CN110034216A - III-V nitride deep-UV light-emitting diode structure and preparation method thereof - Google Patents
III-V nitride deep-UV light-emitting diode structure and preparation method thereof Download PDFInfo
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- CN110034216A CN110034216A CN201810030554.4A CN201810030554A CN110034216A CN 110034216 A CN110034216 A CN 110034216A CN 201810030554 A CN201810030554 A CN 201810030554A CN 110034216 A CN110034216 A CN 110034216A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
Abstract
The invention discloses a kind of group III-nitride deep-UV light-emitting diode structures and preparation method thereof.Wherein, the production method includes: the step of growth forms the epitaxial structure of deep-UV light-emitting diode on substrate, the epitaxial structure includes successively n-contact layer formed on a substrate, active area, electronic barrier layer and P type contact layer, and the step of making the n-type electrode being electrically connected respectively with n-contact layer, P type contact layer, p-type electrode；And further include the steps that the micro-nano structure for taking light to enhance described in processing formation on the light-emitting surface for being located at the side the light emitting diode construction n, the light-emitting surface isNitrogen face.III-V nitride deep-UV light-emitting diode structure provided by the invention has many advantages, such as that efficiency of light extraction is high, thermal resistance is low, junction temperature is low and stability is good; device performance and the service life of deep-UV light-emitting diode can substantially be enhanced; and its manufacture craft is simple and fast, is easy to scale implementation.
Description
Technical field
The present invention relates to a kind of light emitting diode, in particular to a kind of III-V nitride deep-UV light-emitting diode knot
Structure and preparation method thereof belongs to semiconductor light electro-technical field.
Background technique
III-V nitride semiconductor is referred to as third generation semiconductor material, the big, chemical stability with forbidden bandwidth
Well, the advantages that Flouride-resistani acid phesphatase is strong；Its forbidden bandwidth covers from deep ultraviolet, entire visible light, near infrared range, can be used for making
Light emitting semiconductor device, such as light emitting diode, laser and super-radiance light emitting diode.It is partly led based on III-V nitride
The deep-UV light-emitting diode of body has many advantages, such as that energy conservation and environmental protection, production is simple, small in size, light-weight, the service life is long, disappears in sterilization
Poison, water body purification, ultraviolet light solidification, plant illumination and gemstone testing etc. have a vast market application prospect.However
Current deep-UV light-emitting diode output power is very low, only mW magnitude, two magnitudes smaller than blue LED.At present
Deep-UV light-emitting diode external quantum efficiency it is very low, typically less than 10%, main bottleneck is current deep-UV light-emitting
The efficiency of light extraction of diode is very low, and only 10% or so, much smaller than the external quantum efficiency (> 80%) of blue LED.It leads
In terms of the main reason for causing deep-UV light-emitting diode efficiency of light extraction low has following two:
On the one hand, since Sapphire Substrate will not absorb deep ultraviolet light substantially, and Sapphire Substrate is dirt cheap, thus existing
There is deep-UV light-emitting diode similar with most of blue LEDs, mainly grows on a sapphire substrate, such as
Shown in CN103137822B, CN103943737B and CN105977353A.However GaN buffer layer is used with blue LED
Difference, deep-UV light-emitting diode generally use AlN as buffer layer, since the forbidden bandwidth (6.2eV) of AlN is much larger than GaN
Forbidden bandwidth (3.4eV), be currently used for Sapphire Substrate GaN base blue LED removing laser output laser
(4.5eV) can only be absorbed by GaN buffer layer, and can not be by AlN buffer layer efficient absorption, therefore be not used to Sapphire Substrate
The removing of AlN base deep-UV light-emitting diode.And AlN epitaxial material is more crisp, is easily broken when being impacted, therefore very
Hardly possible prepares the thin-film led structure similar with Sapphire Substrate GaN base blue LED.In addition, due to Al atom
Transfer ability it is weaker, be difficult growth table on sapphire pattern substrate (Patterned Sapphire Substrate, PSS)
The smooth high quality AlN material in face, therefore epitaxial growth AlN and deep-UV light-emitting diode usually on sapphire plain film substrate
Structure, the epitaxial layer grown are also planar structure, and when light is emitted from Sapphire Substrate or nitride epitaxial layer, the angle of total reflection is non-
It is often small, it is easy to happen total reflection, causes most of light to be absorbed during multiple internal reflection by internal material, therefore deep ultraviolet
The efficiency of light extraction of light emitting diode is very low, output power very little.
On the other hand, for III-V nitride semiconductor, InN, GaN material and its alloy InGaN material are sent out
Light out is TE polarization mode, and light can be emitted from the surface of light emitting diode.And for the AlGaN material of AlN and high Al contents
Material, due to the variation of valence band structure, the light issued is mainly TM polarization mode, and most of light can not be from the table of light emitting diode
Face outgoing, can only be emitted from the side of light emitting diode.For deep-UV light-emitting diode, active area be usually AlGaN or
AlInGaN material, as the wavelength of light emitting diode is mobile toward shortwave direction, the Al component in active area increases, light-emitting diodes
The light ratio that TM is polarized in pipe increases, and the light ratio of TE polarization is reduced, and the light ratio that can be emitted from epitaxial wafer surface is caused to reduce.
For traditional deep-UV light-emitting diode, surface area is larger (300 300 μm of μ m magnitude), and (300 μm of sidewall area very little
× 2 μm of magnitudes), when the optical transport that LED internal issues is to side wall, it is largely at least partially by the active region own absorption, therefore dark purple
The efficiency of light extraction of UV light-emitting diode is very low, output power very little.
In addition, generalling use two luxuriant magnesium (CP for III-V nitride semiconductor2Mg it) is used as p-type dopant, due to
Ionization energy of the Mg acceptor in nitride is higher (GaN:170meV, AlN:470meV), and typically less than 10% Mg acceptor occurs
Ionization, therefore hole concentration is lower in p-type nitride-based semiconductor.Simultaneously because the Mg acceptor doping concentration in p-type layer is higher, and
Hole effective mass is larger, and the mobility in hole is lower in p-type layer, causes p-type layer resistance larger, is much larger than n-layer resistance, because
The heat source of this deep-UV light-emitting diode is mainly p-type layer.Conventional nitride deep-UV light-emitting diode is all made of formal dress encapsulation
Mode, as shown in CN 105047775A and CN106025007A, the heat that is generated in p-type layer need to by multi-quantum well active region,
The substrate of n-layer and about 100 μ m-thicks, can just be transmitted in heat sink, and the heat flow path of light emitting diode is very long, and due to sapphire
Substrate thermal conductivity is lower, causes the thermal resistance of deep-UV light-emitting diode very big.And the thermal power of deep-UV light-emitting diode is larger,
Therefore the junction temperature of device active region is higher, has seriously affected device performance and service life.Although current segment chip encapsulation also uses
Inverted structure, but chip still uses traditional same side electrode structure, and this packaged type needs are previously deposited figure on heat sink
Shape solder need to guarantee N lateral electrode solder and the isolation of P lateral electrode solder in welding process, and need to guarantee N lateral electrode and the side P electricity
Pole is electrically connected etc., and this packaged type is very easy to generate electric leakage, so as to cause component failure etc., and shines two
Pole pipe heat dissipation need to still be not so good as the inverted structure chip using whole face contact, therefore dark purple outgoing by the lesser solder of area
The thermal resistance of optical diode is larger.Additionally due to light is emitted from sapphire surface, exit boundary interface is very remote from active area, causes dark purple
The efficiency of light extraction of UV light-emitting diode is very low, output power very little.
