CN100490193C - Light-emitting element and lighting equipment using the same - Google Patents

Light-emitting element and lighting equipment using the same Download PDF

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Publication number
CN100490193C
CN100490193C CNB2005100977046A CN200510097704A CN100490193C CN 100490193 C CN100490193 C CN 100490193C CN B2005100977046 A CNB2005100977046 A CN B2005100977046A CN 200510097704 A CN200510097704 A CN 200510097704A CN 100490193 C CN100490193 C CN 100490193C
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mentioned
light
layer
semiconductor layer
gallium nitride
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CN1741295A (en
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松田敏哉
安田隆则
西薗和博
高浪俊
岸田裕司
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Kyocera Corp
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Kyocera Corp
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Abstract

The present invention is a light-emitting element provided with semiconductor layers of gallium nitride compounds 4 having a multilayer structure including an emitting layer 3 formed by subjecting gallium nitride compounds to epitaxial growth on a surface 2 of a substrate 1 , wherein a back surface 7 of the semiconductor layers 4 exposed by removal of the substrate 1 or an outermost layer 5 of the semiconductor layers 4 is provided as a radiating surface 8 for radiating light emitted from the emitting layer 3 to the outside, and able to provide a higher emission intensity from smaller electrical power because the absence of a substrate greatly improves the radiation efficiency of light.

Description

Light-emitting component and the lighting device that uses light-emitting component
Technical field
The present invention relates to a kind of light-emitting component (light-emitting diode with above specific energy consumption of twice of for example employed in lighting device, fluorescent lamp; And the lighting device that uses above-mentioned light-emitting component LED) and manufacture method.
Background technology
Many known, using the light-emitting component of gallium nitride compound semiconductor is the light-emitting component of the blueness of 350～450nm degree to the light of ultraviolet region as emission wavelength.About using the light-emitting component of gallium nitride compound semiconductor, for example, in following document, put down in writing.
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(3)JP，05—183189，A(1993)
(4)JP，06—196757，A(1994)
(3)JP，06—268257，A(1994)
In light-emitting component, the light that allows above-mentioned light-emitting component inside be produced is launched as far as possible efficiently to the outside, and the emission effciency that also promptly improves light is very important.Particularly in recent years, along with the development of commercialization, in the light-emitting component of lighting device, in order to improve energy resource consumption efficient, and improving emission effciency, is indispensable.
Following illustration 3 kinds in order to improve luminous efficiency, and the light-emitting component that in the structure of emission bright dipping, improves to some extent.At first, the 1st kind is to be formed on the lip-deep, gallium nitride compound semiconductor layer with multi-ply construction, vertical with the lamination direction from substrate surface farthest of substrate, or be formed on above-mentioned outside from substrate lip-deep light transmission conductive layer farthest, the surface of emission as light, and, in substrate and face above-mentioned surface opposite, be provided with the light-emitting component in reflector.About having the light-emitting component of above-mentioned structure, for example, in following document, put down in writing.
(6)JP，08—102549，A(1996)
(7)JP，11—126925，A(1999)
(8)JP，2001—7392，A
(9)JP，2001—7397，A
Figure 27 is the cutaway view of an example of the layer structure of the above-mentioned light-emitting component of explanation.Contrast Figure 27, the light-emitting component of illustrative example has: substrate 101; Include on the surface 102 of aforesaid substrate 101, by allowing the gallium nitride compound semiconductor layer (following abbreviate as sometimes " semiconductor layer ") 104 of multi-ply construction of the luminescent layer 103 that the gallium nitride compound epitaxial growth forms; In substrate surface 105 farthest, form the light transmissive light transmission conductive layer 106 that has conductivity and be used for allowing above-mentioned luminescent layer 103 be launched at above-mentioned semiconductor layer 104 perpendicular to the lamination direction with status of electrically connecting; And the electrode pad 108 that is connected of the part of the outside 107 of the opposite face of the face that joins with the conduct of above-mentioned light transmission conductive layer 106 and semiconductor layer 104, the outside 107 of above-mentioned light transmission conductive layer 106 is as being used for allowing the outwards surface of emission of emission of above-mentioned light.Semiconductor layer 104 is by lamination the 1st conductive-type semiconductor layer 109, above-mentioned luminescent layer 103 and the 2nd conductive-type semiconductor layer 110 constitute in turn on the surface 102 of substrate 101.
By removing the part of luminescent layer 103 and the 2nd conductive-type semiconductor layer 110, allow the part on the surface vertical 111 of the 1st conductive-type semiconductor layer 109 expose with the lamination direction, that is exposed above-mentioned surperficial 111 is connected with electrode pad 112.In the opposite face 113 in surface substrate 101 and that be formed with semiconductor layer 104 102, be formed with and be used for reflecting the reflection of light layer 114 that above-mentioned luminescent layer 103 is launched.
In the above-mentioned light-emitting component, if circulating current between the electrode pad 108,112, then be injected into hole and electronics (or electronics and hole) the semiconductor layer 104 from above-mentioned two electrode pads 108,112, respectively in the 2nd conductive-type semiconductor layer 110 and the 1st conductive-type semiconductor layer 109 along carrying on the thickness direction, in luminescent layer 103, carry out combination again, by like this, encourage the gallium nitride compound that constitutes above-mentioned luminescent layer 103 luminous.
Like this, shown in the single-point dotted arrow among the figure, from the light from substrate farthest surface 105 directions of luminescent layer 103 emission to semiconductor layer 104, by the 2nd conductive-type semiconductor layer 110 and light transmission conductive layer 106,107 outsides of directly launching from the outside to light-emitting component.In addition, from the light of luminescent layer 103 emissions to the direction of substrate 101, by the 1st conductive-type semiconductor layer 109 and substrate 101, the opposing face 113 that is used as the substrate 101 at the interface between aforesaid substrate 101 and the reflector 114 reflects, after above-mentioned opposing face 113 reflects, from substrate the 101, the 1st conductive-type semiconductor layer 109, luminescent layer the 103, the 2nd conductive-type semiconductor layer 110 and light transmission conductive layer 106, pass through, from the outside 107 external emission to light-emitting component.
The 2nd kind is in the surface that is formed with the gallium nitride compound semiconductor layer of substrate, forms the reflector, and above-mentioned semiconductor layer of lamination on it simultaneously, has omitted the light-emitting component in reflector of the opposing face of substrate.About having the light-emitting component of above-mentioned structure, be documented in for example following document.
(10)JP，03—108778，A(1991)
(11)JP，03—163882，A(1991)
(12)JP，09—232631，A(1997)
(13)JP，11—251642，A(1999)
(14)JP，11—274568，A(1999)
(15)JP，2001—168387，A
(16)JP，2004—31405，A
Figure 28 is the cutaway view of an example of the layer structure of the above-mentioned light-emitting component of explanation.Contrast Figure 28, the light-emitting component of illustrative example has: substrate 101; Be formed on the reflector 115 on the surface 102 of aforesaid substrate 101; Include on above-mentioned reflector 115, by allowing the gallium nitride compound semiconductor layer 104 of multi-ply construction of the luminescent layer 103 that the gallium nitride compound epitaxial growth forms; The light transmission conductive layer 106 that in substrate surface 105 farthest, forms at above-mentioned semiconductor layer 104 with status of electrically connecting perpendicular to the lamination direction; The electrode pad 108 that the part of the outside 107 of the face that face above-mentioned light transmission conductive layer 106, that join with semiconductor layer 104 is opposite is connected; The outside 107 of above-mentioned light transmission conductive layer 106 is as being used for allowing the outwards surface of emission of emission of above-mentioned light.
Semiconductor layer 104 is by lamination the 1st conductive-type semiconductor layer 109, above-mentioned luminescent layer 103 and the 2nd conductive-type semiconductor layer 110 constitute in turn on reflector 115.By removing the part of luminescent layer 103 and the 2nd conductive-type semiconductor layer 110, allow the part on the surface vertical 111 of the 1st conductive-type semiconductor layer 109 expose with the lamination direction, that is exposed above-mentioned surperficial 111 is connected with electrode pad 112.
In the above-mentioned light-emitting component, if flow through electric current between the electrode pad 108,112, then be injected into hole and electronics (or electronics and hole) the semiconductor layer 104 from above-mentioned two electrode pads 108,112, respectively in the 2nd conductive-type semiconductor layer 110 and the 1st conductive-type semiconductor layer 109 along carrying on the thickness direction, in luminescent layer 103, carry out combination again, by like this, encourage the gallium nitride compound that constitutes above-mentioned luminescent layer 103 luminous.
Like this, shown in the single-point dotted arrow among the figure, from the light from substrate farthest surface 105 directions of luminescent layer 103 emission to semiconductor layer 104, by the 2nd conductive-type semiconductor layer 110 and light transmission conductive layer 106,107 outsides of directly launching from the outside to light-emitting component.In addition, from the light of luminescent layer 103 emissions to the direction of substrate 101, by the 1st conductive-type semiconductor layer 109, arrive reflector 115, in above-mentioned reflector 115, or the 1st interface between conductive-type semiconductor layer 109 and the reflector 115 reflect, from the 1st conductive-type semiconductor layer 109, luminescent layer the 103, the 2nd conductive-type semiconductor layer 110 and light transmission conductive layer 106, pass through, 107 emissions are to the outsides of light-emitting component from the outside.
In addition, the 3rd kind be substrate surperficial formed, have multi-ply construction have the gallium nitride compound semiconductor layer, vertical with the lamination direction in substrate surface farthest, form the reflector, and, with substrate and the light-emitting component of face above-mentioned surface opposite as the surface of emission of light.About having the light-emitting component of above-mentioned structure, be documented in for example following document.
(17)JP，10—144961，A(1998)
(18)JP，11—220168，A(1999)
(19)JP，11—261109，A(1999)
(20)JP，2000—31540，A
(21)JP，2000—183400，A
(22)JP，2000—294837，A
(23)JP，2002—246649，A
(24)JP，2003—532298，A
(25)JP，3068914，U
Figure 29 is the cutaway view of an example of the layer structure of the above-mentioned light-emitting component of explanation.Contrast Figure 29, the light-emitting component of illustrative example has: substrate 101; Include on the surface 102 of aforesaid substrate 101, by allowing the gallium nitride compound semiconductor layer 104 of multi-ply construction of the luminescent layer 103 that the gallium nitride compound epitaxial growth forms; Above-mentioned semiconductor layer 104 perpendicular in substrate surface 105 farthest, the forming of lamination direction with status of electrically connecting, have conductivity and be used for allowing the conductivity reflector 116 of the light reflection that above-mentioned luminescent layer 103 launched.
Semiconductor layer 104 is by lamination the 1st conductive-type semiconductor layer 109, above-mentioned luminescent layer 103 and the 2nd conductive-type semiconductor layer 110 constitute in turn on the surface 102 of substrate 101.By removing the part of luminescent layer 103 and the 2nd conductive-type semiconductor layer 110, allow the part on the surface vertical 111 of the 1st conductive-type semiconductor layer 109 expose with the lamination direction, that is exposed above-mentioned surperficial 111 is connected with electrode pad 112.The opposing face 113 opposite with semiconductor layer 104 formed surperficial 102 of substrate 101 is as the outside surface of emission of emission of the light that is used for allowing above-mentioned luminescent layer 103 be launched.
In the above-mentioned light-emitting component, if flow through electric current between conductivity reflector 116 and the electrode pad 112, then from above-mentioned both be injected into hole and electronics (or electronics and hole) the semiconductor layer 104, respectively in the 2nd conductive-type semiconductor layer 110 and the 1st conductive-type semiconductor layer 109 along carrying on the thickness direction, in luminescent layer 103, carry out combination again, by like this, encourage the gallium nitride compound that constitutes above-mentioned luminescent layer 103 luminous.
Like this, shown in the single-point dotted arrow among the figure,,, directly launch outside to light-emitting component from opposing face 113 by the 1st conductive-type semiconductor layer 109 and substrate 101 from the light of luminescent layer 103 emission to substrate 101 directions.In addition, from the light from substrate farthest surface 105 directions of luminescent layer 103 emissions to semiconductor layer 105, by the 2nd conductive-type semiconductor layer 110, arrival as the semiconductor layer 104 at the interface between above-mentioned the 2nd conductive-type semiconductor layer 110 and the conductivity reflector 116 from substrate surface 105 farthest, reflected from substrate surface 105 farthest by above-mentioned, from the 2nd conductive-type semiconductor layer 110, luminescent layer the 103, the 1st conductive-type semiconductor layer 109 and substrate 101, pass through, from the outside of opposing face 113 emissions to light-emitting component.
In the light-emitting component of above-mentioned Figure 27, from the light of luminescent layer 103 emissions to substrate 101 directions, when in aforesaid substrate 101, transmitting, be easy to be absorbed by substrate 101, in addition, the part of the light that is reflected by the opposing face 113 of substrate 101 is on the surface 102 as the aforesaid substrate 101 at the interface of substrate 101 and the 1st conductive-type semiconductor layer 109, and interreflection between the above-mentioned opposing face 113, thereby by being closed in decay in the substrate 101 like this.Therefore,, improved the light reflectivity of above-mentioned opposing face 113, compared, also existed from the outside the emission effciency of 107 light of being launched almost to fail to improve this problem with the situation that reflector 114 is not set even reflector 114 is set.
The light-emitting component of Figure 29 too, directly launch from luminescent layer 103, or reflected by conductivity reflector 116, thereby emission, is easy to be absorbed by substrate 101 when transmitting in aforesaid substrate 101 to the light of substrate 101 directions, the part of light, on surface 102 as the aforesaid substrate 101 at the interface of substrate 101 and the 1st conductive-type semiconductor layer 109, and interreflection between the above-mentioned opposing face 113, thereby by being closed in decay in the substrate 101 like this.Therefore, come reverberation, compare, also exist the emission effciency of the light of being launched from opposing face 113 almost to fail to improve this problem with the situation that above-mentioned conductivity reflector 116 is not set even conductivity reflector 116 is set.
The light-emitting component of Figure 28, the light owing to from luminescent layer 103 does not pass through from substrate 101, therefore can not produce the absorption of 101 pairs of light of aforesaid substrate and the problem of decay.But, limited on reflector 115 and can form the material in above-mentioned reflector 115 of the good gallium nitride compound semiconductor layer 104 of crystalline quality or structure etc. by epitaxial diffused method.And, the major part in reflector 115 with these materials or structure is all lower to the reflection of light rate, perhaps the light wavelength that can reflect is limited, even make up with the semiconductor layer 104 of emission blueness to the light of ultraviolet region, also has the problem that can't obtain high reflectance.Therefore, come reverberation, compare, also exist the emission effciency of the light of being launched from opposing face 113 almost to fail to improve this problem with the situation that above-mentioned reflector 115 is not set even be provided with reflector 115.
