CN108110105A - A kind of UV LED chip, the production method of UV LED chip and a kind of ultraviolet LED - Google Patents
A kind of UV LED chip, the production method of UV LED chip and a kind of ultraviolet LED Download PDFInfo
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- CN108110105A CN108110105A CN201810096603.4A CN201810096603A CN108110105A CN 108110105 A CN108110105 A CN 108110105A CN 201810096603 A CN201810096603 A CN 201810096603A CN 108110105 A CN108110105 A CN 108110105A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 65
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 229910052751 metal Inorganic materials 0.000 claims abstract description 35
- 239000002184 metal Substances 0.000 claims abstract description 35
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 28
- 239000010980 sapphire Substances 0.000 claims abstract description 28
- 230000003139 buffering effect Effects 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims description 22
- 239000004793 Polystyrene Substances 0.000 claims description 18
- 229920002223 polystyrene Polymers 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 12
- 239000012528 membrane Substances 0.000 claims description 11
- 238000012545 processing Methods 0.000 claims description 10
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 230000007797 corrosion Effects 0.000 claims description 5
- 238000005260 corrosion Methods 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- 239000002061 nanopillar Substances 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 238000002203 pretreatment Methods 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 238000000407 epitaxy Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000009616 inductively coupled plasma Methods 0.000 claims description 3
- 238000001883 metal evaporation Methods 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 230000006911 nucleation Effects 0.000 claims description 2
- 238000010899 nucleation Methods 0.000 claims description 2
- 239000011148 porous material Substances 0.000 claims description 2
- 150000001336 alkenes Chemical class 0.000 claims 1
- 229920006389 polyphenyl polymer Polymers 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 22
- 238000000605 extraction Methods 0.000 abstract description 11
- 230000017525 heat dissipation Effects 0.000 abstract description 11
- 239000000463 material Substances 0.000 description 15
- 230000008569 process Effects 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910021389 graphene Inorganic materials 0.000 description 4
- 238000007788 roughening Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052934 alunite Inorganic materials 0.000 description 1
- 239000010424 alunite Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001473 noxious effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- KPZTWMNLAFDTGF-UHFFFAOYSA-D trialuminum;potassium;hexahydroxide;disulfate Chemical compound [OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[Al+3].[Al+3].[Al+3].[K+].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O KPZTWMNLAFDTGF-UHFFFAOYSA-D 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
Abstract
This application discloses a kind of UV LED chips,Due to having the ultraviolet LED epitaxial layer of tilting nano column array form tapered from bottom to up,The epitaxial layer of this form contains inclined the air gap,So that it is mutually communicated between adjacent inclination nano column array by air,Using the Fresnel scattering between nano column array and both interfaces of outside air and sloped sidewall to the diffusing reflection effect of light,Light extraction efficiency and the brightness of ultraviolet LED can be enhanced,Due also to the N-type ohmic contact layer is utilized through the Sapphire Substrate,The buffering and nucleating layer,The metal contact bolt of the AlN/AlGaN superlattice layers is connected to the N-type AlGaN layer,Therefore heat dissipation effect can be enhanced,Present invention also provides ultraviolet LED and UV LED chip production methods,Due to including above-mentioned UV LED chip,Therefore light extraction efficiency and the brightness of ultraviolet LED can be enhanced,Enhance heat dissipation effect.
Description
Technical field
The invention belongs to LED technology field, more particularly to the production method of a kind of UV LED chip, UV LED chip
And a kind of ultraviolet LED.
Background technology
With the development of ultraviolet LED technology, the promotion of output performance and the reduction of production cost, compared with traditional ultraviolet
Light source, ultraviolet LED have theoretical service life length, high efficiency, reliable and stable, brightness uniformity and excellent without noxious material etc.
Point, the extensive use in fields such as sterilizing, photocuring and general illuminations are also increasingly subject to semiconductor lighting row in recent years
The concern of industry.But at present in LED epitaxial wafer between interior contact layer material and epitaxial layer structure there are light absorption phenomenon,
The problem of resulting in light efficiency difference and not high brightness.
The content of the invention
To solve the above problems, the present invention provides a kind of UV LED chip, the production methods of UV LED chip and one
Kind ultraviolet LED, can enhance light extraction efficiency and the brightness of ultraviolet LED, enhance heat dissipation effect.
A kind of UV LED chip provided by the invention, including Sapphire Substrate, the upper surface of the Sapphire Substrate is successively
It is provided with buffering and nucleating layer, AlN/AlGaN superlattice layers, N-type AlGaN layer, there is tilting nanometer tapered from bottom to up
The ultraviolet LED epitaxial layer of column array format, the upper surface of the ultraviolet LED epitaxial layer are also disposed with planar conductive layer
And specular layer, the surface of the specular layer are fixed with P-type conduction substrate, the P-type conduction using articulamentum is bonded
The upper surface of substrate is disposed with p-type ohmic contact layer and P-type electrode, and the lower surface of the Sapphire Substrate is disposed with
N-type ohmic contact layer and N-type electrode, the N-type ohmic contact layer are utilized through the Sapphire Substrate, the buffering and nucleation
Layer, the metal contact bolt of the AlN/AlGaN superlattice layers are connected to the N-type AlGaN layer.