In addition, the chemistry of (0001) gallium face III-V nitride semiconductor material is steady relative to GaAs or InP-base material
Qualitative good, acid and alkali-resistance is not perishable, and the N-shaped platform of III-V nitride deep-UV light-emitting diode need to be formed by dry etching
Face, as shown in CN105047775A and CN106025007A.Dry etching would generally introduce surface state, damage and defect, these
Surface state, damage and defect can not only become non-radiative recombination center, influence the efficiency of deep-UV light-emitting diode；It will also become
Leak channel influences the reliability and stability of device.
Summary of the invention
The main purpose of the present invention is to provide a kind of III-V nitride deep-UV light-emitting diode structure and its production
Method, with overcome the deficiencies in the prior art.
For realization aforementioned invention purpose, the technical solution adopted by the present invention includes:
The embodiment of the invention provides a kind of III-V nitride deep-UV light-emitting diode structures, including set gradually
N-contact layer, active area, electronic barrier layer and P type contact layer, the n-contact layer, P type contact layer respectively with N-shaped electricity
Pole, p-type electrode are electrically connected
It connects, wherein the light-emitting surface positioned at the side the light emitting diode construction n isNitrogen face, and it is describedNitrogen face
On be formed with take light enhance micro-nano structure.
Further, the n-contact layer and the opposite facing side surface of active area are describedNitrogen face.
Further, the micro-nano structure for taking light to enhance is micro- comprising saw tooth like microstructures, triangle micro-structure, nano-pillar
Structure, trapezoid micro-structure, inversed trapezoid micro-structure, yurt shape micro-structure, any one or two kinds in micro-nano porous microstructure
Above combination etc., but not limited to this.
Further, the n-contact layer, P type contact layer form Ohmic contact with n-type electrode, p-type electrode respectively.
Further, the p-type electrode includes p-type contact electrode or transparent conductive film, the p-type electrode and p-type contact
Layer forms Ohmic contact.
Further, the p-type contact electrode whole face is deposited in P type contact layer.
Further, high-reflecting film is also covered in the transparent conductive film.
Further, the side p of the light emitting diode construction is bonded with support chip.
Further, perforation structure is also formed in the light emitting diode construction, the perforation structure shines from described
The side p of diode structure extends to n-contact layer, the n-type electrode be set in the perforation structure and with n-contact layer shape
At Ohmic contact.
The embodiment of the invention also provides a kind of production method of III-V nitride deep-UV light-emitting diode structure,
Include:
The step of growth forms the epitaxial structure of light emitting diode on substrate, the epitaxial structure include successively in substrate
N-contact layer, active area, electronic barrier layer and the P type contact layer of upper formation, and
The step of making the n-type electrode being electrically connected respectively with n-contact layer, P type contact layer, p-type electrode；
Characterized by further comprising:
The micro-nano structure for taking light to enhance described in processing formation on the light-emitting surface for being located at the side the light emitting diode construction n
Step, the light-emitting surface areNitrogen face.
Further, the substrate is selected from Si substrate or SiC substrate.
Further, the p-type electrode includes p-type contact electrode or transparent conductive film, the p-type electrode and p-type contact
Layer forms Ohmic contact.
Further, the p-type contact electrode whole face is deposited in P type contact layer, and the p-type contact electrode is adopted
With the metal electrode of high reflectance.
Further, high-reflecting film is also covered in the transparent conductive film.
Further, stating the micro-nano structure for taking light to enhance includes saw tooth like microstructures, triangle micro-structure, the micro- knot of nano-pillar
Structure, trapezoid micro-structure, inversed trapezoid micro-structure, yurt shape micro-structure, any one or two kinds in micro-nano porous microstructure with
On combination.
Further, the production method further include:
At least make perforation structure in the epitaxial structure, the perforation structure is from the light emitting diode construction
The side p extends to n-contact layer,
And n-type electrode is made in the perforation structure, and n-type electrode and n-contact layer is made to form Ohmic contact.
Further, the production method further include: be bonded the side p of the light emitting diode construction with support chip.
Compared with the prior art, III-V nitride deep-UV light-emitting diode structure provided by the invention, which has, takes light efficiency
The advantages that rate is high, thermal resistance is low, junction temperature is low and stability is good, can substantially enhance device performance and the longevity of deep-UV light-emitting diode
Life, and its manufacture craft is simple and fast, is easy to scale implementation.
Detailed description of the invention
Fig. 1 show nitride-based semiconductor deep-UV light-emitting diode structural schematic diagram in embodiment of the present invention one.
Fig. 2 show deep-UV light-emitting diode structural representation after formation p-type Ohmic contact in embodiment of the present invention one
Figure.
Fig. 3 show in embodiment of the present invention one deep ultraviolet after p-type Ohmic contact side etches N-shaped ohmic contact hole
Light emitting diode construction schematic diagram.
Fig. 4 show deep-UV light-emitting diode knot after the n-contact layer in embodiment of the present invention one inside exposed hole
Structure schematic diagram.
Fig. 5 is shown in embodiment of the present invention one made N-shaped Ohmic contact after deep-UV light-emitting diode structure show
It is intended to.
Fig. 6 is shown in embodiment of the present invention one remove Si substrate or SiC substrate and buffer layer after deep-UV light-emitting two
Pole pipe structural schematic diagram.
Be respectively shown in Fig. 7 a- Fig. 7 h in embodiment of the present invention oneIt is prepared on the N-shaped ohmic contact layer of nitrogen face each
Deep-UV light-emitting diode structural schematic diagram after the micro-nano structure that kind takes light to enhance.
Fig. 8 is shown corrode or etch into p-type Ohm contact electrode in embodiment of the present invention one after deep-UV light-emitting two
Pole pipe structural schematic diagram.
Fig. 9 show in embodiment of the present invention one deep-UV light-emitting diode after support chip backside deposition metal electrode
Structural schematic diagram.
Figure 10 show nitride-based semiconductor deep-UV light-emitting diode structural schematic diagram in embodiment of the present invention two.
Figure 11 show deep-UV light-emitting diode structural representation after formation p-type Ohmic contact in embodiment of the present invention two
Figure.
Figure 12 is shown in embodiment of the present invention two remove Si substrate or SiC substrate and buffer layer after deep-UV light-emitting two
Pole pipe structural schematic diagram.
Be respectively shown in Figure 13 a- Figure 13 f in embodiment of the present invention twoIt is prepared on the N-shaped ohmic contact layer of nitrogen face
Deep-UV light-emitting diode structural schematic diagram after the various micro-nano structures for taking light to enhance.
Figure 14 is shown in embodiment of the present invention two made N-shaped Ohmic contact after deep-UV light-emitting diode structure show
It is intended to.
Figure 15 is shown corrode or etch into p-type Ohm contact electrode in embodiment of the present invention two after deep-UV light-emitting two
Pole pipe structural schematic diagram.
Figure 16 show in embodiment of the present invention two two pole of deep-UV light-emitting after support chip backside deposition metal electrode
Pipe structural schematic diagram.
Description of symbols: 101 be substrate, and 102 be n-contact layer, and 103 be active area, and 104 be electronic barrier layer, 105
It is the combination of p-type Ohm contact electrode or transparent conductive film and high-reflecting film for P type contact layer, 106,107 be dielectric insulating film,
108 be N-shaped Ohm contact electrode, and 109 be solder, and 110 be support chip, and 111 contact electrode for support chip, and 201 be substrate, 202
For n-contact layer, 203 be active area, and 204 be electronic barrier layer, and 205 be P type contact layer, 206 for p-type Ohm contact electrode or
The combination of transparent conductive film and high-reflecting film, 207 be solder, and 208 be support chip, and 209 be N-shaped Ohm contact electrode, and 210 be support
Piece contacts electrode.
