CN104538527A - Distributed n-face ohmic contact reversed polarity AlGaInP light emitting diode - Google Patents
Distributed n-face ohmic contact reversed polarity AlGaInP light emitting diode Download PDFInfo
- Publication number
- CN104538527A CN104538527A CN201410854300.6A CN201410854300A CN104538527A CN 104538527 A CN104538527 A CN 104538527A CN 201410854300 A CN201410854300 A CN 201410854300A CN 104538527 A CN104538527 A CN 104538527A
- Authority
- CN
- China
- Prior art keywords
- layer
- ohmic contact
- type
- thickness
- emitting diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 49
- 239000002184 metal Substances 0.000 claims abstract description 43
- 229910052751 metal Inorganic materials 0.000 claims abstract description 43
- 239000004065 semiconductor Substances 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 230000004888 barrier function Effects 0.000 claims description 11
- 239000000178 monomer Substances 0.000 claims description 11
- 238000000605 extraction Methods 0.000 abstract description 7
- 238000009413 insulation Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 description 101
- 229910052782 aluminium Inorganic materials 0.000 description 21
- 238000000034 method Methods 0.000 description 20
- 229910052759 nickel Inorganic materials 0.000 description 19
- 229910052737 gold Inorganic materials 0.000 description 16
- 229910052719 titanium Inorganic materials 0.000 description 13
- 229910052804 chromium Inorganic materials 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 12
- 229910052697 platinum Inorganic materials 0.000 description 12
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 11
- 229910052709 silver Inorganic materials 0.000 description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- 229910052790 beryllium Inorganic materials 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 7
- 230000008020 evaporation Effects 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 229910052763 palladium Inorganic materials 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 238000006424 Flood reaction Methods 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000002848 electrochemical method Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000005068 transpiration Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Disclosed is a distributed n-face ohmic contact reversed polarity AlGaInP light emitting diode. The distributed n-face ohmic contact reversed polarity AlGaInP light emitting diode sequentially comprises a p electrode, a substrate, a bonding layer, a reflector layer, an insulation layer, a p-type current expanding layer, a p-type semiconductor layer, an active light emitting region, an n-type semiconductor layer, an n-type window layer, n-type GaAs contact layers, n-type ohmic contact metal, an n electrode thickened metal layer and an n bonding pad from bottom to top. The reflector layer makes contact with the p-type current expanding layer through a hole formed in the insulation layer. The n-type GaAs contact layers are arrayed on the n-type window layer in a distributed mode. The surface of each single n-type GaAs contact layer is provided with one piece of n-type ohmic contact metal. The n electrode thickened metal layer is arranged on the surface of the n-type window layer and covers the n-type ohmic contact metal. According to the distributed n-face ohmic contact reversed polarity AlGaInP light emitting diode, the light extraction efficiency is significantly improved, the device current expanding ability is significantly improved, stress between the n-type ohmic contact metal and the n electrode thickened metal layer is released, and the LED chip light extraction efficiency and electrode firmness degree are improved.
Description
Technical field
The present invention relates to the reversed polarity AlGaInP light emitting diode construction of a kind of n face ohmic contact, belong to light-emitting diode manufacturing technology field.
Background technology
The fifties in last century, under the effort of many well-known research institution that IBM Thomas J.Watson Research Center is representative, is that the III – V race semiconductor of representative emerges rapidly in semiconductor light emitting field with GaAs.Afterwards along with the appearance of metal oxide chemical vapor deposition (MOCVD) technology, make the growth of high-quality III – V race semiconductor breach technology potential barrier, the semiconductor light emitting diode device of various wavelength floods the market in succession.Because semiconductor light-emitting-diode has the speciality such as theoretical efficiency is high, life-span length, mechanical impact relative to current luminescent device, be worldwide counted as illuminating device of new generation.But the general higher (GaP:3.2 of the refractive index due to III – V race semiconductor, GaN:2.4), this is limited by interface total reflection phenomenon with regard to the light causing the light-emitting zone of LED and send when shining in air through chip surface, only have the light of few part can shine device exterior (GaP is about 2.4%, GaN and is about 4%).Interface total reflection phenomenon causes the external quantum efficiency of LED low, is the main cause that restriction LED substitutes existing illuminating device.
The people such as Nuese in 1969 have delivered at J.Electrochem Soc.:Solid State Sci. (116) 212 method utilizing epoxy encapsulation LED chip, the external quantum efficiency of ruddiness GaAs base LED are improve 1-2 doubly.Add between GaAs material and air one deck refractive index be 1.5 epoxy resin can effectively increase cirtical angle of total reflection degree, make more light can shine LED component outside.But the method is limited for the raising of external quantum efficiency, and introduces a bed boundary more and also can cause interface Fresnel loss, the radiation aging of resin material also can cause light extraction efficiency to decline simultaneously.
