CN108565322A - A kind of LED epitaxial chips and a kind of preparation method of LED epitaxial chips - Google Patents
A kind of LED epitaxial chips and a kind of preparation method of LED epitaxial chips Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
Abstract
The invention discloses a kind of LED epitaxial chips, it includes multiple round table-like or prism-frustum-shaped luminescence unit to be mainly used for luminous functional layer in the LED epitaxial chips, and the air gap is formed between multiple luminescence units.Luminescence unit has inclined side wall at this time.When luminescence unit launches light, which can occur scattering effect between luminescence unit and both interfaces of the air gap, to increase the light emission rate of LED epitaxial chips；Simultaneously because the air gap there are what heat caused by luminescence unit can be exceedingly fast by the air gap to pass out LED epitaxial chips, to increase the heat dissipation effect of LED epitaxial chips.A kind of preparation method of LED epitaxial chips provided by the present invention, LED epitaxial chips prepared by this method equally have above-mentioned advantageous effect.
Description
Technical field
The present invention relates to LED technology fields, more particularly to a kind of LED epitaxial chips and a kind of system of LED epitaxial chips
Preparation Method.
Background technology
As the continuous progress of science and technology, LED (light emitting diode) technology have obtained great development in recent years.Compared to such as biography
The lighting apparatus of system, LED has many advantages, such as that long lifespan, high efficient and reliable, brightness of illumination are uniform, is free of noxious material, extensive
It applies in the field of the people's daily life such as medical treatment, illumination.
For LED illumination equipment, most important light-emitting component is LED epitaxial chips.It is hollow in LED epitaxial chips
Cave and electronics both carriers can light that is compound and sending out certain wavelength, and LED epitaxial chips also can while working
Generate certain heat.
In the prior art, the light emission rate of LED epitaxial chips is generally relatively low, while its heat dissipation performance is also universal poor.
Invention content
The object of the present invention is to provide a kind of LED epitaxial chips, can be effectively increased LED epitaxial chip light extraction efficiencies
Increase its heat dissipation performance simultaneously；Another object of the present invention is to provide a kind of preparation methods of LED epitaxial chips, pass through the party
LED epitaxial chips prepared by method can increase its heat dissipation performance while being effectively increased LED epitaxial chip light extraction efficiencies.
In order to solve the above technical problems, the present invention provides a kind of LED epitaxial chips, the LED epitaxial chips include：
First substrate；
Positioned at the transition zone of first substrate first surface；
Deviate from the functional layer on first one side of substrate surface positioned at the transition zone；Wherein, the functional layer includes more
A round table-like and/or prism-frustum-shaped luminescence unit is formed with the air gap between multiple luminescence units；
The second substrate being fixedly connected backwards to first one side of substrate surface with the functional layer；
The first electrode being electrically connected with described luminescence unit one end, the second electricity being electrically connected with the luminescence unit other end
Pole.
Optionally, first substrate is Sapphire Substrate, and second substrate is p-type silicon substrate；
The luminescence unit includes：
Round table-like and/or prism-frustum-shaped Quantum well active district；
Positioned at the Quantum well active district towards first one side of substrate surface, and be fixedly connected with the transition zone
First N-shaped epitaxial layer；
Positioned at the Quantum well active district towards second one side of substrate surface, and it is fixedly connected with second substrate
P-type epitaxial layer.
Optionally, the functional layer further includes：
The second N-shaped epitaxial layer between the luminescence unit and the transition zone；Wherein, the second N-shaped extension
Layer is in contact and is fixedly connected towards second one side of substrate surface with the transition zone, the first N-shaped epitaxial layer and institute
The second N-shaped epitaxial layer is stated to be in contact and be fixedly connected towards second one side of substrate surface；It is electric in the second N-shaped epitaxial layer
Sub- concentration is more than electron concentration in the first N-shaped epitaxial layer.
Optionally, the p-type epitaxial layer includes：
Positioned at the Quantum well active district towards the p-type AlGaN layer on second one side of substrate surface；
Positioned at the p-type AlGaN layer towards second one side of substrate surface, and be fixedly connected with second substrate
P-type GaN layer.
Optionally, the transition zone includes：
Positioned at first substrate towards the buffer layer on second one side of substrate surface；
Positioned at the buffer layer towards second one side of substrate surface, and with the functional layer towards first substrate
The superlattice layer that one side surface is fixedly connected；
The buffer layer includes：
Positioned at first substrate towards the first Al on second one side of substrate surface2O3Layer；
Positioned at the first Al2O3AlON layer of the layer towards second one side of substrate surface；
Positioned at the described AlON layers AlN layer towards second one side of substrate surface；
Positioned at described AlN layers the 2nd Al towards second one side of substrate surface2O3Layer；Wherein, the 2nd Al2O3
Layer is in contact and is fixedly connected with the superlattice layer；Wherein, the first Al2O3Layer and the 2nd Al2O3The thickness of layer is equal
No more than 10nm.
Optionally, the first electrode is located at first substrate second surface opposite with the first surface, described
First substrate is provided with interconnected through-hole with the transition zone, and conductive plugs are provided in the through-hole；Wherein, the conduction
One end of bolt is in contact with first electrode, and the other end of the conductive plugs and the functional layer are towards first one side of substrate
Surface is in contact；
The second electrode is located at second substrate backwards to first one side of substrate surface.
The present invention also provides a kind of preparation method of LED epitaxial chips, the method includes：
In one surface epitaxial growth transition zone of the first substrate；
In the transition zone off-balancesheet epitaxial growth functional layer；Wherein, the functional layer includes multiple columnar luminescence units, more
It is formed with the air gap between a luminescence unit；
The luminescence unit is etched into round table-like and/or prism-frustum-shaped luminescence unit；
Second substrate, one surface and the function layer surface are mutually bonded；
Described luminescence unit one end is electrically connected with first electrode, and the luminescence unit other end and second electrode is electric
Connection, the LED epitaxial chips are made.
Optionally, described to include in the transition zone off-balancesheet epitaxial growth functional layer：
A shielding layer is deposited in the transition layer surface；
A single layer spherical particle is deposited in the masking layer surface；
The spherical particle is heated and etches, so that the spherical particle collapses and expose the of the masking layer surface
One predeterminable area；
Metal evaporation is carried out to the first predeterminable area of the masking layer surface, in the first pre- of the masking layer surface
If region surface forms the first mask layer；
The spherical particle after heating collapse is to remove the spherical particle；
The shielding layer is etched to form column type array in the shielding layer, is formed with around the column type array multiple
Cylindrical interior volume；
Pass through first mask layer of column type array top described in erosion removal；
The first N-shaped of epitaxial growth epitaxial layer, Quantum well active district and p-type epitaxial layer successively in the inner cavity, to be formed
The luminescence unit；
After forming the luminescence unit, the shielding layer is removed by BOE solution.
Optionally, described to include in one surface epitaxial growth transition zone of the first substrate：
It is sequentially prepared the first Al on one surface of the Sapphire Substrate2O3Layer, AlON layers, AlN layers and the 2nd Al2O3Layer；Its
In, the first Al2O3Layer and the 2nd Al2O3The thickness of layer is no more than 10nm；
In the 2nd Al2O3Layer surface epitaxial growth superlattice layer；
It is described to include in the transition layer surface epitaxial growth functional layer：
The functional layer described in the epitaxial growth of the superlattice layer surface.
Optionally, described the luminescence unit is etched into round table-like and/or prism-frustum-shaped luminescence unit to include：
On the luminescence unit surface, the second mask layer is set；
By the second predeterminable area in the second mask layer described in the photolithography plate photoengraving with predetermined pattern, described in exposure
The corresponding luminescence unit of second predeterminable area；
The corrosion corresponding luminescence unit of the second predeterminable area, by the luminescence unit corrode at it is round table-like and/
Or the luminescence unit of prism-frustum-shaped.
A kind of LED epitaxial chips provided by the present invention, being mainly used for luminous functional layer in the LED epitaxial chips includes
Multiple round table-like or prism-frustum-shaped luminescence unit, the air gap is formed between multiple luminescence units.Luminescence unit has at this time
There is inclined side wall.When luminescence unit launches light, the light can luminescence unit and both interfaces of the air gap it
Between scattering effect occurs, to increase the light emission rate of LED epitaxial chips；Simultaneously because the air gap there are luminescence units to be produced
What raw heat can be exceedingly fast by the air gap passes out LED epitaxial chips, to increase the heat dissipation effect of LED epitaxial chips.
A kind of preparation method of LED epitaxial chips provided by the present invention, LED epitaxial chips prepared by this method equally have
There is above-mentioned advantageous effect, is no longer repeated herein.
Description of the drawings
It, below will be to embodiment or existing for the clearer technical solution for illustrating the embodiment of the present invention or the prior art
Attached drawing is briefly described needed in technology description, it should be apparent that, the accompanying drawings in the following description is only this hair
Some bright embodiments for those of ordinary skill in the art without creative efforts, can be with root
Other attached drawings are obtained according to these attached drawings.
A kind of structural schematic diagram for LED epitaxial chips that Fig. 1 is provided by the embodiment of the present invention；
A kind of structural schematic diagram for specific LED epitaxial chips that Fig. 2 is provided by the embodiment of the present invention；
The structural schematic diagram for the specific LED epitaxial chips of another kind that Fig. 3 is provided by the embodiment of the present invention；
The structural schematic diagram for another specific LED epitaxial chip that Fig. 4 is provided by the embodiment of the present invention；
A kind of flow chart for LED epitaxial chips preparation method that Fig. 5 is provided by the embodiment of the present invention；
A kind of flow chart for specific LED epitaxial chips preparation method that Fig. 6 is provided by the embodiment of the present invention；
The flow chart for the specific LED epitaxial chip preparation methods of another kind that Fig. 7 is provided by the embodiment of the present invention.
