CN106784183B - A kind of LED chip and preparation method thereof - Google Patents
A kind of LED chip and preparation method thereof Download PDFInfo
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- CN106784183B CN106784183B CN201611180404.9A CN201611180404A CN106784183B CN 106784183 B CN106784183 B CN 106784183B CN 201611180404 A CN201611180404 A CN 201611180404A CN 106784183 B CN106784183 B CN 106784183B
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- tio
- nanometer rods
- current extending
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Abstract
The invention discloses a kind of LED chips and preparation method thereof, belong to technical field of semiconductors.The LED chip includes substrate and stacks gradually undoped AlN buffer layer, layer of undoped gan, N-type GaN layer, multiple quantum well layer, p-type Al on substrateyGa1‑yN layers, p-type GaN layer, ITO current extending, 0.1 < y < 0.5, multiple quantum well layer includes alternately stacked InGaN layer and GaN layer, ITO current extending is equipped with the groove for extending to N-type GaN layer, N-type electrode is arranged in N-type GaN layer, P-type electrode is arranged on ITO current extending, several TiO2Nanometer rods are arranged on ITO current extending with array manner.TiO of the present invention2ITO current extending can be directly used as seed layer in the formation of nanometer rods, and seed layer is tightly combined, it is not easy to be destroyed, can significantly improve the luminous efficiency of LED.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of LED chip and preparation method thereof.
Background technique
With the development of semiconductor technology, light emitting diode (it is English: Light Emitting Diode, referred to as: LED)
Luminous efficiency is continuously improved, various colorful display screens, ornament lamp, indicator light, in terms of obtained it is extensive
Using, but ideal target has not been reached yet in the luminous efficiency of LED.
The luminous efficiency of LED by internal quantum efficiency and light extraction efficiency two in terms of determine, existing blue light GaN base LED's is interior
Quantum efficiency is very high, mainly improves the light extraction efficiency of LED.At present using the precipitation method on the current extending of LED
Layer of ZnO seed layer is made, then uses Hydrothermal Growth ZnO nano-rod array, to improve the luminous efficiency of LED.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
The ZnO seed combination of precipitation method production is not close, and structure is more easily damaged, the improvement effect of LED luminous efficiency compared with
Difference.
Summary of the invention
In order to solve problems in the prior art, the embodiment of the invention provides a kind of LED chips and preparation method thereof.It is described
Technical solution is as follows:
On the one hand, the embodiment of the invention provides a kind of LED chip, the LED chip includes substrate and stacks gradually
Undoped AlN buffer layer, layer of undoped gan, N-type GaN layer, multiple quantum well layer, p-type Al over the substrateyGa1-yN layers, P
Type GaN layer, ITO current extending, 0.1 < y < 0.5, the multiple quantum well layer include alternately stacked InGaN layer and GaN layer,
The ITO current extending is equipped with the groove for extending to the N-type GaN layer, and N-type electrode is arranged in the N-type GaN layer, P
Type electrode is arranged on the ITO current extending, and the LED chip further includes several TiO2Nanometer rods, several TiO2It receives
Rice stick is arranged on the ITO current extending with array manner.
Optionally, the TiO2The diameter of nanometer rods is 20~80nm.
Optionally, the TiO2The height of nanometer rods is 300~500nm.
Optionally, the TiO2Nanometer rods are grown along (101) crystal orientation.