1993, first the people such as Schnitzer propose to utilize the method for etching to carry out alligatoring thus the method for the external quantum efficiency of raising LED chip to semi-conducting material light output surface at Appl.Phys.Lett. (63) 2174, obtain the light extraction efficiency of 50%.The principle that surface coarsening improves LED chip light ejection efficiency is the concaveconvex structure utilizing LED light output surface, is gone out by the light scattering of total reflection angle or is guided out chip, thus increases the light ratio that can shine LED outside.After this, Windisch reports similar method at periodicals such as IEEE Trans.Electron Dev. (47) 1492 and Appl.Phys.Lett. (74) 2256 and carries out alligatoring to LED light output surface.The method of etching is utilized to be the weak point that LED light output surface carries out alligatoring: (1) etching has very large destructiveness for the carrier transport properties of semi-conducting material, and the electric property of LED is obviously reduced; (2) etching apparatus purchase and use cost abnormal high, make the cost of LED significantly increase; (3) etching is utilized to carry out the pattern of alligatoring to LED light output surface and size has no idea to control and optimize.(4) process time is longer, and production efficiency is lower.
Plauger publishes an article at J.Electrochem.Soc. (121) 1974, reports and utilizes electrochemical method, effectively corrodes GaP material.The method is the deficiency that LED light output surface carries out alligatoring: (1) needs applied voltage to assist, additionally introduces technique prepared by electrode; (2) corrosion structure obtained is unfavorable for that the light of LED extracts.
CN101656284 provides a kind of " utilizing the method for ITO particle mask alligatoring red light-emitting diode ", the method comprises the following steps: (1) utilizes the method for the metal organic chemical vapor deposition contact layer of epitaxial growth N-type successively, multi-quantum well active region and P type contact layer on substrate routinely, and substrate is GaAs material; (2) on epitaxially grown P type contact layer, use the ito thin film of electron beam transpiration thick layer 260nm; (3) epitaxial wafer being coated with ITO is immersed 1min, etch away parts ITO in concentrated hydrochloric acid, that residual is granular ITO; (4) make mask, dry etching P type contact layer with residual ITO particle, form coarse surface; (5) residual ITO is eroded with concentrated hydrochloric acid.The method needs twice evaporation ITO current extending, and cost compared with normal LED technique significantly improves.In addition, also do not avoid ICP etching technics for the destruction of the electric property of LED component.And the method needs to use concentrated hydrochloric acid, because concentrated hydrochloric acid has severe corrosive and strong volatility, certain infringement may be caused to other precision equipments and operating personnel.
CN101656285 disclosed " utilizing PS spheres as template to make the method for light-emitting diode coarse surface ", the method comprising the steps of: (1) is epitaxial growth epitaxial wafer routinely; (2) on epitaxially grown P type contact layer, lay one deck closely to be arranged the monofilm formed by PS ball; (3) with the chloride of tetraethyl orthosilicate, metal or nitrate for precursor, by the gap that is filled in after precursor, the mixing of second alcohol and water between the PS ball of monofilm and P type contact layer, room temperature leaves standstill and heat resolve is corresponding oxide; (4) epitaxial wafer is placed in carrene, dissolve with carrene and get rid of PS ball, the oxide formed in the gap between PS ball and P type contact layer is retained on P type contact layer by bowl-shape periodic arrangement structure; (5) make mask, dry etching P type contact layer with the oxide formed, form coarse surface; (6) residual oxide is eroded.The method needs to utilize PS microballoon as mask, complex steps, and cost is higher and be difficult to ensure to obtain the even alligatoring structure of larger area.
CN102148324B disclosed " a kind of LED chip with substrate condenser mirror and preparation method thereof ", comprise chip upper surface and chip lower surface, described chip lower surface is provided with the light gathering reflector lens array had playing converging action after reflected incident light, its manufacture method carries out being cut into crisscross Cutting Road in surface under the die by diamond cutting cutter or laser cutting, condenser mirror is formed between the Cutting Road of adjacent intersection, several condenser mirrors composition light gathering reflector lens array, or make several circular diaphragms under the die on the surface by photoetching, then the hybrid corrosion liquid of phosphoric acid or plasma etch apparatus is adopted to etch the region beyond diaphragm circular on chip lower surface, produce light gathering reflector lens array thus.The method is only suitable for applying in transparent substrates LED chip.