In figure：1. the first substrate, 2. second substrates, 3. transition zones, 31. buffer layers, 311. the oneth Al2O3Layer, 312.AlON
Layer, 313.AlN layers, 314. the 2nd Al2O3Layer, 32. superlattice layers, 4. functional layers, 41. second N-shaped epitaxial layers, 42. metallic conductions
Layer, 43. specular layers, 5. luminescence units, 51. first N-shaped epitaxial layers, 52. Quantum well active districts, 53.p types epitaxial layer,
531.p types AlGaN layer, 532.p types GaN layer, 54. electronic barrier layers, 6. the air gaps, 7. first electrodes, 71.n type ohms connect
Contact layer, 8. second electrodes, 81.p types ohmic contact layer, 9. conductive plugs, 91. internal insulating layers.
Specific implementation mode
Core of the invention is to provide a kind of LED epitaxial chips.In the prior art, LED epitaxial chips are generally divided into just
Fill LED chip, flip LED chips, vertical LED chip etc..The difference of LED chip structure mainly influences its light extraction efficiency, heat dissipation
The parameters such as performance.And at this stage, the problems such as generally existing light extraction efficiency, heat dissipation performance is poor.
And a kind of LED epitaxial chips provided by the present invention, it is mainly used for luminous functional layer packet in the LED epitaxial chips
Multiple round table-like or prism-frustum-shaped luminescence unit is included, the air gap is formed between multiple luminescence units.Luminescence unit at this time
With inclined side wall.When luminescence unit launches light, which can be in luminescence unit and both interfaces of the air gap
Between scattering effect occurs, to increase the light emission rate of LED epitaxial chips；Simultaneously because the air gap there are luminescence unit institutes
What the heat of generation can be exceedingly fast by the air gap passes out LED epitaxial chips, to increase the heat dissipation effect of LED epitaxial chips
Fruit.
In order to enable those skilled in the art to better understand the solution of the present invention, with reference to the accompanying drawings and detailed description
The present invention is described in further detail.Obviously, described embodiments are only a part of the embodiments of the present invention, rather than
Whole embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art are not making creative work premise
Lower obtained every other embodiment, shall fall within the protection scope of the present invention.
Referring to FIG. 1, a kind of structural schematic diagram for LED epitaxial chips that Fig. 1 is provided by the embodiment of the present invention.
Referring to Fig. 1, in embodiments of the present invention, the LED epitaxial chips include the first substrate 1；Positioned at first lining
The transition zone 3 of 1 first surface of bottom；Deviate from the functional layer 4 of 1 one side surface of the first substrate positioned at the transition zone 3；Wherein,
The functional layer 4 includes multiple round table-like and/or prism-frustum-shaped luminescence unit 5, is formed between multiple luminescence units 5 free
Gas gap 6；The second substrate 2 being fixedly connected backwards to 1 one side surface of the first substrate with the functional layer 4；It shines with described
The first electrode 7 of 5 one end of unit electrical connection, the second electrode 8 being electrically connected with 5 other end of the luminescence unit.
Above-mentioned first substrate 1 is usually Sapphire Substrate in embodiments of the present invention, and the second substrate 2 is usual at this time accordingly
For p-type silicon substrate.Above-mentioned first substrate 1 usually requires to be oppositely arranged with the second substrate 2, i.e. the first substrate 1 has towards second
Substrate 2 and backwards 2 one side surface of the second substrate, corresponding second substrate 2 have towards the first substrate 1 and backwards to the first lining
1 one side surface of bottom.Wherein the first substrate 1 towards 2 one side surface of the second substrate be above-mentioned first surface.
Preferably, in embodiments of the present invention, the first surface of the first substrate 1 is etched with nano graph in advance.I.e.
In embodiments of the present invention, the techniques such as mask, photoetching may be used, in the first substrate 1 towards 2 side surface etch of the second substrate
Go out nano graph, there is the Sapphire Substrate (NPSS) of nano graph to which surface is made in the first substrate 1.By in the first lining
The first surface etching nano-pattern at bottom 1 can form air column in the first surface of the first substrate 1, follow-up to effectively reduce
The stress and dislocation of the film layer of growth on 1 surface of the first substrate.In embodiments of the present invention, for the specific nanometer figure of etching
Case is simultaneously not specifically limited, and is determined on a case-by-case basis.It is equally same for the specific thickness of the first substrate 1 in embodiments of the present invention
Sample is not specifically limited.
Above-mentioned second substrate 2 is usually p-type silicon substrate in embodiments of the present invention.I.e. in common silicon based substrates, lead to
The techniques such as impurity diffusion, doping and ion implantation are crossed, sets silicon based substrates to p-type silicon substrate.In the embodiment of the present invention
In, the parameters such as concentration and its thickness for impurity in p-type silicon substrate can be determined on a case-by-case basis, in the embodiment of the present invention
In and be not specifically limited.
In embodiments of the present invention, the first surface of first substrate 1 is provided with transition zone 3.The work of the transition zone 3
The problems such as even solving the functional layer 4 for shining and the dislocation between the first substrate 1, lattice mismatch is reduced with being, from
And larger deformation will not occur in the production process for the structure of assurance function layer 4.Particular content in relation to transition zone 3 will be under
It states in inventive embodiments and is described in detail, no longer repeated herein.
In embodiments of the present invention, the transition zone 3 is provided with functional layer 4 backwards to 1 one side surface of the first substrate.
Above-mentioned functional layer 4 is mainly used for shining in embodiments of the present invention.Specifically, the functional layer 4 includes multiple circles
The luminescence unit 5 of mesa-shaped and/or prism-frustum-shaped is formed with the air gap 6 between multiple luminescence units 5；The functional layer 4 is carried on the back
It is fixedly connected to 1 one side surface of the first substrate with second substrate 2.
Above-mentioned luminescence unit 5 is round-like structure either prism-frustum-shaped structure, and positioned at transition zone 3 and the second substrate 2 it
Between.Certainly, due to that can be provided with multiple luminescence units 5 in embodiments of the present invention, shape between different luminescence units 5 can be with
It is different.Under normal conditions, one end of luminescence unit 5 is fixed towards 2 one side surface of the second substrate with the transition zone 3 and is connected
It connects, the other end of the luminescence unit 5 is fixedly connected with second substrate 2 towards 1 one side surface of the first substrate；On i.e.
Luminescence unit 5 is stated usually to be vertically arranged among LED epitaxial chips.Certainly, above-mentioned luminescence unit 5 can also tilt or level is set
It sets in LED epitaxial chips, specific setting method in embodiments of the present invention and is not specifically limited.
Specifically, in embodiments of the present invention, the luminescence unit 5, which includes round table-like and/or prism-frustum-shaped Quantum Well, to be had
Source region 52；Positioned at the Quantum well active district 52 towards 1 one side surface of the first substrate, and fixes and connect with the transition zone 3
The the first N-shaped epitaxial layer 51 connect；Positioned at the Quantum well active district 52 towards 2 one side surface of the second substrate, and with it is described
The p-type epitaxial layer 53 that second substrate 2 is fixedly connected.
In embodiments of the present invention, above-mentioned luminescence unit 5 can be only Quantum well active district 52, i.e., above-mentioned luminescence unit
5 height can be identical as the thickness of Quantum well active district 52.But since the thickness of Quantum well active district 52 is often no more than
100nm, if only making the luminescence unit 5 that thickness is less than 100nm, technology realization is upper relatively difficult, i.e., only by Quantum Well
It is relatively difficult in terms of process implementing that active area 52 is made as luminescence unit 5, so in embodiments of the present invention, in order to reduce
The manufacture difficulty of LED epitaxial chips, preferably, above-mentioned luminescence unit 5 can extend to the first N-shaped epitaxial layer 51 and p
Type epitaxial layer 53；I.e. above-mentioned luminescence unit 5 may include the first N-shaped epitaxial layer 51, p-type epitaxial layer 53 and Quantum well active district
52, to increase the height of luminescence unit 5.
Above-mentioned Quantum well active district 52 is located at the middle part of above-mentioned luminescence unit 5, whole structure in a circular table shape either terrace with edge
Shape structure.In embodiments of the present invention, the structure of the Quantum well active district 52 is usually in periodic arrangement, and ingredient is
The multi-quantum well active region 52 of AlGaN/AlGaN.Specifically, in embodiments of the present invention, above-mentioned Quantum well active district 52 is tool
There are the AlGaN/AlGaN multi-quantum well active regions 52 of 5 periodic structures.Above-mentioned Quantum well active district 52 is i.e. according between default component
Every the AlGaN well layer and AlGaN potential barrier of arrangement, the concentration of aluminium atom needs to be higher than AlGaN traps wherein in AlGaN potential barrier
The concentration of aluminium atom in layer.In embodiments of the present invention, one layer of AlGaN well layer and one layer of AlGaN potential barrier constitute a week
Phase.Wherein preferred, in one cycle, the thickness of AlGaN well layer is about 10nm or so, and the thickness of AlGaN potential barrier is about
Thickness for 2.5nm or so, entire Quantum well active district 52 is about 62.5nm or so.