On the other hand, the embodiment of the invention provides a kind of production method of LED chip, the production method includes:
Using Metal Organic Chemical Vapor Deposition technology on substrate successively epitaxial growth undoped with AlN buffer
Layer, layer of undoped gan, N-type GaN layer, multiple quantum well layer, p-type AlyGa1-yN layers, p-type GaN layer, 0.1 < y < 0.5 are described more
Quantum well layer includes alternately stacked InGaN layer and GaN layer；
ITO current extending is formed in the p-type GaN layer using evaporation coating technique；
It is opened up on the ITO current extending using photoetching technique and lithographic technique and extends to the recessed of the N-type GaN layer
Slot；
N-type electrode is set in the N-type GaN layer, P-type electrode is set on the ITO current extending；
Photoresist is formed in the groove and in the N-type electrode and the P-type electrode using photoetching technique；
Several TiO are grown on the ITO current extending and the photoresist using hydro-thermal method2Nanometer rods, if described
Dry TiO2Nanometer rods are arranged with array manner；
Using going glue to remove the TiO on the photoresist and the photoresist2Nanometer rods；
Sliver obtains several mutually independent LED chips.
Specifically, described that several TiO are grown on the ITO current extending and the photoresist using hydro-thermal method2It receives
Rice stick, comprising:
The substrate is placed in the mixed solution being made of in hydrothermal reaction kettle butyl titanate and hydrochloric acid and is carried out instead
It answers, forms several TiO on the ITO current extending and the photoresist2Nanometer rods；
The temperature of environment where the temperature of the mixed solution is restored to the hydrothermal reaction kettle after the reaction was completed；
The substrate is taken out from the hydrothermal reaction kettle, is rinsed using deionized water, and is used and be dried with nitrogen.
Optionally, the concentration of titanium is 0.02~0.2mol/L in the mixed solution, the pH value of the mixed solution is 6~
8。
Preferably, the temperature of reaction is 100~200 DEG C, and the time of reaction is 1~10 hour.
Optionally, the TiO2The diameter of nanometer rods is 20~80nm.
Optionally, the TiO2The height of nanometer rods is 300~500nm.
Technical solution provided in an embodiment of the present invention has the benefit that
By the way that several TiO are arranged with array manner on ITO current extending2Nanometer rods, TiO2Green non-poisonous, catalysis is lived
Property it is high, chemical stability is good, low in cost, TiO2Nanometer rods and ZnO nanorod have similar photoelectric properties, utilize its uniqueness
Geometry reduce the absorption of light, while TiO2ITO current extending can be directly used as seed in the formation of nanometer rods
Layer, seed layer are tightly combined, it is not easy to are destroyed, can be significantly improved the luminous efficiency of LED.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram for LED chip that the embodiment of the present invention one provides；
Fig. 2 is a kind of flow diagram of the production method of LED chip provided by Embodiment 2 of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
Embodiment one
The embodiment of the invention provides a kind of LED chips, and referring to Fig. 1, which includes substrate 1 and stack gradually
Undoped AlN buffer layer 2, layer of undoped gan 3, N-type GaN layer 4, multiple quantum well layer 5, p-type Al on substrate 1yGa1-yN layers
6, p-type GaN layer 7,8,0.1 < y < 0.5 of tin indium oxide (English: Indium tin oxide, abbreviation: ITO) current extending.
Multiple quantum well layer includes alternately stacked InGaN layer and GaN layer.ITO current extending 8 is equipped with and extends to N-type GaN layer 4
Groove, N-type electrode 9 are arranged in N-type GaN layer 4, and P-type electrode 10 is arranged on ITO current extending 8.
In the present embodiment, which further includes several TiO2Nanometer rods 11, several TiO2Nanometer rods 11 are with array side
Formula is arranged on ITO current extending 8.
Optionally, TiO2The diameter of nanometer rods can be 20~80nm.
Optionally, TiO2The height of nanometer rods can be 300~500nm.
Optionally, TiO2Nanometer rods are grown along (101) crystal orientation.
Optionally, substrate can be the GaAs substrate suitable for red yellow light LED, or suitable for blue green light LED
Sapphire Substrate, SiC substrate or GaN substrate.