Preferably, in above-mentioned UV LED chip, the buffering and nucleating layer are BN layers of heterojunction structure.
Preferably, in above-mentioned UV LED chip, the bonding articulamentum is germanium layer, platinum layer, layer gold, aluminium layer or ITO
Layer.
Preferably, in above-mentioned UV LED chip, also set between the P-type conduction substrate and the p-type ohmic contact layer
It is equipped with conductive membrane layer.
Preferably, in above-mentioned UV LED chip, the range of tilt angles of the nano column array is 45 ° to 60 °, and
The pore diameter range in gap is 1nm to 5nm between adjacent nano column array.
A kind of ultraviolet LED provided by the invention, including such as any one of them UV LED chip above.
A kind of production method of UV LED chip provided by the invention, including：
Buffering and nucleating layer, AlN/AlGaN superlattice layers, N-type AlGaN are set gradually in the upper surface of Sapphire Substrate
Layer；
In the N-type AlGaN layer upper surface, the purple with tilting nano column array form tapered from bottom to up is set
Outer LED epitaxial layers set gradually planar conductive layer and specular layer in the upper surface of the ultraviolet LED epitaxial layer；
P-type ohmic contact layer and P-type electrode are set gradually in the upper surface of P-type conduction substrate；
The surface of the specular layer is fixed to the P-type conduction substrate using articulamentum is bonded；
N-type ohmic contact layer and N-type electrode are set gradually in the lower surface of the Sapphire Substrate, described N-type ohm connects
Contact layer is utilized through the Sapphire Substrate, the buffering and nucleating layer, the metal contact bolt of the AlN/AlGaN superlattice layers
It is connected to the N-type AlGaN layer.
Preferably, in the production method of above-mentioned UV LED chip, described set in the N-type AlGaN layer upper surface has
The ultraviolet LED epitaxial layer for having tilting nano column array form tapered from bottom to up includes：
In the upper surface deposition mask layer of the N-type AlGaN layer, the mask layer is SiO2Or Si3N4Or nickel；
The polystyrene spheres of individual layer are deposited on the mask layer using PECVD modes, the mask layer is made to gather with described
Point contact is formed between styrene ball；
Heat pre-treatment is carried out, using inductively coupled plasma etching technique, collapses the polystyrene spheres fusing
And become smaller, it is contacted with the mask layer forming face, exposes the mask layer between the adjacent polystyrene spheres；
Using metal evaporation technique, deposited metal is thin on the surface of the polystyrene spheres and the mask layer being exposed
Film layer；
Using toluene ultrasonic processing technique, the metal film layer on the polystyrene spheres is only removed；
Heating removes the polystyrene spheres at top, completely reveals spaced metal mask structure；
Etching processing in vertical turnabout is carried out to the mask layer, makes the mask layer quilt not covered by metal mask
Etch away completely, retain the mask layer protected by the metal film layer, formed top by the metal mask cover from upper
The mask layer of tapered tilting nano column array form under；
It is handled using acid liquid corrosion, removes the metal mask covered at the top of the mask layer of the nano column array form；
Using MOCVD techniques, secondary epitaxy is carried out in a manner of vertical air inlet, it is raw between the adjacent nano column array
The ultraviolet LED epitaxial layer of the long overall thickness from bottom to up tapered tilting identical with the mask layer thickness；
Conductive layer and specular layer are sequentially depositing at the top of the ultraviolet LED epitaxial layer；
It is ultrasonically treated using buffered oxide etch liquid, erodes the mask layer.
Preferably, in the production method of above-mentioned UV LED chip, the buffering and nucleating layer are BN layers of heterojunction structure.
Preferably, in the production method of above-mentioned UV LED chip, the P-type conduction substrate and the p-type Ohmic contact
Conductive membrane layer is additionally provided between layer.
By foregoing description, the present invention provides above-mentioned UV LED chip, due to having inclination tapered from bottom to up
The ultraviolet LED epitaxial layer of formula nano column array form, the epitaxial layer of this form contain inclined the air gap so that adjacent
It is mutually communicated between inclined nano column array by air, utilizes the phenanthrene between nano column array and both interfaces of outside air
Alunite ear scatters and sloped sidewall is to the diffusing reflection effect of light, therefore can enhance the light extraction efficiency of ultraviolet LED, improves light efficiency
And brightness, additionally it is possible to enhance heat dissipation effect, above-mentioned ultraviolet LED and chip manufacture method provided by the invention are above-mentioned due to including
UV LED chip, therefore light extraction efficiency and the brightness of ultraviolet LED can be enhanced, additionally it is possible to enhance heat dissipation effect.
Description of the drawings
It in order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention, for those of ordinary skill in the art, without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is the schematic diagram of the first UV LED chip provided by the embodiments of the present application；
Fig. 2 is the schematic diagram of the production method of the first UV LED chip provided by the embodiments of the present application.