Specific embodiment
In view of deficiency in the prior art, inventor is studied for a long period of time and is largely practiced, and is able to propose of the invention
Technical solution.Explanation will be further explained to the technical solution, its implementation process and principle etc. as follows.But it should manage
Solution, within the scope of the present invention, above-mentioned each technical characteristic of the invention and specifically described in below (e.g. embodiment) each technology
It can be combined with each other between feature, to form a new or preferred technical solution.As space is limited, no longer tire out one by one herein
It states.
A kind of III-V nitride deep-UV light-emitting diode structure that the one aspect of the embodiment of the present invention provides includes
N-contact layer, active area, electronic barrier layer and the P type contact layer set gradually, the n-contact layer, P type contact layer difference
With n-type electrode, p-type electricity
Pole electrical connection, wherein the light-emitting surface positioned at the side the light emitting diode construction n isNitrogen face, and it is describedThe micro-nano structure for taking light to enhance is formed on nitrogen face.
Further, the n-contact layer and the opposite facing side surface of active area are describedNitrogen face.
Further, the micro-nano structure for taking light to enhance is micro- comprising saw tooth like microstructures, triangle micro-structure, nano-pillar
Any one in structure, trapezoid micro-structure, inversed trapezoid micro-structure, yurt shape micro-structure, micro-nano porous microstructure etc. or two
Kind or more combination, and it is without being limited thereto.
Further, the n-contact layer, P type contact layer form Ohmic contact with n-type electrode, p-type electrode respectively.
Further, the p-type electrode includes p-type contact electrode or transparent conductive film, the p-type electrode and p-type contact
Layer forms Ohmic contact.
Further, the p-type contact electrode whole face is deposited in P type contact layer, and the p-type contact electrode is adopted
With the metal electrode of high reflectance.
The material of the metal electrode includes any one or two in the materials such as Ni, Al, Ag, Pd, Pt, Au, TiN, Rh
Kind or more combination, and it is without being limited thereto.
Further, high-reflecting film is also covered in the transparent conductive film.
Further, the transparent conductive film whole face is covered in P type contact layer.
Further, the material of the transparent conductive film includes appointing in the materials such as AZO, IGZO, ITO, ZnO and MgO
Meaning a combination of one or more, and it is without being limited thereto.
Further, the material of the high-reflecting film includes Ag, Al, ZnO, MgO, SiO2、SiNx、TiO2、ZrO2、AlN、
Al2O3、Ta2O5、HfO2、HfSiO4, any one or two or more combinations in the materials such as AlON, and it is without being limited thereto.
Further, the side p of the light emitting diode construction is bonded with support chip.
Further, the support chip includes silicon substrate, copper support chip, molybdenum copper support chip, molybdenum support chip, ceramic base
Any one in plate, aluminium nitride, diamond etc. or two or more combinations, and it is without being limited thereto.
Further, metal bonding or nonmetallic bonding are included.Wherein, the material of the metal bonding use includes
Any one in AuSn, NiSn, AuAu, NiGe or two or more combinations, and it is without being limited thereto.
Wherein, the nonmetallic bonding includes organic matter bonding and/or oxide bond, and without being limited thereto.
Further, perforation structure is also formed in the light emitting diode construction, the perforation structure shines from described
The side p of diode structure extends to n-contact layer, the n-type electrode be set in the perforation structure and with n-contact layer shape
At Ohmic contact.
Further, also divide between the n-type electrode and active area, electronic barrier layer, P type contact layer and p-type electrode
It is furnished with dielectric.
Further, the dielectric includes SiO2、SiNx、SiON、Al2O3、AlON、SiAlON、TiO2、Ta2O5
And ZrO2Any one in equal materials or two or more combinations, and it is without being limited thereto.
The III-V nitride deep-UV light-emitting diode structure that present invention proposes has efficiency of light extraction high
The characteristics of, the output power of deep-UV light-emitting diode can be substantially improved.Specifically, the present invention will based on SiC substrate or
Large scale, low cost S i substrate epitaxial growth deep-UV light-emitting diode epitaxial thin film material back bonding on support chip,
Then Si substrate or SiC substrate and buffer layer are removed, finally in nitride materialIt is micro- that nitrogen wheat flour takes light to enhance
Micro-nano structure, to improve the extraction efficiency of deep ultraviolet light.The present invention also proposes to make N-shaped Europe by perforation structure (Via structure)
Nurse contacts electrode, avoidsLight absorption caused by n-type electrode and light scattering are made in the n-contact layer of nitrogen face, with into one
Step improves the efficiency of light extraction of deep-UV light-emitting diode.In addition, growing deep-UV light-emitting diode using Si substrate or SiC substrate
Structure can regulate and control the stress in deep-UV light-emitting diode by regulating and controlling AlN/AlGaN stress control layer；Production takes light to increase
Strong micro-nano structure can also regulate and control stress.Pass through the stress in regulation deep-UV light-emitting diode, thus it is possible to vary Quantum Well energy
The efficiency of light extraction of device is substantially improved to enhance the ratio of TE mode light in deep-UV light-emitting diode in band, promotes deep ultraviolet
The output power of light emitting diode.
The III-V nitride deep-UV light-emitting diode structure thermal resistance that present invention proposes is small, Ke Yi great
Width reduces junction temperature when device work, promotes the Performance And Reliability of deep-UV light-emitting diode.Further speaking, the present invention will
Deep-UV light-emitting diode structure is prepared using Si substrate or SiC substrate, then by bonding techniques, by two pole of deep-UV light-emitting
Pipe is flip-chip bonded on heat sink, and the biggish p-type layer whole face of resistance is directly connected to heat sink, the heat generated in active area and p-type layer
Amount will be directly transferred in heat sink, and without passing through the substrate of n-contact layer and about 100 μ m-thick lower thermal conductivities, therefore the present invention mentions
Deep-UV light-emitting diode thermal resistance very little out.
The III-V nitride deep-UV light-emitting diode structure that present invention proposes has etching injury small
The advantages that good with stability, the reliability of deep-UV light-emitting diode can be substantially improved.For example, the present invention will be rotten using wet process
The epitaxial layer of micro-nano structure and isolation deep-UV light-emitting diode that erosion preparation takes light to enhance, avoids dry etching to device
Influence, to improve the stability and reliability of deep-UV light-emitting diode.
In short, III-V nitride deep-UV light-emitting diode structure proposed by the present invention has efficiency of light extraction height, thermal resistance
Small, the advantages that junction temperature is low and stability is good, it can substantially enhance output power and the service life of deep-UV light-emitting diode.
A kind of III-V nitride deep-UV light-emitting diode structure that the other side of the embodiment of the present invention provides
Production method includes: the step of growth forms the epitaxial structure of light emitting diode on substrate, and the epitaxial structure includes successively
N-contact layer, active area, electronic barrier layer and P type contact layer formed on a substrate, and
The step of making the n-type electrode being electrically connected respectively with n-contact layer, P type contact layer, p-type electrode；
Characterized by further comprising:
The micro-nano structure for taking light to enhance described in processing formation on the light-emitting surface for being located at the side the light emitting diode construction n
Step, the light-emitting surface areNitrogen face.
