CN104952993B - A kind of current extending carries the reversed polarity AlGaInP light emitting diode of two-dimension optical structure - Google Patents
A kind of current extending carries the reversed polarity AlGaInP light emitting diode of two-dimension optical structure Download PDFInfo
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Abstract
The present invention provides the reversed polarity AlGaInP light emitting diode construction that a kind of current extending carries two-dimension optical structure, and p faces electrode, substrate, bonded layer, mirror layer, insulating barrier, the current extending with two-dimension optical structure, p-type semiconductor layer, active area, n-type semiconductor layer, Window layer, n faces electrode, n faces pad are followed successively by by the structure of bottom to top；The current extending with two-dimension optical structure contacts side with insulating barrier with the two-dimension optical structure with n faces electrode vertical center line face；The figure of the two-dimension optical structure is consistent with the figure of n faces electrode, and immediately below the electrode of n faces.Structure of the present invention can chop the optics guided mode inside LED off, effectively lift the light extraction efficiency of LED chip；Due to carrying two-dimension optical structure on current extending, and mirror layer has perforate, and the air duct of these insertion chips can effectively lift heat-sinking capability when LED chip works, and improves life-span and the reliability of device；It is easy to be integrated with existing LED techniques.
Description
Technical field
The present invention relates to the reversed polarity AlGaInP light emitting diode knot that a kind of current extending carries two-dimension optical structure
Structure, belong to light emitting diode manufacturing technology field.
Background technology
The fifties in last century, it is that many of representative well-known grinds in IBM Thomas J.Watson Research Center
Under the effort for studying carefully mechanism, the Group III-V semiconductor using GaAs representative emerges rapidly in semiconductor light emitting field.Afterwards with gold
The appearance of organic chemical vapor deposition (MOCVD) technology of category so that the growth of the Group III-V semiconductor of high quality breaches skill
Art potential barrier, the semiconductor light emitting diode device of various wavelength flood the market in succession.Due to semiconductor light-emitting-diode relative to
Current luminescent device has the speciality such as theoretical efficiency height, long lifespan, mechanical impact, is worldwide counted as a new generation
Illuminating device.But due to the universal higher (GaP of the refractive index of Group III-V semiconductor：3.2, GaN：2.4), this results in LED's
The light that light-emitting zone is sent is limited by interface total reflection phenomenon when being emitted to through chip surface in air, only few part
Light can be emitted to device exterior (GaP is about 4%) 2.4%, GaN is about.Interface total reflection phenomenon causes LED outer quantum
Efficiency is low, is to restrict the main reason for LED substitutes existing illuminating device.
The AlGaInP Window layers aluminum content of current AlGaInP reversed polarity light emitting diodes is high, because oxidizing process influences
It can not realize and be contacted with the good ohmic of metal electrode, be forced in AlGaInP Window layers and contacted with growing GaAs between metal electrode
Layer realizes Ohmic contact, and GaAs acutely absorbs for visible ray section energy, strong influence reversed polarity AlGaInP luminous two
The light extraction efficiency of pole pipe.
Nuese in 1969 et al. is in J.Electrochem Soc.：Solid State Sci., which have been delivered, utilizes asphalt mixtures modified by epoxy resin
The method of fat packaging LED chips, feux rouges GaAs bases LED external quantum efficiency is improved 1-2 times.GaAs materials and air it
Between add the epoxy resin that one layer of refractive index is 1.5 and can effectively increase cirtical angle of total reflection degree so that more light can be with
It is emitted to outside LED component.But raising of the method for external quantum efficiency is limited, and introduces a bed boundary more and also can
Cause interface Fresnel loss, while the radiation aging of resin material also results in light extraction efficiency decline.
1993, Schnitzer et al. proposed the method using etching to semiconductor material first in Appl.Phys.Lett.
