CN105702820A - Reversed-polarity AlGaInP-based LED coated with ITO on surface and manufacturing method thereof - Google Patents

Reversed-polarity AlGaInP-based LED coated with ITO on surface and manufacturing method thereof Download PDF

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Publication number
CN105702820A
CN105702820A CN201610216232.XA CN201610216232A CN105702820A CN 105702820 A CN105702820 A CN 105702820A CN 201610216232 A CN201610216232 A CN 201610216232A CN 105702820 A CN105702820 A CN 105702820A
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layer
ito
ohmic contact
algainp
current extending
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CN105702820B (en
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徐洲
杨凯
赵宇
林鸿亮
徐培强
何胜
李波
张永
张双翔
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Yangzhou Changelight Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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Abstract

The invention provides a reversed-polarity AlGaInP-based LED coated with ITO on the surface and a manufacturing method thereof, belonging to the technical field of semiconductors. Since an ITO extended current extension layer is used to replace an n-type AlGaInP current extension layer, the current extension uniformity of an LED chip can be improved, the problem of light absorption of the n-type AlGaInP current extension layer can be avoided and therefore the light emitting efficiency is increased. Thus, both the service life and the photoelectric conversion efficiency of the reversed-polarity AlGaInP-based LED can be enhanced. The reversed-polarity AlGaInP-based LED coated with ITO on the surface and the manufacturing method thereof provided by the invention have the advantages of simple process and great convenience in production operation.

Description

Surface covers reversed polarity AlGaInP base LED and the manufacture method thereof of ITO
Technical field
The present invention relates to a kind of surface and cover reversed polarity AlGaInP base LED and the manufacture method thereof of ITO current extending, belong to technical field of semiconductors。
Background technology
The AlGaInP sill mated with GaAs substrate lattice is a kind of direct band-gap semicondictor, and by adjusting the ratio of Al and Ga, energy gap can change between 1.9eV to 2.3eV。The wave-length coverage of AlGaInP base LED can cover 550nm～650nm, has a wide range of applications in fields such as RGB three primary colours display screen, traffic light, automobile lamps。
Conventional AlGaInP base LED is that p face goes out light, and its epitaxial layer structure is generally: give birth to GaAs cushion, DBR mirror layer, n-type limiting layer, MQW multiple quantum well active layer, p-type limiting layer, p-type GaP Window layer on gaas substrates successively。Due to GaAs substrate extinction, it is necessary to utilize DBR mirror layer to go back the luminous reflectance of directive substrate to reduce substrate extinction problem。
Reversed polarity AlGaInP base LED is that n face goes out light, and its epitaxial layer structure is generally: give birth to GaAs cushion, etch stop layers, n-type roughened layer, n-type current extending, n-type limiting layer, MQW multiple quantum well active layer, p-type limiting layer, p-type GaP Window layer on gaas substrates successively。By being bonded in permanent substrate by epitaxial layer, then remove the GaAs temporary substrates of extinction, GaAs cushion and etch stop layers, it is achieved n face goes out light。Between bonded layer and epitaxial layer, make ODR reflecting mirror, and n-type roughened layer is carried out surface coarsening, it is possible to light extraction efficiency is improved 2-5 times。Current high brightness AlGaInP base LED is mainly reverse polarity configuration。
But, for wavelength partially short reversed polarity AlGaInP the base LED, the particularly wavelength AlGaInP base LED less than 590nm, owing to emission wavelength is close to the absorption band edge of AlGaInP material, the problem that extinction occurs in its n-type AlGaInP current extending。The electrical conductivity showing n-type AlGaInP current extending is more high, current expansion is more good, and extinction is more serious。
