CN206163513U - GaAs base LED chip with alligatoring electric current extension layer - Google Patents
GaAs base LED chip with alligatoring electric current extension layer Download PDFInfo
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- CN206163513U CN206163513U CN201621174501.2U CN201621174501U CN206163513U CN 206163513 U CN206163513 U CN 206163513U CN 201621174501 U CN201621174501 U CN 201621174501U CN 206163513 U CN206163513 U CN 206163513U
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Abstract
The utility model provides a gaAs base LED chip with alligatoring electric current extension layer, this gaAs base of LED chip includes N electrode, gaAs substrate and epitaxial layer, is provided with the electric current extension layer on the epitaxial layer, is provided with the p electrode on the electric current extension layer, p electrode outlying electric current extension layer is an alligatoring electric current extension layer. The utility model discloses a set up alligatoring electric current extension layer, avoided among the prior art directly carrying out the instability that the alligatoring caused to the epitaxial layer of gaAs base LED chip, and the alligatoring electric current extension layer figure through the gluey mode preparation of peeling off of burden is more stable, the efficiency of the light -emitting is improved, avoided adopting corrosive liquid among the conventional etch preparation electrode process to the corruption of alligatoring electric current extension layer and make a sound the alligatoring face, the method of preparation electrode is peeled off through negative photoresist, avoided changeeing the bonding wire to the damage and the electrode figure of alligatoring electric current extension layer.
Description
Technical field
The utility model is related to a kind of GaAs bases LED (light emitting diode) chip, belongs to photoelectron technical field.
Background technology
Used as the illumination new light sources of 21 century, under same brightness, semiconductor lamp power consumption is only the l/ of ordinary incandescent lamp to LED
10, and the life-span can extend 100 times.LED component is cold light source, and light efficiency is high, and operating voltage is low, and power consumption is little, small volume, can
Planar package, it is easy to develop light and thin type product, the firm in structure and life-span is very long, the harmful substance such as light source itself is not mercurous, lead, nothing
Infrared and ultraviolet pollution, will not produce pollution to external world in production and use.Therefore, semiconductor lamp have energy-saving and environmental protection,
The features such as life-span length, as transistor substitutes electron tube, semiconductor lamp substitutes traditional incandescent lamp and fluorescent lamp, also will be
Trend of the times.No matter from the angle saved electric energy, reduce greenhouse gas emission, or from the angle of environmental pollution is reduced, LED makees
All there is the very high potential for substituting conventional illumination sources for novel illumination light source.
The fifties in last century, is that many well-known of representative is ground in IBM Thomas J.Watson Research Center
Under studying carefully the effort of mechanism, the III-V race's semiconductors with GaAs representative emerge rapidly in semiconductor light emitting field.Afterwards with gold
The appearance of category organic chemical vapor deposition (MOCVD) technology so that the growth of high-quality III-V races semiconductor breaches skill
Art barrier, the semiconductor light emitting diode device of various wavelength floods the market in succession.Due to semiconductor light-emitting-diode relative to
Current luminescent device has efficiency high, life-span length, resists the speciality such as strong mechanical shock, is worldwide counted as photograph of new generation
Funerary objects part.But due to the universal higher (GaP of the refractive index of III-V races semiconductor：3.2), this light-emitting zone for resulting in LED is sent out
The light for going out is limited by interface total reflection phenomenon when Jing chip surfaces are shone in air, and only extremely least a portion of light can be with outgoing
To device exterior (GaP is about 2.4%).Interface total reflection phenomenon causes the external quantum efficiency of LED low, is that restriction LED is substituted
The main cause of existing illuminating device.
How GaAs base LED chips increase light extraction efficiency and become main R＆D direction at this stage, if by extension
Layer is roughened, and is typically realized by chemical attack, and chemical attack has that etch pattern is unstable, the lower meeting of batch production
Produce fluctuation；If etching rule constrained devices using ICP, how can effectively improving extraction efficiency and can not affect electrode and
Epitaxial layer becomes the Main way studied at this stage.
Disclosed in Chinese patent literature CN 105428485A《The AlGaInP bases LED of GaP surface coarsenings and its manufacturer
Method》It is directly epitaxial wafer to be immersed in coarsening solution, makes exposed p-type GaP Window layer surface coarsening, has reached wet etching roughening
The effect of p-type GaP window layer surface；Deposition ito film is used as current extending.The method is mainly thick to carrying out on epitaxial layer
Change, it is higher for the requirement of epitaxial growth and epi-layer surface, it is difficult large-scale production.
At this stage major part GaAs base LED chips are all that epitaxial layer is roughened, and epitaxial layer roughening requires higher and not
Easily form preferable shooting angle.
Utility model content
The problem that the light extraction efficiency existed for existing GaAs base LED chips has much room for improvement, the utility model provides a kind of
The high GaAs base LED chips with roughening current extending of light extraction efficiency.
