecting layer 410 between metal reflecting layer 420 and transparent conducting layer 300, promoted flip-chip LED chip operation process's stability. To sum up, the scheme provided by the embodiment of the application can enable the flip LED chip to have higher light extraction efficiency on the premise of good operation.
In some embodiments, referring to fig. 2, the non-metal reflective layer 410 may be a mesh structure, and the first gap 411 is formed by a gap in the mesh structure; alternatively, the non-metal reflective layer 410 is an island structure, and a first gap 411 is formed by a gap in the island structure.
The specific structure of the non-metal reflective layer 410 may be a mesh structure or an island structure, or may be a planar structure with voids, and the like, as long as the voids are present in the non-metal reflective layer 410, which is not limited in this embodiment.
In addition, with respect to the material, size, processing temperature, and the like of the non-metallic reflective layer 410, the following examples may be referred to:
the first example is as follows: the non-metallic reflective layer 410 can be made of a thin film with low reflectivity, such as SiO 2 、MgF 2 、MgO、Al 2 O 3 、HfO 2 、BaF 2 、AlF 3 Etc., and the thickness of the low-reflectance film may be 50nm to 5000nm.
Example two: the non-metal reflective layer 410 may be a DBR reflective layer, wherein the DBR reflective layer may be formed by overlapping a high-reflectivity film and a low-reflectivity film, and the high-reflectivity film may be made of, for example, ta 2 O 5 Etc., the material of the low-reflectance thin film may be, for example, siO 2 、MgF 2 、MgO、Al 2 O 3 、HfO 2 、BaF 2 、AlF 3 And the like. And the number of the thin film layers in the DBR reflecting layer can be not less than three, the thickness of each thin film layer can be 100nm-6000nm, and the processing temperature of the DBR reflecting layer can be between 100 ℃ and 300 ℃.
Alternatively, the material of the metal reflective layer 420 in the embodiment of the present application may be Ag or AL, etc. In addition, in order to protect the metal reflective layer 420 to a certain extent, a metal protective layer (not shown) may be disposed below the metal reflective layer 420, and the metal reflective layer 420 and the metal protective layer may be connected by a metal adhesive layer (not shown). The metal protective layer may be made of Ni, tiW, ti, pt, or the like, and the metal adhesion layer may be made of Cr, ti, ni, or the like, and the materials of the metal protective layer and the metal adhesion layer are not limited in this embodiment. Also, regarding the size of the metal reflective layer 420, it can be selected reasonably according to the design requirements of the product, for example, the thickness of the metal reflective layer 420 can be set to be not less than 80nm, etc.
In some embodiments, with continued reference to fig. 2, the transparent conductive layer 300 may be a planar structure; or the transparent conductive layer 300 is a mesh structure, and the second gap 310 is formed by the gap in the mesh structure; or the transparent conductive layer 300 is an island structure, and a second gap 310 is formed by a gap in the island structure.
The specific structure of the transparent conductive layer 300 may be provided with the second gap 310 or without the second gap 310. Since the transparent conductive layer 300 is made of ITO, znO, or the like, and the transparent conductive layer 300 itself has conductivity, it is possible to connect the P-GaN layer 220 and the metal reflective layer 420 without forming the second gap 310.
The transparent conductive layer 300 may be a planar structure, a mesh structure, or an island-like structure without the second gap 310 as described above, or may be a planar structure with the second gap 310, or a planar structure with a protrusion, and the like, which is not limited in the embodiment of the present invention. And, the transparent conductive layer 300 is in ohmic contact with the P-GaN layer 220, and the arrangement mode enables the contact surface between the transparent conductive layer 300 and the P-GaN layer 220 to have a resistance value far smaller than the self resistance of a semiconductor, and has good thermal stability and oxidation resistance.
In some embodiments, when the transparent conductive layer 300 has the second gap 310, the first gap 411 and the second gap 310 may be disposed correspondingly such that the metal reflective layer 420 passes through the first gap 411 and the second gap 310, respectively, and contacts the P-GaN layer 220.
Further, the edge of the non-metallic reflective layer 410 can extend along the profile of the epitaxial stack 200 to encapsulate the epitaxial stack 200. Extend the edge of non-metallic reflection layer 410, the reflection scope of non-metallic reflection layer 410 can be enlarged to this kind of mode of setting up to make it not only can reflect the light of one side mutually back to the back of the body with first surface 110 from 230 directive of active layer, can also reflect the light that jets out from 230 both sides of active layer, promote the reflection efficiency of non-metallic reflection layer 410 greatly, and then do benefit to the improvement of LED chip light extraction efficiency.