CN202423369U disclosed " light-emitting diode chip for backlight unit ", comprise: substrate, the successively stacked n type semiconductor layer be formed on the end face of substrate, multiple quantum well layer, p type semiconductor layer, transparency conducting layer, P electrode and N electrode, N electrode is formed at n type semiconductor layer and is etched on the end face in region; Also comprise a DBR layer and the 2nd DBR layer, a DBR layer is formed in the sunk area just to the through transparency conducting layer of P electrode, and the bottom surface of a DBR layer is formed on the end face of p type semiconductor layer; The bottom surface of substrate is formed with the 2nd DBR layer.This structure is only applicable to the GaN base LED component with transparent substrates, inapplicable for substrate lighttight AlGaInP base LED chip.
Summary of the invention
For the deficiency that the structure of existing light-emitting diode exists, the invention provides the reversed polarity AlGaInP light emitting diode construction of a kind of distributing n face ohmic contact, object is that the GaAs contact layer reducing Window layer top blocks and light absorption, release N-shaped metal ohmic contact and n-electrode add the stress between thick metal layers, improve light extraction efficiency and the electrode firmness of LED chip.
The reversed polarity AlGaInP light-emitting diode of distributing n face of the present invention ohmic contact, adopts following technical scheme:
This light-emitting diode, p-electrode is followed successively by top by bottom, substrate, bonded layer, mirror layer, insulating barrier, p-type current extending, p-type semiconductor layer, active light emitting area, n-type semiconductor layer, n-type window layer, N-shaped GaAs contact layer, N-shaped metal ohmic contact, n-electrode adds thick metal layers and n pad, mirror layer is contacted with p-type current extending by insulating layer perforating, N-shaped GaAs contact layer presents dispersed arrangement in n-type window layer, each monomer N-shaped GaAs contact layer surface arranges a N-shaped metal ohmic contact, n-electrode adds thick metal layers and is arranged on n-type window layer surface and is covered on N-shaped metal ohmic contact.
Described p-electrode is prepared in substrate back, can select the combination of one or more material arbitrary proportions in Au, Ge, Ni, Ti, Cr, Al, Ag, Cu, Be, Pd and Pt, and thickness is 0.5 μm-10 μm.
Described substrate selects Si, GaAs, Al
2o
3, GaP, InP, SiC, Cu, Mo or Al material; Thickness is 20 μm-300 μm;
Described bonded layer selects the combination of the homogenous material in Au, In, Sn, Ti, Pt, Al, Cr material or multiple material, and thickness is 0.2 μm-10 μm.
Described mirror layer selects the combination of one or more material arbitrary proportions in Au, Ge, Ni, Ti, Al, Ag, Cu, Cr, Be, Pd and Pt, specifically selects the ohmic contact taken into account with current extending, and thickness is 0.1 μm-10 μm.
Described insulating barrier selects SiO
2, Si
3n
4, TiO
2or Al
2o
3deng insulating material, thickness is 0.1 μm-5 μm, and open pore size is 0.5 μm-50 μm.
Described p-type current extending is p-GaP, p-AlInP, p-GaInP, p-GaAs, p-AlAS, p-AlGaAs, p-AlAsP or p-AlGaInP material, and the concentration of p-type doping is 1 × 10
18cm
-3-1 × 10
21cm
-3, thickness is 0.1 μm-10 μm; Prepared by MOCVD technology.
Described p-type semiconductor layer is p-GaP, p-AlInP, p-GaInP, p-GaAs, p-AlAS, p-AlGaAs, p-AlAsP or p-AlGaInP material, and the concentration of p-type doping is 1 × 10
17cm
-3-1 × 10
21cm
-3, thickness is 0.1 μm-10 μm.
Described active area is Multiple Quantum Well or multiheterostructure, can use the combination of one or more material arbitrary proportions in AlInP, GaInP, AlGaInP, GaAs, InGaAs, AlGaAs, AlAsP and GaAsP.
Described n-type semiconductor layer is n-GaP, n-AlInP, n-GaInP, n-GaAs, n-AlAS, n-AlGaAs, n-AlAsP or n-AlGaInP material, and the concentration of N-shaped doping is 1 × 10
17cm
-3-1 × 10
21cm
-3, thickness is 0.1 μm-10 μm.
Described n-type window layer is n-GaP, n-AlInP, n-GaInP, n-GaAs, n-AlAS, n-AlGaAs, n-AlAsP or n-AlGaInP material, and the concentration of N-shaped doping is 1 × 10
17cm
-3-1 × 10
21cm
-3, thickness is 0.1 μm-10 μm.
Described N-shaped GaAs contact layer monomer shape is rectangle, triangle or circle, and area is 1 μm
2-100 μm
2, the concentration of N-shaped doping is 1 × 10
17cm
-3-1 × 10
21cm
-3, thickness is 0.1 μm-10 μm.