Summary of the invention
The object of the present invention is to provide a kind of emission effciency that can significantly improve light, thereby can obtain the high performance light-emitting component of high luminous intensity by small-power.Another object of the present invention is, provide a kind of can high production rate, high efficiency makes the manufacture method of the light-emitting component of above-mentioned light-emitting component.Another object of the present invention is, a kind of lighting device above-mentioned light-emitting component, that specific energy consumption is good that uses is provided.
Light-emitting component of the present invention is characterised in that to have: allow the gallium nitride compound epitaxial growth form, comprise the gallium nitride compound semiconductor layer (semiconductor layers of galliumnitride compounds) of the multi-ply construction (multilayerstructure) of luminescent layer (emitting layer) on substrate; Above-mentioned semiconductor layer perpendicular to the lamination direction in substrate surface farthest, form with status of electrically connecting, have conductivity and be used for allowing the conductivity reflector of the light reflection that above-mentioned luminescent layer launched; And, with conductive layer above-mentioned semiconductor layer, that formation is electrically connected with the layer of the contacted inboard of substrate; Simultaneously, allow above-mentioned inboard expose, as the surface of emission of the light that is used for allowing above-mentioned luminescent layer launch to the external emission of semiconductor layer by removing substrate.
In the light-emitting component of the invention described above, with the removal of gallium nitride compound semiconductor layer the inboard of substrate, the surface of emission of the light of launching as luminescent layer, because above-mentioned light can not pass through substrate, and outwards launch from the above-mentioned surface of emission, therefore can eliminate the problem of substrate to the absorption and the decay of light.
In addition, irrelevant because substrate is as previously mentioned with optical transmission, therefore do not need to consider light transmission etc.So, substrate can select to allow gallium nitride compound semiconductor layer and lattice constant mate, pass through epitaxial growth, form the substrate of the gallium nitride compound semiconductor layer that crystalline quality is better and luminous efficiency is good in its surface, thereby can improve the luminous efficiency of formed semiconductor layer.
In addition, form the conductivity reflector in the back on substrate surface farthest of the above-mentioned conductor layer that forms by epitaxial growth, its material and structure are also unqualified.Therefore, the conductivity reflector can use to have conductivity, simultaneously, particularly to wavelength be about 350～400 blueness to the good conductivity reflector of the reflection of light rate of ultraviolet region, thereby can improve reflection of light rate in the above-mentioned conductivity reflector.
Therefore,,, can improve significantly that luminescent layer is launched and the emission effciency of the light that outwards penetrates from the surface of emission, thereby can pass through quite little power, obtain quite high luminous intensity by the combination of above-mentioned each effect by light-emitting component of the present invention.
In light-emitting component of the present invention, in inboard as the semiconductor layer surface of emission, that expose by the removal substrate, be formed with under the situation that prevents the reflector, just can reduce the reflection of light rate in the above-mentioned surface of emission, improve transmissivity, thereby prevent above-mentioned light interreflection in semiconductor layer.Therefore, can further improve from luminescent layer send, from surface of emission emission emission effciency to the light of outside.
If the light transmission of the further raising surface of emission is considered in the above-mentioned reflector that prevents, then preferably allow its refractive index from contacted of semiconductor layer, reduce towards outside dullness as above-mentioned opposing face.Its thickness preferably is formed light that luminescent layer launches at above-mentioned 1/4 times of preventing the wavelength in the reflector.
In light-emitting component of the present invention, as the inboard surface of emission, above-mentioned semiconductor layer, or the formed outside that prevents the reflector in the above-mentioned inboard, be formed with a plurality of projections, simultaneously, the size of above-mentioned projection on the direction vertical with short transverse, under the situation about reducing from the base portion of projection towards the top dullness, by the function of above-mentioned a plurality of projections, can reduce the reflection of light rate in above-mentioned any face, improve transmissivity.
Also promptly, if in above-mentioned any face, form a plurality of projections, just then above-mentioned face can be tilted by the relative plane vertical with the lamination direction of semiconductor layer, the aggregate on the surface of a plurality of projections forms.Therefore, launch and incide in the light above-mentioned from luminescent layer, because of incidence angle has surpassed by the interface between semiconductor layer and the air, semiconductor layer and has prevented interface between the reflector, or prevent the determined critical angle in interface between reflector and the air, thereby by total reflection components in proportions, with above-mentioned face is that the situation on plane is compared and can be reduced, thereby can reduce the reflection of light rate in above-mentioned, improves transmissivity.Therefore, can reduce the reflection of light rate in the surface of emission of light-emitting component, improve transmissivity, thereby can further improve that luminescent layer is launched and from the outside emission effciency of the light of emission of the surface of emission.
Above-mentioned projection, if consider the light transmission of the further raising surface of emission, then preferably allow the size of its base portion on the direction vertical with short transverse, wavelength 1 times below of the light of launching for luminescent layer in being formed with the layer of above-mentioned projection, and the height of projection is more than 1 times of above-mentioned wavelength.
In addition, in light-emitting component of the present invention, the inboard of above-mentioned semiconductor layer, or the formed outside that prevents the reflector in the above-mentioned inboard are formed with a plurality of recesses, simultaneously, the size of above-mentioned recess on the direction vertical with depth direction is under the situation about reducing from the peristome of recess towards the bottom dullness, by the function of above-mentioned a plurality of recesses, can reduce the reflection of light rate in above-mentioned any face, improve transmissivity.
Also promptly, if in above-mentioned any face, form a plurality of recesses, just then above-mentioned face can be by forming as vertical with the lamination direction of semiconductor layer relatively plane, the aggregate on surface of a plurality of recesses by above-mentioned given three-dimensional shape inclination.Therefore, launch and incide in the light above-mentioned from luminescent layer, because of incidence angle has surpassed by the interface between semiconductor layer and the air, semiconductor layer and has prevented interface between the reflector, or prevent the critical angle that the interface between reflector and the air sets, thereby by total reflection components in proportions, with above-mentioned face is that the situation on plane is compared and can be reduced, thereby can reduce the reflection of light rate in above-mentioned, improves transmissivity.Therefore, can reduce the reflection of light rate in the surface of emission of light-emitting component, improve transmissivity, thereby can further improve that luminescent layer is launched and from the outside emission effciency of the light of emission of the surface of emission.
Above-mentioned recess, if consider the light transmission of the further raising surface of emission, then preferably allow the size of its peristome on the direction vertical with depth direction, wavelength 1 times below of the light of launching for luminescent layer in being formed with the layer of above-mentioned recess, and concave depth is more than 1 times of above-mentioned wavelength.
Above-mentioned conductivity reflector preferably by having conductivity, forms blueness to the reflection of light rate of ultraviolet region good especially aluminium or silver simultaneously.
Preferably allow the outside conductivity reflector and opposing face contacted of semiconductor layer, be connected with projected electrode.In the past, have in the light-emitting component of substrate and gallium nitride compound semiconductor layer, if with above-mentioned light-emitting component through the projected electrode upside-down mounting the encapsulation etc. in, because the heating of this moment, poor according to above-mentioned thermal coefficient of expansion between the two, exist to give the semiconductor layer stress application, produce and substrate between peel off, semiconductor layer deforms, and causes the problems such as reliability decrease of light-emitting component.Relative therewith, light-emitting component of the present invention, owing to remove substrate, the heat during the flipped light emitting element, and give the stress that semiconductor layer applied and was compared in the past and can be reduced, and therefore, can reduce the distortion of above-mentioned semiconductor layer etc., improved the reliability of light-emitting component.
Be used to make the manufacture method of light-emitting component of the present invention of the light-emitting component of the invention described above; be characterised in that; have: on substrate, carry out epitaxial growth; form semiconductor layer operation, above-mentioned semiconductor layer form the operation in conductivity reflector from substrate surface farthest and under the state that above-mentioned semiconductor layer and conductivity reflector is covered by protective layer; remove aforesaid substrate, the operation that allows the inboard of semiconductor layer expose.
In the manufacture method of the invention described above, in removing the operation of substrate, with the conductivity reflector with and following semiconductor layer, cover by protective layer, therefore, can prevent that these layers for example are used to remove the etching liquid of substrate etc. and pollute, corrode.In addition, can also carry out the machinery reinforcement to conductivity reflector and semiconductor layer, therefore, can prevent the distortion of these layers stress by protective layer.Therefore,, can prevent because of producing the decline of the various bad rate of finished productss that cause such as above-mentioned pollution, burn into distortion by manufacture method of the present invention, thus can high production rate, make light-emitting component efficiently.
In addition, in the manufacture method of the invention described above,, implement to prevent to reflect the operation of processing if in the inboard of removing the semiconductor layer that substrate exposed, then as previously mentioned, can further improve from luminescent layer send through the emission effciency of surface of emission emission to the light of outside.
In addition; if after having formed the conductivity reflector; the outside in the above-mentioned conductivity reflector before removing substrate; connect projected electrode; simultaneously; under the state that above-mentioned semiconductor layer and conductivity reflector and projected electrode is covered by protective layer; remove aforesaid substrate; can prevent that then above-mentioned projected electrode is used to remove the various bad and declines of the rate of finished products that causes such as the pollutions such as etching liquid of substrate, corrosion, thus can high production rate, make light-emitting component efficiently.
In addition, if the outside in the conductivity reflector after the removal substrate exposes by the inboard of semiconductor layer, connect projected electrode, can prevent that then above-mentioned projected electrode is used to remove the various bad and declines of the rate of finished products that causes such as the pollutions such as etching liquid of substrate, corrosion, thus can high production rate, make light-emitting component efficiently.
Substrate preferably can allow gallium nitride compound semiconductor layer and lattice constant mate, pass through epitaxial growth, form in its surface crystalline quality is better and luminous efficiency is good gallium nitride compound semiconductor layer, by the formed substrate of boride monocrystal, above-mentioned boride monocrystal is preferably the monocrystal of zirconium boride or titanium boride.
Lighting device of the present invention because with the light-emitting component of the invention described above, combines with at least one side in fluorophor or the phosphor and constitute, so specific energy consumption is good.
Light-emitting component of the present invention is characterised in that to have: allow the gallium nitride compound epitaxial growth form, comprise the gallium nitride compound semiconductor layer of the multi-ply construction of luminescent layer on substrate; Above-mentioned semiconductor layer perpendicular to the lamination direction in substrate surface farthest, with status of electrically connecting light transmissive light transmission conductive layer that form, that have conductivity and be used for allowing above-mentioned luminescent layer be launched; And, with conductive layer above-mentioned semiconductor layer, that formation is electrically connected with the layer of the contacted inboard of substrate, simultaneously, allow above-mentioned inboard expose by removing substrate, in the above-mentioned inboard of being exposed, form and be used for reflecting the reflection of light layer that above-mentioned luminescent layer is launched; With outside above-mentioned light transmission conductive layer and opposing face contacted of semiconductor layer, as the surface of emission of the light that is used for allowing above-mentioned luminescent layer launch to the external emission of semiconductor layer.
In the light-emitting component of the invention described above, in the removal of gallium nitride compound semiconductor layer in the inboard of substrate, be formed with and be used for reflecting the reflection of light layer that luminescent layer is launched, because above-mentioned light can not pass through substrate, and outwards launch from the surface of emission of the outside of formed light transmission conductive layer from substrate surface farthest at above-mentioned semiconductor layer, therefore can eliminate the problem of substrate to the absorption and the decay of light.
In addition, as mentioned above,, therefore do not need to consider light transmission etc. because substrate and optical transmission are irrelevant.So, substrate can be selected to use and can allow gallium nitride compound semiconductor layer and lattice constant mate, pass through epitaxial growth, form the substrate of the better and above-mentioned semiconductor layer that luminous efficiency is good of crystalline quality in its surface, thereby can improve the luminous efficiency of formed semiconductor layer.
In addition, the reflector remove substrate after forming by epitaxial growth, thereby the back forms on the inboard of the above-mentioned conductor layer that is exposed, and its material and structure are also unqualified.Therefore, the reflector can be selected to use particularly blueness to the good reflector of the reflection of light rate of ultraviolet region, thereby can improve the reflection of light rate in the above-mentioned reflector.
Therefore,,, can improve significantly that luminescent layer is launched and the emission effciency of the light that outwards penetrates from the surface of emission, thereby can pass through quite little power, obtain high luminous intensity by the combination of above-mentioned each effect according to light-emitting component of the present invention.
Above-mentioned reflector is preferably by forming blueness to the good especially titanium of the reflection of light rate of ultraviolet region, aluminium or silver.
In addition, the outside in above-mentioned reflector has preferably engaged supporter.If the outside in above-mentioned reflector engages with supporter,, therefore can improve the intensity of light-emitting component, and make its easy processing just can strengthen semiconductor layer by above-mentioned supporter.For example, can be with above-mentioned supporter as the pedestal of light-emitting component, above-mentioned light-emitting component is installed in the encapsulation etc. reliably.And, after removing substrate and having formed the reflector, the upper support of rejoining body, its material and structure etc. are also without limits.Therefore, supporter can be selected to use with above-mentioned semiconductor layer thermal coefficient of expansion approaching, or the material of desired characteristic good such as thermal conduction characteristic, conductive characteristic, mechanical property, thereby can improve the reliability of light-emitting component.Above-mentioned supporter preferably forms by the silicon of above-mentioned each characteristic good.
Semiconductor layer from substrate surface farthest, or prevent the outside in reflector, be formed with a plurality of projections, simultaneously, the size of above-mentioned projection on the direction vertical with short transverse is under the situation about reducing from the base portion of projection towards the top dullness, by the function of foregoing a plurality of projections, can reduce the reflection of light rate in above-mentioned any face, improve transmissivity.Therefore, can reduce the reflection of light rate in the surface of emission of light-emitting component, improve transmissivity, thereby can further improve that luminescent layer is launched and from the outside emission effciency of the light of emission of the surface of emission.
Above-mentioned projection, if consider the light emission effciency of the further raising surface of emission, then preferably allow the size of its base portion on the direction vertical with short transverse, wavelength 1 times below of the light of launching for luminescent layer in being formed with the layer of above-mentioned projection, and the height of projection is more than 1 times of above-mentioned wavelength.
Above-mentioned semiconductor layer from substrate surface farthest, or prevent the outside in reflector, be formed with a plurality of recesses, simultaneously, the size of above-mentioned recess on the direction vertical with depth direction is under the situation about reducing from the peristome of recess towards the bottom dullness, by the function of foregoing a plurality of recesses, can reduce the reflection of light rate in above-mentioned any face, improve transmissivity.Therefore, can reduce the reflection of light rate in the surface of emission of light-emitting component, improve transmissivity, thereby can further improve that luminescent layer is launched and from the outside emission effciency of the light of emission of the surface of emission.
Above-mentioned recess, if consider the light emission effciency of the further raising surface of emission, then preferably allow the size of its peristome on the direction vertical with depth direction, wavelength 1 times below of the light of launching for luminescent layer in being formed with the layer of above-mentioned recess, and concave depth is more than 1 times of above-mentioned wavelength.