In some embodiments, referring to fig. 1, the flip LED chip may further include a metal protection layer 600, and the metal protection layer 600 is disposed outside the metal reflection layer 420 to cover the top surface and the side surface of the metal reflection layer 420. It can be understood that the metal protection layer 600 has a similar effect to that of the metal protection layer, and both of them have a certain protection effect on the metal reflection layer 420. Wherein, the material of the metal protection layer 600 may be one or more of AL, TI, NI, PT, AU, CR or TIW, and when the material of the metal protection layer 600 is the same as the material of the metal reflective layer 420, the metal protection layer 600 is more similar to the thickening of the metal reflective layer 420 in terms of appearance, for example, the metal protection layer 600 may be considered to be formed by extending the outline of the metal reflective layer 420 outward by 1 μm-20 μm; when the material of the metal protection layer 600 is different from the material of the metal reflection layer 420, the metal protection layer 600 may be a layer of protection metal attached to the surface of the metal reflection layer 420, and the thickness thereof may be 1 μm to 20 μm, and the like, and the application is not limited to the material and size of the metal protection layer 600.
In some embodiments, the flip LED chip may further include a first passivation layer 610, the first passivation layer 610 is disposed between the first metal electrode 510 and the metal protection layer 600, and the second metal electrode 520 and the metal protection layer 600, and the first passivation layer 610 is opened with a first connection hole (not labeled) so that the first metal electrode 510 and the second metal electrode 520 can be connected with the metal protection layer 600 and the N-GaN layer 210. The position of the first connection hole may include a position corresponding to the position of the conductive hole 240, such that one of the first metal electrode 510 and the second metal electrode 520 is connected to the N-GaN layer 210, and a position corresponding to a pin of the other of the first metal electrode 510 and the second metal electrode 520, such that the pin passes through the first connection hole and is connected to the metal protection layer 600.
In order to prevent electrical connection between the P-electrode (P-GaN layer) and the N-electrode (N-GaN layer) in the flip LED chip, the P-electrode and the N-electrode are insulated by the provision of the first passivation layer 610. The specific structure of the first passivation layer 610 can be seen in the following examples:
example one: by means of SiO 2 Or Si 3 N 4 As a material of the first passivation layer 610, and a growth temperature of the first passivation layer 610 may be between 150 ℃ and 300 ℃, a thickness of the first passivation layer 610 may be 200nm to 2000nm. Wherein, the first passivation layer 610 may adopt a single SiO 2 Or Si 3 N 4 Or the two materials are grown colloidally with each other.
Example two: the first passivation layer 610 is formed using a DBR stack, in which the DBR reflective layer may be formed by overlapping a high-reflectivity film, which may be made of, for example, ta, and a low-reflectivity film 2 O 5 Etc., the material of the low-reflectance thin film may be, for example, siO 2 、MgF 2 、MgO、Al 2 O 3 、HfO 2 、BaF 2 、AlF 3 And the like. And the number of the thin film layers in the DBR reflecting layer can be not less than three, the thickness of each thin film layer can be 100nm-6000nm, and the processing temperature of the DBR reflecting layer can be between 100 ℃ and 300 ℃. The DBR lamination not only can play an insulating role, but also can play a similar effect to the nonmetal reflecting layer 410, namely, the DBR lamination can reflect light, so that the light extraction efficiency of the LED chip is improved to a certain extent.
Further, the metal electrode assembly 500 may further include a third metal electrode 530 and a fourth metal electrode 540. The flip LED chip may further include a second passivation layer 620, the second passivation layer 620 is disposed between the planes of the first metal electrode 510 and the second metal electrode 520 and the planes of the third metal electrode 530 and the fourth metal electrode 540, and the second passivation layer 620 is formed with a second connection hole (not labeled in the figure) so that one of the third metal electrode 530 and the fourth metal electrode 540 is connected to the first metal electrode 510 and the other of the third metal electrode 530 and the fourth metal electrode 540 is connected to the second metal electrode 520. Similarly, the second connection hole and the first connection hole are arranged in a similar manner, and the opening position of the second connection hole may be a position corresponding to the pins of the third metal electrode 530 and the fourth metal electrode 540.
The third metal electrode 530 and the fourth metal electrode 540 are arranged to extend the first metal electrode 510 and the second metal electrode 520 to a certain extent, so that the flip LED chip has a larger polarity region, the application range of the flip LED chip is increased, the flip LED chip can be applied to a wider scene, and the connection stability and the connection effect of the flip LED chip can be improved.
Also, the second passivation layer 620 is provided to insulate the P electrode and the N electrode. Also, the structure of the second passivation layer 620 may be the same as that of the first passivation layer 610, and will not be described herein.