Specific embodiment
The core concept of the present invention is to provide a kind of UV LED chip, the production method of UV LED chip and a kind of purple
Outer LED can enhance light extraction efficiency and the brightness of ultraviolet LED, enhance heat dissipation effect.
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other without making creative work
Embodiment belongs to the scope of protection of the invention.
The first UV LED chip provided by the embodiments of the present application is as shown in Figure 1, Fig. 1 is provided by the embodiments of the present application
The schematic diagram of the first UV LED chip, the UV LED chip include Sapphire Substrate 1, the upper table of the Sapphire Substrate 1
Face can be, but not limited to carry out extension operation on its C face, be disposed with buffering and nucleating layer 2, AlN/AlGaN superlattices
Layer 3, N-type AlGaN layer 4, the ultraviolet LED epitaxial layer 5 with tilting nano column array form tapered from bottom to up, it is therein
Buffering and nucleating layer 2 may be employed Ecr plasma sputtering equipment and make, and AlN/AlGaN therein surpasses crystalline substance
Compartment 3 can have 0.8 μm to 1.4 μm of thickness, this is the structure of multicycle spaced distribution, may be configured as 20 week
Phase, in the AlN/AlGaN superlattice structures in each cycle comprising the AlN layers that thickness is 20nm to 35nm and thickness be 20nm extremely
The AlGaN layer of 35nm, after raising rapidly by the temperature inside consersion unit and maintain 1050 to 1080 DEG C, in the AlN/
The N-type AlGaN layer 4 of extension heavy doping on the surface of AlGaN superlattice layers 3, and optionally keep the thickness of N-type AlGaN layer 4
At 2 μm, mutually passed through by air between the active area considered in nano column array using the nano column array of tilting here
It is logical, and then using the total reflection between both interfaces and sloped sidewall to the diffusing reflection effect of light, to enhance ultraviolet LED
Light extraction efficiency, specifically, to can be, but not limited to include the Quantum Well that thickness is 52.5nm active for this ultraviolet LED epitaxial layer 5
The p-type AlGaN layer 503 and thickness that p-type AlGaN electronic barrier layers 502 that area 501 (MQWs), thickness are 60nm, thickness are 10nm
For the p-type GaN layer 504 of 100nm, the upper surface of the LED epitaxial layers 5 is also disposed with planar conductive layer 6 and minute surface
Reflecting layer 7, the thickness of the conductive layer 6 can be preferably 50nm, and the thickness of the specular layer 7 can be preferably 50nm,
The surface of the specular layer 7 is fixed with P-type conduction substrate 9 using articulamentum 8 is bonded, and forms electrical connection, used here
P-type conduction substrate can select silicon substrate or germanium substrate of good conductivity etc., be not intended to limit herein, P-type conduction lining
The upper surface at bottom 9 first can prepare the substrate with nano graph using mask lithography technique, then carry out in its surface
Epitaxial growth, is disposed with p-type ohmic contact layer 10 and P-type electrode 11, and the lower surface of the Sapphire Substrate 1 is set gradually
There are a N-type ohmic contact layer 12 and N-type electrode 13, the N-type ohmic contact layer 12 is using through the Sapphire Substrate 1, described
Buffering and nucleating layer 2, the metal contact bolt 14 of the AlN/AlGaN superlattice layers 3 are connected to the N-type AlGaN layer 4.
Can be that short wavelength UV LED chip, medium wave are ultraviolet it should be noted that the UV LED chip mentioned in this programme
LED chip or long wave ultraviolet LED chip, the light that this uv-LED device is sent depend on AlxGa1-xN/AlxGa1-xN surpasses crystalline substance
The size of Al components (x) in lattice, moreover, it is also possible to table top, epitaxial layer structure in the ultraviolet LED epitaxial chip structure
Side wall and external electrode surface form the passivation separation layer 17 in Fig. 1, prevent external environment to LED using Passivation Treatment
The corrosion of chip reduces influence of the leakage current to UV LED chip at table top and mesa sidewall, and is beneficial in LED epitaxial wafer have
The current expansion of source region reduces electric current pile up effect, improves the optical output power of LED component, can also be to metal contact bolt 14
Surface is insulated and Passivation Treatment, forms the insulating layer 16 of the circular cylindrical of coated metal contact bolt 14, prevents its side wall table
Directly current loop is formed between face and chip internal contact layer and causes short circuit, wherein, the passivation separation layer 17 and described
The thickness of insulating layer 16 can optimally be arranged to 10nm.
By foregoing description, the first UV LED chip provided by the embodiments of the present application, due to having from bottom to up
The ultraviolet LED epitaxial layer of tapered tilting nano column array form, the epitaxial layer of this form contain inclined the air gap,
So that being mutually communicated between adjacent inclined nano column array by air, nano column array and both boundaries of outside air are utilized
Fresnel scattering and sloped sidewall between face is to the diffusing reflection effect of light, therefore can enhance ultraviolet LED goes out light efficiency
Rate improves light efficiency and brightness, additionally it is possible to enhance heat dissipation effect.
Second of UV LED chip provided by the embodiments of the present application is on the basis of the first above-mentioned UV LED chip
On, further include following technical characteristic：
The buffering and nucleating layer are BN layers of heterojunction structure.