The shape of described N-shaped metal ohmic contact is consistent with N-shaped GaAs contact layer with area, selects the combination of one or more material arbitrary proportions in Au, Ge, Ni, Ti, Cr, Al, Ag, Cu, Be, Pd and Pt; Thickness is 0.5 μm-10 μm;
Described n-electrode adds the combination that thick metal layers selects one or more material arbitrary proportions in Au, Ge, Ni, Ti, Cr, Al, Ag, Cu, Be, Pd and Pt, and thickness is 0.5 μm-10 μm.
Described n pad selects the combination of one or more material arbitrary proportions in Au, Ge, Ni, Ti, Cr, Al, Ag, Cu, Be, Pd and Pt, and thickness is 0.5 μm-10 μm.
The present invention has following characteristics:
1. reduce the light absorption of the n face GaAs ohmic contact layer of AlGaInP base LED Window layer, significantly promote light extraction efficiency.
2. the current expansion ability of remarkable boost device, thus embody size cost advantage and the high reliability of high-power chip.
3. release N-shaped metal ohmic contact and n-electrode add the stress between thick metal layers, improve light extraction efficiency and the electrode firmness of LED chip.
4. be easy to mutually integrated with existing production technology, cost and traditional structure chip close, possess significant superiority of effectiveness.
Accompanying drawing explanation
Fig. 1 is the structural representation of the reversed polarity AlGaInP light-emitting diode of distributing n face of the present invention ohmic contact.
Fig. 2 is the vertical view of Fig. 1.
Wherein, 1, p-electrode, 2, substrate, 3, bonded layer, 4, mirror layer, 5, insulating barrier, 6, p-type current extending, 7, p-type semiconductor layer, 8, active light emitting area, 9, n-type semiconductor layer, 10, n-type window layer, 11, N-shaped GaAs contact layer, 12, N-shaped metal ohmic contact, 13, n-electrode adds thick metal layers, and 14, n pad.
Embodiment
Embodiment 1
As depicted in figs. 1 and 2, the reversed polarity AlGaInP light-emitting diode of distributing n face of the present invention ohmic contact, is followed successively by p face electrode 1 by the structure at bottom to top, substrate 2, bonded layer 3, mirror layer 4, insulating barrier 5, p-type current extending 6, p-type semiconductor layer 7, active light emitting area 8, n-type semiconductor layer 9, n-type window layer 10, N-shaped GaAs contact layer 11, N-shaped metal ohmic contact 12, n-electrode adds thick metal layers 13 and n pad 14.
(1) p-electrode 1 is prepared in substrate 2 back side, the combination of material selection Au and Ti, uses evaporation mode preparation; Thickness is 0.5 μm;
(2) substrate 2 is Si material; Thickness is 20 μm;
(3) bonded layer 3 selects Au material, uses the mode of evaporation to prepare; Thickness is 0.2 μm;
(4) mirror layer 4, the combination of material selection Au and Be, uses evaporation mode preparation; Thickness is 0.1 μm;
(5) insulating barrier 5 selects SiO
2material, uses CVD mode to prepare; Thickness is 0.1 μm, opening diameter 0.5 μm;
(6) p-type current extending 6 is p-GaP materials prepared by MOCVD technology, and the concentration of p-type doping is 1 × 10
18cm
-3, thickness is 0.1 μm;
(7) p-type semiconductor layer 7 is p-AlInP materials prepared by MOCVD technology, and the concentration of p-type doping is 1 × 10
17cm
-3, thickness is 0.1 μm;
(8) active light emitting area 8 is multi-quantum pit structures prepared by MOCVD technology, uses the combination of AlInP, AlGaInP material;
(9) n-type semiconductor layer 9 is n-AlInP materials prepared by MOCVD technology, and the concentration of N-shaped doping is 1 × 10
17cm
-3, thickness is 0.1 μm;
(10) n-type window layer 10 is n-GaP materials prepared by MOCVD technology, and the concentration of N-shaped doping is 1 × 10
17cm
-3, thickness is 0.1 μm;
(11) N-shaped GaAs contact layer 11 is n-GaAs materials prepared by MOCVD technology, and the concentration of N-shaped doping is 1 × 10
17cm
-3, thickness is 0.1 μm, and shape is rectangle, and monomer area is 1 μm
2;
(12) N-shaped metal ohmic contact 12, use evaporation mode preparation, be positioned at N-shaped GaAs contact layer 11 top, select the combination of Au, Ge, Ni material, thickness is 0.5 μm, shape, distribution consistent with size and N-shaped GaAs contact layer;
(13) n-electrode adds thick metal layers, and 1 is prepared in n-type window layer layer surface and is covered on N-shaped metal ohmic contact, selects the combination of Cr, Al material, uses the mode of evaporation to prepare; Thickness is 0.5 μm;
(14) n pad 14, only comprises pad structure, selects the combination of Ni, Al material, uses the mode of evaporation to prepare; Thickness is 0.5 μm.