In some embodiments, the first and second metal electrodes 510 and 520 each include a first adhesion layer and a first structural layer, and the third and fourth metal electrodes 530 and 540 each include a second adhesion layer, a second structural layer, and a eutectic layer.
The first adhesion layer is disposed to improve the connection effect between the first metal electrode 510 and the first metal electrode 510, and between the metal protection layer 600 and the N-GaN layer 210, and to enhance the adhesion performance between the first metal electrode 510 and the second metal electrode 520. The second adhesion layer is disposed to improve the connection effect between the third metal electrode 530 and the fourth metal electrode 540, and the first metal electrode 510 and the second metal electrode 520, and enhance the adhesion performance of the third metal electrode 530 and the fourth metal electrode 540. The materials of the first and second adhesion layers may be CR, NI, TI, etc., and the thickness thereof may be between 0.5nm and 100nm, and the embodiments of the present application are not limited to the materials and dimensions of the first and second adhesion layers.
In addition, since the third metal electrode 530 and the fourth metal electrode 540 constitute the outermost surface of the flip-chip LED chip, and the third metal electrode 530 and the fourth metal electrode 540 are directly connected to other components, the eutectic layer is disposed to improve the connection effect between the third metal electrode 530 and the fourth metal electrode 540 and other components. The material of the eutectic layer can be Au, sn, anSn alloy and the like, and the thickness of the eutectic layer can be between 1 μm and 100 μm, and the material, the size and the like of the eutectic layer are not limited in the embodiment of the application.
In addition, the first structural layer and the second structural layer may be made of metal such as AL, TI, PT, NI, AU, etc., and the total thickness of the first structural layer and the first adhesion layer may be between 50nm and 5000nm, and the thickness of the second structural layer may be between 1000nm and 5000nm.
In some embodiments, the edge of the substrate 100 may be etched with an isolation trench (not labeled), to which the edge of the first passivation layer 610 and the edge of the second passivation layer 620 extend, respectively. The arrangement of extending the first and second passivation layers 610 and 620 to the isolation trench can greatly improve the insulating property of the flip LED chip.
It is understood that a person skilled in the art can combine, split, recombine and the like the embodiments of the present application to obtain other embodiments on the basis of several embodiments provided by the present application, and the embodiments do not depart from the scope of the present application.
The above embodiments, objects, technical solutions and advantages of the embodiments of the present application are described in further detail, and it should be understood that the above embodiments are only specific embodiments of the present application and are not intended to limit the scope of the embodiments of the present application, and any modifications, equivalent substitutions, improvements and the like made on the basis of the technical solutions of the embodiments of the present application should be included in the scope of the embodiments of the present application.
Claims (10)
1. A flip chip light emitting diode chip, comprising:
a substrate having a first surface;
the epitaxial lamination layer comprises an N-GaN layer, a P-GaN layer, an active layer and a conductive hole, wherein the N-GaN layer and the P-GaN layer are sequentially arranged on the first surface in a stacking mode along the direction far away from the substrate, the active layer is located between the N-GaN layer and the P-GaN layer, and the conductive hole penetrates through the P-GaN layer and the active layer respectively so that the N-GaN layer is partially exposed;
the transparent conducting layer is arranged on one side, back to the active layer, of the P-GaN layer, and ohmic contact is formed between the transparent conducting layer and the P-GaN layer;
the composite reflecting layer comprises a non-metal reflecting layer and a metal reflecting layer, the metal reflecting layer is positioned on one side of the transparent conducting layer, which is back to the P-GaN layer, the non-metal reflecting layer is positioned between the metal reflecting layer and the transparent conducting layer, and the metal reflecting layer is connected with the transparent conducting layer by virtue of a first gap formed by the non-metal reflecting layer;
and the metal electrode assembly comprises a first metal electrode and a second metal electrode which are respectively arranged on one side of the metal reflecting layer back to the transparent conducting layer, one of the first metal electrode and the second metal electrode is connected with the metal reflecting layer, and the other of the first metal electrode and the second metal electrode penetrates through the conducting hole to be contacted with the N-GaN layer.
2. The flip chip led chip of claim 1, wherein the non-metallic reflective layer is a mesh structure, and the first gap is formed by voids in the mesh structure; alternatively, the first and second liquid crystal display panels may be,
the non-metal reflecting layer is an island-shaped structure, and the first gap is formed by gaps in the island-shaped structure.
3. The flip-chip led chip of claim 1, wherein the transparent conductive layer is a planar structure; or
The transparent conducting layer is of a net structure, and second gaps are formed in gaps in the net structure; or alternatively
The transparent conductive layer is an island-shaped structure, and a second gap is formed by a gap in the island-shaped structure.