Application number be the Patent Application Publication " propose a kind of Window layer and be coated with the reversed polarity AlGaInP light emitting diode construction of tin indium oxide " of 201410102782.X for the wavelength reversed polarity AlGaInP base LED less than 590nm, there is certain drawback in this structure。On the one hand, when requiring n face Window layer band gap width sufficiently wide, epitaxial growth difficulty can be caused；On the other hand, the Window layer that tin indium oxide runs through perforate with cylinder form directly contacts with n-type semiconductor layer, it is desirable to the perforate degree of depth of Window layer is equal to the thickness of Window layer, and this is more difficult control in chip processing procedure。Perforate is excessively deep, can damage MQW active layer, causes luminous efficiency to reduce and electric leakage, even dead lamp；Perforate is excessively shallow, and Window layer will affect the electrical contact between tin indium oxide and n-type semiconductor layer。
Summary of the invention
For the reversed polarity AlGaInP base LED that above-mentioned wavelength is the partially short problem run into, the present invention proposes a kind of surface and covers the reversed polarity AlGaInP base LED of ITO current extending。
The present invention is disposed with metal bonding layer, ODR reflecting mirror, epitaxial layer, ITO extension current extending and main electrode in the permanent substrate have back electrode；Described ODR reflecting mirror is made up of interconnective metallic reflector and media coating, and media coating is connected with epitaxial layer；Metallic reflector is connected with metal bonding layer；Ohmic contact point it is provided with between ITO current extending and epitaxial layer；ITO current extending surface is alligatoring shape。
The method have the benefit that owing to adopting ITO to extend current extending replacement n-type AlGaInP current extending, both can improve the current expansion uniformity of LED chip, the problem eliminating again n-type AlGaInP current extending extinction, improve light extraction efficiency。Therefore, it can extend the life-span of reversed polarity AlGaInP base LED, improve its photoelectric transformation efficiency。
Further, ITO current extending surface coarsening shape pattern character size is 5nm～200nm, and this surface coarsening processes and the purpose of design of alligatoring shape pattern character size is to reduce the total reflection of light, improves light extraction efficiency as much as possible。
Described epitaxial layer includes: p-GaP Window layer, p-AlGaInP limiting layer, MQW multiple quantum well active layer, n-AlGaInP limiting layer, n-GaAs ohmic contact layer。Compared with conventional reversed polarity AlGaInP base LED epitaxial structure, between n-AlGaInP limiting layer, n-GaAs ohmic contact layer, decrease n-AlGaInP current extending and n-type roughened layer。
Media coating in ODR reflecting mirror of the present invention is SiO2、Si3N4、MgF2, in ITO at least any one, the metallic reflector in ODR reflecting mirror be in Ag, Al, Au, AuZn alloy, AuBe alloy at least any one。
The starting point of this design is that the ODR reflecting mirror in order to obtain high reflectance, described media coating and metallic reflector can carry out different combinations。
The present invention another object is that the manufacture method proposing the reversed polarity AlGaInP base LED chip that a kind of surface covers ITO。
The present invention comprises the following steps:
1) on temporary substrates successively epitaxial growth buffer, etch stop layers, n-GaAs ohmic contact layer, n-AlGaInP limiting layer, MQW multiple quantum well active layer, p-AlGaInP limiting layer, p-GaP Window layer, formed epitaxial wafer；
2) in the p-GaP Window layer of epitaxial wafer, ODR reflecting mirror and metal bonding layer are made successively；
3) metal bonding layer is made in permanent substrate front；
4) by the metal bonding layer on epitaxial wafer and the metal bonding layer in permanent substrate, on wafer bonding to permanent substrate, the crude product of bonding will be formed；
5) remove the temporary substrates on the crude product being bonded, cushion and etch stop layers, expose n-GaAs ohmic contact layer；
6) photoetching, evaporation metal, Lift-off produce Ohmic contact point；