Here BN layers of the heterojunction structure that thickness is selected to be 10nm is can be, but not limited to, it is good with high-melting-point and thermal stability
Advantage, the AlN that is prepared under cryogenic conditions of the prior art to be substituted to buffer and nucleating layer, can effectively alleviate LED
Stress between epitaxial layer structure directly improves the quality of materials in epitaxial layer structure, improves the rate of crystal cross growth, drop
Low-dislocation-density by setting such buffering and nucleating layer, avoids the ultraviolet LED encapsulation in later stage vertical inverted structure
In the process, difficult the problem of removing that the Sapphire Substrate in LED epitaxial structure and buffer layer occur, reducing stripping process causes
Damage.
The third UV LED chip provided by the embodiments of the present application is on the basis of the first above-mentioned UV LED chip
On, further include following technical characteristic：
The bonding articulamentum is germanium layer, platinum layer, layer gold, aluminium layer or ITO layer.
It should be noted that the bonding of these species articulamentum adhesiveness is good, thermal conductivity is good, good conductivity, to light
Be heated not easy glide when absorbing less, bonding, this is only some of which preferred embodiment certainly, is not precluded from here using its other party
Case.
4th kind of UV LED chip provided by the embodiments of the present application, be it is above-mentioned the first to the third UV LED chip
In it is any on the basis of, further include following technical characteristic：
With continued reference to Fig. 1, conductive film is additionally provided between the P-type conduction substrate 9 and the p-type ohmic contact layer 10
Layer 18.
As long as in fact, have p-type ohmic contact layer can also, and add conductive membrane layer in this preferred embodiment, this
Also ohmic contact layer can be equivalent to, the effect of Ohmic contact can be enhanced, this conductive membrane layer can be, but not limited to select
With good conductivity and the superior graphene of heat dissipation effect, specifically, can be by carrying out the clear of early period to the P-type conduction substrate
The pollutant that pretreatments remove surface such as wash, then on the surface of the P-type conduction substrate, using MOCVD device, vacuum coating
Machine or low pressure magnetron sputtering apparatus carry out the deposition processes of conductive membrane layer, are laid with the two-dimentional material such as graphene film layer of individual layer
Material alleviates the stress between substrate and LED epitaxial layer structures caused by lattice mismatch and is served as a contrast in the P-type conduction
Continue to be provided with electrode contact layer structure in the p-type Ohmic contact layer surface of bottom one side, form external P-type electrode.
5th kind of UV LED chip provided by the embodiments of the present application is on the basis of above-mentioned 4th kind of UV LED chip
On, further include following technical characteristic：
The range of tilt angles of the nano column array be 45 ° to 60 °, and between adjacent nano column array gap hole
Footpath scope is 1nm to 5nm.
It should be noted that the nano column array with this size and shape parameter can ensure with better light extraction
Efficiency, brightness and heat dissipation effect.
A kind of ultraviolet LED provided by the embodiments of the present application, including such as any UV LED chip above.
Since this ultraviolet LED includes above-mentioned UV LED chip, light extraction efficiency can be enhanced, improve light efficiency and bright
Degree, and heat dissipation effect can be enhanced.
The production method of the first UV LED chip provided by the embodiments of the present application is as shown in Fig. 2, Fig. 2 is real for the application
The schematic diagram of the production method of the first UV LED chip of example offer is applied, this method comprises the following steps：
S1：Buffering and nucleating layer, AlN/AlGaN superlattice layers, N-type are set gradually in the upper surface of Sapphire Substrate
AlGaN layer；
Wherein, during preparing N-type AlGaN layer under the high temperature conditions, it is also contemplated that there is to ultraviolet for chip material
The reflection and absorption of light, also by combine epitaxial layer structure surface reduction processing technology while, to the N-type AlGaN layer
Surface carry out roughening treatment, direct N-type AlGaN layer circle in the vertical direction in enhancing nano-pillar ultraviolet LED epitaxial layer structure
Reflector efficiency at face so that the light extraction efficiency increase of LED epitaxial chips improves the light output intensity of LED.