Further, the substrate is selected from Si substrate or SiC substrate.Different from Sapphire Substrate, Si substrate and SiC
Substrate can absorb deep ultraviolet light, if substrate does not remove the output power that can seriously affect deep-UV light-emitting diode, and SiC is served as a contrast
The price at bottom is very expensive, therefore in the processing procedure of existing deep-UV light-emitting diode structure, does not take into account that generally using this
Class substrate.But inventor studied for a long period of time and many experiments after have been surprisingly found that, if being used in manufacture craft of the invention
On the one hand Si substrate or SiC substrate can form the epitaxial layer of high quality on such substrates, promote deep-UV light-emitting diode
Efficiency of light extraction and output power, on the other hand such substrate is also easy to epitaxial layer removing, can be removed by wet etching, into
And film deep-UV light-emitting diode structure is achieved.Postscript, as it was noted above, using such substrate growth deep ultraviolet
Light emitting diode construction can regulate and control the stress in deep-UV light-emitting diode by regulation AlN/AlGaN stress control layer,
And then can change Quantum Well energy band, to enhance the ratio of TE mode light in deep-UV light-emitting diode, device is substantially improved
Efficiency of light extraction, promote the output power of deep-UV light-emitting diode.
Further, the p-type electrode includes p-type contact electrode or transparent conductive film, the p-type electrode and p-type contact
Layer forms Ohmic contact.
Further, the p-type contact electrode whole face is deposited in P type contact layer.Further, the p-type contact
Electrode is connect by solder with heat sink whole face.And for existing Sapphire Substrate deep-UV light-emitting diode, due to difficulty
To remove Sapphire Substrate, therefore most of chips use flip-chip packaged, but chip still uses traditional same side electrode structure,
N lateral electrode solder and P lateral electrode solder need to be isolated in welding process, and need to guarantee being electrically connected for N lateral electrode and P lateral electrode
Etc., therefore P lateral electrode and N lateral electrode are only contacted with solder small area, this packaged type is very easy to generate electric leakage,
Cause component failure, it is often more important that, since contact area is smaller, the heat dissipation area of sapphire deep-UV light-emitting diode compared with
Small, thermal resistance is larger.It is different from existing Sapphire Substrate deep-UV light-emitting diode, deep-UV light-emitting diode proposed by the present invention
Structure is contacted using electrode with heat sink whole face, and heat dissipation area is very big, and device thermal resistance is very low, and the property of device can be substantially improved
Can, promote the output power of deep-UV light-emitting diode.
Further, the p-type contact electrode uses the metal electrode of high reflectance.
Further, the material of the metal electrode includes appointing in the materials such as Ni, Al, Ag, Pd, Pt, Au, TiN, Rh
Meaning a combination of one or more, and it is without being limited thereto.
Further, high-reflecting film is also covered in the transparent conductive film.
Further, the transparent conductive film whole face is covered in P type contact layer.
Further, the material of the transparent conductive film includes any one in AZO, IGZO, ITO, ZnO and MgO
Or two or more combinations, and it is without being limited thereto.
Further, the material of the high-reflecting film includes Ag, Al, ZnO, MgO, SiO2、SiNx、TiO2、ZrO2、AlN、
Al2O3、Ta2O5、HfO2、HfSiO4, any one or two or more combinations in AlON, and it is without being limited thereto.
Further, the production method further include: at least using dry etching, wet etching, electrochemical corrosion or
Any one mode is described in the electrochemical corrosion of light auxiliaryThe micro-nano for taking light to enhance described in processing formation on nitrogen face
Structure, it is describedNitrogen face is the n-contact layer and the opposite facing side surface of active area.As a comparison, existing blue precious
Stone lining bottom deep-UV light-emitting diode is all made of flip-chip packaged, sapphire of the light from about 100 μ m-thicks since substrate is difficult to remove
Substrate outgoing, Sapphire Substrate is very hard, not easy to be processed, even if using dry etching processing and fabricating roughening etc., due to sapphire
Substrate is thicker, and the figure of roughening is very remote from luminescent active region, poor to the dispersion effect of light, cannot effectively promote deep ultraviolet
The efficiency of light extraction of light emitting diode.It is different from existing Sapphire Substrate deep-UV light-emitting diode, deep ultraviolet proposed by the present invention
Light emitting diode construction substrate is very easy to removing, after substrate removal, as nitride materialNitrogen face,Nitrogen face
Material is very easy to processing, can make the micro-nano structure for taking light to enhance by the above method, the micro-nano structure for taking light to enhance is from amount
Sub- trap active area is very close, only 1-2 μm, therefore this micro-nano structure for taking light to enhance can be substantially improved device take light efficiency
Rate promotes the output power of deep-UV light-emitting diode.
Further, the micro-nano structure for taking light to enhance is micro- comprising saw tooth like microstructures, triangle micro-structure, nano-pillar
Any one in structure, trapezoid micro-structure, inversed trapezoid micro-structure, yurt shape micro-structure, micro-nano porous microstructure etc. or two
Kind or more combination, and it is without being limited thereto.
Further, the production method, which may also include that, at least realizes the diode junction using wet etching mode
The isolation of the epitaxial structure of structure.The surface that usual epitaxial growth comes out is (0001) gallium face, and there is very strong chemical stability in gallium face,
The isolation that diode epitaxial structure can not be carried out by wet etching, can only be isolated, dry etching is usual by dry etching
Surface state, damage and defect can be introduced, these surface states, damage and defect can not only become non-radiative recombination center, influence depth
The efficiency of UV LED；It will also become leak channel, influence the reliability and stability of device.As a comparison, Lan Bao
The deep-UV light-emitting diode at stone lining bottom not can be carried out substrate desquamation, therefore can not be fromNitrogen face carry out wet etching come every
The micro-nano structure for taking light to enhance from epitaxial layer or preparation.It is different from existing Sapphire Substrate deep-UV light-emitting diode, this hair
The deep-UV light-emitting diode structured substrate of bright proposition is very easy to removing, after substrate removal, as nitride material
Nitrogen face,Nitrogen plane materiel material chemical stability is good, is very easy to processing, can carry out epitaxial layer isolation or system by the above method
The micro-nano structure for taking light to enhance.
Further, the corrosion reagent that the wet etching uses includes alkalinity or acid solution.
Wherein the alkaline solution includes but is not limited to KOH, NaOH, TMAH or (NH4)2Any one in S etc. or two kinds
Above combination.
Wherein, the acid solution includes but is not limited to H3PO4, HF or HNO3In any one or it is two or more
Combination.
Further, the production method may also include that
At least make perforation structure in the epitaxial structure, the perforation structure is from the light emitting diode construction
The side p extends to n-contact layer,
And n-type electrode is made in the perforation structure, and n-type electrode and n-contact layer is made to form Ohmic contact.
Further, also divide between the n-type electrode and active area, electronic barrier layer, P type contact layer and p-type electrode
It is furnished with dielectric.
Further, the production method further include: be bonded the side p of the light emitting diode construction with support chip.
Further, the support chip includes silicon substrate, copper support chip, molybdenum copper support chip, molybdenum support chip, ceramic base
Any one in the materials such as plate, aluminium nitride, diamond or two or more combinations, and it is without being limited thereto.
Further, the bonding includes metal bonding or nonmetallic bonding.
Further, the material that the metal bonding uses includes appointing in the materials such as AuSn, NiSn, AuAu, NiGe
Meaning a combination of one or more, and it is without being limited thereto.
Further, the nonmetallic bonding includes organic matter bonding and/or oxide bond, and without being limited thereto.
Further, the production method may also include that at least using thinned, grinding, dry etching or wet etching
In any method remove the substrate or the substrate and buffer layer formed on substrate.
Further, the production method may also include the step that support chip is thinned.
Further, the production method may additionally include support chip with the opposite facing side of the epitaxial structure
The step of surface deposit metal electrodes.
In one of the embodiment of the present invention more specific embodiment, a kind of III-V nitride deep-UV light-emitting
The production method of diode structure includes the following steps:
The growing nitride deep-UV light-emitting diode structure on Si substrate or SiC substrate, specifically include n-contact layer,
Active area, electronic barrier layer and P type contact layer, as shown in Figure 1.