The embodiment of the present invention is by being arranged several TiO on ITO current extending with array manner2Nanometer rods, TiO2Green
It is nontoxic, catalytic activity is high, chemical stability is good, low in cost, TiO2Nanometer rods and ZnO nanorod have similar photo electric
Can, the absorption of light, while TiO are reduced using its unique geometry2The expansion of ITO electric current can be directly used in the formation of nanometer rods
Layer is opened up as seed layer, seed layer is tightly combined, it is not easy to is destroyed, can be significantly improved the luminous efficiency of LED.
Embodiment two
The embodiment of the invention provides a kind of production methods of LED chip, suitable for making the LED core of the offer of embodiment one
Piece, referring to fig. 2, which includes:
Step 201: using Metal Organic Chemical Vapor Deposition (English: metal organic chemical
Vapour deposition, referred to as: MOCVD) technology on substrate successively epitaxial growth undoped with AlN buffer layer, undoped
GaN layer, N-type GaN layer, multiple quantum well layer, AlyGa1-yN layers of p-type, p-type GaN layer, 0.1 < y < 0.5, multiple quantum well layer include
Alternately stacked InGaN layer and GaN layer.
Optionally, substrate can be the GaAs substrate suitable for red yellow light LED, or suitable for blue green light LED
Sapphire Substrate, SiC substrate or GaN substrate.
Step 202: ITO current extending is formed in p-type GaN layer using evaporation coating technique.
Step 203: being opened up on ITO current extending using photoetching technique and lithographic technique and extend to the recessed of N-type GaN layer
Slot.
Specifically, which may include:
A layer photoresist is coated on ITO current extending；
Using photoetching technique part photoresist；
Under the protection of photoresist, using inductively coupled plasma body (English: Inductive Coupled Plasma,
Referred to as: ICP) lithographic technique opens up the groove for extending to N-type GaN layer on ITO current extending；
Remove photoresist.
Step 204: N-type electrode being set in N-type GaN layer, P-type electrode is set on ITO current extending.
Step 205: photoresist is formed in groove and in N-type electrode and P-type electrode using photoetching technique.
Step 206: several TiO are grown on ITO current extending and photoresist using hydro-thermal method2Nanometer rods, several TiO2
Nanometer rods are arranged with array manner.
Specifically, which may include:
Substrate is placed in the mixed solution being made of in hydrothermal reaction kettle butyl titanate and hydrochloric acid and is reacted,
Several TiO are formed on ITO current extending and photoresist2Nanometer rods；
The temperature of mixed solution is restored to the temperature of environment where hydrothermal reaction kettle after the reaction was completed；
Substrate is taken out from hydrothermal reaction kettle, is rinsed using deionized water, and is used and be dried with nitrogen.
Optionally, the concentration of titanium can be 0.02~0.2mol/L in mixed solution, the pH value of mixed solution can for 6~
8。
Preferably, the temperature of reaction can be 100~200 DEG C, and temperature is lower, will not influence the structure and electrical property of LED
Energy；The time of reaction can be 1~10 hour.
Optionally, TiO2The diameter of nanometer rods can be 20~80nm.
Optionally, TiO2The height of nanometer rods can be 300~500nm.
Optionally, TiO2Nanometer rods are grown along (101) crystal orientation.
It should be noted that by changing the concentration of titanium in the mixed solution, pH value of mixed solution, the temperature of reaction, anti-
The time answered, adjustable TiO2Diameter, the TiO of nanometer rods2The height of nanometer rods, TiO2The direction of growth of nanometer rods, TiO2It receives
The density of rice stick, TiO2The surface roughness of nanometer rods, to make TiO2The array surface product of nanometer rods reaches maximum, light extraction
Efficiency reaches highest, i.e., utmostly improves luminous efficiency.
Step 207: using the TiO gone on glue removal photoresist and photoresist2Nanometer rods.
Optionally, which can also include:
It is rinsed using deionized water, and uses and be dried with nitrogen.
Step 208: sliver obtains several mutually independent LED chips.