7) etch n-GaAs Ohmic contact layer pattern, only retain the n-GaAs ohmic contact layer below Ohmic contact point；
8) at n-AlGaInP limiting layer and Ohmic contact one layer of ITO current extending of some disposed thereon, and roughening treatment is done on ITO current extending surface；
9) carry out photoetching on ITO current extending surface, evaporation metal, Lift-off complete main electrode and make；
10) carrying out photoetching on ITO current extending surface, surface, luminous zone forms photoresist protective layer, only exposes Cutting Road, then etches away the ITO current extending of Cutting Road with ITO etching solution, then etch Cutting Road, and etch depth reaches p-GaP Window layer；
11) back electrode is made at the permanent substrate back side；
12) cutting, sliver, obtain LED chip。
Involved in the present invention is common process, has the advantage that technique is simple, facilitate production operation。
In described step 8), ITO current extending surface coarsening shape pattern character size is 5nm～200nm。The surface topography of its alligatoring shape can pass through to regulate ito thin film deposition process parameters and obtain, or obtained by such as the wet etchings such as concentrated sulphuric acid, or adopts dry etching to obtain。
Accompanying drawing explanation
Fig. 1 is the structural representation having made ODR reflecting mirror and metal bonding layer in manufacturing process on epitaxial wafer surface。
Fig. 2 is the structural representation after having made metal bonding layer in manufacturing process in permanent substrate。
Fig. 3 is the reversed polarity AlGaInP base LED chip cross-sectional view that surface of the present invention covers ITO。
Fig. 4 is the top view of Fig. 3。
Fig. 5 is ITO current extending surface typical case's pattern of the alligatoring shape of the present invention of scanning electron microscope shooting。
Detailed description of the invention
One, being the preferred embodiment of the present invention structural representation in manufacturing process as illustrated in fig. 1 and 2, manufacturing step is as follows:
1, as shown in Figure 1, adopting MOCVD device at GaAs temporary substrates 101 growing epitaxial layers, epitaxial layer includes GaAs cushion 102, GaInP cutoff layer 103, n-GaAs ohmic contact layer 104, n-AlGaInP limiting layer 105, MQW multiple quantum well active layer 106, p-AlGaInP limiting layer 107, p-GaP Window layer 108。
Wherein n-GaAs ohmic contact layer 104 preferred thickness is 20nm to 100nm, and doping content is 1 × 1019cm-3Above, doped chemical is Si, in order to form good Ohmic contact with Ohmic contact point 204。
The preferred thickness of p-GaP Window layer 108 is 600nm to 8000nm, and doping content is 1 × 1018cm-3Above, doped chemical is Mg, to ensure the good Ohmic contact in p face and current expansion ability。
2) adopting acetone, isopropanol, deionized water to clean the p-GaP Window layer 108 in epitaxial wafer front successively, nitrogen dries up, and deposits SiO in p-GaP Window layer2Media coating 109, by spin coating positive photoresist, exposure, mask pattern is made in development, adopts BOE solution by SiO2Media coating 109 etches conductive hole, at the Al of AuZn and the 500nm that media coating 109 surface evaporation thickness is 300nm as metallic reflector 110。Metallic reflector 110 can also adopt any one or combination in Ag, Al, Au, AuZn alloy, AuBe alloy。By SiO2Media coating 109 and AuZn/Al metallic reflector 110 collectively form ODR reflecting mirror, simultaneously SiO2In deielectric-coating conductive hole, AuZn and p-GaP Window layer 108 forms good electrical contact through 440 DEG C of 10min that anneal。Deielectric-coating 109 can also adopt Si3N4、MgF2, any one or combination in ITO。
Above-mentioned SiO2Media coating 109 can also adopt Si3N4、MgF2, in ITO at least any one。
On the ODR reflecting mirror made, evaporation thickness is that the Au of 1000nm is as metal bonding layer 111。
3) as in figure 2 it is shown, on permanent substrate Si substrate 201 evaporation thickness be that the Au of 1000nm is as metal bonding layer 202。
Permanent substrate can also adopt any one in Mo substrate, Cu substrate, SiC substrate, Ge substrate, molybdenum-copper substrate or tungsten-copper alloy substrate。