Above-mentioned first N-shaped epitaxial layer 51 is located at above-mentioned luminescence unit 5 towards the end of transition zone 3, i.e., outside described first N-shaped
Prolong layer 51 between Quantum well active district 52 and transition zone 3.First N-shaped epitaxial layer 51 is towards 52 side table of Quantum well active district
Face is in contact and is fixedly connected with Quantum well active district 52, and the first N-shaped epitaxial layer 51 is backwards to 52 1 side surface of Quantum well active district
It is fixedly connected with above-mentioned transition zone 3.Specifically, above-mentioned first N-shaped epitaxial layer 51 is specially the N-shaped AlGaN layer through overdoping, the
The thickness of one N-shaped epitaxial layer 51 is usually at 0.2 μm or so.The effect of first N-shaped epitaxial layer 51 is in the operating condition, to quantum
Trap active area 52 provides electronics, to realize the coupling in hole and electronics in Quantum well active district 52, to shine.Have
Closing the other parameters of the first N-shaped epitaxial layer 51 will be described in detail in following inventive embodiments, no longer be repeated herein.
Above-mentioned p-type epitaxial layer 53 is located at above-mentioned luminescence unit 5 towards the end of the second substrate 2, i.e. the p-type epitaxial layer 53
Between Quantum well active district 52 and the second substrate 2.P-type epitaxial layer 53 is towards 52 1 side surface of Quantum well active district and quantum
Trap active area 52 is fixedly connected, and p-type epitaxial layer 53, which is fixed backwards to 52 1 side surface of Quantum well active district with above-mentioned second substrate 2, to be connected
It connects.Specifically, the thickness of above-mentioned p-type epitaxial layer 53 is usually in 110nm or so.The effect of p-type epitaxial layer 53 is in working condition
Under, hole is provided to Quantum well active district 52, to realize the coupling in hole and electronics in Quantum well active district 52, thus into
Row shines.Other parameters and concrete structure in relation to p-type epitaxial layer 53 will be described in detail in following inventive embodiments,
This is no longer repeated.
Since in the operating condition, the displacement distance of electronics is longer and movement speed is very fast so that electric in the operating condition
Son easily propagates through Quantum well active district 52, to not coupled in Quantum well active district 52.So preferably, at this
In inventive embodiments, electronic barrier layer 54, the electronics are provided between above-mentioned Quantum well active district 52 and p-type epitaxial layer 53
Barrier layer 54 can hinder the movement of electronics, to avoid the electronics in working condition from passing through Quantum well active district 52, and it is mobile
To except mqw active layer.Specific ingredient etc. in relation to electronic barrier layer 54 is referred to the prior art, implements in the present invention
In example and it is not specifically limited.Specifically, in embodiments of the present invention, the thickness of the electronic barrier layer 54 is in 60nm or so.
It is provided with multiple luminescence units 5 in above-mentioned functional layer 4, the air gap 6 is provided between multiple luminescence units 5, it should
The air gap 6 needs to be interconnected with outside air environment.In the operating condition, when luminescence unit 5 launches light, the light
Between luminescence unit 5 and both interfaces of the air gap 6 scattering effect can occur for line, to increase going out for LED epitaxial chips
Light rate；Simultaneously because the presence of the air gap 6, heat can be passed out by what the air gap 6 was exceedingly fast caused by luminescence unit 5
LED epitaxial chips, to increase the heat dissipation effect of LED epitaxial chips.
Above-mentioned functional layer 4 needs to be fixedly connected with the second substrate 2 towards 2 one side surface of the second substrate.Specifically, functional layer
4 can be fixedly connected by bonded layer with the second substrate 2.The bonded layer mainly plays cementation, is mainly used for the second lining
Bottom 2 is with the mutually bonding of functional layer 4 to be fixedly connected.Concrete component in relation to bonded layer is referred to the prior art, in the present invention
It in embodiment and is not specifically limited, as long as cementation can be played.
In embodiments of the present invention, the LED epitaxial chips further include first be electrically connected with 5 one end of the luminescence unit
Electrode 7, the second electrode 8 being electrically connected with 5 other end of the luminescence unit.
The needs of above-mentioned first electrode 7 be electrically connecteds with one end of luminescence unit 5, the needs of specific first electrode 7 and above-mentioned the
One N-shaped epitaxial layer 51 or p-type epitaxial layer 53 are electrically connected；The needs of above-mentioned second electrode 8 are electrically connected with the other end of luminescence unit 5,
Specifically, when first electrode 7 is electrically connected with the first N-shaped epitaxial layer 51, the needs of second electrode 8 are electrically connected with p-type epitaxial layer 53,
When first electrode 7 is electrically connected with p-type epitaxial layer 53, second electrode 8 needs be electrically connected with the first N-shaped epitaxial layer 51, so as to
When working condition, first electrode 7 can drive electronics and p-type in the first N-shaped epitaxial layer 51 with second electrode 8 by voltage
Hole in epitaxial layer 53 is moved in Quantum well active district 52, to which the coupling of electron-hole pair occur, and then generates light
Line.According to the difference of above-mentioned first electrode 7 and 8 connection type of second electrode, forward LED epitaxial chip can be specifically divided into, fallen
Fill LED epitaxial chips and vertical LED epitaxial chip.Detailed content will be described in detail in following inventive embodiments, herein
No longer repeated.
A kind of LED epitaxial chips that the embodiment of the present invention is provided are mainly used for luminous function in the LED epitaxial chips
Layer 4 includes multiple round table-like or prism-frustum-shaped luminescence unit 5, and the air gap 6 is formed between multiple luminescence units 5.At this time
Luminescence unit 5 has inclined side wall.When luminescence unit 5 launches light, which can be in luminescence unit 5 and the air gap
Scattering effect occurs between 6 both interfaces, to increase the light emission rate of LED epitaxial chips；Simultaneously because the air gap 6 is deposited
What heat caused by luminescence unit 5 can be exceedingly fast by the air gap 6 passes out LED epitaxial chips, to increase outside LED
Prolong the heat dissipation effect of chip.
It, in the present invention can be further to functional layer 4 in order to further improve the luminous efficiency of LED epitaxial chips
Structure optimize, the concrete structure in relation to above-mentioned functional layer 4 will describe in detail in following inventive embodiments.
Referring to FIG. 2, a kind of structural schematic diagram for specific LED epitaxial chips that Fig. 2 is provided by the embodiment of the present invention.
It is different from foregoing invention embodiment, the embodiment of the present invention is on the basis of foregoing invention embodiment, further
The structure of functional layer 4 is specifically limited.Remaining content is described in detail in foregoing invention embodiment, herein not
It is repeated again.
Referring to Fig. 2, in embodiments of the present invention, the functional layer 4 further includes being located at the luminescence unit 5 and the transition
The second N-shaped epitaxial layer 41 between layer 3；Wherein, the second N-shaped epitaxial layer 41 is served as a contrast with the transition zone 3 towards described second
2 one side surface of bottom is in contact and is fixedly connected, and the first N-shaped epitaxial layer 51 and the second N-shaped epitaxial layer 41 are towards described
Second substrate, 2 one side surface is in contact and is fixedly connected；Electron concentration is more than the first n in the second N-shaped epitaxial layer 41
Electron concentration in type epitaxial layer 51.
Above-mentioned second N-shaped epitaxial layer 41 is between the first N-shaped epitaxial layer 51 and transition zone 3, specifically, the 2nd n
Type epitaxial layer 41 is in contact and fixes backwards to 4 one side surface of functional layer with the first N-shaped epitaxial layer 51 towards 4 one side surface of functional layer
Connection；The second N-shaped epitaxial layer 41 is fixedly connected backwards to 4 one side surface of functional layer with transition zone 3.
Electron concentration needs to be more than electron concentration in the first N-shaped epitaxial layer 51 in above-mentioned second N-shaped epitaxial layer 41.Specifically
, in embodiments of the present invention, the second N-shaped epitaxial layer 41 is specially the N-shaped AlGaN layer Jing Guo heavy doping, this is through overweight
In the N-shaped AlGaN layer of doping, carrier concentration is usually 3 × 1018cm-3Left and right.Corresponding above-mentioned first N-shaped epitaxial layer 51 has
Body is to pass through the AlGaN layer being lightly doped, and in the N-shaped AlGaN layer which is lightly doped, carrier concentration is usually 5 × 1017cm-3
Left and right.
Preferably, filming processing can be carried out to the first N-shaped epitaxial layer 51, by first in embodiments of the present invention
The thickness setting of N-shaped epitaxial layer 51 in 50nm between 100nm, including endpoint value.
In embodiments of the present invention, the second N-shaped epitaxial layer 41 of setting carrier concentration bigger and by the first N-shaped extension
The thickness of layer 51 is thinned, its object is to increase the equivalent series resistance on electronics moving direction, i.e., so that the present invention is implemented
In the LED epitaxial chips that example is provided, equivalent series resistance in the vertical direction becomes larger, so that electronics can be vertical
It on the direction of electronics movement, i.e., is extended in horizontal direction faster, evenly, to increase the luminous strong of LED epitaxial chips
Degree and Luminescence Uniformity.
The thickness of above-mentioned second N-shaped epitaxial layer 41 is usually at 2 μm or so.Certainly, the thickness of the second N-shaped epitaxial layer 41 may be used also
To be specially other values, the specific thickness in relation to the second N-shaped epitaxial layer 41 in embodiments of the present invention and is not specifically limited, depending on
Depending on concrete condition.
In embodiments of the present invention, the p-type epitaxial layer 53 includes being located at the Quantum well active district 52 towards described the
The p-type AlGaN layer 531 of two substrates, 2 one side surface；Positioned at the p-type AlGaN layer 531 towards second substrate, 2 side table
Face, and the p-type GaN layer 532 being fixedly connected with second substrate 2.