The embodiment of the present invention is by being arranged several TiO on ITO current extending with array manner2Nanometer rods, TiO2Green
It is nontoxic, catalytic activity is high, chemical stability is good, low in cost, TiO2Nanometer rods and ZnO nanorod have similar photo electric
Can, the absorption of light, while TiO are reduced using its unique geometry2The expansion of ITO electric current can be directly used in the formation of nanometer rods
Layer is opened up as seed layer, seed layer is tightly combined, it is not easy to is destroyed, can be significantly improved the luminous efficiency of LED.And TiO2
In the forming process of nanometer rods, photoresist overlay on the electrode, can form good protection to electrode, can be electric to avoid influencing
Learn performance.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (3)
1. a kind of production method of LED chip, which is characterized in that the production method includes:
Using Metal Organic Chemical Vapor Deposition technology on substrate successively epitaxial growth undoped with AlN buffer layer, not
Doped gan layer, N-type GaN layer, multiple quantum well layer, p-type AlyGa1-yN layers, p-type GaN layer, 0.1 < y < 0.5, the multiple quantum wells
Layer includes alternately stacked InGaN layer and GaN layer；
ITO current extending is formed in the p-type GaN layer using evaporation coating technique；
The groove for extending to the N-type GaN layer is opened up on the ITO current extending using photoetching technique and lithographic technique；
N-type electrode is set in the N-type GaN layer, P-type electrode is set on the ITO current extending；
Photoresist is formed in the groove and in the N-type electrode and the P-type electrode using photoetching technique；
Several TiO are grown on the ITO current extending and the photoresist using hydro-thermal method2Nanometer rods, several TiO2
Nanometer rods are arranged with array manner, and the ITO current extending is several TiO2The seed layer of nanometer rods；
Using going glue to remove the TiO on the photoresist and the photoresist2Nanometer rods；
Sliver obtains several mutually independent LED chips；
It is described that several TiO are grown on the ITO current extending and the photoresist using hydro-thermal method2Nanometer rods, comprising:
The substrate is placed in the mixed solution being made of in hydrothermal reaction kettle butyl titanate and hydrochloric acid and is reacted,
Several TiO are formed on the ITO current extending and the photoresist2Nanometer rods；The concentration of titanium in the mixed solution
For 0.02~0.2mol/L, the pH value of the mixed solution is 6~8；The temperature of reaction is 100~200 DEG C, and the time of reaction is
1~10 hour
The temperature of environment where the temperature of the mixed solution is restored to the hydrothermal reaction kettle after the reaction was completed；
The substrate is taken out from the hydrothermal reaction kettle, is rinsed using deionized water, and is used and be dried with nitrogen.
2. manufacturing method according to claim 1, which is characterized in that the TiO2The diameter of nanometer rods is 20~80nm.
3. production method according to claim 1 or 2, which is characterized in that the TiO2The height of nanometer rods be 300~
500nm。
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| CN107799631B (en) * | 2017-09-12 | 2019-06-25 | 合肥惠科金扬科技有限公司 | High-brightness LED preparation process |
| CN108346727A (en) * | 2017-12-26 | 2018-07-31 | 华灿光电(苏州）有限公司 | Light-emitting diode chip for backlight unit and preparation method thereof |
| CN108198914B (en) * | 2017-12-29 | 2019-08-02 | 青岛科技大学 | A kind of inserted TiO2The method of nanometer rods cluster periodic array raising LED luminous efficiency |
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| US20100148199A1 (en) * | 2008-11-04 | 2010-06-17 | Samsung Led Co., Ltd. | Light emitting device with fine pattern |
| KR101007113B1 (en) * | 2008-11-25 | 2011-01-10 | 엘지이노텍 주식회사 | Semiconductor light emitting device and fabrication method thereof |
| CN102214738B (en) * | 2011-04-28 | 2012-10-17 | 山东大学 | Method for preparing TiO2 (titanium dioxide) nano-pillar array on surface of LED (light-emitting diode) epitaxial wafer |
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