Embodiment 2
The difference of the present embodiment and embodiment 1 is:
(1) p-electrode 1 thickness is 1 μm;
(2) substrate 2 is Cu material, and thickness is 50 μm;
(3) bonded layer 3 selects Au and In combination of materials, and thickness is 1 μm;
(4) mirror layer 4 selects the combination of Ag, Ni and Al material, and thickness is 0.5 μm;
(5) insulating barrier 5 selects TiO
2material, thickness is 0.2 μm, and opening diameter is 2 μm;
(6) p-type current extending 6 is p-GaInP materials, and the concentration of p-type doping is 1 × 10
19cm
-3, thickness is 1 μm;
(7) p-type semiconductor layer 7 is p-AlGaInP materials, and the concentration of p-type doping is 1 × 10
18cm
-3, thickness is 0.3 μm;
(8) active area 8 uses the combined material of GaInP and AlGaInP;
(9) n-type semiconductor layer 9 is n-AlGaInP materials, and the concentration of N-shaped doping is 1 × 10
18cm
-3, thickness is 0.3 μm;
(10) n-type window layer 10 is n-AlGaInP materials, and the concentration of N-shaped doping is 1 × 10
18cm
-3, thickness is 0.3 μm;
(11) N-shaped GaAs contact layer 11 is n-GaAs materials, and the concentration of N-shaped doping is 1 × 10
18cm
-3, thickness is 0.2 μm, and shape is triangle, and monomer area is 5 μm
2;
(12) N-shaped metal ohmic contact 12 selects the combined material of Au, Ge and Ni, and thickness is 0.8 μm, shape, distribution consistent with size and N-shaped GaAs contact layer;
(13) n-electrode adds the combined material that thick metal layers 13 selects Ti and Al, and thickness is 0.8 μm;
(14) n pad 14 selects the combined material of Cr and Al, and thickness is 0.8 μm.
Embodiment 3
The difference of the present embodiment and embodiment 1 is:
(1) p-electrode 1 selects the combined material of Ag, Ni and Pt, and thickness is 1 μm;
(2) substrate 2 is GaAs material, and thickness is 100 μm;
(3) bonding, 3 select Al and Sn combination of materials, and thickness is 1.5 μm;
(4) mirror layer 4 selects the combination of Au and Cr material, and thickness is 1 μm;
(5) insulating barrier 5 selects Si
3n
4material, thickness is 0.5 μm, and opening diameter is 10 μm;
(6) p-type current extending 6 is p-GaAs materials, and the concentration of p-type doping is 1 × 10
20cm
-3, thickness is 2 μm;
(7) p-type semiconductor layer 7 is p-AlGaAs materials, and the concentration of p-type doping is 1 × 10
19cm
-3, thickness is 1 μm;
(8) active area 8 is the combined materials using AlGaAs and AlAs;
(9) n-type semiconductor layer 9 is n-AlGaAs materials, and the concentration of N-shaped doping is 1 × 10
19cm
-3, thickness is 2 μm;
(10) n-type window layer 10 is n-GaInP materials, and the concentration of N-shaped doping is 1 × 10
19cm
-3, thickness is 0.5 μm;
(11) N-shaped GaAs contact layer 11 is n-GaAs materials, and the concentration of N-shaped doping is 1 × 10
19cm
-3, thickness is 0.3 μm, and shape is circle, and monomer area is 10 μm
2;
(12) N-shaped metal ohmic contact 12 selects the combination of Al, Ti and Ni material, and thickness is 1.0 μm, shape, distribution consistent with size and N-shaped GaAs contact layer;
(13) n-electrode adds the combination that thick metal layers 13 selects Ti and Au material, and thickness is 1.0 μm;
(14) n pad 14 selects the combination of Cr and Au material, and thickness is 1.0 μm;
Embodiment 4
The difference of the present embodiment and embodiment 1 is:
(1) p-electrode 1 selects the combination of Cr and Au material, and thickness is 2 μm;
(2) substrate 2 is Mo material; Thickness is 150 μm;
(3) bonded layer 3 selects Cr, Ti and Al combination of materials, and thickness is 2 μm;
(4) mirror layer 4 selects the combination of Ni and Al material, and thickness is 2 μm;
(5) insulating barrier 5 selects Si
3n
4material, thickness is 1 μm, and opening diameter is 15 μm;
(6) p-type current extending 6 is p-GaP materials, and the concentration of p-type doping is 1 × 10
21cm
-3, thickness is 4 μm;
(7) p-type semiconductor layer 7 is p-AlGaAs materials, and the concentration of p-type doping is 1 × 10
20cm
-3, thickness is 2 μm;
(8) active area 8 is multi-quantum pit structures, uses AlGaInP material;
(9) n-type semiconductor layer 9 is n-AlGaAs materials, and the concentration of N-shaped doping is 1 × 10
20cm
-3, thickness is 2 μm;
(10) n-type window layer 10 is n-AlGaAs materials, and the concentration of N-shaped doping is 1 × 10
19cm
-3, thickness is 0.8 μm;
(11) N-shaped GaAs contact layer 11 is n-GaAs materials, and the concentration of N-shaped doping is 1 × 10
20cm
-3, thickness is 0.5 μm, and shape is rectangle, and monomer area is 20 μm
2;
(12) N-shaped metal ohmic contact 12 selects the combination of Au, Pt and Ni material, and thickness is 1.5 μm, shape, distribution consistent with size and N-shaped GaAs contact layer;
(13) n-electrode adds the combination that thick metal layers 13 selects Pt, Au material, and thickness is 2.0 μm;
(14) n pad 14 selects the combination of Ni and Au material, and thickness is 2.0 μm.