Material light output surface is roughened so as to improve the method for the external quantum efficiency of LED chip, has obtained 50% light extraction efficiency.Table
The principle that raising LED chip light ejection efficiency is mutually changed in face is the concaveconvex structure using LED light output surfaces, will be totally reflected the light of angle
Line scatters or is guided out chip, so as to increase the light ratio that can be emitted to outside LED.Hereafter, Windisch exists
The periodicals such as IEEE Trans.Electron Dev. and Appl.Phys.Lett. report similar method to LED light extraction tables
Face is roughened.LED light output surfaces are roughened using the method for etching and are disadvantageous in that：(1) etching is for partly leading
The carrier transport properties of body material have very big destructiveness so that LED electric property substantially reduces；(2) etching apparatus
Purchase and use cost is extremely high so that LED cost significantly rises；(3) LED light output surfaces are carried out using etching
The pattern and size of roughening are had no idea to be controlled and optimized.(4) process time is longer, and production efficiency is relatively low.
Plauger publishes an article in J.Electrochem.Soc., it was recently reported that using the method for electrochemistry, to GaP materials
Effectively corroded.The deficiency that the method is roughened to LED light output surfaces is：(1) it is auxiliary to carry out to need applied voltage
Help, the technique for having additionally introduced electrode preparation；(2) corrosion structure obtained is unfavorable for LED light extraction.
Chinese patent CN101656284 provides a kind of method using ITO particle mask alligatoring red light-emitting diodes, should
Method comprises the following steps：(1) routinely using the method for metal organic chemical vapor deposition on substrate epitaxial growth N successively
Type contact layer, multi-quantum well active region and p-type contact layer, substrate are GaAs materials；(2) on the p-type contact layer of epitaxial growth
With the thickness 260nm of electron beam transpiration one ito thin film；(3) epitaxial wafer that will be covered with ITO immerses 1min in concentrated hydrochloric acid, corrosion
Fall part ITO, residual for granular ITO；(4) make mask with the ITO particles of residual, dry etching p-type contact layer, formed
Coarse surface；(5) ITO of residual is eroded with concentrated hydrochloric acid.The method needs that ITO current extendings are deposited twice, cost calibration
Normal LED techniques significantly improve, and do not propose to prepare light extraction knot in the mirror structure of reversed polarity AlGaInP Light-Emitting Diode
Structure, the design provided by the invention that two-dimension optical structure is prepared in AlGaInP reversed polarity LED chip current extendings it is not related to.
Chinese patent CN101656285 discloses the method that light emitting diode coarse surface is made using PS spheres as template,
The method comprising the steps of：(1) routinely epitaxial growth epitaxial wafer；(2) one layer is laid on the p-type contact layer of epitaxial growth by PS
Ball is closely arranged the monofilm of composition；(3) using tetraethyl orthosilicate, the chloride of metal or nitrate as precursor, by precursor,
It is filled in after the mixing of second alcohol and water in the gap between the PS balls of monofilm and p-type contact layer, is stored at room temperature and heat resolve is
Corresponding oxide；(4) epitaxial wafer is placed in dichloromethane, gets rid of PS balls with dichloromethane dissolving, connect in PS balls with p-type
The oxide formed in gap between contact layer is retained on p-type contact layer by bowl-shape periodic arrangement structure；(5) with the oxygen formed
Compound makees mask, dry etching p-type contact layer, forms coarse surface；(6) oxide of residual is eroded.The method needs profit
By the use of PS microballoons as mask, complex steps, cost is higher and is difficult to ensure that the uniform roughening structure for obtaining larger area, and does not relate to
And the design provided by the invention that two-dimension optical structure is prepared in AlGaInP reversed polarity LED chip current extendings.