Clean epitaxial wafer, whole face depositing p-type metal ohmic contact or transparent conductive film and high-reflecting film in P type contact layer
Combination, and carry out Ohmic contact annealing, to form preferable Ohmic contact, as shown in Figure 2.
Metal carries out photoetching in p-type Ohmic contact, forms perforation structure (Via structure) by etching technics, the depth in hole
Degree reaches n-contact layer, is used to form N-shaped Ohmic contact, as shown in Figure 3.
Dielectric insulating film is deposited on epitaxial wafer surface, then by lithography and etching technique, exposes the N-shaped Europe of hole bottom
Nurse contact layer, as shown in Figure 4.
In epitaxial wafer surface depositing n-type metal ohmic contact, to form N-shaped Ohmic contact, as shown in Figure 5.
By epitaxial wafer back bonding on support chip, the p of deep-UV light-emitting diode is bonded with support chip down.
Using the methods of thinned, grinding, dry etching or wet etching removal Si substrate or SiC substrate and buffer layer, such as
Shown in Fig. 6.
?On the N-shaped ohmic contact layer of nitrogen face, assisted using dry etching, wet etching, electrochemical corrosion or light
Electrochemical corrosion technology in any one or two or more combinations, the micro-nano structure that preparation takes light to enhance takes light to enhance
Micro-nano structure can be zigzag, triangle, nanometer rod structure, trapezoidal, inverted trapezoidal, Mongolian pack arrangement, micro-nano porous structure etc.
Deng as shown in Fig. 7 a, Fig. 7 b, Fig. 7 c, Fig. 7 d, Fig. 7 e, Fig. 7 f, Fig. 7 g, Fig. 7 h.Specifically, wherein taking light to enhance in Fig. 7 a
Micro-nano structure be nano-pillar, the micro-nano structure for taking in Fig. 7 b light to enhance is zigzag, the micro-nano structure for taking light to enhance in Fig. 7 c
For trapezoid, the micro-nano structure for taking light to enhance in Fig. 7 d is inverted trapezoidal, and the micro-nano structure for taking light to enhance in Fig. 7 e is trapezoid,
The dimension of picture of middle trapezoid is larger, and partially n-type contact layer residual thickness is relatively thin or has corroded, and light is taken to enhance in Fig. 7 f
Micro-nano structure is inverted trapezoidal, and wherein n-contact layer residual thickness is relatively thin or has corroded, the micro-nano knot for taking light to enhance in Fig. 7 g
Structure is Mongolian pack arrangement, and the micro-nano structure for taking light to enhance in Fig. 7 h is micro-nano porous structure.
The photoetching in n-contact layer forms the figure of one single chip, then uses wet etching or dry etching, corrosion
Or p-type Ohm contact electrode is etched into, as shown in Figure 8.
Support chip is thinned, in the backside deposition metal electrode of support chip, as shown in Figure 9.
Die separation is carried out, single deep-UV light-emitting diode tube core is formed.
In one of the embodiment of the present invention more specific embodiment, another dark purple outgoing of III-V nitride
The production method of optical diode structure may include steps of:
The growing nitride deep-UV light-emitting diode structure on Si substrate or SiC substrate, specifically include n-contact layer,
Active area, electronic barrier layer and P type contact layer, as shown in Figure 10.
Clean epitaxial wafer, whole face depositing p-type metal ohmic contact or transparent conductive film and high-reflecting film in P type contact layer
Combination, and carry out Ohmic contact annealing, to form preferable Ohmic contact, as shown in figure 11.
By epitaxial wafer back bonding on support chip, the p of deep-UV light-emitting diode is bonded with support chip down.
Using the methods of thinned, grinding, dry etching or wet etching removal Si substrate or SiC substrate and buffer layer, such as
Shown in Figure 12.
?On the N-shaped ohmic contact layer of nitrogen face, assisted using dry etching, wet etching, electrochemical corrosion or light
Electrochemical corrosion technology in any one or two or more combinations, the micro-nano structure that preparation takes light to enhance takes light to enhance
Micro-nano structure can be zigzag, triangle, nanometer rod structure, trapezoidal, inverted trapezoidal, Mongolian pack arrangement, micro-nano porous structure etc.
Deng as shown in Figure 13 a, Figure 13 b, Figure 13 c, Figure 13 d, Figure 13 e, Figure 13 f.In particular, it is micro- wherein to take light to enhance in Figure 13 a
Micro-nano structure is nano-pillar, and the micro-nano structure for taking light to enhance in Figure 13 b is zigzag, and the micro-nano structure for taking light to enhance in Figure 13 c is
Trapezoid, the micro-nano structure for taking in Figure 13 d light to enhance are inverted trapezoidal, and the micro-nano structure for taking light to enhance in Figure 13 e is Mongolian inclusion
Structure, the micro-nano structure for taking in Figure 13 f light to enhance are micro-nano porous structure.
In epitaxial wafer surface portion area deposition N-shaped metal ohmic contact, to form N-shaped Ohmic contact, as shown in figure 14.
The photoetching in n-contact layer forms the figure of one single chip, then uses wet etching or dry etching, corrosion
Or p-type Ohm contact electrode is etched into, support chip is then thinned, as shown in figure 14；Or thinned support chip, at the back side of support chip
Deposit metal electrodes, as shown in figure 15.
Die separation is carried out, single deep-UV light-emitting diode tube core is formed.
In the manufacture craft that the above embodiment of the present invention is addressed, by using SiC substrate or large scale, low cost
Si substrate epitaxial growth prepares deep-UV light-emitting diode structure, and then by bonding techniques, deep-UV light-emitting diode is fallen
Dress be bonded to high heat conductance it is heat sink on, then by being thinned, grinding, the techniques such as dry etching or wet etching remove Si substrate
Or SiC substrate, in nitride materialNitrogen wheat flour make it is special take light to enhance micro-nano structure, to improve deep-UV light-emitting
The efficiency of light extraction of diode.
It is dark purple by using Si substrate or SiC substrate growth in the manufacture craft that the above embodiment of the present invention is addressed
UV light-emitting diode structure can also establish compression, change the valence of Quantum Well by regulating and controlling AlN/AlGaN stress control layer
Band structure enhances the ratio of TE mode light in deep-UV light-emitting diode, to mention under the premise of guaranteeing identical emission wavelength
Rise the efficiency of light extraction of device.In the manufacture craft that the above embodiment of the present invention is addressed, by nitride material
Nitrogen wheat flour makees the special stress for taking light enhancing micro-nano structure that can also regulate and control in deep-UV light-emitting diode, to increase dark purple
The ratio of TE mode light in UV light-emitting diode, promotes the efficiency of light extraction of device.
In the manufacture craft that the above embodiment of the present invention is addressed, p-type Ohmic contact is in deep-UV light-emitting diode
Whole face contact, metal ohmic contact are connect by solder with heat sink whole face, the heat that can will be generated in the biggish p-type layer of resistance
Be directly transferred to high heat conductance it is heat sink in, thus substantially reduce deep-UV light-emitting diode thermal resistance, reduce device junction temperature, mention
Rise device reliability.
In the manufacture craft that the above embodiment of the present invention is addressed, the present invention will be taken using the preparation of the technologies such as wet etching
The micro-nano structure of light enhancing and the epitaxial layer of isolation deep-UV light-emitting diode promote device to reduce the etching injury of device
Reliability and stability.