Embodiment 5
The difference of the present embodiment and embodiment 1 is:
(1) p-electrode 1 selects the combination of Pt and Ag material, and thickness is 5 μm;
(2) substrate 2 is SiC material; Thickness is 200 μm;
(3) bonded layer 3 selects Pt, Ti, Au and In combination of materials, and thickness is 3 μm;
(4) mirror layer 4 selects the combination of Au and Be material, and thickness is 4 μm;
(5) insulating barrier 5 selects SiO
2material, thickness is 2 μm, and opening diameter is 20 μm;
(6) p-type current extending 6 is p-GaP materials, and the concentration of p-type doping is 1 × 10
21cm
-3, thickness is 6 μm;
(7) p-type semiconductor layer 7 is p-AlInP materials, and the concentration of p-type doping is 1 × 10
21cm
-3, thickness is 4 μm;
(8) active area 8 uses AlInP and AlGaInP combination of materials;
(9) n-type semiconductor layer 9 is n-AlInP materials, and the concentration of N-shaped doping is 1 × 10
20cm
-3, thickness is 2 μm;
(10) n-type window layer 10 is n-AlGaInP materials, and the concentration of N-shaped doping is 1 × 10
21cm
-3, thickness is 1.0 μm;
(11) N-shaped GaAs contact layer 11 is n-GaAs materials, and the concentration of N-shaped doping is 1 × 10
21cm
-3, thickness is 1.0 μm, and shape is triangle, and monomer area is 50 μm
2;
(12) N-shaped metal ohmic contact 12 selects the combination of Ag, Ge and Ni material, and thickness is 2.0 μm, shape, distribution consistent with size and N-shaped GaAs contact layer;
(13) n-electrode adds the combination that thick metal layers 13 system selects Ag and Au material, and thickness is 3.0 μm;
(14) n pad 14 selects the combination of Ni, Au material, and thickness is 3.0 μm.
Embodiment 6
The difference of the present embodiment and embodiment 1 is:
(1) p-electrode 1 selects the combination of Ni and Cu material, and thickness is 5 μm;
(2) substrate 2 is Al material; Thickness is 300 μm;
(3) bonded layer 3 selects Pt, Ti, Al and In combination of materials, and thickness is 5 μm;
(4) mirror layer 4 selects the combination of Al and Be material, and thickness is 5 μm;
(5) insulating barrier 5 selects SiO
2material, thickness is 5 μm, and opening diameter is 50 μm;
(6) p-type current extending 6 is p-GaInP materials, and the concentration of p-type doping is 1 × 10
21cm
-3, thickness is 10 μm;
(7) p-type semiconductor layer 7 is p-GaInP materials, and the concentration of p-type doping is 1 × 10
21cm
-3, thickness is 10 μm;
(8) active area 8 uses AlInP, GaInP combination of materials;
(9) n-type semiconductor layer 9 is n-AlAs materials, and the concentration of N-shaped doping is 1 × 10
21cm
-3, thickness is 5 μm;
(10) n-type window layer 10 is n-AlInP materials, and the concentration of N-shaped doping is 1 × 10
20cm
-3, thickness is 2.0 μm;
(11) N-shaped GaAs contact layer 11 is n-GaAs materials, and the concentration of N-shaped doping is 1 × 10
21cm
-3, thickness is 2.0 μm, and shape is rectangle, and monomer area is 100 μm
2;
(12) N-shaped metal ohmic contact 12 selects the combination of Al, Ge and Ni material, and thickness is 10.0 μm, shape, distribution consistent with size and N-shaped GaAs contact layer;
(13) n-electrode adds the combination that thick metal layers 13 selects Al, Au material, and thickness is 10.0 μm;
(14) n pad 14 selects the combination of Ni and Al material, and thickness is 10.0 μm.