Form flat shape with perforation at the light transmission conductive layer, the semiconductor layer that will in the part of above-mentioned perforation, be exposed from substrate surface farthest, as the light emission that is used for allowing luminescent layer launch under the situation of the surface of emission of the outside of semiconductor layer, can suppress of the decline of above-mentioned light transmission conductive layer, further improve from luminescent layer and send and launch emission effciency to the light of outside from the surface of emission to the optical transmission rate.
The manufacture method of light-emitting component of the present invention that is used to make the light-emitting component of the invention described above is characterised in that to have: carry out epitaxial growth on substrate, form the operation of semiconductor layer; The operation that forms the light transmission conductive layer from substrate surface farthest at above-mentioned semiconductor layer; And under the state that above-mentioned semiconductor layer and light transmission conductive layer is covered by protective layer, remove aforesaid substrate, the operation that allows the inboard of semiconductor layer expose.
In the manufacture method of the invention described above, in removing the operation of substrate, with the light transmission conductive layer with and following semiconductor layer, cover by protective layer, therefore, can prevent that these layers for example are used to remove the etching liquid of substrate etc. and pollute, corrode.In addition, can also carry out the machinery reinforcement to light transmission conductive layer and semiconductor layer, therefore, can prevent the distortion of these layers stress by protective layer.Therefore,, can prevent because of producing the decline of the various bad rate of finished productss that cause such as above-mentioned pollution, burn into distortion by manufacture method of the present invention, thus can high production rate, make light-emitting component efficiently.
Substrate preferably can allow gallium nitride compound semiconductor layer and lattice constant mate, pass through epitaxial growth, form in its surface crystalline quality is better and luminous efficiency is good gallium nitride compound semiconductor layer, by the formed substrate of boride monocrystal, above-mentioned boride monocrystal is preferably the monocrystal of zirconium boride or titanium boride.
Lighting device of the present invention because with the light-emitting component of the invention described above, combines with at least one side in fluorophor or the phosphor and constitute, so specific energy consumption is good.
Light-emitting component of the present invention is characterised in that to have: allow the gallium nitride compound epitaxial growth form, comprise the gallium nitride compound semiconductor layer of the multi-ply construction of luminescent layer on substrate; Above-mentioned semiconductor layer perpendicular to the lamination direction in substrate surface farthest, the 1st conductive layer that forms with status of electrically connecting; And, allow the inboard of above-mentioned semiconductor layer expose by removing substrate, in the above-mentioned inboard of being exposed, formed the 2nd conductive layer under the state that is electrically connected, and, either party in the above-mentioned the 1st and the 2nd conductive layer, be to have conductivity, and be used for reflecting the conductivity reflector of the light that above-mentioned luminescent layer launches, the opposing party has conductivity, and is used for the light transmission conductive layer of the light that the above-mentioned luminescent layer of transmission launched, simultaneously, with above-mentioned light transmission conductive layer as with the outside of the opposing face of contacted of semiconductor layer, as the surface of emission of the light that is used for allowing above-mentioned luminescent layer launch to the external emission of semiconductor layer.
In the light-emitting component of the invention described above, in the removal of gallium nitride compound semiconductor layer in the inboard of substrate, be formed with the 2nd conductive layer, because above-mentioned light can not pass through substrate, and from above-mentioned the 2nd conductive layer, with semiconductor layer in substrate surface farthest in formed the 1st conductive layer, outwards launch from the surface of emission of the outside of light transmission conductive layer, therefore can eliminate the problem of substrate to the absorption and the decay of light.
In addition, substrate owing to have nothing to do with optical transmission, does not therefore need to consider light transmission etc. as previously mentioned.So, substrate can be selected to use and can allow gallium nitride compound semiconductor layer and lattice constant mate, pass through epitaxial growth, form the substrate of the better and above-mentioned semiconductor layer that luminous efficiency is good of crystalline quality in its surface, thereby can improve the luminous efficiency of formed semiconductor layer.
In addition, the 2nd conductive layer is to remove substrate after forming by epitaxial growth, thereby the back forms on the inboard of the above-mentioned conductor layer that is exposed, its material and structure are also unqualified.Therefore, be under the situation in conductivity reflector at the 2nd conductive layer, can select to use to have conductivity, particularly to blueness to the good conductivity reflector of the reflection of light rate of ultraviolet region, thereby can improve reflection of light rate in the above-mentioned conductivity reflector.In addition, be under the situation of light transmission conductive layer at the 2nd conductive layer, can select to use to have conductivity, particularly to blueness to the good light transmission conductive layer of the optical transmission rate of ultraviolet region, thereby can improve optical transmission rate in the above-mentioned light transmission conductive layer.
Therefore,,, can improve significantly that luminescent layer is launched and the emission effciency of the light that outwards penetrates from the surface of emission, thereby can pass through quite little power, obtain high luminous intensity by the combination of above-mentioned each effect according to light-emitting component of the present invention.
Above-mentioned conductivity reflector is when having conductivity, preferably by blueness to the reflection of light rate of ultraviolet region good especially aluminium or silver is formed.
In addition, the outside in above-mentioned conductivity reflector has preferably engaged supporter.If the outside in conductivity reflector engages with supporter,, therefore can improve the intensity of light-emitting component, and make its easy installation just can strengthen the gallium nitride compound semiconductor layer by above-mentioned supporter.And, after removing substrate and having formed the reflector, the upper support of rejoining body, its material and structure etc. are also without limits.Therefore, supporter can be selected to use with above-mentioned semiconductor layer thermal coefficient of expansion approaching, or the material of desired characteristic good such as thermal conduction characteristic, conductive characteristic, mechanical property, thereby can improve the reliability of light-emitting component.Above-mentioned supporter preferably forms by the silicon of above-mentioned each characteristic good.
In the light-emitting component of the invention described above, between the face that is formed with the light transmission conductive layer and above-mentioned light transmission conductive layer of semiconductor layer, or the outside of light transmission conductive layer, be formed with under the situation that prevents the reflector, just can reduce the reflection of light rate in any face, improve transmissivity, thereby prevent above-mentioned light interreflection in semiconductor layer.Therefore, can further improve from luminescent layer send, from surface of emission emission emission effciency to the light of outside.
If consider the light transmission of the further raising surface of emission, then in the above-mentioned reflector that prevents, under situation about forming between the face that is formed with the light transmission conductive layer of semiconductor layer and the above-mentioned light transmission conductive layer, preferably allow the above-mentioned refractive index that prevents the reflector from contacted of semiconductor layer, towards reducing with contacted dullness of light transmission conductive layer.In addition,, be formed under the situation of outside of light transmission conductive layer, preferably allow the above-mentioned refractive index that prevents the reflector in the above-mentioned reflector that prevents, from contacted of light transmission conductive layer, reduce towards outside dullness as above-mentioned opposing face.In addition, preferably allow the thickness that prevents the reflector form light that luminescent layer launches at above-mentioned 1/4 times of preventing the wavelength in the reflector.
The face that is formed with the light transmission conductive layer at semiconductor layer, or prevent in the outside in reflector, be formed with a plurality of projections, simultaneously, the size of above-mentioned projection on the direction vertical with short transverse is under the situation about reducing from the base portion of projection towards the top dullness, by the function of foregoing a plurality of projections, can reduce the reflection of light rate in above-mentioned any face, improve transmissivity.Therefore, can reduce the reflection of light rate in the surface of emission of light-emitting component, improve transmissivity, thereby can further improve that luminescent layer is launched and from the outside emission effciency of the light of emission of the surface of emission.
Above-mentioned projection, if consider the light emission effciency of the further raising surface of emission, then preferably allow the size of its base portion on the direction vertical with short transverse, wavelength 1 times below of the light of launching for luminescent layer in being formed with the layer of above-mentioned projection, and the height of projection is more than 1 times of above-mentioned wavelength.
The face that is formed with the light transmission conductive layer at semiconductor layer, or prevent in the outside in reflector, be formed with a plurality of recesses, simultaneously, the size of above-mentioned recess on the direction vertical with depth direction is under the situation about reducing from the peristome of recess towards the bottom dullness, by the function of foregoing a plurality of recesses, can reduce the reflection of light rate in above-mentioned any face, improve transmissivity.Therefore, can reduce the reflection of light rate in the surface of emission of light-emitting component, improve transmissivity, thereby can further improve that luminescent layer is launched and from the outside emission effciency of the light of emission of the surface of emission.
Above-mentioned recess, if consider the light emission effciency of the further raising surface of emission, then preferably allow the size of its peristome on the direction vertical with depth direction, wavelength 1 times below of the light of launching for luminescent layer in being formed with the layer of above-mentioned recess, and concave depth is more than 1 times of above-mentioned wavelength.
Form flat shape with perforation at the light transmission conductive layer, the semiconductor layer that will in the part of above-mentioned perforation, be exposed from substrate surface farthest, as the light emission that is used for allowing luminescent layer launch under the situation of the surface of emission of the outside of semiconductor layer, can suppress of the decline of above-mentioned light transmission conductive layer, further improve from luminescent layer and send and launch emission effciency to the light of outside from the surface of emission to the optical transmission rate.
The manufacture method of light-emitting component of the present invention that is used to make the light-emitting component of the invention described above is characterised in that to have: carry out epitaxial growth on substrate, form the operation of semiconductor layer; The operation that forms the 1st conductive layer from substrate surface farthest at above-mentioned semiconductor layer; And under the state that above-mentioned semiconductor layer and the 1st conductive layer is covered by protective layer, remove aforesaid substrate, the operation that allows the inboard of semiconductor layer expose.
In the manufacture method of the invention described above, in removing the operation of substrate, with the 1st conductive layer with and following semiconductor layer, cover by protective layer, therefore, can prevent that these layers for example are used to remove the etching liquid of substrate etc. and pollute, corrode.In addition, can also carry out the machinery reinforcement to the 1st conductive layer and semiconductor layer, therefore, can prevent these ply stresss distortion by protective layer.Therefore,, can prevent because of producing the decline of the various bad rate of finished productss that cause such as above-mentioned pollution, burn into distortion by manufacture method of the present invention, thus can high production rate, make light-emitting component efficiently.
Substrate preferably can allow gallium nitride compound semiconductor layer and lattice constant mate, pass through epitaxial growth, form in its surface crystalline quality is better and luminous efficiency is good gallium nitride compound semiconductor layer, by the formed substrate of boride monocrystal, above-mentioned boride monocrystal is preferably the monocrystal of zirconium boride or titanium boride.
Lighting device of the present invention because with the light-emitting component of the invention described above, combines with at least one side in fluorophor or the phosphor and constitute, so specific energy consumption is good.
Description of drawings
Fig. 1 is the cutaway view of an example of the layer structure of explanation light-emitting component of the present invention.
Fig. 2 is the inboard of explanation at the semiconductor layer of the surface of emission of the light-emitting component of the example of Fig. 1, is formed with the amplification view of the state that prevents the reflector.
Fig. 3 is the inboard of explanation at the semiconductor layer of the surface of emission of the light-emitting component of the example of Fig. 1, is formed with the amplification view of the state of a plurality of projections or recess.
Fig. 4 is the amplification view that further amplifies above-mentioned projection.
Fig. 5 is the amplification view that further amplifies above-mentioned recess.
Fig. 6 is the inboard of explanation at the semiconductor layer of the surface of emission of the light-emitting component of Fig. 1, is formed with to prevent the reflector, simultaneously, is formed with the amplification view of the state of a plurality of projections or recess in the above-mentioned outside in reflector that prevents.
Fig. 7 for explanation in inboard as the semiconductor layer of the surface of emission of the light-emitting component of Fig. 1, be formed with a plurality of projections or recess, form the amplification view of the state that prevents the reflector simultaneously.
Fig. 8～Figure 13 is respectively the cutaway view of explanation by the operation of the light-emitting component of manufacture method shop drawings 1 of the present invention.
Figure 14 is another routine cutaway view of the layer structure of explanation light-emitting component of the present invention.
Figure 15～Figure 20 is respectively the cutaway view of explanation by the operation of the light-emitting component of manufacture method manufacturing Figure 14 of the present invention.
Figure 21 is another routine cutaway view of the layer structure of explanation light-emitting component of the present invention.
Figure 22～Figure 26 is respectively the cutaway view of explanation by the operation of the light-emitting component of manufacture method manufacturing Figure 21 of the present invention.
Figure 27～Figure 29 is respectively another routine cutaway view of the layer structure of the light-emitting component before the explanation.
Embodiment
Fig. 1 is the cutaway view of an example of the layer structure of explanation light-emitting component of the present invention.With reference to Fig. 1, the light-emitting component of illustrative example, have on the surface 2 of represented by a dotted line in the drawings substrate 1: by allowing the gallium nitride compound epitaxial growth form, the gallium nitride compound semiconductor layer (following abbreviate as sometimes " semiconductor layer ") 4 that comprises the multi-ply construction of luminescent layer 3, in substrate surface 5 farthest, forming at above-mentioned semiconductor layer 4 perpendicular to the lamination direction with status of electrically connecting, the conductivity reflector 6 that the light that has conductivity and be used for allowing above-mentioned luminescent layer 3 be launched reflects, by removing substrate 1, allow the exposing of above-mentioned semiconductor layer 4, as the surface of emission 8 of the light that is used for allowing above-mentioned luminescent layer 3 be launched to the external emission of semiconductor layer 4 with substrate 1 contacted inboard 7.Semiconductor layer 4 is by lamination the 1st conductive-type semiconductor layer 9, above-mentioned luminescent layer 3 and the 2nd conductive-type semiconductor layer 10 constitute in turn on the surface 2 of substrate 1.
By removing the part of luminescent layer 3 and the 2nd conductive-type semiconductor layer 10, allow the part on the surface vertical 11 of the 1st conductive-type semiconductor layer 9 expose with the lamination direction, that is exposed above-mentioned surperficial 11 is connected with conductive layer 12.As conductivity reflector 6 and outsides 13 4 contacted opposite faces of semiconductor layer, and in the conductive layer 12, be connected with respectively and be used for the projected electrode 14,15 of the light-emitting component upside-down mounting that this is routine in encapsulation etc.
In the above-mentioned light-emitting component, with the removal of gallium nitride compound semiconductor layer 4 inboard 7 of substrate 1, as the surface of emission 8 of light, because above-mentioned light can not pass through substrate 1, and outwards launch from the above-mentioned surface of emission 8, therefore can eliminate the problem of substrate to the absorption and the decay of light.
In addition, because substrate 1 is irrelevant with optical transmission, therefore do not need to consider light transmission etc.So, substrate 1 can select to allow gallium nitride compound semiconductor layer 4 and lattice constant mate, pass through epitaxial growth, form the substrate 1 of the better and above-mentioned semiconductor layer 4 that luminous efficiency is good of crystalline quality in its surface, thereby can improve the luminous efficiency of formed semiconductor layer 4.
In addition, form conductivity reflector 6 in the back on substrate surface 5 farthest of the above-mentioned conductor layer 4 that forms by epitaxial growth,, its material and structure are also unqualified.Therefore, conductivity reflector 6 can use to have conductivity, simultaneously, particularly to wavelength be blueness about 350～400nm to the good conductivity reflector 6 of the reflection of light rate of ultraviolet region, thereby can improve reflection of light rate in the above-mentioned conductivity reflector 6.