The hole of larger concentration can be usually adulterated in above-mentioned p-type GaN layer 532 so that have in p-type GaN layer 532 higher
Carrier concentration.But the energy gap of p-type GaN layer 532 is wider, needing to apply larger voltage could make hole move
It is dynamic.Therefore in embodiments of the present invention, can p-type AlGaN layer be set between Quantum well active district 52 in p-type GaN layer 532
531.The energy gap of p-type AlGaN layer 531 is relatively low, is provided with after p-type AlGaN layer 531 to be equivalent in forbidden band and increases one
Grade ladder, to effectively have adjusted the energy in hole in p-type epitaxial layer 53 so that hole can first drive in smaller voltage
Under from p-type GaN layer 532 be moved to p-type AlGaN layer 531, then be moved to from p-type AlGaN layer 531 under smaller voltage driving
Quantum well active district 52, required voltage when to reduce the movement of driving hole, to improve carrier in LED epitaxial chips
Mobile efficiency.
Aluminium component is usually 59% or so in above-mentioned p-type AlGaN layer 531, and the thickness of above-mentioned p-type AlGaN layer 531 is in this hair
Usually in 10nm or so in bright embodiment, and the thickness of p-type GaN layer 532 is usually in 100nm or so.Certainly, above-mentioned p-type AlGaN
Layer 531 and the thickness of p-type GaN layer 532 can also be specially other numerical value, related p-type AlGaN layer 531 and p-type GaN layer
532 specific thickness in embodiments of the present invention and is not specifically limited.
Preferably, in embodiments of the present invention, the functional layer 4 further includes being located at the luminescence unit 5 towards institute
State the specular layer 43 between 2 one end of the second substrate and second substrate 2.
Above-mentioned specular layer 43 be mainly used for by light caused by above-mentioned luminescence unit 5 it is as much as possible reflex to it is outer
Boundary, to improve the amount of light of LED epitaxial chips.Specifically, in embodiments of the present invention, the specular layer 43 mainly by
Metallic aluminium or aluminum titanium alloy are constituted.The specular layer 43 is usually a flood structure, is erected at above-mentioned luminescence unit
The surface of 52 one end of the second substrate of direction.Since luminescence unit 5 can to all the winds emit light, when light is to the second substrate 2
When transmitting, light can be launched into LED epitaxial chips by specular layer 43.In embodiments of the present invention, above-mentioned minute surface
The thickness in reflecting layer 43 is usually in 50nm or so.Certainly, the minute surface that other thickness can also be arranged in embodiments of the present invention is anti-
Layer 43 is penetrated, the specific thickness in relation to specular layer 43 in embodiments of the present invention and is not specifically limited.
In order to further decrease the interior contact resistance of LED epitaxial chips, preferably, in embodiments of the present invention may be used
With the luminescence unit 5 towards between described second substrate, 2 one end and the specular layer 43 be arranged metal conducting layer 42.
Above-mentioned metal conducting layer 42 is mainly used for reducing the interior contact resistance of LED epitaxial chips, while can make outer
The electric current of portion's power supply is transmitted to as early as possible in luminescence unit 5.Specifically, in embodiments of the present invention, the metal conducting layer 42 is led
It to be made of ITO (tin indium oxide).The metal conducting layer 42 is generally also a flood structure, is erected at 5 court of above-mentioned luminescence unit
To the surface of 2 one end of the second substrate.Under normal conditions, above-mentioned p-type epitaxial layer 53 is led towards 2 one side surface of the second substrate with metal
Electric layer 42 contacts with each other and is fixedly connected, and metal conducting layer 42 is towards 2 one side surface of the second substrate and 43 phase of specular layer
Mutually contacts and be fixedly connected.
In the above-mentioned metal conducting layer 42 of the tip growth of luminescence unit 5 towards the second substrate 2, different temperatures may be used
Multiple annealing process processing under gradient, to enhance the adhesion strength between metal conducting layer 42 and luminescence unit 5, while into one
Step reduces the interior contact resistance of LED epitaxial chips.
In embodiments of the present invention, the thickness of above-mentioned metal conducting layer 42 is usually in 50nm or so.Certainly, of the invention real
The metal conducting layer 42 of other thickness can also be arranged by applying in example, the specific thickness in relation to metal conducting layer 42 is implemented in the present invention
In example and it is not specifically limited.
A kind of LED epitaxial chips that the embodiment of the present invention is provided, set between the first N-shaped epitaxial layer 51 and transition zone 3
Being equipped with the second N-shaped epitaxial layer 41 of carrier concentration bigger can make electronics extended up perpendicular to the side that electronics moves
Faster, evenly, to increase the luminous intensity and Luminescence Uniformity of LED epitaxial chips；Set p-type epitaxial layer 53 to p
Type AlGaN layer 531 and p-type GaN layer 532 can effectively reduce voltage required when the movement of driving hole, to improve LED
The efficiency that carrier moves in epitaxial chip.
In order to further improve the quality of LED epitaxial chips, it is close to reduce dislocation of the functional layer 4 during epitaxial growth
Degree alleviates the stress between foreign substrate and epitaxial layer structure, in the present invention can further to the structure of transition zone 3 into
Row optimization, the concrete structure in relation to above-mentioned transition zone 3 will describe in detail in following inventive embodiments.
Referring to FIG. 3, the structural representation for the specific LED epitaxial chips of another kind that Fig. 3 is provided by the embodiment of the present invention
Figure.
It is different from foregoing invention embodiment, the embodiment of the present invention is on the basis of foregoing invention embodiment, further
The structure of transition zone 3 is specifically limited.Remaining content is described in detail in foregoing invention embodiment, herein not
It is repeated again.
Referring to Fig. 3, in embodiments of the present invention, the transition zone 3 includes being located at first substrate 1 towards described second
The buffer layer 31 of 2 one side surface of substrate；Positioned at the buffer layer 31 towards 2 one side surface of the second substrate, and with the work(
The superlattice layer 32 that ergosphere 4 is fixedly connected towards 1 one side surface of the first substrate.
Above-mentioned buffer layer 31 is located at the first substrate 1 towards 2 one side surface of the second substrate, is mainly used for reducing the first substrate 1
With the dislocation density between functional layer 4.Concrete structure in relation to buffer layer 31 will be described in detail in subsequent paragraph.
Above-mentioned superlattice layer 32 is between buffer layer 31 and functional layer 4, and wherein superlattice layer 32 is towards the first substrate 1 one
Side surface can be in contact and be fixedly connected with buffer layer 31, and superlattice layer 32 can be with functional layer 4 towards 4 one side surface of functional layer
It is in contact and is fixedly connected.When functional layer 4 is provided only with the first N-shaped epitaxial layer 51 towards 1 side of the first substrate, superlattice layer
32 can be in contact and be fixedly connected with the first N-shaped epitaxial layer 51；When functional layer 4 is provided with the second N-shaped towards 1 side of the first substrate
When epitaxial layer 41, superlattice layer 32 can be in contact and be fixedly connected with the second N-shaped epitaxial layer 41.
In embodiments of the present invention, the structure of above-mentioned superlattice layer 32 is usually in periodic arrangement, ingredient AlN/
The superlattice layer 32 of AlGaN.Specifically, in embodiments of the present invention, above-mentioned superlattice layer 32 is with 20 periodic structures
AlN/AlGaN superlattice layers 32.Above-mentioned superlattice layer 32 is i.e. according to default component spaced AlN and AlGaN.In this hair
In bright embodiment, one layer of AlN and one layer of AlGaN constitutes a cycle.It is wherein preferred, in one cycle, the thickness of AlN
About 20nm or so, and the thickness of AlGaN is about 20nm or so, the thickness of entire superlattice layer 32 is about 0.8 μm or so.
The lattice size of above-mentioned AlN and AlGaN is almost the same but can have small difference so that AlN and AlGaN it
Between lattice there is no dislocation but can have deformation so that lattice deformability.Since superlattice layer 32 has multiple periods, from
And superlattice layer 32 is allow to function similarly to spring effect, to reduce the stress between the first substrate 1 and functional layer 4, from
And improve the architecture quality of functional layer 4.Concrete structure and principle in relation to superlattice layer 32 are referred to the prior art, at this
It is not being repeated in inventive embodiments.
In embodiments of the present invention, the buffer layer 31 includes being located at first substrate 1 towards second substrate 2 one
First Al of side surface2O3Layer 311；Positioned at the first Al2O3AlON layer of the layer 311 towards 2 one side surface of the second substrate
312；Positioned at the AlON layers 312 towards the AlN layers 313 of 2 one side surface of the second substrate；Positioned at 313 direction of AlN layers
2nd Al of 2 one side surface of the second substrate2O3Layer 314；Wherein, the 2nd Al2O3Layer 314 and the superlattice layer 32
It is in contact and is fixedly connected；Wherein, the first Al2O3311 and the 2nd Al of layer2O3Layer 314 thickness no more than
10nm。
Above-mentioned first Al2O3Layer 311 is grown directly upon the first substrate 1 towards 2 one side surface of the second substrate, and described first
Al2O3The thickness of layer 311 is not more than 10nm.Above-mentioned first substrate 1 is usually Sapphire Substrate, and sapphire main component is just
For Al2O3.The first Al of one layer of Nano grade is grown towards 2 one side surface of the second substrate in the first substrate 12O3Layer 311 can have
Effect improves the crystalline quality of buffer layer 31.Specifically, the first Al of Nano grade2O3The lattice of layer 311 is easy to happen deformation, can
To solve the problems, such as lattice mismatch between the first substrate 1 and AlON layers 312 well, served as a contrast to reduce AlON layers 312 and first
Dislocation between bottom 1.Preferably, above-mentioned first Al2O3Layer 311 preferably 5nm or so.