Chinese patent CN102148324A, which discloses to prepare at the LED component back side of transparent substrates, carries the anti-of optical texture
Mirror preparation method is penetrated, main contents include：A kind of LED chip with substrate condenser mirror, including chip upper surface and core
Piece lower surface, the chip lower surface are provided with the light gathering reflector lens array that converging action is played after reflecting incident light,
Its preparation method is that surface carries out being cut into crisscross cutting under the die by diamond cutting cutter or laser cutting
Road, condenser mirror is formed between the Cutting Road of adjacent intersection, several condenser mirrors composition light gathering reflector lens array, or
Make several circular diaphragms on surface under the die by photoetching, then using phosphoric acid hybrid corrosion liquid or wait from
Daughter etching apparatus performs etching to the region beyond circular diaphragm on chip lower surface, thus produces condenser mirror battle array
Row, LED chip of the present invention can obtain higher light efficiency, meanwhile, it can also be increased by the making of substrate light gathering reflector lens array
Add the area of dissipation of a part of device, so as to further lift the performance of device.This invention is only suitable in transparent substrates LED chip
Middle application, it is not related to and provided by the invention prepares setting for two-dimension optical structure in AlGaInP reversed polarity LED chip current extendings
Meter.
In summary, above technology, patent are not related to current extending provided by the invention and carry two-dimension optical structure
Reversed polarity AlGaInP LED designs.
The content of the invention
In view of the shortcomings of the prior art, the present invention provides the reversed polarity that a kind of current extending carries two-dimension optical structure
AlGaInP light emitting diode constructions, the application of two-dimension optical structure of the present invention can chop the optics guided mode inside LED off, improve
The light extraction efficiency of LED chip.
Term is explained：
1、LED：Light Emitting Diode, light emitting diode.
2、CVD：Chemical Vapor Deposition, chemical vapor deposition.
3、MOCVD：Metal-organic Chemical Vapor Deposition, metal-organic chemical vapor sink
Product.
Technical scheme is as follows：
A kind of current extending carries the reversed polarity AlGaInP light emitting diode construction of two-dimension optical structure, such as Fig. 1 institutes
Show, by the structure of bottom to top be followed successively by p faces electrode, substrate, bonded layer, mirror layer, insulating barrier, with two-dimension optical knot
Current extending, p-type semiconductor layer, active area, n-type semiconductor layer, Window layer, n faces electrode, the n faces pad of structure；It is described to carry
The current extending of two-dimension optical structure contacts side with insulating barrier with the two-dimension optical with n faces electrode vertical center line face
Structure；The figure of the two-dimension optical structure is consistent with the figure of n faces electrode, and immediately below the electrode of n faces.
Described p faces electrode is prepared in substrate back, from Au, Ge, Ni, Ti, Cr, Al, Ag, Cu, Be, Pd, Pt material
Homogenous material or multiple materials combination, using evaporation or sputtering mode prepare；Thickness is 0.5 μm -10 μm；
Described substrate selects Si, GaAs, Al2O3, GaP, InP, SiC, Cu, Mo, Al material；Thickness is 20 μm -300 μm；
The combination of homogenous material or multiple materials that described bonded layer is selected in Au, In, Sn, Ti, Pt, Al, Cr material,
Prepared using the mode of evaporation or sputtering；Thickness is 0.2 μm -10 μm；
Described mirror layer selects the homogenous material or more of Au, Ge, Ni, Ti, Al, Ag, Cu, Cr, Be, Pd, Pt material
The combination of individual material, the Ohmic contact with the current extending with two-dimension optical structure is taken into account, use the side of evaporation or sputtering
It is prepared by formula；It is covered on bonded layer, thickness is 0.1 μm -10 μm；The part of two-dimension optical structure is presented on the mirror layer