And in the above-mentioned light-emitting component, conductive layer 12 is formed in the part of being exposed with the surface vertical with the lamination direction 11 surface of emission 8 opposing faces, the 1st conductive-type semiconductor layer 9.Therefore, the surface of emission 8 can be by conductive layer 12 or as the coverings such as projected electrode 15 of the wiring of leading to above-mentioned conductive layer 12, therefore can allow according to the light-emitting area of the light-emitting component of the above-mentioned surface of emission 8 big as far as possible.
Therefore,,, can improve significantly that luminescent layer 3 is launched and the emission effciency of the light that outwards penetrate from the surface of emission 8, thereby can pass through quite little power, obtain quite high luminous intensity by the combination of above-mentioned each effect by above-mentioned light-emitting component.
In addition, the direction that above-mentioned projected electrode 15 is set to the projected electrode 14 that is connected with the outside 13 in conductivity reflector 6 is identical, therefore also has to be easy to the light-emitting component upside-down mounting is installed in this advantage in the encapsulation etc.
In the above-mentioned various piece, substrate 1 can use formed substrates 1 such as sapphire or carborundum.But, as previously mentioned, preferably select to allow gallium nitride compound semiconductor layer 4 and lattice constant mate among the present invention, by epitaxial growth, form the substrate 1 of the better and above-mentioned semiconductor layer 4 that luminous efficiency is good of crystalline quality in its surface.Such substrate 1 can list zirconium boride (ZrB 2), titanium boride (TiB 2) etc., by the formed substrate of the monocrystal of boride.
In the gallium nitride compound semiconductor layer 4, luminescent layer 3 can list the various luminescent layers 3 that are made of gallium nitride compound.The ideal example of luminescent layer 3 can list by InGaN (In 0.01Ga 0.99N) etc. the barrier layer of made thick about 10～100nm, with InGaN (In 0.11Ga 0.89N) etc. the mutual lamination of trap layer of made thick about 10～100nm, and allow the orlop and the superiors be multi layer quantum well layers (MQW) of the super grid elements of the resulting conduct of barrier layer.
At the 1st conductive-type semiconductor layer 9 is under the situation of n type semiconductor layer, above-mentioned the 1st conductive-type semiconductor layer 9, for example can list from substrate 1 side in turn lamination the 1n type cover layer of made thick 1～5 μ m such as gallium nitride (GaN) is arranged, with InGaN (In 0.02Ga 0.98The n type semiconductor layer of the double-layer structural that the 2n type cover layer of N) etc. made thick 0.1～1 μ m forms.
At the 2nd conductive-type semiconductor layer 10 is under the situation of p type semiconductor layer, above-mentioned the 2nd conductive-type semiconductor layer 10, for example can list from luminescent layer 3 sides in turn lamination aluminium gallium nitride alloy (Al is arranged 0.2Ga 0. 8N) etc. 1p type cover layer, the aluminium gallium nitride alloy (Al of made thick 50～300nm 0.2Ga 0.8The p type semiconductor layer of the 2p type cover layer of N) etc. made thick 50～300nm, 3 layers of structure forming with the p type contact layer of made thick 0.1～1 μ m such as gallium nitride (GaN).
But, also can be that the 1st conductive-type semiconductor layer 9 is p type semiconductor layer, and the 2nd conductive-type semiconductor layer 10 be n type semiconductor layer.
Constitute above-mentioned each layer of semiconductor layer 4, for example be preferably on the surface 2 by the made substrate 1 of boride monocrystal, forming by aluminium nitride (AlN) or aluminium gallium nitride alloy (Al xGa 1-xN, x satisfies 0≤x＜1, is under the situation of zirconium boride at substrate 1, x=0.24) etc. after the resilient coating made, thick 20～300nm, epitaxial growth and forming in turn.
Conductivity reflector 6 can list the light that can lossless reflection luminescent layer 3 be sent, and has conductivity simultaneously, and can realize layer that be connected with the good ohmic of the 2nd conductive-type semiconductor layer 10, formed by various materials, surface smoothing.In addition, the surface in conductivity reflector 6 is not necessarily very level and smooth, but under rough situation, reduces reflectivity sometimes, therefore should be noted that.
At the 2nd conductive-type semiconductor layer 10 as previously mentioned, under the situation for the p type semiconductor layer, be suitable for the conductivity reflector 6 that combines with above-mentioned the 2nd conductive-type semiconductor layer 10, can list by aluminium (Al), titanium (Ti), nickel (Ni), chromium (Cr), indium (In), tin (Sn), molybdenum (Mo), silver (Ag), gold (Au), niobium (Nb), tantalum (Ta), vanadium (V), platinum (Pt), plumbous (Pb), beryllium (Be), tin ash (SnO 2), indium oxide (In 2O 3, In 2O), indium tin oxide (ITO), au-si alloy (Au-Si), gold-germanium alloy (Au-Ge), golden kirsite (Au-Zn) and golden beryllium alloy (made film such as Au-Be).
Conductivity reflector 6 can be a monolayer constructions will, also can be for example by forming the different two-layer above long-pending layer by layer lamination structure that forms of material.
Conductivity reflector 6, preferably by blueness that the luminescent layer 3 of above-mentioned semiconductor layer 4 is launched to the reflection of light rate of ultraviolet region good, aluminium or silver-colored formed film, particularly be connected this point can carrying out good Ohmic, preferably by the formed film of aluminium with the p type semiconductor layer.
Conductive layer 12 can list and has conductivity, and can realize being connected with the good ohmic of the 1st conductive-type semiconductor layer 9, by the formed layer of various materials.
At the 1st conductive-type semiconductor layer 9 as previously mentioned, under the situation for the n type semiconductor layer, be suitable for the conductive layer 12 that combines with above-mentioned the 1st conductive-type semiconductor layer 9, can list by aluminium (Al), titanium (Ti), nickel (Ni), chromium (Cr), indium (In), tin (Sn), molybdenum (Mo), silver (Ag), gold (Au), niobium (Nb), tantalum (Ta), vanadium (V), platinum (Pt), plumbous (Pb), tungsten (W), tin ash (SnO 2), indium oxide (In 2O 3, In 2O), indium tin oxide (ITO), au-si alloy (Au-Si), gold-tin alloy (Au-Sn), gold-germanium alloy (Au-Ge), indium aluminium alloy (made film such as In-Al).
Wherein, conductive layer 12 is the 1st conductive-type semiconductor layer 9 contacted titanium layers preferably, with the lamination electrode of the laminate of the aluminium lamination of lamination on it.Above-mentioned lamination electrode, can realize with the 1st conductive-type semiconductor layer 9 between good Ohmic be connected, and can be connected with above-mentioned the 1st conductive-type semiconductor layer 9 with high bonding strength.
Pad 14,15 for example can list by gold (Au), indium (In), gold-tin alloy solder flux (Au-Sn), sn-ag alloy solder flux (Sn-Ag), SAC alloy flux (Sn-Ag-Cu), sn-bi alloy solder flux (Sn-Bi), leypewter solder flux (formed projected electrode 14,15 such as Sn-Pb).
In the above-mentioned light-emitting component, if through projected electrode 14,15 circulating current between conductivity reflector 6 and conductive layer 12, then from above-mentioned both be injected into hole and electronics (or electronics and hole) the semiconductor layer 4, respectively in the 2nd conductive-type semiconductor layer 10 and the 1st conductive-type semiconductor layer 9 along carrying on the thickness direction, in luminescent layer 3, carry out combination again, by like this, encourage the gallium nitride compound that constitutes above-mentioned luminescent layer 3 luminous.
Afterwards, from the light of luminescent layer 3 emission, by above-mentioned the 1st conductive-type semiconductor layer 9, from the surface of emission 8, directly to the external emission of light-emitting component as the inboard 7 of semiconductor layer 4 to the 1st conductive-type semiconductor layer 9 directions.In addition, from the light from substrate farthest surface 5 directions emission of luminescent layer 3 to semiconductor layer 4, by the 2nd conductive-type semiconductor layer 10, be used as interface above-mentioned in above-mentioned the 2nd conductive-type semiconductor layer 10 and conductivity reflector 6 from 5 reflections in substrate surface farthest, from the 2nd conductive-type semiconductor layer 10, luminescent layer 3 and the 1st conductive-type semiconductor layer 9, pass through, from the outside of the above-mentioned surface of emission 8 emissions to light-emitting component.
As previously mentioned, by removing the inboard 7 of the semiconductor layer 4 that substrate 1 exposes, as the surface of emission 8 of light-emitting component.The above-mentioned surface of emission 8 can be only substrate 1 to be removed face afterwards.But, be preferably in and remove after the substrate 1, further carry out etch processes etc., clean the surface of emission 8.In addition,, improve transmissivity, be preferably in and implement to prevent the reflection processing in the above-mentioned surface of emission 8 in order to reduce by 8 pairs of reflection of light rates of the surface of emission.
Fig. 2 for explanation in the surface of emission 8 of the light-emitting component of Fig. 1 example, as preventing that reflection from handling, and be formed with the amplification view of the state that prevents reflector 16.
Prevent reflector 16, can list and have the reflection of light rate of raising, and improve the various reflector 16 that prevent of the function of transmissivity from being launched as the luminescent layer the surface of emission at the interface between gallium nitride compound semiconductor layer 4 and the air 3.Prevent the ideal example in reflector 16, can list by quartzy (SiO2), aluminium oxide inorganic material such as (Al2O3), or the formed layer of organic material such as Merlon.
Prevent from reflector 16 from just can reduce the reflection of light rate in the above-mentioned surface of emission 8 if in the surface of emission 8, be provided with, improve transmissivity, thereby prevent above-mentioned light interreflection in semiconductor layer 4.Therefore, can further improve from luminescent layer 3 send, from the emission effciency of the surface of emission 8 emission to the light of outside.
Preferably allow the refractive index that prevents reflector 16, from itself and semiconductor layer 4 contacted towards as with the outside 17 of above-mentioned opposing face, and dull the minimizing.If adopt such formation, can allow the surface of emission 8 also be the 1st conductive-type semiconductor layer 9 of semiconductor layer 4 and prevent that refractive index in the interface between the reflector 16, two-layer is approaching, improve the optical transmission rate in the above-mentioned interface, simultaneously, refractive index in 17 interfaces that also promptly prevent between reflector 16 and the space, two-layer is approaching outside allowing, and improves the optical transmission rate in the above-mentioned interface.Therefore, can further improve optical transmission rate in the surface of emission 8.In order to allow the refractive index that prevents reflector 16, dull as previously mentioned the minimizing for example can form the above-mentioned reflector 16 that prevents by a plurality of layers different laminate of refractive index.
In addition, prevent the thickness t in reflector 16 1, be preferably formed as the light launched for above-mentioned luminescent layer 3 at above-mentioned 1/4 of the wavelength in the reflector 16 that prevents.By such formation, can be in preventing reflector 16, allow the light of multipath reflection weaken mutually and be easy to generate interference, therefore, can be suppressed at above-mentioned preventing and produce standing waves in the reflector 16, further improve the light transmission in the surface of emission 8.
Fig. 3 for explanation the semiconductor layer 4 of the light-emitting component of Fig. 1 example, as with the surface of emission 8 of the inboard 7 of the 1st conductive-type semiconductor layer 9 in, handle as preventing reflection, and form a plurality of projections or recess, allow the above-mentioned surface of emission 8 become the amplification view of the state of male and fomale(M﹠F).In addition, Fig. 4 for explanation in order to allow the surface of emission 8 become male and fomale(M﹠F), and in the above-mentioned surface of emission 8 amplification view of an example of formed projection 18.
With reference to these two figure, this routine projection 18 forms: the external diameter of the size of the direction that the conduct of above-mentioned projection 18 is vertical with short transverse, and from the base portion 19 of projection 18 20 dull reduce coniform apicad.If above-mentioned projection 18 is set, just the surface of emission 8 can be formed by the set as the taper seat on relatively vertical with the lamination direction of semiconductor layer 4 surfaces plane inclination, a plurality of projections 18.Therefore, launch and incide in the light the surface of emission 8 from luminescent layer 3, surpassed the critical angle that sets by the interface between semiconductor layer 4 and the air because of incidence angle, thereby by total reflection components in proportions, with the surface of emission 8 is that the situation on plane is compared and can be reduced, thereby can reduce the reflection of light rate in the surface of emission 8, improve transmissivity.
In addition, be provided with in the surface of emission 8 of a plurality of conical papillas 18 the apparent refractive index of the 1st conductive-type semiconductor layer 9, base portion 19 20 dull minimizings apicad from circular cone, even in this one side of refractive index, also can reduce the reflection of light rate in the surface of emission 8, improve transmissivity.Therefore, can further improve from luminescent layer 3 and send and from the emission effciency of the surface of emission 8 to the light of external emission.
In addition, projection 18 can form the pyramid-shaped that the bottom surface is an arbitrary polygon.In the projection 18 of coniform or pyramid-shaped, constitute the bus of its conical surface, can form the curve-like that does not have flex point.In addition, projection 18 can also form for example hemispherical.Projection 18 with such shape also can access the effect identical with above-mentioned conical papilla.
The size of the direction vertical of the base portion 19 of projection 18 (outside diameter d 1 in the circular cone) with short transverse, wavelength 1 times below of light in being formed with the 1st conductive-type semiconductor layer 9 of above-mentioned projection 18 of being launched for luminescent layer 3, and, the height h1 of projection 18 is more than 1 times of above-mentioned wavelength, like this, preferably improve above-mentioned effect by projection 18.
Fig. 5 explanation is in order to allow the surface of emission 8 become male and fomale(M﹠F), and in the above-mentioned surface of emission 8 amplification view of an example of formed recess 21.With reference to Fig. 3 and Fig. 5, this routine recess 21 forms: the internal diameter of the size of the direction that the conduct of above-mentioned recess 21 is vertical with depth direction, from the peristome 22 of recess 21 to deepest point 23 dull reduce coniform.If above-mentioned recess 21 is set, just the surface of emission 8 can by as relatively and the set of the taper seat on perpendicular surface plane inclination, above-mentioned recess 21 of the lamination direction of semiconductor layer 4 form.Therefore, launch and incide in the light the surface of emission 8 from luminescent layer 3, surpassed the critical angle that sets by the interface between semiconductor layer 4 and the air because of incidence angle, thereby by total reflection components in proportions, with the surface of emission 8 is that the situation on plane is compared and can be reduced, thereby can reduce the reflection of light rate in the surface of emission 8, improve transmissivity.
In addition, be provided with in a plurality of surface of emissions 8 by recess that taper seat forms 21, the apparent refractive index of the 1st conductive-type semiconductor layer 9, from deepest point 23 to peristome 22 dull minimizings as the base portion of circular cone, even in this one side of refractive index, also can reduce the reflection of light rate in the surface of emission 8, improve transmissivity.Therefore, can further improve from luminescent layer 3 and send and from the emission effciency of the surface of emission 8 to the light of external emission.