S2：It is set in the N-type AlGaN layer upper surface with tilting nano column array form tapered from bottom to up
Ultraviolet LED epitaxial layer sets gradually planar conductive layer and specular layer in the upper surface of the ultraviolet LED epitaxial layer；
This ultraviolet LED epitaxial layer can be, but not limited to include Quantum well active district (MQWs), p-type AlGaN electronic blockings
Layer, p-type AlGaN layer, p-type GaN layer, wherein it is possible to the temperature in MOCVD consersion units is slowly decreased to 750 DEG C, and then
The AlGaN/AlGaN Quantum well active districts in 5 cycles of extension on the surface of the N-type AlGaN layer.Wherein, each cycle
The AlGaN well layer of 10nm thickness and the AlGaN potential barrier of 2.5nm thickness are contained in quantum well layer, is then had in the multiple quantum wells
Epitaxial p type AlGaN electronic barrier layers and p-type AlGaN layer successively are continued, then, by the life inside consersion unit in the surface of source region
Long temperature is slowly decreased, the epitaxial p type GaN layer on the surface of the p-type AlGaN layer, specifically, the p-type AlGaN layer choosing
It is the AlGaN materials that aluminium component is 0.59-0.60, since the lattice constant of the p-type AlGaN layer is than p-type AlGaN electronics
Barrier layer and p-type GaN layer will be big, but its energy gap will be small than p-type AlGaN electronic barrier layers and p-type GaN layer, has
The energy in hole in p-type AlGaN layer region is had adjusted to effect, improves the internal quantum efficiency of LED, wherein, the p-type AlGaN
Electronic barrier layer and p-type GaN layer also act as the effect of p type island region domain transmission of materials layer, moreover, the conductive layer is chosen as conduction
Property good indium tin oxide material, thickness can optimally be arranged to 50nm, during the conductive layer is grown, using difference
Multiple annealing process processing under temperature gradient to enhance the adhesion strength between epitaxial material and heterojunction structure, reduces interior
Portion's contact resistance is arranged to 50nm the thickness optimization in the reflecting layer, and carries out the processing of the special process such as surface roughening, described
Metal aluminium material can be used in reflecting layer, enhances the reflecting effect of light, improves the amount of light of LED chip, in addition, positioned at inclined
Electrode zone at the top of miniature nano-pillar LED epitaxial layer structures, the structure collectively constituted by conductive layer and specular layer, energy
It is enough preferably to serve as the intermediate contact layer for playing function served as bridge for being connected with each other external electrode structure with internal epitaxial layer structure
Medium.
S3：P-type ohmic contact layer and P-type electrode are set gradually in the upper surface of P-type conduction substrate；
S4：The surface of the specular layer is fixed to the P-type conduction substrate using articulamentum is bonded；
Specifically, the P-type conduction substrate after inversion is directly tipped upside down on Sapphire Substrate ultraviolet LED epitaxial layer structure,
And then complete the electrical connection process of two kinds of epitaxial layer structures described above, this P-type conduction substrate can be P-type silicon substrate or
P-type germanium substrate, is not intended to limit herein.
S5：N-type ohmic contact layer and N-type electrode, described N-type ohm are set gradually in the lower surface of the Sapphire Substrate
Contact layer is utilized to be contacted through the Sapphire Substrate, the buffering and nucleating layer, the metal of the AlN/AlGaN superlattice layers
It tethers and is connected to the N-type AlGaN layer.
Specifically, photoetching, dry etching or wet corrosion technique may be employed, to institute since the Sapphire Substrate of bottom
It states ultraviolet LED epitaxial slice structure to perform etching or hollow processing, forms one of groove structure, the N-type electrode to carry out internal connects
The preparation of structure is touched, wherein, many places (such as at three) groove structure is set at equal intervals, and etching depth is from the sapphire at top
Substrate starts to etch from lower to upper until exposing N-type AlGaN layer, by strictly controlling the etching speed in etching process
Rate also ensures that and only Sapphire Substrate and buffer layer region is etched completely so that the current expansion on vertical direction
Faster, shorten the heat-transfer path between pyrotoxin and the external world in LED chip, radiating efficiency higher and improve LED can
By property, preferably the N-type AlGaN layer can not etched or partial etching is handled, reduce deep etching process to extension
The damage of light-emitting zone in piece improves the light output intensity of LED；
For the making of metal contact bolt, it can first pass through and annular passivation and insulation position are carried out to the inner wall of groove structure
Reason forms a kind of insulation layer structure toward groove structure the inside filling insulating dielectric materials, then fills metal inside again
Or alloy material, corresponding interior contact electrode is formed, a kind of metal contact stud structure is formed, then in the ohmic contact layer
It is upper setting with the corresponding external electrode of interior contact electrode, and the other end of set multiple external electrodes then with outside
Metal wiring layer or plain conductor in portion's baseplate heat sink structure are connected, wherein, it carrying out the deposition of external electrode, steaming
During plating, external P-type electrode and N-type electrode are subjected to roughening treatment by using Film patterning treatment technology, and optimize it
The mode and bond strength of Ohmic contact, in conjunction with the face contact material class at transparent electrode technology of preparing and optimization electrode
Type, and then the good Au/Sn alloys of thermal conductivity are selected as electrode contact material, it timely and effectively will be inside LED chip
Heat transfer to outside, and then increase contact electrode effective area, reduce contact resistance so that CURRENT DISTRIBUTION evenly,
Current expansion is more effective.
In said program, the ultraviolet LED epitaxial layer structure of the nano column array with inclined the air gap is formed, also
It ensures and is mutually run through by air between adjacent nano column array, also assure the table of nano column array in the vertical direction
The hanging setting of the conductive layer in later stage is carried out on face, on the one hand since the active area in inclined nano-pillar is the luminous zone of LED
Domain, and then utilize the total reflection between the active area and both interfaces of outside air being located in nano column array and inclined side
The diffusing reflection effect of wall enhances the light extraction efficiency of ultraviolet LED, on the other hand, due in Quantum well active district and LED chip
Main pyrotoxin, by setting this miniature nano-pillar ultraviolet LED epitaxial layer structure containing inclined the air gap, also
The thermal diffusion path between pyrotoxin and outside air can be caused to shorten, LED chip thermal diffusion is accelerated, and preferably avoids chip
It fails due to overheat.