With n faces electrode vertical center line face；The mirror layer is penetrated insulating barrier in the form of perforate and carries two-dimension optical structure
Current extending directly contact, the scope of opening diameter is 1-50 μm；
Described insulating barrier selects SiO2、Si3N4、TiO2Or Al2O3Material, prepared using CVD or sputtering or evaporation mode；
It is covered on mirror layer, thickness is 0.1 μm -5 μm；
The described current extending with two-dimension optical structure is p-GaP, p-AlInP, p- prepared by MOCVD technologies
GaInP, p-GaAs, p-AlAs, p-AlGaAs, p-AlAsP, p-AlGaInP material, the concentration of p-type doping is 1 × 1018cm-3-
1×1021cm-3, thickness is 0.1 μm -10 μm；Side is contacted with insulating barrier with the two dimension with n faces electrode vertical center line face
Optical texture；The figure of the two-dimension optical structure is consistent with the figure of n faces electrode, and immediately below the electrode of n faces, depth is
0.1 μm -10 μm, width is 1 μm -20 μm；
Described p-type semiconductor layer is p-GaP, p-AlInP, p-GaInP, p-GaAs, p- prepared by MOCVD technologies
AlAs, p-AlGaAs, p-AlAsP, p-AlGaInP material, the concentration of p-type doping is 1 × 1017cm-3-1×1021cm-3, thickness
For 0.1 μm -10 μm；
Described active area be MOCVD technologies prepare MQW or multiheterostructure, from AlInP, GaInP,
The combination of AlGaInP, GaAs, InGaAs, AlGaAs, AlAsP, GaAsP homogenous material or multiple materials；
Described n-type semiconductor layer is n-GaP, n-AlInP, n-GaInP, n-GaAs, n- prepared by MOCVD technologies
AlAs, n-AlGaAs, n-AlAsP, n-AlGaInP material, the concentration of n-type doping is 1 × 1017cm-3-1×1021cm-3, thickness
For 0.1 μm -10 μm；
Described Window layer is n-GaP, n-AlInP, n-GaInP, n-GaAs, n-AlAs, n- prepared by MOCVD technologies
AlGaAs, n-AlAsP, n-AlGaInP material, the concentration of n-type doping is 1 × 1017cm-3-1×1021cm-3, thickness be 0.1 μm-
10μm；
Described n faces electrode selects the homogenous material or multiple of Au, Ge, Ni, Ti, Cr, Al, Ag, Cu, Be, Pd, Pt material
The combination of material, prepared using the mode of evaporation or sputtering；Thickness is 0.5 μm -10 μm；
Described n faces pad selects the homogenous material or multiple of Au, Ge, Ni, Ti, Cr, Al, Ag, Cu, Be, Pd, Pt material
The combination of material, prepared using the mode of evaporation or sputtering；Thickness is 0.5 μm -10 μm.
The excellent results of the present invention are as follows：
1. current extending of the present invention carries the reversed polarity AlGaInP light emitting diode knot of two-dimension optical structure
Structure, the optics guided mode inside LED can be chopped off, effectively lift the light extraction efficiency of LED chip.
2. current extending of the present invention carries the reversed polarity AlGaInP light emitting diode knot of two-dimension optical structure
Structure, due to carrying two-dimension optical structure on current extending, and mirror layer has perforate, and the air duct of these insertion chips can
Effectively to lift heat-sinking capability during LED chip work, life-span and the reliability of device are improved.
3. current extending of the present invention carries the reversed polarity AlGaInP light emitting diode knot of two-dimension optical structure
Structure, new process apparatus and method are not introduced into, are easy to be integrated with existing LED techniques.
Brief description of the drawings
Fig. 1 is the reversed polarity AlGaInP light emitting diode that current extending of the present invention carries two-dimension optical structure
The diagrammatic cross-section of structure.
Fig. 2 is the reversed polarity AlGaInP light emitting diode that current extending of the present invention carries two-dimension optical structure
The schematic top plan view of structure.
In figure, 1, p faces electrode, 2, substrate, 3, bonded layer, 4, mirror layer, 5, insulating barrier, 6, with two-dimension optical structure
Current extending, 7, p-type semiconductor layer, 8, active area, 9, n-type semiconductor layer, 10, Window layer, 11, n faces electrode, 12, n faces
Pad.
Embodiment
The present invention is described in detail with reference to embodiment and Figure of description, but not limited to this.
Embodiment 1：
A kind of reversed polarity AlGaInP light emitting diode of current extending with two-dimension optical structure is as shown in figure 1, the bottom of by
The structure at portion to top be followed successively by p faces electrode 1, substrate 2, bonded layer 3, mirror layer 4, insulating barrier 5, with two-dimension optical structure
Current extending 6, p-type semiconductor layer 7, active area 8, n-type semiconductor layer 9, Window layer 10, n faces electrode 11, n faces pad 12；
The current extending with two-dimension optical structure contacts side with insulating barrier and carried and n faces electrode vertical center line face
Two-dimension optical structure；The figure of the two-dimension optical structure is consistent with the figure of n faces electrode, and immediately below the electrode of n faces.
P faces electrode 1 is prepared at the back side of substrate 2, from the combination of Au, Ti material, is prepared using evaporation mode；Thickness
For 0.5 μm；
The substrate 2 is Si materials；Thickness is 20 μm；
The bonded layer 3 selects Au materials, is prepared using the mode of evaporation；Thickness is 0.2 μm；
The mirror layer 4 is prepared from the combination of Au, Be material using evaporation mode；It is covered on bonded layer；It is thick
Spend for 0.1 μm；Part and the n faces electrode vertical center line face of two-dimension optical structure are presented on the mirror layer；It is described anti-
Penetrate mirror layer insulating barrier is penetrated in the form of perforate and directly contacted with the current extending of two-dimension optical structure, opening diameter is
1μm；
The insulating barrier 5 selects SiO2Material, prepared using CVD modes；It is covered on mirror layer 4, thickness 0.1
μm；
The current extending 6 with two-dimension optical structure is p-GaP materials prepared by MOCVD technologies, p-type doping
Concentration is 1 × 1018cm-3, thickness is 0.1 μm；Side is contacted with insulating barrier with two with n faces electrode vertical center line face
Tie up optical texture；The figure of the two-dimension optical structure is consistent with the figure of n faces electrode, and immediately below the electrode of n faces, depth is
0.1 μm, altitude range is 1 μm；
The p-type semiconductor layer 7 is p-AlInP materials prepared by MOCVD technologies, and the concentration of p-type doping is 1 × 1017cm-3, thickness is 0.1 μm；
The active area 8 is multi-quantum pit structure prepared by MOCVD technologies, uses the combination of AlInP, AlGaInP material；
The n-type semiconductor layer 9 is n-AlInP materials prepared by MOCVD technologies, and the concentration of n-type doping is 1 × 1017cm-3, thickness is 0.1 μm；
Described Window layer 10 is n-AlGaInP materials prepared by MOCVD technologies, and the concentration of n-type doping is 1 × 1017cm-3, thickness is 0.1 μm；
N faces electrode 11 is prepared from the combination of Ni, Al material using the mode of evaporation；Thickness is 0.5 μm；
N faces pad 12 is prepared from the combination of Ni, Al material using the mode of evaporation；Thickness is 0.5 μm.
Embodiment 2：
Reversed polarity AlGaInP of a kind of a kind of current extending as described embodiments with two-dimension optical structure luminous two
Pole pipe, its difference be,
P faces electrode 1 is prepared at the back side of substrate 2, from the combination of Au, Ti material, is prepared using evaporation mode；Thickness
For 0.5 μm；
The substrate 2 is Si materials；Thickness is 20 μm；
The bonded layer 3 selects Au materials, is prepared using the mode of evaporation；Thickness is 0.2 μm；
The mirror layer 4 is prepared from the combination of Au, Be material using evaporation mode；Thickness is 0.5 μm；Perforate is straight
Footpath is 5 μm；
The insulating barrier 5 selects SiO2Material, prepared using CVD modes；Thickness is 0.5 μm；
The current extending 6 with two-dimension optical structure is p-GaP materials prepared by MOCVD technologies, p-type doping
Concentration is 1 × 1018cm-3, thickness is 0.5 μm；The depth of the two-dimension optical structure is 0.5 μm, and width is 5 μm；
The p-type semiconductor layer 7 is p-AlInP materials prepared by MOCVD technologies, and the concentration of p-type doping is 1 × 1017cm-3, thickness is 0.1 μm；
The active area 8 is multi-quantum pit structure prepared by MOCVD technologies, uses the combination of AlInP, AlGaInP material；
The n-type semiconductor layer 9 is n-AlInP materials prepared by MOCVD technologies, and the concentration of n-type doping is 1 × 1017cm-3, thickness is 0.1 μm；
Described Window layer 10 is n-AlGaInP materials prepared by MOCVD technologies, and the concentration of n-type doping is 1 × 1017cm-3, thickness is 0.1 μm；
N faces electrode 11 is prepared from the combination of Ni, Al material using the mode of evaporation；Thickness is 0.5 μm；
N faces pad 12 is prepared from the combination of Ni, Al material using the mode of evaporation；Thickness is 0.5 μm.
Embodiment 3：
Reversed polarity AlGaInP of a kind of a kind of current extending as described embodiments with two-dimension optical structure luminous two
Pole pipe, its difference be,
P faces electrode 1 is prepared at the back side of substrate 2, from the combination of Au, Ti material, is prepared using evaporation mode；Thickness
For 0.5 μm；
The substrate 2 is Si materials；Thickness is 20 μm；
The bonded layer 3 selects Au materials, is prepared using the mode of evaporation；Thickness is 0.2 μm；
The mirror layer 4 is prepared from the combination of Au, Be material using evaporation mode；Thickness is 0.8 μm；Perforate is straight
Footpath is 15 μm；
The insulating barrier 5 selects SiO2Material, prepared using CVD modes；Thickness is 0.3 μm；
The current extending 6 with two-dimension optical structure is p-GaP materials prepared by MOCVD technologies, p-type doping
Concentration is 1 × 1018cm-3, thickness is 0.8 μm；The depth of the two-dimension optical structure is 0.8 μm, and width is 10 μm；
The p-type semiconductor layer 7 is p-AlInP materials prepared by MOCVD technologies, and the concentration of p-type doping is 1 × 1017cm-3, thickness is 0.1 μm；
The active area 8 is multi-quantum pit structure prepared by MOCVD technologies, uses the combination of AlInP, AlGaInP material；
The n-type semiconductor layer 9 is n-AlInP materials prepared by MOCVD technologies, and the concentration of n-type doping is 1 × 1017cm-3, thickness is 0.1 μm；
Described Window layer 10 is n-AlGaInP materials prepared by MOCVD technologies, and the concentration of n-type doping is 1 × 1017cm-3, thickness is 0.1 μm；
N faces electrode 11 is prepared from the combination of Ni, Al material using the mode of evaporation；Thickness is 0.5 μm；
N faces pad 12 is prepared from the combination of Ni, Al material using the mode of evaporation；Thickness is 0.5 μm.
Embodiment 4：
Reversed polarity AlGaInP of a kind of a kind of current extending as described embodiments with two-dimension optical structure luminous two
Pole pipe, its difference be,
P faces electrode 1 is prepared at the back side of substrate 2, from the combination of Au, Ti material, is prepared using evaporation mode；Thickness
For 0.5 μm；
The substrate 2 is Si materials；Thickness is 20 μm；
The bonded layer 3 selects Au materials, is prepared using the mode of evaporation；Thickness is 0.2 μm；
The mirror layer 4 is prepared from the combination of Au, Be material using evaporation mode；Thickness is 1 μm；Opening diameter
For 20 μm；
The insulating barrier 5 selects SiO2Material, prepared using CVD modes；Thickness is 1 μm,；
The current extending 6 with two-dimension optical structure is p-GaP materials prepared by MOCVD technologies, p-type doping
Concentration is 1 × 1018cm-3, thickness is 1 μm；The depth of the two-dimension optical structure is 1 μm, and width is 12 μm；
The p-type semiconductor layer 7 is p-AlInP materials prepared by MOCVD technologies, and the concentration of p-type doping is 1 × 1017cm-3, thickness is 0.1 μm；
The active area 8 is multi-quantum pit structure prepared by MOCVD technologies, uses the combination of AlInP, AlGaInP material；
The n-type semiconductor layer 9 is n-AlInP materials prepared by MOCVD technologies, and the concentration of n-type doping is 1 × 1017cm-3, thickness is 0.1 μm；
Described Window layer 10 is n-AlGaInP materials prepared by MOCVD technologies, and the concentration of n-type doping is 1 × 1017cm-3, thickness is 0.1 μm；
N faces electrode 11 is prepared from the combination of Ni, Al material using the mode of evaporation；Thickness is 0.5 μm；
N faces pad 12 is prepared from the combination of Ni, Al material using the mode of evaporation；Thickness is 0.5 μm.
Embodiment 5：
Reversed polarity AlGaInP of a kind of a kind of current extending as described embodiments with two-dimension optical structure luminous two
Pole pipe, its difference be,
P faces electrode 1 is prepared at the back side of substrate 2, from the combination of Au, Ti material, is prepared using evaporation mode；Thickness
For 0.5 μm；
The substrate 2 is Si materials；Thickness is 20 μm；
The bonded layer 3 selects Au materials, is prepared using the mode of evaporation；Thickness is 0.2 μm；
The mirror layer 4 is prepared from the combination of Au, Be material using evaporation mode；Thickness is 2 μm；Opening diameter
For 30 μm；
The insulating barrier 5 selects SiO2Material, prepared using CVD modes；Thickness is 2 μm,；
The current extending 6 with two-dimension optical structure is p-GaP materials prepared by MOCVD technologies, p-type doping
Concentration is 1 × 1018cm-3, thickness is 2 μm；The depth of the two-dimension optical structure is 1.5 μm, and width is 20 μm；
The p-type semiconductor layer 7 is p-AlInP materials prepared by MOCVD technologies, and the concentration of p-type doping is 1 × 1017cm-3, thickness is 0.1 μm；
The active area 8 is multi-quantum pit structure prepared by MOCVD technologies, uses the combination of AlInP, AlGaInP material；
The n-type semiconductor layer 9 is n-AlInP materials prepared by MOCVD technologies, and the concentration of n-type doping is 1 × 1017cm-3, thickness is 0.1 μm；
Described Window layer 10 is n-AlGaInP materials prepared by MOCVD technologies, and the concentration of n-type doping is 1 × 1017cm-3, thickness is 0.1 μm；
N faces electrode 11 is prepared from the combination of Ni, Ge, Ag material using the mode of evaporation；Thickness is 4 μm；
N faces pad 12 is prepared from the combination of Ni, Ge, Ag material using the mode of evaporation；Thickness is 4 μm.
Embodiment 6：
Reversed polarity AlGaInP of a kind of a kind of current extending as described embodiments with two-dimension optical structure luminous two
Pole pipe, its difference be,
P faces electrode 1 is prepared at the back side of substrate 2, from the combination of Au, Ti material, is prepared using evaporation mode；Thickness
For 0.5 μm；
The substrate 2 is Si materials；Thickness is 20 μm；
The bonded layer 3 selects Au materials, is prepared using the mode of evaporation；Thickness is 0.2 μm；
The mirror layer 4 is prepared from the combination of Au, Be material using evaporation mode；Thickness is 5 μm；Opening diameter
For 50 μm；
The insulating barrier 5 selects SiO2Material, prepared using CVD modes；Thickness is 5 μm；
The current extending 6 with two-dimension optical structure is p-GaP materials prepared by MOCVD technologies, p-type doping
Concentration is 1 × 1018cm-3, thickness is 5 μm；The depth of the two-dimension optical structure is 4 μm, and width is 20 μm；
The p-type semiconductor layer 7 is p-AlInP materials prepared by MOCVD technologies, and the concentration of p-type doping is 1 × 1017cm-3, thickness is 0.1 μm；
The active area 8 is multi-quantum pit structure prepared by MOCVD technologies, uses the combination of AlInP, AlGaInP material；
The n-type semiconductor layer 9 is n-AlInP materials prepared by MOCVD technologies, and the concentration of n-type doping is 1 × 1017cm-3, thickness is 0.1 μm；
Described Window layer 10 is n-AlGaInP materials prepared by MOCVD technologies, and the concentration of n-type doping is 1 × 1017cm-3, thickness is 0.1 μm；
N faces electrode 11 is prepared from the combination of Ni, Al material using the mode of evaporation；Thickness is 0.5 μm；
N faces pad 12 is prepared from the combination of Ni, Al material using the mode of evaporation；Thickness is 0.5 μm.