In addition, recess 21, the peristome 22 that is equivalent to the bottom surface can form by the pyramidal surface of arbitrary polygon.In the formed recess 21 by coniform or pyramid-shaped, constitute the bus of its conical surface, can form the curve-like that does not have flex point.In addition, recess 21 can also form for example hemispherical.Recess 21 with such shape, also can access with by the identical effect of the formed recess of above-mentioned taper seat.
The size of the direction vertical of the peristome 22 of recess 21 (inner diameter d 2 in the taper seat) with depth direction, below 1 times of being launched for luminescent layer 3 of the wavelength of light in the conductive-type semiconductor layer 9 that is formed with above-mentioned recess 21, and, the degree of depth h2 of recess 21 is more than 1 times of above-mentioned wavelength, like this, it is very desirable improving above-mentioned effect by recess 21.
Fig. 6, Fig. 7 are the amplification view of the variation of the surface of emission 8.
With reference to Fig. 6, in this example, on the surface of emission 8 as the inboard 7 of the 1st conductive-type semiconductor layer 9 in the semiconductor layer 4 of the light-emitting component of Fig. 1 example, be formed with and prevent reflector 6, simultaneously, in the above-mentioned outside 17 that prevents reflector 6, be formed with projection or recess, make above-mentioned outside 17 become male and fomale(M﹠F).Prevent reflector 6 can list have with above-mentioned Fig. 2 example in identical formation prevent reflector 6.In addition, the shape and the size of formed projection or recess are identical with the example of Fig. 3～Fig. 5 in the above-mentioned outside 17 that prevents reflector 6.In addition, the outside diameter d 1 of the base portion 19 of projection 18 and height h1, with the inner diameter d 2 and the degree of depth h2 of the peristome 22 of recess 21, the light of being launched with luminescent layer 3 prevents that above-mentioned wavelength in the reflector 6 from being that benchmark is stipulated.
With reference to Fig. 7, in this example, on the surface of emission 8 as the inboard 7 of the 1st conductive-type semiconductor layer 9 in the semiconductor layer 4 of the light-emitting component of Fig. 1 example, be formed with projection or recess, make the above-mentioned surface of emission 8 become male and fomale(M﹠F), form again afterwards and prevent reflector 6.The shape of formed projection or recess and size in the surface of emission 8 are identical with the example of Fig. 3～Fig. 5.In addition, prevent reflector 6 can list have with above-mentioned Fig. 2 example in identical formation prevent reflector 6.
According to above-mentioned formation,, can further improve from luminescent layer 3 and send and from the outside emission effciency of the light of emission of the surface of emission 8 by preventing the composite action of reflector 6 and male and fomale(M﹠F).
In order on the surface of emission 8 or outside 17, to form projection 18 or recess 21, photoetching technique and dry type or Wet-type etching can be combined, above-mentioned any face is selectively carried out etching.Above-mentioned projection 18 or recess 21, on the surface of emission 8 or outside 17, be formed with as far as possible very close to each otherly a plurality of, very desirable for the emission effciency of improving light.
Fig. 8～Figure 13 is respectively the cutaway view of explanation by the operation of the light-emitting component of manufacture method shop drawings 1 of the present invention.
With reference to Fig. 8, in the manufacture method of the present invention, at first, in the surface 2 of substrate 1, the epitaxial growth gallium nitride compound forms the gallium nitride compound semiconductor layer 4 with multi-ply construction.As with above-mentioned semiconductor layer 4, the method for epitaxial growth on substrate 1, organometallic chemistry gaseous state flop-in method (MOCVD) are desirable especially.By MOCVD, can allow each layer that constitutes semiconductor layer 4, in the surface 2 of substrate 1, epitaxial growth continuously.
Also be, the growth that substrate 1 is arranged on the device that is used for implementing above-mentioned MOCVD is indoor, the temperature of keeping aforesaid substrate 1 is to be suitable for growing up the temperature of each layer, simultaneously, the unstrpped gas that forms each floor is imported in the growth chamber, carry out chemical reaction, allow gallium nitride compound be deposited on the surface 2 of substrate 1 with given composition on the surface 2 of substrate 1, by each layer being carried out aforesaid operations repeatedly, just can form having the semiconductor layer 4 of given lamination structure.
For example, substrate 1 can use the formed substrate 1 of monocrystal by zirconium boride (ZrB2), titanium boride borides such as (TiB2), simultaneously, in the surface 2 of aforesaid substrate 1, form under foregoing, the situation,, at first maintain under 400～950 ℃ the state in the temperature that will be arranged on the indoor substrate 1 of growing up by the semiconductor layer 4 that constituted of layer of a plurality of gallium nitride compounds that comprise resilient coating, in the surface 2 of aforesaid substrate 1, form by aluminium nitride (AlN) or aluminium gallium nitride alloy (Al xGa 1 -xN, x satisfies 0≤x＜1, is under the situation of zirconium boride at substrate 1, x=0.24) made resilient coating.
Next, with the temperature maintenance of substrate 1 under 950～1150 ℃ state, on above-mentioned resilient coating, form after the n type cover layer that is constituted by gallium nitride (GaN), under the temperature maintenance with substrate 1 was state about 700 ℃, lamination was by InGaN (In 0.02Ga 0.98N) the 2n type cover layer that is constituted forms the 1st conductive-type semiconductor layer 9 as the n type semiconductor layer of double-layer structural.
Next, under the temperature maintenance with substrate 1 was state about 700 ℃, on above-mentioned the 1st conductive-type semiconductor layer 9, mutual lamination was by InGaN (In 0.01Ga 0.99N) barrier layer that is constituted, with InGaN (In 0.11Ga 0.89N) the trap layer that is constituted, and allow the orlop and the superiors be barrier layers, form multi layer quantum well layer (MQW), as luminescent layer 3 as super grid elements.
Afterwards, under the temperature maintenance with substrate 1 is state about 700 ℃, on above-mentioned luminescent layer 3, form by aluminium gallium nitride alloy (Al 0.2Ga 0.8N) after the made 1p type cover layer, under the temperature maintenance with substrate 1 was state about 820 ℃, lamination was by aluminium gallium nitride alloy (Al 0.2Ga 0.8N) made 2p type cover layer, and then, be that lamination is by the made p type contact layer of gallium nitride (GaN) under 820～1050 ℃ the state in temperature maintenance with substrate 1, formation has so just formed semiconductor layer 4 as the 2nd conductive-type semiconductor layer 10 of the p type semiconductor layer of 3 layers of structure.
With reference to Fig. 9, in the manufacture method of the present invention, next, in substrate surface 5 farthest, form conductivity reflector 6 by vacuum vapour deposition or sputtering method the semiconductor layer 4 on the surface that is formed on substrate 1, vertical with the lamination direction.
Next, with reference to Figure 10～Figure 11, part with luminescent layer in the semiconductor layer 43 and the 2nd conductive-type semiconductor layer 10, conductivity reflector 6 on being formed on above-mentioned the 2nd conductive-type semiconductor layer 10, remove by dry type or Wet-type etching, allow the part on the surface vertical 11 of the 1st conductive-type semiconductor layer 9 expose with the lamination direction, exposed above-mentioned surperficial 11 in, after vacuum vapour deposition or sputtering method formation conductive layer 12, on formed conductive layer 12, in the outside 7 in conductivity reflector 6, connect projected electrode 14 respectively, 15.Projected electrode 14,15, for example by methods such as silk screen printings, the conductivity slip that will contain its feed metal forms figure in given flat shape.
Next,, after semiconductor layer 4, conductivity reflector 6, conductive layer 12 and projected electrode 14,15 covered by protective layer 24, substrate 1 is removed, allowed the inboard 7 of semiconductor layer 4 expose with reference to Figure 12～Figure 13.
Protective layer 24 can form by mineral-type or organic class material that can bear the operation of removing substrate 1.Protective layer 24, by containing the coating material of above-mentioned material, methods such as use spin coating cover, and above-mentioned various piece is covered and forms.
In order to remove substrate 1, can from the various removal methods of chemistry or physics,, select the most appropriate removal method to implement according to the material of aforesaid substrate 1.For example, substrate 1 by the formed situation of zirconium boride monocrystal under, acid etc. as etchant, is carried out chemical etching to aforesaid substrate 1.In addition, under the situation that substrate 1 is formed by sapphire, can be the interface that laser about 370nm comes irradiated substrate 1 and semiconductor layer 4 by wavelength, allow the part dissolving of semiconductor layer 4, thereby make substrate 1 break away from.
Afterwards, as required, etch cleaned is carried out in the inboard 7 of the semiconductor layer 4 that exposes, next, for example remove after the protective layer 24,, produce light-emitting component as shown in Figure 1 above-mentioned inboard 7 the surface of emissions 8 as light by dry-etching.
Manufacture method by the invention described above; in the operation of removing substrate 1; semiconductor layer 4, conductivity reflector 6, conductive layer 12 and projected electrode 14,15 are covered by protective layer 24; therefore, can prevent these layers for example be used to remove etching liquid of substrate 1 etc. pollute, corrode.In addition, can also carry out machinery to above-mentioned each layer by protective layer 24 and strengthen, therefore, can prevent these ply stress distortion.Therefore,, can prevent because of producing the decline of the various bad rate of finished productss that cause such as above-mentioned pollution, burn into distortion by manufacture method of the present invention, thus can high production rate, make light-emitting component efficiently.
In the surface of emission 8; form the foregoing reflector 16 that prevents, or at the above-mentioned surface of emission 8 or prevent in the outside 17 in reflector 16, form projection 18 or recess 21; thereby become under the situation of male and fomale(M﹠F), can carry out these processing in any time of removing protective layer 24 front and back.But consider that protection constitutes above-mentioned each layer of light-emitting component, then be preferably in and remove before the protective layer 24, carry out above-mentioned processing.
Lighting device of the present invention by the light-emitting component with the invention described above, combines with at least one side in fluorophor and the phosphor and constitutes.Above-mentioned fluorophor, phosphor, can use wavelength about 350～400, the blue light launched from the surface of emission of light-emitting component by irradiation separately to ultraviolet region, and send the various fluorophor and/or the phosphor of light arbitrarily, perhaps combine two or more.
The lighting device of the invention described above, as light source, therefore, specific energy consumption is very good with light-emitting component of the present invention, particularly, can realize the above specific energy consumption of twice of fluorescent lamp.
Figure 14 is another routine cutaway view of the layer structure of explanation light-emitting component of the present invention.With reference to Figure 14, the light-emitting component of illustrative example has on the surface of the substrate that does not show: the gallium nitride compound semiconductor layer 4 of that the gallium nitride compound epitaxial growth forms by allowing, as to comprise luminescent layer 3 multi-ply construction in the drawings; Above-mentioned semiconductor layer 4 perpendicular to the lamination direction in substrate surface 5 farthest with status of electrically connecting light transmissive light transmission conductive layer 25 that form, that have conductivity and be used for allowing above-mentioned luminescent layer 3 be launched, with above-mentioned light transmission conductive layer 25 as with the outside 26 of the opposing face of 4 contacted of semiconductor layers, as the surface of emission 8 of the light emission that is used for above-mentioned luminescent layer 3 is sent to the outside of semiconductor layer 4.Semiconductor layer 4 is by lamination the 1st conductive-type semiconductor layer 9, above-mentioned luminescent layer 3 and the 2nd conductive-type semiconductor layer 10 constitute in turn on the surface of substrate.
By removing substrate, allow after the exposing of semiconductor layer 4 with substrate contacted inboard 7, on the inboard 7 of being exposed, formation is used for reflector 27 that the light that luminescent layer 3 is launched is reflected, simultaneously, with above-mentioned reflector 27 as with the outside 28 of the opposing face of 4 contacted of semiconductor layers in, engage supporter 29.
By removing the part of luminescent layer 3 and the 2nd conductive-type semiconductor layer 10, allow the part on the surface vertical 11 of the 1st conductive-type semiconductor layer 9 expose with the lamination direction, that is exposed above-mentioned surperficial 11 is connected with conductive layer 12.The outside 26 of light transmission conductive layer 25 is connected with electrode pad 30.
In the above-mentioned light-emitting component, in the removal of gallium nitride compound semiconductor layer 4 in the inboard 7 of substrate, be formed with and be used for reflecting the reflection of light layer 27 that luminescent layer 3 is launched, because above-mentioned light can not pass through substrate, and, therefore can eliminate the problem of substrate to the absorption and the decay of light from as outwards launching at the surface of emission 8 of the outside 26 of formed light transmission conductive layer 25 from substrate surface 5 farthest of above-mentioned semiconductor layer 4.
In addition, because substrate and optical transmission are irrelevant, therefore do not need to consider light transmission etc.So, substrate can be selected to use and can allow gallium nitride compound semiconductor layer 4 and lattice constant mate, pass through epitaxial growth, form the substrate of the better and above-mentioned semiconductor layer 4 that luminous efficiency is good of crystalline quality in its surface, thereby can improve the luminous efficiency of formed semiconductor layer 4.
In addition, the back forms reflector 27 on the inboard 7 of the above-mentioned conductor layer 4 that forms by epitaxial growth,, its material and structure are also unqualified.Therefore, reflector 27, can select to use particularly to wavelength be about 350～400 blueness to the good reflector 27 of the reflection of light rate of ultraviolet region, thereby can improve reflection of light rate in the above-mentioned reflector 27.
In addition, form light transmission conductive layer 25 in the back on substrate surface 5 farthest of the above-mentioned conductor layer 4 that forms by epitaxial growth, its material and structure are also unqualified.Therefore, light transmission conductive layer 25, can use particularly to wavelength be about 350～400 blueness to the good light transmission conductive layer 25 of the perspective rate of the light of ultraviolet region, thereby can improve optical transmission rate in the above-mentioned light transmission conductive layer 25.
Therefore,,, can improve significantly that luminescent layer 3 is launched and the emission effciency of the light that outwards penetrate from the surface of emission 8, thereby can pass through quite little power, obtain quite high luminous intensity by the combination of above-mentioned each effect according to above-mentioned light-emitting component.
In addition, semiconductor layer 4 just can be strengthened by above-mentioned supporter 29 with after supporter 29 engages in the outside 28 in above-mentioned reflector 27, therefore can improve the intensity of light-emitting component, and make its easy installation.For example, can be with the pedestal of above-mentioned supporter 29 as light-emitting component, above-mentioned light-emitting component is installed in the encapsulation etc. reliably.And, after removing substrate and having formed reflector 27, the upper support of rejoining body 29, its material and structure etc. are also without limits.Therefore, supporter 29 can be selected to use with above-mentioned semiconductor layer 4 thermal coefficient of expansions approaching, or the material of desired characteristic good such as thermal conduction characteristic, conductive characteristic, mechanical property, thereby can improve the reliability of light-emitting component.
In above-mentioned each one, substrate, semiconductor layer 4 and conductive layer 12, can by with the example of above-mentioned Fig. 1 in identical materials, constitute equally.