Since the structure of above-mentioned superlattice layer 32 is AlN/AlGaN, and the first substrate 1 is usually Sapphire Substrate, in order to
The dislocation density between superlattice layer 32 and the first substrate 1 is reduced, needs to increasingly generate the crystalline substance being mutually matched with superlattice layer 32
Lattice structure, so in embodiments of the present invention, needing in the first Al2O3311 2 side Surface Creation AlON of the second substrate of direction of layer
Layer 312.Preferably, above-mentioned AlON layers 312 are preferably 5nm or so.
Further, it needs in embodiments of the present invention in 312 2 side Surface Creation AlN of the second substrate of direction of AlON layers
Layer 313, to the lattice structure being mutually matched towards 2 side Surface Creation of the second substrate and superlattice layer 32 in the first substrate 1.
Preferably, above-mentioned AlN layers 313 are preferably 5nm or so.
It further, in embodiments of the present invention, can be in 313 direction 2 side Surface Creation nanometer of the second substrate of AlN layers
Second Al of rank2O3Layer 314, the 2nd Al2O3The thickness of layer 314 is not more than 10nm.Due to the 2nd Al of Nano grade2O3
The lattice of layer 314 is easy to happen deformation, can further function as the effect of buffering, further to reduce buffer layer 31 and superlattices
Dislocation density between layer 32.Preferably, above-mentioned 2nd Al2O3Layer 314 preferably 5nm or so.
It in embodiments of the present invention, can be in the 2nd Al2O3Layer 314 grows above-mentioned superlattices towards 2 one side surface of the second substrate
Layer 32.
Transition zone 3 is set as above-mentioned with four-layer structure by a kind of LED epitaxial chips that the embodiment of the present invention is provided
Buffer layer 31 and superlattice layer 32 can effectively reduce dislocation density of the functional layer 4 during epitaxial growth, alleviate first
Stress between substrate 1 and functional layer 4.
It, in the present invention can be further by LED extension cores in order to further increase the radiating efficiency of LED epitaxial chips
Piece is set as the LED epitaxial chips of vertical structure, and the concrete structure in relation to above-mentioned LED epitaxial chips will be in following inventive embodiments
In describe in detail.
Referring to FIG. 4, the structural representation for another specific LED epitaxial chip that Fig. 4 is provided by the embodiment of the present invention
Figure.
It is different from foregoing invention embodiment, the embodiment of the present invention is on the basis of foregoing invention embodiment, further
The structure of LED epitaxial chips is specifically limited, specifically, being further to the first substrate 1, the second substrate 2, first electrode
7 and the structure of second electrode 8 specifically limited.Remaining content is described in detail in foregoing invention embodiment,
It is no longer repeated herein.
Referring to Fig. 4, in embodiments of the present invention, the first electrode 7 is located at first substrate 1 and is served as a contrast backwards to described second
2 one side surface of bottom, first substrate 1 are provided with interconnected through-hole with the transition zone 3, are provided with and lead in the through-hole
Electric bolt 9；Wherein, one end of the conductive plugs 9 is in contact with first electrode 7, the other end of the conductive plugs 9 and the functional layer
4 are in contact towards the surface of 1 side of the first substrate；The second electrode 8 is located at second substrate 2 backwards to described first
1 one side surface of substrate.
Above-mentioned first electrode 7 is equivalent to external electrode with second electrode 8 for entire LED epitaxial chips, described
External electrode needs to contact with each other with the either metal wiring layer of the metallic conduction in external substrate.In embodiments of the present invention,
It is first electrode 7 to be set to electrode of first substrate 1 backwards to 2 one side surface of the second substrate, and corresponding setting is carried on the back with the second substrate 2
It is second electrode 8 to the electrode of 1 one side surface of the first substrate.
It is usually provided with N-shaped ohmic contact layer 71 between above-mentioned first electrode 7 and the first substrate 1, to ensure first electrode 7
Good connection and good energy transmission can be formed between the first substrate 1.Tool in relation to N-shaped ohmic contact layer 71
Body structure is referred to the prior art, is not being repeated in embodiments of the present invention.
Correspondingly, p-type ohmic contact layer 81 is usually provided between above-mentioned second electrode 8 and the second substrate 2, to ensure
Good connection and good energy transmission can be formed between two electrodes 8 and the second substrate 2.Related p-type ohmic contact layer
81 concrete structure is referred to the prior art, is not being repeated in embodiments of the present invention.
In order to ensure that LED epitaxial chips have good heat dissipation performance, above-mentioned first electrode 7 and second electrode 8 preferred
It is the good Sillim's alloy of heat conductivility as first electrode 7 and second electrode 8.Preferably, can be further right
First electrode 7 is carried out backwards to 2 one side surface of the second substrate at roughening backwards to 1 one side surface of the first substrate and second electrode 8
Reason, so that first electrode 7 becomes backwards to 1 one side surface of the first substrate and second electrode 8 backwards to 2 one side surface of the second substrate
For rough surface, to further increase first electrode 7 and second electrode 8 and extraneous contact area, to further carry
The heat dissipation performance of high LED epitaxial chips.
Interconnected through-hole is provided in above-mentioned first substrate 1 and transition zone 3, the through-hole is typically from the first substrate
1 performs etching either hollow out backwards to 2 one side surface of the second substrate by techniques such as photoetching, dry etching wet etchings
Processing, obtained through-hole structure.Under normal conditions, it needs to serve as a contrast to second from the first substrate 1 backwards to 2 one side surface of the second substrate
The direction at bottom 2 performs etching, until exposing above-mentioned functional layer 4.In order to ensure only to the first substrate 1 and transition zone 3
Perform etching, without to functional layer 4 or be to try to it is few functional layer 4 is performed etching, need in embodiments of the present invention
The etching speed that stringent the first substrate of control pair 1 and transition zone 3 perform etching, to be avoided as possible for being mainly used for sending out
The functional layer 4 of light damages, to ensure LED epitaxial chip light output intensities.
Since there are the substances of insulation in above-mentioned transition zone 3 so that electric current can not be transmitted to by above-mentioned transition zone 3
State functional layer 4.In order to enable forming electrical connection between functional layer 4 and first electrode 7, then need in embodiments of the present invention
It is provided with interconnected through-hole in first substrate 1 and transition zone 3, and conductive plugs 9 are set in the through-hole.
In embodiments of the present invention, conductive plugs 9 are provided in above-mentioned through-hole, as its name suggests, conductive plugs 9 are usually metal
Structure, above-mentioned metal bolt are commonly known as interior contact electrode.One end of the conductive plugs 9 usually requires and 7 electricity of first electrode
Connection.Specifically, one end of conductive plugs 9 needs to be in contact with above-mentioned N-shaped ohmic contact layer 71, to be electrically connected with first electrode 7
It connects；The other end of the conductive plugs 9 usually requires to be in contact towards the surface of 1 side of the first substrate with functional layer 4, to
So that conductive plugs 9 are electrically connected with functional layer 4.
In embodiments of the present invention, functional layer 4 is mainly used for shining, while the heat of entire LED epitaxial chips is also main
It is generated by functional layer 4.In embodiments of the present invention, a part of heat caused by functional layer 4 can be transmitted to by conductive plugs 9
First electrode 7, to transfer heat to the external world by first electrode 7.Since the conductive plugs 9 of metal material usually have well
Heat conductivility, the thermal diffusivity of LED epitaxial chips can be further increased by being provided with above-mentioned conductive plugs 9 in embodiments of the present invention
Energy.The external world can be applied to the electric current of first electrode 7 and be transmitted to functional layer 4 as early as possible by above-mentioned conductive plugs 9 simultaneously, and then above-mentioned be led
Electric bolt 9 can reduce loss of the foreign current in LED epitaxial chips simultaneously.Above-mentioned first electrode 7 can pass through N-shaped Ohmic contact
Layer 71, conductive plugs 9 finally deliver current to functional layer 4.
Preferably, in embodiments of the present invention, insulation processing can be carried out to the side wall of above-mentioned through-hole, to logical
The side wall in hole forms an internal insulating layer 91.Under normal conditions, the internal insulating layer 91 needs to wrap up the side of above-mentioned conductive plugs 9
Wall.Above-mentioned internal insulating layer 91 can prevent the sidewall surfaces of metal bolt from forming current loop with the side wall of above-mentioned through-hole to make
At the situation of short circuit.Specific material and specific thickness in relation to above-mentioned internal insulating layer 91 are not done in embodiments of the present invention
It is specific to limit, it is determined on a case-by-case basis.
Above-mentioned second substrate 2 is provided with p-type ohmic contact layer 81 and second electrode 8 backwards to 1 one side surface of the first substrate,
In order to improve the speed that extraneous electric current is transmitted to functional layer 4, reduces the resistance inside LED epitaxial chips and increase electric current exists
Lateral transmission speed in LED epitaxial chips, in embodiments of the present invention, in the second substrate 2 towards 1 one side surface of the first substrate
It is provided with film conductive layer, the material of the film conductive layer is generally also metal, certainly, the specific material in relation to film conductive layer
Matter and specific thickness are not especially limited in embodiments of the present invention, are determined on a case-by-case basis.Above-mentioned film conductive layer is logical
It can be fixedly connected with functional layer 4 by above-mentioned bonded layer in the case of often.Above-mentioned second electrode 8 can by p-type ohmic contact layer 81,
Second substrate 2, film conductive layer, bonded layer finally deliver current to functional layer 4.