The production method of second of UV LED chip provided by the embodiments of the present application is in the first above-mentioned ultraviolet LED core
On the basis of the production method of piece, following technical characteristic is further included：
Described set in the N-type AlGaN layer upper surface has tilting nano column array form tapered from bottom to up
Ultraviolet LED epitaxial layer include：
In the upper surface deposition mask layer of the N-type AlGaN layer, the mask layer is SiO2Or Si3N4Or nickel；
The polystyrene spheres of individual layer are deposited on the mask layer using PECVD modes, the mask layer is made to gather with described
Point contact is formed between styrene ball；
Heat pre-treatment is carried out, using inductively coupled plasma etching technique, collapses the polystyrene spheres fusing
And become smaller, it is contacted with the mask layer forming face, exposes the mask layer between the adjacent polystyrene spheres；
Using metal evaporation technique, deposited metal is thin on the surface of the polystyrene spheres and the mask layer being exposed
Film layer；
Using toluene ultrasonic processing technique, the metal film layer on the polystyrene spheres is only removed；
Heating removes the polystyrene spheres at top, completely reveals spaced metal mask structure；
Etching processing in vertical turnabout is carried out to the mask layer, makes the mask layer quilt not covered by metal mask
Etch away completely, retain the mask layer protected by the metal film layer, formed top by the metal mask cover from upper
The mask layer of tapered tilting nano column array form under；
It is handled using acid liquid corrosion, removes the metal mask covered at the top of the mask layer of the nano column array form；
Using MOCVD techniques, secondary epitaxy is carried out in a manner of vertical air inlet, it is raw between the adjacent nano column array
The ultraviolet LED epitaxial layer of the long overall thickness from bottom to up tapered tilting identical with the mask layer thickness；
Conductive layer and specular layer are sequentially depositing at the top of the ultraviolet LED epitaxial layer；
It is ultrasonically treated using buffered oxide etch liquid, erodes the mask layer.
The production method of the third UV LED chip provided by the embodiments of the present application is in above-mentioned second of ultraviolet LED core
On the basis of the production method of piece, following technical characteristic is further included：
The buffering and nucleating layer are BN layers of heterojunction structure.
Here BN layers of the heterojunction structure that thickness is selected to be 10nm is can be, but not limited to, it is good with high-melting-point and thermal stability
Advantage to substitute the AlN prepared under cryogenic conditions of the prior art bufferings and nucleating layer, can effectively be alleviated outside LED
Prolong the stress between layer structure, directly improve the quality of materials in epitaxial layer structure, improve the rate of crystal cross growth, reduce
Dislocation density by the BN being set to buffer and nucleating layer, is avoided in later stage vertical inverted structure ultraviolet LED encapsulation process,
Difficult the problem of removing that Sapphire Substrate and buffer layer in LED epitaxial structure occur, weaken and be likely to occur in stripping process
The harm such as damage.
The production method of 4th kind of UV LED chip provided by the embodiments of the present application, is in above-mentioned second of ultraviolet LED core
On the basis of the production method of piece, following technical characteristic is further included：
Conductive membrane layer is additionally provided between the P-type conduction substrate and the p-type ohmic contact layer.
As long as in fact, have p-type ohmic contact layer can also, and add conductive membrane layer in this preferred embodiment, this
Ohmic contact layer can also be equivalent to, Ohmic contact effect can be enhanced, this conductive membrane layer can be, but not limited to select and lead
The electrically good and superior graphene of heat dissipation effect, specifically, cleaning that can be by carrying out early period to the P-type conduction substrate etc.
Pretreatment removes the pollutant on surface, then on the surface of the P-type conduction substrate, using MOCVD device, vacuum coating equipment or
Person's low pressure magnetron sputtering apparatus carries out the deposition processes of conductive membrane layer, is laid with the two-dimensional materials such as the graphene film layer of individual layer,
The stress caused by lattice mismatch between substrate and LED epitaxial layer structures is alleviated, and in the P-type conduction substrate one side
P-type Ohmic contact layer surface on continue to be provided with electrode contact layer structure, form external P-type electrode.
The foregoing description of the disclosed embodiments enables professional and technical personnel in the field to realize or use the present invention.
A variety of modifications of these embodiments will be apparent for those skilled in the art, it is as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention
The embodiments shown herein is not intended to be limited to, and is to fit to and the principles and novel features disclosed herein phase one
The most wide scope caused.