Light transmission conductive layer 25 can list the light that can lossless perspective luminescent layer 3 be sent, and has conductivity simultaneously, and can realize being connected with the good ohmic of the 2nd conductive-type semiconductor layer 10, by the formed layer of various materials.
At the 2nd conductive-type semiconductor layer 10 is under the situation of p type semiconductor layer, be suitable for the light transmission conductive layer 25 that combines with above-mentioned the 2nd conductive-type semiconductor layer 10, can list by aluminium (Al), titanium (Ti), nickel (Ni), chromium (Cr), indium (In), tin (Sn), molybdenum (Mo), silver (Ag), gold (Au), niobium (Nb), tantalum (Ta), vanadium (V), platinum (Pt), plumbous (Pb), beryllium (Be), au-si alloy (Au-Si), gold-germanium alloy (Au-Ge), the gold kirsite (Au-Zn), and golden beryllium alloy (Au-Be) etc. is made, thereby with the thin film of thickness setting, and tin ash (SnO with light transmission 2), indium oxide (In 2O 3), indium tin oxide ELD such as (ITO) etc.Light transmission conductor layer 25 can also use the two-layer above laminate of above-mentioned each film.
Wherein, light transmission conductive layer 25, preferably as with the thin layer of the 2nd conductive-type semiconductor layer 10 contacted nickel, with the semitransparent electrode of the laminate of the thin layer of the gold of lamination on it.Above-mentioned semitransparent electrode, can realize with the 2nd conductive-type semiconductor layer 10 between good Ohmic be connected, evenly switch on for semiconductor layer 4.
In addition, light transmission conductive layer 25 can also be formed the flat shape with perforation, the semiconductor layer 4 that exposes at above-mentioned perforated portion branch from substrate surface 5 farthest, as the surface of emission 8 of light.In this case, can suppress the reduction of the optical transmission rate that light transmission conductive layer 25 caused, thereby can improve further that luminescent layer 3 sends and from the outside emission effciency of the light of emission of the surface of emission 8.
Reflector 27, can list the light that can lossless reflection luminescent layer 3 be sent by the formed layer of various materials.Can list the layer of surface smoothing.In addition, the surface in reflector 27 is not necessarily very level and smooth, but under rough situation, reduces reflectivity sometimes, therefore should be noted that.In addition, reflector 27 can not be a metal level also, if can reverberation just can, but in general, if pyroconductivity good metal layer, just heating that can be when luminous, 27 good the shedding through the reflector.
Above-mentioned reflector 27 can list by aluminium (Al), titanium (Ti), nickel (Ni), chromium (Cr), indium (In), tin (Sn), molybdenum (Mo), silver (Ag), gold (Au), niobium (Nb), tantalum (Ta), vanadium (V), platinum (Pt), plumbous (Pb), beryllium (Be), tin ash (SnO 2), indium oxide (In 2O 3), indium tin oxide (ITO), au-si alloy (Au-Si), gold-germanium alloy (Au-Ge), golden kirsite (Au-Zn) and golden beryllium alloy (made film such as Au-Be).
Reflector 27 can be a monolayer constructions will, also can be for example by forming the different two-layer above long-pending layer by layer lamination structure that forms of material.
Reflector 27, preferably by blueness that the luminescent layer 3 of above-mentioned semiconductor layer 4 is launched to the reflection of light rate of ultraviolet region good, titanium, aluminium or silver-colored formed film.
Supporter 29 as previously mentioned, can select to use with above-mentioned semiconductor layer 4 thermal coefficient of expansions approaching, or the material of desired characteristic good such as thermal conduction characteristic, conductive characteristic, mechanical property.Above-mentioned supporter 29 can list by aluminium nitride (AlN), carborundum (SiC), copper (Cu), copper-tungsten (Cu-W), silicon formed supporters 29 such as (Si).Wherein, preferably pass through the formed supporter 29 of silicon of above-mentioned each characteristic good.
In addition, because silicon is very good in the processability this point as one of mechanical property, therefore,, also has the advantage of the batch that can improve light-emitting component by using silicon as supporter 29.Also promptly, in the manufacturing of actual light-emitting component, in the gamut on the substrate with the size that comprises a plurality of light-emitting components (wafer) surface, form have with aforesaid substrate much at one the 1st conductive-type semiconductor layer 9 to the light transmission conductive layer 25 of size wait each layer.Next, in the given place in the zone of each light-emitting component on the surface 26 of light transmission conductive layer 25, form electrode pad 30, simultaneously, with the part removal of luminescent layer 3 and the 2nd conductive-type semiconductor layer 10 in the given place in the zone of each light-emitting component, by like this, allow the part on surface 11 of the 1st conductive-type semiconductor layer 9 expose, exposed above-mentioned surperficial 11 in, form electrode pad 12.
Afterwards, full surface in the inboard 7 of having removed substrate and having exposed, formation has the reflector 27 with aforesaid substrate size about the same, next, in the full surface of the outside 28 in above-mentioned reflector 27, joint has after the supporter 29 with aforesaid substrate size about the same, cuts each zone, produces a plurality of light-emitting components.Therefore, if use the made supporter 29 of silicon of excellent processability, the processability in the time of then can improving above-mentioned cutting can be easy to cut each light-emitting component, thereby can improve the production of light-emitting component.
Electrode pad 30, can list titanium (Ti) film or with the thin layer of light transmission conductive layer 26 contacted titaniums (Ti), with the laminate of the thin layer of the gold (Au) of lamination on it.Electrode pad 30 can also be connected with conductive layer 12.
In the above-mentioned light-emitting component, if between light transmission conductive layer 25 and conductive layer 12, flow through electric current, then from above-mentioned both be injected into hole and electronics (or electronics and hole) the semiconductor layer 4, respectively in the 2nd conductive-type semiconductor layer 10 and the 1st conductive-type semiconductor layer 9 along carrying on the thickness direction, in luminescent layer 3, carry out combination again, by like this, encourage the gallium nitride compound that constitutes above-mentioned luminescent layer 3 luminous.
Afterwards, from the light from substrate farthest surface 5 directions of luminescent layer 3 emissions to semiconductor layer 4, by the 2nd conductive-type semiconductor layer 10 and light transmission conductive layer 25, from as the outside 26 of above-mentioned light transmission conductive layer 25 the surface of emission 8, directly to the external emission of light-emitting component.In addition, from the light of luminescent layer 3 to the emission of the 1st conductive-type semiconductor layer 9 directions, by above-mentioned the 1st conductive-type semiconductor layer 9, reflected with the inboard 7 of the semiconductor layer 4 at the interface in reflector 27 by above-mentioned the 1st conductive-type semiconductor layer 9, from the 1st conductive-type semiconductor layer 9, luminescent layer the 3, the 2nd conductive-type semiconductor layer 10 and light transmission conductive layer 25, pass through, from the external emission of the above-mentioned surface of emission 8 to light-emitting component.
In the light-emitting component of Figure 14 example, semiconductor layer 4 between substrate surface 5 and light transmission conductive layer 25 farthest, or in the outside 26 of light transmission conductive layer 25, can form and prevent the reflector, in this case, can reduce the reflection of light rate in above-mentioned any face, improve transmissivity, thereby prevent above-mentioned light interreflection in semiconductor layer 4.Therefore, can further improve from luminescent layer 3 send, from the emission effciency of the surface of emission 8 emission to the light of outside.
Prevent that the reflector can be by constituting with above-mentioned Fig. 2 example identical materials equally.For example, preferably allow the refractive index that prevents the reflector, from itself and semiconductor layer 4 contacted towards with 25 contacted of light transmission conductive layers, perhaps from itself and light transmission conductive layer 25 contacted towards with the outside of above-mentioned opposing face, and dull the minimizing.In addition, prevent the thickness in reflector, be preferably formed as the light launched for above-mentioned luminescent layer 3 at above-mentioned 1/4 of the wavelength in the reflector that prevents.
By with the purpose that prevents that the reflector is identical, can semiconductor layer 4 from substrate surface 5 farthest, or prevent the outside in reflector, form a plurality of projections, simultaneously, preferably allow the size of the direction vertical of above-mentioned projection, reduce to the top dullness from the base portion of projection with short transverse.
Projection can constitute equally with the example situation of above-mentioned Fig. 4.For example, projection can form coniform, pyramid-shaped, or forms the curvilinear shape that does not have flex point by the bus that constitutes circular cone or pyramid, or arbitrary shape such as hemispherical.In addition, the size of the direction vertical with short transverse of the base portion of projection be preferably wavelength 1 times below of light in being formed with the layer of above-mentioned projection that luminescent layer 3 is launched, and the height of projection is more than 1 times of above-mentioned wavelength.
In addition, by with the purpose that prevents that the reflector is identical, can semiconductor layer 4 from substrate surface 5 farthest, or prevent from the outside in reflector to form a plurality of recesses, simultaneously, preferably allow the size of the direction vertical of above-mentioned recess, reduce to the bottom dullness from the peristome of recess with depth direction.
Recess can constitute equally with the example situation of above-mentioned Fig. 5.For example, recess can be by coniform, pyramid-shaped, or forms the curvilinear shape that does not have flex point by the bus that constitutes circular cone or pyramid, or arbitrary shape such as hemispherical forms.。In addition, the size of the direction vertical with depth direction of the peristome of recess be preferably wavelength 1 times below of light in being formed with the layer of above-mentioned recess that luminescent layer is launched, and concave depth is more than 1 times of above-mentioned wavelength.
Figure 15～Figure 20 is respectively the cutaway view of explanation by the operation of the light-emitting component of manufacture method manufacturing Figure 14 of the present invention.
With reference to Figure 15, in the manufacture method of the present invention, at first, in the surface 2 of substrate 1, the epitaxial growth gallium nitride compound forms the gallium nitride compound semiconductor layer 4 with multi-ply construction.With above-mentioned semiconductor layer 4, the method for epitaxial growth on substrate 1, as previously mentioned.
Next with reference to Figure 16, the semiconductor layer 4 on the surface 2 that is formed on substrate 1, vertical with the lamination direction in substrate surface 5 farthest, after vacuum vapour deposition or sputtering method formation light transmission conductive layer 25, in the outside 26 of formed light transmission conductive layer 25, form electrode pad 30 by vacuum vapour deposition or sputtering method.
Next, with reference to Figure 17, part with luminescent layer in the semiconductor layer 43 and the 2nd conductive-type semiconductor layer 10, light transmission conductive layer 25 on being formed on above-mentioned the 2nd conductive-type semiconductor layer 10, remove by dry type or Wet-type etching, allow after the part on the surface vertical with the lamination direction 11 of the 1st conductive-type semiconductor layer 9 exposes, exposed above-mentioned surperficial 11 in, form conductive layer 12 by vacuum vapour deposition or sputtering method.
Next; with reference to Figure 18～Figure 20; after semiconductor layer 4, light transmission conductive layer 25 and electrode pad 30 covered by protective layer 24; substrate 1 is removed; allow the inboard 7 of semiconductor layer 4 expose; carry out as required after the etch cleaned processing, on above-mentioned inboard 7, form reflector 27 by vacuum vapour deposition or sputtering method.
Afterwards, in the outside 28 in reflector 27, engage supporter 29, next, for example remove after the protective layer 24, produce light-emitting component as shown in figure 14 by dry-etching.
Manufacture method by the invention described above; in the operation of removing substrate 1; semiconductor layer 4, conductive layer 12, light transmission conductive layer 25 and projected electrode 30 are covered by protective layer 24; therefore, can prevent these layers for example be used to remove etching liquid of substrate 1 etc. pollute, corrode.In addition, can also carry out machinery to above-mentioned each layer by protective layer 24 and strengthen, therefore, can prevent these ply stress distortion.Therefore,, can prevent because of producing the decline of the various bad rate of finished productss that cause such as above-mentioned pollution, burn into distortion by manufacture method of the present invention, thus can high production rate, make light-emitting component efficiently.
Lighting device of the present invention by the light-emitting component with the invention described above, combines with at least one side in fluorophor and the phosphor and constitutes.Above-mentioned fluorophor, phosphor, can use wavelength about 350～400, the blue light launched from the surface of emission of light-emitting component by irradiation separately to ultraviolet region, and send the various fluorophor and/or the phosphor of light arbitrarily, perhaps combine two or more.
The lighting device of the invention described above, as light source, therefore, specific energy consumption is very good with light-emitting component of the present invention, particularly, can realize the above specific energy consumption of twice of fluorescent lamp.
Figure 21 is another routine cutaway view of the layer structure of explanation light-emitting component of the present invention.With reference to Figure 21, the light-emitting component of illustrative example does not have on the surface of the substrate that shows in the drawings: comprise by allowing the gallium nitride compound semiconductor layer 4 of multi-ply construction of the luminescent layer 3 that the gallium nitride compound epitaxial growth forms; And above-mentioned semiconductor layer 4 perpendicular to the lamination direction in substrate surface 5 farthest with status of electrically connecting light transmissive the 1st conductive layer 31 that form, that have conductivity and be used for allowing above-mentioned luminescent layer 3 be launched as the light transmission conductive layer, with outside 32 above-mentioned the 1st conductive layer 31 and opposing face 4 contacted of semiconductor layers, as the surface of emission 8 of the light emission that is used for above-mentioned luminescent layer 3 is sent to the outside of semiconductor layer 4.Semiconductor layer 4 is by lamination the 1st conductive-type semiconductor layer 9, above-mentioned luminescent layer 3 and the 2nd conductive-type semiconductor layer 10 constitute in turn on the surface of substrate.The outside 32 of the 1st conductive layer 31 is connected with electrode pad 30.
By removing substrate, allow after the exposing of semiconductor layer 4 with substrate contacted inboard 7, on the inboard 7 of being exposed, under the state that is electrically connected, formation is used for the 2nd conductive layer 33 as the conductivity reflector that the light that luminescent layer 3 is launched is reflected, simultaneously, with above-mentioned the 2nd conductive layer 33 as with the outside 34 of the opposing face of 4 contacted of semiconductor layers in, engaging has supporter 29.
In the above-mentioned light-emitting component, in the removal of gallium nitride compound semiconductor layer 4 in the inboard 7 of substrate, be formed with the 2nd conductive layer 33 that is used for reflecting the light that luminescent layer 3 launched, because the light that luminescent layer 3 is launched can not pass through substrate, and from above-mentioned semiconductor layer 4 formed from substrate surface 5 farthest, outwards launch as the surface of emission 8 of the outside 32 of the 1st conductive layer 31 of light transmission conductive layer, therefore can eliminate the problem of substrate to the absorption and the decay of light.
In addition, substrate owing to have nothing to do with optical transmission, does not therefore need to consider light transmission etc. as previously mentioned.So, substrate can be selected to use and can allow gallium nitride compound semiconductor layer 4 and lattice constant mate, pass through epitaxial growth, form the substrate of the better and above-mentioned semiconductor layer 4 that luminous efficiency is good of crystalline quality in its surface, thereby can improve the luminous efficiency of formed semiconductor layer 4.