Claims (5)
1. a kind of current extending carries the reversed polarity AlGaInP light emitting diode construction of two-dimension optical structure, by bottom to top
The structure in portion is followed successively by p faces electrode, substrate, bonded layer, mirror layer, insulating barrier, the current expansion with two-dimension optical structure
Layer, p-type semiconductor layer, active area, n-type semiconductor layer, Window layer, n faces electrode, n faces pad；It is described to carry two-dimension optical structure
Current extending side is contacted with insulating barrier with two-dimension optical structure with n faces electrode vertical center line face；Described two
It is consistent with the figure of n faces electrode to tie up the figure of optical texture, and immediately below the electrode of n faces.
A kind of 2. reversed polarity AlGaInP of the current extending according to claim 1 with two-dimension optical structure luminous two
Pole pipe structure, it is characterised in that the mirror layer selects the list of Au, Ge, Ni, Ti, Al, Ag, Cu, Cr, Be, Pd, Pt material
The combination of one material or multiple materials, the Ohmic contact with the current extending with two-dimension optical structure is taken into account, uses evaporation
Or prepared by the mode of sputtering；The mirror layer is covered on bonded layer, and thickness is 0.1 μm -10 μm；On the mirror layer
Part and the n faces electrode vertical center line face of two-dimension optical structure is presented；The mirror layer is penetrated absolutely in the form of perforate
Edge layer directly contacts with the current extending with two-dimension optical structure, and the scope of opening diameter is 1-50 μm.
A kind of 3. reversed polarity AlGaInP of the current extending according to claim 1 with two-dimension optical structure luminous two
Pole pipe structure, it is characterised in that the insulating barrier selects SiO2, Si3N4, TiO2 or Al2O material, uses CVD or sputtering or steaming
It is prepared by originating party formula；The insulating barrier is covered on mirror layer, and thickness is 0.1 μm -5 μm.
A kind of 4. reversed polarity AlGaInP of the current extending according to claim 1 with two-dimension optical structure luminous two
Pole pipe structure, it is characterised in that the current extending with two-dimension optical structure is p-GaP, p- prepared by MOCVD technologies
AlInP, p-GaInP, p-GaAs, p-AlAs, p-AlGaAs, p-AlAsP, p-AlGaInP material, the concentration of p-type doping for 1 ×
1018cm-3-1 × 1021cm-3, thickness are 0.1 μm -10 μm.
A kind of 5. reversed polarity AlGaInP of the current extending according to claim 1 with two-dimension optical structure luminous two
Pole pipe structure, it is characterised in that the graphics depth of the two-dimension optical structure of the current extending with two-dimension optical structure
For 0.1 μm 10 μm, width is 1 μm -20 μm.
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| CN109920893A (en) * | 2019-02-20 | 2019-06-21 | 南昌大学 | A kind of reversed polarity AlGaInP LED chip and preparation method with good current expansion characteristic |
| EP3951894A4 (en) * | 2019-03-25 | 2022-11-02 | Quanzhou Sanan Semiconductor Technology Co., Ltd. | Semiconductor light-emitting element |
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