Claims (7)
1. the reversed polarity AlGaInP light-emitting diode of a distributing n face ohmic contact, it is characterized in that, p-electrode is followed successively by top by bottom, substrate, bonded layer, mirror layer, insulating barrier, p-type current extending, p-type semiconductor layer, active light emitting area, n-type semiconductor layer, n-type window layer, N-shaped GaAs contact layer, N-shaped metal ohmic contact, n-electrode adds thick metal layers and n pad, mirror layer is contacted with p-type current extending by insulating layer perforating, N-shaped GaAs contact layer presents dispersed arrangement in n-type window layer, each monomer N-shaped GaAs contact layer surface arranges a N-shaped metal ohmic contact, n-electrode adds thick metal layers and is arranged on n-type window layer surface and is covered on N-shaped metal ohmic contact.
2. the reversed polarity AlGaInP light-emitting diode of distributing n face according to claim 1 ohmic contact, it is characterized in that, described p-electrode thickness is 0.5 μm-10 μm; Substrate thickness is 20 μm-300 μm; Bonded layer thickness is 0.2 μm-10 μm mirror layer thickness is 0.1 μm-10 μm; Thickness of insulating layer is 0.1 μm-5 μm.
3. the reversed polarity AlGaInP light-emitting diode of distributing n face according to claim 1 ohmic contact, is characterized in that, the aperture of described insulating layer perforating is 0.5 μm-50 μm.
4. the reversed polarity AlGaInP light-emitting diode of distributing n face according to claim 1 ohmic contact, is characterized in that, described p-type current expansion layer thickness is 0.1 μm-10 μm; P-type semiconductor layer thickness is 0.1 μm-10 μm; N-type semiconductor layer thickness is 0.1 μm-10 μm; N-type window layer thickness is 0.1 μm-10 μm.
5. the reversed polarity AlGaInP light-emitting diode of distributing n face according to claim 1 ohmic contact, is characterized in that, described N-shaped GaAs contact layer monomer shape is rectangle, triangle or circle.
6. the reversed polarity AlGaInP light-emitting diode of distributing n face according to claim 1 ohmic contact, is characterized in that, described N-shaped GaAs contact layer monomer area is 1 μm
2-100 μm
2.
7. the reversed polarity AlGaInP light-emitting diode of distributing n face according to claim 1 ohmic contact, is characterized in that, the shape of described N-shaped metal ohmic contact is consistent with N-shaped GaAs contact layer with area.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410854300.6A CN104538527A (en) | 2014-12-31 | 2014-12-31 | Distributed n-face ohmic contact reversed polarity AlGaInP light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410854300.6A CN104538527A (en) | 2014-12-31 | 2014-12-31 | Distributed n-face ohmic contact reversed polarity AlGaInP light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104538527A true CN104538527A (en) | 2015-04-22 |
Family
ID=52854024
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410854300.6A Pending CN104538527A (en) | 2014-12-31 | 2014-12-31 | Distributed n-face ohmic contact reversed polarity AlGaInP light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104538527A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105702820A (en) * | 2016-04-08 | 2016-06-22 | 扬州乾照光电有限公司 | Reversed-polarity AlGaInP-based LED coated with ITO on surface and manufacturing method thereof |
| CN109148662A (en) * | 2018-10-17 | 2019-01-04 | 河北工业大学 | Light emitting diode and preparation method thereof with homogeneous electrode field distribution |
| CN111052416A (en) * | 2019-03-25 | 2020-04-21 | 泉州三安半导体科技有限公司 | Semiconductor light-emitting element |
| CN111540817A (en) * | 2020-05-19 | 2020-08-14 | 錼创显示科技股份有限公司 | Micro light-emitting diode chip |
| CN113097358A (en) * | 2021-03-31 | 2021-07-09 | 扬州乾照光电有限公司 | Light emitting diode and manufacturing method thereof |
| CN113921674A (en) * | 2021-09-30 | 2022-01-11 | 天津三安光电有限公司 | Light emitting diode and light emitting device |
| US11411136B2 (en) | 2020-05-19 | 2022-08-09 | PlayNitride Display Co., Ltd. | Micro light-emitting diode chip |
| TWI777399B (en) * | 2021-02-02 | 2022-09-11 | 聯嘉光電股份有限公司 | Multi-contact light-emitting diode die structure |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1851947A (en) * | 2006-05-26 | 2006-10-25 | 北京工业大学 | Efficient full-bright all-reflection light-emitting-diode and making method |