Claims (10)
1. a kind of UV LED chip, which is characterized in that including Sapphire Substrate, the upper surface of the Sapphire Substrate is set successively
It is equipped with buffering and nucleating layer, AlN/AlGaN superlattice layers, N-type AlGaN layer, there is tilting nano-pillar tapered from bottom to up
The ultraviolet LED epitaxial layer of array format, the upper surface of the ultraviolet LED epitaxial layer be also disposed with planar conductive layer and
Specular layer, the surface of the specular layer are fixed with P-type conduction substrate, the P-type conduction lining using articulamentum is bonded
The upper surface at bottom is disposed with p-type ohmic contact layer and P-type electrode, and the lower surface of the Sapphire Substrate is disposed with N
Type ohmic contact layer and N-type electrode, the N-type ohmic contact layer are utilized through the Sapphire Substrate, the buffering and nucleation
Layer, the metal contact bolt of the AlN/AlGaN superlattice layers are connected to the N-type AlGaN layer.
2. UV LED chip according to claim 1, which is characterized in that it is described buffering and nucleating layer be heterojunction structure BN
Layer.
3. UV LED chip according to claim 1, which is characterized in that the bonding articulamentum is germanium layer, platinum layer, gold
Layer, aluminium layer or ITO layer.
4. according to claim 1-3 any one of them UV LED chips, which is characterized in that the P-type conduction substrate and described
Conductive membrane layer is additionally provided between p-type ohmic contact layer.
5. UV LED chip according to claim 4, which is characterized in that the range of tilt angles of the nano column array
For 45 ° to 60 °, and the pore diameter range in gap is 1nm to 5nm between adjacent nano column array.
6. a kind of ultraviolet LED, which is characterized in that including such as claim 1-5 any one of them UV LED chip.
7. a kind of production method of UV LED chip, which is characterized in that including：
Buffering and nucleating layer, AlN/AlGaN superlattice layers, N-type AlGaN layer are set gradually in the upper surface of Sapphire Substrate；
In the N-type AlGaN layer upper surface, the ultraviolet LED with tilting nano column array form tapered from bottom to up is set
Epitaxial layer sets gradually planar conductive layer and specular layer in the upper surface of the ultraviolet LED epitaxial layer；
P-type ohmic contact layer and P-type electrode are set gradually in the upper surface of P-type conduction substrate；
The surface of the specular layer is fixed to the P-type conduction substrate using articulamentum is bonded；
N-type ohmic contact layer and N-type electrode, the N-type ohmic contact layer are set gradually in the lower surface of the Sapphire Substrate
It is connected using through the Sapphire Substrate, the buffering and nucleating layer, the metal contact bolt of the AlN/AlGaN superlattice layers
To the N-type AlGaN layer.
8. the production method of UV LED chip according to claim 7, which is characterized in that described in the N-type AlGaN
Layer upper surface sets the ultraviolet LED epitaxial layer with tilting nano column array form tapered from bottom to up to include：
In the upper surface deposition mask layer of the N-type AlGaN layer, the mask layer is SiO2Or Si3N4Or nickel；
The polystyrene spheres of individual layer are deposited on the mask layer using PECVD modes, make the mask layer and the polyphenyl second
Point contact is formed between alkene ball；
Heat pre-treatment is carried out, using inductively coupled plasma etching technique, the polystyrene spheres fusing is made to collapse and become
It is small, it is contacted with the mask layer forming face, exposes the mask layer between the adjacent polystyrene spheres；
Using metal evaporation technique on the polystyrene spheres and the surface of mask layer being exposed deposited metal film layer；
Using toluene ultrasonic processing technique, the metal film layer on the polystyrene spheres is only removed；
Heating removes the polystyrene spheres at top, completely reveals spaced metal mask structure；
Etching processing in vertical turnabout is carried out to the mask layer, makes the mask layer not covered by metal mask complete
It etches away, retains the mask layer protected by the metal film layer, form top and covered from top to bottom by the metal mask
The mask layer of tapered tilting nano column array form；
It is handled using acid liquid corrosion, removes the metal mask covered at the top of the mask layer of the nano column array form；
Using MOCVD techniques, secondary epitaxy is carried out in a manner of vertical air inlet, is grown between the adjacent nano column array total
The ultraviolet LED epitaxial layer of the thickness from bottom to up tapered tilting identical with the mask layer thickness；
Conductive layer and specular layer are sequentially depositing at the top of the ultraviolet LED epitaxial layer；
It is ultrasonically treated using buffered oxide etch liquid, erodes the mask layer.
9. the production method of UV LED chip according to claim 7, which is characterized in that the buffering and nucleating layer are
BN layers of heterojunction structure.