In embodiments of the present invention, external environment causes to corrode to LED epitaxial chips in order to prevent, and reduces outside LED
Prolong in chip influence of the leakage current to LED epitaxial chips at table top and mesa sidewall, preferably, can be to LED extensions
The surface that chip is in contact with external environment is passivated processing, the table to be in contact with external environment in LED epitaxial chips
Face forms an outer passivation layer.By said external passivation layer can effective above problem while, LED extension cores can be improved
The current spreading problem of Quantum well active district 52 in piece reduces electric current pile up effect, improves the light output rate of LED epitaxial chips.
Specific material and design parameter in relation to above-mentioned passivation layer in the embodiment of the present invention and are not specifically limited, as long as can play blunt
Change effect, is determined on a case-by-case basis.
A kind of LED epitaxial chips that the embodiment of the present invention is provided, can by above-mentioned conductive plugs 9 are arranged in LED epitaxial chips
To effectively shorten the heat-transfer path between this pyrotoxin of functional layer 4 and the external world, to improve the thermal diffusivity of LED epitaxial chips
Energy；The light output rate of LED epitaxial chips can further be improved by being provided with said external passivation layer simultaneously.
It is provided for the embodiments of the invention a kind of preparation method of LED epitaxial chips below to be introduced, is described below
Preparation method can correspond reference with above-described LED epitaxial chips.
Referring to FIG. 5, a kind of flow chart for LED epitaxial chips preparation method that Fig. 5 is provided by the embodiment of the present invention.
Referring to Fig. 5, in embodiments of the present invention, the preparation method of the LED epitaxial chips includes：
S101：Transition zone is prepared on one surface of the first substrate.
Above-mentioned first substrate is usually Sapphire Substrate.Before this step, it will usually first the first substrate is cleaned,
The pretreatments such as high-temperature baking, to remove the pollutant of the first substrate surface.
After the above preprocessing, before this step, the techniques such as mask, photoetching can be further used, first
One surface etch of substrate goes out nano graph, has the Sapphire Substrate of nano graph to which surface is made in the first substrate
(NPSS)。
If the first substrate is NPSS, in this step, prepared by the surface that nano graph can be etched in the first substrate
Cross layer.Specifically, in this step, Ecr plasma sputtering equipment may be used, at one of the first substrate
Prepare a buffer layer with four-layer structure in surface.
First, the first Al can be sequentially prepared on a surface of the first substrate2O3Layer, AlON layers, AlN layers and the 2nd Al2O3
Layer；Wherein, the first Al2O3Layer and the 2nd Al2O3The thickness of layer is no more than 10nm.Tool in relation to above-mentioned buffer layer
Body structure and each layer are played the role of being described in detail in foregoing invention embodiment, are no longer repeated herein.
It secondly, in this step can be in the 2nd Al2O3Layer surface epitaxial growth superlattice layer.Specifically, can use
MOCVD either LP MOVPEs, in above-mentioned buffer layer, specifically in the 2nd Al2O3Layer is backwards to the first one side of substrate surface extension
Grow the AlN/AlGaN superlattice layers of about 0.8 μ m-thick.Concrete structure and effect in relation to above-mentioned superlattice layer are in above-mentioned hair
It is described in detail in bright embodiment, is no longer repeated herein.
S102：In transition layer surface epitaxial growth functional layer.
In embodiments of the present invention, the functional layer includes multiple columnar luminescence units, multiple luminescence units it
Between be formed with the air gap.
In this step, the meeting columnar luminescence unit of epitaxial growth, the concrete structure in relation to above-mentioned functional layer is above-mentioned
It is described in detail in inventive embodiments, is no longer repeated herein.
In embodiments of the present invention, it will be done in following inventive embodiments in detail in relation to preparing the specific steps of above-mentioned functional layer
It is thin to introduce, it is no longer repeated herein.
S103：Luminescence unit is etched into round table-like and/or prism-frustum-shaped luminescence unit.
In this step, the column luminescence unit prepared in S102 can be etched into round table-like and/or prism-frustum-shaped shine
Unit.Specific steps in relation to etching luminescence unit will be described in detail in following inventive embodiments, no longer be gone to live in the household of one's in-laws on getting married herein
It states.
S104：Second substrate, one surface is mutually bonded with function layer surface.
In this step, one surface of the second substrate can be specifically mutually bonded with function layer surface using bonded layer, with
Functional layer is set to be fixedly connected with the second substrate.Concrete component in relation to bonded layer is referred to the prior art, implements in the present invention
In example and it is not specifically limited.
Preferably, can first be cleaned to the second substrate before this step, the pretreatments such as high-temperature baking, to go
Except the pollutant of the second substrate surface.Concrete structure in relation to the second substrate is described in detail in foregoing invention embodiment,
It is no longer repeated herein.
It is above-mentioned second substrate is pre-processed after, can be further in a surface extension life of the second substrate
Long thin film conductive layer, the film conductive layer can be fixedly connected by above-mentioned bonded layer with functional layer under normal conditions.It is above-mentioned
Film conductive layer can improve the speed that extraneous electric current is transmitted to functional layer, reduce resistance inside LED epitaxial chips and
Increase electric current transmission speed lateral in LED epitaxial chips.Concrete structure in relation to film conductive layer is in foregoing invention reality
It applies in example and is described in detail, no longer repeated herein.
S105：Luminescence unit one end is electrically connected with first electrode, and the luminescence unit other end is electrically connected with second electrode
It connects, LED epitaxial chips are made.
In this step, above-mentioned first electrode and second electrode need the luminescence unit being electrically connected in functional layer, with
Just in the operating condition, external voltage can in driving function layer electronics and hole be moved in Quantum well active district into
Row couples and launches light.
In order to improve the heat dissipation effect of LED epitaxial chips, in embodiments of the present invention, specifically, can be in the first substrate
Go out above-mentioned through-hole backwards to the second one side of substrate surface etch, then internal insulating layer, conductive plugs etc. are set in through-holes, then first
Substrate sets gradually N-shaped ohmic contact layer and first electrode backwards to the second one side of substrate surface, and in the second substrate backwards to the
One one side of substrate surface sets gradually p-type ohmic contact layer and second electrode, to set LED epitaxial chips to vertical junction
Structure.The concrete structure of LED epitaxial chips in relation to vertical structure is described in detail in foregoing invention embodiment, herein no longer
It is repeated.
After the completion of this step, that is, prepare the LED epitaxial chips that the embodiment of the present invention is provided.
The preparation method for a kind of LED epitaxial chips that the embodiment of the present invention is provided, outside the LED that the method is prepared
Prolong in chip, by above-mentioned buffer layer and superlattice layer with four-layer structure, can effectively reduce functional layer and be given birth in extension
Dislocation density in growth process alleviates the stress between the first substrate and functional layer；And it is above-mentioned by being arranged in LED epitaxial chips
The heat-transfer path that conductive plugs can effectively shorten between this pyrotoxin of functional layer and the external world, to improve LED epitaxial chips
Heat dissipation performance.
The related specific preparation process of above-mentioned functional layer will describe in detail in following inventive embodiments.
Referring to FIG. 6, a kind of stream for specific LED epitaxial chips preparation method that Fig. 6 is provided by the embodiment of the present invention
Cheng Tu.
Referring to Fig. 6, in embodiments of the present invention, the preparation method of the LED epitaxial chips includes：
S201：Transition zone is prepared on one surface of the first substrate.
This step and S101 in foregoing invention embodiment are essentially identical, and detailed content has been done in foregoing invention embodiment in detail
It is thin to introduce, it is no longer repeated herein.
S202：In transition layer surface epitaxial growth the second N-shaped epitaxial layer.
In embodiments of the present invention, carrier concentration is more than in the first N-shaped epitaxial layer in the second N-shaped epitaxial layer
Carrier concentration.
Specifically, in this step, MOCVD either LP MOVPEs may be used, it is arranged second on the surface of transition zone
N-shaped epitaxial layer.Concrete structure in relation to the second N-shaped epitaxial layer in foregoing invention embodiment to be described in detail, herein no longer
It is repeated.Carrier concentration is typically up to 3 × 10 in above-mentioned second N-shaped epitaxial layer18cm-3Left and right.
Above-mentioned first N-shaped epitaxial layer will be introduced in subsequent step, and structure is also in foregoing invention embodiment
It is described in detail.In this step, if being provided with above-mentioned second N-shaped epitaxial layer, carrier is dense in corresponding first N-shaped epitaxial layer
Degree is usually 5 × 1017cm-3Left and right.
Certainly, S202 can not also be executed in embodiments of the present invention, at this time in embodiments of the present invention for the first N-shaped
It carrier concentration and is not specifically limited, is determined on a case-by-case basis in epitaxial layer.Correspondingly, shielding layer is also no longer in S203
It is deposited on the second N-shaped epi-layer surface, the shielding layer is deposited on transition layer surface.
In this step, it when the second N-shaped epitaxial layer is the N-shaped AlGaN layer by heavy doping, prepares outside second N-shaped
The step of prolonging layer is typically when device temperature is when between 1050 DEG C to 1100 DEG C, in function layer surface epitaxial growth through overweight
The N-shaped AlGaN layer of doping.
S203：A shielding layer is deposited in the second N-shaped epi-layer surface.
In this step, the shielding layer has specific thickness, usually and following hairs in relation to the specific thickness of shielding layer
The height of light unit is identical.The material of above-mentioned shielding layer in embodiments of the present invention is usually SiO2(silica), exists certainly
Other materials can also be selected as shielding layer in the embodiment of the present invention, the specific material in relation to shielding layer is in the embodiment of the present invention
In and be not specifically limited.
S204：A single layer spherical particle is deposited in masking layer surface.