| JP2012222082A (en) * | 2011-04-06 | 2012-11-12 | Showa Denko Kk | Light-emitting diode, light-emitting diode lamp, and luminaire |
| WO2014061503A1 (en) * | 2012-10-16 | 2014-04-24 | 昭和電工株式会社 | Light-emitting diode, light-emitting diode lamp, and illumination device |
-
2014
- 2014-12-31 CN CN201410854300.6A patent/CN104538527A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1851947A (en) * | 2006-05-26 | 2006-10-25 | 北京工业大学 | Efficient full-bright all-reflection light-emitting-diode and making method |
| JP2012222082A (en) * | 2011-04-06 | 2012-11-12 | Showa Denko Kk | Light-emitting diode, light-emitting diode lamp, and luminaire |
| WO2014061503A1 (en) * | 2012-10-16 | 2014-04-24 | 昭和電工株式会社 | Light-emitting diode, light-emitting diode lamp, and illumination device |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105702820A (en) * | 2016-04-08 | 2016-06-22 | 扬州乾照光电有限公司 | Reversed-polarity AlGaInP-based LED coated with ITO on surface and manufacturing method thereof |
| CN109148662A (en) * | 2018-10-17 | 2019-01-04 | 河北工业大学 | Light emitting diode and preparation method thereof with homogeneous electrode field distribution |
| CN111052416A (en) * | 2019-03-25 | 2020-04-21 | 泉州三安半导体科技有限公司 | Semiconductor light-emitting element |
| CN111052416B (en) * | 2019-03-25 | 2023-06-06 | 泉州三安半导体科技有限公司 | Semiconductor light-emitting element |
| CN111540817A (en) * | 2020-05-19 | 2020-08-14 | 錼创显示科技股份有限公司 | Micro light-emitting diode chip |
| US11411136B2 (en) | 2020-05-19 | 2022-08-09 | PlayNitride Display Co., Ltd. | Micro light-emitting diode chip |
| TWI777399B (en) * | 2021-02-02 | 2022-09-11 | 聯嘉光電股份有限公司 | Multi-contact light-emitting diode die structure |
| CN113097358A (en) * | 2021-03-31 | 2021-07-09 | 扬州乾照光电有限公司 | Light emitting diode and manufacturing method thereof |
| CN113921674A (en) * | 2021-09-30 | 2022-01-11 | 天津三安光电有限公司 | Light emitting diode and light emitting device |
| CN113921674B (en) * | 2021-09-30 | 2024-06-04 | 天津三安光电有限公司 | Light emitting diode and light emitting device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104538527A (en) | Distributed n-face ohmic contact reversed polarity AlGaInP light emitting diode | |
| CN104952993B (en) | A kind of current extending carries the reversed polarity AlGaInP light emitting diode of two-dimension optical structure | |
| US10050181B2 (en) | Light emitting diode and fabrication method thereof | |
| US8552441B2 (en) | AlGaInP light-emitting diode having vertical structure with transparent multilayered reflective films | |
| US10673003B2 (en) | Light emitting diode chip and fabrication method | |
| US8759128B2 (en) | Light emitting diode (LED) die having recessed electrode and light extraction structures and method of fabrication | |
| JP2006108698A (en) | Contact for flip-chip light-emitting device and omnidirectional reflecting mirror | |
| CN105009308B (en) | Method and apparatus for creating porous reflective contact part | |
| US20060186552A1 (en) | High reflectivity p-contacts for group lll-nitride light emitting diodes | |
| KR101616150B1 (en) | Semiconductor light emitting diode and method of producing same | |
| KR20130069351A (en) | Vertical light emitting diode die and method of fabrication | |
| KR20100108597A (en) | Compound semiconductor light-emitting diode | |
| CN1983614A (en) | Semiconductor light emitting device | |
| KR20130012376A (en) | Manufacturing method of semiconductor light emitting device | |
| JP2011060966A (en) | Light-emitting device | |
| CN104916752A (en) | Reverse-polarity AlGaInP light-emitting diode structure with window layer being covered with indium tin oxide | |
| KR20110120906A (en) | Semiconductor light emitting diode and method of producing same | |
| CN104934508A (en) | AlGaInP reversed polarity light emitting diode structure with roughened reflective mirror structure | |
| CN104934510A (en) | AlGaInP light emitting diode structure without top electrode blocking | |
| JP6153351B2 (en) | Semiconductor light emitting device | |
| TWI495159B (en) | Light emitting diode element | |
| US10103289B2 (en) | Light-emitting diode | |
| CN105322062A (en) | Reversed-polarity AlGaInP light-emitting diode structure with p surface being provided with DBR reflection layer | |
| US20210343902A1 (en) | Optoelectronic semiconductor component having a sapphire support and method for the production thereof | |
| CN105374916A (en) | N-surface electrode-sinking reversed polarity AlGaInP light emitting diode chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150422 |