GaAs base LED chips with roughening current extending of the present utility model, employ the following technical solutions：
The GaAs base LED chips, including N electrode, GaAs substrates and epitaxial layer, N electrode, GaAs substrates and epitaxial layer are under
It is supreme to set gradually, current extending is provided with epitaxial layer, p-electrode, the electric current of p-electrode periphery are provided with current extending
Extension layer is roughening current extending.
Above-mentioned GaAs base LED chips by arranging the current extending not being roughened below p-electrode, and to p-electrode periphery
Current extending roughening, p-electrode lower section electric current is preferably extended by current extending, by p-electrode periphery electric current
The roughening of extension layer, changes the shooting angle of light, improves light extraction efficiency, improves the quality of GaAs based light-emitting diodes.
The utility model is by arranging roughening current extending, it is to avoid to the outer of GaAs base LED chips in prior art
Prolonging layer directly carries out being roughened the unstability for causing, and the roughening current expansion layer pattern prepared by way of bearing glue and peeling off is more
It is stable, improve light extraction efficiency, it is to avoid corrosive liquid in electrode process is prepared to being roughened current expansion using conventional corrosion method
The corrosion of layer and ring to being roughened face, method that electrode is prepared by negative photoresist stripping, it is to avoid to being roughened current expansion
Layer damage and electrode pattern is more easy to bonding wire.
Description of the drawings
Fig. 1 is the structural representation of the GaAs base LED chips in the utility model with roughening current extending.
In figure：1st, N electrode, 2, GaAs substrates, 3, epitaxial layer, 4, roughening current extending, 5, be not roughened current extending,
6th, P electrode.
Specific embodiment
GaAs base LED chips with roughening current extending of the present utility model, as shown in figure 1, from lower to upper successively
For N electrode 1, GaAs substrates 2, epitaxial layer 3 and current extending, p-electrode 6 is provided with current extending, except under p-electrode 6
The current extending region of the periphery of p-electrode 6 is roughening current extending 4, that is, electric current beyond the current extending region of side
Extension layer is not only roughening structure below p-electrode 6, and remainder is all roughening.
It is not roughened region (not being roughened current extending 5) in current extending to overlap with P electrode 6, so in p-electrode 6
Lower section is preferably extended electric current by the current extending without roughening, by current extending in outer other areas of P electrode
Domain carries out being roughened the shooting angle for changing light, improves light extraction efficiency, improves the quality of GaAs based light-emitting diodes.
In the utility model, the roughening preparation process of current extending 4 employs most easy method, using negative photo
Prepared by glue, the method peeled off using conventional negative photoresist, using negative photoresist, improve stablizing for roughening figure, is obtained
Preferably it is roughened current extending.
One layer of ito thin film is deposited on the surface of epitaxial layer 3, this ito thin film covers whole chip surface and except P electrode position
Outer other regions have carried out roughening treatment, and electric current can preferably be expanded to whole chip and be made by the roughening to ito thin film
Obtain luminous energy and obtain more preferable shooting angle；Ito thin film is set to define with GaAs base light emitting diode chip epitaxial layers by annealing
Good Ohmic contact, greatly reduces the voltage of chip.
The utility model has one layer of roughening current extending by growth and P electrode lower section is not to be roughened current extending,
Below p-electrode electric current is preferably extended by current extending, by the roughening to current extending, change the outgoing of light
Angle, improves light extraction efficiency, improves the quality of GaAs based light-emitting diodes.
Claims (1)
1. a kind of GaAs base LED chips with roughening current extending, including N electrode, GaAs substrates and epitaxial layer, N electrode,
GaAs substrates and epitaxial layer set gradually from bottom to top, it is characterized in that, current extending, current extending are provided with epitaxial layer
On be provided with p-electrode, the current extending of p-electrode periphery is roughening current extending.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621174501.2U CN206163513U (en) | 2016-11-02 | 2016-11-02 | GaAs base LED chip with alligatoring electric current extension layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621174501.2U CN206163513U (en) | 2016-11-02 | 2016-11-02 | GaAs base LED chip with alligatoring electric current extension layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206163513U true CN206163513U (en) | 2017-05-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621174501.2U Active CN206163513U (en) | 2016-11-02 | 2016-11-02 | GaAs base LED chip with alligatoring electric current extension layer |
Country Status (1)
| Country | Link |
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| CN (1) | CN206163513U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106340574A (en) * | 2016-11-02 | 2017-01-18 | 山东浪潮华光光电子股份有限公司 | GaAs-based LED chip with coarsened current expansion layer and preparation method of chip |
-
2016
- 2016-11-02 CN CN201621174501.2U patent/CN206163513U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106340574A (en) * | 2016-11-02 | 2017-01-18 | 山东浪潮华光光电子股份有限公司 | GaAs-based LED chip with coarsened current expansion layer and preparation method of chip |
| CN106340574B (en) * | 2016-11-02 | 2019-07-09 | 山东浪潮华光光电子股份有限公司 | GaAs base LED chip and preparation method with roughening current extending |
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