In this step, specifically, PECVD device can be used, a single layer spherical particle, institute are deposited on the surface of shielding layer
The surface that spherical particle is distributed generally uniformly in shielding layer is stated, is point contact between above-mentioned shielding layer and spherical particle.Specifically,
Above-mentioned spherical particle is usually polystyrene spherical particle in embodiments of the present invention, in embodiments of the present invention can also certainly
The spherical particle of other materials, the specific material in relation to spherical particle is selected in embodiments of the present invention and to be not specifically limited.
S205：Spherical particle is heated and etched, is preset so that spherical particle collapses and exposes the first of masking layer surface
Region.
In this step, the above-mentioned structure for being provided with spherical particle can be heated, and combines ICP lithographic techniques, made
Above-mentioned spherical particle gradually fusing caves in, becomes smaller so that become from point contact between shielding layer and spherical particle after caving in
Face contacts, to increase the bond effect between spherical particle and shielding layer；Simultaneously it is required that exposure between adjacent spherical particle
Go out the first predeterminable area of shielding layer.
S206：The first predeterminable area to covering layer surface carries out metal evaporation, to be preset in the first of masking layer surface
Region forms the first mask layer.
In this step, it needs to carry out metal evaporation to the masking layer surface in the obtained structures of above-mentioned S205, exist
First predeterminable area of the masking layer surface exposed between adjacent spherical particle forms the first mask layer, first mask layer
Usually metal mask layer.Specific material in relation to the first mask layer in embodiments of the present invention and is not specifically limited, depending on tool
Depending on body situation.
S207：Spherical particle after heating collapse is to remove spherical particle.
Due to that in above-mentioned steps, generally also the first mask layer of last layer can be deposited on spherical particle surface, in this step
Before, it usually needs ultrasonic toluene processing is carried out to the structure prepared by S206, thus by first mask on spherical particle surface
Layer removal, while needing the first mask layer for being retained in masking layer surface vapor deposition.
In this step, it needs again to heat structure prepared in S206, be set in masking layer surface with removal
The spherical particle set, the first mask layer that will be arranged in masking the first predeterminable area of layer surface are completely exposed.
It needs to be adjusted accordingly according to the difference of spherical particle material in relation to specific heating temperature, actual temp
It is referred to the prior art, in embodiments of the present invention and is not specifically limited.
S208：Shielding layer is etched to form column type array in shielding layer, is formed in multiple columns around column type array
Chamber.
In this step, it needs to perform etching shielding layer using etching technics, typically be carved in vertical direction
Erosion.It should be noted that in this step, there is no the region of above-mentioned first mask layer in masking layer surface, needing the region
The shielding layer exposed etches away completely, has the column type array of above-mentioned first mask layer, and above-mentioned column type to form top
Columnar inner cavity is formed with around array.
S209：Pass through the first shielding layer of erosion removal column type array top.
In this step, it will usually be handled using acid liquid corrosion, to remove the first shielding layer of above-mentioned column type array top.
S210：The first N-shaped of epitaxial growth epitaxial layer, Quantum well active district and p-type epitaxial layer successively in the lumen, to be formed
Luminescence unit.
In this step, MOCVD device can be specifically used, it is outer successively in the cylindrical interior volume around above-mentioned column type array
The first N-shaped of epitaxial growth epitaxial layer, Quantum well active district and p-type epitaxial layer, to form luminescence unit.Specifically, when in the present invention
S202 is executed in embodiment, then above-mentioned first N-shaped epitaxial layer can be in contact and be fixedly connected with the second N-shaped epitaxial layer；When at this
S202 is not executed in inventive embodiments, then above-mentioned first N-shaped epitaxial layer can be in contact and be fixedly connected with transition zone.
Specifically, above-mentioned p-type epitaxial layer is usually to have certain thickness p-type AlGaN layer and p-type GaN layer.Wherein exist
It can be first in Quantum well active district surface epitaxial growth p-type AlGaN layer, then in p-type AlGaN layer surface epitaxial growth p in this step
Type GaN layer.Concrete structure in relation to luminescence unit in this step is described in detail in foregoing invention embodiment, herein no longer
It is repeated.In this step, columnar luminescence unit can be formed.The height of above-mentioned luminescence unit usually with the thickness of shielding layer
It is consistent.
S211：After forming luminescence unit, shielding layer is removed by BOE solution.
In this step, after forming above-mentioned luminescence unit, BOE (Buffered Oxide Etch, buffering can be passed through
Oxide etching liquid) solution is ultrasonically treated, to above-mentioned shielding layer be eroded, with the whole shielding layer of removal.
Before this step, after forming above-mentioned luminescence unit, preferably, can be further in shielding layer table
Face is sequentially depositing metal conducting layer and specular layer.It certainly, in this step can also be only in masking layer surface deposition
Metal conducting layer or specular layer can not also deposit above-mentioned metal conducting layer and specular layer, depending on concrete condition
Depending on, it is not specifically limited in embodiments of the present invention.It should be noted that it is above-mentioned after forming luminescence unit, it is covering
The film layer of layer surface deposition needs the end with luminescence unit, specially p-type epitaxial layer to be in contact and be fixedly connected.
S212：Luminescence unit is etched into round table-like and/or prism-frustum-shaped luminescence unit.
In this step, the column luminescence unit prepared in S211 can be etched into round table-like and/or prism-frustum-shaped shine
Unit.Specific steps in relation to etching luminescence unit will be described in detail in following inventive embodiments, no longer be gone to live in the household of one's in-laws on getting married herein
It states.
Certainly, in embodiments of the present invention, following S213 can also be first carried out, or first carry out S213 and S214 it
Afterwards, then S212 is executed.
S213：Second substrate, one surface and the function layer surface are mutually bonded.
S214：Luminescence unit one end is electrically connected with first electrode, and the luminescence unit other end is electrically connected with second electrode
It connects, the LED epitaxial chips are made.
Above-mentioned S213 and S214 is essentially identical with S104 and S105 in foregoing invention embodiment respectively, and detailed content exists
It is described in detail in foregoing invention embodiment, is no longer repeated herein.
The preparation method for a kind of LED epitaxial chips that the embodiment of the present invention is provided, outside the LED that the method is prepared
Prolong in chip, it includes multiple into round table-like and/or prism-frustum-shaped luminescence unit to be mainly used for luminous functional layer, is shone multiple
The air gap is formed between unit.When luminescence unit launches light, the light can luminescence unit and the air gap this
Scattering effect occurs between two kinds of interfaces, to increase the light emission rate of LED epitaxial chips；Simultaneously because the presence of the air gap,
What heat caused by luminescence unit can be exceedingly fast by the air gap passes out LED epitaxial chips, to increase LED epitaxial chips
Heat dissipation effect.
The related specific etch step of above-mentioned functional layer will describe in detail in following inventive embodiments.
Referring to FIG. 7, the specific LED epitaxial chip preparation methods of another kind that Fig. 7 is provided by the embodiment of the present invention
Flow chart.
Referring to Fig. 7, in embodiments of the present invention, the preparation method of the LED epitaxial chips includes：
S301：Transition zone is prepared on one surface of the first substrate.
S302：In transition layer surface epitaxial growth functional layer.
In embodiments of the present invention, the functional layer includes multiple columnar luminescence units, multiple luminescence units it
Between be formed with the air gap.
Above-mentioned S301 and S302 is essentially identical with S101 and S102 in foregoing invention embodiment respectively, and detailed content exists
It is described in detail in foregoing invention embodiment, is no longer repeated herein.
S303：On luminescence unit surface, the second mask layer is set.
In this step, it needs that the second mask layer is arranged on columnar luminescence unit surface.Due in the embodiment of the present invention
In, it will usually columnar luminescence unit is etched into shining for round table-like luminescence unit either prism-frustum-shaped using photoetch method
Unit, above-mentioned second mask layer are usually photoresist in embodiments of the present invention.Specifically, in this step, can send out
Light unit surface is coated with one layer of above-mentioned second mask layer.
S304：By the second predeterminable area in the second mask layer of photolithography plate photoengraving with predetermined pattern, with exposure the
The corresponding luminescence unit of two predeterminable areas.
In this step, photoengraving can be carried out by the second mask layer of photolithography plate pair.It is engraved specifically, above-mentioned photolithography plate has
Hollow structure, the engraved structure form preset pattern in photoetching plate surface so that extraneous light can be from above-mentioned engraved structure
It is middle to penetrate photolithography plate.Specifically, yellow light would generally be used to penetrate above-mentioned photolithography plate at this stage, to be exposed to the second mask layer
Light, to etch away the second predeterminable area in the second mask layer, to the corresponding luminescence unit of the second predeterminable area of exposure.
It should be noted that the predetermined pattern that above-mentioned photolithography plate has needs the second predeterminable area in the second mask layer to correspond.
S305：The corresponding luminescence unit of the second predeterminable area of corrosion corrodes luminescence unit at round table-like and/or rib
The luminescence unit of mesa-shaped.
In this step, it needs to corrode columnar luminescence unit using etching technics, in relation to the work specifically corroded
The specific ingredient of corrosive liquid in embodiments of the present invention and is not specifically limited, as long as can corrode columnar luminescence unit
At the luminescence unit of round table-like luminescence unit either prism-frustum-shaped.
It should be noted that in this step, the corresponding part luminescence unit of above-mentioned second predeterminable area can be eroded,
And the part luminescence unit that surface is covered with the second mask layer will not be corroded, so as to form round table-like luminescence unit or
It is the luminescence unit of prism-frustum-shaped.
After this step, it usually needs remaining second mask layer is got rid of, the second mask layer of related specific removal
Technique is referred to the prior art, is no longer repeated herein.
S306：Second substrate, one surface and the function layer surface are mutually bonded.
S307：Luminescence unit one end is electrically connected with first electrode, and the luminescence unit other end is electrically connected with second electrode
It connects, the LED epitaxial chips are made.
Above-mentioned S306 and S307 is essentially identical with S104, S105 and S213, S214 in foregoing invention embodiment respectively,
Detailed content is described in detail in foregoing invention embodiment, is no longer repeated herein.
The preparation method for a kind of LED epitaxial chips that the embodiment of the present invention is provided, outside the LED that the method is prepared
Prolong in chip, it includes multiple round table-like or prism-frustum-shaped luminescence unit to be mainly used for luminous functional layer, in multiple luminescence units
Between be formed with the air gap.Luminescence unit has inclined side wall at this time.When luminescence unit launches light, the light meeting
Scattering effect occurs between luminescence unit and both interfaces of the air gap, to increase the light emission rate of LED epitaxial chips；Together
When due to the air gap there are what heat caused by luminescence unit can be exceedingly fast by the air gap to pass out LED extension cores
Piece, to increase the heat dissipation effect of LED epitaxial chips.
Each embodiment is described by the way of progressive in this specification, the highlights of each of the examples are with it is other
The difference of embodiment, just to refer each other for same or similar part between each embodiment.For being filled disclosed in embodiment
For setting, since it is corresponded to the methods disclosed in the examples, so description is fairly simple, related place is referring to method part
Explanation.
Professional further appreciates that, unit described in conjunction with the examples disclosed in the embodiments of the present disclosure
And algorithm steps, can be realized with electronic hardware, computer software, or a combination of the two, in order to clearly demonstrate hardware and
The interchangeability of software generally describes each exemplary composition and step according to function in the above description.These
Function is implemented in hardware or software actually, depends on the specific application and design constraint of technical solution.Profession
Technical staff can use different methods to achieve the described function each specific application, but this realization is not answered
Think beyond the scope of this invention.
The step of method described in conjunction with the examples disclosed in this document or algorithm, can directly be held with hardware, processor
The combination of capable software module or the two is implemented.Software module can be placed in random access memory (RAM), memory, read-only deposit
Reservoir (ROM), electrically programmable ROM, electrically erasable ROM, register, hard disk, moveable magnetic disc, CD-ROM or technology
In any other form of storage medium well known in field.
Finally, it is to be noted that, herein, relational terms such as first and second and the like be used merely to by
One entity or operation are distinguished with another entity or operation, without necessarily requiring or implying these entities or operation
Between there are any actual relationship or orders.Moreover, the terms "include", "comprise" or its any other variant meaning
Covering non-exclusive inclusion, so that the process, method, article or equipment including a series of elements includes not only that
A little elements, but also include other elements that are not explicitly listed, or further include for this process, method, article or
The intrinsic element of equipment.In the absence of more restrictions, the element limited by sentence "including a ...", is not arranged
Except there is also other identical elements in the process, method, article or apparatus that includes the element.
A kind of LED epitaxial chips provided by the present invention and a kind of preparation method of LED epitaxial chips are carried out above
It is discussed in detail.Principle and implementation of the present invention are described for specific case used herein, above example
Illustrate the method and its core concept for being merely used to help understand the present invention.It should be pointed out that for the common skill of the art
, without departing from the principle of the present invention, can be with several improvements and modifications are made to the present invention for art personnel, these change
It is also fallen within the protection scope of the claims of the present invention into modification.
Claims (10)
1. a kind of LED epitaxial chips, which is characterized in that the LED epitaxial chips include：
First substrate；
Positioned at the transition zone of first substrate first surface；
Deviate from the functional layer on first one side of substrate surface positioned at the transition zone；Wherein, the functional layer includes multiple circles
The luminescence unit of mesa-shaped and/or prism-frustum-shaped is formed with the air gap between multiple luminescence units；
The second substrate being fixedly connected backwards to first one side of substrate surface with the functional layer；
The first electrode being electrically connected with described luminescence unit one end, the second electrode being electrically connected with the luminescence unit other end.
2. LED epitaxial chips as described in claim 1, which is characterized in that first substrate is Sapphire Substrate, described the
Two substrates are p-type silicon substrate；
The luminescence unit includes：
Round table-like and/or prism-frustum-shaped Quantum well active district；
Positioned at the Quantum well active district towards first one side of substrate surface, and first be fixedly connected with the transition zone
N-shaped epitaxial layer；
Positioned at the Quantum well active district towards second one side of substrate surface, and the p being fixedly connected with second substrate
Type epitaxial layer.
3. LED epitaxial chips according to claim 2, which is characterized in that the functional layer further includes：
The second N-shaped epitaxial layer between the luminescence unit and the transition zone；Wherein, the second N-shaped epitaxial layer with
The transition zone is in contact and is fixedly connected towards second one side of substrate surface, the first N-shaped epitaxial layer and described the
Two N-shaped epitaxial layers are in contact and are fixedly connected towards second one side of substrate surface；Electronics is dense in the second N-shaped epitaxial layer
Degree is more than electron concentration in the first N-shaped epitaxial layer.
4. LED epitaxial chips according to claim 3, which is characterized in that the p-type epitaxial layer includes：
Positioned at the Quantum well active district towards the p-type AlGaN layer on second one side of substrate surface；
Positioned at the p-type AlGaN layer towards second one side of substrate surface, and the p-type being fixedly connected with second substrate
GaN layer.
5. according to the LED epitaxial chips described in any one of claim 2 to 4 claim, which is characterized in that the transition zone packet
It includes：
Positioned at first substrate towards the buffer layer on second one side of substrate surface；
Positioned at the buffer layer towards second one side of substrate surface, and with the functional layer towards first one side of substrate
The superlattice layer that surface is fixedly connected；
The buffer layer includes：
Positioned at first substrate towards the first Al on second one side of substrate surface2O3Layer；
Positioned at the first Al2O3AlON layer of the layer towards second one side of substrate surface；
Positioned at the described AlON layers AlN layer towards second one side of substrate surface；
Positioned at described AlN layers the 2nd Al towards second one side of substrate surface2O3Layer；Wherein, the 2nd Al2O3Layer and institute
Superlattice layer is stated to be in contact and be fixedly connected；Wherein, the first Al2O3Layer and the 2nd Al2O3Layer thickness no more than
10nm。
6. LED epitaxial chips according to claim 1, which is characterized in that the first electrode is located at first substrate
The second surface opposite with the first surface, first substrate are provided with interconnected through-hole, institute with the transition zone
It states and is provided with conductive plugs in through-hole；Wherein, one end of the conductive plugs is in contact with first electrode, the other end of the conductive plugs
It is in contact with the surface of the functional layer towards first one side of substrate；
The second electrode is located at second substrate backwards to first one side of substrate surface.
7. a kind of preparation method of LED epitaxial chips, which is characterized in that the method includes：
In one surface epitaxial growth transition zone of the first substrate；
In the transition zone off-balancesheet epitaxial growth functional layer；Wherein, the functional layer includes multiple columnar luminescence units, Duo Gesuo
It states and is formed with the air gap between luminescence unit；
The luminescence unit is etched into round table-like and/or prism-frustum-shaped luminescence unit；
Second substrate, one surface and the function layer surface are mutually bonded；
Described luminescence unit one end is electrically connected with first electrode, and the luminescence unit other end is electrically connected with second electrode
It connects, the LED epitaxial chips are made.
8. the method according to the description of claim 7 is characterized in that described in the transition zone off-balancesheet epitaxial growth functional layer packet
It includes：
A shielding layer is deposited in the transition layer surface；
A single layer spherical particle is deposited in the masking layer surface；
The spherical particle is heated and etches, so that the spherical particle collapses and exposes the first pre- of the masking layer surface
If region；
Metal evaporation is carried out to the first predeterminable area of the masking layer surface, in the first preset areas of the masking layer surface
Field surface forms the first mask layer；
The spherical particle after heating collapse is to remove the spherical particle；
The shielding layer is etched to form column type array in the shielding layer, multiple columns are formed with around the column type array
Inner cavity；
Pass through first mask layer of column type array top described in erosion removal；
The first N-shaped of epitaxial growth epitaxial layer, Quantum well active district and p-type epitaxial layer successively in the inner cavity, described in formation
Luminescence unit；
After forming the luminescence unit, the shielding layer is removed by BOE solution.
9. the method according to the description of claim 7 is characterized in that described in one surface epitaxial growth transition zone packet of the first substrate
It includes：
It is sequentially prepared the first Al on one surface of the Sapphire Substrate2O3Layer, AlON layers, AlN layers and the 2nd Al2O3Layer；Wherein, institute
State the first Al2O3Layer and the 2nd Al2O3The thickness of layer is no more than 10nm；
In the 2nd Al2O3Layer surface epitaxial growth superlattice layer；
It is described to include in the transition layer surface epitaxial growth functional layer：
The functional layer described in the epitaxial growth of the superlattice layer surface.
10. the method according to the description of claim 7 is characterized in that it is described by the luminescence unit be etched into it is round table-like and/or
The luminescence unit of prism-frustum-shaped includes：
On the luminescence unit surface, the second mask layer is set；
By the second predeterminable area in the second mask layer described in the photolithography plate photoengraving with predetermined pattern, with exposure described second
The corresponding luminescence unit of predeterminable area；
The corrosion corresponding luminescence unit of the second predeterminable area, corrodes the luminescence unit at round table-like and/or rib
The luminescence unit of mesa-shaped.
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