4. The flip-chip led chip of claim 3, wherein the transparent conductive layer is a mesh structure, and the voids in the mesh structure form second gaps; or the transparent conductive layer is an island-shaped structure, and a second gap is formed by a gap in the island-shaped structure;
the first gap and the second gap are correspondingly arranged, so that the metal reflecting layer respectively penetrates through the first gap and the second gap and is in contact with the P-GaN layer.
5. The flip chip light emitting diode chip of claim 1, wherein edges of the non-metallic reflective layer are capable of extending along a contour of the epitaxial stack to encapsulate the epitaxial stack.
6. The flip light emitting diode chip of claim 1, wherein the flip light emitting diode chip further comprises: and the metal protective layer is arranged on the outer side of the metal reflecting layer so as to cover the top surface and the side surface of the metal reflecting layer.
7. The flip light emitting diode chip of claim 6, wherein the flip light emitting diode chip further comprises:
the first passivation layer is arranged between the first metal electrode and the metal protection layer, between the second metal electrode and the metal protection layer, and is provided with a first connecting hole, so that the first metal electrode and the second metal electrode can be connected with the metal protection layer and the N-GaN layer.
8. The flip chip light emitting diode chip of claim 7, wherein the metal electrode assembly further comprises a third metal electrode and a fourth metal electrode;
the flip light emitting diode chip further includes:
the second passivation layer is arranged between the planes of the first metal electrode and the second metal electrode and the planes of the third metal electrode and the fourth metal electrode, and the second passivation layer is provided with a second connecting hole so that one of the third metal electrode and the fourth metal electrode is connected with the first metal electrode and the other of the third metal electrode and the fourth metal electrode is connected with the second metal electrode.
9. The flip-chip light emitting diode chip of claim 8, wherein the first metal electrode and the second metal electrode each comprise a first adhesion layer and a first structural layer, and the third metal electrode and the fourth metal electrode each comprise a second adhesion layer, a second structural layer, and a eutectic layer.
10. The flip-chip light emitting diode chip of any one of claims 1 to 9, wherein the metal reflective layer is an Ag reflective layer or an AL reflective layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222667023.0U CN218602469U (en) | 2022-10-10 | 2022-10-10 | Flip-chip light emitting diode chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222667023.0U CN218602469U (en) | 2022-10-10 | 2022-10-10 | Flip-chip light emitting diode chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN218602469U true CN218602469U (en) | 2023-03-10 |
Family
ID=85402564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202222667023.0U Active CN218602469U (en) | 2022-10-10 | 2022-10-10 | Flip-chip light emitting diode chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN218602469U (en) |
-
2022
- 2022-10-10 CN CN202222667023.0U patent/CN218602469U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102606543B1 (en) | Light-emitting device | |
| KR101627010B1 (en) | Semiconductor light emitting device including metal reflecting layer | |
| TWI766356B (en) | Light emitting diode chip | |
| JP5582054B2 (en) | Semiconductor light emitting device | |
| CN109244197B (en) | Light emitting diode chip with flip structure and preparation method thereof | |
| CN111433921B (en) | Light-emitting diode | |
| US20230317888A1 (en) | Light emitting device and light emitting apparatus having the same | |
| CN104064640A (en) | Vertical type led structure and manufacturing method thereof | |
| CN103035812A (en) | Base plate | |
| KR20080027584A (en) | Vertical light emitting diode and method of fabricating the same | |
| CN210897328U (en) | Light emitting diode chip and light emitting module | |
| TWI557941B (en) | Optoelectronic device and method for manufacturing the same | |
| CN111106212A (en) | Deep ultraviolet light-emitting diode with vertical structure and preparation method thereof | |
| CN218602469U (en) | Flip-chip light emitting diode chip | |
| CN102916102B (en) | Optoelectronic component | |
| CN107017321B (en) | Light emitting element | |
| JP7354261B2 (en) | light emitting diode | |
| CN113555482A (en) | Light emitting element and method for manufacturing the same | |
| KR20090085772A (en) | Light emitting diode with a plurality of insulator layers and fabrication method of the same | |
| KR102563266B1 (en) | Light emitting device and light module | |
| TWI835538B (en) | Light-emitting device | |
| CN115939298A (en) | Light-emitting diode and light-emitting device | |
| CN117525238A (en) | Light-emitting chip structure, manufacturing method thereof and light-emitting backboard | |
| CN117133845A (en) | Light-emitting element and light-emitting module | |
| CN117810338A (en) | Light emitting element, backlight unit having the same, and display device having the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |