CN114864778A - Vertical blue light LED chip and preparation method thereof - Google Patents
Vertical blue light LED chip and preparation method thereof Download PDFInfo
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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Abstract
The invention discloses a vertical blue light LED chip and a preparation method thereof, wherein the LED chip sequentially comprises a conductive substrate, a second metal bonding layer, a first metal bonding layer, an N electrode layer, a second insulating layer, a second reflecting layer, a first insulating layer, a reflecting protective layer and a first reflecting layer from bottom to top; the device also comprises a columnar P electrode, a columnar N electrode, an epitaxial layer and a passivation protective layer; according to the vertical blue light LED chip, an embedded electrode vertical structure is adopted, namely, the columnar N electrode and the columnar P electrode are arranged at the same time, the second reflecting layer and the second insulating layer are introduced, and through the structure and size design, the good ohmic contact between the N electrode and N-GaN is guaranteed, meanwhile, the reflectivity of the area between the N electrode hole of the core particle and the reflecting protective layer hole and the reflectivity of the side wall of the N electrode hole are increased, and the light emitting efficiency of the core particle is improved.
Description
Technical Field
The invention relates to the technical field of LED chip manufacturing, in particular to a vertical blue LED chip and a preparation method thereof.
Background
With the ever-expanding market share of LED lighting, the requirements for lighting performance such as lighting efficiency of LEDs are higher and higher, and the demand for large-power and even ultra-large-size LED chips in the market becomes more and more mainstream from the common household lighting lamps to the street lamps and headlight systems requiring higher power. The first problem that is faced first by super-power, super-sized LEDs is current crowding. The embedded electrode structure LED chip has many advantages compared with the chip of the traditional structure: the current expansibility is better, the conductivity is better, the heat dispersion is better and the light extraction rate is higher.
The embedded electrode structure LED chip makes up the defects of the traditional vertical structure chip, so that the lighting performance of the LED is higher on the first floor. However, in the process of manufacturing the N electrode of the embedded electrode structure chip, in order to ensure that the metal electrode and the N-GaN form a good ohmic contact, metals such as Cr/Ti/Al are generally used as an N-GaN contact layer, but the reflectivity of the metals such as Cr/Ti/Al in a blue light band is relatively low; meanwhile, in order to avoid abnormal yield of the product caused by Ag migration, the Ag reflector needs to be spaced from the N electrode hole by a sufficient distance, so that the reflectivity around the N electrode hole and the hole of the LED chip with the embedded electrode structure is low.
Disclosure of Invention
In order to overcome the defects of the prior art, one of the objectives of the present invention is to provide a vertical blue LED chip, which can make the N electrode and the N-GaN layer form a good ohmic contact, and simultaneously improve the reflectivity around and in the N electrode hole, thereby improving the light extraction efficiency of the chip; the invention also aims to provide a preparation method of the vertical blue light LED chip, which improves the reflectivity around the N electrode hole of the chip and in the hole by adjusting the chip structure design and the preparation process, and effectively improves the light-emitting efficiency of the product.
One of the purposes of the invention is realized by adopting the following technical scheme:
a vertical blue light LED chip sequentially comprises a conductive substrate, a second metal bonding layer, a first metal bonding layer, an N electrode layer, a second insulating layer, a second reflecting layer, a first insulating layer, a reflecting protective layer and a first reflecting layer from bottom to top; the device also comprises a columnar P electrode, a columnar N electrode, an epitaxial layer and a passivation protective layer; the columnar N electrode is positioned in the epitaxial layer, the thickness of the columnar N electrode is smaller than the depth of a hole of the columnar N electrode, the columnar N electrode is in contact with the N electrode layer to form electric conduction, and the bottom of the N electrode layer is in contact with the first metal bonding layer to form electric conduction; the columnar P electrode is positioned at the edge of the chip, and the bottom of the columnar P electrode is in contact with the reflection protection layer to form electric conduction.
Further, the second metal bonding layer is in a combined layer structure of one or more than two of Cr, Ti, Ni, Al, Pt, Sn and Au, and the thickness of the second metal bonding layer is 1-4 μm; the first metal bonding layer is in a combined layer structure of more than two of Cr, Ti, Ni, Al, Pt, Sn and Au, and the thickness of the first metal bonding layer is 2-6 mu m.
And furthermore, the N electrode layer is of a combined layer structure of one or more of Ti, Al, Pt and Au, and the thickness of the N electrode layer is 10 nm-1000 nm.
Furthermore, the depth of the columnar N electrode hole is 1000 nm-2000 nm.
Still further, the first reflecting layer is Ag and/or Ni, and the thickness of the first reflecting layer is 100 nm-200 nm; the second reflecting layer is in a combined layer structure of one or more than two of Ag, Cr, Ti and Ni, and the thickness of the second reflecting layer is 50 nm-300 nm.
Further, the metal used by the first reflecting layer is Ag and/or Ni, and the thickness of the first reflecting layer is 100 nm-200 nm; the metal used by the second reflecting layer is Ni or Ti, and the thickness of the second reflecting layer is 0.1 nm-2 nm.
Still further, the first insulating layer is SiO 2 The thickness is 600nm-1000 nm; the second insulating layer is SiO 2 The thickness is 200nm-500 nm.
Furthermore, the radius of the open pore of the second reflecting layer and the second insulating layer is smaller than that of the columnar N electrode, and the difference value of the pore radii is 2000nm-5000 nm.
Furthermore, the reflecting protective layer is in a combined layer structure of one or more than two of Ti, Cr, Pt and Au, and the thickness is 500 nm-2000 nm.
The second purpose of the invention is realized by adopting the following technical scheme:
the preparation method of the vertical blue light LED chip comprises the following steps:
1) sequentially growing a buffer layer, an n-GaN layer, an InGaN/GaN multi-quantum well layer and a p-GaN layer on an epitaxial substrate to form an LED epitaxial wafer;
2) cleaning the LED epitaxial wafer, and then preparing photoetching alignment MARK points and columnar N electrode channels;
3) sequentially preparing a graphical first reflecting layer and a reflecting protective layer on the LED epitaxial wafer processed in the step 2);
4) depositing a first insulating layer;
5) wet etching is carried out on the first insulating layer at the position of the contact hole of the columnar N electrode to remove the first insulating layer, the columnar N electrode is prepared, and high-temperature annealing is carried out;
6) depositing a second insulating layer and a second reflecting layer in sequence;
7) removing the second reflecting layer and the second insulating layer at the position of the contact hole of the N electrode layer by wet etching, and preparing the N electrode layer;
8) preparing a first metal bonding layer on the N electrode layer;
9) selecting a conductive substrate, and depositing a second metal bonding layer on the surface of the conductive substrate;
10) aligning the first metal bonding layer and the second metal bonding layer for bonding;
11) removing the epitaxial substrate and the buffer layer by grinding and thinning, chemical corrosion and an inductive coupling plasma etching method;
12) roughening the surface of the chip treated in the step 8);
13) wet etching to form core grain cutting path and columnar P electrode area;
14) depositing a passivation layer on the surface of the chip treated in the step 9), manufacturing an electrode pattern by using a photoetching method, and manufacturing a P electrode by using an electron beam evaporation or sputtering method to obtain the vertical blue LED chip.
Compared with the prior art, the invention has the beneficial effects that:
(1) according to the vertical blue light LED chip, an embedded electrode vertical structure is adopted, namely, a columnar N electrode and a columnar P electrode are arranged at the same time, a second reflecting layer and a second insulating layer are introduced, the aperture of an opening of the second insulating layer is smaller than that of the columnar N electrode, the product yield abnormity caused by migration of Ag in the second reflecting layer can be effectively avoided, the second reflecting layer can improve light reflection in and around a columnar N electrode channel, through a method for preparing the columnar N electrode, the good ohmic contact between the N electrode and N-GaN is guaranteed, meanwhile, the reflectivity of an area between a core grain N electrode hole and a reflecting protective layer hole and the reflectivity of the side wall of the N electrode hole are increased, and the light emitting efficiency of the core grain is improved.
Drawings
Fig. 1 is a sectional view of an LED chip prepared in example 1;
fig. 2 is a sectional view of the LED chip prepared in comparative example 1;
in the figure: 1. a conductive substrate; 2. a second metal bonding layer; 3. a first metal bonding layer; 4. an N electrode layer; 5. a second reflective layer; 6. a second insulating layer; 7. a first insulating layer; 8. a reflective protective layer; 9. a first reflective layer; 10. a columnar N electrode; 11. a columnar P electrode; 12. passivating the protective layer; 13. a p-GaN layer; 14. an InGaN/GaN multi-quantum well layer; 15. and an n-GaN layer.
Detailed Description
The present invention will be further described with reference to the accompanying drawings and the detailed description, and it should be noted that any combination of the embodiments or technical features described below can be used to form a new embodiment without conflict.
Example 1
A vertical blue light LED chip comprises a conductive substrate 1, a second metal bonding layer 2, a first metal bonding layer 3, an N electrode layer 4, a second reflecting layer 5, a second insulating layer 6, a first insulating layer 7, a reflecting protective layer 8, a first reflecting layer 9, a columnar N electrode 10, a columnar P electrode 11, an LED epitaxial wafer and a passivation protective layer 12 from bottom to top in sequence as shown in figure 1; the LED epitaxial wafer sequentially comprises a p-GaN layer 13, an InGaN/GaN multi-quantum well layer 14 and an n-GaN layer 15 from bottom to top;
the columnar N electrode 10 is positioned in the epitaxial layer, the thickness of the columnar N electrode is smaller than the depth of an N electrode hole, the columnar N electrode 10 is in contact with the N electrode layer 4 to form electric conduction, and the bottom of the N electrode layer 4 is in contact with the first metal bonding layer 3 to form electric conduction; the columnar P electrode 11 is positioned at the edge of the chip, and the bottom of the columnar P electrode is in contact with the reflection protection layer 8 to form electric conduction;
wherein the conductive substrate 1 is a conductive silicon substrate with the thickness of 500 μm; the second metal bonding layer 2 and the first metal bonding layer 3 are both Cr, Al, Ti, Pt, Ni and Au composite metal layers, and the thicknesses of the metal layers are 2000 nm; the N electrode layer 4 is of a combined layer structure of Ti, Al, Pt and Au, the thickness of Ti is 300nm, the thickness of Al is 100nm, the thickness of Pt is 500nm, and the thickness of Au is 50 nm; the second reflecting layer 5 is a Ti, Ag and Ni combined layer structure, the thickness of Ni is 1nm, the thickness of Ag is 100nm, and the thickness of Ti is 100 nm; the second insulating layer 6 is SiO 2 The thickness is 200 nm; the first insulating layer 7 is SiO 2 The thickness is 800 nm; the reflection protection layer 8 is a combined layer structure of Ti, Pt and Au, the thickness of Ti is 200nm, the thickness of Pt is 500nm, and the thickness of Au is 300 nm; the first reflecting layer 9 is a Ni and Ag combined layer structure, the thickness of Ni is 0.7nm, and the thickness of Ag is 150 nm; the columnar N electrode 10 is of a Cr, Al, Pt and Au combined layer structure, the thickness of Cr is 5nm, the thickness of Al is 100nm, the thickness of Pt is 200nm, and the thickness of Au is 200 nm; the passivation protective layer 12 is SiO 2 The thickness is 400 nm;
the p-GaN layer 13, the InGaN/GaN multi-quantum well layer 14, and the n-GaN layer 15 may be selected by those skilled in the art, and are not limited in embodiments of the present invention.
The preparation method of the vertical blue light LED chip comprises the following steps:
1) growing a buffer layer, an n-GaN layer 15, an InGaN/GaN multi-quantum well layer 14 and a p-GaN layer 13 on an epitaxial substrate in sequence by using MOCVD equipment to form an LED epitaxial wafer;
sequentially cleaning the obtained LED epitaxial wafer in organic cleaning tank containing acetone and isopropyl acetone for 5min, ultrasonic cleaning in deionized water cleaning tank for 10min, acid cleaning tank, and SPM (H2 SO) 4 、H 2 O 2 And H 2 Mixed liquor of O) for 10min, and then put into a deionized water cleaning tank for ultrasonic cleaning for 10 min. Finally, placing the LED epitaxial wafer in a spin dryer for spin drying, and simultaneously adding hot N 2 And (5) drying.
2) Photoetching alignment MARK points and columnar N electrode channels are prepared on the surface of the LED epitaxial wafer, and the etching depth is 1.2 mu m.
3) The first reflecting layer 9 is deposited on the surface of the LED epitaxial wafer by using an electron beam evaporation or sputtering method, and then annealing operation, photoetching and wet etching are carried out.
4) And preparing the reflective protection layer 8 on the surface of the epitaxial wafer prepared in the third step by utilizing a photoetching, electron beam evaporation or sputtering mode.
5) Depositing a first insulating layer 7 on the surface of the epitaxial wafer, and preparing a contact hole between a columnar N electrode 10 and an N-GaN layer 15 through photoetching and wet etching;
6) preparing a columnar N electrode 10 in a channel of the columnar N electrode 10;
7) depositing a second insulating layer 6 and a second reflecting layer 5 on the surface of the epitaxial wafer in the step 6) in sequence, and preparing a contact hole of the N electrode layer 4 by photoetching and wet etching;
8) depositing an N electrode layer 4 and a first metal bonding layer 3 on the surface of the LED epitaxial wafer by using an electron beam evaporation method;
9) selecting a conductive substrate 1, and depositing a second metal bonding layer 2 on the surface of the conductive substrate;
10) aligning the first metal bonding layer 3 and the second metal bonding layer 2 for bonding;
11) grinding and thinning, chemically corroding and removing the epitaxial substrate and the buffer layer by adopting an inductive coupling plasma etching method;
12) roughening the surface of the chip treated in the step 11); the roughening treatment mode is that KOH aqueous solution with the percentage concentration of 7.5 percent and the temperature of 80 ℃ is used for treatment;
13) etching the core grain cutting path and the columnar P electrode 11 to the reflecting protective layer 8 by a high-temperature phosphoric acid wet method;
14) depositing a passivation protective layer 12 on the surface of the chip treated in the step 13), manufacturing an electrode pattern by using a photoetching method, and manufacturing a columnar P electrode 11 by using an electron beam evaporation or sputtering method to obtain the vertical blue LED chip.
Comparative example 1
The structure of comparative example 1 is different from that of example 1 in that the second reflective layer 5, the second insulating layer 6, and the columnar N-electrode 10 are not included. As shown in fig. 2, the vertical blue LED chip of comparative example 1 includes, from bottom to top, a conductive substrate 1, a second metal bonding layer 2, a first metal bonding layer 3, an N electrode layer 4, a first insulating layer 7, a reflective protection layer 8, a first reflective layer 9, a P-GaN layer 13, an InGaN/GaN multiple quantum well layer 14, an N-GaN layer 15, a passivation protection layer 12, and a columnar P electrode 11.
The preparation method of the LED chip comprises the following steps:
1) growing a buffer layer, an n-GaN layer 15, an InGaN/GaN multi-quantum well layer 14 and a p-GaN layer 13 on an epitaxial substrate in sequence by using MOCVD equipment to form an LED epitaxial wafer;
sequentially cleaning the obtained LED epitaxial wafer in organic cleaning tank containing acetone and isopropyl acetone for 5min, ultrasonic cleaning in deionized water cleaning tank for 10min, acid cleaning tank, and SPM (hydrogen peroxide methyl ether) 2 SO 4 、H 2 O 2 And H 2 Mixed liquor of O) for 10min, and then put into a deionized water cleaning tank for ultrasonic cleaning for 10 min. Finally, placing the LED epitaxial wafer in a spin dryer for spin drying, and simultaneously adding hot N 2 And (5) drying.
2) And performing photoetching and ICP etching on the surface of the LED epitaxial wafer, and preparing photoetching alignment MARK points on the surface of the epitaxial wafer.
3) The method comprises the steps of depositing a first reflecting layer 9 on the surface of an LED epitaxial wafer by using an electron beam evaporation or sputtering method, and then carrying out annealing operation, photoetching and wet etching to prepare an imaged first reflecting layer 9.
4) And preparing a reflective protection layer 8 on the surface of the epitaxial wafer prepared in the step 3) by utilizing a photoetching, electron beam evaporation or sputtering mode.
5) Depositing a first insulating layer 7 on the surface of the epitaxial wafer, and preparing a contact hole between the N electrode layer 4 and the N-GaN layer 15 through photoetching and wet etching;
6) depositing an N electrode layer 4 and a first metal bonding layer 3 on the surface of the LED epitaxial wafer by using an electron beam evaporation method;
7) selecting a conductive substrate 1, and depositing a second metal bonding layer 2 on the surface of the conductive substrate;
8) aligning the first metal bonding layer 3 and the second metal bonding layer 2 for bonding;
9) removing the epitaxial substrate and the buffer layer by grinding and thinning, chemical corrosion and an inductive coupling plasma etching method;
10) roughening the surface of the chip treated in the step 9); the roughening treatment mode is that KOH aqueous solution with the percentage concentration of 7.5 percent and the temperature of 80 ℃ is used for treatment;
11) corroding the core grain cutting path to the reflecting protective layer 8 by using a high-temperature phosphoric acid wet method;
12) depositing a passivation protective layer 12 on the surface of the chip treated in the step 11), manufacturing an electrode pattern by using a photoetching method, and manufacturing a columnar P electrode 11 by using an electron beam evaporation or sputtering method to obtain the vertical blue LED chip.
The chips prepared in example 1 and comparative example 1 are subjected to tape-out verification, and the multi-round test results show that the light extraction efficiency of the chip in example 1 is improved by about 2% compared with that of comparative example 1. Specific experimental data are shown in table 1.
Table 1 optical data of LED chips of example 1 and comparative example 1
| Luminous area mm 2 | Luminous power mW | Test current mA | Forward voltage V | Luminous efficiency | |
| Example 1 | 1.96 | 624 | 350 | 2.8 | 63.67％ |
| Comparative example 1 | 1.96 | 612 | 350 | 2.8 | 62.45％ |
The above embodiments are only preferred embodiments of the present invention, and the protection scope of the present invention is not limited thereby, and any insubstantial changes and substitutions made by those skilled in the art based on the present invention are within the protection scope of the present invention.
Claims (10)
1. A vertical blue light LED chip is characterized by sequentially comprising a conductive substrate, a second metal bonding layer, a first metal bonding layer, an N electrode layer, a second insulating layer, a second reflecting layer, a first insulating layer, a reflecting protective layer and a first reflecting layer from bottom to top; the device also comprises a columnar P electrode, a columnar N electrode, an epitaxial layer and a passivation protective layer; the columnar N electrode is positioned in the epitaxial layer, the thickness of the columnar N electrode is smaller than the depth of a hole of the columnar N electrode, the columnar N electrode is in contact with the N electrode layer to form electric conduction, and the bottom of the N electrode layer is in contact with the first metal bonding layer to form electric conduction; the columnar P electrode is positioned at the edge of the chip, and the bottom of the columnar P electrode is in contact with the reflection protection layer to form electric conduction.
2. The vertical blue LED chip of claim 1, wherein the second metal bonding layer has a combined layer structure of one or more of Cr, Ti, Ni, Al, Pt, Sn, and Au, and has a thickness of 1 μm to 4 μm; the first metal bonding layer is in a combined layer structure of more than two of Cr, Ti, Ni, Al, Pt, Sn and Au, and the thickness of the first metal bonding layer is 2-6 mu m.
3. The vertical blue LED chip of claim 1, wherein the N electrode layer is a composite layer structure of one or more of Ti, Al, Pt and Au, and the thickness of the N electrode layer is 10nm to 1000 nm.
4. The vertical blue LED chip of claim 1, wherein the hole depth of the pillar-shaped N-electrode is 1000nm to 2000 nm.
5. The vertical blue LED chip of claim 1, wherein the first reflective layer is Ag and/or Ni, the first reflective layer has a thickness of 100nm to 200 nm; the second reflecting layer is in a combined layer structure of one or more than two of Ag, Cr, Ti and Ni, and the thickness of the second reflecting layer is 50 nm-300 nm.
6. The vertical blue LED chip of claim 1, wherein the metal used for the first reflective layer is Ag and/or Ni, and the thickness of the first reflective layer is 100nm to 200 nm; the metal used by the second reflecting layer is Ni or Ti, and the thickness of the second reflecting layer is 0.1 nm-2 nm.
7. The vertical blue LED chip of claim 1, wherein the first insulating layer is SiO 2 The thickness is 600nm-1000 nm; the second insulating layer is SiO 2 The thickness is 200nm-500 nm.
8. The vertical blue LED chip of claim 1, wherein the aperture of the second reflective layer and the second insulating layer has a smaller aperture radius than the cylindrical N-electrode radius by a difference of 2000nm to 5000 nm.
9. The vertical blue LED chip of claim 1, wherein the reflective protection layer is a composite layer structure of one or more of Ti, Cr, Pt and Au, and has a thickness of 500nm to 2000 nm.
10. The method for preparing the vertical blue LED chip according to any one of claims 1 to 9, comprising the following steps:
1) sequentially growing a buffer layer, an n-GaN layer, an InGaN/GaN multi-quantum well layer and a p-GaN layer on an epitaxial substrate to form an LED epitaxial wafer;
2) cleaning the LED epitaxial wafer, and then preparing photoetching alignment MARK points and columnar N electrode channels;
3) sequentially preparing a graphical first reflecting layer and a reflecting protective layer on the LED epitaxial wafer processed in the step 2);
4) depositing a first insulating layer;
5) wet etching is carried out on the first insulating layer at the position of the contact hole of the columnar N electrode to remove the first insulating layer, the columnar N electrode is prepared, and high-temperature annealing is carried out;
6) depositing a second insulating layer and a second reflecting layer in sequence;
7) wet etching is carried out on the second reflecting layer and the second insulating layer at the position of the contact hole of the N electrode layer, and the N electrode layer is prepared;
8) preparing a first metal bonding layer on the N electrode layer;
9) selecting a conductive substrate, and depositing a second metal bonding layer on the surface of the conductive substrate;
10) aligning the first metal bonding layer and the second metal bonding layer for bonding;
11) removing the epitaxial substrate and the buffer layer;
12) roughening the surface of the chip treated in the step 8);
13) wet etching to form core grain cutting path and columnar P electrode area;
14) depositing a passivation layer on the surface of the chip treated in the step 9), manufacturing an electrode pattern, and then manufacturing a P electrode to obtain the vertical blue LED chip.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116759513A (en) * | 2023-08-14 | 2023-09-15 | 南昌凯捷半导体科技有限公司 | Mirror surface cladding structure reverse polarity red light LED chip and manufacturing method thereof |
| CN117810318A (en) * | 2024-02-29 | 2024-04-02 | 江西兆驰半导体有限公司 | High-voltage Micro-LED chip and preparation method thereof |
-
2022
- 2022-04-27 CN CN202210458767.3A patent/CN114864778A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116759513A (en) * | 2023-08-14 | 2023-09-15 | 南昌凯捷半导体科技有限公司 | Mirror surface cladding structure reverse polarity red light LED chip and manufacturing method thereof |
| CN116759513B (en) * | 2023-08-14 | 2023-12-01 | 南昌凯捷半导体科技有限公司 | Mirror surface cladding structure reverse polarity red light LED chip and manufacturing method thereof |
| CN117810318A (en) * | 2024-02-29 | 2024-04-02 | 江西兆驰半导体有限公司 | High-voltage Micro-LED chip and preparation method thereof |
| CN117810318B (en) * | 2024-02-29 | 2024-05-07 | 江西兆驰半导体有限公司 | High-voltage Micro-LED chip and preparation method thereof |
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