The back forms the 2nd conductive layer 33 on the inboard 7 of the above-mentioned conductor layer 4 that forms by epitaxial growth in addition,, its material and structure are also unqualified.Therefore, the 2nd conductive layer 33, can select to use particularly to wavelength be about 350～400 blueness to the good conductivity reflector of the reflection of light rate of ultraviolet region, thereby can improve reflection of light rate in above-mentioned the 2nd conductive layer 33.
In addition, the back on substrate surface 5 farthest of the above-mentioned conductor layer 4 that forms by epitaxial growth forms the 1st conductive layer 31,, its material and structure are also unqualified.Therefore, the 1st conductive layer 31, can use particularly to wavelength be about 350～400 blueness to the good light transmission conductive layer of the reflection of light rate of ultraviolet region, thereby can improve optical transmission rate in above-mentioned the 1st conductive layer 31.
Therefore,,, can improve significantly that luminescent layer 3 is launched and the emission effciency of the light that outwards penetrate from the surface of emission 8, thereby can pass through quite little power, obtain quite high luminous intensity by the combination of above-mentioned each effect according to above-mentioned light-emitting component.
In addition, semiconductor layer 4 just can be strengthened by above-mentioned supporter 29 with after supporter 29 engages in the outside 34 of above-mentioned the 2nd conductive layer 33, therefore can improve the intensity of light-emitting component, and make its easy installation.For example, can be with the pedestal of above-mentioned supporter 29 as light-emitting component, above-mentioned light-emitting component is installed in the encapsulation etc. reliably.And, after removing substrate and having formed the 2nd conductive layer 33, the upper support of rejoining body 29, its material and structure etc. are also without limits.Therefore, supporter 29 can be selected to use with above-mentioned semiconductor layer 4 thermal coefficient of expansions approaching, or the material of desired characteristic good such as thermal conduction characteristic, conductive characteristic, mechanical property, thereby can improve the reliability of light-emitting component.In addition, particularly,, then can also simplify the wiring of many 2nd conductive layers 33 if use material as supporter 29 with conductivity, and the installation of light-emitting component in encapsulation etc.In addition, if use material, then can guarantee the insulating properties between the 2nd conductive layer 33 and the encapsulation etc. as supporter 9 with insulating properties or semiconduction.
In addition, among the present invention, also can allow the 1st conductive layer 31 be the conductivity reflector, the 2nd conductive layer 33 is the light transmission conductive layer.In this case too, the material of the 2nd conductive layer 33 and structure are also unqualified, therefore, can select to use and have conductivity, simultaneously, particularly to blueness to the good light transmission conductive layer of the optical transmission rate of ultraviolet region, thereby can improve optical transmission rate in above-mentioned the 2nd conductive layer 33.Therefore,, therefore particularly 1st conductive layer 31 of blueness to the good conductivity reflector of the reflection of light rate of ultraviolet region combined, can improve emitting component by having material and structure to limit equally with conduct.In this case, supporter 29 can engage with the outside 32 of the 1st conductive layer 31.
In above-mentioned each one, substrate, semiconductor layer 4 and conductive layer 12, can by with the example of above-mentioned Fig. 1 in identical materials, constitute equally.In addition, electrode pad 30, as the 1st conductive layer 31 of light transmission conductive layer and as the 2nd conductive layer 33 in conductivity reflector, can by with the example of above-mentioned Figure 14 in identical materials, constitute equally.
Supporter 29, also can by with the example of above-mentioned Figure 14 in identical materials, constitute equally, particularly very desirable by the formed supporter 19 of silicon.In order to add conductivity for the made supporter of silicon 29, can sneak into dopant therein.
In addition, the 1st conductive layer 31 can also be formed the flat shape with perforation, the semiconductor layer 4 that exposes at above-mentioned perforated portion branch from substrate surface 5 farthest, as the surface of emission 8 of light.In this case, can suppress the reduction of the optical transmission rate that the 1st conductive layer 31 caused, thereby can improve further that luminescent layer 3 sends and from the outside emission effciency of the light of emission of the surface of emission 8.
In the above-mentioned light-emitting component, if between the 1st and the 2nd conductive layer 31,33, flow through electric current, then from above-mentioned both be injected into hole and electronics (or electronics and hole) the semiconductor layer 4, respectively in the 2nd conductive-type semiconductor layer 10 and the 1st conductive-type semiconductor layer 9 along carrying on the thickness direction, in luminescent layer 3, carry out combination again, by like this, encourage the gallium nitride compound that constitutes above-mentioned luminescent layer 3 luminous.
Afterwards, from the light from substrate farthest surface 5 directions of luminescent layer 3 emissions to semiconductor layer 4, by 1st conductive layer 31 of the 2nd conductive-type semiconductor layer 10,, directly launch outside to light-emitting component from the surface of emission 8 of the outside 32 of above-mentioned the 1st conductive layer 31 with the light transmission conductive layer.In addition, from the light of luminescent layer 3 emissions to the 1st conductive-type semiconductor layer 9 directions, by above-mentioned the 1st conductive-type semiconductor layer 9, by above-mentioned the 1st conductive- type semiconductor layer 9, and 7 reflections in inboard of the semiconductor layer 4 at the interface between the 2nd conductive layer 33 in conductivity reflector, from the 1st conductive-type semiconductor layer 9, luminescent layer the 3, the 2nd conductive-type semiconductor layer 10 and the 1st conductive layer 31, pass through, from the outside of the above-mentioned surface of emission 8 emissions to light-emitting component.
In the light-emitting component of Figure 21 example, semiconductor layer 4 between substrate surface 5 and the 1st conductive layer 31 farthest, or in the outside 32 of the 1st conductive layer 31, can form and prevent the reflector, in this case, can reduce the reflection of light rate in above-mentioned any face, improve transmissivity, thereby prevent above-mentioned light interreflection in semiconductor layer 4.Therefore, can further improve from luminescent layer 3 send, from the emission effciency of the surface of emission 8 emission to the light of outside.
Prevent that the reflector can be by constituting with above-mentioned Fig. 2 example identical materials equally.For example, preferably allow the refractive index that prevents the reflector, from itself and semiconductor layer 4 contacted towards with 31 contacted of the 1st conductive layers, perhaps from itself and the 1st conductive layer 31 contacted towards with the outside of above-mentioned opposing face, and dull the minimizing.In addition, prevent the thickness in reflector, be preferably formed as the light launched for above-mentioned luminescent layer 3 at above-mentioned 1/4 of the wavelength in the reflector that prevents.
By with the purpose that prevents that the reflector is identical, can semiconductor layer 4 from substrate surface 5 farthest, or prevent the outside in reflector, form a plurality of projections, simultaneously, preferably allow the size of the direction vertical of above-mentioned projection, reduce to the top dullness from the base portion of projection with short transverse.
Projection can constitute equally with the example situation of above-mentioned Fig. 4.For example, that projection can form is coniform, pyramid-shaped or form the curvilinear shape that does not have flex point by the bus that constitutes circular cone or pyramid, or arbitrary shape such as hemispherical.In addition, the size of the direction vertical with short transverse of the base portion of projection be preferably wavelength 1 times below of light in being formed with the layer of above-mentioned projection that luminescent layer 3 is launched, and the height of projection is more than 1 times of above-mentioned wavelength.
In addition, by with the purpose that prevents that the reflector is identical, can semiconductor layer 4 from substrate surface 5 farthest, or prevent from the outside in reflector to form a plurality of recesses, simultaneously, preferably allow the size of the direction vertical of above-mentioned recess, reduce to the bottom dullness from the peristome of recess with depth direction.
Recess can constitute equally with the example situation of above-mentioned Fig. 5.For example, recess can form coniform, pyramid-shaped, or forms the curvilinear shape that does not have flex point by the bus that constitutes circular cone or pyramid, or arbitrary shape such as hemispherical.In addition, the size of the direction vertical with depth direction of the peristome of recess be preferably wavelength 1 times below of light in being formed with the layer of above-mentioned recess that luminescent layer is launched, and concave depth is more than 1 times of above-mentioned wavelength.
Figure 22～Figure 26 is respectively the cutaway view of explanation by the operation of the light-emitting component of manufacture method manufacturing Figure 21 of the present invention.
With reference to Figure 22, in the manufacture method of the present invention, at first, in the surface 2 of substrate 1, the epitaxial growth gallium nitride compound forms the gallium nitride compound semiconductor layer 4 with multi-ply construction.With above-mentioned semiconductor layer 4, the method for epitaxial growth on substrate 1, as previously mentioned.
Next with reference to Figure 23, the semiconductor layer 4 on the surface 2 that is formed on substrate 1, vertical with the lamination direction in substrate surface 5 farthest, after the 1st conductive layer 31 by vacuum vapour deposition or sputtering method formation light transmission conductive layer, in the outside 32 of formed the 1st conductive layer 31, form electrode pad 30 by vacuum vapour deposition or sputtering method.
Next; with reference to Figure 24～Figure 26; after semiconductor layer the 4, the 1st conductive layer 31 and electrode pad 30 covered by protective layer 24; substrate 1 is removed; allow the inboard 7 of semiconductor layer 4 expose; carry out as required on above-mentioned inboard 7, forming the 2nd conductive layer 33 after the etch cleaned processing by vacuum vapour deposition or sputtering method.
Afterwards, in the outside 34 of the 2nd conductive layer 33, engage supporter 29, next, for example remove after the protective layer 24, produce light-emitting component as shown in figure 21 by dry-etching.
Manufacture method by the invention described above; in the operation of removing substrate 1; semiconductor layer the 4, the 1st conductive layer 31 and projected electrode 30 are covered by protective layer 24, therefore, can prevent that these layers for example are used to remove the etching liquid of substrate etc. and pollute, corrode.In addition, can also carry out machinery to above-mentioned each layer by protective layer 24 and strengthen, therefore, can prevent these ply stress distortion.Therefore,, can prevent because of producing the decline of the various bad rate of finished productss that cause such as above-mentioned pollution, burn into distortion by manufacture method of the present invention, thus can high production rate, make light-emitting component efficiently.
Lighting device of the present invention by the light-emitting component with the invention described above, combines with at least one side in fluorophor and the phosphor and constitutes.Above-mentioned fluorophor, phosphor, can use wavelength about 350～400, the blue light launched from the surface of emission of light-emitting component by irradiation separately to ultraviolet region, and send the various fluorophor and/or the phosphor of light arbitrarily, perhaps combine two or more.
The lighting device of the invention described above, as light source, therefore, specific energy consumption is very good with light-emitting component of the present invention, particularly, can realize the above specific energy consumption of twice of fluorescent lamp.
The present invention is not limited in the example of each figure discussed above, in the scope that does not break away from main idea of the present invention, can also carry out various changes.For example, can be at the light-emitting component of Fig. 1 example pass through to remove in the inboard 7 of the semiconductor layer 4 that substrate 1 exposes, or in above-mentioned inboard 7 in formed outside 17 that prevents reflector 16 etc., the transparent supporting body of the light that joint can transmission luminescent layer 3 be sent comes light-emitting component is strengthened.In addition; if before removing protective layer 24, engage above-mentioned supporter; then when removing protective layer 24, can protect semiconductor layer 4 or prevent reflector 16, thereby can prevent that these layers are used to remove that the etching of protective layer 24 etc. is polluted, the burn into stress deformation.
In the conductivity reflector 6 of above-mentioned each figure, reflector the 27, the 1st and the 2nd conductive layer 31,33,, also can for example can allow about 1% transmittance of light that luminescent layer 3 launched as the layer in conductivity reflector.In this case, can monitor the light intensity and the wavelength of institute's transmission, thereby can control luminous intensity etc.

Claims (26)

1. light-emitting component is characterized in that having:
The gallium nitride compound semiconductor layer, it has the multi-ply construction that allows the gallium nitride compound epitaxial growth and form on substrate, and this multi-ply construction comprises luminescent layer; The conductivity reflector, it forms and being connected from substrate surface electrical farthest of above-mentioned gallium nitride compound semiconductor layer, has conductivity and is used for reflecting the light that above-mentioned luminescent layer is launched; And, conductive layer, it is electrically connected with the layer of the contacted inboard of aforesaid substrate with the formation of above-mentioned gallium nitride compound semiconductor layer,
And allow above-mentioned inboard expose by removing aforesaid substrate, as the surface of emission of the light that is used for allowing above-mentioned luminescent layer launch to the external emission of above-mentioned gallium nitride compound semiconductor layer,
Be formed with a plurality of projections in the inboard of above-mentioned semiconductor layer, and the size of above-mentioned projection on the direction vertical, reduce towards the top dullness from the base portion of above-mentioned projection with short transverse,
The size of the base portion of above-mentioned projection on the direction vertical with short transverse, wavelength 1 times below of the light of launching for above-mentioned luminescent layer in being formed with the layer of above-mentioned projection, and the height of above-mentioned projection is more than 1 times of above-mentioned wavelength.
2. light-emitting component is characterized in that having:
The gallium nitride compound semiconductor layer, it has the multi-ply construction that allows the gallium nitride compound epitaxial growth and form on substrate, and this multi-ply construction comprises luminescent layer; The conductivity reflector, it forms and being connected from substrate surface electrical farthest of above-mentioned gallium nitride compound semiconductor layer, has conductivity and is used for reflecting the light that above-mentioned luminescent layer is launched; And, conductive layer, it is electrically connected with the layer of the contacted inboard of aforesaid substrate with the formation of above-mentioned gallium nitride compound semiconductor layer,
And allow above-mentioned inboard expose by removing aforesaid substrate, as the surface of emission of the light that is used for allowing above-mentioned luminescent layer launch to the external emission of above-mentioned gallium nitride compound semiconductor layer,
Be formed with a plurality of recesses in the inboard of above-mentioned semiconductor layer, simultaneously, the size of above-mentioned recess on the direction vertical with depth direction reduces towards the bottom dullness from the peristome of recess,
The size of the peristome of above-mentioned recess on the direction vertical with depth direction, wavelength 1 times below of the light of launching for above-mentioned luminescent layer in being formed with the layer of above-mentioned recess, and above-mentioned concave depth is more than 1 times of above-mentioned wavelength.
3. light-emitting component as claimed in claim 1 or 2 is characterized in that:
On by the inboard of removing the above-mentioned semiconductor layer that aforesaid substrate exposes, be formed with and prevent the reflector.
4. light-emitting component as claimed in claim 3 is characterized in that:
The above-mentioned reflector that prevents, its refractive index from contacted of above-mentioned semiconductor layer, reduce towards the outside dullness of above-mentioned opposing face.
5. light-emitting component as claimed in claim 3 is characterized in that:
The above-mentioned reflector that prevents, its thickness are formed light that above-mentioned luminescent layer launches at above-mentioned 1/4 times of preventing the wavelength in the reflector.
6. light-emitting component as claimed in claim 1 or 2 is characterized in that:
Above-mentioned conductivity reflector is formed by aluminium or silver.