Technical solution of the present invention is made to illustrate in more detail below in conjunction with several embodiments:
1 the present embodiment of embodiment is related to a kind of manufacture craft of Si substrate 320nm (emission wavelength) UV LED,
It includes the following steps:
S1: growing nitride deep-UV light-emitting diode structure on a si substrate specifically includes 1000nm n-
Al0.3Ga0.7N contact layer, 6 couples of Al0.15Ga0.85N/Al0.25Ga0.75N multiple quantum wells, wherein every layer of Al0.15Ga0.85N Quantum Well
2nm, every layer of Al0.25Ga0.75N quantum builds 10nm, the p-Al of 20nm0.4Ga0.6N electronic barrier layer, 100nm p-Al0.3Ga0.7N connects
Contact layer.The structure of device can be shown refering to fig. 1 at this time.
S2: epitaxial wafer is cleaned using acetone, alcohol, hydrochloric acid and deionized water etc., is sequentially depositing on p-AlGaN contact layer
AZO and 8 pair of optical thickness of 200nm is the SiO of 1/4 wavelength2/TiO2, and using quick anneal oven in compressed air atmosphere
500 DEG C are annealed 3 minutes, to form preferable Ohmic contact.The structure of device can be refering to shown in Fig. 2 at this time.
S3: in SiO2/TiO2Photoetching is carried out on high-reflecting film, and perforation structure (Via structure) is formed by etching technics, hole
Depth reaches N-shaped AlGaN contact layer, is used to form N-shaped Ohmic contact.The structure of device can be refering to shown in Fig. 3 at this time.
S4: in the SiO of epitaxial wafer surface deposition 200nm2Then dielectric insulating film passes through lithography and etching technique, exposure
Portal the N-shaped AlGaN ohmic contact layer of bottom.The structure of device can be refering to shown in Fig. 4 at this time.
S5: 50nm Cr/300nm Au is deposited on epitaxial wafer surface, forms N-shaped Ohmic contact.The structure of device can at this time
Refering to shown in Fig. 5.
S6: the p of deep-UV light-emitting diode is face-down, together with Si support chip back bonding.
S7: it using the methods of thinned, grinding, dry etching or wet etching removal Si substrate and buffer layer, leaves N-shaped and connects
Contact layer.The structure of device can be refering to shown in Fig. 6 at this time.
S8:On the N-shaped AlGaN contact layer of nitrogen face, using hot phosphoric acid H3PO4The micro-nano that solution preparation takes light to enhance
Structure, the micro-nano structure for taking light to enhance can be zigzag, triangle, nanometer rod structure, trapezoidal, inverted trapezoidal, Mongolian pack arrangement
Etc., as shown in Fig. 7 a, 7b, 7c, 7d, 7e, 7f, 7g；Oxalic acid solution can also be used, electrochemical corrosion is carried out, preparation takes light
The micro-nano porous structure of enhancing, as shown in Fig. 7 h.
S9: the photoetching on N-shaped AlGaN contact layer forms the figure of one single chip, and it is rotten then to carry out wet process using hot phosphoric acid
Erosion, erodes to p-type Ohm contact electrode, support chip is then thinned, as shown in Figure 8；Or thinned support chip, at the back side of support chip
Deposit metal electrodes 30nmGe/100nmAu, as shown in Figure 9.
S10: die separation is carried out, single deep-UV light-emitting diode tube core is formed.
2 the present embodiment of embodiment is related to a kind of production side of SiC substrate 280nm (emission wavelength) UV LED
Method includes the following steps:
S1: growing nitride deep-UV light-emitting diode structure on sic substrates specifically includes 2000nm n-
Al0.65Ga0.35N contact layer, 8 couples of Al0.45Ga0.55N/Al0.65Ga0.35N multiple quantum wells, wherein every layer of Al0.45Ga0.55N Quantum Well
2.5nm, every layer of Al0.65Ga0.35N quantum builds 8nm, the p-Al of 20nm0.9Ga0.1N electronic barrier layer, 70nm p-Al0.45Ga0.55N
Contact layer.The structure of device can be shown refering to fig. 1 at this time.
S2: epitaxial wafer is cleaned using acetone, alcohol, hydrochloric acid and deionized water etc., is sequentially depositing on p-AlGaN contact layer
The Rh of the Ni and 200nm of 3nm, and annealed 10 minutes for 550 DEG C in compressed air atmosphere using quick anneal oven, it is preferable to be formed
Ohmic contact.The structure of device can be refering to shown in Fig. 2 at this time.
S3: carrying out photoetching in p-type Ohmic contact, forms perforation structure (Via structure) by etching technics, the depth in hole
For 600nm, reaches N-shaped AlGaN contact layer, be used to form N-shaped Ohmic contact.The structure of device can be refering to shown in Fig. 3 at this time.
S4: in the SiN of epitaxial wafer surface deposition 150nmxThen dielectric insulating film passes through lithography and etching technique, exposure
Portal the N-shaped AlGaN ohmic contact layer of bottom.The structure of device can be refering to shown in Fig. 4 at this time.
S5: 50nmTi/60nm Pt/100nm Au is deposited on epitaxial wafer surface, forms N-shaped Ohmic contact.Device at this time
Structure can be refering to shown in Fig. 5.
S6: the p of deep-UV light-emitting diode is face-down, together with molybdenum copper support chip back bonding.
S7: using the methods of thinned, grinding, dry etching or wet etching removal SiC substrate and buffer layer, N-shaped is left
Contact layer.The structure of device can be refering to shown in Fig. 6 at this time.
S8:On the N-shaped AlGaN contact layer of nitrogen face, using 70 DEG C of (NH4)2The micro-nano that the preparation of S solution takes light to enhance
Structure, the micro-nano structure for taking light to enhance can be zigzag, triangle, nanometer rod structure, trapezoidal, inverted trapezoidal, Mongolian pack arrangement
Etc., as shown in Fig. 7 a, 7b, 7c, 7d, 7e, 7f, 7g；Oxalic acid solution can also be used, electrochemical corrosion is carried out, preparation takes light
The micro-nano porous structure of enhancing, as shown in Fig. 7 h.
S9: the photoetching on N-shaped AlGaN contact layer forms the figure of one single chip, then using 85 DEG C KOH solution into
Row wet etching erodes to p-type Ohm contact electrode, support chip is then thinned, as shown in Figure 8；Or thinned support chip, it is supporting
The backside deposition metal electrode 50nm Ti/100nmAu of piece.The structure of device can be refering to shown in Fig. 9 at this time.
S10: die separation is carried out, single deep-UV light-emitting diode tube core is formed.
3 the present embodiment of embodiment is related to a kind of production side of SiC substrate 222nm (emission wavelength) UV LED
Method includes the following steps:
S1: growing nitride deep-UV light-emitting diode structure on sic substrates specifically includes 1200nm n-
Al0.9Ga0.1N contact layer, 8 couples of Al0.83Ga0.17N/Al0.9Ga0.1N multiple quantum wells, wherein every layer of Al0.83Ga0.17N Quantum Well
1.5nm, every layer of Al0.9Ga0.1N quantum builds 7nm, the p-Al of 20nm0.98Ga0.02N electronic barrier layer, 50nmp-Al0.89Ga0.11N connects
Contact layer.The structure of device can be with refering to fig. 1 shown in 0 at this time.
S2: epitaxial wafer is cleaned using acetone, alcohol, hydrochloric acid and deionized water etc., is sequentially depositing on p-AlGaN contact layer
The Al of 100nm, and annealed 6 minutes for 600 DEG C in nitrogen atmosphere using quick anneal oven, to form preferable Ohmic contact.This
When device structure can be with refering to fig. 1 shown in 1.
S3: the p of deep-UV light-emitting diode is face-down, together with copper support chip back bonding.