4) by step 2) goods made of the goods made and step 3) immerse ultrasonic cleaning 10min in acetone soln, and then clean with isopropanol and deionized water rinsing respectively, nitrogen dries up。By relative with 202 for metal bonding layer 111,300 DEG C, through 20min, both are bonded to together under 5000kg pressure effect。
5) the temporary substrates GaAs substrate 101 utilizing the goods that step 4) made by mechanical lapping mode is thinned to residue about 20 μm, then is the NH of 1:5 by volume ratio4OH and H2O2Mixed solution etching 10min, removes GaAs temporary substrates 101 and cushion 102, and chemical etching stops on GaInP cutoff layer 103, then immerses HCl and the H that volume ratio is 1:23PO4Mixed solution etches 1min, removes GaInP cutoff layer 103, expose n-GaAs ohmic contact layer 104。
6), by spin coating negative photoresist on n-GaAs ohmic contact layer 104, after soft baking, exposure, development, put into Au, the Lift-off of AuGe and the 100nm thickness of cold plating 50nm thickness in electron beam evaporation platform and produce Ohmic contact point 204。
7) in 350 DEG C of nitrogen atmosphere annealing furnaces, be annealed 10min process, make AuGe Au Ohmic contact point 204 and n-GaAs ohmic contact layer 104 form good electrical contact, then immerse the H that volume ratio is 1: 2: 2 again3PO4、H2O2And H2The mixed solution of O, etches n-GaAs ohmic contact layer 104 figure, only retains the n-GaAs ohmic contact layer 104 below Ohmic contact point 204。
8) mode of electron beam evaporation or magnetron sputtering can be adopted to deposit at n-AlGaInP limiting layer 105 and one layer of ITO current extending 205, ITO current extending 205 of Ohmic contact point 204 disposed thereon。
ITO current extending 205 surface is alligatoring shape, and the surface topography of its alligatoring shape can pass through to regulate ito thin film deposition process parameters and obtain, or obtained by such as the wet etchings such as concentrated sulphuric acid, or adopts dry etching to obtain。
It is illustrated in figure 5 the present invention by regulating the ITO surface topography of electron beam evaporation process gain of parameter。
9) at ITO layer surface spin coating negative photoresist, soft baking, exposure, developing, be spin-dried for, then carry out plasma gluing, the Au, the Lift-off that are deposited with 4 μ m thick complete the making of main electrode 206。
10) at the surface spin coating positive photoresist of ITO current extending 205 and main electrode 206, soft baking, exposure, development, firmly dry, form masking layer figure during etching Cutting Road。Being immersed by wafer in ITO etching solution, wet etching removes the ITO of Cutting Road, then adopts ICP dry etching epitaxial layer, and the degree of depth reaches p-GaP Window layer 108, forms Cutting Road, then removes photoresist, cleans。
Any one method in the cutting of wet etching, blade, cut can also be adopted during etching Cutting Road。
11) the mode evaporation thickness respectively, at permanent substrate Si substrate 201 back side adopting electron beam heat evaporation is Ti and the Au of 20nm and 100nm, completes the making of LED chip back electrode 203。
When permanent substrate is any one in Si substrate, Ge substrate, SiC substrate, step 11) needs to comprise substrate thinning, back electrode evaporation, three contents of back electrode alloy。
12) test, cutting, sliver, complete LED chip technological process, obtain independent LED chip。
Two, the product structure feature made:
As shown in Figure 3,4, the permanent substrate 201 have back electrode 203 is disposed with metal bonding layer 202 and 111, ODR reflecting mirror 110 and 109, epitaxial layer 104 to 108, ITO current extending 205 and main electrode 206。
Wherein, epitaxial layer includes: p-GaP Window layer 108, p-AlGaInP limiting layer 107, MQW multiple quantum well active layer 106, n-AlGaInP limiting layer 105, n-GaAs ohmic contact layer 104。
ODR reflecting mirror is made up of metallic reflector 110 and media coating 109, and media coating 109 is connected with the Window layer 108 in epitaxial layer；Metallic reflector 110 is connected with metal bonding layer 111；ITO current extending 205 and main electrode 206 are electrically connected；Ohmic contact point 204 it is provided with between ITO current extending 205 and epitaxial layer。
ITO current extending 205 surface is alligatoring shape as seen from Figure 5, and alligatoring shape pattern character size is 5nm～200nm。
The characteristic size of above alligatoring shape figure refers to the lateral dimension of " graininess ", is the noun in the semiconducter IC industry used。

Claims (9)

1. surface covers the reversed polarity AlGaInP base LED of ITO layer, it is characterised in that: in the permanent substrate have back electrode, it is disposed with metal bonding layer, ODR reflecting mirror, epitaxial layer, ITO extension current extending and main electrode；Described ODR reflecting mirror is made up of interconnective metallic reflector and media coating, and media coating is connected with epitaxial layer；Metallic reflector is connected with metal bonding layer；Ohmic contact point it is provided with between ITO current extending and epitaxial layer；ITO current extending surface is alligatoring shape。
2. surface covers the reversed polarity AlGaInP base LED of ITO layer according to claim 1, it is characterised in that ITO current extending surface coarsening shape pattern character size is 5nm～200nm。
3. surface covers the reversed polarity AlGaInP base LED of ITO layer according to claim 1, it is characterised in that described epitaxial layer includes: p-GaP Window layer, p-AlGaInP limiting layer, MQW multiple quantum well active layer, n-AlGaInP limiting layer, n-GaAs ohmic contact layer。
4. surface covers the reversed polarity AlGaInP base LED of ITO layer according to claim 1, it is characterised in that described media coating is SiO2、Si3N4、MgF2, in ITO at least any one。
5. according to claim 1 surface cover ITO layer reversed polarity AlGaInP base LED, it is characterised in that described metallic reflector be in Ag, Al, Au, AuZn alloy, AuBe alloy at least any one。
6. surface covers the manufacture method of the reversed polarity AlGaInP base LED of ITO layer as claimed in claim 1, comprises the following steps:
1) on temporary substrates successively epitaxial growth buffer, etch stop layers, n-GaAs ohmic contact layer, n-AlGaInP limiting layer, MQW multiple quantum well active layer, p-AlGaInP limiting layer, p-GaP Window layer, formed epitaxial wafer；
2) in the p-GaP Window layer of epitaxial wafer, media coating, metallic reflector and metal bonding layer are made successively；
3) metal bonding layer is made in permanent substrate front；
4) by the metal bonding layer on epitaxial wafer and the metal bonding layer in permanent substrate, on wafer bonding to permanent substrate, the crude product of bonding will be formed；
5) remove the temporary substrates on the crude product being bonded, cushion and etch stop layers, expose n-GaAs ohmic contact layer；
6) photoetching, evaporation metal, Lift-off produce Ohmic contact point；
7) etch n-GaAs Ohmic contact layer pattern, only retain the n-GaAs ohmic contact layer below Ohmic contact point；
8) at n-AlGaInP limiting layer and Ohmic contact one layer of ITO current extending of some disposed thereon, and roughening treatment is done on ITO current extending surface；
9) carry out photoetching on ITO current extending surface, evaporation metal, Lift-off complete main electrode and make；
10) carrying out photoetching on ITO current extending surface, surface, luminous zone forms photoresist protective layer, only exposes Cutting Road, then etches away the ITO current extending of Cutting Road with ITO etching solution, then etch Cutting Road, and etch depth reaches p-GaP Window layer；
11) back electrode is made at the permanent substrate back side；
12) cutting, sliver, obtain LED chip。
7. manufacture method according to claim 6, it is characterised in that described step 2) in, described media coating is SiO2、Si3N4、MgF2, in ITO at least any one。
8. manufacture method according to claim 6 or 7, it is characterised in that described step 2) in, described metallic reflector be in Ag, Al, Au, AuZn alloy, AuBe alloy at least any one。
9. manufacture method according to claim 6, it is characterised in that in described step 8), described ITO current extending surface coarsening shape pattern character size is 5nm～200nm。
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CN107394015A (en) * 2017-07-15 2017-11-24 太原理工大学 A kind of AlGaInP reversed polarity light-emitting diodes tube preparation methods based on 3D printing
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