7. light-emitting component as claimed in claim 1 or 2 is characterized in that:
The outside of above-mentioned conductivity reflector and opposing face contacted of semiconductor layer is connected with projected electrode.
8. lighting device is characterized in that having:
Light-emitting component described in the claim 1 or 2; With at least one side in fluorophor or the phosphor, it is undertaken luminous by the illuminated light of being launched by above-mentioned light-emitting component.
9. light-emitting component is characterized in that having:
The gallium nitride compound semiconductor layer, it has the multi-ply construction that allows the gallium nitride compound epitaxial growth and form on substrate, and this multi-ply construction comprises luminescent layer; The light transmission conductive layer, it forms and being connected from substrate surface electrical farthest of above-mentioned gallium nitride compound semiconductor layer, has conductivity and is used for the light that the above-mentioned luminescent layer of transmission launched; And, conductive layer, it is electrically connected with the layer of the contacted inboard of substrate with the formation of above-mentioned gallium nitride compound semiconductor layer,
And, allow above-mentioned inboard expose by removing aforesaid substrate, on the above-mentioned inboard of being exposed, formation is used for reflecting the reflection of light layer that above-mentioned luminescent layer is launched, with above-mentioned light transmission conductive layer as with the outside of the opposing face of contacted of above-mentioned gallium nitride compound semiconductor layer, as the surface of emission of the light that is used for allowing above-mentioned luminescent layer launch to the external emission of semiconductor layer
Above-mentioned gallium nitride compound semiconductor layer from substrate surface farthest, or the above-mentioned outside that prevents the reflector is formed with a plurality of projections, simultaneously, the size of above-mentioned projection on the direction vertical with short transverse reduces towards the top dullness from the base portion of above-mentioned projection
The size of the base portion of above-mentioned projection on the direction vertical with short transverse, wavelength 1 times below of the light of launching for above-mentioned luminescent layer in being formed with the layer of above-mentioned projection, and the height of above-mentioned projection is more than 1 times of above-mentioned wavelength.
10. light-emitting component is characterized in that having:
The gallium nitride compound semiconductor layer, it has the multi-ply construction that allows the gallium nitride compound epitaxial growth and form on substrate, and this multi-ply construction comprises luminescent layer; The light transmission conductive layer, it forms and being connected from substrate surface electrical farthest of above-mentioned gallium nitride compound semiconductor layer, has conductivity and is used for the light that the above-mentioned luminescent layer of transmission launched; And, conductive layer, it is electrically connected with the layer of the contacted inboard of substrate with the formation of above-mentioned gallium nitride compound semiconductor layer,
And, allow above-mentioned inboard expose by removing aforesaid substrate, on the above-mentioned inboard of being exposed, formation is used for reflecting the reflection of light layer that above-mentioned luminescent layer is launched, with above-mentioned light transmission conductive layer as with the outside of the opposing face of contacted of above-mentioned gallium nitride compound semiconductor layer, as the surface of emission of the light that is used for allowing above-mentioned luminescent layer launch to the external emission of semiconductor layer
Above-mentioned gallium nitride compound semiconductor layer from substrate surface farthest, or the above-mentioned outside that prevents the reflector is formed with a plurality of recesses, simultaneously, the size of above-mentioned recess on the direction vertical with depth direction reduces towards the bottom dullness from the peristome of above-mentioned recess
The size of the peristome of above-mentioned recess on the direction vertical with depth direction, wavelength 1 times below of the light of launching for luminescent layer in being formed with the layer of above-mentioned recess, and above-mentioned concave depth is more than 1 times of above-mentioned wavelength.
11. light-emitting component as claimed in claim 10 is characterized in that:
Above-mentioned reflector is formed by titanium, aluminium or silver.
12. light-emitting component as claimed in claim 11 is characterized in that:
The outside in above-mentioned reflector engages supporter.
13. light-emitting component as claimed in claim 12 is characterized in that:
Above-mentioned supporter is formed by silicon.
14., it is characterized in that as claim 9 or 10 described light-emitting components:
Above-mentioned light transmission conductive layer forms the flat shape with perforation, the semiconductor layer that will in the part of above-mentioned perforation, be exposed from substrate surface farthest, as the surface of emission of the light emission that is used for allowing above-mentioned luminescent layer launch to the outside of semiconductor layer.
15. a lighting device is characterized in that having:
Light-emitting component described in the claim 9 or 10; With at least one side in fluorophor or the phosphor, it is undertaken luminous by the illuminated light of being launched by above-mentioned light-emitting component.
16. a light-emitting component is characterized in that having:
The gallium nitride compound semiconductor layer, it has the multi-ply construction that allows the gallium nitride compound epitaxial growth and form on substrate, and this multi-ply construction comprises luminescent layer; The 1st conductive layer, it forms and being connected from substrate surface electrical farthest of above-mentioned gallium nitride compound semiconductor layer; And, the 2nd conductive layer, it allows the inboard of above-mentioned gallium nitride compound semiconductor layer expose by removing aforesaid substrate, forms the state that is electrically connected with the above-mentioned inboard of being exposed,
And the side in the above-mentioned the 1st and the 2nd conductive layer has conductivity, and is the conductivity reflector that is used for reflecting the light that above-mentioned luminescent layer launches, and the opposing party has conductivity, and is to be used for the light transmission conductive layer of the light that the above-mentioned luminescent layer of transmission launched; Simultaneously, with outside above-mentioned light transmission conductive layer and opposing face contacted of above-mentioned gallium nitride compound semiconductor layer, as the surface of emission of the light that is used for allowing above-mentioned luminescent layer launch to the external emission of above-mentioned gallium nitride compound semiconductor layer,
On the face that is formed with the light transmission conductive layer of above-mentioned gallium nitride compound semiconductor layer, be formed with a plurality of projections, simultaneously, the size of above-mentioned projection on the direction vertical with short transverse reduces towards the top dullness from the base portion of above-mentioned projection,
The size of the base portion of above-mentioned projection on the direction vertical with short transverse, wavelength 1 times below of the light of launching for above-mentioned luminescent layer in being formed with the layer of above-mentioned projection, and the height of projection is more than 1 times of above-mentioned wavelength.
17. a light-emitting component is characterized in that having:
The gallium nitride compound semiconductor layer, it has the multi-ply construction that allows the gallium nitride compound epitaxial growth and form on substrate, and this multi-ply construction comprises luminescent layer; The 1st conductive layer, it forms and being connected from substrate surface electrical farthest of above-mentioned gallium nitride compound semiconductor layer; And, the 2nd conductive layer, it allows the inboard of above-mentioned gallium nitride compound semiconductor layer expose by removing aforesaid substrate, forms the state that is electrically connected with the above-mentioned inboard of being exposed,
And the side in the above-mentioned the 1st and the 2nd conductive layer has conductivity, and is the conductivity reflector that is used for reflecting the light that above-mentioned luminescent layer launches, and the opposing party has conductivity, and is to be used for the light transmission conductive layer of the light that the above-mentioned luminescent layer of transmission launched; Simultaneously, with outside above-mentioned light transmission conductive layer and opposing face contacted of above-mentioned gallium nitride compound semiconductor layer, as the surface of emission of the light that is used for allowing above-mentioned luminescent layer launch to the external emission of above-mentioned gallium nitride compound semiconductor layer,
On the face that is formed with the light transmission conductive layer of above-mentioned gallium nitride compound semiconductor layer, be formed with a plurality of recesses, simultaneously, the size of above-mentioned recess on the direction vertical with depth direction reduces towards the bottom dullness from the peristome of above-mentioned recess,
The size of the peristome of above-mentioned recess on the direction vertical with depth direction, wavelength 1 times below of the light of launching for above-mentioned luminescent layer in being formed with the layer of above-mentioned recess, and above-mentioned concave depth is more than 1 times of above-mentioned wavelength.
18., it is characterized in that as claim 16 or 17 described light-emitting components:
Above-mentioned conductivity reflector is formed by aluminium or silver.
19., it is characterized in that as claim 16 or 17 described light-emitting components:
The outside in above-mentioned reflector engages supporter.
20., it is characterized in that as claim 16 or 17 described light-emitting components:
Above-mentioned supporter is formed by silicon.
21., it is characterized in that as claim 16 or 17 described light-emitting components:
Above-mentioned light transmission conductive layer forms the flat shape with perforation, and the face of the above-mentioned semiconductor layer that will be exposed in the part of above-mentioned perforation is as the surface of emission of the light emission that is used for allowing above-mentioned luminescent layer launch to the outside of above-mentioned semiconductor layer.
22. a lighting device is characterized in that having:
Light-emitting component described in the claim 16 or 17; With at least one side in fluorophor or the phosphor, it is undertaken luminous by the illuminated light of being launched by above-mentioned light-emitting component.
23. a light-emitting component is characterized in that having:
The gallium nitride compound semiconductor layer, it has the multi-ply construction that allows the gallium nitride compound epitaxial growth and form on substrate, and this multi-ply construction comprises luminescent layer; The conductivity reflector, it forms and being connected from substrate surface electrical farthest of above-mentioned gallium nitride compound semiconductor layer, has conductivity and is used for reflecting the light that above-mentioned luminescent layer is launched; And, conductive layer, it is electrically connected with the layer of the contacted inboard of aforesaid substrate with the formation of above-mentioned gallium nitride compound semiconductor layer, and allow above-mentioned inboard expose by removing aforesaid substrate, as the surface of emission of the light that is used for allowing above-mentioned luminescent layer launch to the external emission of above-mentioned gallium nitride compound semiconductor layer
On by the inboard of removing the above-mentioned semiconductor layer that aforesaid substrate exposes, be formed with and prevent the reflector,
In the outside that prevents the reflector, be formed with a plurality of projections, and the size of above-mentioned projection on the direction vertical with short transverse, reduce towards the top dullness from the base portion of above-mentioned projection,
The size of the base portion of above-mentioned projection on the direction vertical with short transverse, wavelength 1 times below of the light of launching for above-mentioned luminescent layer in being formed with the layer of above-mentioned projection, and the height of above-mentioned projection is more than 1 times of above-mentioned wavelength.
24. a light-emitting component is characterized in that having:
The gallium nitride compound semiconductor layer, it has the multi-ply construction that allows the gallium nitride compound epitaxial growth and form on substrate, and this multi-ply construction comprises luminescent layer; The conductivity reflector, it forms and being connected from substrate surface electrical farthest of above-mentioned gallium nitride compound semiconductor layer, has conductivity and is used for reflecting the light that above-mentioned luminescent layer is launched; And, conductive layer, it is electrically connected with the layer of the contacted inboard of aforesaid substrate with the formation of above-mentioned gallium nitride compound semiconductor layer, and allow above-mentioned inboard expose by removing aforesaid substrate, as the surface of emission of the light that is used for allowing above-mentioned luminescent layer launch to the external emission of above-mentioned gallium nitride compound semiconductor layer
On by the inboard of removing the above-mentioned semiconductor layer that aforesaid substrate exposes, be formed with and prevent the reflector,
In the outside that prevents the reflector, be formed with a plurality of recesses, simultaneously, the size of above-mentioned recess on the direction vertical with depth direction reduces towards the bottom dullness from the peristome of recess,
The size of the peristome of above-mentioned recess on the direction vertical with depth direction, wavelength 1 times below of the light of launching for above-mentioned luminescent layer in being formed with the layer of above-mentioned recess, and above-mentioned concave depth is more than 1 times of above-mentioned wavelength.
25. a light-emitting component is characterized in that having:
The gallium nitride compound semiconductor layer, it has the multi-ply construction that allows the gallium nitride compound epitaxial growth and form on substrate, and this multi-ply construction comprises luminescent layer; The 1st conductive layer, it forms and being connected from substrate surface electrical farthest of above-mentioned gallium nitride compound semiconductor layer; And, the 2nd conductive layer, it allows the inboard of above-mentioned gallium nitride compound semiconductor layer expose by removing aforesaid substrate, form the state that is electrically connected with the above-mentioned inboard of being exposed, and, the side in the above-mentioned the 1st and the 2nd conductive layer, has conductivity, and be the conductivity reflector that is used for reflecting the light that above-mentioned luminescent layer launches, the opposing party has conductivity, and is to be used for the light transmission conductive layer of the light that the above-mentioned luminescent layer of transmission launched; Simultaneously, with outside above-mentioned light transmission conductive layer and opposing face contacted of above-mentioned gallium nitride compound semiconductor layer, as the surface of emission of the light that is used for allowing above-mentioned luminescent layer launch to the external emission of above-mentioned gallium nitride compound semiconductor layer,
Between the face that is formed with the light transmission conductive layer and above-mentioned light transmission conductive layer of above-mentioned semiconductor layer, or the outside of above-mentioned light transmission conductive layer, be formed with and prevent the reflector,
On the above-mentioned outside that prevents the reflector, be formed with a plurality of projections, simultaneously, the size of above-mentioned projection on the direction vertical with short transverse reduces towards the top dullness from the base portion of above-mentioned projection,
The size of the base portion of above-mentioned projection on the direction vertical with short transverse, wavelength 1 times below of the light of launching for above-mentioned luminescent layer in being formed with the layer of above-mentioned projection, and the height of projection is more than 1 times of above-mentioned wavelength.
26. a light-emitting component is characterized in that having:
The gallium nitride compound semiconductor layer, it has the multi-ply construction that allows the gallium nitride compound epitaxial growth and form on substrate, and this multi-ply construction comprises luminescent layer; The 1st conductive layer, it forms and being connected from substrate surface electrical farthest of above-mentioned gallium nitride compound semiconductor layer; And, the 2nd conductive layer, it allows the inboard of above-mentioned gallium nitride compound semiconductor layer expose by removing aforesaid substrate, form the state that is electrically connected with the above-mentioned inboard of being exposed, and, the side in the above-mentioned the 1st and the 2nd conductive layer, has conductivity, and be the conductivity reflector that is used for reflecting the light that above-mentioned luminescent layer launches, the opposing party has conductivity, and is to be used for the light transmission conductive layer of the light that the above-mentioned luminescent layer of transmission launched; Simultaneously, with outside above-mentioned light transmission conductive layer and opposing face contacted of above-mentioned gallium nitride compound semiconductor layer, as the surface of emission of the light that is used for allowing above-mentioned luminescent layer launch to the external emission of above-mentioned gallium nitride compound semiconductor layer,
Between the face that is formed with the light transmission conductive layer and above-mentioned light transmission conductive layer of above-mentioned semiconductor layer, or the outside of above-mentioned light transmission conductive layer, be formed with and prevent the reflector,
On the above-mentioned outside that prevents the reflector, be formed with a plurality of recesses, simultaneously, the size of above-mentioned recess on the direction vertical with depth direction reduces towards the bottom dullness from the peristome of above-mentioned recess,
The size of the peristome of above-mentioned recess on the direction vertical with depth direction, wavelength 1 times below of the light of launching for above-mentioned luminescent layer in being formed with the layer of above-mentioned recess, and above-mentioned concave depth is more than 1 times of above-mentioned wavelength.
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