S4: using the methods of thinned, grinding, dry etching or wet etching removal SiC substrate and buffer layer, N-shaped is left
Contact layer.The structure of device can be with refering to fig. 1 shown in 2 at this time.
S5:On the N-shaped AlGaN ohmic contact layer of nitrogen face, using ICP lithographic technique and TMAH wet etch techniques,
Preparation take light enhance micro-nano structure, take light enhance micro-nano structure can for zigzag, triangle, nanometer rod structure, it is trapezoidal,
Inverted trapezoidal, Mongolian pack arrangement etc., as shown in Figure 13 a, 13b, 13c, 13d, 13e；Oxalic acid solution can also be used, electrification is carried out
Corrosion is learned, preparation takes the micro-nano porous structure of light enhancing, as shown in figure 13f.
S6: 20nmTi/40nm Pt/300nm Au is deposited on epitaxial wafer surface, forms N-shaped Ohmic contact.Device at this time
Structure can be with refering to fig. 1 shown in 4.
S7: the photoetching on N-shaped AlGaN contact layer forms the figure of one single chip, then using 85 DEG C TMAH solution into
Row wet etching erodes to p-type Ohm contact electrode, and support chip is then thinned.The structure of device can be with refering to fig. 15 institutes at this time
Show；Or thinned support chip, in the backside deposition metal electrode of support chip.The structure of device can be with refering to fig. 1 shown in 6 at this time.
S8: die separation is carried out, single deep-UV light-emitting diode tube core is formed.
In addition, inventor also substitutes previous embodiment with the other materials addressed in this specification and process conditions etc.
Respective material and process conditions in 1-3 have produced deep-UV light-emitting diode, and are tested to its performance, and find this
These deep-UV light-emitting diodes that inventive embodiments are obtained all have efficiency of light extraction is high, thermal resistance is low, junction temperature is low, and stability is good etc.
Advantage, device performance and service life, which also have, to be significantly improved.
It should be appreciated that the technical concepts and features of above-described embodiment only to illustrate the invention, its object is to allow be familiar with this
The personage of item technology cans understand the content of the present invention and implement it accordingly, and it is not intended to limit the scope of the present invention.It is all
Equivalent change or modification made by Spirit Essence according to the present invention, should be covered by the protection scope of the present invention.
Claims (10)
1. a kind of III-V nitride deep-UV light-emitting diode structure, including set gradually n-contact layer, active area, electricity
Sub- barrier layer and P type contact layer, the n-contact layer, P type contact layer are electrically connected with n-type electrode, p-type electrode respectively, feature
It is: is positioned at the light-emitting surface of the side the light emitting diode construction nNitrogen face, and it is describedIt is formed on nitrogen face and takes light
The micro-nano structure of enhancing.
2. III-V nitride deep-UV light-emitting diode structure according to claim 1, it is characterised in that: the N-shaped
Contact layer and the opposite facing side surface of active area are describedNitrogen face；And/or the micro-nano structure for taking light to enhance
It is micro- comprising saw tooth like microstructures, triangle micro-structure, nano-pillar micro-structure, trapezoid micro-structure, inversed trapezoid micro-structure, yurt shape
Any one in structure, micro-nano porous microstructure or two or more combinations.
3. III-V nitride deep-UV light-emitting diode structure according to claim 1, it is characterised in that: the N-shaped
Contact layer, P type contact layer form Ohmic contact with n-type electrode, p-type electrode respectively；Preferably, the p-type electrode includes that p-type connects
Touched electrode or transparent conductive film, the p-type electrode and P type contact layer form Ohmic contact；It is furthermore preferred that the p-type contact electricity
Pole whole face is deposited in P type contact layer, and the p-type contact electrode uses the metal electrode of high reflectance；Alternatively, described
High-reflecting film is also covered on bright conductive film；It is furthermore preferred that the transparent conductive film whole face is covered in P type contact layer；More preferably
, the material of the metal electrode includes any one or two or more groups in Ni, Al, Ag, Pd, Pt, Au, TiN, Rh
It closes；It is furthermore preferred that the material of the transparent conductive film include any one or two kinds in AZO, IGZO, ITO, ZnO and MgO with
On combination；It is furthermore preferred that the material of the high-reflecting film includes Ag, Al, ZnO, MgO, SiO2、SiNx、TiO2、ZrO2、AlN、
Al2O3、Ta2O5、HfO2、HfSiO4, any one or two or more combinations in AlON.
4. III-V nitride deep-UV light-emitting diode structure according to claim 1, it is characterised in that: the hair
The side p of optical diode structure is bonded with support chip；Preferably, the support chip includes silicon substrate, copper support chip, the support of molybdenum copper
Piece, molybdenum support chip, ceramic substrate, aluminium nitride, any one or two or more combinations in diamond；Preferably, described
Bonding includes metal bonding or nonmetallic bonding, and the material that the metal bonding uses includes in AuSn, NiSn, AuAu, NiGe
Any one or two or more combinations, the nonmetallic bonding includes organic matter bonding and/or oxide bond.
5. III-V nitride deep-UV light-emitting diode structure according to claim 1, it is characterised in that: the hair
Perforation structure is also formed in optical diode structure, the perforation structure extends to N-shaped from the side p of the light emitting diode construction
Contact layer, the n-type electrode are set in the perforation structure and form Ohmic contact with n-contact layer；Preferably, the n
Dielectric is also distributed between type electrode and active area, electronic barrier layer, P type contact layer and p-type electrode；It is furthermore preferred that institute
Stating dielectric includes SiO2、SiNx、SiON、Al2O3、AlON、SiAlON、TiO2、Ta2O5And ZrO2It is any one in equal materials
Kind or two or more combinations.
6. a kind of production method of III-V nitride deep-UV light-emitting diode structure, comprising:
Growth the step of forming the epitaxial structure of light emitting diode on substrate, the epitaxial structure include successively shape on substrate
At n-contact layer, active area, electronic barrier layer and P type contact layer, and
The step of making the n-type electrode being electrically connected respectively with n-contact layer, P type contact layer, p-type electrode；
Characterized by further comprising:
The step for the micro-nano structure for taking light to enhance described in processing formation on the light-emitting surface for being located at the side the light emitting diode construction n
Suddenly, the light-emitting surface isNitrogen face.
7. production method according to claim 6, it is characterised in that: the micro-nano structure for taking light to enhance includes zigzag
Micro-structure, triangle micro-structure, nano-pillar micro-structure, trapezoid micro-structure, inversed trapezoid micro-structure, yurt shape micro-structure, micro-nano
Any one in porous microstructure or two or more combinations；And/or the substrate is selected from Si substrate or SiC substrate；With/
Or, the p-type electrode includes p-type contact electrode or transparent conductive film, the p-type electrode and P type contact layer form Ohmic contact；
Preferably, the p-type contact electrode whole face is deposited in P type contact layer, and the p-type contact electrode is using high reflectance
Metal electrode；Alternatively, being also covered with high-reflecting film in the transparent conductive film；It is furthermore preferred that the material of the metal electrode includes
Any one in Ni, Al, Ag, Pd, Pt, Au, TiN, Rh or two or more combinations；It is furthermore preferred that the transparent conductive film
Material include any one or two or more combinations in AZO, IGZO, ITO, ZnO and MgO；It is furthermore preferred that described high anti-
The material of film includes Ag, Al, ZnO, MgO, SiO2、SiNx、TiO2、ZrO2、AlN、Al2O3、Ta2O5、HfO2、HfSiO4, in AlON
Any one or two or more combinations.