10. the production method of UV LED chip according to claim 7, which is characterized in that the P-type conduction substrate and
Conductive membrane layer is additionally provided between the p-type ohmic contact layer.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108565322A (en) * | 2018-06-01 | 2018-09-21 | 广东工业大学 | A kind of LED epitaxial chips and a kind of preparation method of LED epitaxial chips |
| CN108598228A (en) * | 2018-06-29 | 2018-09-28 | 广东工业大学 | Outer LED vertical chip encapsulating structure of a kind of high-power purple and preparation method thereof |
| CN108666397A (en) * | 2018-06-29 | 2018-10-16 | 广东工业大学 | A kind of ultraviolet LED thin-film LED and preparation method thereof |
| CN108682724A (en) * | 2018-06-01 | 2018-10-19 | 广东工业大学 | A kind of LED epitaxial chips and a kind of preparation method of LED epitaxial chips |
| CN109378367A (en) * | 2018-10-30 | 2019-02-22 | 广东工业大学 | A kind of light emitting diode and preparation method thereof |
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101604717A (en) * | 2009-07-15 | 2009-12-16 | 山东华光光电子有限公司 | A kind of vertical GaN-based LED chip and preparation method thereof |
| CN102683522A (en) * | 2012-06-04 | 2012-09-19 | 中国科学院半导体研究所 | Manufacture method of light-emitting diode with air bridge structure |
| CN102779915A (en) * | 2012-08-13 | 2012-11-14 | 厦门市三安光电科技有限公司 | Inverted light-emitting diode and method for fabricating same |
| CN103730545A (en) * | 2013-12-26 | 2014-04-16 | 广州有色金属研究院 | Manufacturing method of AlGaN-based vertical structure deep ultraviolet LED |
| CN103928600A (en) * | 2013-01-14 | 2014-07-16 | 上海蓝光科技有限公司 | LED and manufacturing method thereof |
| CN106299050A (en) * | 2016-11-17 | 2017-01-04 | 河北工业大学 | A kind of deep ultraviolet semiconductor light-emitting-diode and preparation method thereof |
| CN108133993A (en) * | 2018-01-30 | 2018-06-08 | 广东工业大学 | A kind of ultraviolet LED vertical chip structure |
| CN207800630U (en) * | 2018-01-31 | 2018-08-31 | 广东工业大学 | A kind of UV LED chip and a kind of ultraviolet LED |
| CN208208784U (en) * | 2018-01-30 | 2018-12-07 | 广东工业大学 | A kind of ultraviolet LED vertical chip structure |
-
2018
- 2018-01-31 CN CN201810096603.4A patent/CN108110105A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101604717A (en) * | 2009-07-15 | 2009-12-16 | 山东华光光电子有限公司 | A kind of vertical GaN-based LED chip and preparation method thereof |
| CN102683522A (en) * | 2012-06-04 | 2012-09-19 | 中国科学院半导体研究所 | Manufacture method of light-emitting diode with air bridge structure |
| CN102779915A (en) * | 2012-08-13 | 2012-11-14 | 厦门市三安光电科技有限公司 | Inverted light-emitting diode and method for fabricating same |
| CN103928600A (en) * | 2013-01-14 | 2014-07-16 | 上海蓝光科技有限公司 | LED and manufacturing method thereof |
| CN103730545A (en) * | 2013-12-26 | 2014-04-16 | 广州有色金属研究院 | Manufacturing method of AlGaN-based vertical structure deep ultraviolet LED |
| CN106299050A (en) * | 2016-11-17 | 2017-01-04 | 河北工业大学 | A kind of deep ultraviolet semiconductor light-emitting-diode and preparation method thereof |
| CN108133993A (en) * | 2018-01-30 | 2018-06-08 | 广东工业大学 | A kind of ultraviolet LED vertical chip structure |
| CN208208784U (en) * | 2018-01-30 | 2018-12-07 | 广东工业大学 | A kind of ultraviolet LED vertical chip structure |
| CN207800630U (en) * | 2018-01-31 | 2018-08-31 | 广东工业大学 | A kind of UV LED chip and a kind of ultraviolet LED |
Non-Patent Citations (1)
| Title |
|---|
| 王军喜;闫建昌;郭亚楠;张韵;田迎冬;朱邵歆;陈翔;孙莉莉;李晋闽;: "氮化物深紫外LED研究新进展", 中国科学:物理学 力学 天文学, no. 06 * |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108565322A (en) * | 2018-06-01 | 2018-09-21 | 广东工业大学 | A kind of LED epitaxial chips and a kind of preparation method of LED epitaxial chips |
| CN108682724A (en) * | 2018-06-01 | 2018-10-19 | 广东工业大学 | A kind of LED epitaxial chips and a kind of preparation method of LED epitaxial chips |
| CN108598228A (en) * | 2018-06-29 | 2018-09-28 | 广东工业大学 | Outer LED vertical chip encapsulating structure of a kind of high-power purple and preparation method thereof |
| CN108666397A (en) * | 2018-06-29 | 2018-10-16 | 广东工业大学 | A kind of ultraviolet LED thin-film LED and preparation method thereof |
| CN109378367A (en) * | 2018-10-30 | 2019-02-22 | 广东工业大学 | A kind of light emitting diode and preparation method thereof |
| CN109545928A (en) * | 2018-12-27 | 2019-03-29 | 广东工业大学 | A kind of positive assembling structure of deep ultraviolet LED epitaxial chip |
| CN109545928B (en) * | 2018-12-27 | 2020-10-23 | 广东工业大学 | Deep ultraviolet LED epitaxial chip normal mounting structure |
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| CN111864019A (en) * | 2020-07-10 | 2020-10-30 | 武汉大学 | Flip light-emitting diode with embedded scattering layer and preparation method thereof |
| CN111864019B (en) * | 2020-07-10 | 2021-11-30 | 武汉大学 | Flip light-emitting diode with embedded scattering layer and preparation method thereof |
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