8. production method according to claim 6, it is characterised in that further include: at least using dry etching, wet etching,
Any one mode is described in electrochemical corrosion or the electrochemical corrosion of light auxiliaryDescribed in processing is formed on nitrogen face
The micro-nano structure for taking light to enhance, it is describedNitrogen face is the n-contact layer and the opposite facing side surface of active area；With/
Or, at least realizing the isolation of the epitaxial structure of the diode structure using wet etching mode；Preferably, the wet etching
The corrosion reagent of use includes alkalinity or acid solution, wherein the alkaline solution includes KOH, NaOH, TMAH or (NH4)2In S
Any one or two or more combinations, the acid solution include H3PO4, HF or HNO3In any one or two kinds with
On combination.
9. production method according to claim 6, it is characterised in that further include: at least made in the epitaxial structure
Perforation structure, the perforation structure extend to n-contact layer from the side p of the light emitting diode construction, and, in the perforation
N-type electrode is made in structure, and n-type electrode and n-contact layer is made to form Ohmic contact；
Preferably, insulation is also distributed between the n-type electrode and active area, electronic barrier layer, P type contact layer and p-type electrode
Medium；It is furthermore preferred that the dielectric includes SiO2、SiNx、SiON、Al2O3、AlON、SiAlON、TiO2、Ta2O5And ZrO2
Any one in equal materials or two or more combinations.
10. production method according to claim 6, it is characterised in that further include: by the side p of the light emitting diode construction
It is bonded with support chip；Preferably, the support chip includes silicon substrate, copper support chip, molybdenum copper support chip, molybdenum support chip, ceramic base
Plate, aluminium nitride, any one or two or more combinations in diamond；Preferably, the bonding include metal bonding or
Nonmetallic bonding, the material that the metal bonding uses include any one or two kinds in AuSn, NiSn, AuAu, NiGe with
On combination, the nonmetallic bonding include organic matter bonding and/or oxide bond；It is furthermore preferred that the production method
Further include: use any one in thinned, grinding, dry etching or wet etching or the two or more combinations removal substrate
Or the substrate and buffer layer formed on substrate；It is furthermore preferred that the production method further includes that support chip is thinned
Step；It is furthermore preferred that the production method further includes in the heavy with the opposite facing side surface of the epitaxial structure of support chip
The step of product metal electrode.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112563381A (en) * | 2020-12-29 | 2021-03-26 | 中国科学院长春光学精密机械与物理研究所 | Deep ultraviolet light-emitting diode with low ohmic contact resistance and preparation method thereof |
| CN114335271A (en) * | 2021-12-27 | 2022-04-12 | 江西兆驰半导体有限公司 | Light-emitting diode manufacturing method and light-emitting diode |
| CN114335271B (en) * | 2021-12-27 | 2024-04-30 | 江西兆驰半导体有限公司 | Light-emitting diode manufacturing method and light-emitting diode thereof |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006135222A (en) * | 2004-11-09 | 2006-05-25 | Matsushita Electric Ind Co Ltd | Etching method and manufacturing method of semiconductor element |
| CN1886827A (en) * | 2003-12-09 | 2006-12-27 | 加利福尼亚大学董事会 | Highly efficient gallium nitride based light emitting diodes via surface roughening |
| CN201060874Y (en) * | 2007-06-12 | 2008-05-14 | 天津工业大学 | Power type gallium nitride based LED chip |
| CN101604721A (en) * | 2003-12-09 | 2009-12-16 | 加利福尼亚大学董事会 | Efficient (B, Al, Ga, In) N based light-emitting diode through surface coarsening |
| CN101661985A (en) * | 2009-09-18 | 2010-03-03 | 厦门市三安光电科技有限公司 | Manufacturing method of gallium nitride based LED with vertical structure |
| CN101874307A (en) * | 2007-11-30 | 2010-10-27 | 加利福尼亚大学董事会 | The light-emitting diode based on nitride of the highlight extract efficiency by surface roughening |
| CN102255010A (en) * | 2011-07-13 | 2011-11-23 | 厦门市三安光电科技有限公司 | Manufacturing method of gallium nitride light-emitting diode |
| CN102790165A (en) * | 2011-05-16 | 2012-11-21 | 株式会社东芝 | Semiconductor light emitting device |
| US20140225142A1 (en) * | 2013-02-12 | 2014-08-14 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
| CN104733577A (en) * | 2015-03-30 | 2015-06-24 | 映瑞光电科技(上海)有限公司 | LED chip of perpendicular structure and manufacturing method thereof |
| CN105762242A (en) * | 2014-12-17 | 2016-07-13 | 晶能光电（江西）有限公司 | GaN-based thin-film LED chip and preparation method thereof |
| US20170345971A1 (en) * | 2016-05-30 | 2017-11-30 | Toyoda Gose Co.,Ltd. | Method for producing a semiconductor light-emitting device |
-
2018
- 2018-01-12 CN CN201810030554.4A patent/CN110034216A/en active Pending
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1886827A (en) * | 2003-12-09 | 2006-12-27 | 加利福尼亚大学董事会 | Highly efficient gallium nitride based light emitting diodes via surface roughening |
| CN101604721A (en) * | 2003-12-09 | 2009-12-16 | 加利福尼亚大学董事会 | Efficient (B, Al, Ga, In) N based light-emitting diode through surface coarsening |
| JP2006135222A (en) * | 2004-11-09 | 2006-05-25 | Matsushita Electric Ind Co Ltd | Etching method and manufacturing method of semiconductor element |
| CN201060874Y (en) * | 2007-06-12 | 2008-05-14 | 天津工业大学 | Power type gallium nitride based LED chip |
| CN101874307A (en) * | 2007-11-30 | 2010-10-27 | 加利福尼亚大学董事会 | The light-emitting diode based on nitride of the highlight extract efficiency by surface roughening |
| CN101661985A (en) * | 2009-09-18 | 2010-03-03 | 厦门市三安光电科技有限公司 | Manufacturing method of gallium nitride based LED with vertical structure |
| CN102790165A (en) * | 2011-05-16 | 2012-11-21 | 株式会社东芝 | Semiconductor light emitting device |
| CN102255010A (en) * | 2011-07-13 | 2011-11-23 | 厦门市三安光电科技有限公司 | Manufacturing method of gallium nitride light-emitting diode |
| US20140225142A1 (en) * | 2013-02-12 | 2014-08-14 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device |
| CN105762242A (en) * | 2014-12-17 | 2016-07-13 | 晶能光电（江西）有限公司 | GaN-based thin-film LED chip and preparation method thereof |
| CN104733577A (en) * | 2015-03-30 | 2015-06-24 | 映瑞光电科技(上海)有限公司 | LED chip of perpendicular structure and manufacturing method thereof |
| US20170345971A1 (en) * | 2016-05-30 | 2017-11-30 | Toyoda Gose Co.,Ltd. | Method for producing a semiconductor light-emitting device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112563381A (en) * | 2020-12-29 | 2021-03-26 | 中国科学院长春光学精密机械与物理研究所 | Deep ultraviolet light-emitting diode with low ohmic contact resistance and preparation method thereof |
| CN112563381B (en) * | 2020-12-29 | 2022-04-05 | 中国科学院长春光学精密机械与物理研究所 | Deep ultraviolet light-emitting diode with low ohmic contact resistance and preparation method thereof |
| CN114335271A (en) * | 2021-12-27 | 2022-04-12 | 江西兆驰半导体有限公司 | Light-emitting diode manufacturing method and light-emitting diode |
| CN114335271B (en) * | 2021-12-27 | 2024-04-30 | 江西兆驰半导体有限公司 | Light-emitting diode manufacturing method and light-emitting diode thereof |
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